CN114914233A - Packaging adhesive structure, electronic device and packaging method of electronic device - Google Patents
Packaging adhesive structure, electronic device and packaging method of electronic device Download PDFInfo
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- CN114914233A CN114914233A CN202110265521.XA CN202110265521A CN114914233A CN 114914233 A CN114914233 A CN 114914233A CN 202110265521 A CN202110265521 A CN 202110265521A CN 114914233 A CN114914233 A CN 114914233A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
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- General Physics & Mathematics (AREA)
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- Adhesives Or Adhesive Processes (AREA)
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- Electrochromic Elements, Electrophoresis, Or Variable Reflection Or Absorption Elements (AREA)
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Abstract
The invention provides a packaging adhesive structure, an electronic device and a packaging method of the electronic device, wherein the packaging adhesive structure comprises a first release layer, a second release layer and a packaging adhesive layer, the packaging adhesive layer is arranged between the first release layer and the second release layer, the thickness of the packaging adhesive layer is 5-1000 micrometers, and the light transmittance of the packaging adhesive layer is 0-100%. The packaging structure of the electronic device provided by the invention can ensure that the electronic device has high brightness. In addition, the invention also provides a packaging method of the electronic device, so that the packaged electronic device has high brightness.
Description
Technical Field
The present invention relates to a package adhesive structure, an electronic device and a method for packaging the electronic device, and more particularly, to a package adhesive structure for an electronic device having a light-emitting diode (LED), an electronic device and a method for packaging the electronic device.
Background
With the evolution and development of electronic devices, electronic devices have become indispensable in modern society. For example, electronic devices with light emitting diodes have been used in any suitable electronic products with light emitting or displaying functions, such as televisions, screens, notebook computers, smart phones, watches, and vehicle displays, to provide more convenient information transmission and display.
In the conventional packaging method of the electronic device having the light emitting diode, a packaging layer disposed on the light emitting diode may be formed by mixing resin and carbon powder and then compression molding, or a polarizer may be disposed on the light emitting diode to achieve a packaging effect. However, the light transmittance of the light emitted from the light emitting diode is greatly reduced by such packaging methods, so that the brightness of the electronic device is greatly reduced. Therefore, it is desirable to provide a package capable of reducing the luminance degradation of the electronic device.
Disclosure of Invention
An object of the present invention is to provide an encapsulant structure for an electronic device with a light emitting diode to encapsulate the electronic device with the light emitting diode, and accordingly to provide an electronic device using an encapsulant adhesive layer in the encapsulant structure and an encapsulation method thereof.
An embodiment of the invention provides an encapsulating adhesive structure, which is used for encapsulating an electronic device with at least one light-emitting diode. The packaging adhesive structure comprises a first release layer, a second release layer and a packaging adhesive layer, wherein the packaging adhesive layer is arranged between the first release layer and the second release layer, the thickness of the packaging adhesive layer is 5 micrometers (mum) to 1000 micrometers, and the light penetration rate of the packaging adhesive layer is 0% to 100%.
Another embodiment of the present invention provides an electronic device, which includes a substrate, at least one light emitting diode, and a first package adhesive layer. The light emitting diode is arranged on the substrate. The first packaging adhesion layer is arranged on the substrate and triggers the light diode, wherein the first light transmittance of the first packaging adhesion layer is 0-100%.
Another embodiment of the present invention provides a method for packaging an electronic device, including: providing a substrate and at least one light emitting diode, wherein the light emitting diode is arranged on the substrate; providing a first packaging adhesive structure which comprises a first release layer, a second release layer and a first packaging adhesive layer, wherein the first packaging adhesive layer is arranged between the first release layer and the second release layer, the thickness of the first packaging adhesive layer is 5-1000 micrometers, and the first light transmittance of the first packaging adhesive layer is 0-100%; tearing off the first release layer of the first packaging adhesive structure, and attaching the first packaging adhesive layer to the substrate and the light-emitting diode through a first pressing process; performing a hard baking curing process to cure the first package adhesive layer; and tearing off the second release layer of the first packaging adhesive structure.
The packaging structure of the electronic device provided by the invention can ensure that the electronic device has high brightness. In addition, the invention also provides a packaging method of the electronic device, so that the packaged electronic device has high brightness. In addition, the invention also correspondingly provides an encapsulation adhesive structure which is suitable for the electronic device and the encapsulation method of the electronic device.
Drawings
Fig. 1 is a schematic cross-sectional view of a package adhesive structure according to an embodiment of the invention.
Fig. 2 is a schematic cross-sectional view of an electronic device according to an embodiment of the invention.
Fig. 3 to 8 are schematic cross-sectional views of structures at different stages in a packaging method of an electronic device according to an embodiment of the invention.
Symbolic illustration in the drawings:
100, an electronic device;
110 is a substrate;
120, a light emitting diode;
120a, EA1a Top surface;
120b, a side wall;
CL is a feature surface;
EA, packaging adhesive layer;
EA1, first package adhesive layer;
EA2, second package adhesive layer;
ES, encapsulating adhesive structure;
ES1, a first encapsulating glue structure;
ES2, a second encapsulating glue structure;
RL1 is the first release layer;
RL2 is the second release layer;
RL3 third release layer;
RL4 fourth release layer.
Detailed Description
In order to make those skilled in the art further understand the present invention, some embodiments of the present invention are specifically illustrated below, and the detailed description of the constituents and intended effects of the present invention are provided in conjunction with the accompanying drawings. It should be noted that the drawings are simplified schematic drawings, and that the range of materials and parameters of key components is described based on the current technology, so that only the components and combinations related to the present invention are shown to provide a clearer description of the basic architecture, implementation method or operation of the present invention. The actual components and layout may be more complex and the range of materials or parameters used may vary as future technologies evolve. In addition, for convenience of illustration, the components shown in the drawings of the present invention may not be drawn to scale, and the details may be adjusted according to design requirements.
In the following description and claims, the terms "including," comprising, "" having, "and the like are open-ended terms, and thus should be construed to mean" including, but not limited to. Thus, when the terms "comprises," "comprising," and/or "having" are used in the description of the present invention, they specify the presence of stated features, regions, steps, operations, and/or components, but do not preclude the presence or addition of one or more other features, regions, steps, operations, and/or components.
It should be understood that in the following specification and claims, when "a B member is formed from C" it is intended that the B member be formed with C or with C, and the formation of the B member does not preclude the presence or use of one or more other features, regions, steps, operations, and/or components.
The use of ordinal numbers such as "first," "second," etc., in the specification and claims to modify a component does not by itself connote any preceding ordinal number of the component(s), nor does it denote the order of a component with another component or method of manufacture, but are used merely to distinguish one element having a certain name from another element having a same name. The claims may not use the same language in the specification and accordingly, a first element in the specification may be a second element in the claims.
It is to be understood that the following illustrative embodiments may be implemented by replacing, recombining, and mixing features of several different embodiments without departing from the spirit of the present invention. Features of the various embodiments may be combined and matched as desired, without departing from the spirit or ambit of the invention.
Referring to fig. 1, fig. 1 is a schematic cross-sectional view of a package adhesive structure according to an embodiment of the invention. It should be noted that the encapsulating adhesive structure ES of the present invention is used for encapsulating electronic devices. For example, in the present embodiment, the encapsulating adhesive structure ES can be used for encapsulating an electronic device having at least one light emitting diode, wherein the light emitting diode can be an inorganic light-emitting diode (inorganic light-emitting diode), an organic light-emitting diode (OLED), a quantum dot light-emitting diode (QLED), or other suitable light emitting diodes, but not limited thereto.
As shown in fig. 1, the package adhesive structure ES of the present embodiment includes a first release layer RL1, a second release layer RL2, and a package adhesive layer EA, wherein the package adhesive layer EA is disposed between the first release layer RL1 and the second release layer RL 2. In some embodiments, the first release layer RL1 and the second release layer RL2 can contact the encapsulation adhesive layer EA by pressing, so that the encapsulation adhesive layer EA is disposed between the first release layer RL1 and the second release layer RL2, but not limited thereto. The first release layer RL1 and the second release layer RL2 can be used to protect the encapsulation adhesive layer EA, and when the encapsulation adhesive structure ES is used, the first release layer RL1 and the second release layer RL2 can be torn off without damaging the encapsulation adhesive layer EA.
The first release layer RL1 and the second release layer RL2 can be release films or release papers, and can include required materials according to requirements. For example, the first release layer RL1 and the second release layer RL2 may each include polyethylene terephthalate (PET), Polyethylene (PE), polypropylene (PP), a release agent, other suitable materials, or a combination thereof. In some embodiments, the first release layer RL1 and the second release layer RL2 can selectively include particles, wherein the particles can be made of carbon black, polypropylene, polyethylene, polymethyl methacrylate (poly (methyl methacrylate), PMMA), silicon dioxide, aluminum oxide, other suitable materials, or a combination thereof, and the particle size of the particles can be, for example, 0.1 micrometer (μm) to 100 micrometers, but not limited thereto. It should be noted that, when the first release layer RL1 (and/or the second release layer RL 2) includes particles with proper particle size, the first release layer RL1 (and/or the second release layer RL 2) can improve the surface racemization and roughness of the contacted encapsulation adhesive layer EA when the first release layer RL1 (and/or the second release layer RL 2) is pressed (e.g., a pressing process performed when the encapsulation adhesive structure ES is manufactured and/or a pressing process performed when the encapsulation adhesive structure ES is used).
The thickness and center line roughness average (Ra) of the first release layer RL1 and the thickness and center line roughness average of the second release layer RL2 can be designed according to requirements. In some embodiments, the thickness of the first release layer RL1 may be 30 micrometers to 200 micrometers, and the center line average roughness of the surface of the first release layer RL1 in contact with the encapsulation adhesive layer EA may be 0.0001 micrometers to 100 micrometers, but is not limited thereto. In some embodiments, the thickness of the second release layer RL2 may be 10 micrometers to 300 micrometers, and the center line average roughness of the surface of the second release layer RL2 in contact with the encapsulation adhesive layer EA may be 0.0001 micrometers to 10 micrometers, but is not limited thereto. It should be noted that when the first release layer RL1 (and/or the second release layer RL 2) has a proper center line average roughness, the surface racemization optical property and roughness of the contacted package adhesive layer EA can be improved.
Through the design, the protection of the first release layer RL1 and the second release layer RL2 on the encapsulation adhesive layer EA can be improved, and the damage of the first release layer RL1 and the second release layer RL2 on the encapsulation adhesive layer EA when being torn off can be reduced.
The encapsulation adhesive layer EA may be solid, but not limited thereto. The package adhesive layer EA may optionally have other characteristics besides the adhesive property, so as to improve the package effect of the electronic device. In some embodiments, the package adhesive layer EA may have a good hole filling capability to reduce holes and bubbles, and increase the adhesion area between the package adhesive layer EA and the adhered components and/or structures, thereby increasing the adhesion effect, but not limited thereto. In some embodiments, the encapsulation adhesive layer EA may have high adhesion to, for example, a glass surface and/or a metal surface to obtain a good encapsulation effect, but is not limited thereto. In some embodiments, the encapsulation adhesive layer EA may have high water resistance (e.g., high density) to reduce adverse effects of certain components and/or structures on moisture, but not limited thereto. In some embodiments, the encapsulation adhesive layer EA may have high temperature resistance to improve the high temperature resistance of the electronic device (e.g., 300 ℃ to 350 ℃). In some embodiments, the encapsulation adhesive layer EA may have a high resistivity, for example, the resistivity thereof may be greater than or equal to 1013 Ω m, but not limited thereto. In some embodiments, the light transmittance of the encapsulant adhesive layer EA may be 0% to 100%, 0% to 5%, 0% to 30%, 0% to 60%, 5% to 30%, 5% to 60%, 5% to 100%, 30% to 60%, 30% to 100%, or 60% to 100% (the transmittance of 5% to 60% may be defined as a translucent film, and the transmittance of 60% to 100% may be defined as a highly transparent film), but not limited thereto, depending on the usage requirement and the installation position of the encapsulant adhesive layer EA.
The encapsulation adhesive EA may have a suitable hardness to protect components and/or structures in the encapsulated electronic device. For example, in some embodiments, the encapsulation adhesive layer EA may have a hardness, measured by Shore hardness tester (Shore hardness tester), of greater than or equal to 10, greater than or equal to 20, or greater than or equal to 40, but not limited thereto, in the case that the encapsulation adhesive layer EA is not subjected to the heating process. For example, in some embodiments, after the encapsulation adhesive EA is subjected to a hard bake curing process (e.g., the encapsulation adhesive EA is heated at a temperature of 160 ℃ or more for 60 minutes or more), the hardness of the encapsulation adhesive EA measured by a shore d hardness meter may be greater than or equal to 40, but not limited thereto.
The encapsulation adhesive layer EA may be removed by, for example, an etching process, and thus, the encapsulation adhesive layer EA may be easily subjected to a patterning process. For example, the encapsulation adhesive layer EA may be patterned by a dry etching process, for example, but not limited to, an etching process such as plasma (plasma) etching the encapsulation adhesive layer EA.
The encapsulation adhesive layer EA may comprise any desired material according to requirements (e.g., the above-mentioned desired characteristics or other requirements), for example, the encapsulation adhesive layer EA may comprise epoxy (epoxy resin), Polyurethane (PU), Polyimide (PI), acrylic (acrylic resin), other suitable materials or combinations thereof, but is not limited thereto. The encapsulation adhesive layer EA may have a thickness of 5 to 1000 micrometers according to requirements (e.g., the above-mentioned required characteristics or other requirements), but not limited thereto.
When the package adhesive structure ES is used for packaging an electronic device, the package adhesive layer EA in the package adhesive structure ES adheres to a specific component and/or structure in the electronic device to package the electronic device and protect the component and/or structure in the electronic device. In the application of the encapsulant structure ES, the first release layer RL1 and the second release layer RL2 can be removed during the application of the encapsulant structure ES (the first release layer RL1 and the second release layer RL2 can be removed in the same or different steps), and the encapsulant adhesion layer EA can be adhered to a specific component and/or structure of the electronic device to encapsulate the electronic device and protect the component and/or structure of the electronic device. The detailed package structure and method of the electronic device will be described in detail below.
Referring to fig. 2, fig. 2 is a schematic cross-sectional view of an electronic device according to an embodiment of the invention. As shown in fig. 2, the electronic device 100 of the embodiment includes a substrate 110, at least one light emitting diode 120, and a first package adhesive EA1, wherein the light emitting diode 120 is disposed on the substrate 110, and the first package adhesive EA1 is disposed on the substrate 110 and triggers the light emitting diode 120. In addition, the electronic device 100 may further optionally include a second package adhesive layer EA2 disposed on the first package adhesive layer EA1 and the light emitting diode 120, such that the light emitting diode 120 and the first package adhesive layer EA1 are located between the substrate 110 and the second package adhesive layer EA2, but not limited thereto.
The substrate 110 may be used to carry a plurality of components and structures, and the substrate 110 may comprise any suitable material, either as a flexible substrate or a rigid substrate. For example, the substrate 110 may include glass, quartz, sapphire, polyimide, polyethylene terephthalate, other suitable materials, or a combination thereof, but is not limited thereto.
The led 120 may emit light for illuminating and/or displaying a picture, for example. For example, the light emitting diode 120 may provide the emitted light with a corresponding light intensity according to the received voltage and/or current (e.g., a gray scale signal), thereby displaying the image. That is, the intensity of the light generated by each led 120 is related to the gray level of the area corresponding to the led 120 in the display frame.
The leds 120 can emit light of any suitable color, and the colors of the light emitted by the leds 120 can be the same or different. For example, the light emitting diodes 120 of the present embodiment may include a red light emitting diode emitting red light, a green light emitting diode emitting green light, and a blue light emitting diode emitting blue light, but not limited thereto. For example, the led 120 can emit white light, and the white light can be selectively converted into any desired color by any suitable method, but not limited thereto. For example, the led 120 can emit blue light, and the blue light can be selectively converted into any desired color by any suitable method, but not limited thereto.
In the present embodiment, the light emitting diode 120 may be, for example, an inorganic light emitting diode, an organic light emitting diode, a quantum dot light emitting diode, or other suitable light emitting diodes, but not limited thereto. The leds 120 may be formed in any suitable manner. For example, the light emitting diode 120 may be formed on the substrate 110 by a semiconductor process (which may include, for example, a deposition process, a coating process, an etching process, and/or a photolithography process), a bonding process, a transfer process, other suitable processes, or a combination thereof, but is not limited thereto.
The first package adhesive EA1 and the optional second package adhesive EA2 are used to package the electronic device 100 to protect components and/or structures in the electronic device 100, such as the led 120. The first package adhesive EA1 and the second package adhesive EA2 can be formed by the package adhesive EA of the ES with different package adhesive structures through a hard baking curing process, so the characteristics and materials of the first package adhesive EA1 and the second package adhesive EA2 can refer to the contents of the package adhesive EA of the ES with package adhesive structures, and are not repeated. Accordingly, the first light transmittance of the first encapsulant adhesive layer EA1 and the second light transmittance of the second encapsulant adhesive layer EA2 may be 0% to 100%, 0% to 5%, 0% to 30%, 0% to 60%, 5% to 30%, 5% to 60%, 5% to 100%, 30% to 60%, 30% to 100%, or 60% to 100%, respectively, but not limited thereto. It should be noted that, since the first package adhesive layer EA1 and the optional second package adhesive layer EA2 in the electronic device 100 have been subjected to a hard bake process (for example, the process temperature may be above 160 ℃, and the process time may be above 60 minutes), the hardness of the first package adhesive layer EA1 and the second package adhesive layer EA2 measured by the shore hardness meter may be greater than or equal to 40, but not limited thereto.
As shown in fig. 2, the first encapsulation adhesive EA1 of the embodiment is disposed on at least one side of the led 120, and the second encapsulation adhesive EA2 is disposed on the first encapsulation adhesive EA1 and the led 120. For example, in fig. 2, the first package adhesive layer EA1 may contact the sidewall 120b of the led 120, and the second package adhesive layer EA2 may contact the top surface 120a of the led 120, but not limited thereto.
In fig. 2, since the led 120 has a specific height (for example, the height of the led 120 of an embodiment may be about 8 μm, but is not limited thereto), and the first package adhesive layer EA1 may fill the space between two adjacent leds 120, the disposition of the first package adhesive layer EA1 may improve the flatness and facilitate the formation of the subsequent layers and/or structures formed on the led 120. In some embodiments, the top surface 120a of the led 120 and the top surface EA1a of the first package adhesive layer EA1 may be formed as (defined as) a feature surface CL, and the center line average roughness of the feature surface CL may be, for example, less than 2 microns (e.g., 0.046 microns), but is not limited thereto. In some embodiments, the difference between the highest point and the lowest point of the feature surface CL may be less than or equal to 2 microns, but not limited thereto. It should be noted that, for example, the top surface EA1a of the first package adhesive layer EA1 of some embodiments may be lower than the top surface 120a of the light emitting diode 120, so that the second package adhesive layer EA2 may also contact the sidewall 120b of the light emitting diode 120, but not limited thereto.
In addition, in fig. 2, since the first encapsulant adhesive layer EA1 may fill a space between two adjacent light emitting diodes 120, if the first light transmittance of the first encapsulant adhesive layer EA1 is low, the first encapsulant adhesive layer EA1 may reduce interference of light emitted by the two adjacent light emitting diodes 120 in a lateral direction, so as to improve a light emitting quality of the electronic device 100. For example, in some embodiments, the first light transmittance of the first encapsulant adhesive EA1 may be less than or equal to 5%, or less than or equal to 30%, or the first light transmittance of the first encapsulant adhesive EA1 may be 0%, but not limited thereto.
In addition, if the first package adhesive layer EA1 has a high light absorption rate (for example, the first package adhesive layer EA1 is black), the interference of the light emitted by two adjacent light emitting diodes 120 in the lateral direction can be reduced, and the reflected light of the external light after being emitted to the electronic device 100 can be reduced, so as to improve the use quality of the electronic device 100.
In the embodiment, since the second package adhesive layer EA2 is disposed on the top surface 120a of the light emitting diode 120, and the light emitted by the light emitting diode 120 needs to pass through the second package adhesive layer EA2 for illumination and/or displaying a picture (for example, the top surface 120a of the light emitting diode 120 can be used as a light emitting surface of the light emitting diode 120), the second light transmittance of the second package adhesive layer EA2 is not low. For example, the second light transmittance of the second encapsulant adhesive layer EA2 may be 5% to 100%, 5% to 30%, 5% to 60%, 30% to 100%, 60% to 100%, 80% to 100%, or 90% to 100%, but not limited thereto. In some embodiments, the second light transmittance of the second encapsulant adhesive EA2 may be greater than the first light transmittance of the first encapsulant adhesive EA1, but not limited thereto. It should be noted that, when the second light transmittance of the second package adhesive layer EA2 is higher, the brightness of the electronic device 100 of the embodiment is higher.
In addition, if the first package adhesive layer EA1 and the second package adhesive layer EA2 have proper surface racemization degree and roughness, the light quality provided by the electronic device 100 (for example, scattering the emitted light of the light emitting diode 120) can be improved, but not limited thereto.
The electronic device 100 may further include any required components and/or structures according to requirements, such that the electronic device 100 may have better quality and function.
According to the above, the package structure of the electronic device 100 provided by the present invention can make the electronic device 100 have high brightness. In addition, in some embodiments, the first package adhesive layer EA1 may fill a space between two adjacent light emitting diodes 120 to improve the flatness. In addition, in some embodiments, if the first light transmittance of the first encapsulant adhesive EA1 is low, the first encapsulant adhesive EA1 may reduce interference between light emitted by two adjacent light emitting diodes 120 in a lateral direction, and/or the first encapsulant adhesive EA1 may reduce reflection of external light after being emitted to the electronic device 100, so as to improve the quality of the electronic device 100. In some embodiments, the first package adhesive layer EA1 and the second package adhesive layer EA2 with appropriate surface racemization optical property and roughness can improve the quality of the electronic device 100.
Referring to fig. 3 to 8 and fig. 2 at the same time, fig. 3 to 8 are schematic cross-sectional views of structures at different stages in a packaging method of an electronic device according to an embodiment of the invention, and fig. 2 is a schematic cross-sectional view of a structure of an electronic device after the packaging method is completed according to an embodiment of the invention. It should be noted that the packaging methods and processes shown in fig. 2 to fig. 8 and described below are only examples, and are not limited thereto. In some embodiments, the packaging methods of fig. 2-8 and described below may be modified, e.g., any steps in the methods may be performed in a different order, any steps may be performed simultaneously, changes may be made to any steps (e.g., selective deletion of portions of steps), and/or other steps may be performed before, after, or between any steps.
As shown in fig. 3, in the packaging method of the electronic device 100, first, a substrate 110 and a light emitting diode 120 disposed on the substrate 110 are provided, and a first packaging adhesive structure ES1 is provided, wherein the first packaging adhesive structure ES1 includes a first release layer RL1, a second release layer RL2 and a first packaging adhesive layer EA1 (which is not cured), and a first packaging adhesive layer EA1 is disposed between the first release layer RL1 and the second release layer RL2, wherein the thickness of the first packaging adhesive layer EA1 is 5 to 1000 micrometers, and the first light transmittance of the first packaging adhesive layer EA1 is 0 to 100%. For details of the substrate 110 and the light emitting diode 120, reference may be made to the substrate 110 and the light emitting diode 120 shown in fig. 2, which are not repeated herein. The details of the first encapsulant structure ES1 can refer to the encapsulant structure ES shown in fig. 1 and described above, and therefore, the first release layer RL1, the second release layer RL2, and the first encapsulant adhesion layer EA1 of the first encapsulant structure ES1 can refer to the first release layer RL1, the second release layer RL2, and the encapsulant adhesion layer EA of the encapsulant structure ES shown in fig. 1 and described above, respectively, and will not be described again.
It should be noted that, when providing the first encapsulant structure ES1, the first encapsulant structure ES1 may be selectively cut to make the size of the first encapsulant structure ES1 suitable for the encapsulation method of the electronic device 100.
As shown in fig. 3 and 4, the first release layer RL1 (see fig. 3) of the first package adhesive structure ES1 is removed, and the first package adhesive layer EA1 is attached to the substrate 110 and the light emitting diode 120 (see fig. 4) by a first pressing process. The first pressing process can be performed by a pressing machine, and the process parameters of the first pressing process can be designed according to the requirements. For example, in the first pressing process, the pressing pressure may be 0.5 to 10 kilograms per square centimeter (kg/cm) 2 ) The process temperature can be 70 ℃ to 160 ℃, during the processThe time may be 1 to 10 minutes (for example, the pressing pressure may be 1 kg/cm, the processing temperature may be 100 ℃, and the processing time may be 3 minutes), and the processing pressure may be vacuum, but not limited thereto. It should be noted that, in fig. 4, after the first pressing process, the top surface EA1a of the first package adhesive layer EA1 may be higher than the top surface 120a of the light emitting diode 120, but not limited thereto.
It should be noted that, during the first pressing process, the pressing pressure of the first pressing process can simultaneously enhance the adhesion between the second release layer RL2 and the first package adhesive layer EA 1. In some embodiments, if the second release layer RL2 has a sufficient roughness and/or particles with a suitable particle size, the surface of the second release layer RL2 has a concave-convex structure, and the concave-convex structure of the surface of the second release layer RL2 can be transferred onto the top surface EA1a of the first package adhesive layer EA1 by the pressing pressure of the first pressing process, so that the racemization property and the roughness of the top surface EA1a of the first package adhesive layer EA1 are improved.
It should be noted that, after the first pressing process is performed, the structure after the first pressing process may be optionally left at normal temperature and pressure (for example, left for 5 to 10 minutes) to cool the structure.
As shown in fig. 5, the second release layer RL2 of the first encapsulant structure ES1 is removed to expose the top surface EA1a of the first encapsulant adhesive EA 1.
As shown in fig. 6, an etching process is performed on the first package adhesive layer EA1 to remove a portion of the first package adhesive layer EA1 and expose the top surface 120a of the light emitting diode 120 (i.e., form the feature surface CL). That is, an unnecessary portion of the first package adhesive EA1 may be removed by an etching process. The etching process may be any suitable etching technique, such as a dry etching process. For example, the etching process may etch the first package adhesive layer EA1 by plasma, but not limited thereto. For example, the plasma used in the etching process may be carbon tetrafluoride (CF) 4 ) Plasma or any suitable plasma, but not limited thereto.
As shown in fig. 7 and 8, a second package adhesive EA2 is formed on the first package adhesive EA1 and the light emitting diode 120. In detail, as shown in fig. 7, a second encapsulant structure ES2 is provided, wherein the second encapsulant structure ES2 includes a third release layer RL3, a fourth release layer RL4 and a second encapsulant adhesive EA2 (which is not cured), the second encapsulant adhesive EA2 is disposed between the third release layer RL3 and the fourth release layer RL4, wherein the thickness of the second encapsulant adhesive EA2 may be 5 micrometers to 1000 micrometers, and the second light transmittance of the second encapsulant adhesive EA2 may be 0% to 100%. The details of the second encapsulant structure ES2 can refer to the encapsulant structure ES shown in fig. 1 and above, and therefore, the third release layer RL3, the fourth release layer RL4 and the second encapsulant adhesion layer EA2 of the second encapsulant structure ES2 can refer to the first release layer RL1, the second release layer RL2 and the encapsulant adhesion layer EA of the encapsulant structure ES shown in fig. 1 and above, respectively, and will not be described again here. It should be noted that the second package adhesive EA2 of the present embodiment may be different from the first package adhesive EA 1. It should be noted that, when providing the second encapsulant structure ES2, the second encapsulant structure ES2 may be selectively cut, so that the size of the second encapsulant structure ES2 is suitable for the encapsulation method of the electronic device 100.
As shown in fig. 7 and 8, the third release layer RL3 of the second encapsulant structure ES2 is removed (as shown in fig. 7), and the second encapsulant adhesive layer EA2 is attached to the first encapsulant adhesive layer EA1 and the light emitting diode 120 by a second pressing process (as shown in fig. 8). The second pressing process can be performed by the pressing machine, and the process parameters of the second pressing process can be designed according to the requirements. For example, in the second pressing process, the pressing pressure may be 0.5 to 10 kg/sq cm, the process temperature may be 70 ℃ to 160 ℃, the process time may be 1 to 10 minutes (for example, the pressing pressure may be 1 kg/sq cm, the process temperature may be 130 ℃, and the process time may be 3 minutes), and the process pressure may be vacuum, but not limited thereto. It should be noted that the press machine used in the second press process may be the same as or different from the press machine used in the first press process.
Similarly, when the second bonding process is performed, the bonding pressure of the second bonding process can simultaneously enhance the adhesion between the fourth release layer RL4 and the second package adhesive layer EA 2. In some embodiments, if the fourth release layer RL4 has a sufficient roughness and/or particles with a suitable particle size, the surface of the fourth release layer RL4 has a concave-convex structure, and the concave-convex structure of the surface of the fourth release layer RL4 can be transferred onto the top surface of the second package adhesive layer EA2 by the pressing pressure of the second pressing process, so that the racemization property and the roughness of the top surface of the second package adhesive layer EA2 are improved.
Then, as shown in fig. 8, a hard bake curing process is performed to cure the first package adhesive EA1 and the second package adhesive EA 2. For example, in the hard baking and curing process, the process temperature may be above 160 ℃, and the process time may be above 60 minutes, but not limited thereto.
Finally, as shown in fig. 2, after the hard bake curing process is performed, the fourth release layer RL4 of the second encapsulant structure ES2 is removed to complete the encapsulation of the electronic device 100. It should be noted that, the components and the structure of the electronic device 100 after the packaging is completed may refer to the content of the electronic device 100 and fig. 2 described above, and are not repeated herein.
According to the above-mentioned packaging method, the second release layer RL2 of the first packaging adhesive structure ES1 is removed after the first pressing process and before the hard baking and curing process, but not limited thereto. According to the above-mentioned packaging method, after the second release layer RL2 of the first packaging adhesive structure ES1 is removed and before the hard baking curing process is performed, an etching process is performed on the first packaging adhesive layer EA1, but not limited thereto. According to the above-mentioned packaging method, after the etching process and before the hard bake curing process, the second packaging adhesive layer EA2 is formed on the first packaging adhesive layer EA1 and the light emitting diode 120, but not limited thereto.
In addition, the invention provides an electronic device according to another embodiment, wherein the electronic device does not include the second package adhesive layer EA2 compared to fig. 2. Optionally, the first encapsulation adhesive EA1 may cover the light emitting diode 120 (i.e., the top surface EA1a of the first encapsulation adhesive EA1 may be higher than the top surface 120a of the light emitting diode 120). For example, the first encapsulant adhesive layer EA1 may contact the sidewall 120b and the top surface 120a of the led 120, but not limited thereto. When the first encapsulant adhesive EA1 covers the light emitting diode 120, the first light transmittance of the first encapsulant adhesive EA1 is not low. For example, the first light transmittance of the first encapsulant adhesive layer EA1 may be 5% to 100%, 5% to 30%, 5% to 60%, 30% to 100%, 60% to 100%, 80% to 100%, or 90% to 100%, but not limited thereto. It should be noted that, in the case that the first package adhesive layer EA1 covers the light emitting diode 120, the higher the first light transmittance of the first package adhesive layer EA1 is, the higher the brightness of the electronic device of the embodiment is.
In the method for encapsulating the electronic device without the second encapsulant adhesive EA2, after the first encapsulant adhesive EA1 is attached to the substrate 110 and the light emitting diode 120 (as shown in fig. 4) by the first pressing process, a hard baking curing process may be performed to cure the first encapsulant adhesive EA 1. Then, the second release layer RL2 of the first encapsulation adhesive structure ES1 is torn off to complete the encapsulation of the electronic device.
In summary, the package structure of the electronic device provided by the invention can make the electronic device have high brightness. In addition, the invention also provides a packaging method of the electronic device, so that the packaged electronic device has high brightness. In addition, the invention also correspondingly provides an encapsulation adhesive structure which is suitable for the electronic device and the encapsulation method of the electronic device.
The above description is only a preferred embodiment of the present invention, and all the equivalent changes and modifications made according to the claims of the present invention should be covered by the present invention.
Claims (20)
1. An encapsulant structure for encapsulating an electronic device having at least one light emitting diode, the encapsulant structure comprising:
a first release layer and a second release layer; and
and the packaging adhesive layer is arranged between the first release layer and the second release layer, wherein the thickness of the packaging adhesive layer is 5-1000 microns, and the light transmittance of the packaging adhesive layer is 0-100%.
2. The package adhesive structure of claim 1, wherein the package adhesive layer has a hardness of 10 or more as measured in shore d hardness in the absence of a heating process.
3. The package adhesive structure of claim 1, wherein the package adhesive has a hardness of greater than or equal to 40 measured in shore d after the package adhesive is heated at a temperature of greater than 160 ℃ for greater than 60 minutes.
4. The package adhesive structure of claim 1 wherein the package adhesive layer comprises epoxy, polyurethane, polyimide, acrylic, or combinations thereof.
5. The package adhesive structure of claim 1, wherein the center line average roughness of a surface of the first release layer in contact with the package adhesive layer is 0.0001 μm to 100 μm, and the center line average roughness of a surface of the second release layer in contact with the package adhesive layer is 0.0001 μm to 10 μm.
6. The package adhesive structure of claim 1, wherein the first release layer has a thickness of 30 to 200 microns and the second release layer has a thickness of 10 to 300 microns.
7. An electronic device, comprising:
a substrate;
at least one light emitting diode disposed on the substrate; and
a first packaging adhesion layer arranged on the substrate and contacting the light emitting diode, wherein a first light transmittance of the first packaging adhesion layer is 0% to 100%.
8. The electronic device of claim 7, wherein the first encapsulating adhesive layer has a hardness greater than or equal to 40 as measured by Shore D hardness.
9. The electronic device of claim 7, further comprising a second packaging adhesive layer, wherein the second packaging adhesive layer is disposed on the first packaging adhesive layer and the light emitting diode, the light emitting diode and the first packaging adhesive layer are disposed between the substrate and the second packaging adhesive layer, the first packaging adhesive layer contacts the sidewall of the light emitting diode, the second packaging adhesive layer contacts the top surface of the light emitting diode, and a second light transmittance of the second packaging adhesive layer is greater than the first light transmittance of the first packaging adhesive layer.
10. The electronic device of claim 9, wherein the first light transmittance of the first encapsulant adhesive layer is 0% and the second light transmittance of the second encapsulant adhesive layer is 5% to 100%.
11. The electronic device of claim 7, wherein a feature surface is formed by the top surface of the light emitting diode and the top surface of the first encapsulant adhesive layer, the feature surface having a centerline average roughness of less than 2 microns.
12. The electronic device of claim 7, wherein the first package adhesive layer comprises epoxy, polyurethane, polyimide, acrylic, or a combination thereof.
13. A method of packaging an electronic device, comprising:
providing a substrate and at least one light emitting diode, wherein the light emitting diode is arranged on the substrate;
providing a first encapsulant structure comprising:
a first release layer and a second release layer; and
a first packaging adhesive layer arranged between the first release layer and the second release layer, wherein the thickness of the first packaging adhesive layer is 5-1000 microns, and the first light transmittance of the first packaging adhesive layer is 0-100%;
tearing off the first release layer of the first packaging adhesive structure, and attaching the first packaging adhesive layer to the substrate and the light-emitting diode through a first pressing process;
performing a hard baking curing process to cure the first packaging adhesive layer; and
and tearing off the second release layer of the first packaging adhesive structure.
14. The method of claim 13, wherein the second release layer of the first encapsulant structure is removed after the first lamination process and before the hard bake curing process, and the method further comprises:
after the second release layer of the first package adhesive structure is peeled off and before the hard baking curing process is performed, an etching process is performed on the first package adhesive layer to expose the top surface of the light emitting diode.
15. The method of claim 14, wherein the etching process etches the first package adhesive layer with a plasma.
16. The method of packaging of claim 14, further comprising:
after the etching process and before the hard baking curing process, a second packaging adhesive layer is formed on the first packaging adhesive layer and the light emitting diode, wherein a second light transmittance of the second packaging adhesive layer is greater than the first light transmittance of the first packaging adhesive layer.
17. The packaging method of claim 16, wherein the first light transmittance of the first packaging adhesive layer is 0% and the second light transmittance of the second packaging adhesive layer is 5% to 100%.
18. The method of claim 16, wherein the step of forming the second package adhesive on the first package adhesive and the light emitting diode comprises:
providing a second packaging adhesive structure, wherein the second packaging adhesive structure comprises a third release layer, a fourth release layer and a second packaging adhesive layer, and the second packaging adhesive layer is arranged between the third release layer and the fourth release layer; and
tearing off the third release layer of the second packaging adhesive structure, and attaching the second packaging adhesive layer to the first packaging adhesive layer and the light-emitting diode through a second pressing process; and is
The packaging method further comprises the following steps:
after the hard baking curing process, the fourth release layer of the second packaging adhesive structure is torn off.
19. The method of claim 18, wherein in the second bonding process, the bonding pressure is 0.5 to 10 kg/cm, the process temperature is 70 ℃ to 160 ℃, and the process time is 1 to 10 minutes.
20. The method of claim 13, wherein in the first pressing process, the pressing pressure is 0.5 to 10 kg/cm, the process temperature is 70 ℃ to 160 ℃, and the process time is 1 to 10 minutes.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW110104754A TWI777406B (en) | 2021-02-08 | 2021-02-08 | Encapsulant structure, electronic device and encapsulating method of electronic device |
| TW110104754 | 2021-02-08 |
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| Publication Number | Publication Date |
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| CN114914233A true CN114914233A (en) | 2022-08-16 |
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| CN202110265521.XA Pending CN114914233A (en) | 2021-02-08 | 2021-03-11 | Packaging adhesive structure, electronic device and packaging method of electronic device |
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| CN (1) | CN114914233A (en) |
| TW (1) | TWI777406B (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP4799883B2 (en) * | 2005-03-01 | 2011-10-26 | 日東電工株式会社 | Epoxy resin composition cured body, method for producing the same, and optical semiconductor device using the same |
| EP2781568B1 (en) * | 2011-11-14 | 2018-02-21 | LG Chem, Ltd. | Adhesive film and method for encapsulating organic electronic device using same |
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- 2021-03-11 CN CN202110265521.XA patent/CN114914233A/en active Pending
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| TW202231812A (en) | 2022-08-16 |
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