CN114951964B - Focus determination device and focus determination method suitable for low-medium-high power laser - Google Patents
Focus determination device and focus determination method suitable for low-medium-high power laser Download PDFInfo
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- CN114951964B CN114951964B CN202210777385.7A CN202210777385A CN114951964B CN 114951964 B CN114951964 B CN 114951964B CN 202210777385 A CN202210777385 A CN 202210777385A CN 114951964 B CN114951964 B CN 114951964B
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- 239000004065 semiconductor Substances 0.000 claims abstract description 71
- 230000005855 radiation Effects 0.000 claims abstract description 27
- 238000002834 transmittance Methods 0.000 claims abstract description 27
- 239000002184 metal Substances 0.000 claims abstract description 11
- 239000013077 target material Substances 0.000 claims abstract description 4
- 238000012545 processing Methods 0.000 claims description 14
- 238000011282 treatment Methods 0.000 claims description 4
- 239000000463 material Substances 0.000 description 9
- 238000010586 diagram Methods 0.000 description 8
- 238000002679 ablation Methods 0.000 description 4
- 229910002704 AlGaN Inorganic materials 0.000 description 3
- 238000000608 laser ablation Methods 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 240000005528 Arctium lappa Species 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000010963 304 stainless steel Substances 0.000 description 1
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- 230000009286 beneficial effect Effects 0.000 description 1
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- 230000031700 light absorption Effects 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/362—Laser etching
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/70—Auxiliary operations or equipment
- B23K26/702—Auxiliary equipment
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention discloses a focus judging device suitable for low-medium-high power laser, which comprises a wide band gap semiconductor detector array frame, wherein a laser head is arranged at the center of the wide band gap semiconductor detector array frame, and a laser light outlet at the bottom of the laser head emits laser to ablate a metal target material placed above a working platform to generate a plasma ultraviolet radiation signal; the wide band gap semiconductor detector array frame is also provided with a plurality of wide band gap semiconductor detector modules with different light transmittance. The invention also discloses a fixed focus method suitable for the low-medium-high power laser, and solves the problem that the prior equipment cannot realize a large dynamic response range when determining the focus position of the power laser.
Description
Technical Field
The invention belongs to the technical field of laser processing, relates to a focus judgment device suitable for low-medium-high power laser, and also relates to a focusing method of the focusing device.
Background
In recent years, power lasers have been widely used in the special processing industry by virtue of their various excellent properties. Along with the development of society, the precision requirement of laser processing is also higher and higher in industry, and the laser processing precision has close relation with the relative distance from the laser focus to the surface of the processed object, so that the accurate measurement (short for "focusing") of the power laser focus position is a key technology. It should be noted that, the "focal point" referred to in the present invention, more precisely, the optimal ablation position point of the laser for the processed material, refers to a position apart from the laser head, which has the optimal ablation depth and effect, and is not a focal point in a pure optical sense.
The traditional power laser focus measurement method comprises the following steps: the CCD or CMOS based beam quality analysis method is not suitable for high power lasers; the probe method has the disadvantages of expensive material consumption and complicated operation; the visual observation method is liable to damage eyes and is not suitable for medium-high power lasers (here, it is considered that lasers with an average power of 10W or less are low power lasers, 10W to 1000W are medium power lasers, and more than 1000W are high power lasers). The method has high cost and inconvenient operation when measuring the focus of the high-power laser, cannot realize a large dynamic response range, and is difficult to accurately determine the focus of the high-power laser.
Disclosure of Invention
The invention aims to provide a focus judgment device suitable for low-medium-high power laser, and the focus judgment device solves the problem that the prior equipment cannot realize a large dynamic response range when determining the focus position of the power laser.
Another object of the present invention is to provide a method of focusing suitable for low, medium and high power lasers.
The first technical scheme adopted by the invention is that the focus judging device suitable for low, medium and high power lasers comprises a wide band gap semiconductor detector array frame, a laser head is arranged at the center of the wide band gap semiconductor detector array frame, and a laser light outlet at the bottom of the laser head emits laser to ablate a metal target material placed above a working platform to generate a plasma ultraviolet radiation signal; the wide band gap semiconductor detector array frame is also provided with a plurality of wide band gap semiconductor detector modules with different light transmittance.
The first technical scheme of the invention is characterized in that:
the wide-band gap semiconductor detector array frame comprises an array frame front frame body and an array frame back frame body, wherein a plurality of wide-band gap semiconductor detector modules with different light transmittance are uniformly distributed on the array frame front frame body; MCU and loudspeaker are installed on the back frame body of the array frame respectively.
Each wide band gap semiconductor detector module comprises two PCB circuit boards which are arranged in parallel, each PCB circuit board is provided with a wide band gap semiconductor sensor, and a light shielding sheet with zero light transmittance is arranged above the first wide band gap semiconductor sensor to perform full light shielding treatment; a light shielding process with different light transmittance is performed above the second wide bandgap semiconductor sensor.
The second wide bandgap semiconductor sensor is provided with a non-mounted light shielding sheet and a mounted light shielding rate of~/>Is used for shading the shading sheet.
The second technical scheme adopted by the invention is a fixed focus method suitable for low, medium and high power lasers, which comprises the following steps:
step 1, adjusting the position of a laser head until the lower edges of a processing platform and the laser head exceed F, and setting an allowable error range Err in a fixed focus process;
step 2, starting a laser, and enabling a laser head to emit laser beams through a laser light outlet to ablate a metal target on a processing platform so as to generate a plasma ultraviolet radiation signal;
step3, starting a prime device, and collecting plasma ultraviolet radiation signals by a wide forbidden band semiconductor detector array frame;
Step 4, performing traversal process, and finding out the value of Lmax as a focus judgment basis;
step 5, beginning to find focus, and using loudspeaker to make Frequency of/10/>Tone ringing of magnitude of/10, the user manually adjusts the position of the laser upward, speaker during movement/>X p frequency/>Tone ringing with the size of x p is used for prompting the distance between the current point and the focal position until the loudspeaker rings at the target frequency and decibels, and the condition that the |Lnow-Lmax| is less than or equal to Err is indicated, and the condition that the focal position is reached currently is indicated;
and 6, finishing the fixed focus, and closing the fixed focus device.
The invention has the beneficial effects that the invention provides the accurate focusing device of the power laser, which responds to the ultraviolet component of the plasma radiation generated by laser ablation of metal by utilizing the solar blind and visible light blind characteristics of the ultraviolet photoelectric sensor manufactured by the wide forbidden band semiconductor material, outputs the acquired signal in digital quantity through the transimpedance amplifying circuit and the A/D conversion module, stores and calculates the plasma radiation intensity value in the MCU, and achieves the aim of accurate focusing according to the relation between the intensity value and the defocusing quantity; in addition, the hearing is used for replacing vision to judge whether the laser is at the focus through the sound change of the loudspeaker, so that naked eyes do not need to directly look at the laser ablation position, and the use safety of the laser is improved; meanwhile, a plurality of wide-bandgap semiconductor material detectors are used for jointly forming a detector array frame, so that the detector array frame is suitable for judging the focus of low-medium-high-power laser and achieves the effect of large dynamic response range.
Drawings
FIG. 1 is a schematic view of the present invention when a focus judgment device for low, medium and high power laser is used for processing;
FIG. 2 is a schematic front view of an array frame in the focus judgment device applicable to low, medium and high power lasers;
FIG. 3 is a schematic view of the back of an array frame in the focus judgment device suitable for low, medium and high power lasers according to the present invention;
FIG. 4 is a schematic diagram of a wide bandgap semiconductor material detector module of the present invention suitable for use in a focus decision device for low, medium and high power lasers;
FIG. 5 shows that the light transmittance of the focus judgment device (without the light shielding sheet) applied to the low-medium-high power laser of the present invention is A schematic diagram of a detector module of (a);
FIG. 6 shows that the light transmittance in the focus judgment device suitable for low, medium and high power laser according to the present invention is Is a schematic diagram of a detector module;
FIG. 7 shows that the light transmittance in the focus judgment device suitable for low, medium and high power laser according to the present invention is Is a schematic diagram of a detector module;
FIG. 8 is a schematic diagram of the Rayleigh length of a laser in the focus determination device of the present invention suitable for low, medium and high power lasers;
FIG. 9 is a flow chart of the "walk through" process of the focus determination device of the present invention for low, medium and high power lasers;
FIG. 10 is a flow chart of the focusing process of the focus judgment device suitable for low, medium and high power laser;
FIG. 11 is a graph showing the test results of a detector without a light shielding sheet and a detector with a light shielding sheet.
In the figure, 1 part of laser head, 2 parts of wide bandgap semiconductor detector array frame, 3 parts of laser light outlet, 4 parts of plasma ultraviolet radiation signal, 5 parts of metal target material, 6 parts of working platform, 7 parts of array frame front frame body, 8 parts of wide bandgap semiconductor detector module I,9 parts of wide bandgap semiconductor detector module II,10 parts of wide bandgap semiconductor detector module III,11 parts of hollow square hole, 12 parts of array frame back frame body, 13 parts of MCU,14 parts of loudspeaker, 15 parts of PCB circuit board, 16 parts of wide bandgap semiconductor sensor, 17 parts of light shielding sheet with zero light transmittance and 18 parts of light transmittance are shownIs a light shielding sheet of 19. Light transmittance is/>The laser beam is characterized by comprising a shading sheet 20, a laser focus 21 and a target to be processed.
Detailed Description
The invention will be described in detail below with reference to the drawings and the detailed description.
The invention is suitable for the focus judging device of the low-medium high-power laser, as shown in figure 1, the wide forbidden band semiconductor detector array frame 2 is nested on the laser head 1 through the hollow square hole 11 in the middle, the laser light outlet 3 below the laser head 1 sends out laser to ablate the metal target 5 placed above the working platform 6 to generate the plasma ultraviolet radiation signal 4;
the front mounting light transmittance of the wide forbidden band semiconductor detector array frame 2 is respectively from large to small ……Wherein the central axis of each wide bandgap semiconductor (AlGaN) detector module is coaxial with the wide bandgap semiconductor detector array frame 2, and the distances from each wide bandgap semiconductor detector module to the center of the wide bandgap semiconductor detector array frame 2 are equal, and the wide bandgap semiconductor detector array frames 2 are distributed in a central symmetry manner (as shown in fig. 2, only three are schematically drawn).
As shown in fig. 2 and 3, the wide bandgap semiconductor detector array frame 2 comprises an array frame front frame body 7 and an array frame back frame body 12;
The three wide bandgap semiconductor detector modules in fig. 2 are respectively: a wide bandgap semiconductor detector module I8 without a light shielding sheet is provided with a light transmittance of The wide bandgap semiconductor detector module II9 of the light shielding sheet is provided with a light transmittance ofThe three wide bandgap semiconductor detectors are connected through a bus and are arranged on the front frame body 7 of the wide bandgap semiconductor detector array frame;
An MCU (Micro Control Unit ) 13 and a loudspeaker 14 are respectively arranged on the back frame body 12 of the array frame, and the MCU13 and the loudspeaker 14 are arranged on the back frame body 12 of the array frame through bus connection.
Fig. 4 is a schematic top view of a wide bandgap semiconductor detector module, including two PCB circuit boards 15 arranged in parallel, wherein a transimpedance amplifier and an a/D conversion circuit are integrated on each PCB circuit board 15, a wide bandgap semiconductor sensor 16 is mounted on each PCB circuit board 15, and a light shielding sheet 17 with zero light transmittance is mounted above one of the wide bandgap semiconductor sensors 16 for full light shielding treatment;
FIG. 5 is a schematic diagram of a wide bandgap semiconductor detector module without a light shielding sheet (transmittance is Shading sheet thickness/>=0），
FIG. 6 is a graph with a light transmittance ofSchematic diagram of a wide bandgap semiconductor detector module of the gobo 18 (transmittance is/>The thickness of the light shielding sheet 18 is/>），
FIG. 7 is a graph with a light transmittance ofSchematic diagram of a wide bandgap semiconductor detector module of the gobo 19 (transmittance is/>The thickness of the light shielding sheet 19 is/>）。
The thickness of the shading sheet is obtained according to the light absorption formula:
（1）
For the incident light intensity incident on the surface of the shading sheet,/> For the light intensity emitted from the other surface of the light shielding sheet after being absorbed by the light shielding sheet,/>Is the absorption coefficient of the shading sheet material,/>Is the thickness of the material.
The light transmittance obtained by the above relation is:
（2）
The push-out thickness is:
（3）
Therefore, it is desired to obtain a transmittance of ……/>The shading sheet is only substituted into the formula to obtain the thickness of the material.
As shown in FIG. 8, the laser rayleigh length is schematically shown in the range of rayleigh length according to the laser parameters,/>The intra-and intra-site laser beam can be considered approximately as a parallel beam (/ >)Being the Rayleigh length upper bound, -/>As a lower rayleigh range), the fixed focus accuracy can be considered to satisfy the laser focus determination, i.e., the allowable error range err=/>, as long as the measurement accuracy of the laser focus 20 is within its rayleigh length(/>For the plasma ultraviolet radiation signal at the lower boundary of the Rayleigh length,/>Is the plasma ultraviolet radiation signal at the rayleigh length upper bound).
The working principle is as follows:
Before focusing, manually adjusting the laser head 1 upwards to enable the lower edge of the laser head 1 to be separated from the metal target 5 by more than F (the theoretical focal length of the laser manufacturer is more than 3 cm), then manually adjusting the laser head 1 downwards to enable the laser focus 20 to be overlapped with the surface of the target 21 to be processed from too large distance to too large distance (hereinafter referred to as 'traversing'), wherein the light transmittance of the wide-band gap semiconductor detector array frame 2 is respectively as follows ……/>The wide bandgap semiconductor detector of (2) collects the plasma ultraviolet radiation signal 4 to find the plasma ultraviolet radiation signal maximum value Lmax.
The traversal process flow chart is shown in fig. 9 (where N is the number of installed wide bandgap semiconductor detector modules and S is the saturation value of the wide bandgap semiconductor detector modules). After the traversal process starts, storing the value of N into M, wherein N is set to be 1, and the acquired result of the first wide bandgap semiconductor detector is used as a plasma ultraviolet radiation signal value after initialization, so that Lmax=0 is initialized; judging the acquisition result of the current wide bandgap semiconductor detector module in the traversal processWhether or not to saturate (i.e. judgeWhether or not it is true); if saturation occurs, the next wide bandgap semiconductor detector module is gated and whether n > M is satisfied is judged, if so, the last wide bandgap semiconductor detector module is indicated to be the last wide bandgap semiconductor detector module, the process is directly ended, and if not, the process returns to continue judging/>Whether or not to establish; if unsaturated will/>Storing the value of Lnow plasma ultraviolet radiation signal value Lnow, then judging whether Lnow is larger than the maximum value Lmax, if Lnow > Lmax, storing the value of Lnow into Lmax and then returning to continue judging/>Whether or not it is. If Lnow > Lmax is not satisfied, directly returning to judge/>Whether or not it is. And outputting Lmax after the traversal process is finished as a focus judgment basis of the following focus searching process.
The process flow chart of the fixed focus is shown in figure 10, and after the fixed focus is started, a loudspeaker is arranged for/10 （/>) Frequency of/>10 (Decibel/>)) A tone chirp of the magnitude of (2) indicates that focus is beginning to be found. Storing the value of N into M, setting N as1, and judging the acquisition result/>, of the current wide bandgap semiconductor detector moduleWhether or not it is saturated (i.e. judging/>)Whether or not it is true); if saturation occurs, the next wide bandgap semiconductor detector module is gated and whether n > M is satisfied is judged, if so, the last wide bandgap semiconductor detector module is indicated to be the last wide bandgap semiconductor detector module, the process is directly ended, and if not, the process returns to continue judging/>Whether or not to establish; if unsaturated will/>Storing the value of (2) in the current plasma ultraviolet radiation signal value Lnow, calculating the ratio of Lnow to Lmax, and storing the ratio in P; continuously judging whether the |Lnow-Lmax| is smaller than or equal to Err or not (namely, whether the error range is within); if yes, the fixed focus is finished, and the frequency of the loudspeaker is set to be/>Size is/>Then ending the prime process; if not, the speaker frequency is/>Size is/>And return to continue judging/>Whether or not it is.
The application method of the power laser accurate focusing device comprises the following steps:
step1, manually adjusting the position of the laser head 1 until the lower edges of the processing platform 6 and the laser head 1 exceed an error range Err allowed in the setting and focusing process of F (an ideal focal length of 3cm given by a laser manufacturer),
And 2, starting a laser, and emitting a laser beam to ablate a metal target 5 on a processing platform 6 by a laser head 1 through a laser light outlet 3 to generate a plasma ultraviolet radiation signal 4.
And 3, starting a focusing device, and collecting a plasma ultraviolet radiation signal 5 by the wide bandgap semiconductor detector array frame 2.
And 4, performing traversal process, and finding out the value of Lmax as a focus judgment basis.
Step 5, beginning to find focus, and using loudspeaker to makeFrequency of/10/>Tone ringing of magnitude of/10, manual upward adjustment of the position of the laser 1 by the user, speaker during movement/>X p frequency/>Tone ringing of x p size (where p=/>)) For prompting the distance of the current point from the focal position until the frequency of the loudspeakerSize/>And (3) ringing, wherein the instruction of |Lnow-Lmax| is less than or equal to Err, and the instruction indicates that the focus position is reached currently.
And 6, finishing the fixed focus, and closing the fixed focus device.
Examples
A GSS-FIB-20 laser head is selected, the laser wavelength is 1064nm, the beam quality M 2 <2, the minimum linewidth is 0.01mm, the optical average power of the laser head is set to be 20W, the repeated working frequency is 20kHz, each time laser pulse is output for continuous processing, the ablation trace is determined according to the processing requirement of a processing material, the test ablation trace is a straight line, and the plasma radiation intensity generated by laser ablation can be ensured to reach the threshold value of the signal acquired by a sensor; two wide band gap AlGaN detectors are arranged on the detector array frame, one is not provided with a light shielding sheet, and the other is provided with a light shielding sheet with the thickness w=3.9mm. The wide band gap AlGaN ultraviolet photodiode of the system adopts LTPL-G35UVSRH type photodiodes, the signal amplifier adopts a semiconductor chip LMV358, the ADC module adopts a TM7705 chip, the MCU adopts STM32F407ZGT6, and the metal target adopts a 304 stainless steel plate with smooth surface.
The device is started, the laser head position is adjusted to a higher position, then the focusing device is opened, the laser head position is manually adjusted downwards, ultraviolet radiation signals in the whole process are traversed, and the maximum value of the ultraviolet signals is found. And manually adjusting the position of the laser head upwards to start focusing until the loudspeaker sounds long, and indicating that the laser focus position is reached. Closing the device.
In order to prove that the focus judgment device suitable for low-power, medium-power and high-power laser is accurate and effective, a detector module without the light shielding sheet and a detector module with the light shielding sheet with the thickness of w=3.9mm are subjected to actual test, and the result is shown in fig. 11, which shows that the light shielding sheet can solve the problem of saturation of detector data, and further a large dynamic response range is realized.
Claims (2)
1. A focus decision device suitable for low-medium high power laser is characterized in that: the laser head is arranged at the center of the wide band gap semiconductor detector array frame, and a laser light outlet at the bottom of the laser head emits laser to ablate a metal target material placed above a working platform to generate a plasma ultraviolet radiation signal; the wide band gap semiconductor detector array frame is also provided with a plurality of wide band gap semiconductor detector modules with different light transmittance;
The wide-band gap semiconductor detector array frame comprises an array frame front frame body and an array frame back frame body, wherein a plurality of wide-band gap semiconductor detector modules with different light transmittance are uniformly distributed on the array frame front frame body; the MCU and the loudspeaker are respectively arranged on the frame body at the back of the array frame;
Each wide band gap semiconductor detector module comprises two PCB circuit boards which are arranged in parallel, each PCB circuit board is provided with a wide band gap semiconductor sensor, and a light shielding sheet with zero light transmittance is arranged above the first wide band gap semiconductor sensor to perform full light shielding treatment; shading treatments with different light transmittance are carried out above the second wide bandgap semiconductor sensor;
the second wide forbidden band semiconductor sensor is respectively provided with an uninstalled shading sheet and an installed shading rate of ~/>Is used for shading the shading sheet.
2. A method for laser focusing by using a focus judgment device suitable for low-medium high-power laser according to claim 1, which is characterized by comprising the following steps:
Step 1, adjusting the position of a laser head to enable the lower edges of a processing platform and the laser head to exceed F, and setting an allowable error range Err in a fixed focus process;
step 2, starting a laser, and enabling a laser head to emit laser beams through a laser light outlet to ablate a metal target on a processing platform so as to generate a plasma ultraviolet radiation signal;
step3, starting a prime device, and collecting plasma ultraviolet radiation signals by a wide forbidden band semiconductor detector array frame;
Step 4, performing traversal, namely acquiring a plasma ultraviolet radiation signal by using a wide band gap semiconductor detector arranged on a wide band gap semiconductor detector array frame to find a maximum value Lmax of the plasma ultraviolet radiation signal, and taking the value Lmax as a focus judgment basis;
Step 5, beginning to find focus, and using loudspeaker to make Frequency of/10/>Tone ringing of magnitude of/10, the user manually adjusts the position of the laser upward, speaker during movement/>X p frequency/>Tone ringing with the size of x p is used for prompting the distance between the current point and the focal position until the loudspeaker rings at the target frequency and decibels, and the condition that the |Lnow-Lmax| is less than or equal to Err is indicated, and the condition that the focal position is reached currently is indicated; lnow is the current plasma ultraviolet radiation signal value, and p is the ratio of the current plasma ultraviolet radiation signal value Lnow to the maximum value Lmax of the plasma ultraviolet radiation signal;
and 6, finishing the fixed focus, and closing the fixed focus device.
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Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4472055A (en) * | 1980-09-02 | 1984-09-18 | Amada Company, Limited | Method and apparatus for detecting the focusing position in a laser machining apparatus |
| JP2011060902A (en) * | 2009-09-08 | 2011-03-24 | Sony Corp | Measuring instrument and method, and program |
| WO2012041351A1 (en) * | 2010-09-30 | 2012-04-05 | Wavelight Gmbh | Device and method for processing material by means of focused electromagnetic radiation |
| EP2606863A1 (en) * | 2011-12-22 | 2013-06-26 | Ziemer Ophthalmic Systems AG | Device and method to determine the focus position of a laser beam |
| CN104748674A (en) * | 2013-12-27 | 2015-07-01 | 上海微电子装备有限公司 | Focus monitoring device and method |
| CN110238547A (en) * | 2019-05-09 | 2019-09-17 | 西安理工大学 | It is a kind of for measuring the system and measurement method of high power laser focal position |
| KR20190129214A (en) * | 2018-05-10 | 2019-11-20 | 윈포시스(주) | Focus measurement apparatus and focus measurement method using the same |
| DE102019003528A1 (en) * | 2018-05-18 | 2019-11-21 | MV Innovative Technologies, LLC | ADDITIVE MANUFACTURING OF METALS USING A FIBER ARRAYLASER SOURCE AND ADAPTIVE MULTIPLE RAY MOLDING |
| WO2020035537A1 (en) * | 2018-08-16 | 2020-02-20 | Dittmar Guenter | Method for monitoring material processing process of a workpiece with a laser beam, and apparatus |
| CN111989552A (en) * | 2018-03-08 | 2020-11-24 | 普雷茨特两合公司 | Device for determining a focal position in a laser processing system, laser processing system having such a device, and method for determining a focal position in a laser processing system |
| CN112935530A (en) * | 2021-04-25 | 2021-06-11 | 山东大学深圳研究院 | Method and device for determining pulse laser focus position |
| CN112935529A (en) * | 2021-03-31 | 2021-06-11 | 西安理工大学 | Device and method for laser precision machining |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11243114B2 (en) * | 2018-09-17 | 2022-02-08 | Trumpf Lasersystems For Semiconductor Manufacturing Gmbh | Method for determining at least one beam propagation parameter of a laser beam |
-
2022
- 2022-07-04 CN CN202210777385.7A patent/CN114951964B/en active Active
Patent Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4472055A (en) * | 1980-09-02 | 1984-09-18 | Amada Company, Limited | Method and apparatus for detecting the focusing position in a laser machining apparatus |
| JP2011060902A (en) * | 2009-09-08 | 2011-03-24 | Sony Corp | Measuring instrument and method, and program |
| WO2012041351A1 (en) * | 2010-09-30 | 2012-04-05 | Wavelight Gmbh | Device and method for processing material by means of focused electromagnetic radiation |
| EP2606863A1 (en) * | 2011-12-22 | 2013-06-26 | Ziemer Ophthalmic Systems AG | Device and method to determine the focus position of a laser beam |
| CN104748674A (en) * | 2013-12-27 | 2015-07-01 | 上海微电子装备有限公司 | Focus monitoring device and method |
| CN111989552A (en) * | 2018-03-08 | 2020-11-24 | 普雷茨特两合公司 | Device for determining a focal position in a laser processing system, laser processing system having such a device, and method for determining a focal position in a laser processing system |
| KR20190129214A (en) * | 2018-05-10 | 2019-11-20 | 윈포시스(주) | Focus measurement apparatus and focus measurement method using the same |
| DE102019003528A1 (en) * | 2018-05-18 | 2019-11-21 | MV Innovative Technologies, LLC | ADDITIVE MANUFACTURING OF METALS USING A FIBER ARRAYLASER SOURCE AND ADAPTIVE MULTIPLE RAY MOLDING |
| WO2020035537A1 (en) * | 2018-08-16 | 2020-02-20 | Dittmar Guenter | Method for monitoring material processing process of a workpiece with a laser beam, and apparatus |
| CN110238547A (en) * | 2019-05-09 | 2019-09-17 | 西安理工大学 | It is a kind of for measuring the system and measurement method of high power laser focal position |
| CN112935529A (en) * | 2021-03-31 | 2021-06-11 | 西安理工大学 | Device and method for laser precision machining |
| CN112935530A (en) * | 2021-04-25 | 2021-06-11 | 山东大学深圳研究院 | Method and device for determining pulse laser focus position |
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