CN114899304A - Invisible pressure sensor and manufacturing method thereof - Google Patents

Invisible pressure sensor and manufacturing method thereof Download PDF

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Publication number
CN114899304A
CN114899304A CN202110102381.4A CN202110102381A CN114899304A CN 114899304 A CN114899304 A CN 114899304A CN 202110102381 A CN202110102381 A CN 202110102381A CN 114899304 A CN114899304 A CN 114899304A
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semiconductor
nano
array
semiconductor nano
transparent electrode
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赵宇坤
陆书龙
张建亚
邢志伟
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Suzhou Institute of Nano Tech and Nano Bionics of CAS
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Suzhou Institute of Nano Tech and Nano Bionics of CAS
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/30—Piezoelectric or electrostrictive devices with mechanical input and electrical output, e.g. functioning as generators or sensors
    • H10N30/302—Sensors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/85—Piezoelectric or electrostrictive active materials
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    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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Abstract

The invention discloses a method for manufacturing an invisible pressure sensor, which comprises the following steps: forming a semiconductor nano-pillar array with piezoelectric characteristics, and filling a transparent substrate in the semiconductor nano-pillar array; transparent electrode layers are respectively arranged on two opposite sides of the semiconductor nano-pillar array, so that each semiconductor nano-pillar is electrically connected with the two transparent electrode layers respectively. The invention also discloses an invisible pressure sensor. The invention solves the problem that the semiconductor piezoelectric sensor is not easy to endow with light transmission.

Description

Invisible pressure sensor and manufacturing method thereof
Technical Field
The invention relates to the technical field of pressure sensors, in particular to an invisible flexible pressure sensor.
Background
Stealth, commonly known as "invisible", while high transparency also achieves the stealth effect. In recent years, the stealth technology has attracted more and more attention all over the world, can be applied to stealth airplanes, stealth clothes and the like, and is a high-precision technology required by dreams. In order to realize stealth, many researchers introduce negative refractive index materials, and hope that the materials are highly transparent through complex electromagnetic wave regulation. Although the technology has wide application prospect, the difficulty is extremely high, and a long time is still needed for the real application. Therefore, stealth technology remains a worldwide difficulty for a long time in the future.
The GaN (commonly known as gallium nitride) based semiconductor material has the advantages of wide band gap, high thermal conductivity, stable physicochemical property, strong radiation resistance and the like, and the band gap is continuously adjustable. On the other hand, at present, there is no definition standard for stealth semiconductor devices, and another synonym of stealth is transparent, so that stealth can be roughly defined as a high transparency state. As described in the prior patent (application No.: 202010517504.6): in the visible light range (380nm-400nm), the semiconductor device can be considered as invisible when the minimum transmittance is more than 90%, and is semi-invisible between 50% and 90%.
The GaN-based invisible piezoelectric sensor has a huge application prospect, can be applied to the fields of intelligent skin, human body function detection and the like, and can improve the concealment of a detector if the invisible detector is developed. Therefore, the GaN-based invisible piezoelectric sensor has high application value. However, the difficulty in manufacturing the GaN-based invisible piezoelectric sensor is relatively high. The reason for this is that it is difficult for the current semiconductor device to obtain a light-transmitting property, and some two-dimensional materials (such as graphene) have a transparent (invisible) property, but cannot be used independently as a piezoelectric sensor. Therefore, the manufacturing process of the current invisible pressure sensor has a great limitation.
Disclosure of Invention
Aiming at the defects in the prior art, the invention adopts the following technical scheme:
in one aspect of the present invention, a method for manufacturing a stealth pressure sensor is provided, the method comprising:
forming a semiconductor nano-pillar array with piezoelectric characteristics, and filling a transparent matrix in the semiconductor nano-pillar array;
transparent electrode layers are respectively arranged on two opposite sides of the semiconductor nano-pillar array, so that each semiconductor nano-pillar is electrically connected with the two transparent electrode layers respectively.
Preferably, the method of forming a semiconductor nanopillar array having piezoelectric properties and filling a transparent matrix in the semiconductor nanopillar array includes:
growing a gallium nitride-based semiconductor material on the epitaxial thin film layer in an array epitaxial manner to form a plurality of semiconductor nano-pillars arranged in an array manner so as to obtain a semiconductor nano-pillar array;
injecting a transparent matrix in the array of semiconductor nanopillars such that side surfaces of the plurality of semiconductor nanopillars are immersed in the transparent matrix.
Preferably, the transparent matrix may comprise quantum dots having piezoelectric properties.
Preferably, the method for respectively disposing transparent electrode layers on two opposite sides of the semiconductor nano-pillar array to electrically connect each of the semiconductor nano-pillars with two of the transparent electrode layers includes:
forming a two-dimensional material layer on one side of the epitaxial growth direction of the semiconductor nano-pillar array to form the transparent electrode layer, wherein the nano-pillars are in direct contact with the electrode layer;
forming another transparent electrode layer on one side of the nano-pillar array in the opposite direction of the epitaxial growth; the epitaxial thin film layer with good conductivity and transparency can be directly used as the other transparent electrode layer; or forming a two-dimensional material layer on one side of the epitaxial thin film layer in the opposite direction to the epitaxial growth direction to form another transparent electrode layer; or removing the epitaxial thin film layer, and then forming a two-dimensional material layer on one side of the opposite direction of the nano-pillar epitaxial growth to form another transparent electrode layer.
Preferably, the method for array epitaxial growth of gallium nitride-based semiconductor material on the epitaxial thin film layer to form a plurality of semiconductor nano-pillars arranged in an array to obtain the semiconductor nano-pillar array comprises:
epitaxially growing gallium nitride nano columns in an array on the epitaxial thin film layer;
and epitaxially growing indium gallium nitride nano columns on each gallium nitride nano column, or alternatively growing aluminum gallium nitride nano columns and indium gallium nitride nano columns, or alternatively growing gallium nitride nano columns and indium gallium nitride nano columns.
Preferably, the two-dimensional material layer is made of one of graphene, boron nitride, molybdenum disulfide and tungsten disulfide, and the thickness of the two-dimensional material layer is less than 5 nm.
The invention provides a stealth pressure sensor, which comprises two transparent electrode layers opposite to each other, wherein a semiconductor nano-pillar array is arranged between the two transparent electrode layers, the semiconductor nano-pillar array comprises a plurality of semiconductor nano-pillars with piezoelectric characteristics, and the semiconductor nano-pillars are vertical to the transparent electrode layers; transparent substrates are filled in the semiconductor nano-pillar array, and each semiconductor nano-pillar is electrically connected with the two transparent electrode layers respectively.
Preferably, the epitaxial thin film layer has good conductivity and is not easy to be corroded electrochemically, and one end in the epitaxial growth direction is in direct contact with the nano-pillar array; the epitaxial thin film layer directly contacts with a sacrificial layer in the opposite growth direction, and the sacrificial layer is corroded in the electrochemical reaction, so that the epitaxial thin film layer and the nano-pillar structure can fall off integrally.
Preferably, the epitaxial thin film layer in direct contact with the nano-pillars can be gallium nitride, or indium gallium nitride, or a low-aluminum component aluminum gallium nitride material; the sacrificial layer is made of high-aluminum component AlGaN or AlN material.
Preferably, the thickness of the epitaxial thin film layer is 4 nm-200 nm, the diameter of the quantum dot is smaller than 50nm, and the thickness of the two-dimensional material is smaller than 4 nm.
Although it is difficult to impart high transparency to the gallium nitride-based semiconductor material itself, in the present invention, the gallium nitride-based material having piezoelectric properties is processed into a nanopillar form, and the nanopillars are arranged in an array to form a dielectric layer of the pressure sensor. Since light can pass through gaps among the nano-pillars and nano-scale semiconductor pillars are difficult to perceive by naked eyes, the dielectric layer of the invention is relatively transparent to an observer, so that the observer is difficult to perceive the existence of the semiconductor pillars, thereby realizing the stealth effect. On the basis, the transparent substrate is combined to fix the dielectric layer formed by the nano-pillar array, and the transparent electrode is combined to form the transparent piezoelectric sensor, so that the invisible effect of the piezoelectric sensor is realized.
In addition, the overall transmittance of the piezoelectric sensor in a visible light range can be larger than 50% by adjusting the specific distance between the nano columns and the specific materials of the transparent substrate and the transparent electrode, so that the semi-invisible or invisible pressure sensor is realized.
Drawings
FIG. 1 is a flow chart of a method of fabricating an invisible pressure sensor according to an embodiment of the present invention;
FIGS. 2a to 2d are process diagrams of an invisible pressure sensor according to an embodiment of the present invention;
FIG. 3 is an electron microscope image of a semiconductor nanopillar array according to an embodiment of the invention;
FIG. 4 is a graph of transmittance of a semi-invisible pressure sensor material of an embodiment of the present invention;
FIG. 5 is a schematic structural diagram of an invisible pressure sensor manufactured by a manufacturing method according to another embodiment of the invention;
FIG. 6 is a schematic structural diagram of a invisible pressure sensor according to another embodiment of the present invention;
fig. 7 is a schematic structural diagram of an invisible pressure sensor according to another embodiment of the invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, embodiments of the present invention are described in detail below with reference to the accompanying drawings. Examples of these preferred embodiments are illustrated in the accompanying drawings. The embodiments of the invention shown in the drawings and described in accordance with the drawings are exemplary only, and the invention is not limited to these embodiments.
It should be noted that, in order to avoid obscuring the present invention with unnecessary details, only the structures and/or processing steps closely related to the scheme according to the present invention are shown in the drawings, and other details not so relevant to the present invention are omitted.
In order to impart light transmittance to a semiconductor piezoelectric sensor, the following means is adopted in the examples of the present invention.
Example 1
The present embodiment provides a method for manufacturing an invisible pressure sensor, as shown in fig. 1, the method includes:
and step S1, forming a semiconductor nano-pillar array with piezoelectric characteristics, and filling a transparent substrate in the semiconductor nano-pillar array. In this embodiment, the present step specifically includes:
and epitaxially growing a gallium nitride-based semiconductor material on the epitaxial thin film layer of the gallium nitride material to form a plurality of semiconductor nano-pillars arranged in an array so as to obtain the semiconductor nano-pillar array. Specifically, as shown in fig. 2a and 2b, a layer of aluminum nitride material is grown on an N-type silicon substrate 1 to form a sacrificial layer 2; then growing a gallium nitride film on the sacrificial layer 2 to form the epitaxial thin film layer 3; and then, carrying out array epitaxial growth on the gallium nitride-based semiconductor material on the epitaxial thin film layer 3 by adopting metal organic chemical vapor deposition or molecular beam epitaxy equipment so as to form the semiconductor nano-pillar array 4.
Optionally, in this embodiment, the process of forming the semiconductor nanorod array 4 specifically includes:
and epitaxially growing gallium nitride nano columns on the epitaxial thin film layer 3, and then epitaxially growing aluminum gallium nitride nano columns or indium gallium nitride nano columns on each gallium nitride nano column, or alternatively growing the aluminum gallium nitride nano columns and the indium gallium nitride nano columns to form the semiconductor nano column array 4, so as to improve the piezoelectric property.
After the semiconductor nanopillar array 4 is formed, as shown in fig. 2c, a transparent substrate is injected into the semiconductor nanopillar array 4 such that the side surfaces of the plurality of semiconductor nanopillars are immersed in the transparent substrate. The transparent matrix is then cured to form the transparent matrix 5. Preferably, in order to ensure the light transmittance of the transparent substrate 5, the transparent substrate adopts substrate water of polymethyl methacrylate material.
Alternatively, the method of filling the transparent substrate 5 in the semiconductor nanopillar array 4 may also use a spin coating process to achieve the injection of the transparent substrate. After the injection of the matrix body, matrix water covering the end face of the semiconductor nano-pillar needs to be removed, so that the subsequent connection between the semiconductor nano-pillar and the electrode material is facilitated.
Step S2, respectively disposing transparent electrode layers on two opposite sides of the semiconductor nano-pillar array, so that each semiconductor nano-pillar is electrically connected to two of the transparent electrode layers, respectively.
Specifically, as shown in fig. 2d, the epitaxial thin film layer 3 and the substrate 1 are separated by removing the sacrificial layer 2, and then a two-dimensional material layer is formed on the side of the epitaxial thin film layer 3 facing away from the semiconductor nanopillar array 4 to form the transparent electrode layer 6; and forming a two-dimensional material layer on one side of the semiconductor nano-pillar array 4, which faces away from the epitaxial thin film layer 3, so as to form another transparent electrode layer 6. Wherein the free end of each semiconductor nano-pillar of the semiconductor nano-pillar array 4 is in contact with the other transparent electrode layer 6. Preferably, the two-dimensional material layer is made of one of graphene, boron nitride, molybdenum disulfide and tungsten disulfide.
In the method for manufacturing the invisible pressure sensor of the present embodiment, the gallium nitride-based material with piezoelectric property is prepared into a nano-pillar form, and the nano-pillars are arranged in an array (as shown in fig. 3), so as to form the dielectric layer of the pressure sensor. Since light can pass through gaps between the plurality of nano-pillars and the nano-scale semiconductor pillars are difficult to perceive by naked eyes, the dielectric layer of the present invention is in a relatively transparent state to an observer, so that the observer is difficult to perceive his presence, thereby realizing a stealth effect. On the basis of the above, a transparent substrate 5 is combined to fix a dielectric layer composed of a nanopillar array, and a transparent electrode is combined to form a transparent piezoelectric sensor.
In this embodiment, in order to ensure the light transmittance of the entire pressure sensor, the thickness of the epitaxial thin film layer 3 must be in the range of 4nm to 200 nm. And the height of the gallium nitride nano column is at least 250nm, after the aluminum gallium nitride nano column or the indium gallium nitride nano column is additionally grown, the overall height of the semiconductor nano column is not more than 5000nm, the thickness of the semiconductor nano column is less than or equal to 250nm, and the distance between the adjacent semiconductor nano columns is more than or equal to 380 nm. As shown in fig. 4, the horizontal axis in fig. 4 represents the wavelength of light irradiated on the piezoelectric sensor material sample manufactured by the manufacturing method provided in the present embodiment, and the vertical axis represents the transmittance of the corresponding light.
In addition, the overall transmittance of the piezoelectric sensor in a visible light range can be larger than 50% by adjusting the specific distance between the nano columns and the specific materials of the transparent substrate 5 and the transparent electrode, so that the semi-invisible or even invisible pressure sensor is realized.
Example 2
The method for manufacturing the invisible pressure sensor provided by the embodiment is an improvement on the basis of the embodiment 1. The difference from the manufacturing method of example 1 is:
the epitaxial thin film layer 3 in this embodiment has good conductivity, and the epitaxial thin film layer 3 is thinned first to increase the transparency thereof. The method for thinning the epitaxial thin film layer 3 can be an etching mode or a mechanical polishing mode. The thickness of the epitaxial thin film layer 3 may be reduced or removed, i.e., the thickness is reduced to 0. As shown in fig. 5, after the epitaxial thin film layer 3 is removed, transparent electrode layers 6 are disposed on opposite sides of the semiconductor nanopillar array 4 to form a pressure sensor. In this embodiment, the transparent electrode layer 6 may be made of other transparent electrode materials than two-dimensional materials, for example, transparent electrode materials such as ITO.
Example 3
This example provides an invisible pressure sensor that can be fabricated by the fabrication method provided in example 1. As shown in fig. 6, the invisible pressure sensor includes two transparent electrode layers graphene 60 facing each other. A semiconductor nano-pillar array 40 is disposed between the two transparent electrode layers 60. The semiconductor nano-pillar array 40 includes a semiconductor transparent substrate 40b, and a plurality of semiconductor nano-pillars 40a having piezoelectric characteristics formed on the semiconductor transparent substrate 40 b. And each nano column comprises indium gallium nitride material segments and aluminum gallium nitride material segments which are alternatively epitaxially grown. The semiconductor nano-pillar array 40 is filled with a transparent substrate 50. The transparent matrix 50 may also contain a quantum dot material with piezoelectric properties to enhance the piezoelectric properties of the sensor.
Example 4
This embodiment provides an invisible pressure sensor that can be manufactured by the manufacturing method provided in embodiment 2. As shown in fig. 7, the invisible pressure sensor includes a first transparent electrode layer 10, a transparent dielectric layer 20, and a second transparent electrode layer 30, which are sequentially stacked.
The transparent dielectric layer 20 includes a transparent substrate 201 and an array of semiconductor nanopillars. The semiconductor nano-pillar array comprises a plurality of semiconductor nano-pillars 202 with piezoelectric properties, the semiconductor nano-pillar array is arranged between the first transparent electrode layer 10 and the second transparent electrode layer 30, each semiconductor nano-pillar 202 is respectively connected with the first transparent electrode layer 10 and the second transparent electrode layer 30, and the transparent substrate 201 is filled between the first transparent electrode layer 10 and the second transparent electrode layer 30. The first transparent electrode layer 10 and the second transparent electrode layer 30 are made of one of graphene, boron nitride, molybdenum disulfide, and tungsten disulfide.
It should be noted that, in this document, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.

Claims (10)

1. A method for manufacturing an invisible pressure sensor, the method comprising:
forming a semiconductor nano-pillar array with piezoelectric characteristics, and filling a transparent matrix in the semiconductor nano-pillar array;
transparent electrode layers are respectively arranged on two opposite sides of the semiconductor nano-pillar array, so that each semiconductor nano-pillar is electrically connected with the two transparent electrode layers respectively.
2. The method of manufacturing according to claim 1, wherein the method of forming a semiconductor nanopillar array having piezoelectric properties and filling a transparent matrix in the semiconductor nanopillar array comprises:
growing a gallium nitride-based semiconductor material on the epitaxial thin film layer to form a plurality of semiconductor nano-pillars arranged in an array;
injecting a transparent colloid between the plurality of semiconductor nano-pillars arranged in an array, so that the side surfaces of the plurality of semiconductor nano-pillars are immersed in the transparent colloid;
curing the transparent colloid to form the transparent matrix.
3. The method of claim 2, wherein transparent electrode layers are respectively disposed on two opposite sides of the array of semiconductor nano-pillars, and the method of electrically connecting each semiconductor nano-pillar with two transparent electrode layers respectively comprises:
thinning the epitaxial thin film layer to enable the epitaxial thin film layer to be thinned to 4 nm-200 nm;
forming a two-dimensional material layer on a side of the epitaxial thin film layer facing away from the semiconductor nano-pillar array to form the transparent electrode layer, wherein a free end of each semiconductor nano-pillar of the semiconductor nano-pillar array is in contact with the transparent electrode layer;
and forming a two-dimensional material layer on one side of the semiconductor nano-pillar array, which faces away from the epitaxial thin film layer, so as to form another transparent electrode layer.
4. The method of claim 2, wherein before disposing the transparent electrode layers on opposite sides of the array of semiconductor nanopillars, respectively, the method further comprises:
and removing the epitaxial thin film layer to enable the plurality of semiconductor nano columns to respectively have two end parts opposite to each other.
5. The method of manufacturing according to any one of claims 2 to 4, wherein the method of forming the plurality of semiconductor nanopillars arranged in an array comprises:
sequentially forming a sacrificial layer and the epitaxial thin film layer on the substrate;
epitaxially growing gallium nitride nano-pillars on the epitaxial thin film layer;
epitaxially growing indium gallium nitride nano columns on each gallium nitride nano column, or alternatively growing aluminum gallium nitride nano columns and indium gallium nitride nano columns, or alternatively growing gallium nitride nano columns and indium gallium nitride nano columns;
and removing the sacrificial layer to separate the substrate and the epitaxial thin film layer.
6. The manufacturing method according to claim 3, wherein the two-dimensional material layer is made of one of graphene, boron nitride, molybdenum disulfide and tungsten disulfide, and the thickness of the two-dimensional material layer is less than 5 nm.
7. The invisible pressure sensor is characterized by comprising two transparent electrode layers which are opposite to each other, wherein a semiconductor nano-pillar array is arranged between the two transparent electrode layers, the semiconductor nano-pillar array comprises a plurality of semiconductor nano-pillars with piezoelectric characteristics, and the semiconductor nano-pillars are perpendicular to the transparent electrode layers; transparent substrates are filled in the semiconductor nano-pillar array, and each semiconductor nano-pillar is electrically connected with the two transparent electrode layers respectively.
8. The invisible pressure sensor of claim 7, wherein a spacing between two adjacent semiconductor nano-pillars is greater than or equal to 380nm, and a diameter of the semiconductor nano-pillars is less than or equal to 250 nm.
9. The invisible pressure sensor according to claim 8, wherein a semiconductor transparent substrate is further disposed between the two transparent electrode layers, the semiconductor nano-pillar array is formed on the semiconductor transparent substrate, and the thickness of the semiconductor transparent substrate is 4nm to 200 nm.
10. The invisible pressure sensor of claim 9, wherein one side of the semiconductor transparent substrate is in contact with the array of semiconductor nano-pillars and the other side is in contact with the transparent electrode layer.
CN202110102381.4A 2021-01-26 2021-01-26 Invisible pressure sensor and manufacturing method thereof Pending CN114899304A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115296561A (en) * 2022-09-05 2022-11-04 广东工业大学 Core-shell coaxial gallium nitride piezoelectric nano generator and processing method thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115296561A (en) * 2022-09-05 2022-11-04 广东工业大学 Core-shell coaxial gallium nitride piezoelectric nano generator and processing method thereof
US11963450B2 (en) 2022-09-05 2024-04-16 Guangdong University Of Technology Method for manufacturing core-shell coaxial gallium nitride (GaN) piezoelectric nanogenerator

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