CN114956084A - Preparation method of Al-doped MXene - Google Patents
Preparation method of Al-doped MXene Download PDFInfo
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- CN114956084A CN114956084A CN202110215742.6A CN202110215742A CN114956084A CN 114956084 A CN114956084 A CN 114956084A CN 202110215742 A CN202110215742 A CN 202110215742A CN 114956084 A CN114956084 A CN 114956084A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 10
- 238000000034 method Methods 0.000 claims abstract description 26
- 239000000463 material Substances 0.000 claims abstract description 21
- 238000001354 calcination Methods 0.000 claims abstract description 17
- 150000003839 salts Chemical class 0.000 claims abstract description 16
- 238000005530 etching Methods 0.000 claims abstract description 11
- 238000003486 chemical etching Methods 0.000 claims abstract description 3
- 238000005406 washing Methods 0.000 claims description 17
- 229910052782 aluminium Inorganic materials 0.000 claims description 12
- 239000002243 precursor Substances 0.000 claims description 11
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 10
- 238000001035 drying Methods 0.000 claims description 8
- 238000002156 mixing Methods 0.000 claims description 6
- 239000012535 impurity Substances 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 238000012216 screening Methods 0.000 claims description 2
- 229910016747 AlCl3—NaCl—KCl Inorganic materials 0.000 claims 1
- 230000003064 anti-oxidating effect Effects 0.000 claims 1
- 239000012620 biological material Substances 0.000 claims 1
- 239000002131 composite material Substances 0.000 claims 1
- 239000004020 conductor Substances 0.000 claims 1
- 238000000926 separation method Methods 0.000 claims 1
- 230000003647 oxidation Effects 0.000 abstract description 10
- 238000007254 oxidation reaction Methods 0.000 abstract description 10
- 239000007864 aqueous solution Substances 0.000 abstract description 6
- BUKHSQBUKZIMLB-UHFFFAOYSA-L potassium;sodium;dichloride Chemical compound [Na+].[Cl-].[Cl-].[K+] BUKHSQBUKZIMLB-UHFFFAOYSA-L 0.000 abstract description 4
- 229910052751 metal Inorganic materials 0.000 abstract description 3
- 239000002184 metal Substances 0.000 abstract description 3
- 239000002086 nanomaterial Substances 0.000 abstract description 3
- 239000012071 phase Substances 0.000 description 33
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 20
- 239000000203 mixture Substances 0.000 description 15
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 10
- 239000002244 precipitate Substances 0.000 description 10
- 238000000227 grinding Methods 0.000 description 8
- 239000000243 solution Substances 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 7
- 239000000843 powder Substances 0.000 description 7
- 238000003786 synthesis reaction Methods 0.000 description 7
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 238000001816 cooling Methods 0.000 description 5
- 238000001914 filtration Methods 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- WCUXLLCKKVVCTQ-UHFFFAOYSA-M Potassium chloride Chemical compound [Cl-].[K+] WCUXLLCKKVVCTQ-UHFFFAOYSA-M 0.000 description 4
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 4
- 239000003963 antioxidant agent Substances 0.000 description 4
- 230000003078 antioxidant effect Effects 0.000 description 4
- 239000008367 deionised water Substances 0.000 description 4
- 229910021641 deionized water Inorganic materials 0.000 description 4
- 238000011049 filling Methods 0.000 description 4
- 239000011888 foil Substances 0.000 description 4
- 229910002804 graphite Inorganic materials 0.000 description 4
- 239000010439 graphite Substances 0.000 description 4
- 239000011259 mixed solution Substances 0.000 description 4
- 238000005245 sintering Methods 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 230000007547 defect Effects 0.000 description 3
- 238000009830 intercalation Methods 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- 238000007873 sieving Methods 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 229910018575 Al—Ti Inorganic materials 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000011258 core-shell material Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000007791 liquid phase Substances 0.000 description 2
- KWGKDLIKAYFUFQ-UHFFFAOYSA-M lithium chloride Chemical compound [Li+].[Cl-] KWGKDLIKAYFUFQ-UHFFFAOYSA-M 0.000 description 2
- 239000000376 reactant Substances 0.000 description 2
- 238000002791 soaking Methods 0.000 description 2
- 239000011780 sodium chloride Substances 0.000 description 2
- 229910052723 transition metal Inorganic materials 0.000 description 2
- 150000003624 transition metals Chemical class 0.000 description 2
- CPELXLSAUQHCOX-UHFFFAOYSA-M Bromide Chemical class [Br-] CPELXLSAUQHCOX-UHFFFAOYSA-M 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical class [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- 229910021591 Copper(I) chloride Inorganic materials 0.000 description 1
- 239000002841 Lewis acid Substances 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical class [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 1
- 239000012736 aqueous medium Substances 0.000 description 1
- 238000000498 ball milling Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000005119 centrifugation Methods 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- OXBLHERUFWYNTN-UHFFFAOYSA-M copper(I) chloride Chemical compound [Cu]Cl OXBLHERUFWYNTN-UHFFFAOYSA-M 0.000 description 1
- 239000012792 core layer Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000003837 high-temperature calcination Methods 0.000 description 1
- 238000001027 hydrothermal synthesis Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000002687 intercalation Effects 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 150000007517 lewis acids Chemical class 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000002135 nanosheet Substances 0.000 description 1
- 239000011255 nonaqueous electrolyte Substances 0.000 description 1
- 238000004321 preservation Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 229910021381 transition metal chloride Inorganic materials 0.000 description 1
- 238000001291 vacuum drying Methods 0.000 description 1
- 238000003828 vacuum filtration Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/90—Carbides
- C01B32/914—Carbides of single elements
- C01B32/921—Titanium carbide
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/90—Carbides
- C01B32/914—Carbides of single elements
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/01—Particle morphology depicted by an image
- C01P2004/03—Particle morphology depicted by an image obtained by SEM
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/10—Energy storage using batteries
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Abstract
The invention discloses a preparation method of Al-doped MXene, and belongs to the technical field of two-dimensional nano materials. In the method, M is firstly n+1 AlX n And with AlCl 3 And (2) calcining a NaCl-KCl molten salt system at a low temperature, carrying out element replacement on the A phase of the MAX to synthesize an excessive Al-doped nano laminar MAX phase, and then etching and extracting the A metal atomic layer in the MAX phase material by a chemical etching method to prepare the two-dimensional laminar nano material MXene. The MXene prepared by the method has obviously improved oxidation resistance, and the problem that the MXene can be quickly oxidized in an aqueous solution is solved.
Description
Technical Field
The invention belongs to the technical field of two-dimensional nano materials, and particularly relates to a preparation method of Al-doped MXene.
Background
With the expansion of the research scope of MXene, research on improving the performance of MXene by exploring new synthesis routes and processing methods to improve the quality of MXene is continuously developing. However, MXene is rapidly oxidized in aqueous solution and is generally stored in aqueous media for no more than a few consecutive weeks. Here we have modified the MAX phase precursor to solve the problem of rapid oxidation of MXene in aqueous solution. In order not to introduce impurities which are not easy to remove, the MAX phase precursor is improved by an aluminum liquid soaking method, and excessive aluminum can cause M with improved stoichiometry and crystallinity n+1 AlX n The MXene prepared by the method has obviously improved oxidation resistance, and the storage time of the aqueous solution of the MXene and the stability of the MXene are prolonged.
Yur of Drisel universityThe y Gogotsi team is entitled "Modified MAX Phase Synthesis for environmental Stable and high purity Conductive Ti 3 C 2 MXene "reports the preparation of Ti containing a small amount of Al impurities by controlling the ratio of TiC, Ti and Al powders 3 AlC 2 Precursor, stable Ti obtained by HF etching 3 C 2 MXene. The literature indicates that in Ti 3 AlC 2 The inclusion of excess aluminium during the synthesis of the MAX phase precursor leads to Ti with improved stoichiometry and crystallinity 3 AlC 2 And (4) generation of crystal grains. And made of modified Ti 3 AlC 2 Produced Ti 3 C 2 The nano-sheet has obviously improved oxidation resistance. In the MAX phase Ti 3 AlC 2 The high-temperature synthesis of (2) is carried out with an excess of aluminum (element a) added to form a liquid phase at an early stage of the sintering process, and the presence of molten metal during the sintering reaction promotes the diffusion of the reactants, resulting in Ti 3 AlC 2 The grains have improved structural order and morphology. Thereby eliminating Ti 3 C 2 Ti caused by defects generated during the synthesis of 3 C 2 High instability in aqueous solutions and air.
The Ningbo material technology of Chinese academy of sciences and the yellow celebration team of engineering research reported that various MXenes can be synthesized by melting a MAX phase and a non-conventional MAX phase precursor of Si, Zn and Ga through a displacement reaction between a MAX phase and a late transition metal halide in an article entitled "A general Lewis acid etching solution for preparing MXenes with enhanced electrochemical performance in non-aqueous electrolyte".
In addition, the Huangqing team discloses an MXene material with Cl as a surface group and a preparation method and application thereof in Chinese patent with application publication No. CN 109437177A, and the key point is to mix a precursor MAX phase material and a transition metal chloride and perform high-temperature reaction to obtain the MXene material with Cl as the surface group.
Shanghai university discloses an i-MAX phase material with a core-shell structure and a preparation method thereof in Chinese patent with application publication number CN 112225221A, and the key point is to select CuCl 2 Salt is used as an etching agent, and the transition metal carbide with a shell layer having a mesoporous structure and a core layer still having an i-MAX phase brand new core-shell structure are obtained by high-temperature calcination.
Thus, the reaction mechanism can be changed in AlCl through a replacement reaction 3 Pair M in molten salt system n+1 AlX n Doping the precursor with Al as an A-site element, and obtaining the MAX phase with excessive aluminum doping by a low-temperature calcination method. Excess aluminum (element a) is added during the calcination process to form a liquid phase at an early stage of the sintering process, and the presence of molten metal during the sintering reaction promotes the diffusion of the reactants, resulting in M n+1 AlX n The grains have improved structural order and morphology. Thus eliminating the defects generated during the synthesis of MXene, which lead to its high instability in aqueous solutions and in air. The AlCl provided by the invention 3 The MXene prepared by the method of doping excessive aluminum in the molten salt system has better oxidation resistance, thereby obviously improving the storage life and the chemical stability of the MXene and providing simplicity for the study of the MXene; in addition, the method has low calcination temperature and controllable process, belongs to a preparation method with low energy consumption, and has strong popularization and application values.
Disclosure of Invention
The invention aims to provide a preparation method of Al-doped MXene. The method of the invention is realized by AlCl in the calcining process 3 The molten salt system improves the MAX phase to obtain M doped with excessive Al n+1 AlX n Phase (1); and obtaining the antioxidant MXene colloidal solution by chemical etching, intercalation and repeated centrifugation.
In order to achieve the purpose, the technical scheme of the invention comprises the following steps:
step 1: m n+1 AlX n And phase with AlCl 3 Fully grinding the mixture of NaCl and KCl, uniformly mixing, filling into an alumina crucible, covering with a graphite foil, and putting into a tube furnace;
step 2: calcining the mixture under an inert atmosphere;
and 3, step 3: cooling to room temperature, grinding the sintered block, and fully washing with HCl until no bubbles escape;
and 4, step 4: filtering with a vacuum filtration device, and repeatedly filtering with deionized water;
and 6: vacuum drying and screening to obtain an excessive Al-doped MAX phase;
and 7: and etching the MAX phase doped with excessive Al, wherein the etching method comprises the following steps.
I, etching MAX phase material by lithium fluoride and hydrochloric acid
Adding the MAX phase material into a mixed solution of lithium fluoride and hydrochloric acid, reacting, taking a precipitate, washing and centrifuging the precipitate alternately until the pH value of a washing solution is more than 6, and drying to obtain the single-layer MXene material.
II, HF etching MAX phase material
Mixing the improved MAX phase raw material with HCl, deionized water and HF mixture, stirring overnight, centrifuging and washing to obtain multilayer deposit, then intercalating in LiCl solution, and repeatedly centrifuging and washing with deionized water to obtain the monolayer MXene material.
III, etching MAX phase material by molten salt method
MAX phase raw materials, chloride ion salts or bromide ion salts, NaCl and KCl are weighed and placed into ball milling equipment to be fully ball-milled and mixed evenly. And then putting the ground powder into an alumina crucible, putting the alumina crucible into a tube furnace, reacting at a high temperature in an inert atmosphere, and cooling. And (3) soaking the reaction product in dilute hydrochloric acid, then ultrasonically cleaning, vibrating and standing, taking a precipitate, and repeatedly centrifugally cleaning and intercalating the precipitate by using deionized water to obtain the single-layer MXene material.
IV, NaOH assisted hydrothermal method for etching MAX phase material
MXene powder with the purity of 92 wt.% is prepared under the hydrothermal action by treating MAX phase raw material with NaOH with a certain concentration.
Preferably, M n+1 AlX n Phase to molten aluminum salt molar ratio of 1: 1-1: 8;
preferably, the calcining temperature is 50-200 ℃, and the heat preservation time is 5-24 h;
preferably, 6-12M HCl is used for washing the sintered blocks, and the washing time is more than 2 h.
Compared with the prior art, the invention has the advantages that:
(1)AlCl 3 the molten salt system enables the calcination temperature during excessive Al doping to be far lower than the temperature reported at present, the calcination temperature used in the invention is not more than 200 ℃, and the temperature of the reported Lewis molten salt is 550-750 ℃;
(2) an excess of aluminium results in M having improved stoichiometry and crystallinity n+1 AlX n The generation of crystal grains eliminates the defects generated in the synthesis process of MXene, a stable MXene colloidal solution is formed, and the improvement of the quality of monolithic MXene leads the MXene film to have higher electronic conductivity;
(3) the prepared MXene has better oxidation resistance, thereby obviously improving the storage life and the chemical stability of the MXene and providing simplicity for the study of the MXene.
Drawings
FIG. 1 shows organ-like excess Al-doped Ti 3 C 2 MXene SEM picture
FIG. 2 shows excessive Al doping of Ti 3 C 2 MXene element distribution diagram including Al, Ti, C and other elements
FIG. 3 is a schematic representation of a cross-sectional view through AlCl 3 Excess Al-doped Ti prepared by molten salt system 3 C 2 MXene and Ti prepared by traditional method 3 C 2 Graph comparing the oxidation degree of MXene in (a) powder and (b) solution in the same time.
Detailed Description
The following describes the substance of the present invention with reference to the examples.
Example 1
In this example, oxidation-resistant Ti was prepared by the following method 3 C 2 MXene:
Ti 3 AlC 2 And with AlCl 3 Fully grinding a mixture of a NaCl-KCl molten salt system, uniformly mixing, filling the mixture into an alumina crucible, covering with a graphite foil, and putting into a tubular furnace; calcining the mixture in Ar atmosphere at the calcining temperature of 150 ℃ for 10 h; cooling to room temperature, grinding the sintered block to obtain Al-Ti 3 AlC 2 Powder; washing with 9M HCl until no more bubbles remainedUntil escaping; repeatedly filtering the excessive Al-doped Ti by using a filter membrane with the aperture of 5 mu m 3 AlC 2 And a HCl mixture; then drying in a vacuum oven; sieving with 400 mesh sieve to obtain Ti doped with excessive Al 3 AlC 2 And (4) phase(s). Adding MAX phase material into mixed solution of lithium fluoride and hydrochloric acid, reacting, taking precipitate, washing and centrifuging the precipitate alternately until pH of washing solution is more than 6, and drying to obtain antioxidant Ti 3 C 2 MXene materials.
Example 2
In this example, oxidation-resistant Ti was prepared by the following method 2 C MXene:
Ti 2 AlC phase and AlCl 3 Fully grinding a mixture of a NaCl-KCl molten salt system, uniformly mixing, filling the mixture into an alumina crucible, covering with a graphite foil, and putting into a tubular furnace; calcining the mixture in Ar atmosphere at the calcining temperature of 130 ℃ for 12 h; cooling to room temperature, grinding the sintered block to obtain Al-Ti 2 AlC powder; washing with 9M HCl until no more bubbles escape; repeatedly filtering the excessive Al-doped Ti by using a filter membrane with the aperture of 5 mu m 2 AlC and HCl mixtures; then drying in a vacuum oven; sieving with 400 mesh sieve to obtain Ti doped with excessive Al 2 An AlC phase. Adding MAX phase material into mixed solution of lithium fluoride and hydrochloric acid, taking precipitate after reaction, washing and centrifuging the precipitate alternately until the pH value of washing liquid is more than 6, and drying to obtain antioxidant Ti 2 CMXene material.
Example 3
In this example, oxidation-resistant V was prepared by the following method 2 C MXene:
V 2 AlC and AlCl 3 Fully grinding a mixture of a NaCl-KCl molten salt system, uniformly mixing, filling the mixture into an alumina crucible, covering with a graphite foil, and putting into a tubular furnace; calcining the mixture in Ar atmosphere at the calcining temperature of 150 ℃ for 12 h; cooling to room temperature, grinding the sintered cake to obtain Al-V 2 AlC powder; washing with 9M HCl until no more bubbles escapeUntil the end is reached; repeatedly filtering the excessive Al-doped V by using a filter membrane with the aperture of 5 mu m 2 AlC and HCl mixtures; then drying in a vacuum oven; sieving with 400 mesh sieve to obtain V doped with excessive Al 2 An AlC phase. Adding MAX phase material into mixed solution of lithium fluoride and hydrochloric acid, reacting, taking precipitate, washing and centrifuging the precipitate alternately until pH of washing solution is more than 6, and drying to obtain antioxidant V 2 CMXene material.
The above-mentioned contents are only for illustrating the technical idea of the present invention, and the protection scope of the present invention is not limited thereby, and any modification made on the basis of the technical idea of the present invention falls within the protection scope of the claims of the present invention.
Claims (6)
1. The preparation method of Al-doped MXene is characterized by comprising the following steps of n+1 AlX n Precursors and AlCl 3 Molten salt system of said AlCl 3 The molten salt system is AlCl 3 NaCl-KCl, the MAX phase comprises M with Al as the A-site element n+1 AlX n Precursor, said excess Al being in the pure phase M n+1 AlX n A small amount of impurity aluminum (namely, A site element) is introduced.
2. The method of claim 1, wherein M is n+1 AlX n Comprising Ti 3 AlC 2 、Ti 2 AlC、V 2 AlC、Nb 2 AlC、Cr 2 Any one or a combination of two or more of alcs.
3. The method of claim 1, comprising:
the M is added n+1 AlX n Precursors and said AlCl 3 Mixing the molten salt system uniformly;
calcining the obtained product in the step (1) in a tubular furnace, washing with HCl, drying and screening to obtain the excessive Al-doped MAX phase;
and (3) carrying out lamellar separation on the step (2) by a chemical etching method to obtain a single-lamellar MXene colloidal solution.
4. The method of claim 3, wherein M is present in step (1) n+1 AlX n The molar ratio of precursor to aluminum molten salt system is 1: 1-1: 8.
5. the method of claim 3, wherein the calcining at 50-200 ℃ in step (2) is carried out for 5-24 h.
6. The use of the anti-oxidation MXene material and its composite material prepared by etching according to any one of claims 1-5 in wave-absorbing or electromagnetic shielding or conductive materials or biomaterials.
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
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CN114956085A (en) * | 2021-02-26 | 2022-08-30 | 苏州北科纳米科技有限公司 | Method for preparing antioxidant MXene through low-temperature molten salt system |
CN115504474A (en) * | 2022-11-03 | 2022-12-23 | 滁州学院 | Preparation of oxygen-doped O-Ti 3 C 2 T x Method for two-dimensional material |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20170088429A1 (en) * | 2015-09-24 | 2017-03-30 | Samsung Electronics Co., Ltd. | Mxene nanosheet and manufacturing method thereof |
CN111634914A (en) * | 2020-06-12 | 2020-09-08 | 陕西科技大学 | Preparation method of M-site vanadium-doped MXene |
US20200399771A1 (en) * | 2019-06-24 | 2020-12-24 | The Hong Kong Polytechnic University | Method for hf-free facile and rapid synthesis of mxenes related compounds |
US20200407281A1 (en) * | 2018-07-10 | 2020-12-31 | Ningbo Institute Of Materials Technology & Engineering, Chinese Academy Of Sciences | Max phase material, preparation method therefor and application thereof |
CN112159605A (en) * | 2020-09-09 | 2021-01-01 | 苏州北科纳米科技有限公司 | Method for preparing mxene material based on molten salt growth method and application |
CN112194135A (en) * | 2020-10-21 | 2021-01-08 | 四川大学 | Method for preparing MXenes material from molten salt |
CN112225221A (en) * | 2020-06-05 | 2021-01-15 | 上海大学 | I-MAX phase material with core-shell structure and preparation method thereof |
CN112316157A (en) * | 2020-11-12 | 2021-02-05 | 苏州北科纳米科技有限公司 | Preparation method and application of antioxidant MXenes material |
CN114956085A (en) * | 2021-02-26 | 2022-08-30 | 苏州北科纳米科技有限公司 | Method for preparing antioxidant MXene through low-temperature molten salt system |
-
2021
- 2021-02-26 CN CN202110215742.6A patent/CN114956084A/en active Pending
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20170088429A1 (en) * | 2015-09-24 | 2017-03-30 | Samsung Electronics Co., Ltd. | Mxene nanosheet and manufacturing method thereof |
US20200407281A1 (en) * | 2018-07-10 | 2020-12-31 | Ningbo Institute Of Materials Technology & Engineering, Chinese Academy Of Sciences | Max phase material, preparation method therefor and application thereof |
US20200399771A1 (en) * | 2019-06-24 | 2020-12-24 | The Hong Kong Polytechnic University | Method for hf-free facile and rapid synthesis of mxenes related compounds |
CN112225221A (en) * | 2020-06-05 | 2021-01-15 | 上海大学 | I-MAX phase material with core-shell structure and preparation method thereof |
CN111634914A (en) * | 2020-06-12 | 2020-09-08 | 陕西科技大学 | Preparation method of M-site vanadium-doped MXene |
CN112159605A (en) * | 2020-09-09 | 2021-01-01 | 苏州北科纳米科技有限公司 | Method for preparing mxene material based on molten salt growth method and application |
CN112194135A (en) * | 2020-10-21 | 2021-01-08 | 四川大学 | Method for preparing MXenes material from molten salt |
CN112316157A (en) * | 2020-11-12 | 2021-02-05 | 苏州北科纳米科技有限公司 | Preparation method and application of antioxidant MXenes material |
CN114956085A (en) * | 2021-02-26 | 2022-08-30 | 苏州北科纳米科技有限公司 | Method for preparing antioxidant MXene through low-temperature molten salt system |
Cited By (2)
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CN114956085A (en) * | 2021-02-26 | 2022-08-30 | 苏州北科纳米科技有限公司 | Method for preparing antioxidant MXene through low-temperature molten salt system |
CN115504474A (en) * | 2022-11-03 | 2022-12-23 | 滁州学院 | Preparation of oxygen-doped O-Ti 3 C 2 T x Method for two-dimensional material |
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