CN114890683B - High-performance anti-dazzle assembly and processing method thereof - Google Patents

Abstract

The application relates to the field of solar panel processing, and particularly discloses a high-performance anti-dazzle assembly and a processing method thereof. The high-performance anti-dazzle assembly comprises a photovoltaic glass substrate, an anti-dazzle composite film compounded on the surface of the photovoltaic glass substrate and a self-cleaning film compounded on one side of the anti-dazzle composite film far away from the photovoltaic glass substrate; the preparation method comprises the following steps: s1, preparing an anti-dazzle composite film, namely cleaning and drying a photovoltaic glass substrate, drying at 100-120 ℃, vacuumizing to 0.05Pa at 240-300 ℃, carrying out heat preservation for 8-16 min, and sequentially plating a SiOxFy film, a SiO2 film, a SiOxNy composite film and a SiNx composite film at 240-300 ℃; s2, compounding a self-cleaning film on one side of the SiNx composite film far away from the SiOxNy composite film to obtain a product. In addition, the product of the application has the effect of weakening the glare phenomenon of the photovoltaic panel.

Description

High-performance anti-dazzle assembly and processing method thereof

Technical Field

The present application relates to the field of solar panel processing, and more particularly, to a high performance anti-glare assembly and a method of processing the same.

Background

The traditional energy source is easy to generate greenhouse gas in the power generation process to influence ecological balance, and solar energy is used as an energy source which is convenient to mine, safe and clean and gradually enters the field of vision of people. Solar energy is generally utilized by photovoltaic panels installed in outdoor environments.

The photovoltaic panel is prepared by using photovoltaic glass as an upper cover plate, using composite materials such as a polyethylene terephthalate film, a fluorine-containing film-polyethylene terephthalate film-polyvinyl fluoride film and the like as a back plate, and compositing an encapsulated battery pack between the upper cover plate and the back plate through EVA glue, wherein the battery pack is formed by connecting a plurality of solar cells in series-parallel.

After the outdoor light irradiates on the surface of the photovoltaic glass of the photovoltaic panel, strong specular reflection is easy to occur, so that a glare phenomenon is generated, and the human health and the ecological environment are adversely affected.

Disclosure of Invention

In order to mitigate the glare phenomenon of a photovoltaic panel, the present application provides a high performance anti-glare module and a method of processing the same.

In a first aspect, the present application provides a high performance anti-glare assembly, employing the following technical scheme:

the utility model provides a high performance anti-dazzle subassembly, includes photovoltaic glass substrate, compound in anti-dazzle complex film of photovoltaic glass substrate surface and compound in anti-dazzle complex film keeps away from the self-cleaning film of photovoltaic glass substrate one side, anti-dazzle complex film includes along deviating from anti-dazzle compound SiO in proper order _x F _y Film, siO ₂ Film, siO _x N _y Composite film and SiN _x Composite film of SiO _x F _y The refractive index of the film is 1.38-1.40The thickness is 96-98 nm; the SiO is ₂ The refractive index of the film is 1.45-1.47 and the thickness is 92-95 nm; the SiO is _x N _y The refractive index of the composite film is 1.74-1.78 and the thickness is 52-54 nm; the SiN _x The refractive index of the composite film is 1.78-1.96 and the thickness is 95-105 nm; the refractive index of the self-cleaning film is 1.38-1.40, and the thickness is 96-98 nm.

By adopting the technical scheme, siO _x F _y The film has low refractive index and good adhesion with the photovoltaic glass substrate, due to SiO _x F _y The film has good compatibility with silicon dioxide, thereby improving the SiO in the application ₂ And the composite effect between the film and the photovoltaic glass substrate. SiN having high refractive index and good mechanical properties, corrosion resistance and moisture barrier properties is also used in the present application _x Composite film of SiO with excellent chemical stability, heat resistance and high temperature resistance _x N _y Composite film, siO _x N _y Composite film and SiN _x Composite film and SiO ₂ Excellent compatibility between films, and can improve SiN _x Composite film and SiO ₂ The composite effect between the films. And because photovoltaic panel sets up in the open air, so in order to reduce the influence of erosion on photovoltaic panel surface such as rainwater, dust to this application luminousness, thereby this application has synthetically improved the automatically cleaning effect and the long-term performance of this application through setting up self-cleaning film. In addition, the thickness and the refractive index of each layer of the anti-dazzle composite film and the self-cleaning film are limited, so that a continuous composite film system with excellent anti-reflection effect can be prepared, and the glare phenomenon of the photovoltaic panel is weakened.

In a second aspect, the present application provides a method for processing a high-performance anti-glare module, which adopts the following technical scheme: a processing method of a high-performance anti-glare component is processed by the following steps:

s1, preparing an anti-dazzle composite film, namely cleaning and drying a photovoltaic glass substrate, drying the photovoltaic glass substrate at 100-120 ℃, vacuumizing the photovoltaic glass substrate to 0.05Pa at 240-300 ℃, carrying out heat preservation treatment for 8-16 min, and sequentially carrying out heat preservation treatment at 240-300 DEG CPlating attached SiO _x F _y Film, siO ₂ Film, siO _x N _y Composite film and SiN _x A composite membrane;

s2, siN _x Composite film is far away from SiO _x N _y And (5) compounding a self-cleaning film on one side of the composite film to obtain the product.

By adopting the technical scheme, the particle migration speed is higher in the plating process, if the temperature of the photovoltaic glass substrate is lower than the plating temperature, the particle migration speed of the photovoltaic glass substrate is lower, the original lattice positions of the particles are easy to be covered by other substances, and the plating SiO is seriously reduced _x F _y The film surface compactness and the adhesive force are adopted, so that the photovoltaic glass substrate is preheated in the application, so that the film forming particles have certain surface migration capability after reaching the surface of the photovoltaic glass substrate, the particles are promoted to be compounded at the lowest position energy, and the formed SiO can be reduced _x F _y Internal stress of the film and high temperature can promote the overflow of particles with poor adhesive force, thereby improving SiO _x F _y The composite effect between the film and the photovoltaic glass substrate improves the compactness of the subsequent film plating and attaching, thereby improving the durability of the product.

Preferably, the self-cleaning film is prepared from the following raw materials: mixed solution A, mixed solution B and deionized water; wherein the mixed solution A is formed by mixing butyl titanate, triethanolamine, acetylacetone, absolute ethyl alcohol and deionized water according to the volume ratio of 12:3:3:80-82:36-38; wherein the mixed solution B is prepared from the following raw materials: the volume ratio of the tetraethyl silicate, the absolute ethyl alcohol, the deionized water and the ammonia water for preparing the mixed solution B is 18-23:30:50.

Through adopting above-mentioned technical scheme, this application has to the film that has adopted butyl titanate and tetraethyl silicate to form the self-cleaning film that is piled up by the silica and the titanium dioxide particle of specification for 25+ -2 nm two on anti-dazzle composite sheet surface, give the self-cleaning film certain hole, make the film surface appear little coarse, the diffuse reflection on photovoltaic glass substrate surface has been strengthened, the anti-dazzle effect of this application has been improved, in addition, form little coarse surface can reduce the area of contact between dust granule and the product, and then reduced the adsorption affinity between dust granule and the product, thereby realize good self-cleaning effect. The film prepared by compounding the nano titanium dioxide and the nano silicon dioxide has lower refractive index, can be matched with an anti-dazzle composite film with refractive index change to form an anti-reflection film layer structure on the surface of the photovoltaic glass substrate, reduces the reflection on the surface of the photovoltaic glass substrate, and endows a product with excellent anti-reflection effect and anti-dazzle performance.

Preferably, the preparation of the mixed solution B specifically comprises the following steps: and (3) firstly mixing and stirring the tetraethyl silicate and the absolute ethyl alcohol uniformly according to the metering ratio, adding the metered deionized water, mixing and stirring uniformly, adding ammonia water to control the pH value of the solution to be 9-10, and mixing and stirring until the solution becomes transparent to obtain a mixed solution B.

By adopting the technical scheme, the tetraethyl silicate is subjected to hydrolysis reaction under alkaline conditions, so that part of silicon dioxide particles are coated with titanium dioxide to form composite particles, on one hand, the light capturing effect of the titanium dioxide is enhanced, and the titanium dioxide can capture water in the air and then react to produce hydroxyl free radicals, so that super-hydrophilicity is endowed to the film, rainwater or liquefied water in the air is promoted to permeate into the concave of the rough surface, dust is enabled to immediately enter the surface of the film, and the self-cleaning effect of the product is improved; on the other hand, the particles such as titanium dioxide in the film can degrade organic matters attached to the surface of the film through photocatalytic reaction, so that the self-cleaning effect of the product arranged outdoors is improved.

Preferably, the preparation of the step S2 specifically includes the following steps:

s21, preparing a mixed solution A and a mixed solution B;

s22, mixing the mixed solution B and deionized water according to the volume ratio of 18-20: 13, mixing and stirring uniformly to obtain a mixed solution C, and mixing and stirring uniformly the mixed solution A and the mixed solution C according to the volume ratio of 14-17:30 to obtain a sol pretreatment substance;

s23, carrying out heat preservation and aging on the sol pretreatment object in a drying oven at 25-30 ℃ for 45-50 hours to obtain compound sol;

s24, dividing the compound sol prepared in the S23 into 3-5 parts by mass and marking each part of compound sol as a glue throwing solution, wherein each part of glue throwing solution forms a pretreatment layer on one side of the photovoltaic glass substrate provided with the anti-dazzle composite film, and after all glue throwing solutions are compounded, forming a gel composite layer on one side of the photovoltaic glass substrate provided with the anti-dazzle composite film; the preparation of each pretreatment layer is specifically as follows: pouring the spin coating liquid to one side of the photovoltaic glass substrate provided with the anti-dazzle composite film, spin coating the photovoltaic glass substrate for 55-65 s at a rotating speed of 1500-1800 pm, heating for 2-4 min at 95-105 ℃, and taking down and cooling for 55-65 s;

and S25, carrying out ultraviolet treatment on the product treated in the step S24 for 55-65 min, taking out, naturally cooling to room temperature, and forming a self-cleaning film on the side of the photovoltaic glass substrate equipment with the anti-dazzle composite film.

Through adopting above-mentioned technical scheme, can impel the organic component in the self-cleaning film volatilize when this application shines through this ultraviolet ray, impel the gel network structure shrink densification in the film, and then improved product overall structure's stability, the gel composite bed in this application is in addition and is formed through the multicomponent is got rid of the glue solution complex in proper order, impels the connection between each preliminary treatment layer inseparabler after the ultraviolet ray shines, and then has improved product holistic stability.

Preferably, the SiN _x The composite film is made of SiN _x Film A, siN _x Film B, siN _x Film C and SiN _x The film D is formed by sequentially plating and attaching through plasma chemical vapor deposition; the SiN _x Film A is a graded composite film layer with a thickness of 28-29 nm and an increase in refractive index from 1.78 to 1.85, the SiN _x Film B is a graded composite film layer with a thickness of 21.5-22.5 nm and an increase in refractive index from 1.85 to 1.89, the SiN _x Film C is a graded composite film layer with a thickness of 22.0-23.0 nm and an increase in refractive index from 1.89 to 1.93, the SiN _x Film D is a graded composite film layer with a thickness of 26.0-26.5 nm and an increase in refractive index from 1.93 to 1.96.

By adopting the technical scheme, siN in the application _x The composite film is SiN with graded refractive index _x Film A, siN _x Film B, siN _x Film C and SiN _x The film D is compounded and is formed by two adjacent filmsThe refractive indexes are connected end to end, so that the uniformity of film change is further improved; in addition, the SiN with graded refractive index is further reduced _x Composite film further reduces SiN _x The range of the composite film is SiN _x When the thickness of the composite film reaches 100nmn, the waterproof vapor permeation effect of the film is optimal, and SiN is added _x Film A, siN _x Film B, siN _x Film C and SiN _x The water vapor barrier capability of the thickness product of the film D is not obviously increased, and in addition, the defect generated by deposition overshoot can be further improved by adopting a mode of a plurality of gradual change film layers, so that the transmittance of the product is improved, and the anti-dazzle effect of the film D is improved, and meanwhile, the water vapor barrier property of the film D is improved.

Preferably, the SiN _x The preparation of the composite film specifically comprises the following steps:

S151，SiN _x preparing a film A, and adjusting SiH under the conditions of radio frequency power of 200-220W, temperature of 250-300 ℃ and working pressure of 33-34 Pa ₄ Gas flow is 100sccm and NH ₃ Continuously performing high-low frequency alternate plating for 2-3 times under the condition of 30sccm gas flow, and SiH in the plating process ₄ The gas flow rate is increased from 60 to 100sccm and SiH ₄ The gas flow rate is reduced from 95sccm to 30sccm, and finally, siO _x N _y Film B is far away from SiO _x N _y SiN formation on film A side _x A film A;

S152，SiN _x preparing a film B, vacuumizing to 0.05Pa, maintaining the radio frequency power at 200-220W, the temperature at 250-300 ℃ and the working pressure at 31-32 Pa and SiH ₄ NH is regulated under the condition of 100sccm of gas flow ₃ Plating is carried out for 3-5 times after the gas flow is 20sccm, high-low frequency alternate plating is carried out, siH is carried out in the plating process ₄ The gas flow rate is reduced from 30sccm to 20sccm, and finally SiN _x Film A is far from SiO _x N _y SiN formation on film B side _x A film B;

S153，SiN _x preparing a film C, vacuumizing to 0.05Pa, maintaining the radio frequency power at 200-220W, the temperature at 250-300 ℃ and the working pressure at29 to 30Pa and SiH ₄ NH is regulated under the condition of 100sccm of gas flow ₃ High-low frequency alternating plating is carried out for 3-5 times after the gas flow is 13sccm, siH is carried out in the plating process ₄ The gas flow rate is reduced from 20sccm to 13sccm, and finally SiN _x Film B is far away from SiN _x SiN formed on film A side _x A film C;

S154，SiN _x preparing a film D, vacuumizing to 0.05Pa, maintaining the radio frequency power at 200-220W, the temperature at 250-300 ℃ and the working pressure at 27-28 Pa and SiH ₄ NH is regulated under the condition of 100sccm of gas flow ₃ Continuously performing high-low frequency alternate plating and attaching for 9-11 times after the gas flow is 10sccm, and performing SiH (silicon-oxygen) in the plating and attaching process ₄ The gas flow rate is reduced from 13sccm to 10sccm, and finally SiN _x Film C is far from SiN _x SiN with film B thickness of 26-27 nm _x After film D, siN is prepared _x A composite membrane;

wherein each high-low frequency alternate plating in steps S151, S152, S153 and S154 is specifically: plating at radio frequency of 13.56MHz for 10-15 s, and then plating at radio frequency of 100kHz for 5-10 s.

By adopting the technical scheme, in the process of plasma chemical vapor deposition, when in low-frequency plating, silicon-nitrogen bonds formed by tetrahydrosilicon and silicon-hydrogen bonds formed in the reaction process generate compressive stress in deposition overshoot; in the application, the SiN is prepared by high-frequency alternating plating and attaching, so that tensile stress is easy to generate during high-frequency plating and attaching _x Film A, siN _x Film B, siN _x Film C and SiN _x The bond between hydrogen and nitrogen within the film D is no longer unitary, contributing to stress relief of the film. The application limits the plating time of high and low frequency, further improves the stress release effect of the film, and prepares the film with stable structure. The temperature is limited in the application, so that agglomeration of film forming particles after plating is reduced, and further uniform-texture products can be prepared. In addition, because the pressure can influence the speed of the film forming particles to the lining plate, the film forming particles have little window machine at low pressure and have enough time to migrate to the surface to be plated, thereby being beneficial to forming a compact film,in the present application by means of SiN _x Film A, siN _x Film B, siN _x Film C and SiN _x The pressure during the preparation of film D is defined so that SiN _x Film A, siN _x Film B, siN _x Film C and SiN _x The density and the porosity of the film layer formed along the direction deviating from the photovoltaic glass substrate are gradually reduced, so that the film with excellent water vapor barrier property and stability is prepared.

Preferably, the SiO _x N _y The composite film is made of SiO _x N _y Film A and SiO _x N _y The film B is formed by sequentially plating and attaching by plasma chemical vapor deposition, and specifically comprises the following steps:

S141，SiO _x N _y preparing film A at radio frequency of 13.56MHz, radio frequency power of 200-250W, temperature of 230-260 deg.C, working pressure of 25-35 Pa and SiH ₄ The gas flow rate is 60sccm, N ₂ The flow rate of O gas is 5sccm and NH ₃ Plating under the condition of 50sccm gas flow rate, and then coating on SiO ₂ Coating the surface of the film to obtain SiO with refractive index of 1.75 and thickness of 24-25 nm _x N _y A film A;

S142，SiO _x N _y the preparation of the film B maintains the radio frequency of 13.56MHz, the radio frequency power of 200-250W, the temperature of 230-260 ℃ and the working pressure of 25-35 Pa and SiH ₄ NH was adjusted under the condition of a gas flow of 60sccm ₃ Gas flow and N ₂ Plating and attaching the O gas flow, and NH in the plating and attaching process ₃ The gas flow rate is increased from 50 to 95sccm and N ₂ After the O gas flow rate is reduced from 5sccm to 0sccm, the SiO gas is finally cooled _x N _y Film A is far from SiO ₂ SiO is formed on one side of the surface of the film _x N _y Film B, said SiO _x N _y Thickness of film B and the SiN _x The thickness ratio of the film A is 200-201:200.

By adopting the technical scheme, the method comprises the steps of preparing SiO _x N _y The thickness of the film B and the thickness of the SiNx film A are limited, and when the thickness of the two layers tends to be consistent, the thickness of the SiO _x N _y The defect coupling effect between the film B and the SiNx film A is optimal, so that the permeation path between water vapor is prolonged and the permeation path between water vapor is improved. Furthermore, due to SiO _x N _y The porosity of the film will follow that of N ₂ The flow of O gas is increased by increasing the flow of N ₂ The flow rate of O gas is controlled, thereby obtaining SiO with reduced porosity and changed refractive index along the direction away from the photovoltaic glass substrate _x N _y The film further comprehensively improves the waterproof and breathable effects and the anti-dazzle effect of the film.

In summary, the present application has the following beneficial effects:

1. according to the anti-dazzle composite film layer, the composite effect between the photovoltaic glass substrate and the film and between the film and the film is improved, and the stability of the whole structure of the product is further improved; the application discloses SiO with different refractive index variation and thickness _x F _y Film, siO ₂ Film, siO _x N _y Composite film, siN _x The composite film and the self-cleaning film are sequentially compounded, so that a continuous composite film system with excellent anti-reflection effect is prepared, and the glare phenomenon of the photovoltaic panel is weakened.

2. According to the method, the anti-dazzle composite film with excellent anti-dazzle effect is obtained through continuous plating, and the convenience of product production is improved.

Detailed Description

The present application is described in further detail below with reference to examples.

Examples

Example 1

A high-performance anti-glare component comprises a photovoltaic glass substrate (a solar glass raw sheet with the thickness of 3.2mm, the solar transmittance of the solar glass raw sheet is 89.0 percent), an anti-glare composite film compounded on the surface of the photovoltaic glass substrate and a self-cleaning film compounded on one side of the anti-glare composite film far away from the photovoltaic substrate, wherein the anti-glare composite film comprises SiO (silicon dioxide) plated and attached in sequence along the direction away from the photovoltaic glass substrate _x F _y Film, siO ₂ Film, siO _x N _y Composite film and SiN _x And (3) a composite membrane.

A method of processing a high performance anti-glare assembly comprising the steps of:

s1, preparing an anti-dazzle composite film, and continuously plating SiO (silicon dioxide) on the surface of a photovoltaic glass substrate by chemical vapor deposition _x F _y Film, siO ₂ Film, siO _x N _y Composite film and SiN _x The composite membrane is prepared into a pre-composite, which specifically comprises the following steps:

s11, preprocessing a photovoltaic glass substrate, namely cleaning and drying the photovoltaic glass substrate, then sending the photovoltaic glass substrate into a chamber of a plasma chemical vapor deposition device (the plasma chemical vapor deposition device is optionally purchased from a plasma CVD device sold by Sesamum corporation and having the model of PD-3800L), preheating to 250 ℃, vacuumizing to 0.05Pa, heating to 250 ℃, and preserving heat for 15 minutes;

S12，SiO _x F _y coating film by plasma chemical vapor deposition equipment at radio frequency of 13.56MHz, radio frequency power of 200W, temperature of 250deg.C, working pressure of 30Pa, siH ₄ The gas flow rate is 60sccm, N ₂ The flow rate of O gas (purity more than or equal to 99.9%) is 35sccm and C ₂ F ₆ Under the condition of the flow rate of the gas (the purity is more than or equal to 99.9%) being 20sccm, the SiO with the refractive index of 1.40 is obtained after the coating for 306s at the speed of 19.2nm/min _x F _y A film;

S13，SiO ₂ preparing a film, namely preparing the film by using plasma chemical vapor deposition equipment at the radio frequency of 13.56MHz, the radio frequency power of 200W, the temperature of 250 ℃ and the working pressure of 30Pa and SiH ₄ The flow rate of the gas (purity is more than or equal to 99.9%) is 60sccm and N ₂ Plating at a rate of 24.8nm/min for 227s under the condition of a flow rate of O gas (purity of 99.9% or more) of 40sccm to obtain SiO with a refractive index of 1.46 ₂ A film;

S14，SiO _x N _y preparation of composite film, siO _x N _y The composite film is formed by sequentially plating and attaching SiO ₂ Film away from SiO _x F _y SiO on one side of the film _x N _y Film A and SiO _x N _y The film B comprises the following steps:

S141，SiO _x N _y preparing a film A, vacuumizing to 0.05Pa, and performing plasma chemical vapor deposition on the film A at a radio frequency of 13.56MHz, a radio frequency power of 200W, a temperature of 250 ℃ and a working pressure of 30Pa and SiH by using plasma chemical vapor deposition equipment ₄ The flow rate of the gas (purity is more than or equal to 99.9%) is 60sccm and N ₂ The flow rate of O gas (purity is more than or equal to 99.9%) is 5sccm and NH ₃ Plating at 19.5nm/min for 74s under the condition of gas (purity more than or equal to 99.9%) flow rate of 50sccm, and then performing SiO ₂ Plating the surface of the film to obtain the film with the refractive index of n ₁ SiO of (2) _x N _y Film A, and n ₁ ＝1.75；

S142，SiO _x N _y Preparing a film B, vacuumizing to 0.05Pa, maintaining the radio frequency at 13.56MHz, the radio frequency power at 200W, the temperature at 250 ℃ and the working pressure at 30Pa and SiH ₄ The gas flow is 60sccm, and NH is adjusted ₃ Gas flow rate of 95sccm and N ₂ After the O gas flow is 0sccm and the plating is carried out for 86 seconds at the speed of 20.2nm/min, NH is carried out in the plating process ₃ The gas flow rate is increased from 50 to 95sccm and N ₂ The O gas flow rate is reduced from 5sccm to 0sccm, and finally, the SiO gas flow rate is reduced to _x N _y Film A is far from SiO ₂ A refractive index n is formed on one side of the surface of the film ₂ SiO of (2) _x N _y Film B, wherein 1.75 < n ₂ Less than 1.78, and as the plating time increases, n ₂ The value of (2) is increasing;

S15，SiN _x preparation of composite film, siN _x The composite film is formed by sequentially plating and attaching SiO _x N _y Composite film is far away from SiO ₂ SiN film side and 28.9nm thickness _x Film A, siN with thickness of 22.0nm _x Film B, siN with thickness of 22.8nm _x Film C and SiN with a thickness of 26.3nm _x The film D comprises the following steps:

S151，SiN _x preparing a film A, vacuumizing to 0.05Pa, maintaining the conditions of radio frequency power of 200W, temperature of 280 ℃ and working pressure of 33Pa, and adjusting SiH ₄ (purity of 99.9% or more) gas flow rate of 100sccm and NH ₃ Continuously carrying out high-low frequency alternate plating for 4 times under the condition that the flow rate of gas (the purity is more than or equal to 99.9%) is 30sccm,SiH during plating ₄ The gas flow rate is increased from 60 to 100sccm and SiH ₄ The gas flow rate is reduced from 95sccm to 30sccm, and finally, siO _x N _y Film B is far away from SiO _x N _y Film A was formed to a thickness of 28.9nm and a refractive index n ₃ SiN of (2) _x Film A, wherein 1.78 < n ₃ Less than 1.85, and as the plating time increases, n ₃ The value of (2) is increasing; wherein each high-low frequency alternating plating attachment specifically comprises the following steps: after 14s is plated at a radio frequency of 13.56MHz, 7s is plated at a radio frequency of 100 kHz.

S152，SiN _x Preparing a film B, vacuumizing to 0.05Pa, maintaining the radio frequency power at 200W and the temperature of 280 ℃ and the working pressure at 31Pa and SiH ₄ NH is regulated under the condition of 100sccm of gas flow ₃ Continuously performing high-low frequency alternate plating for 4 times after the gas flow is 20sccm, and performing SiH during the plating process ₄ The gas flow rate is reduced from 30sccm to 20sccm, and finally SiN _x Film A is far from SiO _x N _y Film B side formed to a thickness of 22.0nm and refractive index n ₄ SiN of (2) _x Film B, wherein 1.85 < n ₄ Less than 1.89, and as the plating time increases, n ₄ The numerical value of (2) is continuously increased, and each time of high-low frequency alternating plating is carried out by plating for 14s at a radio frequency of 13.56MHz and then plating for 7s at a radio frequency of 100 kHz;

S153，SiN _x preparing a film C, vacuumizing to 0.05Pa, maintaining the radio frequency power at 200W and the temperature of 280 ℃ and the working pressure at 29Pa and SiH ₄ NH is regulated under the condition of 100sccm of gas flow ₃ Continuously performing high-low frequency alternate plating for 4 times after the gas flow is 13sccm, and performing SiH during the plating process ₄ The gas flow rate is reduced from 20sccm to 13sccm, and finally SiN _x Film B is far away from SiN _x Film A side formed to a thickness of 22.8nm and refractive index n ₅ SiN of (2) _x Film C, wherein 1.89 < n ₅ Less than 1.93, and as the plating time increases, n ₅ The numerical value of (2) is continuously increased, and each time of high-low frequency alternating plating is carried out by plating for 14s at a radio frequency of 13.56MHz and then plating for 7s at a radio frequency of 100 kHz;

S154，SiN _x preparing a film D, vacuumizing to 0.05Pa, maintaining the radio frequency power at 200W and the temperature of 280 ℃ and the working pressure at 27Pa and SiH ₄ NH is regulated under the condition of 100sccm of gas flow ₃ Plating is continuously carried out for 10 times after the gas flow is 10sccm, and SiH is carried out in the plating process ₄ The gas flow rate is reduced from 13sccm to 10sccm, and finally SiN _x Film C is far from SiN _x Film B has a thickness of 26.3nm and a refractive index n ₆ SiN of (2) _x Film D, wherein 1.93 < n ₆ Less than 1.96, and as the plating time increases, n ₅ The numerical value of (2) is continuously increased, and each time of high-low frequency alternate plating is carried out, namely, after 14s is plated by using a radio frequency of 13.56MHz, 7s is plated by using a radio frequency of 100kHz to prepare a pre-compound;

s2, siN _x Film D is far from SiN _x A self-cleaning film is compounded on one side of the film C, wherein the preparation of the self-cleaning film specifically comprises the following steps of;

s21, preparing a mixed solution A and a mixed solution B respectively,

the preparation of the mixed solution A specifically comprises the following steps: mixing and stirring 0.6L of butyl titanate, 0.15L of triethanolamine, 3.75L of absolute ethyl alcohol and 0.15L of acetylacetone uniformly; adding 9.2L of absolute ethyl alcohol and 18.4L of deionized water, mixing and stirring for 10 hours at a rotating speed of 300rpm to obtain a mixed solution A;

the preparation of the mixed solution B specifically comprises the following steps: preparing tetraethyl silicate, absolute ethyl alcohol and deionized water in a volume ratio of 2:3:5, mixing and stirring the tetraethyl silicate and the absolute ethyl alcohol for 40min, adding ionized water, and continuously stirring until the solution becomes milky; adding ammonia water to control the pH=10 of the solution, and continuously stirring until the solution becomes transparent to obtain a mixed solution B;

s22, mixing and stirring 38.7L of mixed solution B and 25.8L of deionized water at a rotation speed of 1200rpm for 25min to obtain mixed solution C, and mixing and stirring all mixed solution A into mixed solution C (the volume ratio of the mixed solution C to all mixed solution A is 30:15) at a rotation speed of 200rpm to obtain a sol pretreatment substance;

s23, carrying out heat preservation and aging on the sol pretreatment object in a drying oven at 25 ℃ for 48 hours to obtain compound sol;

s24, arranging the pre-compound after the treatment of S1 on a spin coater, dividing the compound sol into four parts with equal mass, marking each part of compound sol as a spin-coating liquid, and coating each part of spin-coating liquid on SiN _x Film D is far from SiN _x A pretreatment layer is formed on one side of the film C, and SiN is formed after all the spin-coating liquid is compounded _x Film D is far from SiN _x Forming a gel composite layer on one side of the film C; the preparation of each pretreatment layer comprises the following steps: pouring the spin-coating solution into SiN of the pre-composite _x Film D is far from SiN _x Spin-coating the film C at 1600rpm for 60s, heating on a hot plate at 100deg.C for 3min, and cooling for 60s;

s25, carrying out ultraviolet treatment on the pre-composite compounded with the gel composite layer for 60min by a high-pressure mercury lamp with the power of 1kW and the dominant wavelength of 365nm, taking out, naturally cooling to room temperature to obtain a self-cleaning film with the thickness of 97.9nm and the refractive index of 1.40, and finally obtaining a product with the glossiness of 11GU and the roughness (Ra) of 0.42+/-0.05 microns, wherein the distance between the gel pre-treatment layer and the high-pressure pump lamp in the ultraviolet treatment process is 4cm.

Example 2

The embodiment of the present application is different from embodiment 1 in that the embodiment of the present application replaces butyl titanate with an equal volume of deionized water during the preparation of the mixed solution a in step S21.

Example 3

The embodiment of the present application is different from the embodiment 1 in that the tetraethyl silicate is replaced with an equal volume of deionized water during the preparation of the mixed liquor B in step S21.

Example 4

The embodiment of the present application is different from embodiment 1 in that step S22 of the present application specifically includes: mixing and stirring 38.7L of mixed solution B and 25.8L of deionized water at a rotation speed of 1200rpm for 25min to obtain mixed solution C, adding 30.1L of mixed solution A into mixed solution C (the volume ratio of the mixed solution C to the mixed solution A of 30.1 is 30:14), and uniformly mixing and stirring at a rotation speed of 200rpm to obtain a sol pretreatment.

Example 5

The embodiment of the present application is different from embodiment 1 in that, unlike embodiment 1, step S21 and step S21 of the present application are different from embodiment 1, and the preparation of the mixed solution a in step S21 in the embodiment of the present application is specifically: mixing and stirring 0.9L of butyl titanate, 0.225L of triethanolamine, 5.625L of absolute ethyl alcohol and 0.225L of acetylacetone uniformly; 13.8L of absolute ethyl alcohol and 27.6L of deionized water are added, mixed and stirred for 10 hours at the rotating speed of 300rpm to obtain a mixed solution A; the step S23 of the present application specifically includes: mixing and stirring 38.7L of mixed solution B and 25.8L of deionized water at a rotation speed of 1200rpm for 25min to obtain mixed solution C, adding 36.55L of mixed solution A into the mixed solution C (the volume ratio of the mixed solution C to 36.55L of the mixed solution A is 30:17), and uniformly mixing and stirring at a rotation speed of 200rpm to obtain a sol pretreatment.

Example 6

The embodiment of the present application is different from embodiment 1 in that step S25 of the present application specifically includes: the pre-compound compounded with the gel compound layer is heated in a muffle furnace at 450 ℃ for 2.1h to prepare the self-cleaning film with the thickness of 97.9nm and the refractive index of 1.39.

Example 7

The embodiment of the present application is different from embodiment 1 in that the present application replaces the high-low frequency alternate plating in the embodiment with the radio frequency plating 21S of 13.56MHz in steps S151, S152, S153 and S154.

Example 8

The embodiment of the present application is different from embodiment 1 in that the present application replaces the high-low frequency alternate plating in the embodiment with the radio frequency plating 21S of 100kHz in steps S151, S152, S153 and S154.

Example 9

The embodiment of the present application is different from embodiment 1 in that each high-low frequency alternating plating in the present application is specifically: plating for 12s at a radio frequency of 13.56MHz and then for 9s at a radio frequency of 100 kHz.

Example 10

The embodiment of the present application is different from embodiment 1 in that each high-low frequency alternating plating in the present application is specifically: plating for 15s at a radio frequency of 13.56MHz and then for 6s at a radio frequency of 100 kHz.

Example 11

The embodiment of the present application differs from embodiment 1 in that the present application is for preparing SiN _x Film A, siN _x Film B, siN _x Film C and SiN _x The pressure at the time of film D was 30Pa.

Example 12

The embodiment of the present application differs from embodiment 1 in that the present application is plated at a rate of 19.5nm/min for 74S in step S142.

Example 13

The difference between this example and example 1 is the preparation of self-cleaning film, which is specifically: through plasma chemical vapor deposition equipment, the working pressure is 30Pa and SiH is carried out at the radio frequency of 13.56MHz, the radio frequency power of 200W and the temperature of 250 DEG C ₄ The gas flow rate is 60sccm, N ₂ The flow rate of O gas (purity more than or equal to 99.9%) is 35sccm and C ₂ F ₆ Under the condition that the flow rate of gas (the purity is more than or equal to 99.9%) is 20sccm, the self-cleaning film with the refractive index of 1.40 is obtained after the self-cleaning film is coated for 306s at the speed of 19.2 nm/min.

Comparative example

Comparative example 1

This comparative example is different from example 1 in that the operation of step S11 is not performed.

Comparative example 2

This comparative example is different from example 1 in that the operation of step S2 is not performed, i.e., the self-cleaning film is not plated.

Performance test

Detection method/test method

1. Light transmittance test: the products prepared in examples 1-13 and comparative examples 1-2 were taken to be plated with an antiglare composite film and a self-cleaning film at random four positions, the transmittance of each position was measured by a spectrometer for each of the four positions of each product, and the average value of the transmittance of each product was calculated and used as the solar transmittance of the block of products.

2. Self-cleaning performance: the water contact angles of the respective positions were measured by a contact angle meter for two positions of each of the products obtained in examples 1 to 13 and comparative examples 1 to 2, and the average water contact angles of the 2 values were calculated and used as the water contact angle to the glass piece.

3. Wet heat resistance: the products prepared in examples 1 to 13 and comparative examples 1 to 2 were tested in a humidity-resistant test chamber at a temperature of 85.+ -. 2 ℃ and a humidity of 85%, and after 1000 hours, taken out, and the solar light transmittance of the products was measured.

TABLE 1 summary of the results of the measurements of examples 1-13 and comparative examples 1-2

As can be seen by combining examples 1 to 6, example 13 and comparative example 2 and by combining table 1, the solar transmittance of the products prepared in the examples of the present application is greater than 91%; the products prepared in the examples 1 and 4-5 have better comprehensive properties than the products prepared in the examples 2-3, 13 and 2, so that the self-cleaning film adopted by the products adopts tetraethyl silicate and butyl titanate as raw materials, the comprehensive properties of the products can be improved, and the comprehensive properties of the products are optimal when the volume ratio of the adopted mixed solution C to the whole mixed solution A is 30:15.

As can be seen from the combination of examples 1, examples 7 to 12 and comparative example 1 and table 1, the products prepared in examples 1 and examples 9 to 10 have better overall properties than the products prepared in examples 7 to 8, so that the overall properties of the products can be improved by using high-frequency and low-frequency alternate plating, and the overall properties of the products are optimal when the ratio of the high-frequency plating time to the low-frequency plating time is 2:1.

The present embodiment is merely illustrative of the present application and is not intended to be limiting, and those skilled in the art, after having read the present specification, may make modifications to the present embodiment without creative contribution as required, but is protected by patent laws within the scope of the claims of the present application.

Claims (8)

1. The high-performance anti-dazzle assembly is characterized by comprising a photovoltaic glass substrate, an anti-dazzle composite film compounded on the surface of the photovoltaic glass substrate and a self-cleaning film compounded on one side of the anti-dazzle composite film far away from the photovoltaic glass substrate, wherein the anti-dazzle composite film comprises SiO (silicon dioxide) compounded in sequence along the direction deviating from anti-dazzle _x F _y Film, siO ₂ Film, siO _x N _y Composite film and SiN _x Composite film of SiO _x F _y The refractive index of the film is 1.38-1.40 and the thickness is 96-98 nm; the SiO is ₂ The refractive index of the film is 1.45-1.47 and the thickness is 92-95 nm; the SiO is _x N _y The refractive index of the composite film is 1.74-1.78 and the thickness is 52-54 nm; the SiN _x The refractive index of the composite film is 1.78-1.96 and the thickness is 95-105 nm; the refractive index of the self-cleaning film is 1.38-1.40, and the thickness is 96-98 nm.

2. The method for processing the high-performance anti-glare component of claim 1, comprising the steps of:

s1, preparing an anti-dazzle composite film, namely cleaning and drying a photovoltaic glass substrate, drying the photovoltaic glass substrate at 100-120 ℃, vacuumizing the photovoltaic glass substrate to 0.05Pa at 240-300 ℃, carrying out heat preservation treatment for 8-16 min, and then sequentially plating SiO at 240-300 DEG C _x F _y Film, siO ₂ Film, siO _x N _y Composite film and SiN _x A composite membrane;

s2, siN _x Composite film is far away from SiO _x N _y And (5) compounding a self-cleaning film on one side of the composite film to obtain the product.

3. The method for processing a high performance anti-glare assembly according to claim 2, wherein the self-cleaning film is prepared from the following raw materials: mixed solution A, mixed solution B and deionized water; wherein the mixed solution A is formed by mixing butyl titanate, triethanolamine, acetylacetone, absolute ethyl alcohol and deionized water according to the volume ratio of 12:3:3:80-82:36-38; wherein the mixed solution B is prepared from the following raw materials: the volume ratio of the tetraethyl silicate, the absolute ethyl alcohol, the deionized water and the ammonia water for preparing the mixed solution B is 18-23:30:50.

4. The method for processing a high-performance anti-glare component according to claim 3, wherein the preparation of the mixed solution B specifically comprises: and (3) firstly mixing and stirring the tetraethyl silicate and the absolute ethyl alcohol uniformly according to the metering ratio, adding the metered deionized water, mixing and stirring uniformly, adding ammonia water to control the pH value of the solution to be 9-10, and mixing and stirring until the solution becomes transparent to obtain a mixed solution B.

5. The method for manufacturing a high performance anti-glare assembly according to claim 4, wherein the step S2 comprises the steps of:

s21, preparing a mixed solution A and a mixed solution B;

s22, mixing the mixed solution B and deionized water according to the volume ratio of 18-20: 13, mixing and stirring uniformly to obtain a mixed solution C, and mixing and stirring uniformly the mixed solution A and the mixed solution C according to the volume ratio of 14-17:30 to obtain a sol pretreatment substance;

s23, carrying out heat preservation and aging on the sol pretreatment object in a drying oven at 25-30 ℃ for 45-50 hours to obtain compound sol;

s24, dividing the compound sol prepared in the S23 into 3-5 parts by mass and marking each part of compound sol as a glue throwing solution, wherein each part of glue throwing solution forms a pretreatment layer on one side of the photovoltaic glass substrate provided with the anti-dazzle composite film, and after all glue throwing solutions are compounded, forming a gel composite layer on one side of the photovoltaic glass substrate provided with the anti-dazzle composite film; the preparation of each pretreatment layer is specifically as follows: pouring the spin coating liquid to one side of the photovoltaic glass substrate provided with the anti-dazzle composite film, spin coating the photovoltaic glass substrate for 55-65 s at a rotating speed of 1500-1800 pm, heating for 2-4 min at 95-105 ℃, and taking down and cooling for 55-65 s;

and S25, carrying out ultraviolet treatment on the product treated in the step S24 for 55-65 min, taking out, naturally cooling to room temperature, and forming a self-cleaning film on the side of the photovoltaic glass substrate on which the anti-dazzle composite film is arranged.

6. The method of processing a high performance anti-glare assembly of claim 2 wherein the SiN _x The composite film is made of SiN _x Film A, siN _x Film B, siN _x Film C and SiN _x The film D is formed by sequentially plating and attaching through plasma chemical vapor deposition; the SiN _x Film A is a graded composite film layer with a thickness of 28-29 nm and an increase in refractive index from 1.78 to 1.85, the SiN _x Film B is a graded composite film layer with a thickness of 21.5-22.5 nm and an increase in refractive index from 1.85 to 1.89, the SiN _x Film C is a graded composite film layer with a thickness of 22.0-23.0 nm and an increase in refractive index from 1.89 to 1.93, the SiN _x Film D is a graded composite film layer with a thickness of 26.0-26.5 nm and an increase in refractive index from 1.93 to 1.96.

7. The method of processing a high performance anti-glare assembly of claim 6 wherein the SiO _x N _y The composite film is made of SiO _x N _y Film A and SiO _x N _y The film B is formed by sequentially plating and attaching by plasma chemical vapor deposition, and specifically comprises the following steps:

S141，SiO _x N _y preparing film A at radio frequency of 13.56MHz, radio frequency power of 200-250W, temperature of 230-260 deg.C, working pressure of 25-35 Pa and SiH ₄ The gas flow rate is 60sccm, N ₂ The flow rate of O gas is 5sccm and NH ₃ Plating under the condition of 50sccm gas flow rate, and then coating on SiO ₂ Coating the surface of the film to obtain SiO with refractive index of 1.75 and thickness of 24-25 nm _x N _y A film A;

S142，SiO _x N _y the preparation of the film B maintains the radio frequency of 13.56MHz, the radio frequency power of 200-250W, the temperature of 230-260 ℃ and the working pressure of 25-35 Pa and SiH ₄ NH was adjusted under the condition of a gas flow of 60sccm ₃ Gas flow and N ₂ Plating and attaching the O gas flow, and NH in the plating and attaching process ₃ The gas flow rate is increased from 50sccm to 95sccm and N ₂ The O gas flow rate is reduced from 5sccm to 0sccmAfter that, finally at SiO _x N _y Film A is far from SiO ₂ SiO is formed on one side of the surface of the film _x N _y Film B, said SiO _x N _y Thickness of film B and the SiN _x The thickness ratio of the film A is 200-201:200.

8. The method of processing a high performance anti-glare assembly of claim 7 wherein the SiN _x The preparation of the composite film specifically comprises the following steps:

S151，SiN _x preparing a film A, and adjusting SiH under the conditions of radio frequency power of 200-220W, temperature of 250-300 ℃ and working pressure of 33-34 Pa ₄ Gas flow is 100sccm and NH ₃ Continuously performing high-low frequency alternate plating for 2-3 times under the condition of 30sccm gas flow, and SiH in the plating process ₄ The gas flow rate is increased from 60 to 100sccm and SiH ₄ The gas flow rate is reduced from 95sccm to 30sccm, and finally, siO _x N _y Film B is far away from SiO _x N _y SiN formation on film A side _x A film A;

S152，SiN _x preparing a film B, vacuumizing to 0.05Pa, maintaining the radio frequency power at 200-220W, the temperature at 250-300 ℃ and the working pressure at 31-32 Pa and SiH ₄ NH is regulated under the condition of 100sccm of gas flow ₃ High-low frequency alternating plating is carried out for 3 to 5 times after the gas flow is 20sccm, and SiH is carried out in the plating process ₄ The gas flow rate is reduced from 30sccm to 20sccm, and finally SiN _x Film A is far from SiO _x N _y SiN formation on film B side _x A film B;

S153，SiN _x preparing a film C, vacuumizing to 0.05Pa, maintaining the radio frequency power at 200-220W, the temperature at 250-300 ℃ and the working pressure at 29-30 Pa and SiH ₄ NH is regulated under the condition of 100sccm of gas flow ₃ High-low frequency alternating plating is carried out for 3-5 times after the gas flow is 13sccm, siH is carried out in the plating process ₄ The gas flow rate is reduced from 20sccm to 13sccm, and finally SiN _x Film B is far away from SiN _x SiN formation on film A side _x A film C;

S154，SiN _x preparing a film D, vacuumizing to 0.05Pa, maintaining the radio frequency power at 200-220W, the temperature at 250-300 ℃ and the working pressure at 27-28 Pa and SiH ₄ NH is regulated under the condition of 100sccm of gas flow ₃ Continuously performing high-low frequency alternate plating and attaching for 9-11 times after the gas flow is 10sccm, and performing SiH (silicon-oxygen) in the plating and attaching process ₄ Reducing the gas flow from 13sccm to 10sccm, and finally forming a SiNx film D on one side of the SiNx film C far away from the SiNx film B to prepare a SiNx composite film;

wherein each high-low frequency alternate plating in steps S151, S152, S153 and S154 is specifically: plating at radio frequency of 13.56MHz for 10-15 s, and then plating at radio frequency of 100kHz for 5-10 s.