CN114959572A - Tungsten-doped tantalum-hafnium carbide thin film material and preparation method thereof - Google Patents
Tungsten-doped tantalum-hafnium carbide thin film material and preparation method thereof Download PDFInfo
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- 239000000463 material Substances 0.000 title claims abstract description 25
- 238000002360 preparation method Methods 0.000 title claims abstract description 15
- 239000010409 thin film Substances 0.000 title claims description 7
- QKQUUVZIDLJZIJ-UHFFFAOYSA-N hafnium tantalum Chemical compound [Hf].[Ta] QKQUUVZIDLJZIJ-UHFFFAOYSA-N 0.000 title description 3
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 45
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims abstract description 43
- 239000010937 tungsten Substances 0.000 claims abstract description 43
- 238000004544 sputter deposition Methods 0.000 claims abstract description 34
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 10
- 229910052751 metal Inorganic materials 0.000 claims abstract description 10
- 239000002184 metal Substances 0.000 claims abstract description 10
- 239000010408 film Substances 0.000 claims description 56
- 239000000758 substrate Substances 0.000 claims description 13
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 11
- 230000008569 process Effects 0.000 claims description 10
- 239000013077 target material Substances 0.000 claims description 10
- 229910052786 argon Inorganic materials 0.000 claims description 5
- 239000000126 substance Substances 0.000 claims description 4
- 239000012300 argon atmosphere Substances 0.000 claims description 2
- 238000006243 chemical reaction Methods 0.000 claims description 2
- 238000007373 indentation Methods 0.000 description 7
- 238000005477 sputtering target Methods 0.000 description 6
- 239000013078 crystal Substances 0.000 description 5
- 239000011215 ultra-high-temperature ceramic Substances 0.000 description 5
- 229910010293 ceramic material Inorganic materials 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 229910052735 hafnium Inorganic materials 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 1
- -1 argon ions Chemical class 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0635—Carbides
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
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Abstract
The invention discloses a tungsten doped Ta 0.5 Hf 0.5 C, a film material and a film preparation method. Preparing metal tungsten doped Ta by using magnetron sputtering equipment and adopting a double-target co-sputtering mode 0.5 Hf 0.5 C film, and undoped Ta 0.5 Hf 0.5 And C, comparing the film, wherein the microstructure and the mechanical property of the film are changed, and research results show that the face-centered cubic structure of the sample is changed along with the increase of the tungsten doping amount, the grain size and the roughness are gradually reduced, and the section appearance of the film is high in density. Simultaneously, tungsten dopes Ta 0.5 Hf 0.5 The hardness and the toughness of the C film are both obviously improved.
Description
Technical Field
The invention belongs to the technical field of ultra-high temperature ceramic materials, and particularly relates to tungsten-doped tantalum hafnium carbide (Ta) 0.5 Hf 0.5 C) A film material and a preparation method thereof.
Background
Ultra High Temperature Ceramics (UHTCs) generally refer to a special class of ceramic materials that have melting points in excess of 3000 c and maintain stable physical and chemical properties in extreme environments, and generally include transition metal borides, carbides, nitrides and composites thereof. Extreme environments generally refer to a combination of high temperature, reactive atmospheres (e.g., atomic oxygen, plasma, etc.), mechanical loads, and wear.
TaC and HfC are the most representative ultra-high temperature ceramic materials, the melting points of the TaC and the HfC are 3768 ℃ and 3958 ℃ respectively, the hardness of the TaC and the HfC is 18.9GPa and 22.1GPa respectively, and the TaC and the HfC are Ta obtained by solution treatment 0.5 Hf 0.5 The hardness of C material is even as high as 30GPa, however, the lower fracture toughness greatly limits Ta 0.5 Hf 0.5 Service life of C material.
With the progress of research, researchers found that the toughness of the ultra-high temperature ceramic can be improved by doping tungsten element, in 2020, a paper published by Jiaojiao Hu, and regarding the improvement of the toughness of the TaC film by doping tungsten element, the toughening mechanism is that the occupancy rate of the metal state on the fermi level is improved due to the increase of valence electron concentration, so that the electronic structure of the layer formed in the d-t2g metal state allows the crystal structure to respond to the deformation selectivity. Ta of Experimental preparation 0.69 W 0.31 C 0.75 The hardness and toughness of the film are respectively 43.9GPa and 3.95 MPa.m 1/2 Much higher than TaC (28.1GPa, 2.4 MPa.m) 1/2 )。
In the magnetron sputtering coating, electrons rapidly fly to a substrate under the driving action of an electric field, and in the motion process, the electrons collide with argon atoms in a cavity, so that the argon atoms are ionized to generate argon ions and new electrons; the new electrons quickly fly to the substrate, argon particles bombard the surface of the cathode target at high speed under the action of an electric field, so that sputtering occurs on the surface of the target, and escaped target atoms or molecules are freely diffused and gradually deposited on the substrate to form a film. No chemical reaction and impurity generation in the deposition process, so the prepared film has high purity and good compactness, and can obtain a film with uniform thickness on a large-area substrate
Disclosure of Invention
Aiming at the defects of the prior art, the invention aims to provide tungsten-doped Ta with good mechanical property 0.5 Hf 0.5 C, a film material and a preparation method thereof.
In order to achieve the purpose, the invention adopts the following technical scheme:
the invention relates to tungsten doped Ta 0.5 Hf 0.5 C thin film material of said tungsten doped Ta 0.5 Hf 0.5 C, a film material, the chemical structural formula of which is: ta (1-x)/2 Hf (1-x)/2 W x C, wherein 0 < X ≦ 2, preferably 1 ≦ X ≦ 2.
The invention relates to tungsten doped Ta 0.5 Hf 0.5 The preparation method of the C film material adopts a magnetron sputtering mode to prepare Ta 0.5 Hf 0.5 Sputtering the C target material and the tungsten target material in the Si substrate at the same time to obtain the tungsten doped Ta 0.5 Hf 0.5 C, thin film material.
The invention is prepared by a magnetron sputtering coating system and a double-target co-sputtering method in one step.
In the actual operation process, a magnetron sputtering device is used for mixing the metal tungsten target material and Ta 0.5 Hf 0.5 The C target material is arranged on two direct current sputtering targets for sputtering.
Preferred embodiment, said Ta 0.5 Hf 0.5 The purity of the C target and the purity of the tungsten target are both equal to or larger than 99.99%.
Preferably, the Si substrate is a Si (100) substrate.
Preferably, the magnetron sputtering is performed in an argon atmosphere, and the purity of argon is not less than 99.99%.
Preferably, in the sputtering process, the sputtering power of the metal tungsten target is 10-20w, and Ta 0.5 Hf 0.5 The sputtering power of the C target was 70w,
preferably, the sputtering time is 2 h.
The change of the tungsten doping amount during the sputtering process can be realized by various ways, such as adjusting different sputtering parameters (such as sputtering power and the like) of a DC sputtering target provided with a metal tungsten target material, adjusting different sputtering parameters provided with Ta 0.5 Hf 0.5 Different sputtering parameters (such as sputtering power and the like) of the DC sputtering target of the C target,
or adjust operating environment parameters (such as operating pressure, substrate temperature, etc.) within the chamber. In order to ensure the stability and easy control of the preparation process conditions, the invention determines other variable conditions and fixes one sputtering target (tungsten target) by changing the sputtering power of the other sputtering target (Ta target) 0.5 Hf 0.5 C target) to achieve effective control of the amount of tungsten doped in the film. Fixing Ta 0.5 Hf 0.5 The sputtering power of the C target is 70w, the sputtering power of the tungsten target is controlled within the range of 10-20w, and different x values can be obtained.
Advantageous effects
The invention discloses a tungsten-doped Ta 0.5 Hf 0.5 C film material and a preparation method thereof, wherein the Ta doped with metal tungsten is prepared by utilizing magnetron sputtering equipment and adopting a double-target co-sputtering mode 0.5 Hf 0.5 C film, and undoped Ta 0.5 Hf 0.5 And C, comparing the film, wherein the microstructure and the mechanical property of the film are changed, and research results show that the face-centered cubic structure of the sample is changed along with the increase of the tungsten doping amount, the grain size and the roughness are gradually reduced, and the section appearance of the film is high in density. Simultaneously, tungsten dopes Ta 0.5 Hf 0.5 The hardness and the toughness of the C film are both obviously improved.
Drawings
FIG. 1 is a schematic representation of different Ta (1-x)/2 Hf (1-x)/2 W x C, XRD pattern of the film sample,
FIG. 2 is a graph of different Ta (1-x)/2 Hf (1-x)/2 W x C film sample grain size diagram,
FIG. 3 is a graph of different Ta (1-x)/2 Hf (1-x)/2 W x C film cross-sectional topography (a) Ta 0.5 Hf 0.5 C(b)Ta 4.255 Hf 4.255 W 1.49 C(c)Ta 4.15 Hf 4.15 W 1.7 C，
FIG. 4 is a graph of different Ta (1-x)/2 Hf (1-x)/2 W x Surface morphology and energy spectrum of C film (a) Ta 0.5 Hf 0.5 C，(b)Ta 4.255 Hf 4.255 W 1.49 C，(c)Ta 4.15 Hf 4.15 W 1.7 C，
FIG. 5 is a graph of different Ta (1-x)/2 Hf (1-x)/2 W x Surface morphology and energy spectrum of C film (a) Ta 0.5 Hf 0.5 C，(b)Ta 4.255 Hf 4.255 W 1.49 C，(c)Ta 4.15 Hf 4.15 W 1.7 C，
FIG. 6 is a graph of different Ta (1-x)/2 Hf (1-x)/2 W x C film hardness and Young's modulus,
FIG. 7 is a graph of different Ta (1-x)/2 Hf (1-x)/2 W x C film indentation Pattern (a) Ta 0.5 Hf 0.5 C，(b)Ta 4.255 Hf 4.255 W 1.49 C，(c)Ta 4.15 Hf 4.15 W 1.7 C。
Detailed Description
Ta obtained by the invention (1-x)/2 Hf (1-x)/2 W x And C, analyzing the phase, microstructure and mechanical property of the film, and measuring the film by using an X-ray diffractometer (XRD), a Scanning Electron Microscope (SEM), an energy spectrometer (EDS) and a nanoindenter respectively.
Analyzing structural characteristics of a material is a fundamental way to obtain material properties. Measuring Ta with X-ray diffractometer (1-x)/ 2 Hf (1-x)/2 W x C, the phase of the film, the diffraction angle scanning range is from 10 degrees to 90 degrees, the scanning speed is 2 degrees/min, and the step length is 0.02 degrees.
The cross section and the surface of the film are photographed by a scanning electron microscope, and the content of tungsten in the film is measured by an energy spectrometer. Resolution of scanning electron microscope is 3NM, and acceptance magnification is 100000 times. Accelerating voltage of 1-30 KV and vacuum degree of 10 - 5 Pa。
The mechanical property of the film is measured by using a nano-indenter, the adopted pressure head is a glass pressure head, the load is controlled by a computer to continuously apply pressure, and the pressing depth is recorded on line. A complete indentation process comprises two steps, a loading process and an unloading process. During the loading process, a pressure head with certain load and a pressing-in speed are set, when the pressure head is gradually pressed into the surface of the sample, the depth of the pressed-in sample is increased along with the increase of the load of the pressure head, and when the load is increased to the maximum, the slow unloading is started. The parameters are set as the loading/unloading speed of 2000N/min, the load-holding time of 15s, the loading depth of 800nm and the loading frequency of 5.0 Hz.
Example 1
Using a magnetron sputtering device to mix a metal tungsten target material and Ta 0.5 Hf 0.5 C, mounting a target material in two direct current sputtering targets, wherein the purity of the target material is 99.99 percent, selecting a Si (100) substrate as a substrate, and plating a film at room temperature under the condition that working gas is high-purity argon of 99.99 percent; in the sputtering process, the sputtering power of the metal tungsten target is 10-20w, Ta 0.5 Hf 0.5 The sputtering power of the C target was fixed at 70w, and the sputtering time was 2 h.
TABLE 1 Ta prepared at different sputtering powers (1-x)/2 Hf (1-x)/2 W x C film sample and tungsten content therein
TABLE 2 different Ta (1-x)/2 Hf (1-x)/2 W x C average film crack length C (μm)
TABLE 3 different Ta (1-x)/2 Hf (1-x)/2 W x Fracture toughness of C film
Measuring Ta with X-ray diffractometer (1-x)/2 Hf (1-x)/2 W x C film phase structure is shown in FIG. 1, diffraction peak angles of the film are 34.15 degrees, 39.62 degrees, 57.23 degrees, 68.46 degrees and 71.80 degrees, corresponding crystal planes are (111), (200), (220), (311) and (222), and with the increase of sputtering power, the crystal planes are respectively (111), (200), (220), (311) and (222)Additionally, the diffraction peaks of the film showed a tendency to decrease gradually first. This is because the W atom replaces Hf and Ta atoms having a large atomic radius (the atomic radii of Hf, Ta and W are 1.59, 1.48 and 1.41, respectively), resulting in contraction of the lattice, and the contracted lattice causes the diffraction peak position to gradually move toward a high angle. Calculating to obtain different Ta (1-x)/2 Hf (1-x)/2 W x The grain size of the C film, both of which show a tendency to decrease gradually, is reduced from 21.56nm to 10.02nm,
different Ta (1-x)/2 Hf (1-x)/2 W x And C, as shown in FIG. 3, it can be observed that each film sample grows in a typical columnar crystal structure, the density of the cross-sectional morphology of the film is high, the porosity is low, and clear crystal columns can be observed in the diagram. In the surface diagram of the film (fig. 4), the appearance of small protruded spots on the surface is observed, the distribution is not uniform, larger protrusions are locally presented, obvious grooves can be clearly observed, and when the sputtering power of the tungsten target is 10w and 15w, the tungsten content in the film is 14.1 percent and 17.0 percent respectively.
Different Ta (1-x)/2 Hf (1-x)/2 W x C film hardness and Young's modulus graph (figure 5), when the W target sputtering power is increased from 0W to 10W, the film hardness is increased from 27.6GPa to 35.9GPa, the hardness value has larger change, and the Young's modulus is increased from 326.4GPa to 353 GPa; when the sputtering power of the W target is 15W, the hardness and Young's modulus values reach maximum values of 38.9GPa and 373.3GPa, respectively, and the hardness increase rate is 8% and the Young's modulus increase rate is 5.7% relative to a thin film with the sputtering power of the W target of 10W.
The film is subjected to indentation experiments by using an indentation method, the indentation depth of a sample is 800nm, the indentation triangle morphology is intercepted and shot through SEM, the types of cracks generated by all film indentations are found to be radial cracks through the observation of shot SEM pictures, then the radial crack length of each sample film in three directions is measured, the average value is calculated, and the average crack length (c) and other experiment parameters are substituted into a formula. As shown in Table 2, the fracture toughness of the thin film was 3.15MPa · m, respectively, as the tungsten target power was increased 1/2 、3.25MPa·m 1/2 And 3.30 MPa.m 1/2 。
The formula of fracture toughness, the formula parameters are respectively P: 200 mN: load applied to the indenter, h (gpa): hardness, E (GPa): young's modulus, α: and the empirical coefficient of the shape of the pressure head is 0.032.
Claims (8)
1. Tungsten doped Ta 0.5 Hf 0.5 C film material, its characterized in that: the tungsten is doped with Ta 0.5 Hf 0.5 C, a film material, the chemical structural formula of which is: ta (1-x)/2 Hf (1-x)/2 W x C, wherein 0 < X ≦ 2.
2. A tungsten doped Ta according to claim 1 0.5 Hf 0.5 C film material, its characterized in that: the tungsten is doped with Ta 0.5 Hf 0.5 C, a film material with a chemical structural formula as follows: ta (1-x)/2 Hf (1-x)/2 W x C, wherein 1 < X ≦ 2.
3. A tungsten doped Ta as claimed in claim 1 or 2 0.5 Hf 0.5 The preparation method of the film material is characterized by comprising the following steps: adopting a magnetron sputtering mode to carry out the reaction on Ta 0.5 Hf 0.5 Sputtering the C target material and the tungsten target material in the Si substrate at the same time to obtain the tungsten doped Ta 0.5 Hf 0.5 C, thin film material.
4. A tungsten doped Ta according to claim 3 0.5 Hf 0.5 The preparation method of the film material is characterized by comprising the following steps: said Ta 0.5 Hf 0.5 The purity of the C target and the purity of the tungsten target are both equal to or larger than 99.99%.
5. A tungsten doped Ta according to claim 3 0.5 Hf 0.5 The preparation method of the film material is characterized by comprising the following steps: the Si substrate is a Si (100) substrate.
6. A tungsten doped Ta according to claim 3 0.5 Hf 0.5 The preparation method of the film material is characterized by comprising the following steps: the magnetron sputtering is performed in an argon atmosphere, and the purity of argon is not less than 99.99%.
7. A tungsten doped Ta according to claim 3 0.5 Hf 0.5 The preparation method of the film material is characterized by comprising the following steps: in the sputtering process, the sputtering power of the metal tungsten target is 10-20w, Ta 0.5 Hf 0.5 The sputtering power of the C target was 70 w.
8. A tungsten doped Ta according to claim 3 0.5 Hf 0.5 The preparation method of the film material is characterized by comprising the following steps: the sputtering time is 2 h.
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020024050A1 (en) * | 1996-03-07 | 2002-02-28 | Caldus Semiconductor, Inc. | Method of making SiC semiconductor devices with W/WC/TaC contacts |
| US20060110626A1 (en) * | 2004-11-24 | 2006-05-25 | Heraeus, Inc. | Carbon containing sputter target alloy compositions |
| CN109735804A (en) * | 2019-01-30 | 2019-05-10 | 湘潭大学 | A kind of metcar coating and preparation method thereof |
| CN110158034A (en) * | 2019-05-10 | 2019-08-23 | 中国科学院上海技术物理研究所 | The method of a kind of More target sputtering together preparation heterogeneity and doping than film |
| CN111978088A (en) * | 2020-07-28 | 2020-11-24 | 湘潭大学 | Toughened ultrahigh-density ultrahigh-temperature ablation-resistant coating and preparation method thereof |
-
2022
- 2022-05-23 CN CN202210561787.3A patent/CN114959572A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020024050A1 (en) * | 1996-03-07 | 2002-02-28 | Caldus Semiconductor, Inc. | Method of making SiC semiconductor devices with W/WC/TaC contacts |
| US20060110626A1 (en) * | 2004-11-24 | 2006-05-25 | Heraeus, Inc. | Carbon containing sputter target alloy compositions |
| CN109735804A (en) * | 2019-01-30 | 2019-05-10 | 湘潭大学 | A kind of metcar coating and preparation method thereof |
| CN110158034A (en) * | 2019-05-10 | 2019-08-23 | 中国科学院上海技术物理研究所 | The method of a kind of More target sputtering together preparation heterogeneity and doping than film |
| CN111978088A (en) * | 2020-07-28 | 2020-11-24 | 湘潭大学 | Toughened ultrahigh-density ultrahigh-temperature ablation-resistant coating and preparation method thereof |
Non-Patent Citations (2)
| Title |
|---|
| HU JIAOJIAO: "Super-hard and tough Ta1-xWxCy films deposited by magnetron sputtering", SURFACE & COATINGS TECHNOLOGY * |
| TAN, Z.Y.: "Reactive plasma spraying of supersaturated tungsten super-hard Ta-Hf-W-C solid solution coating", JOURNAL OF THE EUROPEAN CERAMIC SOCIETY * |
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