CN114877816A - Method for measuring thickness and uniformity of scintillator film applied to IPEM system - Google Patents
Method for measuring thickness and uniformity of scintillator film applied to IPEM system Download PDFInfo
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- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
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Abstract
The invention discloses a method for measuring the thickness and uniformity of a scintillator film applied to an IPEM system, which comprises the following steps: before the experiment, the positions of an angular prism and a gold silicon surface barrier detector are aligned by using infrared laser coincident with a beam line; adjusting the ion beam to change from a high fluence rate to a low fluence rate during the experiment; after irradiation, detecting the light spot distribution generated after the ion irradiates the scintillator film through an sCMOS camera, and measuring to obtain the uniformity information of the scintillator thickness; and converting the acquired transient signal into a transient current waveform through the impedance of an oscilloscope, and calculating the electric charge amount and converting energy to obtain the thickness of the scintillator film. On one hand, the thickness and the uniformity of the film are qualitatively analyzed in real time through an sCMOS camera, and on the other hand, the thickness of the scintillator film is quantitatively measured off line by utilizing transient pulses captured by a gold silicon surface barrier detector; and helps to assess the spatial resolution of the IPEM system.
Description
Technical Field
The invention relates to the technical field of measurement of film thickness distribution and uniformity thereof, in particular to a method for measuring the thickness and uniformity of a scintillator film applied to an IPEM system.
Background
ion-Induced Photon Emission Microscopy (IPEM) is a new technique for studying radiation sensitive regions of microelectronic devices. The traditional Radiation Effect Microscope (REM) technology uses the focused micron-sized beam to perform scanning irradiation on different areas of the device, so as to obtain the sensitive area distribution of the radiation effect of the device. The IPEM technique, in turn, uses a large-area, unfocused ion beam to irradiate the device, and indirectly determines the ion incidence position by generating secondary photons through interaction with a scintillator film covering the surface of the device. Compared with a focusing type microbeam, the IPEM system has a relatively simple structure, does not need focusing and scanning, has relatively low technical difficulty and cost, and has certain technical advantages. Currently, many international research institutions, such as national laboratory of sandia, usa, atomic energy agency of japan, etc., establish IPEM devices and perform a series of studies. The IPEM device established at the special end for the single event effect of the HI-13 tandem accelerator is mainly established by Chinese atomic energy science research institute at home.
Researches show that the thickness and uniformity of the scintillator film are key parameters of the IPEM system, and the method has important significance for evaluating performance indexes such as photon detection efficiency, spatial resolution and the like of the IPEM system. The current market is mature in the way of preparing a thin film, which is formed by adhering powdered scintillator particles together through an organic resin adhesive and spraying the powder scintillator particles on a device, but due to the non-uniformity of the scintillator particles, the conversion mode of the gram-weight ratio and the like, the spraying is not uniform, and the thickness of the thin film cannot be accurately given. Therefore, how to accurately evaluate the thickness and uniformity of the scintillator film in the IPEM system becomes a critical issue to be solved urgently.
Disclosure of Invention
The invention mainly aims to provide a method for measuring the thickness and the uniformity of a scintillator film in an IPEM (orthogonal frequency division multiplexing) system, which can solve the problem that the thickness and the uniformity of the scintillator film in the IPEM system are difficult to determine.
In order to achieve the purpose, the invention adopts the technical scheme that:
the embodiment of the invention provides a method for measuring the thickness and uniformity of a scintillator film applied to an IPEM system, which comprises the following steps:
s10, before the experiment, the positions of the rectangular prism and the gold silicon surface barrier detector are aligned by using the infrared laser coincident with the beam line;
s20, adjusting the change of the ion beam from a high fluence rate to a low fluence rate during the experiment;
s30, detecting the light spot distribution generated after the ion irradiates the scintillator film through an sCMOS camera after irradiation, and measuring to obtain the uniformity information of the scintillator thickness;
and S40, converting the acquired transient signal into a transient current waveform through the impedance of an oscilloscope, and calculating the electric charge amount and converting energy to obtain the thickness of the scintillator film.
Further, the S40 includes:
s401, capturing a transient pulse signal by using a gold silicon surface barrier detector, recording the transient pulse signal by using a transient test circuit consisting of a Bias-T and an oscilloscope, and converting the transient pulse signal into a transient current pulse;
s402, integrating the transient current pulse with time through current to obtain a collected charge amount;
s403, obtaining the energy of ions deposited in the gold silicon surface barrier detector through energy conversion;
s404, obtaining the energy lost by the ions in the scintillator film according to the deposited energy, and performing simulation calculation to obtain the thickness of the scintillator film.
Further, the step S401 includes:
capturing transient pulse signals by using a gold silicon surface barrier detector, and recording the transient pulse signals by using a transient test circuit consisting of a Bias-T and an oscilloscope; converting the approximate induced transient current pulse waveform into a transient current pulse according to an analysis model;
the analysis model of the approximate induced transient current pulse waveform is as follows:
(1) in the formula, t d1 Indicates the rising time of the current, t d2 Denotes the falling time of the current, t denotes the sampling time of the current, I peak Representing the peak value, tau, of the current pulse 1 Denotes the current rise time constant, τ 2 Represents a current fall time constant, t is a certain moment in the current waveform; e denotes a natural constant.
Further, the step S402 includes:
by integration over time, the total quantity of charge Q generated by the current pulse Total The following were used:
I peak representing the peak of the current pulse.
Further, the step S403 includes:
and calculating and obtaining the deposition energy incident into the gold silicon surface barrier detector according to the collected electric charge quantity according to the depletion layer width of the gold silicon surface barrier detector and the electric charge quantity collected by the transient current pulse output by the gold silicon surface barrier detector.
Further, the obtaining step of the depletion layer width of the gold silicon surface barrier detector comprises:
according to the characteristics of the N-type Si-based semiconductor detector, a calculation formula of the thickness of the depletion layer of the gold silicon surface barrier detector is constructed as follows:
(3) in which ε represents the dielectric constant of Si, V 0 Indicating applied biasVoltage in units of V, e charge of electrons, N d Donor impurity concentration distributed for the N region;
resistivity ρ in N-type Si n Comprises the following steps:
by using the formula (3) and the formula (4), for the N-type Si material, the following results are obtained:
d n ＝(2ερ n μ n V 0 ) 1/2 (5)
(4) and (5) formula [ mu ] n Represents the mobility of electrons, μ n ＝1350cm 2 V.s, relative dielectric constant ε r 12 according to ε r ＝ε/ε 0 The size of epsilon can be obtained, wherein the dielectric constant epsilon of vacuum 0 ＝8.85×10 -12 F/m, and substituting the known quantity into the formula (5) to obtain the product:
d n ≈0.5(ρ n V 0 ) 1/2 μm (6)
d n represents the thickness of the depletion layer of the gold silicon surface barrier detector, and d n Greater than the range of the ion beam in Si.
Further, the method for obtaining deposition energy incident into the gold silicon surface barrier detector according to the collected charge quantity calculation comprises the following steps:
the average ionization energy ω in Si is 3.62eV, and the preset energy E 0 Electron-hole pairs generated when charged particles are incident on the gold silicon surface barrier detector:
amount of charge collected:
Q＝e*N (8)
substituting the quantity of the electric charge Q collected by the experiment into a formula (8) to obtain N, substituting the N into a formula (7), and calculating to obtain the preset energy E incident into the gold silicon surface barrier detector 0 ，E 0 To deposit energy.
Further, the S404 includes:
and obtaining the energy lost by the ions in the scintillator film according to the difference between the total energy of the ion incidence and the deposition energy in the experiment, and obtaining the thickness of the scintillator film through simulation calculation.
Further, the step of S10 includes:
adjusting the three-dimensional displacement platform to enable laser to be emitted from the right-angle prism with the hole, and moving the sample platform to enable the laser to be aligned to the central position of the gold silicon surface barrier detector;
and continuously adjusting the three-dimensional displacement platform to focus the microscope, so that the sCMOS camera can observe the scintillator film on the surface of the detector, and recording the coordinate position of the displacement platform at the moment.
Compared with the prior art, the invention has the following beneficial effects:
the embodiment of the invention provides a method for measuring the thickness and uniformity of a scintillator film applied to an IPEM system, which comprises the following steps: before the experiment, the positions of an angular prism and a gold silicon surface barrier detector are aligned by using infrared laser coincident with a beam line; adjusting the ion beam to change from a high fluence rate to a low fluence rate during the experiment; after irradiation, detecting the light spot distribution generated after the ion irradiates the scintillator film through an sCMOS camera, and measuring to obtain the uniformity information of the scintillator thickness; and converting the acquired transient signal into a transient current waveform through the impedance of an oscilloscope, and calculating the electric charge amount and converting energy to obtain the thickness of the scintillator film. According to the method, the gold silicon surface barrier detector is innovatively applied to the IPEM system, the key problem of scintillator film thickness calibration in the IPEM system is solved, technical support is provided for analyzing the influence of scintillator film thickness and uniformity on the performance of the IPEM system, and the evaluation of the spatial resolution of the IPEM system is facilitated.
Drawings
FIG. 1 is a schematic diagram of an IPEM transient test system;
FIG. 2 is a flowchart of a method for measuring the thickness and uniformity of a scintillator film in an IPEM system according to an embodiment of the present invention;
fig. 3 is a schematic diagram of a light spot image detected by an sCMOS camera according to an embodiment of the present invention;
FIG. 4a is a waveform diagram of two transient current pulses with the maximum charge amount and the minimum charge amount in the collected SET pulse signal;
fig. 4b is a schematic diagram of the collected charge amount obtained by integrating the SET current pulse corresponding to fig. 4 a.
Detailed Description
In order to make the technical means, the creation characteristics, the achievement purposes and the effects of the invention easy to understand, the invention is further described with the specific embodiments.
In the description of the present invention, it should be noted that the terms "upper", "lower", "inner", "outer", "front", "rear", "both ends", "one end", "the other end", and the like indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience of description and simplicity of description, but do not indicate or imply that the referred device or element must have a specific orientation, be constructed in a specific orientation, and be operated, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first" and "second" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present invention, it is to be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "disposed," "connected," and the like are to be construed broadly, such as "connected," which may be fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in a specific case to those of ordinary skill in the art.
The method for measuring the thickness and the uniformity of the scintillator film of the IPEM system is based on the IPEM system established at the HI-13 serial accelerator end of the Chinese atomic energy research institute, and carries out single-particle transient test on a gold silicon surface barrier Detector (DUT) as shown in figure 1. The IPEM system comprises a transient test system and an optical system, wherein the transient test system mainly comprises a gold silicon surface barrier detector, a Bias-T providing an interface for applying Bias voltage to a DUT and an oscilloscope for performing transient data acquisition, the optical system mainly comprises a scintillator film, a beam-limiting and photon-transmitting right-angle prism with holes, a microscope tube for collecting and transmitting photons and an sCMOS camera for detecting photons, a sample platform and a three-dimensional displacement platform are equipped, and an ion beam irradiates the gold silicon surface barrier detector after passing through the right-angle prism to limit the beam.
As shown in fig. 2, the method for measuring the thickness and uniformity of the scintillator film applied to the IPEM system includes:
s10, before the experiment, the positions of the rectangular prism and the gold silicon surface barrier detector are aligned by using the infrared laser coincident with the beam line;
s20, adjusting the change of the ion beam from a high fluence rate to a low fluence rate during the experiment;
s30, detecting the light spot distribution generated after the ions irradiate the scintillator film through an sCMOS camera after irradiation, and measuring to obtain the uniformity information of the scintillator thickness;
and S40, converting the acquired transient signal into a transient current waveform through the impedance of an oscilloscope, and calculating the electric charge amount and converting energy to obtain the thickness of the scintillator film.
According to the method, the sCMOS camera is used for detecting the light spot distribution generated after ions irradiate the scintillator film, and the uniformity information of the scintillator thickness is obtained through measurement. Meanwhile, in order to quantitatively obtain the accurate thickness of the scintillator film in the IPEM system, a transient test circuit consisting of the Bias-T and an oscilloscope is used for recording transient signals of the gold silicon surface barrier detector. The energy of ions deposited in the gold silicon surface barrier detector can be obtained through energy conversion, so that the energy of ions lost in the scintillator film is obtained, and the thickness of the scintillator film can be obtained through analog calculation. The method comprises the steps of qualitatively analyzing the thickness and uniformity of a film in real time through an sCMOS camera, and quantitatively measuring the thickness of a scintillator film off line by using transient pulses captured by a gold silicon surface barrier detector; and helps to assess the spatial resolution of the IPEM system.
For example, the specific protocol of the irradiation experiment is:
(1) before the experiment, the positions of the rectangular prism and the gold silicon surface barrier detector are aligned by using infrared laser coincident with a beam line. As shown in fig. 1, the three-dimensional displacement platform is adjusted to enable the laser to be emitted from the right-angle prism with the hole, and the sample platform is moved to enable the laser to be aligned with the central position of the gold silicon surface barrier detector. And then, continuously adjusting the three-dimensional displacement platform to focus the microscope, enabling the sCMOS camera to observe the scintillator film on the surface of the gold silicon surface barrier detector, recording the coordinate position of the displacement platform at the moment, and ensuring that the area observed by the camera in the experiment is the area of the beam irradiation device.
(2) In the experiment, the ion beam is first adjusted to a high fluence rate (e.g., 10) 6 ions/cm 2 S) the scintillator luminescence phenomenon can be observed with the sCMOS camera. Then gradually adjusting down the fluence rate, and observing the light-emitting condition of the light spot in real time by using an sCMOS camera, wherein the fluence rate is 10 for example 3 ions/cm 2 S is the spot formed by the distinguishable individual ions. Meanwhile, the period and the amplitude of the instrument can be quickly and automatically set by using automatic setting on the oscilloscope according to the characteristics of the transient pulse signal, the falling edge is selected to trigger in the trigger mode, and the trigger level of-1.4 mV is selected, so that the transient pulse signal can be detected and is higher than the noise signal. When the two signals can be stably detected, data recording can be carried out through a remote control computer.
(3) After irradiation, the problem of thickness uniformity of the scintillator film can be indirectly explained directly through brightness and halo distribution of the collected light spot images. And converting the acquired transient signal into a transient current waveform through the impedance of an oscilloscope, and directly obtaining the thickness of the scintillator film through the modes of charge quantity calculation, energy conversion and the like.
As shown in fig. 3, the light spot image detected by the sCMOS camera is shown, wherein the light spot at point B is brighter than the light spot at point a, which indicates that the deposition energy of the ions is larger at this point, and the thickness of the scintillator film at point B is thicker than that of the scintillator film at point a; and the spot halo range of the point B is larger, which shows that the thickness uniformity of the scintillator film at the point B is worse than that at the point A.
The analytical model used to approximate the induced transient current pulse waveform is a bi-exponential function with a fast rise time and a gradual fall time. The function is represented as follows:
(1) in the formula t d1 Is the rising time of the current, t d2 Is the falling time of the current, I peak Is the peak value of the current pulse, tau 1 Is the current rise time constant, τ 2 Is the current fall time constant, and t is a certain time in the current waveform. By integration over time, the total quantity of charge Q generated by the current pulse Total The following were used:
e in the formulas (1) and (2) is a natural constant;
fig. 4a and 4b show transient current pulses generated by a gold silicon surface barrier detector based on an IPEM system, and 40 transient pulse waveforms are collected in an experiment, wherein fig. 4a shows two transient current pulse waveforms with the maximum charge amount and the minimum charge amount in a collected SET pulse signal, and fig. 4b shows a collected charge amount obtained by integrating the SET current pulse corresponding to fig. 4 a. The transient current pulse collection charge amount obtained by the experiment is between 1112.69fC and 2032.8fC through integral calculation, and the arithmetic average collection charge amount is 1552.78 fC.
According to the characteristics of the N-type Si-based semiconductor detector, the thickness calculation formula of the depletion layer of the gold silicon surface barrier detector is as follows:
(3) in which ε is the dielectric constant of Si, V 0 For an applied bias voltage, the unit is V, e is the charge of an electron, N d A donor impurity concentration distributed for the N region. In the roomAt room temperature, the donor impurities in the Si material are all ionized, and thus in N-type Si, its resistivity ρ n (in Ω · cm) is:
substituting formula (4) into formula (3) can obtain the following for the N-type Si material:
d n ＝(2ερ n μ n V 0 ) 1/2 (5)
in the formula of n Is the mobility of electrons in cm 2 V.s. μ of Si at room temperature n ＝1350cm 2 V.s, relative dielectric constant ε r 12 according to ε r ＝ε/ε 0 The size of epsilon can be obtained, wherein the dielectric constant epsilon of vacuum 0 ＝8.85×10 -12 F/m. Substituting the known quantity into formula (5) to obtain:
d n ≈0.5(ρ n V 0 ) 1/2 μm (6)
resistivity rho of the experiment n Controlling the applied reverse bias voltage to be 50V at 1000 omega cm to obtain the width d of the depletion layer of the detector n Approximately 112 μm. The range of 160MeV Cl ions (which are the ions selected in this experiment: chloride ions, although other ions may be used in the experiment, but is better for zns (ag) scintillator films) in Si is only 46.03 μm, which ensures that the energy of the ions incident on the gold silicon surface barrier detector is totally lost in the depletion layer of the detector. The amount of charge collected by the transient current pulse output by the detector can be used to calculate the energy of the ions incident on the detector.
At room temperature, the average ionization energy ω in Si is 3.62eV, and the energy E is constant 0 Electron-hole pairs generated when charged particles are incident on the gold silicon surface barrier detector:
then the amount of charge collected:
Q＝e*N (8)
according to the experimental collection charge quantity 1112.69 fC-2032.8 fC, the number N of electron-hole pairs generated by ion ionization can be obtained by substituting the experimental collection charge quantity into the formula (8), and then the residual energy of the ions entering the gold silicon surface barrier detector is obtained by calculating the formula (7) to be about 25-46 MeV, because the residual energy of the ions passing through the thin film can be completely collected by the detector without other losses. The energy lost by 160MeV Cl ions in the ZnS (Ag) scintillator film is 114-135 MeV, and the range of Cl ions in ZnS (Ag) in the energy range is calculated to be 23.31-26.99 mu m through simulation of SRIM 2013 software, namely the thickness of the ZnS (Ag) scintillator sprayed on the surface of the gold silicon surface barrier detector. The average thickness was calculated as described above from the average charge amount 1552.78fC collected, and found to be about 25.23 μm.
In this embodiment, equations (3) - (6) mainly calculate the thickness of the depletion layer of the gold silicon surface barrier detector, in order to illustrate that all the electron-hole pairs ionized when 160MeV Cl ions enter the detector can be collected by the detector, the electron-hole pairs generated in the detector can be obtained by calculation according to the charge amount of the collected single-particle transient current pulse and equation (8), the remaining energy when the ions enter the detector can be obtained by calculation according to equation (7), the energy lost by the ions in the zns (ag) scintillator film can be obtained, and the range of the ions in the energy range in the film is simulated according to SRIM 2013 software, so the thickness of the film is obtained.
In the method for measuring the thickness and the uniformity of the scintillator film of the IPEM system, which is provided by the embodiment of the invention, the thickness and the uniformity of the scintillator film of the IPEM can be measured by taking the gold silicon surface barrier detector as a carrier, and the thickness and the uniformity of the scintillator film can be qualitatively measured in real time through a light spot image acquired by an sCMOS camera; the energy of the incident ions in the scintillator film can be calculated through transient pulse signals generated by the gold silicon surface barrier detector, and the energy lost by the ions in the scintillator film is quantitatively analyzed, so that the thickness of the scintillator film is obtained, and the method has important significance for evaluating the spatial resolution of the IPEM system.
The foregoing shows and describes the general principles and broad features of the present invention and advantages thereof. It will be understood by those skilled in the art that the present invention is not limited to the embodiments described above, which are described in the specification and illustrated only to illustrate the principle of the present invention, but that various changes and modifications may be made therein without departing from the spirit and scope of the present invention, which fall within the scope of the invention as claimed. The scope of the invention is defined by the appended claims and equivalents thereof.
Claims (9)
1. A method for measuring the thickness and uniformity of a scintillator film applied to an IPEM system is characterized by comprising the following steps:
s10, before the experiment, the positions of the rectangular prism and the gold silicon surface barrier detector are aligned by using the infrared laser coincident with the beam line;
s20, adjusting the change of the ion beam from a high fluence rate to a low fluence rate during the experiment;
s30, detecting the light spot distribution generated after the ion irradiates the scintillator film through an sCMOS camera after irradiation, and measuring to obtain the uniformity information of the scintillator thickness;
and S40, converting the acquired transient signal into a transient current waveform through the impedance of an oscilloscope, and calculating the electric charge amount and converting energy to obtain the thickness of the scintillator film.
2. The method for measuring the thickness and uniformity of the scintillator film applied to the IPEM system according to claim 1, wherein S40 includes:
s401, capturing a transient pulse signal by using a gold silicon surface barrier detector, recording the transient pulse signal by using a transient test circuit consisting of a Bias-T and an oscilloscope, and converting the transient pulse signal into a transient current pulse;
s402, integrating the transient current pulse with time through current to obtain a collected charge amount;
s403, obtaining the energy of ions deposited in the gold silicon surface barrier detector through energy conversion;
s404, obtaining the energy lost by the ions in the scintillator film according to the deposited energy, and performing simulation calculation to obtain the thickness of the scintillator film.
3. The method for measuring the thickness and the uniformity of the scintillator film in the IPEM system according to claim 2, wherein the step S401 includes:
capturing transient pulse signals by using a gold silicon surface barrier detector, and recording the transient pulse signals by using a transient test circuit consisting of a Bias-T and an oscilloscope; converting the approximate induction transient current pulse waveform into a transient current pulse according to an analysis model of the approximate induction transient current pulse waveform;
the analysis model of the approximate induced transient current pulse waveform is as follows:
(1) in the formula, t d1 Indicates the rising time of the current, t d2 Denotes the falling time of the current, t denotes the sampling time of the current, I peak Representing the peak value, tau, of the current pulse 1 Denotes the current rise time constant, τ 2 Represents a current fall time constant, t is a certain moment in the current waveform; e denotes a natural constant.
4. The method for measuring the thickness and uniformity of the scintillator film applied to the IPEM system according to claim 3, wherein the step S402 includes:
by integration over time, the total quantity of charge Q generated by the current pulse Total The following were used:
I peak representing the peak value of the current pulse.
5. The method for measuring the thickness and the uniformity of the scintillator film applied to the IPEM system according to claim 4, wherein the step S403 includes:
and calculating and obtaining the deposition energy incident into the gold silicon surface barrier detector according to the collected electric charge quantity according to the depletion layer width of the gold silicon surface barrier detector and the electric charge quantity collected by the transient current pulse output by the gold silicon surface barrier detector.
6. The method for measuring the thickness and the uniformity of the scintillator film applied to the IPEM system as claimed in claim 5, wherein the step of obtaining the depletion layer width of the gold silicon surface barrier detector comprises:
according to the characteristics of the N-type Si-based semiconductor detector, a calculation formula of the thickness of the depletion layer of the gold silicon surface barrier detector is constructed as follows:
(3) in which ε represents the dielectric constant of Si, V 0 Representing an applied bias voltage in units of V, e the charge of an electron, N d Donor impurity concentration distributed for the N region;
resistivity ρ in N-type Si n Comprises the following steps:
using formula (3) and formula (4), for N-type Si material:
d n ＝(2ερ n μ n V 0 ) 1/2 (5)
(4) and (5) formula [ mu ] n Represents the mobility of electrons, μ n ＝1350cm 2 V.s, relative dielectric constant ε r 12 according to ε r ＝ε/ε 0 The size of epsilon can be obtained, wherein the dielectric constant epsilon of vacuum 0 ＝8.85×10 -12 F/m, and substituting the known amount into the formula (5) to obtain the following product:
d n ≈0.5(ρ n V 0 ) 1/2 μm (6)
d n represents the thickness of the depletion layer of the gold silicon surface barrier detector, and d n Greater than the range of the ion beam in Si.
7. The method for measuring the thickness and the uniformity of the scintillator film applied to the IPEM system according to claim 6, wherein the step of obtaining the deposition energy incident into the gold silicon surface barrier detector according to the calculation of the collected charge amount comprises:
the average ionization energy ω in Si is 3.62eV, and the preset energy E 0 Electron-hole pairs generated when charged particles are incident on the gold silicon surface barrier detector:
amount of charge collected:
Q＝e*N (8)
substituting the quantity of the electric charge Q collected by the experiment into a formula (8) to obtain N, substituting the N into a formula (7), and calculating to obtain the preset energy E incident into the gold silicon surface barrier detector 0 ，E 0 To deposit energy.
8. The method for measuring the thickness and the uniformity of the scintillator film applied to the IPEM system according to claim 7, wherein the step S404 includes:
and obtaining the energy lost by the ions in the scintillator film according to the difference between the total energy of the ion incidence and the deposition energy in the experiment, and obtaining the thickness of the scintillator film through simulation calculation.
9. The method for measuring the thickness and uniformity of the scintillator film applied to the IPEM system according to claim 1, wherein the step S10 includes:
adjusting the three-dimensional displacement platform to enable laser to be emitted from the right-angle prism with the hole, and moving the sample platform to enable the laser to be aligned to the central position of the gold silicon surface barrier detector;
and continuously adjusting the three-dimensional displacement platform to focus the microscope, enabling the sCMOS camera to observe the scintillator film on the surface of the detector, and recording the coordinate position of the displacement platform at the moment.
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Citations (6)
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|---|---|---|---|---|
| US6160621A (en) * | 1999-09-30 | 2000-12-12 | Lam Research Corporation | Method and apparatus for in-situ monitoring of plasma etch and deposition processes using a pulsed broadband light source |
| US7019311B1 (en) * | 2004-03-25 | 2006-03-28 | Sandia Corporation | Laser-based irradiation apparatus and methods for monitoring the dose-rate response of semiconductor devices |
| US20120119095A1 (en) * | 2009-02-20 | 2012-05-17 | Carlos Alberto Nabais Conde | Multigrid high pressure gaseous proportional scintillation counter for detecting ionizing radiation |
| CN104748691A (en) * | 2015-03-05 | 2015-07-01 | 江苏大学 | Measurement device and method for film thickness |
| CN107703529A (en) * | 2017-08-25 | 2018-02-16 | 中国工程物理研究院材料研究所 | A kind of new beta-ray detection device |
| CN112051248A (en) * | 2020-08-26 | 2020-12-08 | 西北核技术研究所 | Laser excitation-based scintillation material light yield nonlinear measurement method and system |
-
2022
- 2022-05-10 CN CN202210506976.0A patent/CN114877816B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6160621A (en) * | 1999-09-30 | 2000-12-12 | Lam Research Corporation | Method and apparatus for in-situ monitoring of plasma etch and deposition processes using a pulsed broadband light source |
| CN1377457A (en) * | 1999-09-30 | 2002-10-30 | 拉姆研究公司 | Method and apparatus for in-situ monitoring of plasma etch and deposition processes using a pulsed broadband light source |
| US7019311B1 (en) * | 2004-03-25 | 2006-03-28 | Sandia Corporation | Laser-based irradiation apparatus and methods for monitoring the dose-rate response of semiconductor devices |
| US20120119095A1 (en) * | 2009-02-20 | 2012-05-17 | Carlos Alberto Nabais Conde | Multigrid high pressure gaseous proportional scintillation counter for detecting ionizing radiation |
| CN104748691A (en) * | 2015-03-05 | 2015-07-01 | 江苏大学 | Measurement device and method for film thickness |
| CN107703529A (en) * | 2017-08-25 | 2018-02-16 | 中国工程物理研究院材料研究所 | A kind of new beta-ray detection device |
| CN112051248A (en) * | 2020-08-26 | 2020-12-08 | 西北核技术研究所 | Laser excitation-based scintillation material light yield nonlinear measurement method and system |
Non-Patent Citations (1)
| Title |
|---|
| 艾自辉;徐荣昆;郭洪生;: "几种常用闪烁体受~(60)Coγ源辐照前后探测器灵敏度比对", 核电子学与探测技术, no. 03 * |
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