CN114927596B - MXene/n-Ge high-speed broadband self-powered photoelectric detector manufacturing method and detector - Google Patents
MXene/n-Ge high-speed broadband self-powered photoelectric detector manufacturing method and detector Download PDFInfo
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Abstract
The invention discloses a manufacturing method of an MXene/n-Ge high-speed broadband self-powered photoelectric detector, which comprises the steps of obtaining Ti 3C2Tx colloid solution and an n-Ge substrate doped with Sb, removing impurities on the surface of the n-Ge substrate, covering the n-Ge substrate with the Ti 3C2Tx colloid solution, drying the n-Ge substrate to constant weight at room temperature, and forming a Ti 3C2Tx film layer to enable the Ti 3C2Tx film layer and the n-Ge substrate to form a Schottky heterojunction. The invention also discloses the MXene/n-Ge high-speed broadband self-powered photoelectric detector prepared by the method, which has the advantages of simple structure, stable operation, good detection effect, extremely fast response time, high precision and reliability, small volume, light weight, easiness in manufacturing of the sensor and low cost.
Description
Technical Field
The invention relates to the technical field of sensors, in particular to a manufacturing method of an MXene/n-Ge high-speed broadband self-powered photoelectric detector and the detector.
Background
MXene is a two-dimensional transition metal carbide, nitride or carbonitride, and is prepared by an acidic aqueous solution etching method. As a novel chemically stable, environment-friendly two-dimensional material, it has been reported by 2011 that it has attracted extensive attention from the scientific community. MXene has the chemical formula M n+1XnTx (n=1, 2, 3), M is a transition metal element (Ti, nb, mo, V, etc.), X is a C, N or CN element, and T x represents a MXene surface-derived functional group (-OH, =o, -F). The synthesis methods reported at present mainly comprise an aqueous solution etching method, a molten salt etching method, a chemical vapor deposition method (CVD), an electrochemical etching method, a salt solution acoustical synthesis method and the like. The MXene has wide application in the field of photoelectric devices due to the characteristics of rich functional groups on the surface of the MXene, large specific surface area, excellent light transmittance, high conductivity, adjustable work function and the like. Such as lithium ion batteries, supercapacitors, light emitting diodes, electromagnetic shielding, photodetectors, and the like.
The photodetector is one of electronic devices capable of converting an optical signal into an electrical signal, and the photodetector operating in different wavebands is widely used in the fields of thermal imaging, automatic control, image sensing, communication, and the like. Since the first discovery of two-dimensional materials such as graphene, the combination of novel two-dimensional materials with other semiconductor materials to form van der Waals heterojunction exhibits excellent photodetection properties has attracted considerable interest from a large number of researchers. To date, there have been few reports on the preparation of photodetectors by combining MXene with conventional semiconductors, and there are some methods of combining MXene with GaN to form MXene/GaN photodetectors by spray coating, which achieve a responsivity of 284mA/W under 355nm light with rise and fall times of 7.55 μs and 1.67ms. However, the device cannot absorb light in a broadband mode due to the wide bandgap characteristic of GaN, and the device is prepared by adopting a spraying method, so that the cost is high, the process is complex, and the response speed of the device is low.
Disclosure of Invention
Aiming at the defects in the prior art, the invention aims to solve the technical problems that: how to provide a manufacturing method which is easy to manufacture, and the manufactured photoelectric detector is suitable for the MXene/n-Ge high-speed broadband self-powered photoelectric detector with multi-section spectral response and quick response time.
In order to solve the technical problems, the invention adopts the following technical scheme:
a manufacturing method of an MXene/n-Ge high-speed broadband self-powered photoelectric detector comprises the following steps:
And (3) obtaining a Ti 3C2Tx colloid solution and an n-Ge substrate doped with Sb, removing impurities on the surface of the n-Ge substrate, covering the n-Ge substrate with the Ti 3C2Tx colloid solution, and drying the n-Ge substrate to constant weight at room temperature to form a Ti 3C2Tx film layer so that a Schottky heterojunction is formed between the Ti 3C2Tx film layer and the n-Ge substrate.
Preferably, the thickness of the Ti 3C2Tx film layer is approximately 500-600nm
As optimization, obtaining LiF powder and uniformly mixing the LiF powder with HCl solution, then obtaining Ti 3AlC2 powder, adding the Ti 3AlC2 powder into the mixed solution of LiF and HCl, stirring until Ti 3C2Tx solution is generated, washing Ti 3C2Tx, centrifuging after washing to remove supernatant, then freeze-drying until the weight is constant, and adding DMF solution for ice bath ultrasonic dispersion to obtain Ti 3C2Tx colloid solution.
As an optimization, ti 3AlC2 powder was slowly added to the mixed solution of LiF and HCl and stirred in an oil bath at 35-40 ℃ until Ti 3C2Tx solution was produced.
As optimization, when the Ti 3C2Tx solution is washed, firstly, the deionized water is utilized to centrifugally wash for 5-10min at 3500-5000rpm, the supernatant is removed after centrifugation is finished, and the process is repeated until the ph value of the Ti 3C2Tx solution meets the requirement.
As optimization, before the Ti 3C2Tx colloid solution is coated, the surface of the n-Ge substrate is cleaned, the n-Ge substrate is soaked in 10-15% HF solution for 5-10min, the n-Ge substrate is taken out, acetone and methanol are sequentially used for ultrasonic cleaning for 5-10min, and finally ultraviolet ozone is used for cleaning for 15-20min.
The MXene/n-Ge high-speed broadband photoelectric detector is manufactured by the manufacturing method of the MXene/n-Ge high-speed broadband self-powered photoelectric detector.
Compared with the prior art, the invention has the following beneficial effects: the MXene/n-Ge high-speed broadband self-powered photoelectric detector has the advantages of simple structure, stable operation, good detection effect, quick response time, high precision and reliability, small volume, light weight, easy manufacture of the sensor and low cost.
Drawings
FIG. 1 is a diagram of the energy band structure of an MXene/n-Ge heterojunction in equilibrium in accordance with the present invention;
FIG. 2 is a diagram of the band structure of an MXene/n-Ge heterojunction in the present invention under illumination;
FIG. 3 is a graph of ultraviolet electron energy spectra of MXene/n-Ge and n-Ge in the present invention;
FIG. 4 is a diagram of the calculated energy band structure of an MXene/n-Ge heterojunction in the present invention;
FIG. 5 shows the absorbance of Ti 3C2Tx thin films prepared from different concentrations of Ti 3C2Tx colloidal solutions according to the present invention for different wavelengths of light;
FIG. 6 is a graph showing the I-V characteristics of Ti 3C2Tx/n-Ge heterojunction prepared from colloidal solutions of Ti 3C2Tx having concentrations of 0.05mg/ml, 0.1mg/ml, and 0.5mg/ml according to the present invention;
FIG. 7 is a graph showing the I-V characteristics of Ti 3C2Tx/n-Ge heterojunction prepared from colloidal solutions of Ti 3C2Tx at concentrations of 1mg/ml, 2mg/ml, and 4mg/ml in accordance with the present invention;
FIG. 8 is a time-resolved photo-response curve of a Ti 3C2Tx/n-Ge heterojunction prepared from a colloidal solution of Ti 3C2Tx at concentrations of 0.05mg/ml, 0.1mg/ml and 0.5mg/ml at 1550nm,1.5mW/cm 2 light intensity in accordance with the present invention;
FIG. 9 is a time-resolved photo-response curve of a Ti 3C2Tx/n-Ge heterojunction prepared from 1mg/ml, 2mg/ml and 4mg/ml of a Ti 3C2Tx colloidal solution according to the present invention at 1550nm,1.5mW/cm 2 light intensity;
FIG. 10 is an ultraviolet visible near infrared absorption spectrum of an n-Ge substrate in the present invention;
FIG. 11 is a graph showing the I-V characteristics of the detector of the present invention in the dark state and at illumination intensities of 0.024mW/cm 2、0.248mW/cm2 and 0.559mW/cm 2 at 1550 nm;
FIG. 12 is a graph showing I-V characteristics of a detector of the present invention under 1550nm illumination and illumination intensities of 1.5mW/cm 2、3mW/cm2、9.34mW/cm2 and 15.01mW/cm 2;
FIG. 13 is an enlarged I-V characteristic of FIG. 11 in accordance with the present invention;
FIG. 14 is an enlarged I-V characteristic of FIG. 12 in accordance with the present invention;
FIG. 15 is a graph showing the correspondence of detector photocurrent with illumination intensity;
FIG. 16 is a graph showing time resolved light response of the detector of the present invention at 0V, 1550nm pulses, 0.559mW/cm 2,0.248mW/cm2,1.5mW/cm2 and 3mW/cm 2 illumination intensity;
FIG. 17 is a graph showing the response of the detector and the ratio detection rate as a function of light intensity;
FIG. 18 is an I-V characteristic of the detector under 1550nm illumination at-0.5V, -1.5V and-2.5V bias in the invention;
FIG. 19 is a graph showing I-V characteristics of a detector under a 1550nm light bias of-5V, -10V and-20V;
FIG. 20 is a graph showing the response of the detector and the ratio detection rate with different bias voltages according to the present invention;
FIG. 21 is a graph showing time resolved light response curves for an MXene/n-Ge device of the present invention under 1310nm illumination and 0.099mW/cm 2,0.5mW/cm2,1.5mW/cm2 and 3mW/cm 2 illumination intensities;
FIG. 22 is a graph of time resolved light response of an MXene/n-Ge device of the present invention under 980nm illumination and 0.25mW/cm 2,0.5mW/cm2,1mW/cm2 and 3mW/cm 2 illumination intensities;
FIG. 23 is a graph of time resolved light response of an MXene/n-Ge device of the present invention under 638nm illumination and 1.5mW/cm 2,2.4mW/cm2,5mW/cm2 and 13mW/cm 2 illumination intensity;
FIG. 24 is a graph of time resolved light response of an MXene/n-Ge device of the present invention under 450nm illumination and 0.5mW/cm 2,1.02mW/cm2,2.5mW/cm2 and 5mW/cm 2 illumination intensity;
FIG. 25 is a graph of time resolved light response of an MXene/n-Ge device of the present invention under 365nm illumination and 0.42mW/cm 2,2mW/cm2,5mW/cm2 and 15mW/cm 2 illumination intensity;
FIG. 26 is a graph showing the response and specific detection rate of an MXene/n-Ge device according to the invention as a function of light intensity under 365nm illumination;
FIG. 27 is a graph showing the responsivity of an MXene/n-Ge device of the present invention at different wavelengths;
FIG. 28 is a response of an MXene/n-Ge device of the present invention to a pulsed illumination signal having a frequency of 1 kHz;
FIG. 29 is a response of an MXene/n-Ge device of the present invention to a pulsed illumination signal having a frequency of 10 kHz;
FIG. 30 is a response of an MXene/n-Ge device of the present invention to a pulsed illumination signal having a frequency of 100 kHz;
FIG. 31 is a response of a single pulse illumination of a MXene/n-Ge device of the present invention at 100 kHz;
FIG. 32 is a graph of MXene/n-Ge device response versus illumination pulse frequency in the present invention
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention more clear, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. It will be apparent that the described embodiments are some, but not all, embodiments of the invention. The components of the embodiments of the present invention generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations. Thus, the following detailed description of the embodiments of the invention, as presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
It should be noted that: like reference numerals and letters denote like items in the following figures, and thus once an item is defined in one figure, no further definition or explanation thereof is necessary in the following figures. In the description of the present invention, it should be noted that, directions or positional relationships indicated by terms such as "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc., are directions or positional relationships based on those shown in the drawings, or are directions or positional relationships conventionally put in use of the inventive product, are merely for convenience of describing the present invention and simplifying the description, and are not indicative or implying that the apparatus or element to be referred to must have a specific direction, be constructed and operated in a specific direction, and thus should not be construed as limiting the present invention. Furthermore, the terms "first," "second," "third," and the like are used merely to distinguish between descriptions and should not be construed as indicating or implying relative importance. Furthermore, the terms "horizontal," "vertical," and the like do not denote a requirement that the component be absolutely horizontal or overhang, but rather may be slightly inclined. As "horizontal" merely means that its direction is more horizontal than "vertical", and does not mean that the structure must be perfectly horizontal, but may be slightly inclined. In the description of the present invention, it should also be noted that, unless explicitly specified and limited otherwise, the terms "disposed," "mounted," "connected," and "connected" are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the above terms in the present invention will be understood in specific cases by those of ordinary skill in the art.
The manufacturing method of the MXene/n-Ge high-speed broadband photoelectric detector in the specific embodiment comprises the following steps:
And (3) obtaining a Ti 3C2Tx colloid solution and an n-Ge substrate doped with Sb, removing impurities on the surface of the n-Ge substrate, covering the n-Ge substrate with the Ti 3C2Tx colloid solution, and drying the n-Ge substrate to constant weight at room temperature to form a Ti 3C2Tx film layer so that a Schottky heterojunction is formed between the Ti 3C2Tx film layer and the n-Ge substrate.
In this embodiment, the thickness of the Ti 3C2Tx film layer is 500-600nm.
In the specific embodiment, liF powder is obtained and is uniformly mixed with HCl solution, then Ti 3AlC2 powder is obtained and is added into the mixed solution of LiF and HCl, the mixture is stirred until Ti 3C2Tx solution is generated, ti 3C2Tx is washed, supernatant is removed by centrifugation after washing, freeze drying is carried out until the weight is constant, and then DMF solution is added for ice bath ultrasonic dispersion to obtain Ti 3C2Tx colloidal solution.
In this embodiment, ti 3AlC2 powder is slowly added to the mixed solution of LiF and HCl and stirred in an oil bath at 35-40 ℃ until Ti 3C2Tx solution is formed.
In the specific embodiment, when the Ti 3C2Tx solution is washed, the deionized water is firstly utilized to centrifugally wash for 5-10min at 3500-5000rpm, the supernatant is removed after the centrifugation is finished, and the process is repeated until the ph value of the Ti 3C2Tx solution meets the requirement.
In the specific embodiment, before the Ti 3C2Tx colloid solution is coated, the surface of the n-Ge substrate is cleaned, the n-Ge substrate is soaked in 10-15% HF solution for 5-10min, the n-Ge substrate is taken out, then is sequentially cleaned by ultrasonic waves for 5-10min by using acetone and methanol, and finally is cleaned by using ultraviolet ozone for 15-20min.
The MXene/n-Ge high-speed broadband self-powered photoelectric detector is manufactured by the manufacturing method of the MXene/n-Ge high-speed broadband self-powered photoelectric detector.
20Ml of hydrochloric acid with the concentration of 9mol/L and 1g of LiF are fully mixed for standby by using a magnetic stirrer, 1g of Ti 3AlC2 powder is slowly added into a mixed solution of 20ml of HCl and LiF, and the mixture is stirred for 30 hours in an oil bath at 35 ℃. And after the reaction is finished, centrifugally washing for 5min at 3500rpm by using deionized water, pouring out supernatant after the centrifugation is finished, repeating the process until the ph value of the solution is 7, freeze-drying the precipitate after the last centrifugation for 36h, and adding DMF solution into the precipitate for ice bath ultrasonic dispersion to prepare the Ti 3C2Tx colloid solutions with different concentrations. A plurality of 10X 10mm Sb-doped n-Ge (500 μm,5-40 Ω cm, < 111 >) square sheets are used as a substrate, firstly, a 10% HF solution is used for soaking for 5min to remove a surface oxide layer, acetone and methanol are used for sequentially and ultrasonically cleaning to remove other surface impurities, and finally ultraviolet ozone is used for cleaning for 15min for standby. And (3) attaching a PET adhesive tape with 3X 3mm square holes on an n-Ge substrate, coating Ti 3C2Tx colloid solutions of 4mg/ml, 2mg/ml, 1mg/ml, 0.5mg/ml, 0.1mg/ml and 0.05mg/ml on the window area of the PET square holes of the n-Ge substrate with the same specification respectively to form a Schottky heterojunction, uniformly coating conductive silver paste around the PET square holes after natural drying, connecting the conductive silver paste with a Ti 3C2Tx film layer to serve as one end test electrode, brushing a liquid state GaIn on the back surface of the n-Ge substrate to form ohmic contact with the n-Ge substrate, attaching a photoelectric detector on the conductive base copper adhesive tape through a liquid state GaIn, and leading out the photoelectric detector on the copper adhesive tape by using a silver wire to serve as a lower surface test electrode.
Different semiconductor lasers (450 nm, 428 nm, 480 nm,1310nm,1550 nm) and halogen lamps (365 nm) were used to provide different power densities for opto-electronic performance testing of MXene/n-Ge devices. The power densities of different lasers are tested by using an optical power meter, the I-V, I-T and high-low temperature performances of a device are tested by using a semiconductor characterization system and a low-temperature vacuum probe station, and the shape and the structure of MXene are characterized by using a multifunctional high-resolution X-ray diffractometer, an X-ray photoelectron spectrometer, a field emission scanning electron microscope and an ultraviolet-visible spectrophotometer.
MXene has metallic properties that readily contact n-Ge to form a Schottky junction. FIGS. 1 and 2 show the band structure diagrams of an MXene/n-Ge heterojunction in equilibrium and under illumination, respectively. W m is the work function of MXene,Is the schottky barrier height between MXene and n-Ge and V 0 is the built-in potential difference of the MXene/n-Ge schottky junction. Since the work function of MXene is higher than that of n-Ge, electrons will move from n-Ge to MXene to form a built-in electric field when the two are in contact to form a schottky junction. When the device is in an illuminated state, n-Ge is excited to form electron-hole pairs, which are separated by a built-in electric field in the depletion layer. According to the motion rule of charged ions in an electric field, electrons are transferred to the n-Ge direction, and holes are moved to the MXene direction. The generation of the photo-generated electromotive force V bi under illumination will attenuate the built-in potential difference V 0 while causing a difference in fermi level qV bi between MXene and n-Ge. Finally, the band structure of MXene/n-Ge was determined by ultraviolet electron spectroscopy (UPS) calculation. Fig. 3 and 4 are ultraviolet electron spectroscopy images and calculated band structure images of an MXene/n-Ge device, respectively.
Studies have shown that the junction between the two-dimensional material and the semiconductor is greatly affected by the number of layers of the two-dimensional material, and controlling the thickness of the Ti 3C2Tx thin film is critical to the fabrication of high quality schottky junction devices. Fig. 5 shows the absorbance of Ti 3C2Tx thin films prepared from Ti 3C2Tx colloidal solutions with different concentrations for light with different wavelengths, where the Ti 3C2Tx colloidal solutions with different concentrations from top to bottom correspond to the curves from top to bottom, and as the concentration of the Ti 3C2Tx colloidal solution increases, the absorbance of the thin films increases, and when the Ti 3C2Tx thin films form a junction with n-Ge, less light can be transmitted into the Ge layer, which is unfavorable for the generation of photogenerated carriers. FIGS. 6 and 7 are I-V characteristic curves of different concentrations of MXene colloidal solution for preparing a heterojunction device with n-Ge by instillation, and the current of the device gradually decreases with decreasing concentration, indicating that the resistance of the MXene/n-Ge device increases with decreasing MXene colloidal solution. Therefore, the light transmittance, the conductivity and the heterojunction quality of the MXene film can be balanced by adjusting the concentration of the MXene colloid, so that the optimal photoelectric conversion effect is achieved. Under 1550nm laser irradiation with illumination intensity of 1.5mW/cm 2, time-resolved light response curves of MXene colloidal solutions with different concentrations and self-driven devices prepared from n-Ge under 0V bias are shown in FIG. 8 and FIG. 9. As the solubility of the MXene colloidal solution increases, the photocurrent of the device increases and then decreases, which is a result of the combined effect of the MXene film transparency and junction resistance. Wherein devices prepared from 1mg/ml of an MXene colloidal solution exhibited optimal photo-generated current.
In order to further study the photoelectric performance of the heterojunction photoelectric detector, the ultraviolet-visible near-infrared absorption spectrum of the n-Ge substrate is tested, and as shown in fig. 10, the n-Ge substrate has better absorption to light with the wavelength of 300-1900 nm. The photoelectric properties of MXene/n-Ge devices fabricated using 1mg/ml of Ti 3C2Tx colloidal solution were studied in detail using lasers in the ultraviolet to visible to near infrared bands (365 nm, 450nm, 638nm, 980nm, 1310nm, 1550 nm). As shown in fig. 11 and 12, when the MXene/n-Ge device is irradiated with optical signals of 1550nm at different intensities under a bias voltage of 0V and a reverse bias voltage, the current of the MXene/n-Ge device is gradually increased because photo-excited electron-hole pairs cause an increase in photocurrent. The amplified I-V curves are shown in FIGS. 13 and 14, and the MXene/n-Ge device achieves 28 μA short circuit current, 7mV open circuit voltage, and a switching ratio of about 10 4 at a light intensity of 15.01mW/cm 2, while also demonstrating excellent self-powered photovoltaic performance of the MXene/n-Ge device. As shown in fig. 15, the photocurrent as a function of light intensity is in accordance with equation I ph∝Pθ, where θ is about 0.757 (θ < 1), which indicates the presence of defects in the prepared schottky heterojunction. In addition, under the bias of 0V, the time-current response curve of the MXene/n-Ge device under 1550nm pulse laser irradiation with different illumination intensities is studied, and as shown in FIG. 16, the heterojunction photoelectric detector can realize repeatable rapid switching. In order to evaluate the probing performance of the device more accurately, the responsivity (R) and specific probing rate (D) of the device are determined using the following two formulas:
Wherein, the net photocurrent (I ph) is the difference between the photocurrent (I light) and the dark current (I dark), P opt is the incident optical power density, S is the effective illumination area (7 mm 2) of the device, A is the effective device area (9 mm 2), and e is the electron charge amount. And (3) obtaining the dependency relationship between the light intensity of the device and R and D under 1550nm illumination according to the formulas (1) and (2). From fig. 17, it can be derived that both R and D of the MXene/n-Ge device increase and decrease with increasing illumination intensity. The highest responsivity of the device is 40mA/W and the largest specific detection rate is 2.68 multiplied by 10 11 Jones when the illumination intensity is 0.248mW/cm 2, and the reduction of the responsivity and specific detection rate of the MXene/n-Ge device under high light intensity is mainly due to the enhancement of photo-generated carrier recombination caused by defects. In fact, the optical response of an MXene/n-Ge device is not only affected by the intensity of the illumination, but also depends on the operating bias of the MXene/n-Ge device. As shown in fig. 18 and 19, the time-current characteristic curves of different biases under 1550nm illumination were also studied, when the reverse bias voltage was increased from 0.5V to 20V, the photocurrent was increased from 0.47mV to 1.1mV, and R and D values at different operating voltages were calculated and plotted to obtain fig. 20. The R can be obviously enhanced gradually along with the rising of the reverse bias voltage, and the responsivity of the device reaches 2.67A/W under the working voltage of-20V. This is because the built-in electric field of the MXene/n-Ge device is enhanced under reverse bias, thereby improving the drift rate and separation efficiency of hole-electron pairs. Of course, the dark current of the device under reverse bias will also increase significantly, resulting in a reduction of the D-value of the device over a range.
Due to the broadband light absorption characteristics of n-Ge, the current time characteristics of the MXene/n-Ge device under the illumination of 1310nm, 980nm, 638nm, 450nm and 365nm are also studied, as shown in figures 21 to 25, the better response of the device to infrared and ultraviolet can be obviously observed, and figure 26 is a curve of the response and the specific detection rate of the MXene/n-Ge device under the illumination of 365 nm. FIG. 27 is a graph showing the responsivity of an MXene/n-Ge device at different wavelengths, and it is obvious that the device has higher responsivity in the infrared wavelength region, and this characteristic accords with the absorption spectrum of Ge.
Finally, the response time of MXene/n-Ge devices was studied, which is also an important parameter affecting optical communications. Because of the limitations of semiconductor analyzers, oscilloscopes are used to collect voltage signals, and signal generators are used to drive 1310nm lasers as pulsed illumination signals. FIGS. 28-30 are responses of an MXene/n-Ge device to pulsed illumination signals at frequencies of 1kHz, 10kHz, and 100 kHz. The prepared Schottky junction photoelectric detector can work normally at high frequency and has excellent repeatability and stability. To further explore the response speed of the MXene/n-Ge device, the rise time (t rise =1.4 μs) and fall time (t decay =4.1 μs) of the MXene/n-Ge device were obtained by analyzing a single response period at 100kHz as shown in fig. 31, where the rise time was defined as the time interval of 10% to 90% of the response, the fall time was defined as 10% to 90% of the decay, and the response speed of the MXene/n-Ge device was so fast that it was much faster than the same type of photodetection. Such a fast response speed of the MXene/n-Ge device is related to the built-in point of the MXene/n-Ge interface and the excellent electrical properties of MXene. As shown in FIG. 32, by normalizing the response versus the illumination pulse frequency, the 3dB cutoff frequency of the MXene/n-Ge device can be about 62.6kHz, which is much higher than the Ge/PEDOT: PSS heterojunction detector (10 kHz), moSe 2/Ge heterojunction photodetector (< 20 kHz).
The main parameter pairs of the MXene/n-Ge Schottky junction photodetector and other types of detectors in this embodiment are shown in Table 1:
TABLE 1
From the analysis of Table 1, the response speed, the on-off ratio and the response of the MXene/n-Ge self-driven photodetector in the embodiment are superior to those of other photodetectors of the same type, and particularly, the response speed is superior to that of all existing MXene-related photodetectors. The detection wavelength range has obvious advantages, and the better result of the MXene/n-Ge device is mainly due to the high-quality MXene/n-Ge interface, and a small number of defects of the interface can inhibit the composite activity of carriers, so that the responsivity of the MXene/n-Ge device is improved. Meanwhile, the Schottky junction can form a strong built-in electric field, and Ge has high carrier mobility, so that separation and drift speed of hole electron pairs are facilitated, and the device has excellent light response speed.
Finally, it should be noted that the above embodiments are only for illustrating the technical solution of the present invention and not for limiting the technical solution, and those skilled in the art should understand that modifications and equivalents may be made to the technical solution of the present invention without departing from the spirit and scope of the present invention, and all such modifications and equivalents are included in the scope of the claims.
Claims (7)
1. A manufacturing method of an MXene/n-Ge high-speed broadband self-powered photoelectric detector is characterized by comprising the following steps of: comprising the following steps:
And (3) obtaining a Ti 3C2Tx colloid solution and an n-Ge substrate doped with Sb, removing impurities on the surface of the n-Ge substrate, covering the n-Ge substrate with the Ti 3C2Tx colloid solution, and drying the n-Ge substrate to constant weight at room temperature to form a Ti 3C2Tx film layer so that a Schottky heterojunction is formed between the Ti 3C2Tx film layer and the n-Ge substrate.
2. The method for manufacturing the MXene/n-Ge high-speed broadband self-powered photoelectric detector according to claim 1, wherein the method comprises the following steps: the thickness of the Ti 3C2Tx film layer is 500-600nm.
3. The method for manufacturing the MXene/n-Ge high-speed broadband self-powered photoelectric detector according to claim 1, wherein the method comprises the following steps: and (3) obtaining LiF powder, uniformly mixing the LiF powder with an HCl solution, obtaining Ti 3AlC2 powder, adding the Ti 3AlC2 powder into the mixed solution of LiF and HCl, stirring until Ti 3C2Tx is generated, washing Ti 3C2Tx, centrifuging to remove supernatant, freeze-drying until the weight is constant, and adding the DMF solution into the mixture for ice bath ultrasonic dispersion to obtain the Ti 3C2Tx colloid solution.
4. The method for manufacturing the MXene/n-Ge high-speed broadband self-powered photoelectric detector according to claim 3, wherein the method comprises the following steps: the Ti 3AlC2 powder was slowly added to the mixed solution of LiF and HCl and stirred in an oil bath at 35-40 ℃ until Ti 3C2Tx solution was produced.
5. The method for manufacturing the MXene/n-Ge high-speed broadband self-powered photoelectric detector according to claim 3, wherein the method comprises the following steps: when Ti 3C2Tx is washed, firstly, centrifugal washing is carried out for 5-10min by using deionized water at 3500-5000rpm, supernatant is removed after centrifugation is finished, and the process is repeated until the ph value of Ti 3C2Tx solution meets the requirement.
6. The method for manufacturing the MXene/n-Ge high-speed broadband self-powered photoelectric detector according to claim 1, wherein the method comprises the following steps: before the Ti 3C2Tx colloid solution is coated, cleaning the surface of the n-Ge substrate, firstly soaking the n-Ge substrate in an HF solution with the concentration of 10-15% for 5-10min, taking out the n-Ge substrate, then sequentially ultrasonically cleaning the n-Ge substrate for 5-10min by using acetone and methanol, and finally cleaning the n-Ge substrate by using ultraviolet ozone for 15-20min.
7. An MXene/n-Ge high-speed broadband photoelectric detector is characterized in that: is prepared by a method for manufacturing the MXene/n-Ge high-speed broadband photoelectric detector according to any one of claims 1 to 6.
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| CN113097315A (en) * | 2021-03-30 | 2021-07-09 | 电子科技大学 | MSM multi-quantum well photoelectric detector using MXene-GaN Schottky junction and preparation method thereof |
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| CN113097315A (en) * | 2021-03-30 | 2021-07-09 | 电子科技大学 | MSM multi-quantum well photoelectric detector using MXene-GaN Schottky junction and preparation method thereof |
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