CN114918553A - Self-adaptive control method for thermal deformation in laser etching process - Google Patents
Self-adaptive control method for thermal deformation in laser etching process Download PDFInfo
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- CN114918553A CN114918553A CN202210749365.9A CN202210749365A CN114918553A CN 114918553 A CN114918553 A CN 114918553A CN 202210749365 A CN202210749365 A CN 202210749365A CN 114918553 A CN114918553 A CN 114918553A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/362—Laser etching
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/03—Observing, e.g. monitoring, the workpiece
- B23K26/032—Observing, e.g. monitoring, the workpiece using optical means
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/03—Observing, e.g. monitoring, the workpiece
- B23K26/034—Observing the temperature of the workpiece
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/70—Auxiliary operations or equipment
- B23K26/702—Auxiliary equipment
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P90/00—Enabling technologies with a potential contribution to greenhouse gas [GHG] emissions mitigation
- Y02P90/02—Total factory control, e.g. smart factories, flexible manufacturing systems [FMS] or integrated manufacturing systems [IMS]
Abstract
The invention discloses a thermal deformation self-adaptive control method in a laser etching process, which comprises the steps of scanning and processing a processing area in different areas through rasterization processing of the processing area, and adjusting the processing sequence of a grid unit according to a verified planned path; in order to better control the thermal deformation in the processing process, machine vision is adopted to measure the thermal deformation amount of each grid unit in the etching process in real time, if the thermal deformation amount exceeds a set threshold value, the processing of the current grid unit is stopped, the processing of the next grid unit is carried out according to the processing sequence, and the thermal deformation amount can be effectively controlled by adjusting the processing of the grid units in real time, so that the high-quality processing of the thin plate is realized; the method effectively reduces the investment of preparation before processing and can effectively control the amount of thermal deformation.
Description
Technical Field
The invention relates to the technical field of laser processing process control, in particular to a thermal deformation self-adaptive control method in a laser etching process.
Background
The laser etching is to apply pulse laser to the surface of material to vaporize and evaporate the material instantaneously for machining holes, slots, seams, etc. In the application of large-area laser etching of a thin plate (less than 1 mm), an etching area needs to undergo periodic cyclic scanning processing of a high-energy laser beam, and a large temperature gradient can be formed locally, so that the plate generates complex stress-strain evolution in the etching process, and further, large residual stress exists in the etched plate, so that the plate generates severe buckling deformation, and the processing quality is influenced.
The main method for controlling deformation at present can control deformation by designing a special clamp or placing a heat conduction device such as a cold water plate and the like below a processing plate, but the control cannot achieve an ideal effect, and the preparation investment at the early stage of processing is large, so that the problem of how to efficiently solve the thermal deformation problem in the thin plate etching process is a problem to be solved urgently, which is also the problem to be solved by the invention.
Disclosure of Invention
The technical purpose is as follows: the invention discloses a thermal deformation self-adaptive control method in a laser etching process, which can effectively control the thermal deformation amount and aims to overcome the defect that the deformation of a plate is not sufficiently controlled in the laser etching process of the conventional thin plate.
The technical scheme is as follows: in order to achieve the technical purpose, the invention adopts the following technical scheme:
a self-adaptive control method for thermal deformation in a laser etching process comprises the following steps:
s01, firstly, rasterizing a processing area of the workpiece to be divided into a plurality of grid units;
s02, numbering the grid cells;
s03, planning a processing sequence according to the temperature distribution of the workpiece in the laser etching process;
s04, etching the workpiece according to the processing sequence in the step S03.
Preferably, in step S01, the rasterizing process of the workpiece processing area includes:
s011, acquiring a minimum external rectangle of a workpiece processing area by adopting a 'rotating clamping shell' method;
s012, selecting a grid division size according to the length-width ratio of the minimum external rectangle, equally dividing the minimum external rectangle into a plurality of grid units, wherein the area of each grid unit is not more than the processing range of the laser etching processing head;
and S013, merging the grid units with incomplete edge positions of the workpiece processing area.
Preferably, in the rasterizing process of the workpiece processing area, the merging process of the grid cells at the edge position includes:
forming a plurality of boundary grid units between the edge position of the workpiece processing area and the lines for dividing grids, and merging the boundary grid units with adjacent grid units or boundary grid units when the area of the boundary grid units is less than half of the area of the grid units; and calculating the total area after merging, and if the total area is more than or equal to two times of the area of the grid unit, terminating the merging.
Preferably, the numbering process of the rasterized processing region according to the present invention comprises: numbering is done in order from top to bottom, left to right.
Preferably, in step S03, the process of planning the processing sequence of the present invention includes: selecting one grid unit as a first processing unit, then calculating the center distance between the selected grid unit and other grid units, and taking the other grid which is farthest away from the center distance of the current grid unit as a second processing unit; and taking the next grid unit with the largest distance from the second processing unit in the unprocessed grid units as a new processing unit, and sequentially finishing the processing sequence planning of all the grid units.
Preferably, the present invention monitors thermal deformation of each grid cell during the etching process according to the process sequence in step S04, and processes the grid cell according to the following steps,
a) when the thermal deformation exceeds a set threshold, stopping the machining of the current grid unit, and updating the residual machining times of the grid unit;
b) processing the next grid unit according to the processing sequence, and so on until all grids complete one cycle;
c) repeatedly traversing the grid units according to the processing sequence, if the residual processing times of the grid units are more than 0, starting the grid unit processing, monitoring the thermal deformation of each grid unit and adjusting the processing grids in real time until the circulation of all the grid units is completed;
d) and c), repeating the step c), and processing until the processing of all grid units is completed.
Preferably, the thermal deformation monitoring process of the grid unit comprises the following steps: marking points are pasted on a non-processing area of the workpiece according to the grid unit distribution, a workpiece image signal before processing is collected through a camera and used as a reference graph, the positions of all the marking points are identified, the image signal of the workpiece is continuously collected in the working process, the positions of the marking points are identified, the change of the positions of the marking points is calculated, and the deformation amount of the marking point area is calculated according to the change value of the positions of the marking points, so that the heat deformation amount of each grid area is obtained.
Has the beneficial effects that: the self-adaptive control method for thermal deformation in the laser etching process has the following beneficial effects:
1. the invention can carry out grid treatment on the processing area of the workpiece, and plan the processing sequence, thereby better controlling the thermal deformation in the processing process.
2. The invention combines the grid units at the edge positions, mainly considers the situation that the area of the grid pattern is possibly narrow when the edge pattern of the divided grid is smaller than half of the area of the grid unit, considers the combination of the edge grid unit and the adjacent grid unit, and stops the combination when the total area of the combined grid is larger than or equal to the area of the grid unit. By combining the edge grid patterns, the number of codes is reduced as much as possible on the premise of ensuring that the difference between the grid units in the edge area and the divided complete grid units is not large, the coding difficulty of the processing sequence is reduced, and the processing efficiency is improved.
3. In the process of planning the processing sequence, the new processing unit is the unprocessed grid unit which is farthest away from the center of the current grid unit, so that the local heat concentration can be avoided, the heat distribution is balanced, and the difficulty in controlling the thermal deformation is reduced.
4. In the laser etching processing process, the deformation of the workpiece is monitored by matching the identification mark points in the non-processing area with the camera, the processing position is adjusted in real time, and the thermal deformation of the workpiece is monitored and adjusted in the processing process.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below.
FIG. 1 is a schematic view of the division of the processing area according to the present invention;
FIG. 2 is a schematic view of a laser etching apparatus according to the present invention.
Detailed Description
The present invention will be more clearly and completely described below by way of a preferred embodiment in conjunction with the accompanying drawings, without thereby limiting the scope of the invention to the described embodiment.
The invention discloses a thermal deformation self-adaptive control method in a laser etching process, which comprises the following steps:
s01, firstly, rasterizing a processing area of the workpiece to be divided into a plurality of grid units;
the rasterization processing process of the workpiece processing area comprises the following steps:
s011, acquiring a minimum external rectangle of a workpiece processing area by adopting a 'rotating clamping shell' method;
s012, selecting a grid dividing size according to the length-width ratio of the minimum external rectangle, equally dividing the minimum external rectangle into a plurality of grid units, wherein the area of each grid unit is not more than the processing range of the laser etching processing head;
the specific grid division size can be selected according to the thermal deformation coefficient of the workpiece, and the grid unit size can be reduced if the thermal deformation coefficient is larger, so that the heat of single processing is small, the heat can be rapidly dissipated, and the deformation influence on the material is reduced; and (3) importing the outline of the workpiece processing area into a computer, cutting the non-processing area unit by using a cutting algorithm of computer graphics after the grid size is selected, only reserving the part containing the outline graph, and finally finishing the division of the processing area according to the selected grid size.
Since the machining area is not in a regular shape, the grid is not complete at the intersection between the edge of the machining area and the grid, and if the grid located at the edge is numbered according to the complete grid, the coding difficulty is increased, unnecessary switching of machining head stations is caused, and the machining efficiency is affected, so that step S013 is required.
S013, merging grid units with incomplete edge positions of the workpiece machining area; the grid cell merging process for the edge position includes:
forming a plurality of boundary grid units between the edge position of the workpiece processing area and the lines for dividing grids, and merging the boundary grid units with adjacent grid units or boundary grid units when the area of the boundary grid units is less than half of the area of the grid units; calculating the total area after merging, and if the total area after merging is larger than or equal to the area of the grid unit, stopping merging; otherwise, continuously searching adjacent graphs for merging.
S02, after the division and combination of the grid units are completed, numbering the grid units;
the process of numbering the rasterized processing regions includes: numbering is done in order from top to bottom, left to right, with reference to figure 1 of the present invention, starting with number 1 and so on.
S03, planning a processing sequence according to the temperature distribution of the workpiece in the laser etching process;
the process of planning the processing sequence comprises the following steps: selecting one grid unit as a first processing unit, then calculating the center distance between the selected grid unit and other grid units, and taking the other grid which is farthest away from the center distance of the current grid unit as a second processing unit; calculating the distance between the grid units by adopting a coordinate system established according to the contour of the processing area and the coordinates of the central point of each grid unit in the coordinate system; taking the next grid unit with the largest distance with the second processing unit in the unprocessed grid units as a new processing unit, and sequentially finishing the processing sequence planning of all the grid units; and inputting the serial numbers into a processing system according to a planned sequence, then processing the serial numbers by the processing system according to a preset sequence, and initializing the residual processing times of each grid to be equal to the processing times according to the process requirements.
S04, the workpiece is etched according to the processing sequence of step S03.
In the process of etching according to the processing sequence, measuring the thermal deformation quantity by adopting a machine vision mode, wherein an image acquisition device is a CCD industrial camera, the camera is directly connected with an upper computer through an Ethernet port of the camera, and the real-time acquisition of image signals is realized by programming based on an SDK provided by a camera manufacturer; as shown in fig. 2, the processing and inspection apparatus of the present invention includes an industrial camera 1, a processing head 2, and an upper computer 3; industrial camera 1 and processing head 2 are placed in the top of work piece 4, and industrial camera 1 monitors each grid cell's thermal deformation along with processing head 2 synchronous motion, and specific measurement process includes: according to the distribution of the grid units, marking points are pasted on a non-processing area on a workpiece, the marking points mark around the periphery of an etching area, an image signal of the workpiece before processing is collected by a camera and used as a reference pattern, the positions of all the marking points are identified, the image signal of the workpiece is continuously collected in the working process, the positions of the marking points are identified, the change of the positions of the marking points is calculated, and the deformation amount of the marking point area is calculated according to the change value of the positions of the marking points, so that the heat deformation amount of each grid area is obtained; when the amount of thermal deformation exceeds a set threshold, stopping the machining of the current grid unit, and machining according to the following steps:
a) when the thermal deformation exceeds a set threshold, stopping the machining of the current grid unit, and updating the residual machining times of the grid unit;
b) processing the next grid unit according to the processing sequence, and so on until all grids complete one cycle;
c) repeatedly traversing the grid units according to the processing sequence, starting the grid unit processing if the residual processing times of the grid units are more than 0, monitoring the thermal deformation of each grid unit and adjusting the processing grids in real time until the circulation of all grids is completed;
d) and c), repeating the step c), and processing until the processing of all grid units is completed.
The above description is only of the preferred embodiments of the present invention, and it should be noted that: it will be apparent to those skilled in the art that various modifications and adaptations can be made without departing from the principles of the invention and these are intended to be within the scope of the invention.
Claims (7)
1. A self-adaptive control method for thermal deformation in a laser etching process is characterized by comprising the following steps:
s01, firstly, rasterizing a processing area of the workpiece to be divided into a plurality of grid units;
s02, numbering the grid cells;
s03, planning a processing sequence according to the temperature distribution of the workpiece in the laser etching process;
s04, the workpiece is etched according to the processing sequence of step S03.
2. The adaptive control method for thermal deformation in laser etching process according to claim 1, wherein the rasterizing process of the workpiece processing area in step S01 includes:
s011, acquiring a minimum-area external rectangle of a workpiece processing area by adopting a 'rotating clamping shell' method;
s012, selecting a grid dividing size according to the length-width ratio of the minimum external rectangle, equally dividing the minimum external rectangle into a plurality of grid units, wherein the area of each grid unit is not more than the processing range of the laser etching processing head;
and S013, merging the grid units with incomplete edge positions of the workpiece processing region.
3. The adaptive control method for thermal deformation in laser etching process as claimed in claim 2, wherein the merging process of grid cells at edge positions in the rasterizing process of the workpiece processing area comprises:
forming a plurality of boundary grid units between the edge position of the workpiece processing area and the lines for dividing grids, and merging the boundary grid units with adjacent grid units or boundary grid units when the area of the boundary grid units is less than half of the area of the grid units; and calculating the total area after merging, and if the total area is more than or equal to twice of the area of the grid unit, terminating the merging.
4. The adaptive control method for thermal deformation in laser etching process according to claim 3, wherein the process of numbering the rasterized processing regions comprises: numbering is done in order from top to bottom, left to right.
5. The adaptive control method for thermal deformation in laser etching process according to claim 1, wherein in step S03, the process for planning the processing sequence comprises: selecting one grid unit as a first processing unit, then calculating the center distance between the selected grid unit and other grid units, and taking the other grid which is farthest away from the center distance of the current grid unit as a second processing unit; and taking the next grid unit with the largest distance from the second processing unit in the unprocessed grid units as a new processing unit, and sequentially finishing the processing sequence planning of all the grid units.
6. The adaptive control method for thermal deformation in laser etching process according to claim 1, wherein in step S04, during the etching process according to the processing sequence, the thermal deformation of each grid cell is monitored, and the processing is performed according to the following steps,
when the thermal deformation exceeds a set threshold, stopping the machining of the current grid unit, and updating the residual machining times of the grid unit;
processing the next grid unit according to the processing sequence, and so on until all grids complete one cycle;
repeatedly traversing the grid units according to the processing sequence, if the residual processing times of the grid units are more than 0, starting the grid unit processing, monitoring the thermal deformation of each grid unit and adjusting the processing grids in real time until the circulation of all the grid units is completed;
and c), repeating the step c), and processing until the processing of all grid units is completed.
7. The adaptive control method for thermal deformation in laser etching process according to claim 6, wherein the monitoring process for thermal deformation of the grid unit comprises: according to the grid unit distribution, marking points are pasted on a non-processing area on the workpiece, and the positions of the marking points are ensured to be distributed along the periphery of an etching area; the method comprises the steps of collecting image signals of a workpiece before processing through a camera, using the image signals as a reference graph, identifying the positions of all marking points, continuously collecting the image signals of the workpiece in the working process, identifying the positions of the marking points, calculating the change of the positions of the marking points, and calculating the deformation amount of the marking point areas according to the change values of the positions of the marking points, so that the thermal deformation amount of each grid area is obtained.
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