CN114895078A - Non-magnetic core closed-loop current detection packaging structure and current detection method - Google Patents
Non-magnetic core closed-loop current detection packaging structure and current detection method Download PDFInfo
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- CN114895078A CN114895078A CN202210364109.8A CN202210364109A CN114895078A CN 114895078 A CN114895078 A CN 114895078A CN 202210364109 A CN202210364109 A CN 202210364109A CN 114895078 A CN114895078 A CN 114895078A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/04—Housings; Supporting members; Arrangements of terminals
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
Abstract
The invention provides a non-magnetic core closed loop current detection packaging structure and a current detection method. There is not magnetic core closed loop current detection packaging structure, include: the primary side frame, the carrier plate, the feedback coil and the detection chip are used for dynamically detecting the current in the primary side frame; the main Hall sensor is arranged on the inner side of the U-shaped structure of the primary side frame and used for dynamically monitoring a magnetic field between the primary side frame and the feedback coil; and the auxiliary Hall sensor is arranged at the position which is arranged at the outer side of the U-shaped structure of the primary side frame and has a certain distance with the main Hall sensor in the horizontal direction, and is used for dynamically monitoring the magnetic field between the primary side frame and the feedback coil and eliminating errors. The invention aims to solve the technical problems of reducing the volume of a current detection module, improving the stability and the external magnetic interference resistance of a Hall sensor and providing a magnetic core-free closed-loop current detection packaging structure and a current detection method.
Description
Technical Field
The invention relates to the field of semiconductors, in particular to a magnetic core-free closed-loop current detection packaging structure and a current detection method.
Background
In the prior art, a closed-loop power detector generally comprises a primary circuit, a magnetic gathering ring (magnetic core), a hall sensor, a feedback coil, an amplifier and the like; the adopted closed-loop current detection module has the defects of large volume, poor stability, weak external magnetic interference resistance and the like. How to reduce hall sensor's volume, improve hall sensor's stability reduce cost simultaneously, become the problem that the electric current detection field needs a urgent need to be solved.
Disclosure of Invention
The invention aims to solve the technical problems of reducing the volume of a current detection module, improving the stability and the external magnetic interference resistance of a Hall sensor and providing a magnetic core-free closed-loop current detection packaging structure and a current detection method.
The invention provides a non-magnetic core closed loop current detection packaging structure, which comprises: the primary side frame comprises a U-shaped structure, and current passes through the primary side frame to generate a magnetic field; the carrier plate is arranged on the surface of the primary side frame and used for isolating the primary side frame from the feedback coil; the feedback coil is a non-magnetic core coil, is arranged above the carrier plate and is used for generating a magnetic field opposite to the primary side frame; the detection chip is arranged between the primary side frame and the feedback coil, generates an induction magnetic field for balancing the magnetic field of the primary side frame by regulating and controlling the current of the feedback coil, and dynamically detects the current in the primary side frame; the main Hall sensor is arranged on the inner side of the U-shaped structure of the primary side frame and used for dynamically monitoring a magnetic field between the primary side frame and the feedback coil; and the auxiliary Hall sensor is arranged at the position which is arranged at the outer side of the U-shaped structure of the primary side frame and has a certain distance with the main Hall sensor in the horizontal direction, and is used for dynamically monitoring the magnetic field between the primary side frame and the feedback coil and eliminating errors.
Optionally, the main hall sensor and the auxiliary hall sensor both adopt one of an antimonide hall sensor and a gallium arsenide hall sensor.
Optionally, the main hall sensor is arranged at the center of the feedback coil; the secondary Hall sensor is arranged at a position covered by the feedback coil.
Optionally, the main hall sensor is arranged at the center of the feedback coil; the auxiliary Hall sensor is arranged at a position, which is a certain distance away from the center of the feedback coil, outside the feedback coil.
Optionally, the main hall sensor and the auxiliary hall sensor are arranged and fixed above or below the carrier plate.
Optionally, the distance from the center of the main hall sensor to the inner edge of the U-shaped structure of the primary frame is 0-1 mm; the distance from the center of the auxiliary Hall sensor to the outer edge of the U-shaped structure of the primary frame is 0-0.5 mm.
Optionally, the circuit connection relationship between the main hall sensor and the detection chip and the auxiliary hall sensor and the detection chip includes: the main Hall sensor and the auxiliary Hall sensor respectively comprise two input ends and two output ends; the two input ends of the main Hall sensor and the auxiliary Hall sensor are connected with the detection chip in parallel; the two output ends of the main Hall sensor and the auxiliary Hall sensor are connected in series with a detection chip.
Optionally, the magnetic core-free closed-loop current detection module structure further includes a secondary frame, the secondary frame is electrically connected to the detection chip and the feedback coil, and the secondary frame is disposed below the carrier plate.
The invention also provides a current detection method, and any one of the magnetic core-free closed-loop current detection packaging structures is characterized by comprising the following steps: obtaining the output voltage value V of the main Hall sensor by adopting a non-magnetic core closed loop current detection packaging structure Main OUT And the output voltage value V of the secondary Hall sensor Auxiliary OUT (ii) a Calculating the differential voltage, V Differential OUT ＝V Main OUT -V Auxiliary OUT ＝k*(B Main magnet -(-B Auxiliary magnet ) K is a Hall linear coefficient, B) Main magnet Is the magnetic field strength in the sensitive direction of the main Hall sensor, B Auxiliary magnet The intensity of the magnetic field in the sensitive direction of the auxiliary Hall sensor.
Optionally, the directions of the magnetic fields induced by the main hall sensor and the auxiliary hall sensor are opposite, and the output voltages are opposite.
The invention provides the current detection packaging structure and the current detection method of the non-magnetic core closed loop, so that the volume of the current detection module is reduced, and the detection precision and reliability of the Hall sensor are improved.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings used in the embodiments of the present invention will be briefly described below, and it is apparent that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art that other drawings can be obtained according to the drawings without inventive labor.
Fig. 1 is a schematic view of a magnetic core-free closed-loop current detection package structure according to an embodiment of the present invention;
fig. 2 is a schematic cross-sectional view of a package structure for detecting a current without a magnetic core closed loop according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of a portion of a circuit according to an embodiment of the present invention;
FIG. 4 is a schematic diagram of the position of a Hall sensor according to the present invention;
fig. 5 is a schematic cross-sectional view of a core-less closed-loop current detection package structure according to an embodiment of the invention.
Detailed Description
The following describes the non-magnetic core closed-loop current detection packaging structure and the current detection method provided by the invention in detail with reference to the accompanying drawings.
The invention aims to solve the technical problems of reducing the volume of a current detection module and improving the detection precision and reliability of a Hall sensor, and provides a non-magnetic core closed-loop current detection packaging structure and a current detection method.
Fig. 1 is a schematic view of a magnetic core-less closed-loop current detection package structure according to an embodiment of the present invention. The dotted line part is the position of the feedback coil 104, and in order to clearly display the non-magnetic core closed-loop current detection packaging structure, the feedback coil 104 is subjected to perspective processing and is only required for displaying an internal structure.
Referring to fig. 1, a schematic diagram of a non-magnetic core closed-loop current detection package structure is shown, where the non-magnetic core closed-loop current detection package structure includes: the magnetic field sensor comprises a primary side frame 101, wherein the primary side frame 101 comprises a U-shaped structure 102, and a magnetic field is generated when current passes through the primary side frame 101; the carrier plate 103 is arranged on the surface of the primary side frame 101 and used for isolating the primary side frame 101 from the feedback coil 104; a feedback coil 104, wherein the feedback coil 104 is a coreless coil, is arranged above the carrier plate 103, and is used for generating a magnetic field opposite to the primary frame 101; a detection chip (not shown) disposed between the primary frame 101 and the feedback coil 104, and configured to dynamically detect a current in the primary frame 101 by regulating and controlling a current of the feedback coil 104 to generate an induced magnetic field that balances a magnetic field of the primary frame 101; the main hall sensor 106 is arranged on the inner side of the U-shaped structure 102 of the primary frame 101, and is used for dynamically monitoring a magnetic field between the primary frame 101 and the feedback coil 104; and the auxiliary hall sensor 107 is arranged on the outer side of the U-shaped 102 structure of the primary frame and at a certain distance from the main hall sensor 106 in the horizontal direction, and is used for dynamically monitoring the magnetic field between the primary frame 101 and the feedback coil 104 and eliminating errors.
The magnetic core-free closed-loop current detection module structure further comprises a secondary frame 108, wherein the secondary frame 108 is electrically connected with the detection chip and the feedback coil 104, and the secondary frame 108 is arranged below the carrier plate 103. Further, a coil positioning structure (not shown) is further included above the carrier plate 103 for fixing the feedback coil 104.
Fig. 2 is a schematic cross-sectional view of a core-less closed-loop current detection package structure according to an embodiment of the invention. For further explanation of the package structure for detecting current of the core-less closed loop, please refer to fig. 2.
In the present embodiment, the main hall sensor 106 is disposed at a position at the center of the feedback coil 104; the sub hall sensor 107 is disposed at a position covered by the feedback coil 104. The dashed line OO 'indicates the position of the central axis of the feedback coil 104, i.e. the main hall sensor 106 is also arranged on the dashed line OO'.
Further, a pad 109 is included below the main hall sensor 106, and the pad 109 raises the height of the main hall sensor 106 to be close to the center of the feedback coil 104, so as to reduce the error of the main hall sensor 106.
In order to improve the accuracy of the measurement of the hall sensor, the hall sensor should be placed at the position where the current density is highest and the magnetic field is strongest. Therefore, the sensitive surface of the main hall sensor 106 should be located in the hole of the feedback coil 104, i.e. above the lower end surface of the feedback coil 104; if the sensitive surface of the main hall sensor 106 should be located below the lower end surface of the feedback coil 104, the distance from the lower end surface of the feedback coil 104 should not exceed a hall device height value.
In other embodiments of the present invention, the main hall sensor is disposed at a position in the center of the feedback coil; the auxiliary Hall sensor is arranged at a position, which is a certain distance away from the center of the feedback coil, outside the feedback coil.
Further, in this embodiment, the distance from the center of the main hall sensor 106 to the inner edge of the primary frame U-shaped structure 102 is 0-1 mm; the distance from the center of the auxiliary Hall sensor 107 to the outer edge of the primary side frame U-shaped structure 102 is 0-0.5 mm.
In this embodiment, the thickness of the carrier plate 103 is 0.03mm to 0.25 mm.
In the present embodiment, the main hall sensor 106 and the sub hall sensor 107 are disposed and fixed above the carrier board 103; in other embodiments of the present invention, the main hall sensor 106 and the sub hall sensor 107 may also be disposed and fixed below the carrier plate 103.
Further, the main hall sensor 106 and the sub hall sensor 107 both adopt one of an antimonide hall sensor and a gallium arsenide hall sensor.
Fig. 3 is a schematic diagram of a part of a circuit according to an embodiment of the present invention.
For explaining the circuit connection relationship between the main hall sensor and the auxiliary hall sensor and the detection chip, please refer to fig. 3, which includes: the main Hall sensor and the auxiliary Hall sensor respectively comprise two input ends and two output ends; the two input ends of the main Hall sensor and the auxiliary Hall sensor are connected with the detection chip in parallel; the two output ends of the main Hall sensor and the auxiliary Hall sensor are connected in series with a detection chip. In the embodiment, the ends 1 and 3 of the main Hall sensor and the auxiliary Hall sensor are connected with the ends hall _1 and hall _3 of the detection chip in parallel; the different ends of the main Hall sensor 2 and the auxiliary Hall sensor 4 are connected in series with the hall _1 end and the hall _3 end of the detection chip.
Wherein, R1 and R2 are differential feedback sampling resistors which are respectively used for coarse adjustment and fine adjustment; VOUT is the detection chip output end, VCC is the detection chip power supply end, VREF is the reference end, CND is the ground connection common terminal.
In this embodiment, the detection chip is an integrated circuit IC such as a DRV411 by TI, a SL411 by Senko, or the like.
Fig. 4 is a schematic diagram of the position of the hall sensor according to the present invention.
Referring to fig. 4, in addition to the hall sensor positions described in the above embodiments, the sub hall sensors may be disposed at the feedback coil bottom 41, the frame outer arc side 42, and the frame outer 43 positions; the main hall sensor is arranged at a position 40 in the center of the feedback coil 104. Wherein, the position of the outer 43 of the frame is 8mm-9mm away from the outer arc of the frame.
The secondary Hall sensors are arranged at three different positions and have differential functions. In this embodiment, by performing an experiment under the conditions that the rated current of the primary frame is 10A and the external magnetic field is 22.5Gs, the output voltage values of the main hall sensor arranged at the position 40, the auxiliary hall sensors arranged at the positions of the bottom 41 of the feedback coil, the side 42 of the outer arc of the frame and the outer 43 of the frame are compared, and the output voltage value V of the main hall sensor is compared Main OUT And the output voltage value V of the secondary Hall sensor Auxiliary OUT The difference was made, and the resulting differential voltages were-13 mV, 90mV, and 107mV, respectively.
Further, the sub hall sensor at the position of the bottom 41 of the feedback coil is influenced by the magnetic field of the feedback coil and the magnetic field of the frame; the auxiliary Hall sensor positioned at the position 42 beside the outer arc of the frame is influenced by the magnetic field of the outer arc edge of the frame and the magnetic field of the tiny feedback coil; the secondary hall sensor at the position outside the frame 43 is hardly affected by the feedback coil and the frame magnetic field.
The main Hall sensor and the auxiliary Hall sensor are influenced by a magnetic field caused by the current change of the primary side frame, wherein the main Hall sensor is positioned at the center position of the feedback coil, and the magnetic field generated by the feedback coil compensates the main Hall sensor; the auxiliary Hall sensor is far away from the center of the feedback coil and can be neglected by the influence of a magnetic field generated by the feedback coil, so that the feedback coil can not compensate the auxiliary Hall sensor at the same time, and the influence of the magnetic field of the feedback coil is avoided when the setting position of the auxiliary Hall sensor is selected. In addition, the process difficulty of the later-stage packaging needs to be combined for comprehensive consideration.
Fig. 5 is a schematic cross-sectional view of a core-less closed-loop current detection package structure according to an embodiment of the invention.
Referring to fig. 5, in the present embodiment, the difference between the coreless closed-loop current detection package structure and the first embodiment of the present invention is that the main hall sensor and the sub hall sensor are disposed and fixed below the carrier. The feedback coil 104 is directly arranged on the carrier plate 103, and the feedback coil 104 is not required to be fixed by a coil positioning structure; the main hall sensor 106 and the sub hall sensor 107 are arranged and fixed below the carrier plate 103, and are respectively located in a gap between the primary frame 101 and the sub frame 108.
Above-mentioned technical scheme adopts differential structure to closed loop electric quantity detection hall sensor component, has good performance in no magnetic core electric quantity detection structure, can reduce the volume of charge detector, simplifies the structure and reduces the source that generates heat, does benefit to more small-size chip level encapsulation and integrates, reduce cost.
The invention also provides a current detection method, which adopts any one of the non-magnetic core closed-loop current detection packaging structures, and comprises the following steps: obtaining the output voltage value V of the main Hall sensor by adopting a non-magnetic core closed loop current detection packaging structure Main OUT And the output voltage value V of the secondary Hall sensor Auxiliary OUT (ii) a Calculating the differential voltage, V Differential OUT ＝V Main OUT -V Auxiliary OUT ＝k*(B Main magnet -(-B Auxiliary magnet ) K is a Hall linear coefficient, B) Main magnet Is the magnetic field strength in the sensitive direction of the main Hall sensor, B Auxiliary magnet The intensity of the magnetic field in the sensitive direction of the auxiliary Hall sensor.
Because the magnetic fields in the sensitive directions of the main Hall sensor and the auxiliary Hall sensor are both generated by sensing the current in the primary side frame, the directions of the magnetic fields sensed by the main Hall sensor and the auxiliary Hall sensor which are positioned at the two sides of the primary side frame are opposite, and the output voltages are opposite.
Furthermore, because the directions of the induction magnetic fields of the main Hall sensor and the auxiliary Hall sensor are opposite, the output voltages are opposite, so that: v Differential OUT ＝V Main OUT -V Auxiliary OUT ＝k*(B Main magnet -(-B Auxiliary magnet ))＝k*(B Main magnet +B Auxiliary magnet ) (ii) a Wherein k represents the Hall induction magnetic field and output voltage coefficient, referred to herein as the Hall linear coefficient; here, V ═ k × B is a characteristic of the hall device itself.
Namely, the primary side current simultaneously generates opposite magnetic fields at the inner edge and the outer edge of the throat part of the frame, and the opposite magnetic fields are superposed after difference, so that the measurement stability is improved; v Differential OUT ＝V Main OUT -V Auxiliary OUT ＝k*(B Main magnet -(-B Auxiliary magnet ))；
If there is a same source stray magnet B above two Hall devices Miscellaneous magnet Sin theta, theta represents the included angle between the stray magnetic direction and the Hall sensitive direction, and then V Differential OUT ＝k*((B Main magnet +B Miscellaneous magnet *sinθ)-(-B Auxiliary magnet +B Miscellaneous magnet *sinθ))；
Arranged and transformed to obtain V Differential OUT ＝k*(B Main magnet +B Auxiliary magnet ) (ii) a I.e. B Miscellaneous magnet Sin θ has been removed by the two hall differential.
Thus, can pass through V Differential OUT ＝V Main OUT -V Auxiliary OUT Differentiating the output voltage values of the main Hall sensor and the auxiliary Hall sensor, V Differential OUT To eliminate the voltage value after the stray magnetic interference.
The technical scheme adopts a differential structure aiming at the closed-loop electric quantity detection Hall sensor element, has good performance in a magnetic core-free electric quantity detection structure, can reduce the volume of the electric quantity detector, simplify the structure, reduce a heating source, facilitate more small-sized chip-scale packaging integration and reduce the cost; according to the current detection method, the main Hall sensor and the auxiliary Hall sensor are used for difference, so that external magnetic interference in the electric quantity detection process is inhibited, and the detection stability is improved.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and decorations can be made without departing from the principle of the present invention, and these modifications and decorations should also be regarded as the protection scope of the present invention.
Claims (10)
1. The utility model provides a no magnetic core closed loop current detection packaging structure which characterized in that includes:
the primary side frame comprises a U-shaped structure, and current passes through the primary side frame to generate a magnetic field;
the carrier plate is arranged on the surface of the primary side frame and used for isolating the primary side frame from the feedback coil;
the feedback coil is a non-magnetic core coil, is arranged above the carrier plate and is used for generating a magnetic field opposite to the primary side frame;
the detection chip is arranged between the primary side frame and the feedback coil, generates an induction magnetic field for balancing the magnetic field of the primary side frame by regulating and controlling the current of the feedback coil, and dynamically detects the current in the primary side frame;
the main Hall sensor is arranged on the inner side of the U-shaped structure of the primary side frame and used for dynamically monitoring a magnetic field between the primary side frame and the feedback coil;
and the auxiliary Hall sensor is arranged at the position which is arranged at the outer side of the U-shaped structure of the primary side frame and has a certain distance with the main Hall sensor in the horizontal direction, and is used for dynamically monitoring the magnetic field between the primary side frame and the feedback coil and eliminating errors.
2. The nonmagnetic core closed-loop current detection package structure of claim 1, wherein the main hall sensor and the auxiliary hall sensor both adopt one of an antimonide in hall sensor and a gallium arsenide hall sensor.
3. The coreless, closed-loop current sense package of claim 1, wherein the main hall sensor is disposed at a center of the feedback coil; the secondary Hall sensor is arranged at a position covered by the feedback coil.
4. The coreless, closed-loop current sense package of claim 1, wherein the main hall sensor is disposed at a center of the feedback coil; the auxiliary Hall sensor is arranged at a position, which is a certain distance away from the center of the feedback coil, outside the feedback coil.
5. The coreless, closed-loop current sense package of claim 1, wherein the primary and secondary hall sensors are disposed and fixed above or below the carrier.
6. The package structure for detecting closed-loop current without magnetic core of claim 1, wherein the distance from the center of the main hall sensor to the inner edge of the U-shaped structure of the primary frame is 0-1 mm; the distance from the center of the auxiliary Hall sensor to the outer edge of the U-shaped structure of the primary frame is 0-0.5 mm.
7. The coreless closed-loop current sense package of claim 1, wherein the circuit connection relationship between the primary and secondary hall sensors and the sense die includes:
the main Hall sensor and the auxiliary Hall sensor respectively comprise two input ends and two output ends;
the two input ends of the main Hall sensor and the auxiliary Hall sensor are connected with the detection chip in parallel;
the two output ends of the main Hall sensor and the auxiliary Hall sensor are connected in series with a detection chip.
8. The coreless closed-loop current sense package structure of claim 1, further comprising a secondary frame, the secondary frame being electrically connected to the sense die and the feedback coil, the secondary frame being disposed under the carrier.
9. A current detection method using the magnetic core-free closed-loop current detection packaging structure of any one of claims 1 to 8, comprising:
obtaining the output voltage value V of the main Hall sensor by adopting a non-magnetic core closed loop current detection packaging structure Main OUT And the output voltage value V of the secondary Hall sensor Auxiliary OUT ；
Calculating the differential voltage, V Differential OUT ＝V Main OUT -V Auxiliary OUT ＝k*(B Main magnet -(-B Auxiliary magnet ) K is a Hall linear coefficient, B) Main magnet Is the magnetic field strength in the sensitive direction of the main Hall sensor, B Auxiliary magnet The intensity of the magnetic field in the sensitive direction of the auxiliary Hall sensor.
10. The method of claim 9, wherein the main hall sensor and the sub hall sensor have opposite magnetic field directions and opposite output voltages.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210364109.8A CN114895078A (en) | 2022-04-08 | 2022-04-08 | Non-magnetic core closed-loop current detection packaging structure and current detection method |
| CN202222310794.4U CN218629895U (en) | 2022-04-08 | 2022-08-30 | Non-magnetic core closed loop current detection packaging structure |
| CN202211050937.0A CN115420919A (en) | 2022-04-08 | 2022-08-30 | Non-magnetic core closed-loop current detection packaging structure and current detection method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210364109.8A CN114895078A (en) | 2022-04-08 | 2022-04-08 | Non-magnetic core closed-loop current detection packaging structure and current detection method |
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| CN114895078A true CN114895078A (en) | 2022-08-12 |
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| CN202210364109.8A Pending CN114895078A (en) | 2022-04-08 | 2022-04-08 | Non-magnetic core closed-loop current detection packaging structure and current detection method |
| CN202211050937.0A Pending CN115420919A (en) | 2022-04-08 | 2022-08-30 | Non-magnetic core closed-loop current detection packaging structure and current detection method |
| CN202222310794.4U Active CN218629895U (en) | 2022-04-08 | 2022-08-30 | Non-magnetic core closed loop current detection packaging structure |
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| CN202211050937.0A Pending CN115420919A (en) | 2022-04-08 | 2022-08-30 | Non-magnetic core closed-loop current detection packaging structure and current detection method |
| CN202222310794.4U Active CN218629895U (en) | 2022-04-08 | 2022-08-30 | Non-magnetic core closed loop current detection packaging structure |
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- 2022-04-08 CN CN202210364109.8A patent/CN114895078A/en active Pending
- 2022-08-30 CN CN202211050937.0A patent/CN115420919A/en active Pending
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| CN218629895U (en) | 2023-03-14 |
| CN115420919A (en) | 2022-12-02 |
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