CN114927398A - Microstrip line slow wave structure - Google Patents
Microstrip line slow wave structure Download PDFInfo
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- CN114927398A CN114927398A CN202210654053.XA CN202210654053A CN114927398A CN 114927398 A CN114927398 A CN 114927398A CN 202210654053 A CN202210654053 A CN 202210654053A CN 114927398 A CN114927398 A CN 114927398A
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- microstrip line
- wave structure
- slow
- pyrolytic graphite
- graphite layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J23/00—Details of transit-time tubes of the types covered by group H01J25/00
- H01J23/16—Circuit elements, having distributed capacitance and inductance, structurally associated with the tube and interacting with the discharge
- H01J23/24—Slow-wave structures, e.g. delay systems
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J25/00—Transit-time tubes, e.g. klystrons, travelling-wave tubes, magnetrons
- H01J25/34—Travelling-wave tubes; Tubes in which a travelling wave is simulated at spaced gaps
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Abstract
In order to solve the technical problem that the slow-wave structure of the existing microstrip line cannot conduct heat out of a metal shielding cavity in time, so that the slow-wave structure generates thermal deformation due to overhigh temperature to influence the working stability of a traveling wave tube, an embodiment of the invention provides a microstrip line slow-wave structure, which comprises: a dielectric substrate; the metal microstrip line is used for transmitting slow waves and arranged on one side of the medium substrate; one side of the pyrolytic graphite layer is arranged on the other side of the medium substrate; and the metal shielding cavity is arranged on the other side of the pyrolytic graphite layer. According to the embodiment of the invention, the heat of the microstrip line slow-wave structure is conducted to the metal shielding cavity from the dielectric substrate through the pyrolytic graphite layer for heat dissipation, and the heat dissipation mode enables the microstrip line slow-wave structure of the embodiment of the invention to have better heat dissipation capability compared with a conventional microstrip line slow-wave structure, the maximum temperature of the conventional microstrip line slow-wave structure in the embodiment of the invention is 153 ℃, the maximum temperature of the microstrip line slow-wave structure in the embodiment of the invention is only 115 ℃, and the temperature is reduced by about 25%.
Description
Technical Field
The invention relates to a microstrip line slow wave structure.
Background
The vacuum electronic device is a device for realizing the interaction of electrons and electromagnetic wave energy in a vacuum state, wherein the device for realizing the high-frequency signal amplification by transferring the energy of the electrons to a high-frequency field is called a microwave power amplifier, and a traveling wave tube is used as a core device of the amplifier, thereby playing an important role in the fields of radars, military countermeasures and civilian use.
When the traveling wave tube carries out energy interaction, the slow wave structure of the traveling wave tube inevitably bears partial thermal power, and for the microstrip line traveling wave tube, the thermal power borne by the microstrip line slow wave structure is mainly caused by two factors. Firstly, the ohmic loss of the metal microstrip line can cause a part of heat, and although the dielectric loss of the substrate material can also be converted into heat, the ohmic loss is far greater than the dielectric loss, so that the thermal power caused by the dielectric loss is small and is generally ignored during calculation. Secondly, because the circulation rate of the electron beam causes a part of electrons moving at high speed to be intercepted by the slow wave structure, and the energy carried by the intercepted electrons also forms the main heat source of the slow wave structure. The heat accumulated on the slow-wave structure is mainly transferred from the medium substrate to the metal shielding cavity in a heat conduction mode, and finally transferred to a heat dissipation system of the traveling wave tube through the metal shielding cavity. In this in-process, if the heat can not in time conduct away, will lead to slow wave structure high temperature and then take place unpredictable deformation, slow wave structure takes place deformation and will directly change its high frequency characteristic, influences the normal work of travelling wave tube.
Disclosure of Invention
The inventor finds that a conventional microstrip line slow-wave structure generally adopts a quartz material as a dielectric substrate, the thermal conductivity of the quartz material is about 1.38W/m · K at room temperature, heat carried by the slow-wave structure cannot be conducted to a traveling wave tube heat dissipation system through a metal shielding cavity in time, and the slow-wave structure is thermally deformed due to overhigh temperature, so that the high-frequency characteristic is changed, and the working stability of the traveling wave tube is influenced finally.
In order to solve the technical problem that the working stability of a traveling wave tube is affected by thermal deformation of a slow-wave structure due to overhigh temperature because the conventional microstrip line slow-wave structure cannot conduct heat out of a metal shielding cavity in time, the embodiment of the invention provides the microstrip line slow-wave structure.
The purpose of the embodiment of the invention is realized by the following technical scheme:
the embodiment of the invention provides a microstrip line slow wave structure, which comprises:
a dielectric substrate;
the metal microstrip line is used for transmitting slow waves and arranged on one side of the medium substrate;
one side of the pyrolytic graphite layer is arranged on the other side of the medium substrate; and
and the metal shielding cavity is arranged on the other side of the pyrolytic graphite layer.
Further, the direction of the vertical deposition layer of the pyrolytic graphite layer is parallel to the metal microstrip line; the direction of the parallel deposition layer of the pyrolytic graphite layer is vertical to the metal microstrip line.
Further, the thermal conductivity of the pyrolytic graphite layer in the direction parallel to the deposition layer is at least 1500W/m.K; the thermal conductivity of the pyrolytic graphite layer in the direction vertical to the deposition layer is 10-20W/m.K.
Furthermore, the metal microstrip line is a metal microstrip line which is bent periodically.
Furthermore, the periodically bent metal microstrip line comprises a plurality of sequentially connected U-shaped, N-shaped or V-shaped periodic repeating units.
Further, the pyrolytic graphite layers have the same length and width dimensions as the media substrate.
Furthermore, the thickness t of the microstrip line structure is 0.005-0.010 mm; the length L of the periodically bent metal microstrip line is 0.10-0.15 mm.
Furthermore, the thickness hd of the pyrolytic graphite layer is 0.8-1.2 mm.
Further, the lateral width w1 of the media substrate is 0.6-1.0 mm; the transverse length w2 of the media substrate is 0.2-0.5 mm; the thickness h of the medium substrate is 0.1-0.2 mm.
Furthermore, the microstrip line width a of the microstrip line structure is 0.01-0.05 mm.
Compared with the prior art, the embodiment of the invention has the following advantages and beneficial effects:
according to the microstrip line slow-wave structure, heat of the microstrip line slow-wave structure is conducted to the metal shielding cavity from the medium substrate through the pyrolytic graphite layer for heat dissipation, and the heat dissipation mode enables the microstrip line slow-wave structure to have better heat dissipation capacity compared with a conventional microstrip line slow-wave structure, the maximum temperature of the conventional microstrip line slow-wave structure in the embodiment of the invention is 153 ℃, the maximum temperature of the microstrip line slow-wave structure in the embodiment of the invention is only 115 ℃, and the temperature is reduced by about 25%.
Drawings
In order to more clearly illustrate the technical solutions of the exemplary embodiments of the present invention, the drawings that are required in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present invention and therefore should not be considered as limiting the scope, and that those skilled in the art may also derive other related drawings based on these drawings without inventive effort.
Fig. 1 is a schematic diagram of a microstrip line slow wave structure according to an embodiment of the present invention.
Fig. 2 is a schematic diagram of a microstrip line slow-wave structure with a single microstrip line structure.
Fig. 3 is a schematic diagram of dimensional parameters of components of the microstrip line slow-wave structure.
Fig. 4 is a schematic diagram illustrating a comparison of the microstrip line slow-wave structure and the conventional microstrip line slow-wave structure in the temperature distribution along the thickness direction of the substrate according to the embodiment of the invention.
Reference numbers and corresponding part names in the drawings:
1-dielectric substrate, 2-metal microstrip line, 3-pyrolytic graphite layer and 4-metal shielding cavity.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is further described in detail below with reference to examples and accompanying drawings, and the exemplary embodiments and descriptions thereof are only used for explaining the present invention and are not meant to limit the present invention.
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. However, it will be apparent to one of ordinary skill in the art that: it is not necessary to employ these specific details to practice the present invention. In other instances, well-known structures, circuits, materials, or methods have not been described in detail so as not to obscure the present invention.
Throughout the specification, reference to "one embodiment," "an embodiment," "one example," or "an example" means: the particular features, structures, or characteristics described in connection with the embodiment or example are included in at least one embodiment of the invention. Thus, the appearances of the phrases "one embodiment," "an embodiment," "one example" or "an example" in various places throughout this specification are not necessarily all referring to the same embodiment or example. Furthermore, the particular features, structures, or characteristics may be combined in any suitable combination and/or sub-combination in one or more embodiments or examples. Further, those of ordinary skill in the art will appreciate that the illustrations provided herein are for illustrative purposes and are not necessarily drawn to scale. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.
In the description of the present invention, the terms "front", "rear", "left", "right", "upper", "lower", "vertical", "horizontal", "upper", "lower", "inner", "outer", etc. indicate orientations or positional relationships based on those shown in the drawings, merely for convenience of description and simplification of description, and do not indicate or imply that the device or element referred to must have a particular orientation, be constructed in a particular orientation, and be operated, and therefore, should not be construed as limiting the scope of the invention.
Examples
In order to solve the technical problem that the working stability of a traveling wave tube is affected by thermal deformation of a slow-wave structure due to overhigh temperature because the conventional microstrip line slow-wave structure cannot conduct heat out of a metal shielding cavity in time, the embodiment of the invention provides the microstrip line slow-wave structure.
An embodiment of the present invention provides a microstrip line slow wave structure, which is shown in fig. 1 to 4, and includes: a dielectric substrate 1; the metal microstrip line 2 is used for transmitting slow waves and arranged on one side of the medium substrate; a pyrolytic graphite layer 3, wherein one side of the pyrolytic graphite layer is arranged at the other side of the medium substrate; and the metal shielding cavity 4 is arranged on the other side of the pyrolytic graphite layer.
Referring to fig. 1, the microstrip line slow-wave structure includes a dielectric substrate 1, a metal microstrip line 2, a pyrolytic graphite layer 3, and a metal shielding cavity 4; the metal microstrip line is arranged above the dielectric substrate, the pyrolytic graphite layer is arranged below the substrate, and the metal shielding cavity is arranged below the pyrolytic graphite layer.
The inventor finds that according to the conduction path of heat on the microstrip line slow-wave structure, the medium substrate is used as an important heat dissipation medium of the microstrip line traveling wave tube, and the heat dissipation capacity of the traveling wave tube heat dissipation system can be effectively improved by adopting the material with high heat conductivity. Pyrolytic graphite is used as a novel heat conduction material, is usually formed by depositing a layer of heat conduction material, and the heat conduction rate of the pyrolytic graphite is obviously anisotropic in a direction parallel to a deposition layer and a direction vertical to the deposition layer, and can reach more than 4 times of that of copper in the direction parallel to the deposition layer.
The maximum temperature of the conventional microstrip line slow-wave structure in the embodiment of the invention is 153 ℃, and the maximum temperature of the microstrip line slow-wave structure in the embodiment of the invention is only 115 ℃, and the temperature is reduced by about 25%.
Therefore, the microstrip line slow-wave structure provided by the embodiment of the invention conducts the heat of the microstrip line slow-wave structure from the dielectric substrate to the metal shielding cavity through the pyrolytic graphite layer for heat dissipation, and compared with the conventional microstrip line slow-wave structure, the microstrip line slow-wave structure provided by the embodiment of the invention has better heat dissipation capability by the heat dissipation mode.
Further, the direction of the vertical deposition layer of the pyrolytic graphite layer is parallel to the metal microstrip line; the direction of the parallel deposition layer of the pyrolytic graphite layer is vertical to the metal microstrip line.
Alternatively, referring to fig. 1 and 2, fig. 2 is the same as the coordinate system of fig. 1. Referring to fig. 2, the direction of the vertical deposition layer of the pyrolytic graphite layer is the Z direction of fig. 2, and the Z direction is parallel to the extending direction of the metal microstrip line above the upper dielectric substrate; the direction of the parallel deposition layer of the pyrolytic graphite layer is the direction of the xy plane, and the direction is vertical to the extending direction of the metal microstrip line.
Further, the thermal conductivity of the pyrolytic graphite layer in the direction parallel to the deposition layer is at least 1500W/m.K; the thermal conductivity of the pyrolytic graphite layer in the direction vertical to the deposition layer is 10-20W/m.K.
Furthermore, the metal microstrip line is a metal microstrip line which is bent periodically.
The periodic bending refers to a structure having repeated unit structures, and the repeated unit structures have periodic bending, such as a serpentine structure. The metal microstrip line can also be other structures capable of transmitting slow waves.
Furthermore, the periodically bent metal microstrip line comprises a plurality of sequentially connected U-shaped, N-shaped and/or V-shaped periodic repeating units.
Further, the pyrolytic graphite layers have the same length and width dimensions as the media substrate.
Furthermore, the thickness t of the microstrip line structure is 0.005-0.010 mm; the length L of the periodically bent metal microstrip line is 0.10-0.15 mm.
Furthermore, the thickness hd of the pyrolytic graphite layer is 0.8-1.2 mm.
Further, the lateral width w1 of the media substrate is 0.6-1.0 mm; the transverse length w2 of the media substrate is 0.2-0.5 mm; the thickness h of the medium substrate is 0.1-0.2 mm.
Furthermore, the microstrip line width a of the microstrip line structure is 0.01-0.05 mm.
Referring to fig. 3, the dimensions of the microstrip line slow wave structure are as follows: the thermal conductivity of the dielectric substrate 1 is rho, the thickness of the dielectric substrate is h, the thickness of the pyrolytic graphite layer is hd, the transverse length is w2, the period length is L, the thickness of the metal microstrip line is t, the line width of the microstrip line is a, and the transverse width is w 1. The structural dimensions of the specific embodiment are as follows (in mm): a is 0.03, t is 0.007, L is 0.12, h is 0.11, hd is 1, w1 is 0.81, and w2 is 0.39.
The embodiment of the invention is subjected to simulation calculation by thermal analysis simulation software, and a simulation result of the thermal analysis of the structure is obtained. Referring to fig. 4, it can be seen that the temperature gradually decreases along the thickness direction of the dielectric substrate, but the microstrip line slow-wave structure of the embodiment of the invention has a lower temperature than the conventional microstrip line slow-wave structure at any position with the same thickness. The highest temperature of the conventional microstrip line slow-wave structure is 153 ℃, the highest temperature of the high-heat-conduction microstrip line slow-wave structure is only 115 ℃, the temperature is reduced by about 25%, and the heat dissipation capability of the microstrip line slow-wave structure is obviously superior to that of the conventional microstrip line slow-wave structure.
In the embodiment of the invention, the direction of the vertical deposition layer of the pyrolytic graphite layer is parallel to the metal microstrip line; the direction of the parallel deposition layer of the pyrolytic graphite layer is vertical to the metal microstrip line, the efficient heat conduction characteristic of the pyrolytic graphite layer in the direction of the parallel deposition layer is effectively utilized, and the temperature of the slow wave structure can be effectively reduced, so that the embodiment of the invention has better heat dissipation capability.
The above-mentioned embodiments, objects, technical solutions and advantages of the present invention are further described in detail, it should be understood that the above-mentioned embodiments are only examples of the present invention, and are not intended to limit the scope of the present invention, and any modifications, equivalent substitutions, improvements and the like made within the spirit and principle of the present invention should be included in the scope of the present invention.
Claims (10)
1. A microstrip line slow wave structure, comprising:
a dielectric substrate;
the metal microstrip line is used for transmitting slow waves and arranged on one side of the medium substrate;
one side of the pyrolytic graphite layer is arranged on the other side of the medium substrate; and
and the metal shielding cavity is arranged on the other side of the pyrolytic graphite layer.
2. The microstrip line slow wave structure of claim 1 wherein the vertical deposition layer direction of the pyrolytic graphite layer is parallel to the metal microstrip line; the direction of the parallel deposition layer of the pyrolytic graphite layer is vertical to the metal microstrip line.
3. The microstrip line slow wave structure of claim 2 wherein the thermal conductivity of the pyrolytic graphite layer in the direction parallel to the deposited layer is at least 1500W/m-K; the thermal conductivity of the pyrolytic graphite layer in the direction vertical to the deposition layer is 10-20W/m.K.
4. The microstrip slow wave structure of claim 1, wherein the metal microstrip line is a periodically bent metal microstrip line.
5. The microstrip line slow wave structure of claim 4, wherein the periodically bent metal microstrip line includes a plurality of sequentially connected U-shaped, N-shaped or V-shaped periodically repeating units.
6. The microstrip line slow wave structure of claim 1 wherein the pyrolytic graphite layer has length and width dimensions the same as the dielectric substrate.
7. The microstrip line slow wave structure of claim 1 wherein the microstrip line structure has a thickness t of 0.005-0.010 mm; the length L of the periodically bent metal microstrip line is 0.10-0.15 mm.
8. The microstrip slow wave structure of claim 1 wherein the pyrolytic graphite layer has a thickness hd of 0.8-1.2 mm.
9. The microstrip line slow wave structure of claim 1, wherein the dielectric substrate has a lateral width w1 of 0.6-1.0 mm; the transverse length w2 of the media substrate is 0.2-0.5 mm; the thickness h of the medium substrate is 0.1-0.2 mm.
10. The microstrip line slow wave structure of claim 1 wherein the microstrip line structure has a microstrip line width a of 0.01-0.05 mm.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202210654053.XA CN114927398A (en) | 2022-06-10 | 2022-06-10 | Microstrip line slow wave structure |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202210654053.XA CN114927398A (en) | 2022-06-10 | 2022-06-10 | Microstrip line slow wave structure |
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Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5671250A (en) * | 1979-11-14 | 1981-06-13 | Nec Corp | High frequency electronic tube |
| US20030174031A1 (en) * | 2002-03-13 | 2003-09-18 | Ali Mir Akbar | Microwave monolithic integrated circuit assembly with multi-orientation pyrolytic graphite heat-dissipating assembly |
| US20090067132A1 (en) * | 2007-09-07 | 2009-03-12 | Specialty Minerals (Michigan) Inc. | Heat spreader and method of making the same |
| CN101642865A (en) * | 2008-08-06 | 2010-02-10 | 中国科学院电子学研究所 | Deformation-free thermal extrusion method for helix slow-wave component preparation |
| CN105428189A (en) * | 2016-01-04 | 2016-03-23 | 电子科技大学 | Slow wave structure of coplanar waveguide |
| CN105489458A (en) * | 2016-01-15 | 2016-04-13 | 电子科技大学 | Planar annular microstrip slow-wave structure |
| CN108648978A (en) * | 2018-05-25 | 2018-10-12 | 东南大学 | A kind of micro-strip meander-line slow wave structure based on period metal cylinder |
| US20200335417A1 (en) * | 2019-04-16 | 2020-10-22 | Abb Schweiz Ag | Heatsink assembly, method of manufacturing a heatsink assembly, and an electrical device |
-
2022
- 2022-06-10 CN CN202210654053.XA patent/CN114927398A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5671250A (en) * | 1979-11-14 | 1981-06-13 | Nec Corp | High frequency electronic tube |
| US20030174031A1 (en) * | 2002-03-13 | 2003-09-18 | Ali Mir Akbar | Microwave monolithic integrated circuit assembly with multi-orientation pyrolytic graphite heat-dissipating assembly |
| US20090067132A1 (en) * | 2007-09-07 | 2009-03-12 | Specialty Minerals (Michigan) Inc. | Heat spreader and method of making the same |
| CN101642865A (en) * | 2008-08-06 | 2010-02-10 | 中国科学院电子学研究所 | Deformation-free thermal extrusion method for helix slow-wave component preparation |
| CN105428189A (en) * | 2016-01-04 | 2016-03-23 | 电子科技大学 | Slow wave structure of coplanar waveguide |
| CN105489458A (en) * | 2016-01-15 | 2016-04-13 | 电子科技大学 | Planar annular microstrip slow-wave structure |
| CN108648978A (en) * | 2018-05-25 | 2018-10-12 | 东南大学 | A kind of micro-strip meander-line slow wave structure based on period metal cylinder |
| US20200335417A1 (en) * | 2019-04-16 | 2020-10-22 | Abb Schweiz Ag | Heatsink assembly, method of manufacturing a heatsink assembly, and an electrical device |
Non-Patent Citations (1)
| Title |
|---|
| LUQI ZHANG等: "A NOVEL Microstrip Meander-Line Slow Wave Structure for Millimeter-Wave TWT", 《IEEE INTERNATIONAL VACUUM ELECTRONICS CONFERENCE》 * |
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