CN114850139B - Photoresist removing method and photoresist removing equipment - Google Patents
Photoresist removing method and photoresist removing equipment Download PDFInfo
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- CN114850139B CN114850139B CN202210498065.8A CN202210498065A CN114850139B CN 114850139 B CN114850139 B CN 114850139B CN 202210498065 A CN202210498065 A CN 202210498065A CN 114850139 B CN114850139 B CN 114850139B
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- 229920002120 photoresistant polymer Polymers 0.000 title claims abstract description 129
- 238000000034 method Methods 0.000 title claims abstract description 48
- 239000012159 carrier gas Substances 0.000 claims abstract description 60
- 239000007789 gas Substances 0.000 claims abstract description 54
- 238000006243 chemical reaction Methods 0.000 claims abstract description 34
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 24
- 239000001301 oxygen Substances 0.000 claims abstract description 24
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 24
- 239000000203 mixture Substances 0.000 claims abstract description 3
- 238000001816 cooling Methods 0.000 claims description 9
- 230000008569 process Effects 0.000 claims description 8
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- 239000011261 inert gas Substances 0.000 claims description 4
- 238000007781 pre-processing Methods 0.000 claims description 4
- 230000004913 activation Effects 0.000 claims description 3
- 229910052786 argon Inorganic materials 0.000 claims description 3
- 230000001351 cycling effect Effects 0.000 claims description 3
- 210000002381 plasma Anatomy 0.000 description 129
- 238000010168 coupling process Methods 0.000 description 7
- 238000005859 coupling reaction Methods 0.000 description 7
- 230000008878 coupling Effects 0.000 description 6
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 5
- 229910001882 dioxygen Inorganic materials 0.000 description 5
- 230000003213 activating effect Effects 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 238000007664 blowing Methods 0.000 description 2
- 239000000498 cooling water Substances 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000005495 cold plasma Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F25—REFRIGERATION OR COOLING; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS; MANUFACTURE OR STORAGE OF ICE; LIQUEFACTION SOLIDIFICATION OF GASES
- F25D—REFRIGERATORS; COLD ROOMS; ICE-BOXES; COOLING OR FREEZING APPARATUS NOT OTHERWISE PROVIDED FOR
- F25D17/00—Arrangements for circulating cooling fluids; Arrangements for circulating gas, e.g. air, within refrigerated spaces
- F25D17/02—Arrangements for circulating cooling fluids; Arrangements for circulating gas, e.g. air, within refrigerated spaces for circulating liquids, e.g. brine
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Plasma & Fusion (AREA)
- General Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
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- Drying Of Semiconductors (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
The embodiment of the invention provides a photoresist stripping method and photoresist stripping equipment, wherein the photoresist stripping method comprises the following steps: step one, introducing oxygen into a plasma generation chamber; step two, introducing a first gas into the plasma generation chamber; step three, ionizing the first gas into first plasma; step four, mixing the first plasma with the carrier gas fed by the carrier gas device and then feeding the mixture into a photoresist stripping reaction chamber; step five, introducing oxygen into the plasma generation chamber; step six, introducing a second gas into the plasma generation chamber; seventh, ionizing the second gas into second plasma; and step eight, mixing the second plasma with the carrier gas fed by the carrier gas device, and then feeding the mixed gas into a photoresist stripping reaction chamber, so that the damage of the plasma to the wafer can be reduced, and the product yield is improved.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a photoresist removing method and photoresist removing equipment.
Background
Plasmas are divided into three categories: high temperature plasma (thermonuclear fusion plasma), thermal plasma (plasma arc, plasma torch, etc.); cold plasma (low pressure ac, RF, microwave plasma, high pressure dielectric barrier discharge, corona discharge, RF discharge).
Compared with direct current glow discharge, alternating current discharge can overcome plasma non-uniformity caused by direct current discharge. The alternating current discharge is distinguished by low frequency and high frequency, the low frequency alternating current plasma discharge can pollute plasma because of the exposed electrode, the high frequency plasma can change the uniformity of treatment, and the continuous, uniform and effective discharge can be maintained no matter whether the dielectric barrier exists or not. Meanwhile, electrons and ions cannot reach the electrode in the half period of discharge, so that the loss of charged particles is greatly reduced;
the high frequency RF discharge can produce a relatively uniform plasma mainly due to the fact that electrons reciprocate in the electric field during the high frequency discharge, molecules collide with the electrons, the electrons transfer energy to the molecules, the molecules become excited, and ionization occurs to form plasma. If the RF power is low, the energy of the plasma is attenuated before reaching the wafer surface, and the reaction treatment effect is greatly reduced. The high RF power ensures that the plasma is fully ionized, which means that the plasma density is high, and excessive bombardment is caused to the wafer due to the high density when the plasma reaches the surface of the wafer, so that the wafer is seriously damaged, the service life of the subsequent wafer is reduced, the product yield is low, and the added value is low.
Disclosure of Invention
The invention aims at providing a photoresist removing method which can reduce the damage of plasma to a wafer and improve the product yield.
The invention further aims to provide a photoresist removing device which can reduce damage to a wafer caused by plasma and improve the product yield.
Embodiments of the invention may be implemented as follows:
the embodiment of the invention provides a photoresist stripping method, which comprises the following steps: the photoresist stripping device at least comprises a plasma generation chamber, a carrier gas device connected with the lower end of the plasma generation chamber and a photoresist stripping reaction chamber connected with the lower end of the carrier gas device, wherein the photoresist stripping method comprises the following steps:
introducing oxygen into the plasma generation chamber to enable the pressure in the plasma generation chamber to be stabilized at a first pressure value;
step two, introducing first gas for preprocessing the surface of the wafer into the plasma generation chamber;
step three, ionizing the first gas into first plasma;
step four, mixing the first plasma with the carrier gas introduced by the carrier gas device, and introducing the mixed gas into a photoresist stripping reaction chamber to perform an activation reaction on the wafer in the photoresist stripping reaction chamber;
introducing oxygen into the plasma generation chamber to enable the pressure in the plasma generation chamber to be stabilized at a second pressure value, wherein the second pressure value is smaller than or equal to the first pressure value;
step six, introducing a second gas for photoresist stripping treatment on the surface of the wafer into the plasma generation chamber;
seventh, ionizing the second gas into second plasma;
and step eight, mixing the second plasma with the carrier gas fed by the carrier gas device, and then feeding the mixture into a photoresist stripping reaction chamber to process photoresist on the surface of a wafer in the photoresist stripping reaction chamber.
Optionally, the third step includes: the first gas is ionized into a first plasma by applying a first radio frequency power to the plasma generation chamber.
The seventh step comprises the following steps: ionizing the second gas into a second plasma by applying a second radio frequency power to the plasma generation chamber; wherein the first radio frequency power is less than the second radio frequency power.
Optionally, the first radio frequency power is 700W, and the second radio frequency power is 900W.
Optionally, in the fourth step, the temperature M of the carrier gas is: m is more than or equal to 25 ℃ and less than 80 ℃, the flow rate of the carrier gas is 20sccm, and the introducing time is 15 seconds;
in the eighth step, the temperature M of the carrier gas is: m is more than or equal to 80 ℃ and less than or equal to 100 ℃, the flow rate of the carrier gas is 50sccm, and the introducing time is 60 seconds;
wherein the carrier gas is an inert gas, and at least comprises argon.
Optionally, the first step includes:
introducing 2000sccm of oxygen into the plasma generation chamber to enable the pressure in the plasma generation chamber to reach a first pressure value within 3 seconds;
the fifth step comprises the following steps:
and introducing 1000sccm of oxygen into the plasma generation chamber to enable the pressure in the plasma generation chamber to reach a second pressure value within 3 seconds.
Optionally, the second step includes:
and (3) introducing H2+N2 with the flow of 800sccm into the plasma generation chamber, wherein the flow of H2 is used for preprocessing the surface of the wafer: n2=10: 100, wherein the pressure in the plasma generation chamber is set to be 1.1T;
the sixth step comprises the following steps:
and (3) introducing H2 with the flow of 200sccm for photoresist removal treatment of the surface of the wafer into the plasma generation chamber: n2, wherein H2: n2=10: 100, the pressure in the plasma generation chamber was set to 1.1T.
Optionally, after the step eight, the method further includes:
and step nine, introducing oxygen with the flow of 2000sccm into the plasma generation chamber to remove residual gas in the photoresist stripping reaction chamber.
Optionally, the photoresist stripping method further includes:
and (3) cycling the steps two to nine until the photoresist on the surface of the wafer is completely removed.
The embodiment of the invention provides a photoresist stripping device which at least comprises an industrial personal computer and a PLC (programmable logic controller) connected with the industrial personal computer, wherein the photoresist stripping device also comprises a plasma generation chamber, a carrier gas device connected with the lower end of the plasma generation chamber and a photoresist stripping reaction chamber connected with the lower end of the carrier gas device, and the industrial personal computer controls the plasma generation chamber, the carrier gas device and the photoresist stripping reaction chamber of the photoresist stripping device through the PLC so as to execute the photoresist stripping method.
Optionally, a cooling pipeline is arranged in the photoresist stripping reaction chamber for cooling the wafer.
The photoresist removing method and the photoresist removing equipment have the beneficial effects that: after the pressure in the plasma generating chamber is stabilized at a first pressure value by introducing oxygen, introducing first gas into the plasma generating chamber, ionizing the first gas into first plasma, mixing the first plasma with carrier gas introduced by a carrier gas device, introducing the mixed gas into a photoresist stripping reaction chamber to remove hard shells on the surface of a wafer in the photoresist stripping reaction chamber, and activating the wafer; and then introducing oxygen into the plasma generation chamber to enable the pressure in the plasma generation chamber to be stabilized at a second pressure value, introducing second gas into the plasma generation chamber and ionizing the second gas into second plasma, mixing the second plasma with carrier gas introduced by the carrier gas device, and introducing the mixed gas into a photoresist stripping reaction chamber to process photoresist on the surface of the wafer. In the process of introducing the first plasma and the second plasma into the photoresist stripping reaction chamber, the first plasma and the second plasma are mixed with carrier gas and then introduced into the photoresist stripping reaction chamber, the carrier gas dilutes the densities of the first plasma and the second plasma, the bombardment of the plasma on the wafer in the photoresist stripping process is reduced to a certain extent, and the damage to the wafer is reduced.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings that are needed in the embodiments will be briefly described below, it being understood that the following drawings only illustrate some embodiments of the present invention and therefore should not be considered as limiting the scope, and other related drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic structural diagram of a photoresist remover according to an embodiment of the present application;
FIG. 2 is a flowchart of steps S100-S900 in the photoresist stripping method according to the embodiment of the present application;
FIG. 3 is a flowchart of sub-step S110 in the photoresist stripping method according to the embodiment of the present application;
FIG. 4 is a flowchart of sub-step S210 in the photoresist stripping method of the embodiment of the present application;
FIG. 5 is a flowchart of sub-step S310 in the photoresist stripping method of the present embodiment;
FIG. 6 is a flowchart of sub-step S510 in the photoresist stripping method of the present embodiment;
FIG. 7 is a flowchart of sub-step S610 in the photoresist stripping method of the present embodiment;
fig. 8 is a flowchart of sub-step S710 in the photoresist stripping method according to the embodiment of the present application.
Icon: 100-photoresist removing equipment; 200-a plasma generation chamber; 210-coupling coils; 300-photoresist stripping reaction chamber; 400-carrier gas device; 500-wafer; 600-cooling pipeline.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present invention more apparent, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is apparent that the described embodiments are some embodiments of the present invention, but not all embodiments of the present invention. The components of the embodiments of the present invention generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations.
Thus, the following detailed description of the embodiments of the invention, as presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
It should be noted that: like reference numerals and letters denote like items in the following figures, and thus once an item is defined in one figure, no further definition or explanation thereof is necessary in the following figures.
In the description of the present invention, it should be noted that, if the terms "upper", "lower", "inner", "outer", and the like indicate an azimuth or a positional relationship based on the azimuth or the positional relationship shown in the drawings, or the azimuth or the positional relationship in which the inventive product is conventionally put in use, it is merely for convenience of describing the present invention and simplifying the description, and it is not indicated or implied that the apparatus or element referred to must have a specific azimuth, be configured and operated in a specific azimuth, and thus it should not be construed as limiting the present invention.
Furthermore, the terms "first," "second," and the like, if any, are used merely for distinguishing between descriptions and not for indicating or implying a relative importance.
It should be noted that the features of the embodiments of the present invention may be combined with each other without conflict.
The inventor of the application finds that the plasma density generated in the original photoresist removing method is larger, excessive bombardment is caused to the wafer 500 when the plasma density reaches the surface of the wafer 500 due to the overlarge density, so that the wafer 500 is seriously damaged, the service life of the subsequent wafer 500 is reduced, the product yield is low, and the added value is low; the embodiment of the application provides a photoresist stripping method and photoresist stripping equipment 100, which are used for solving the technical problems.
Referring to fig. 1, the photoresist stripping apparatus 100 provided in this embodiment at least includes an industrial personal computer, a PLC connected to the industrial personal computer, a plasma generating chamber 200, a carrier gas device 400 connected to the lower end of the plasma generating chamber 200, and a photoresist stripping chamber 300 connected to the lower end of the carrier gas device 400.
It should be noted that the plasma generating chamber 200, the carrier gas device 400 and the photoresist stripping chamber 300 are sequentially connected from top to bottom, and the plasma generating chamber 200 and the photoresist stripping chamber 300 are communicated; the wafer 500 to be photoresist removed is disposed in the photoresist removing chamber 300. The plasma generation chamber 200 is wound with a coupling coil 210 for ionizing a gas to form plasma, and the PLC is electrically connected to the coupling coil 210 and the carrier gas device 400, respectively.
The lower end of the photoresist stripping chamber 300 is also provided with an air extraction pipeline which is connected with an air pump to extract the air in the photoresist stripping chamber 300, a butterfly valve is arranged on the air extraction pipeline, the pressure of the plasma generating chamber 200 or the photoresist stripping chamber 300 is controlled by controlling the opening angle of the butterfly valve, and the butterfly valve is electrically connected with the PLC.
In addition, a cooling line 600 is disposed in the reaction chamber to cool the wafer 500.
In one embodiment, the cooling pipeline 600 is disposed in the photoresist stripping chamber 300, and the cooling pipeline 600 is filled with circulating cooling water to continuously cool the wafer 500, so as to reduce the temperature rise and protect the wafer 500 during the process of continuously performing impact temperature rise on the wafer 500 by plasma.
Alternatively, the temperature of the cooling water in the cooling line 600 may be set to 25-40 ℃, with 25 ℃ being selected in this embodiment.
Referring to fig. 2, the photoresist stripping method provided in the present embodiment is applied to a photoresist stripping apparatus 100, and includes:
in step S100, oxygen is introduced into the plasma generation chamber 200 to stabilize the pressure in the plasma generation chamber 200 at the first pressure value.
Oxygen is introduced into the plasma generation chamber 200, and the pressure in the plasma generation chamber 200 is stabilized at a first pressure value, so that the plasma generation chamber 200 has a pressure stabilizing effect.
Referring to fig. 3, step S100 includes:
substep S110, introducing 2000 seem of oxygen gas into the plasma generation chamber 200, so that the pressure in the plasma generation chamber 200 reaches the first pressure value within 3 seconds.
Alternatively, the first pressure value is 2T. Limiting the volumetric flow rate of the oxygen gas to 2000sccm enables the oxygen gas to flood the entire plasma generation chamber 200 within 3 seconds, and the pressure within the plasma generation chamber 200 quickly reaches the first pressure value.
In step S200, a first gas for pretreating the surface of the wafer 500 is introduced into the plasma generation chamber 200.
Since the hard shell (hydrocarbon) exists on the surface of the wafer 500, the hard shell on the surface of the wafer 500 is first removed before the wafer 500 is stripped.
Further, referring to fig. 4, step S200 includes:
in the substep S210, h2+n2 with a flow rate of 800sccm for pretreating the surface of the wafer 500 is introduced into the plasma generating chamber 200, wherein H2: n2=10: 100, the pressure in the plasma generation chamber 200 was set to 1.1T.
In this step, the first gas is 800sccm of H2+N2, and H2: n2=10: 100.
step S300, ionizing the first gas into a first plasma.
After the first gas is introduced into the plasma generation chamber 200, the coupling coil 210 is energized to ionize the first gas into the first plasma.
Further, referring to fig. 5, step S300 includes:
substep S310 ionizes the first gas into a first plasma by applying a first rf power to the plasma generation chamber 200.
Optionally, the first radio frequency power is 700W. The first gas is ionized into a first plasma by applying 700W of radio frequency power to the plasma generation chamber 200 through the coupling coil 210.
Step S400, the first plasma is mixed with the carrier gas introduced from the carrier gas device 400 and then introduced into the photoresist stripping chamber 300, so as to perform an activation reaction on the wafer 500 in the photoresist stripping chamber 300.
In this step, the temperature M of the carrier gas is: m <80 ℃ is more than or equal to 25 ℃, for example, the temperature of the carrier gas is set to 50 ℃, the flow rate of the carrier gas is 20sccm, and the charging time is 15 seconds.
The ionized first plasma is mixed with a carrier gas and then introduced into the photoresist stripping chamber 300, and the mixed gas can remove crust from the surface of the wafer 500 to activate the wafer 500.
In step S500, oxygen is introduced into the plasma generating chamber 200 to stabilize the pressure in the plasma generating chamber 200 at a second pressure value, wherein the second pressure value is less than or equal to the first pressure value.
Alternatively, the second pressure value is 1.1T. After the wafer 500 is activated, oxygen is again introduced into the plasma generation chamber 200 to stabilize the pressure in the plasma generation chamber 200 at the second pressure value.
Further, referring to fig. 6, step S500 includes:
substep S510, introducing 1000 seem of oxygen into the plasma generation chamber 200 to make the pressure in the plasma generation chamber 200 reach the second pressure value within 3 seconds.
Limiting the volumetric flow rate of the oxygen gas to 1000sccm enables the oxygen gas to flood the entire plasma generation chamber 200 within 3 seconds, and the pressure within the plasma generation chamber 200 rapidly reaches the second pressure value.
In step S600, a second gas for photoresist stripping treatment is introduced into the plasma generating chamber 200.
After removing the crust on the surface of the wafer 500, a second gas is introduced to remove the photoresist on the surface of the wafer 500.
Further, referring to fig. 7, step S600 includes:
in the substep S610, H2 with a flow rate of 200 seem for photoresist stripping treatment of the surface of the wafer 500 is introduced into the plasma generation chamber 200: n2, wherein H2: n2=10: 100, the pressure in the plasma generation chamber 200 was set to 1.1T.
In this step, the second gas is h2+n2 of 200 seem, and H2: n2=10: 100.
step S700, ionizing the second gas into a second plasma.
After the second gas is introduced into the plasma generation chamber 200, the coupling coil 210 is energized to ionize the second gas into the second plasma.
Further, referring to fig. 8, step S700 includes:
a substep S710 of ionizing the second gas into a second plasma by applying a second rf power to the plasma generation chamber 200; wherein the first radio frequency power is less than the second radio frequency power.
Optionally, the second radio frequency power is 900W. The second gas is ionized into a second plasma by applying 900W of radio frequency power to the plasma generation chamber 200 through the coupling coil 210.
Step S800, the second plasma is mixed with the carrier gas introduced from the carrier gas device 400 and then introduced into the photoresist stripping chamber 300, so as to process the photoresist on the surface of the wafer 500 in the photoresist stripping chamber 300.
In this step, the temperature M of the carrier gas is: m is more than or equal to 80 ℃ and less than or equal to 100 ℃, the temperature of the carrier gas is set to 100 ℃, the flow rate of the carrier gas is 50sccm, and the charging time is 60 seconds.
The carrier gas is inert gas and at least comprises argon.
The ionized second plasma is mixed with the carrier gas and then introduced into the photoresist removing reaction chamber 300, and the mixed gas can remove photoresist on the surface of the wafer 500 to complete photoresist removal.
After step S800, the photoresist stripping method further includes:
in step S900, oxygen with a flow rate of 2000sccm is introduced into the plasma generation chamber 200 to remove residual gases in the photoresist stripping chamber 300.
In this step, the pressure is set to 2T, and oxygen is introduced to perform chamber blowing, so as to remove the residual gas in the photoresist stripping chamber 300.
In addition, the photoresist stripping method further comprises the following steps:
and (2) cycling the steps from S200 to S900 until the photoresist on the surface of the wafer 500 is completely removed.
According to the photoresist removing method provided by the embodiment, the working principle of the photoresist removing method is as follows: firstly, oxygen is introduced into the plasma generation chamber 200 within 3 seconds, the flow is set to 2000sccm, and the pressure is set to 2T, so as to stabilize the pressure of the whole chamber; then introducing a first gas with the flow rate of 800sccm in total, setting the pressure to be 1.1T, ionizing the first gas to form first plasma, and then introducing a carrier gas with the flow rate of 20sccm after heating so as to remove a hard shell on the surface of the wafer 500, thereby activating the wafer 500; then oxygen is introduced again to stabilize the pressure in the plasma generation chamber 200 at 1.1T, then a second gas with the total flow of 200sccm is continuously introduced, the second gas is ionized to form a second plasma, then a carrier gas with the flow of 20sccm is introduced after heating, and the second plasma enters the photoresist stripping reaction chamber 300 and then the surface of the wafer 500 is subjected to photoresist stripping treatment; the carrier gas dilutes the first plasma or the second plasma to lighten the bombardment of the first plasma or the second plasma on the surface of the wafer 500 and lighten the damage degree of the wafer 500; after the photoresist is removed, introducing oxygen with the flow of 2000sccm, setting the pressure to be 2T, and blowing the whole chamber until the residual photoresist volatile polymer in the chamber is discharged out of the chamber. The above steps may be repeated to achieve complete photoresist removal and to obtain a low damage wafer 500.
In summary, the embodiment of the present invention provides a photoresist stripping method and a photoresist stripping apparatus 100, in which a certain amount of inert gas is introduced to dilute the plasma during the process of generating the plasma, so that the plasma entering into the photoresist stripping reaction chamber 300 is not easy to cause a larger impact on the wafer 500, and the damage of the wafer 500 is reduced. In this embodiment, the industrial personal computer may control the plasma generating chamber, the carrier gas device, and the photoresist stripping reaction chamber of the photoresist stripping apparatus through the PLC to perform the photoresist stripping method in the above embodiment. The industrial personal computer may be a computing device such as an industrial control computer, which may store a control software program for executing the photoresist stripping method of the present embodiment, through which the industrial personal computer may generate a control PLC control instruction, and the photoresist stripping device is controlled by the PLC to execute the photoresist stripping method of the present embodiment.
The foregoing is merely illustrative of the present invention, and the present invention is not limited thereto, and any changes or substitutions easily contemplated by those skilled in the art within the scope of the present invention should be included in the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.
Claims (10)
1. A photoresist stripping method applied to photoresist stripping equipment, characterized in that the photoresist stripping equipment at least comprises a plasma generating chamber, a carrier gas device connected with the lower end of the plasma generating chamber and a photoresist stripping reaction chamber connected with the lower end of the carrier gas device, the photoresist stripping method comprises the following steps:
introducing oxygen into the plasma generation chamber to enable the pressure in the plasma generation chamber to be stabilized at a first pressure value;
step two, introducing first gas for preprocessing the surface of the wafer into the plasma generation chamber;
step three, ionizing the first gas into first plasma;
step four, mixing the first plasma with the carrier gas introduced by the carrier gas device, and introducing the mixed gas into a photoresist stripping reaction chamber to perform an activation reaction on the wafer in the photoresist stripping reaction chamber;
introducing oxygen into the plasma generation chamber to enable the pressure in the plasma generation chamber to be stabilized at a second pressure value, wherein the second pressure value is smaller than or equal to the first pressure value;
step six, introducing a second gas for photoresist stripping treatment on the surface of the wafer into the plasma generation chamber;
seventh, ionizing the second gas into second plasma;
step eight, mixing the second plasma with the carrier gas fed by the carrier gas device, and then feeding the mixture into a photoresist stripping reaction chamber to process photoresist on the surface of a wafer in the photoresist stripping reaction chamber;
wherein the first gas and the second gas are both mixed gases of H2 and N2.
2. The photoresist stripping method according to claim 1, wherein the third step comprises: ionizing the first gas into a first plasma by applying a first radio frequency power to the plasma generation chamber;
the seventh step comprises the following steps: ionizing the second gas into a second plasma by applying a second radio frequency power to the plasma generation chamber; wherein the first radio frequency power is less than the second radio frequency power.
3. The photoresist stripping method according to claim 2, wherein the first rf power is 700W and the second rf power is 900W.
4. The photoresist stripping method according to claim 1, wherein in the fourth step, the temperature M of the carrier gas is: m is more than or equal to 25 ℃ and less than 80 ℃, the flow rate of the carrier gas is 20sccm, and the introducing time is 15 seconds;
in the eighth step, the temperature M of the carrier gas is: m is more than or equal to 80 ℃ and less than or equal to 100 ℃, the flow rate of the carrier gas is 50sccm, and the introducing time is 60 seconds;
wherein the carrier gas is an inert gas, and at least comprises argon.
5. The photoresist stripping method according to claim 1, wherein the first step comprises:
introducing 2000sccm of oxygen into the plasma generation chamber to enable the pressure in the plasma generation chamber to reach a first pressure value within 3 seconds;
the fifth step comprises the following steps:
and introducing 1000sccm of oxygen into the plasma generation chamber to enable the pressure in the plasma generation chamber to reach a second pressure value within 3 seconds.
6. The photoresist stripping method according to claim 1, wherein the second step comprises:
and (3) introducing H2+N2 with the flow of 800sccm into the plasma generation chamber, wherein the flow of H2 is used for preprocessing the surface of the wafer: n2=10: 100, wherein the pressure in the plasma generation chamber is set to be 1.1T;
the sixth step comprises the following steps:
and (3) introducing H2+N2 with the flow of 200sccm into the plasma generation chamber, wherein the flow is H2: n2=10: 100, the pressure in the plasma generation chamber was set to 1.1T.
7. The photoresist stripping method according to claim 1, further comprising, after the eighth step:
and step nine, introducing oxygen with the flow of 2000sccm into the plasma generation chamber to remove residual gas in the photoresist stripping reaction chamber.
8. The photoresist stripping method according to claim 7, further comprising:
and (3) cycling the steps two to nine until the photoresist on the surface of the wafer is completely removed.
9. The photoresist stripping equipment is characterized by at least comprising an industrial personal computer and a PLC (programmable logic controller) connected with the industrial personal computer, wherein the photoresist stripping equipment further comprises a plasma generation chamber, a carrier gas device connected with the lower end of the plasma generation chamber and a photoresist stripping reaction chamber connected with the lower end of the carrier gas device, and the industrial personal computer controls the plasma generation chamber, the carrier gas device and the photoresist stripping reaction chamber of the photoresist stripping equipment through the PLC so as to execute the photoresist stripping method of any one of claims 1 to 8.
10. The photoresist stripper apparatus of claim 9, wherein a cooling line is provided in the photoresist stripping chamber for cooling the wafer.
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| CN100561664C (en) * | 2007-05-10 | 2009-11-18 | 中芯国际集成电路制造(上海)有限公司 | The removal method of residual polyalcohol after etching and the formation method of etching structure |
| CN102314099B (en) * | 2010-07-08 | 2013-07-31 | 中芯国际集成电路制造(上海)有限公司 | Method for removing photoresist layer on wafer |
| CN103092009B (en) * | 2011-11-08 | 2015-05-20 | 无锡华润华晶微电子有限公司 | Removing method of photoresist used as masking layer of plasma injection |
| US20150001728A1 (en) * | 2013-06-26 | 2015-01-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | Pre-treatment method for metal-oxide reduction and device formed |
| CN104391434A (en) * | 2014-09-24 | 2015-03-04 | 上海华力微电子有限公司 | Photoresist removing method |
| US20180358206A1 (en) * | 2017-06-09 | 2018-12-13 | Mattson Technology, Inc. | Plasma Processing Apparatus |
| CN111722479B (en) * | 2020-06-23 | 2023-09-08 | 北京北方华创微电子装备有限公司 | Photoresist stripping method |
| CN112921403A (en) * | 2021-02-09 | 2021-06-08 | 北京北方华创微电子装备有限公司 | Etching method of silicon carbide wafer |
| CN113805442A (en) * | 2021-09-14 | 2021-12-17 | 苏州长瑞光电有限公司 | Method for removing photoresist |
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