CN114883786A - Silicon-based millimeter wave magnetoelectric dipole antenna - Google Patents
Silicon-based millimeter wave magnetoelectric dipole antenna Download PDFInfo
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- CN114883786A CN114883786A CN202210471653.2A CN202210471653A CN114883786A CN 114883786 A CN114883786 A CN 114883786A CN 202210471653 A CN202210471653 A CN 202210471653A CN 114883786 A CN114883786 A CN 114883786A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q9/00—Electrically-short antennas having dimensions not more than twice the operating wavelength and consisting of conductive active radiating elements
- H01Q9/04—Resonant antennas
- H01Q9/16—Resonant antennas with feed intermediate between the extremities of the antenna, e.g. centre-fed dipole
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/36—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/36—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
- H01Q1/38—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith formed by a conductive layer on an insulating support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/50—Structural association of antennas with earthing switches, lead-in devices or lightning protectors
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Abstract
The invention discloses a silicon-based millimeter wave magnetoelectric dipole antenna, which comprises 2 rectangular silicon-based media with different metallization patterns plated on the upper and lower surfaces, wherein the upper and lower layers of the rectangular silicon-based media are laminated, the lower layer of the silicon-based media is integrated with a substrate integrated waveguide feed structure with a short-circuited end, the upper layer of the silicon-based media is integrated with a magnetoelectric dipole antenna structure, the two structures are coupled through a gap, the substrate integrated waveguide feed structure with the short-circuited end adopts a substrate integrated waveguide form, the structure is completely formed by a metallization through hole array in the silicon-based media with the metallized upper and lower surfaces, the substrate integrated waveguide feed structure and the microstrip circuit realize zero-gap integration, and the radiation structure on the upper layer comprises an electric dipole antenna and a magnetic dipole antenna. The invention meets the application of large-scale millimeter wave phased array system communication and radar systems.
Description
Technical Field
The invention relates to an antenna and a microwave technology, in particular to a silicon-based millimeter wave magnetoelectric dipole antenna.
Background
High speed and broadband are development directions of wireless communication and radar systems, the current increasingly crowded low-frequency band spectrum cannot meet the development requirement, and the millimeter wave frequency band with rich spectrum resources is undoubtedly the inevitable choice for future communication and detection. Millimeter-wave antennas have attracted considerable attention and research interest as key components of millimeter-wave systems. The magnetoelectric dipole antenna is an antenna formed by an electric dipole and a magnetic dipole which are simultaneously excited, and the directional diagrams of the two dipole antennas are crossed with each other on an E surface and an H surface, so that the directional diagrams of the antenna are highly consistent on two planes, and the magnetoelectric dipole antenna has the advantages of large bandwidth, stable gain, low cross polarization, small backward radiation and the like, thereby having important application prospects in the fields of communication, detection, broadcasting, military application and the like. However, when operating in the millimeter wave frequency band, the conventional magnetoelectric dipole antenna faces many challenges, such as increased loss, difficult feeding, complex structure, high manufacturing cost, and the like.
In order to solve these problems, many experts and scholars propose some novel millimeter wave magnetoelectric dipole antenna forms. Although the antennas are greatly improved in bandwidth and gain, common PCB printed board materials are mostly adopted, so that the antennas are large in size and limited in processing precision, are not beneficial to being applied to a millimeter wave higher frequency band (such as a W band), and are difficult to form an array to be applied to a current advanced phased array system. In particular, since the phased array antenna is often required to be interconnected with a back-end active circuit to form a specific angle scanning function, it is necessary to research a millimeter wave magnetoelectric dipole antenna which has wide angle scanning and is easy to integrate.
Disclosure of Invention
Aiming at the problems in the prior art, the invention provides a silicon-based millimeter wave magnetic electric dipole antenna which meets the requirements of large-scale millimeter wave phased array system communication and radar system application.
The purpose of the invention is realized by the following technical scheme.
A silicon-based millimeter wave magnetoelectric dipole antenna comprises 2 rectangular silicon-based media with different metallization patterns plated on the upper and lower surfaces, wherein a substrate integrated waveguide feed structure with a short-circuited end is integrated on the lower silicon-based media, a magnetoelectric dipole antenna structure is integrated on the upper silicon-based media, the two structures are coupled through a gap, the substrate integrated waveguide feed structure with the short-circuited end adopts a substrate integrated waveguide form, structurally and completely consists of a metallization through hole array inside the silicon-based media with the metallization on the upper and lower surfaces, the substrate integrated waveguide feed structure and the magnetoelectric dipole antenna are integrated without a gap with a microstrip circuit, and a radiation structure on the upper layer comprises an electric dipole antenna and a magnetic dipole antenna.
The silicon-based medium is high-resistance silicon, and the dielectric constant is 11.9.
The electric dipole antenna is characterized in that 4 corner cut rectangular metalized patches which are mirrored in pairs are plated on the upper surface of the upper-layer silicon-based medium, and each corner cut rectangular metalized patch is connected with the upper surface of the lower-layer silicon-based medium through 4 metalized through holes, namely the lower surface of the upper-layer silicon-based medium.
The magnetic dipole antenna is an H-shaped slot etched on the upper surface of the lower silicon-based medium and is positioned right below the 4 corner-cut rectangular metallized patches.
Electromagnetic waves are fed in from the lower substrate integrated waveguide and are coupled into the upper silicon-based medium through the H-shaped gap on the upper surface of the lower silicon-based medium, so that excitation of the upper electric dipole antenna and the upper magnetic dipole antenna is realized simultaneously.
Compared with the prior art, the invention has the advantages that: the invention adopts the corner-cut rectangular metallized patch and the H-shaped gap, thereby being capable of obviously increasing the bandwidth of the antenna. The antenna adopts silicon as a dielectric material, is compatible with the existing silicon-based CMOS (complementary metal oxide semiconductor) process, and is very suitable for being integrated with a millimeter wave microcircuit. The antenna has small size and simple structure, is easy to form a one-dimensional array, and has important engineering application value in the phased array radar.
Drawings
Fig. 1 is a side view of a silicon-based millimeter wave magnetoelectric dipole antenna according to the present invention.
Fig. 2 is a metallization pattern of an upper surface of an upper silicon-based medium of the silicon-based millimeter wave magnetoelectric dipole antenna according to the present invention.
Fig. 3 is a metallization pattern of the upper surface of the lower silicon-based medium of the silicon-based millimeter wave magnetoelectric dipole antenna according to the present invention.
Fig. 4 is a lower surface metallization pattern of a lower silicon-based medium of the silicon-based millimeter wave magnetoelectric dipole antenna according to the present invention.
Fig. 5 is a simulation result of voltage standing wave ratio and antenna gain of a silicon-based millimeter wave magnetoelectric dipole antenna according to the present invention.
Fig. 6 is a simulation result of an E-plane directional pattern of a silicon-based millimeter wave magnetoelectric dipole antenna according to the present invention.
Fig. 7 is a simulation result of an H-plane directional pattern of a silicon-based millimeter wave magnetoelectric dipole antenna according to the present invention.
Fig. 8 is a simulation result of the active voltage standing-wave ratio of the silicon-based millimeter wave magnetoelectric dipole antenna according to the present invention.
In the figure: 1-an upper silicon-based dielectric; 2-lower silicon-based dielectric; 3-metalizing the through holes; 4a, 4b, 4c, 4 d-corner cut rectangular metallized patches; 5-H type gap.
Detailed Description
The invention is described in detail below with reference to the drawings and specific examples.
The magnetoelectric dipole antenna is composed of an upper silicon-based medium layer and a lower silicon-based medium layer. The lower silicon-based medium is integrated with a substrate integrated waveguide feed structure with a short circuit at the tail end, the upper silicon-based medium is integrated with a magnetoelectric dipole antenna structure, and the two structures are coupled through a gap. The lower layer feed structure adopts a substrate integrated waveguide form, is a guided wave structure with the characteristics of low insertion loss, low radiation and low cost, is structurally completely composed of metalized through hole arrays in silicon-based media with metalized upper and lower surfaces, can be accurately realized by utilizing a silicon-based processing technology, can realize zero-gap integration with a microstrip circuit, and is very suitable for the design and mass production of microwave and millimeter wave integrated circuits. The radiation structure of the upper layer is composed of an electric dipole antenna and a magnetic dipole antenna. The 4 corner-cut rectangular metallized patches which are positioned on the upper surface of the upper silicon-based medium and are in mirror image pairwise are respectively connected with the lower surface of the lower silicon-based medium (namely the lower surface of the upper silicon-based medium) through 4 metallized through holes, and are equivalent to an electric dipole antenna in function. An H-shaped gap is etched on the upper surface of the lower silicon-based medium, is positioned right below the 4 corner-cut rectangular metallized patches and is equivalent to a magnetic dipole antenna in function. Electromagnetic waves are fed in from the lower substrate integrated waveguide and are coupled into the upper silicon-based medium through the H-shaped gap on the upper surface of the lower silicon-based medium, so that excitation of the upper electric dipole antenna and the upper magnetic dipole antenna is realized simultaneously. The invention adopts a rectangular metalized patch with a cut angle, and aims to guide the current in the rectangular patch to bend, excite a plurality of modes and form a resonant circuit. Due to the introduction of a new resonance point, the effect of widening the bandwidth can be achieved by mutually crossing a plurality of resonance bandwidths. The invention forms the H-shaped slot by opening two symmetrical slots on two sides of the rectangular slot, and aims to increase the coupling strength between the upper corner-cut rectangular metallized patch and the lower substrate integrated waveguide feed structure, thereby further widening the bandwidth of the antenna. It should be noted that the invention uses silicon-based medium as the medium material of the antenna, because the silicon dielectric constant is large, it is beneficial to realize the miniaturization of the antenna, and it is suitable for forming the array and applying to the phased array system with the restriction requirement on the volume size.
Examples
Referring to fig. 1-4, the silicon-based millimeter wave magnetic dipole provided by the invention is formed by vertically laminating a rectangular silicon-based medium 1 and a rectangular silicon-based medium 2. The silicon-based medium 1 and the silicon-based medium 2 both adopt high-resistance silicon materials, the dielectric constant of the silicon-based medium is usually 11.9, and the silicon-based medium is compatible with the existing CMOS silicon-based process. The upper surface of the silicon-based medium 1, the upper surface of the silicon-based medium 2 (i.e. the lower surface of the silicon-based medium 1) and the lower surface of the silicon-based medium 2 are plated with gold to form a specific metallization pattern, as shown by the shaded portion in the figure.
The upper and lower surfaces of the silicon-based medium 2 are plated with gold, and an array formed by arranging the metalized through holes 3 is etched inside, so that a substrate integrated waveguide feed structure with a short circuit at the tail end is formed.
The upper surface of the silicon-based medium 1 is plated with 4 corner-cut rectangular metalized patches 4a, 4b, 4c and 4d which are mirrored in pairs, and each corner-cut rectangular metalized patch is connected with the upper surface of the silicon-based medium 2 (namely the lower surface of the upper silicon-based medium) through 4 metalized through holes 3, so that an electric dipole antenna is formed.
The upper surface of the silicon-based medium 2 is etched with an H-shaped gap 5 which is positioned right below the 4 corner-cut rectangular metallized patches, thereby forming a magnetic dipole antenna.
The advantages of the invention can be further illustrated by simulations:
the invention adopts ANSYS HFSS electromagnetic simulation software to carry out analysis simulation of a typical example of the antenna model. The structural parameters of the antenna are finally determined by comprehensively optimizing the structural parameters of the silicon-based medium 1, the silicon-based medium 2, the metalized through holes 3, the corner-cut rectangular metalized patches 4a, 4b, 4c and 4d and the H-shaped slot 5. This example operates in the W band.
Simulation software ANSYS HFSS is used to perform simulation calculation on the voltage standing wave ratio and the antenna gain of the above example within the range of 80-110 GHz, and the result is shown in FIG. 5. Simulation results show that the voltage standing wave ratio of the antenna is lower than 2 and the relative working bandwidth reaches 23% in the frequency range from 87.5GHz to 110 GHz. The gain of the antenna reaches 8.2dB in the working bandwidth range, and the gain flatness is within +/-0.25 dB.
Simulation calculation is carried out on the directional diagram of the example at three frequency points of 88GHz, 99GHz and 110GHz by using simulation software ANSYS HFSS, and the result is shown in FIGS. 6 and 7. Simulation results show that the E-plane directional diagram and the H-plane directional diagram of the antenna have good symmetry, and the cross polarization reaches-60 dB.
In order to verify the wide-angle scanning characteristics of the antenna of the present invention, simulation calculation was performed on the active voltage standing wave ratio in the H-plane of the above example using the simulation software ANSYS HFSS, and the result is shown in fig. 8. Simulation results show that the active voltage standing wave ratios of the antenna are lower than 2.5 in the working bandwidth range when the H surface is scanned to 30 degrees, and the application requirements of phased array wide-angle beam scanning can be met.
So far, the silicon-based millimeter wave magnetic electric dipole antenna of the invention has been described in detail with reference to the attached drawings. From the above description, those skilled in the art should clearly recognize the present invention.
In summary, the present invention provides a silicon-based millimeter wave magnetoelectric dipole antenna, which comprises a substrate integrated waveguide feed structure with a short-circuited end, an electric dipole antenna and a magnetic dipole antenna. Because high-resistance silicon is adopted as a dielectric material, the antenna is beneficial to miniaturization, is compatible with the existing CMOS silicon-based process, and is very suitable for being integrated with a millimeter wave microcircuit. The antenna has the advantages of large bandwidth, good symmetry, low cross polarization and the like, and has important engineering application value in wide-angle scanning phased array radars.
The above-mentioned embodiments, objects, technical solutions and advantages of the present invention are further described in detail, it should be understood that the above-mentioned embodiments are only illustrative of the present invention and are not intended to limit the present invention, and any modifications, equivalents, improvements and the like made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (5)
1. A silicon-based millimeter wave magnetoelectric dipole antenna is characterized by comprising 2 rectangular silicon-based media with different metallization patterns plated on the upper and lower surfaces, wherein the lower silicon-based media are integrated with a substrate integrated waveguide feed structure with a short-circuited end, the upper silicon-based media are integrated with a magnetoelectric dipole antenna structure, the two structures are coupled through a gap, the substrate integrated waveguide feed structure with the short-circuited end adopts a substrate integrated waveguide form, the substrate integrated waveguide feed structure structurally and completely consists of metallization through hole arrays inside the silicon-based media with the metallized upper and lower surfaces, the substrate integrated waveguide feed structure and the microstrip circuit realize gapless integration, and the radiation structure on the upper layer comprises an electric dipole antenna and a magnetic dipole antenna.
2. The silicon-based millimeter wave magnetoelectric dipole antenna according to claim 1, wherein the silicon-based medium is high-resistance silicon and has a dielectric constant of 11.9.
3. The silicon-based millimeter wave magnetoelectric dipole antenna according to claim 1 or 2, wherein the electric dipole antenna is formed by plating 4 corner cut rectangular metalized patches which are mirrored in pairs on the upper surface of an upper silicon-based medium, and each corner cut rectangular metalized patch is connected with the upper surface of a lower silicon-based medium, namely the lower surface of the upper silicon-based medium, through 4 metalized through holes.
4. The silicon-based millimeter wave magnetoelectric dipole antenna according to claim 1 or 2, characterized in that the magnetic dipole antenna is an H-shaped slot etched on the upper surface of the lower silicon-based medium and located right below the 4 corner-cut rectangular metallized patches.
5. The silicon-based millimeter wave magnetoelectric dipole antenna according to claim 1 or 2, wherein electromagnetic waves are fed from the lower substrate integrated waveguide and coupled into the upper silicon-based medium through an H-shaped gap on the upper surface of the lower silicon-based medium, and excitation of the upper electric dipole antenna and the magnetic dipole antenna is realized simultaneously.
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| CN202210471653.2A CN114883786A (en) | 2022-04-29 | 2022-04-29 | Silicon-based millimeter wave magnetoelectric dipole antenna |
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| CN202210471653.2A CN114883786A (en) | 2022-04-29 | 2022-04-29 | Silicon-based millimeter wave magnetoelectric dipole antenna |
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN108933327A (en) * | 2018-06-08 | 2018-12-04 | 西安电子科技大学 | A kind of improved broadband microstrip antenna unit |
| CN109768393A (en) * | 2019-02-22 | 2019-05-17 | 重庆邮电大学 | A kind of broadband Terahertz asymmetric transmission device based on Meta Materials |
| CN112751170A (en) * | 2019-10-30 | 2021-05-04 | Lg电子株式会社 | Electronic device with 5G antenna |
| CN112838365A (en) * | 2020-12-29 | 2021-05-25 | 武汉第二船舶设计研究所(中国船舶重工集团公司第七一九研究所) | Circular polarization substrate integrated waveguide magnetoelectric dipole antenna and array thereof |
| WO2021120771A1 (en) * | 2019-12-19 | 2021-06-24 | 华南理工大学 | Millimeter-wave end-fire circularly polarized antenna and wireless communication device |
| CN213816410U (en) * | 2020-12-31 | 2021-07-27 | 中国电子科技集团公司第十四研究所 | Silicon-based millimeter wave gradient slot line antenna |
| CN114284736A (en) * | 2021-12-31 | 2022-04-05 | 厦门大学 | Millimeter-wave wide-band high-gain dual-polarization magnetoelectric dipole filter antenna |
-
2022
- 2022-04-29 CN CN202210471653.2A patent/CN114883786A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108933327A (en) * | 2018-06-08 | 2018-12-04 | 西安电子科技大学 | A kind of improved broadband microstrip antenna unit |
| CN109768393A (en) * | 2019-02-22 | 2019-05-17 | 重庆邮电大学 | A kind of broadband Terahertz asymmetric transmission device based on Meta Materials |
| CN112751170A (en) * | 2019-10-30 | 2021-05-04 | Lg电子株式会社 | Electronic device with 5G antenna |
| WO2021120771A1 (en) * | 2019-12-19 | 2021-06-24 | 华南理工大学 | Millimeter-wave end-fire circularly polarized antenna and wireless communication device |
| CN112838365A (en) * | 2020-12-29 | 2021-05-25 | 武汉第二船舶设计研究所(中国船舶重工集团公司第七一九研究所) | Circular polarization substrate integrated waveguide magnetoelectric dipole antenna and array thereof |
| CN213816410U (en) * | 2020-12-31 | 2021-07-27 | 中国电子科技集团公司第十四研究所 | Silicon-based millimeter wave gradient slot line antenna |
| CN114284736A (en) * | 2021-12-31 | 2022-04-05 | 厦门大学 | Millimeter-wave wide-band high-gain dual-polarization magnetoelectric dipole filter antenna |
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