CN114975161A - Micro-nano machining system - Google Patents
Micro-nano machining system Download PDFInfo
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- CN114975161A CN114975161A CN202110208646.9A CN202110208646A CN114975161A CN 114975161 A CN114975161 A CN 114975161A CN 202110208646 A CN202110208646 A CN 202110208646A CN 114975161 A CN114975161 A CN 114975161A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C99/00—Subject matter not provided for in other groups of this subclass
- B81C99/0005—Apparatus specially adapted for the manufacture or treatment of microstructural devices or systems, or methods for manufacturing the same
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
- H01L21/67173—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers in-line arrangement
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67184—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the presence of more than one transfer chamber
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67196—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the transfer chamber
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
- H01L21/67213—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one ion or electron beam chamber
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Abstract
The invention provides a micro-nano processing system, which comprises: the device comprises a chemical reagent sealing unit, an ultraviolet exposure sealing unit, an etching unit and a gas purification unit; the chemical reagent sealing unit, the ultraviolet exposure sealing unit and the etching unit are communicated through a sample transfer channel; the gas purification unit is in gas-tight communication with the chemical reagent sealing unit, the ultraviolet exposure sealing unit and the etching unit through a gas circulation channel, so that the micro-nano processing system forms a gas circulation loop; the etching unit comprises an ion beam etching preparation unit and an ion beam etching unit which are hermetically communicated through a vacuum gate valve; the micro-nano processing system also comprises a sample inlet and outlet pipeline for the sample to enter and leave the micro-nano processing system. The micro-nano processing system has the characteristics of cost saving, easiness in maintenance and simplicity in operation, and is particularly suitable for micro-nano processing of materials sensitive to oxygen and water vapor.
Description
Technical Field
The invention relates to the field of micro-nano processing. Specifically, the invention relates to a micro-nano processing system.
Background
After the reduction of dimensions and dimensions, low dimensional materials often exhibit novel physical and chemical phenomena different from bulk materials due to size and dimensional effects, surface and interface effects, etc., and therefore, research and application related thereto have great scientific and technical significance. The micro-nano processing technology is a technical basis for controllably realizing an artificial microstructure which is designed in advance and meets the requirements of dimension and dimension in materials, and is a basis of micro-nano scientific technology in the fields of microelectronics, micro-nano electromechanical systems and the like.
The micro-nano processing of the material generally relates to the operation steps of preparation of a sample to be processed, glue homogenizing, pre-baking, exposure, post-baking, etching, glue removing and the like. Exposure means that a pre-designed pattern is made on the cured photoresist on the surface of a sample by using a mask, and mainly comprises ultraviolet exposure and electron beam exposure. Etching is the "transfer" of this pattern formed on the photoresist to the sample. Etching can be divided into etching liquid etching and ion beam etching, namely, wet etching and dry etching. Currently, these steps are usually performed in an ultra clean room. The parameters of the environment in the ultra-clean room, such as the content of the dust particles, the temperature, the humidity, the air pressure, the illumination and the like, need to be controlled strictly according to the standard so as to ensure that the artificial structure of the micro-nano scale required by people can be realized. Therefore, when a micro-nano processing is performed on a sample, the cost for manufacturing, maintaining, operating and the like of a micro-nano processing system is very large.
In recent years, with the continuous emergence of new functional materials, it is found that in an air environment, the materials are easy to react with oxygen and water vapor to deteriorate and degrade. For example, the iron-based superconductor material LiFeP (europhys. lett.87,37004(2009)), SrTiO 3 A single-layer FeSe thin film material (Chin. Phys. Lett.29,037402(2012)) and a chromium-based superconductor material K which are grown on a substrate 2 Cr 3 As 3 (Sci. China mater.58,16(2015)), zinc-arsenic-based diluted magnetic semiconductor material Li (Zn, Mn) As (nat. Commun.2,422(2011)), topological insulator material Bi 2 Se 3 (Nature Phys.6,584(2010)) and KHgSb (Sci. adv.3, e1602415(2017)), and the Quantum anomalous Hall Effect material Cr 0.15 (Bi 0.1 Sb 0.9 ) 1.85 Te 3 (Science 340,167(2013)), etc. The new materials have very important scientific significance for physical research and technical application, and the acquisition of the microstructures of the materials is an indispensable important link for the development of physical research and technical application of the materials. Therefore, how to carry out the micro-nano processing of the quantum functional materials sensitive to oxygen and water vapor provides new challenges for micro-nano processing technologies and micro-nano processing systems.
At present, for the micro-nano processing of the oxygen and water sensitive materials, mechanical engraving (Science 340,167(2013)) and micro-nano processing (Science. rep.4,05817(2014)) after covering a protective layer on the surface have been tried. However, compared with micro-nano machining, the structure precision obtained by mechanical engraving is low, and the controllability and repeatability of operation are poor. The surface protection layer covering method inevitably changes the original state of the sample, and is not beneficial to further characterization and test of other physical and chemical properties of the sample.
At present, a micro-nano processing system which is low in cost, easy to maintain and simple to operate and is suitable for materials sensitive to oxygen and water vapor is urgently needed.
Disclosure of Invention
The invention aims to provide a micro-nano processing system which is low in cost, easy to maintain and simple to operate and is particularly suitable for micro-nano processing of materials sensitive to oxygen and water vapor.
The above object of the present invention is achieved by the following means.
The invention provides a micro-nano processing system, which comprises:
the device comprises a chemical reagent sealing unit, an ultraviolet exposure sealing unit, an etching unit and a gas purification unit; wherein the content of the first and second substances,
the chemical reagent sealing unit, the ultraviolet exposure sealing unit and the etching unit are communicated through a sample transfer channel; the gas purification unit is in gas-tight communication with the chemical reagent sealing unit, the ultraviolet exposure sealing unit and the etching unit through a gas circulation channel, so that the micro-nano processing system forms a gas circulation loop; the etching unit comprises an ion beam etching preparation unit and an ion beam etching unit which are hermetically communicated through a vacuum gate valve;
the micro-nano processing system also comprises a sample inlet and outlet pipeline for the sample to enter and leave the micro-nano processing system.
Preferably, in the micro-nano processing system of the present invention, the sample inlet/outlet pipe is disposed on at least one of the chemical reagent sealing unit, the ultraviolet exposure sealing unit, and the etching unit. When the sample inlet and outlet pipeline is arranged on the etching unit, the sample inlet and outlet pipeline is arranged on an ion beam etching preparation unit of the etching unit. On one hand, the ion beam etching preparation unit is connected with other functional units of the micro-nano processing system to form a loop of gas circulation. On the other hand, the ion beam etching preparation unit provides a buffered and stable environment atmosphere for the ion beam etching unit, so that an operator can put in a sample to be etched, can take out the etched sample, and can clean a sample table, an observation window and the like serving the ion beam etching unit.
Preferably, in the micro-nano processing system, sealing valves are arranged on two sides of the sample inlet and outlet pipeline.
Preferably, in the micro-nano processing system of the present invention, a sample carrier is disposed in the sample transfer channel, so that the sample can move freely in the sample transfer channel.
Preferably, in the micro-nano processing system of the present invention, two ends of the sample transfer channel are provided with a sealing valve.
Preferably, in the micro-nano processing system of the invention, the gas circulation channel is provided with an oxygen content probe, a water vapor content probe and a gas pressure probe, and the oxygen content probe, the water vapor content probe and the gas pressure probe are respectively connected with a gas source and a mechanical pump through electromagnetic valves.
Preferably, in the micro-nano processing system of the present invention, the chemical reagent sealing unit includes a chemical reagent sealing box, and a hot plate, a spin coater, a developing solution, a degumming solution, a photoresist, and a refrigerator disposed therein.
Preferably, in the micro-nano processing system of the present invention, the photoresist is disposed in the refrigerator.
Preferably, in the micro-nano processing system, a first closed box observation window and a first rubber glove interface are arranged on the chemical reagent closed box.
Preferably, in the micro-nano processing system of the present invention, the ultraviolet exposure closed unit includes an ultraviolet exposure closed box and an ultraviolet exposure machine disposed therein.
Preferably, in the micro-nano processing system, the ultraviolet exposure closed box body is provided with a second closed box body observation window and a second rubber glove interface.
Preferably, in the micro-nano processing system of the invention, the ultraviolet exposure machine comprises a mercury lamp light source, an alignment operating platform and a display.
Preferably, in the micro-nano processing system of the present invention, the ion beam etching preparation unit includes an ion beam etching preparation closed box; and a third airtight box observation window and a third rubber glove interface are arranged on the airtight box body for ion beam etching preparation.
Preferably, in the micro-nano processing system of the present invention, the ion beam etching unit includes an ion beam etching vacuum chamber and a koffman ion source; a sample stage and a cooling device are arranged in the ion beam etching vacuum chamber.
In a specific embodiment of the invention, the ion beam etching unit further comprises a vacuum pump matched with the ion beam etching unit so as to vacuumize the ion beam etching vacuum chamber; preferably, the vacuum pump may be a two-stage pump set composed of a molecular pump and a mechanical pump. The gas inlet of the molecular pump is connected with the ion beam etching vacuum chamber through a vacuum gate valve, the gas outlet of the molecular pump is connected with the gas inlet of the mechanical pump, and the gas outlet of the mechanical pump is connected with a tail gas recovery pipeline.
Preferably, in the micro-nano processing system of the present invention, the ion beam etching vacuum chamber is provided with an ion beam etching unit observation window. Preferably, in the micro-nano processing system of the present invention, the gas purification unit includes a gas purification box, and a fan, an organic gas purification column and an oxygen water purification column disposed therein.
In a specific embodiment of the present invention, the chemical reagent sealing unit, the ultraviolet exposure sealing unit, the ion beam etching preparation unit and the gas purification unit are connected through the sample transfer passage or the gas circulation passage, and the interior of the sample transfer passage or the gas circulation passage is filled with a protective atmosphere gas of one atmosphere pressure, and a closed loop of the gas environment is formed.
In the embodiment of the invention, the sample transfer channel can meet the gas tightness and can realize the transfer of samples among the chemical reagent sealing unit, the ultraviolet exposure sealing unit and the ion beam etching preparation unit under the environment of one atmospheric pressure.
In an embodiment of the present invention, a sample carrier may be disposed in the sample transfer channel for transferring a sample. Specifically, the fixed pulleys can be placed at two ends of the sample transfer channel to move the sample carrier, so that the sample can be transferred.
In a specific embodiment of the invention, the gas pressure in the micro-nano processing system is regulated and controlled by a gas purification unit. A gas pressure probe can be arranged on the gas circulation channel to detect the pressure in the micro-nano processing system. The mechanical pump and the gas source can be respectively connected with the gas circulation channel through electromagnetic valves. In order to keep the balance between the air pressure in the air circulation channel and the air pressure of the ambient environment of the system, in a set error range, when the value detected by the air pressure probe is smaller than the air pressure value of the ambient environment of the system, the first electromagnetic valve is opened, and the air source replenishes air into the air circulation channel; and when the value detected by the gas pressure probe is larger than the gas pressure value of the surrounding environment of the system, the second electromagnetic valve is opened, and the mechanical pump pumps gas from the gas circulation channel.
In a particular embodiment of the invention, the protective atmosphere gas is typically nitrogen, argon. In the micro-nano processing system, the total air pressure in the system is controlled to be about 1 standard atmospheric pressure, and meanwhile, the content of residual oxygen and water vapor in the gas in the system is controlled to be maintained at a lower level. In generalThe relative content of residual oxygen and water vapor is less than 1 × 10 -7 I.e., 0.1 ppm.
In the specific embodiment of the invention, one end of the sample inlet and outlet pipeline can be connected with a chemical reagent closed box body, an ultraviolet exposure closed box body or an ion beam etching preparation closed box body. The other end of the sample inlet and outlet pipeline can be connected with other closed box bodies in protective atmosphere environments and can also be connected with air environments according to actual working requirements.
In a particular embodiment of the invention, the gas environment of the sample inlet and outlet conduit may be switched between a vacuum environment and a one atmosphere protective atmosphere environment as the operating requirements dictate.
In a specific embodiment of the present invention, the gas environment of the ion beam etching vacuum chamber can be switched between a vacuum environment and a one atmosphere protective atmosphere environment as the operating requirements dictate.
In the specific embodiment of the invention, the chemical reagents such as photoresist, developing solution, photoresist remover and the like are all organic liquid without water.
In the specific embodiment of the invention, the organic gas purification column is filled with materials such as activated carbon and the like which adsorb organic molecules, and the oxygen water purification column is filled with materials such as copper catalysts, molecular sieves and the like which adsorb oxygen and adsorb water vapor.
In the specific embodiment of the invention, the material of the observation window of the closed box body can be glass, organic glass, quartz and the like.
The invention has the following beneficial effects:
the micro-nano processing system can complete micro-nano processing of the sample in a protective atmosphere environment, so that a micro-nano structure of a material sensitive to oxygen and water vapor is obtained.
The micro-nano processing system can cover a layer of photoresist film with a manually set pattern on the surface of a material sample sensitive to oxygen and water vapor under a protective atmosphere environment, so that other tests such as an electric transport test, a magnetic test, an optical test, a thermal test, an acoustic test and the like can be carried out on the premise of not deteriorating.
The micro-nano processing system of the invention places the operations, materials and the like of micro-nano processing in an oxygen-free and water-free protective atmosphere environment. Compared with the technical scheme of completely replacing the atmosphere environment of the ultra-clean room with the oxygen-free and water-free protective atmosphere environment, the scheme has lower system cost and test operation cost.
The micro-nano processing system has expandability, and operations such as sample manufacturing, crystal structure characterization, micro-nano processing, electrical property test, magnetic test and the like can be carried out in a protective atmosphere environment through design and integration.
Drawings
Embodiments of the invention are described in detail below with reference to the attached drawing figures, wherein:
fig. 1 is a schematic diagram of a micro-nano processing system according to an embodiment of the present invention;
FIG. 2(a) is an image under an optical microscope of a sample after being subjected to a developing operation according to an embodiment of the present invention;
FIG. 2(b) is an image under an optical microscope of a sample after a stripping operation according to an embodiment of the present invention;
wherein, the reference numbers:
1-other closed box body under protective atmosphere environment; 2-sample inlet and outlet pipes; 3-sealing the chemical reagent in the box body; 4-a first airtight box observation window; 5-a first rubber glove interface; 6-hot plate; 7-a spin coater; 8-developing solution; 9-degumming liquid; 10-photoresist; 11-a refrigerator; 12-a first sample transfer channel; 13-ultraviolet exposure of the closed box body; 14-a second airtight box observation window; 15-a second rubber glove interface; 16-mercury lamps; 17-alignment station; 18-a display; 19-a second sample transfer channel; 20-a sample carrier; 21-preparing a closed box body by ion beam etching; 22-a third airtight box observation window; 23-a third rubber glove interface; 24-vacuum gate valve; 25-ion beam etching vacuum chamber; 26-ion beam etching unit observation window; 27-a sample stage; 28-a cooling device; 29-kaufman ion source; 30-a first gas circulation channel; 31-a gas cleaning tank; 32-a fan; 33-oxygen water purification column; 34-an organic gas purification column; 35-a second gas circulation channel; 36-a first solenoid valve; 37-a source of gas; 38-a second solenoid valve; 39-a mechanical pump; 40-gas pressure probe; 41-oxygen content probe; 42-Water vapor content Probe.
Detailed Description
Referring now to the drawings, illustrative aspects of the disclosed structure will be described in detail. Although the drawings are provided to present embodiments of the invention, the drawings are not necessarily to scale of particular embodiments, and certain features may be exaggerated, removed, or partially sectioned to better illustrate and explain the present disclosure. Certain directional terms used hereinafter to describe the accompanying drawings will be understood to have their ordinary meaning and refer to those directions as they normally appear in the drawings.
Referring to fig. 1, fig. 1 shows a schematic diagram of a micro-nano processing system according to an embodiment of the present invention. The micro-nano processing system comprises: the device comprises a chemical reagent sealing unit, an ultraviolet exposure sealing unit, an etching unit and a gas purification unit; the chemical reagent sealing unit, the ultraviolet exposure sealing unit and the etching unit are communicated through a sample transfer channel; the gas purification unit is in gas-tight communication with the chemical reagent sealing unit, the ultraviolet exposure sealing unit and the etching unit through a gas circulation channel, so that the micro-nano processing system forms a gas circulation loop; the etching unit comprises an ion beam etching preparation unit and an ion beam etching unit which are hermetically communicated through a vacuum gate valve 24; the micro-nano processing system also comprises a sample inlet and outlet pipeline 2, so that a sample can enter and exit the micro-nano processing system.
In a specific embodiment of the present invention, the sample inlet and outlet pipe 2 is provided with sealing valves on both sides. The two ends of the first sample transfer channel 12 are provided with sealing valves. A sample carrier 20 is provided in the second sample transfer channel 19 so that the sample is free to move within the sample transfer channel. The second gas circulation passage 35 is provided with an oxygen content probe 41, a water vapor content probe 42 and a gas pressure probe 40.
In the specific embodiment of the invention, the chemical reagent sealing unit comprises a chemical reagent sealing box body 3, and a hot plate 6, a photoresist homogenizer 7, a developing solution 8, a photoresist removing solution 9, a photoresist 10 and a refrigerator 11 which are arranged in the chemical reagent sealing box body; the photoresist 10 is placed in a refrigerator 11; the chemical reagent closed box 3 is provided with a first closed box observation window 4 and a first rubber glove interface 5.
In a specific embodiment of the present invention, the ultraviolet exposure sealing unit includes an ultraviolet exposure sealing box body 13 and an ultraviolet exposure machine disposed therein; a second airtight box observation window 14 and a second rubber glove interface 15 are arranged on the ultraviolet exposure airtight box 13; the ultraviolet exposure machine comprises a mercury lamp 16, an alignment stage 17 and a display 18.
In a specific embodiment of the present invention, the ion beam etching preparation unit includes an ion beam etching preparation enclosure 21; the ion beam etching preparation closed box body 21 is provided with a third closed box body observation window 22 and a third rubber glove interface 23.
In a specific embodiment of the present invention, the ion beam etching unit comprises an ion beam etching vacuum chamber 25 and a koffman ion source 29; a sample stage 27 and a cooling device 28 are provided in the ion beam etching vacuum chamber 25. The ion beam etching vacuum chamber 25 is provided with an ion beam etching unit observation window 26.
In a specific embodiment of the present invention, the gas purification unit includes a gas purification tank 31 and a blower 32, an oxygen water purification column 33 and an organic gas purification column 34 disposed therein.
In a specific embodiment of the invention, the gas pressure in the micro-nano processing system is regulated and controlled by a gas purification unit. A gas pressure probe 40 may be disposed on the second gas circulation channel 35 to detect a gas pressure within the micro-nano processing system. A mechanical pump 39 and a protective gas source 37 may be connected to the second gas circulation passage 35 through solenoid valves, respectively. In order to keep the balance between the air pressure in the air circulation channel and the air pressure of the surrounding environment of the system, within a set error range, when the value detected by the air pressure probe 40 is smaller than the air pressure value of the surrounding environment of the system, the first electromagnetic valve 36 is opened, and the protective air source 37 replenishes air into the air circulation channel; when the gas pressure probe 40 detects a value greater than the pressure of the ambient environment of the system, the second solenoid valve 38 is opened and the mechanical pump 39 draws gas from the gas circulation path.
The micro-nano processing of the sample generally comprises the steps of sample preparation, glue evening, pre-baking, exposure, post-baking, etching, photoresist removing and the like, and the invention also comprises the operation step of sample transfer. In a particular embodiment of the invention, the sample transfer is performed within a sample transfer channel. The transfer of the sample is performed under a controlled protective atmosphere. When the distance between the two closed boxes involved in the sample transfer is short, the sample can be directly transferred manually through the sample transfer channel. When the distance between the two closed box bodies is long, the sample can be transferred by the sample carrier. In the embodiment of the invention, a fixed pulley is arranged at both ends of the longer sample transfer channel, and the sample carrier can move back and forth in the sample transfer channel by virtue of the fixed pulley and the thread rope, so that the sample transfer is realized. The present disclosure is further illustrated by the specific operating procedures set forth below.
Step 1: sample preparation
The operation step is carried out in a chemical reagent closed box body. And transferring the sample to be treated into the chemical reagent closed box body from the closed box body under other protective atmosphere environments through the sample inlet and outlet pipe. The surface of the sample is checked for cleanliness, and if there is contamination, decontamination can be performed by physical or chemical means, depending on the actual situation.
Step 2: glue homogenizing
The operation step is carried out in a chemical reagent closed box body. Under the condition of yellow light, firstly, placing a sample on a working position of a spin coater; then, the photoresist was taken out of the refrigerator; and (3) dropping the photoresist on the surface of the sample, and flattening and uniformly coating the photoresist on the surface of the sample after low-speed rotation and high-speed rotation.
And step 3: prebaking
The operation step is carried out in a chemical reagent closed box body. Transferring the sample obtained in the step 2 to a heating plate under the condition of yellow light, baking, removing the solvent in the photoresist, releasing the stress in the photoresist, preventing the photoresist from polluting equipment and the like.
And 4, step 4: exposure to light
The operation steps are carried out in an ultraviolet exposure closed box body. And (3) under the condition of yellow light, naturally cooling the sample obtained in the step (3), and transferring the sample into an ultraviolet exposure closed box. The ultraviolet exposure equipment in the box body comprises components such as a mercury lamp, an alignment operating platform, a display and the like. And (3) placing the sample on an operation platform, realizing the alignment of the sample and the photoetching plate by means of the alignment operation platform and a display, and then opening a shutter between the mercury lamp and the sample to realize the exposure of the sample.
And 5: after-baking
The operation step is carried out in a chemical reagent closed box body. And (3) transferring the sample obtained in the step (4) back to the chemical reagent closed box under the condition of yellow light, then placing the chemical reagent closed box on a heating plate, and baking.
Step 6: development
The operation step is carried out in a chemical reagent closed box body. And (3) under the condition of yellow light, after the sample obtained in the step (5) is naturally cooled, developing the sample by using a developing solution. After development, a pattern of the photoresist can be obtained, as shown in fig. 2 (a).
And 7: etching of
The operation steps are carried out in an ion beam etching preparation unit and an ion beam etching unit. The etching can be further specifically divided into: (a) transferring the sample obtained in the step 6 into an ion beam etching preparation unit; (b) filling an atmospheric pressure into the ion beam etching vacuum chamber, and opening a vacuum gate valve between the ion beam etching vacuum chamber and the ion beam etching preparation closed box body; placing a sample on a sample table in an ion beam etching vacuum chamber through an ion beam etching preparation unit, wherein an observation window of the ion beam etching unit can help to adjust the position of the sample to be etched; in addition, the sample stage is connected with a cooling device to prevent the photoresist on the sample from being carbonized due to overheating in etching; (c) closing the vacuum gate valve, and vacuumizing the ion beam etching vacuum chamber to below 1.0 × 10 -4 Pa; (d) and rotating the angle of the sample table to enable the sample table to face the Kaufman ion source, then opening the Kaufman ion source, and etching the sample by the electrically neutral argon atoms emitted by the Kaufman ion source to obtain the required sample protected by the photoresist pattern.
And 8: resist stripping
The operation step is carried out in a chemical reagent closed box body. And (4) transferring the sample obtained in the step (7) back to the chemical reagent closed box, and then soaking the sample in the photoresist removing liquid to remove the photoresist on the surface of the sample. The microstructure micrograph of the sample after the photoresist was removed is shown in FIG. 2 (b).
All the operations described above are carried out in a closed box or vacuum chamber, i.e. all the operations are carried out under a controlled protective atmosphere. After the sample is subjected to micro-processing, the sample can be transferred into a closed box under other protective atmosphere environments for operations such as packaging and the like.
In design, air leaks into the sealed box body continuously and weakly, so that the content of oxygen and water vapor of protective atmosphere gas is increased continuously, and meanwhile, organic gas molecules are volatilized into the gas environment of the sealed box body in the operation steps of glue homogenizing, developing, glue removing and the like. In order to keep the residual oxygen and water vapor content of the protective atmosphere at a low level and to remove small amounts of organic gas molecules from the gas, a gas purification unit is provided. The gas purification unit mainly comprises a gas purification box body, a fan, an oxygen water purification column, an organic molecule purification column and the like. The gas purification unit is connected with the closed box body through a sample transfer channel or a gas circulation channel to form a closed loop. Under the action of the fan, the protective gas circulates in the closed loop. When the gas is circulated to the oxygen water purification column, residual oxygen and water vapor in protective atmosphere gas can be respectively adsorbed by the copper catalyst and the molecular sieve in the oxygen water purification column, so that the content of the oxygen and the water vapor is ensured to meet the standard of less than 0.1 ppm. The oxygen and water vapor contents are read by the oxygen content probe and the water vapor content probe. When the gas is circulated to the organic molecule purification column, it passes through the activated carbon inside to adsorb organic gas molecules in the protective atmosphere gas.
The operation of the gas purification unit mainly comprises circulation, gas washing, regeneration of oxygen water purification column materials, replacement of organic molecule purification column materials and the like. The circulation operation is as follows: the fan is turned on and the two purification columns are turned on to circulate the protective atmosphere in the purification system and the closed box. The gas washing operation is as follows: and (4) closing the fan and the two purification columns, and replacing the polluted protective atmosphere in the closed box body by using clean protective atmosphere. The regeneration operation of the oxygen water purification column material is as follows: and closing the fan and the oxygen water purification column, and reducing the purification materials (copper catalyst and molecular sieve) which are adsorbed with enough oxygen and water vapor in the oxygen water purification column by using reducing gas such as mixed gas of hydrogen and argon. The material of the organic molecule purifying column is replaced, and the active carbon in the organic molecule purifying column is replaced regularly.
Finally, it should be noted that the above embodiments are only used for illustrating the technical solutions of the present invention and are not limited. Although the present invention has been described in detail with reference to the embodiments, it will be understood by those skilled in the art that various changes may be made and equivalents may be substituted without departing from the spirit and scope of the invention as defined in the appended claims.
Claims (10)
1. A micro-nano machining system comprises:
the device comprises a chemical reagent sealing unit, an ultraviolet exposure sealing unit, an etching unit and a gas purification unit; wherein the content of the first and second substances,
the chemical reagent sealing unit, the ultraviolet exposure sealing unit and the etching unit are communicated through a sample transfer channel; the gas purification unit is in gas-tight communication with the chemical reagent sealing unit, the ultraviolet exposure sealing unit and the etching unit through a gas circulation channel, so that the micro-nano processing system forms a gas circulation loop; the etching unit comprises an ion beam etching preparation unit and an ion beam etching unit which are hermetically communicated through a vacuum gate valve;
the micro-nano processing system also comprises a sample inlet and outlet pipeline for the sample to enter and leave the micro-nano processing system.
2. The micro-nano processing system according to claim 1, wherein sealing valves are arranged on two sides of the sample inlet and outlet pipeline.
3. The micro-nano processing system according to claim 1, wherein a sample carrier is arranged in the sample transfer channel, so that the sample can move freely in the sample transfer channel.
4. The micro-nano processing system according to claim 1, wherein two ends of the sample transfer channel are provided with sealing valves.
5. The micro-nano processing system according to claim 1, wherein an oxygen content probe, a water vapor content probe and a gas pressure probe are arranged on the gas circulation channel.
6. The micro-nano processing system according to claim 1, wherein the chemical reagent sealing unit comprises a chemical reagent sealing box body, and a hot plate, a spin coater, a developing solution, a degumming solution, a photoresist and a refrigerator which are arranged in the chemical reagent sealing box body;
preferably, the photoresist is placed in the refrigerator;
preferably, a first airtight box observation window and a first rubber glove interface are arranged on the chemical reagent airtight box.
7. The micro-nano processing system according to claim 1, wherein the ultraviolet exposure closed unit comprises an ultraviolet exposure closed box body and an ultraviolet exposure machine arranged in the ultraviolet exposure closed box body;
preferably, a second airtight box observation window and a second rubber glove interface are arranged on the ultraviolet exposure airtight box;
preferably, the ultraviolet exposure machine comprises a mercury lamp light source, an alignment stage and a display.
8. The micro-nano processing system according to claim 1, wherein the ion beam etching preparation unit comprises an ion beam etching preparation closed box; and a third airtight box body observation window and a third rubber glove interface are arranged on the ion beam etching preparation airtight box body.
9. The micro-nano processing system according to claim 1, wherein the ion beam etching unit comprises an ion beam etching vacuum chamber and a koffman ion source; a sample stage and a cooling device are arranged in the ion beam etching vacuum chamber;
preferably, the ion beam etching vacuum chamber is provided with an ion beam etching unit observation window.
10. The micro-nano processing system according to claim 1, wherein the gas purification unit comprises a gas purification box body and a fan, an organic gas purification column and an oxygen water purification column which are arranged in the gas purification box body.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110208646.9A CN114975161A (en) | 2021-02-24 | 2021-02-24 | Micro-nano machining system |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202110208646.9A CN114975161A (en) | 2021-02-24 | 2021-02-24 | Micro-nano machining system |
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| CN114975161A true CN114975161A (en) | 2022-08-30 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115666005A (en) * | 2022-12-15 | 2023-01-31 | 赛福仪器承德有限公司 | Plasma etching machine |
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2021
- 2021-02-24 CN CN202110208646.9A patent/CN114975161A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115666005A (en) * | 2022-12-15 | 2023-01-31 | 赛福仪器承德有限公司 | Plasma etching machine |
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