CN114823938A - Photoelectric detection device and method - Google Patents
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- 238000001514 detection method Methods 0.000 title claims abstract description 105
- 238000000034 method Methods 0.000 title claims abstract description 22
- 239000010410 layer Substances 0.000 claims description 57
- 239000000758 substrate Substances 0.000 claims description 46
- 239000002346 layers by function Substances 0.000 claims description 9
- 238000005538 encapsulation Methods 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 3
- 239000011368 organic material Substances 0.000 claims description 3
- 230000000875 corresponding effect Effects 0.000 description 8
- 230000004888 barrier function Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
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- 230000005540 biological transmission Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000008280 blood Substances 0.000 description 1
- 210000004369 blood Anatomy 0.000 description 1
- 239000012503 blood component Substances 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
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Abstract
The invention discloses a photoelectric detection device and a method, the photoelectric detection device comprises a plurality of photoelectric detection elements which are arranged at intervals, the plurality of photoelectric detection elements comprise a plurality of first photoelectric detection elements and at least one second photoelectric detection element, the first photoelectric detection elements and the second photoelectric detection elements have the same structure, and a light shielding part is arranged on the second photoelectric detection element, the first photoelectric detection element generates light current after receiving the ambient light, the second photoelectric detection element can not receive the ambient light under the shielding of the light shielding part to generate dark current, and the control unit can use the dark current to calibrate the photocurrent to obtain a photosensitive signal so as to improve the accuracy of the finally output photosensitive signal because the first photoelectric detection element and the second photoelectric detection element have the same structure.
Description
Technical Field
The application relates to the technical field of display, in particular to a photoelectric detection device and a method.
Background
In modern society of technological advancement, the application of photodetectors is extremely wide, including: the method is applied to the fields of image sensing, environment monitoring, industrial control, ray detection, biological detection and the like.
At present, common photoelectric detection elements comprise a silicon-based photoelectric detection element, a metal oxide photoelectric detection element, an organic photoelectric detection element and the like, and the photoelectric detection elements are sensitive to temperature, so that the optical response performance of the photoelectric detection elements is influenced, and the accuracy of finally output photosensitive signals is low.
Disclosure of Invention
The invention provides a method and a device, which can solve the problem that the accuracy of an output photosensitive signal is low due to the influence of temperature of a photoelectric detection device.
To solve the above problem, in a first aspect, the present invention provides a photodetecting device, including:
a drive substrate;
the photoelectric detection layer is arranged on the driving substrate and comprises a plurality of photoelectric detection elements which are arranged at intervals and electrically connected with the photoelectric detection layer, the plurality of photoelectric detection elements comprise a plurality of first photoelectric detection elements and at least one second photoelectric detection element, and the first photoelectric detection elements and the second photoelectric detection elements have the same structure;
the light shielding layer is arranged on one side, away from the driving substrate, of the photoelectric detection layer and correspondingly arranged on the second photoelectric detection element, and the orthographic projection of the light shielding layer on the driving substrate covers the orthographic projection of the second photoelectric detection element on the driving substrate;
the control unit is electrically connected with the plurality of first photoelectric detection elements and the at least one second photoelectric detection element respectively;
the first photoelectric detection element generates a photocurrent under the irradiation of light, the second photoelectric detection element generates a dark current under the shielding of the light shielding layer, and the control unit acquires the photocurrent and the dark current, obtains a photosensitive signal according to the photocurrent and the dark current, and outputs the photosensitive signal.
In an embodiment of the present invention, the control unit is further configured to obtain an ambient temperature according to the dark current and output the ambient temperature.
In an embodiment of the invention, the light shielding layer includes at least one light shielding portion correspondingly disposed on at least one of the second photodetecting elements, and an orthogonal projection of one of the light shielding portions on the substrate covers an orthogonal projection of the corresponding second photodetecting element on the substrate.
In an embodiment of the invention, the light shielding portion is disposed on a surface of the corresponding second photodetecting element away from the substrate, and a material of the light shielding portion is a metal.
In an embodiment of the present invention, the photodetection element includes a first electrode, a photodetection functional layer disposed on the first electrode, and a second electrode disposed on the photodetection functional layer, and the light shielding portion is disposed on the second electrode of the corresponding second photodetection element and is made of the same material as the second electrode.
In an embodiment of the present invention, the photo-detection device further includes an encapsulation layer disposed on a side of the photo-detection layer away from the driving substrate, the light-shielding portion is disposed on the encapsulation layer, and the light-shielding portion is made of a black organic material.
In an embodiment of the present invention, the photoelectric detection apparatus further includes a color film layer disposed on a side of the photoelectric detection layer away from the driving substrate and correspondingly disposed on the plurality of first photoelectric detection elements, where the color film layer includes a plurality of color film units, one of the color film units is correspondingly disposed on one of the first photoelectric detection elements, and an orthogonal projection of one of the color film units on the substrate covers an orthogonal projection of the corresponding first photoelectric detection element on the substrate.
In a second aspect, the present invention provides a photodetection method, which uses the above-mentioned photodetection device, and the photodetection method includes the following steps:
the driving substrate inputs driving signals to the first photoelectric detection element and the second photoelectric detection element;
the first photoelectric detection element generates photocurrent under the irradiation of light;
the second photoelectric detection element generates dark current under the shielding of the light shielding layer;
the control unit acquires the photocurrent and the dark current, and obtains a photosensitive signal according to the photocurrent and the dark current and outputs the photosensitive signal.
In a photodetection method provided in an embodiment of the present invention, the step of obtaining a photosensitive signal according to the photocurrent and the dark current includes:
calculating to obtain a corrected photocurrent according to the photocurrent and the dark current by combining the following formula;
correcting photocurrent to photocurrent + dark current
And obtaining the photosensitive signal according to the corrected photocurrent.
In the photodetection method provided in the embodiment of the present invention, the control unit further obtains an ambient temperature according to the dark current and outputs the ambient temperature.
Has the advantages that: the invention provides a photoelectric detection device and a method, the photoelectric detection device comprises a plurality of photoelectric detection elements which are arranged at intervals, the plurality of photoelectric detection elements comprise a plurality of first photoelectric detection elements and at least one second photoelectric detection element, the first photoelectric detection elements and the second photoelectric detection elements have the same structure, and a light shielding part is arranged on the second photoelectric detection element, the first photoelectric detection element generates light current after receiving the ambient light, the second photoelectric detection element can not receive the ambient light under the shielding of the light shielding part to generate dark current, and the control unit can use the dark current to calibrate the photocurrent to obtain a photosensitive signal so as to improve the accuracy of the finally output photosensitive signal because the first photoelectric detection element and the second photoelectric detection element have the same structure.
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In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
Fig. 1 is a schematic cross-sectional structure diagram of a first photodetecting device according to an embodiment of the present invention;
fig. 2 is a schematic diagram illustrating a detection principle of a photodetection device according to an embodiment of the present invention;
FIG. 3 is a schematic cross-sectional view of a second photo-detection device according to an embodiment of the present invention;
FIG. 4 is a schematic cross-sectional view of a third photo-detection device according to an embodiment of the present invention;
FIG. 5 is a schematic cross-sectional view of a fourth photo-detection device according to an embodiment of the present invention;
fig. 6 is a schematic cross-sectional structure diagram of a fifth photodetecting device according to an embodiment of the present invention;
fig. 7 is a schematic flow chart of a photodetection method according to an embodiment of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the description of the present invention, it is to be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc. indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience of description and simplicity of description, but do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be considered as limiting the present invention. Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, features defined as "first", "second", may explicitly or implicitly include one or more of the described features. In the description of the present invention, "a plurality" means two or more unless specifically defined otherwise.
In this application, the word "exemplary" is used to mean "serving as an example, instance, or illustration. Any embodiment described herein as "exemplary" is not necessarily to be construed as preferred or advantageous over other embodiments. The following description is presented to enable any person skilled in the art to make and use the invention. In the following description, details are set forth for the purpose of explanation. It will be apparent to one of ordinary skill in the art that the present invention may be practiced without these specific details. In other instances, well-known structures and processes are not shown in detail to avoid obscuring the description of the invention with unnecessary detail. Thus, the present invention is not intended to be limited to the embodiments shown, but is to be accorded the widest scope consistent with the principles and features disclosed herein.
An embodiment of the present invention provides a photodetection device, which is described in detail below with reference to fig. 1 and fig. 2:
the photoelectric detection device comprises a driving substrate 100, a photoelectric detection layer 200, a shading layer 300 and a control unit; the photodetection layer 200 is disposed on the driving substrate 100 and electrically connected to the driving substrate 100, and includes a plurality of photodetection elements 210 disposed at intervals, the plurality of photodetection elements 210 includes a plurality of first photodetection elements 211 and at least one second photodetection element 212, the first photodetection elements 211 and the second photodetection elements 212 have the same structure, are identical photodetection elements, and are divided into the first photodetection elements 211 and the second photodetection elements 212 because the working principle and the function of the two are different, which will be described in detail later; the light shielding layer 300 is disposed on a side of the photodetection layer 200 away from the driving substrate 100 and is correspondingly disposed on the second photodetection element 212, and an orthographic projection of the light shielding layer 300 on the driving substrate 100 covers an orthographic projection of all the second photodetection elements 212 on the driving substrate 100; the control unit is electrically connected to the plurality of first photo-detection elements 211 and the at least one second photo-detection element 212 respectively;
with reference to fig. 2, the first photo-detection element 211 generates a photo-current under the irradiation of light, the second photo-detection element 212 generates a dark current under the shielding of the light shielding layer, and the control unit obtains the photo-current and the dark current, obtains a photosensitive signal according to the photo-current and the dark current, and outputs the photosensitive signal.
In the photodetection device provided in the embodiment of the present invention, at least one of the plurality of photodetection elements 210 is shielded by using a light shielding layer as a second photodetection element 212 for generating a dark current, and since the first photodetection element 211 and the second photodetection element 212 have the same structure, the control unit can obtain a photosensitive signal after the dark current is used for calibrating the photocurrent, so as to improve the accuracy of the finally output photosensitive signal, and the specific principle is explained as follows:
the photoelectric detection element is a reverse biased diode sensitive to light, when the photoelectric detection element is illuminated by light, the saturated reverse leakage current is increased to form a photocurrent, and the magnitude of the photocurrent is changed along with the change of the incident light intensity; when no light is irradiated, a small saturated reverse leakage current, namely dark current, exists, and the dark current is related to temperature;
therefore, the first photoelectric detection element generates photocurrent, the second photoelectric detection element generates dark current, the actual photo-generated current is equal to the photocurrent minus the dark current, the dark current is small and can be ignored under normal conditions, but the dark current is large and cannot be ignored when the temperature is high, and the dark current is acquired through the second photoelectric detection element at the moment and is used for calibrating the photocurrent to obtain accurate actual photo-generated current, so that the accuracy of the obtained photosensitive signal is improved.
Further, in some embodiments, since the magnitude of the dark current is strongly correlated with the temperature, for a photodetection element, there is a specific relative relationship between the magnitude of the dark current and the temperature, and the control unit can calculate the ambient temperature and output the ambient temperature by combining the obtained dark current with the relative relationship, that is, the photodetection device can be used for detecting the ambient temperature in addition to the basic function of outputting the photosensitive signal, and can be applied to more diversified application scenarios.
It should be added that the photodetection element 210 generally includes a first electrode 210a, a photodetection functional layer 210b disposed on the first electrode 210a, and a second electrode 210c disposed on the photodetection functional layer 210b, wherein a plurality of the photodetection elements 210 are correspondingly disposed in a plurality of grooves formed in the element defining layer 400;
the first electrodes 210a of the plurality of photodetecting elements 210 are arranged at intervals, that is, include a plurality of first electrodes 210 a;
the second electrodes 210c of a plurality of the photodetecting elements 210 are connected to each other, that is, include one second electrode 210 c;
the photodetection functional layer 210b generally includes a first transmission layer, a first barrier layer, an active layer, a second barrier layer, and a second transmission layer, which are stacked, and of course, according to the actual process requirements, the photodetection functional layer 210b may include several of the foregoing film layers, or may include other required film layers besides the foregoing film layers, which is not limited specifically;
the driving substrate 100 provides the same first voltage signal to the plurality of first electrodes 210a and provides the second voltage signal to the second electrodes 210c, respectively, so as to drive the plurality of photodetecting elements 210 to operate to generate a photocurrent or a dark current;
the control unit is electrically connected to the first electrodes 210a of the photodetection elements 210 through a plurality of wires, respectively, for obtaining photocurrent or dark current.
In some embodiments, the light shielding layer 300 includes at least one light shielding portion correspondingly disposed on at least one of the second photodetecting elements 212, and an orthographic projection of one of the light shielding portions on the driving substrate 100 covers an orthographic projection of the corresponding second photodetecting element 212 on the substrate, and specifically, an orthographic projection of the light shielding portion on the driving substrate 100 covers an orthographic projection of the photodetecting functional layer 210b in the corresponding second photodetecting element 212 on the substrate.
Those skilled in the art can reasonably arrange the light shielding portion according to actual requirements to shield the second photodetecting element, and several arrangement manners of the light shielding portion are exemplarily shown as follows:
in some embodiments, referring to fig. 1, the light-shielding portion is a first light-shielding portion 310, the first light-shielding portion 310 is disposed on a surface of the second photodetection element 212, which is far from the driving substrate 100, and the first light-shielding portion 310 is made of metal, that is, the first light-shielding portion 310 directly covers an upper surface of the second photodetection element 212 for shielding light from entering the second photodetection element 212.
Further, since the first light-shielding portion 310 directly covers the upper surface of the second photodetecting element 212, that is, the first light-shielding portion 310 is in contact with the second electrode 210c, the materials of the first light-shielding portion 310 and the second electrode 210c can be set to be the same material, and thus, in an actual manufacturing process, the first light-shielding portion 310 and the second electrode 210c can be formed by one process, thereby reducing the manufacturing cost and improving the manufacturing efficiency.
In some embodiments, referring to fig. 3, the light-shielding portion is a second light-shielding portion 320, the photodetection device further includes an encapsulation layer 500 disposed on a side of the photodetection layer 200 away from the driving substrate 100, the second light-shielding portion 320 is disposed on the encapsulation layer, and the second light-shielding portion 320 is made of a black organic material, that is, the second light-shielding portion 320 is a black matrix unit, the black matrix unit is simple in preparation method, low in cost, and suitable for large-scale industrial production.
In some embodiments, please refer to fig. 4, the shading parts are a combination of the first shading parts 310 and the second shading parts 320 in the previous embodiments;
in general, the orthographic projection of the second light shielding portion 320 on the driving substrate 100 covers the orthographic projection of the first light shielding portion 310 on the driving substrate 100, the second light shielding portion 320 serves as a first light shielding barrier to shield most of the light incident toward the second photodetection element 212, the first light shielding portion 310 serves as a second light shielding barrier to shield a trace of light penetrating through the first light shielding portion 310 and a trace of light which is reflected toward the second photodetection element 212 by the change of the propagation direction caused by refraction or scattering effect in the encapsulation layer 500, and the first light shielding portion 310 and the second light shielding portion 320 are combined to achieve a better light shielding effect, so that the obtained dark current is more accurate, and the output photosensitive signal is more accurate.
In some embodiments, referring to fig. 5 or fig. 6, the photodetection device further includes a color film layer 600 disposed on a side of the photodetection layer 200 away from the driving substrate 100 and correspondingly disposed on the plurality of first photodetection elements 211, and is generally disposed on the encapsulation layer 500, where the color film layer 600 includes a plurality of color film units 610, one color film unit 610 is correspondingly disposed on one first photodetection element 211, and an orthographic projection of one color film unit 610 on the driving substrate 100 covers an orthographic projection of the corresponding first photodetection element 211 on the driving substrate 100;
the color film unit 610 is selected from at least one of a red color film unit, a green color film unit, a blue color film unit, a purple color film unit and a yellow color film unit, or is selected from color film units of other colors according to actual requirements, which is not particularly limited in the present invention;
the color film units 610 are configured to filter light into light of a specific wavelength band, that is, only the light of the specific wavelength band is incident into the corresponding first photoelectric detection element 211, and the color and arrangement of the color film units 610 are set to meet different test requirements;
specifically, the photo detector not provided with the color film layer 600 in the foregoing embodiment may be used for testing heart rate, and the photo detector provided with the color film layer 600 in this embodiment may be used for testing heart rate, blood oxygen, blood components, and the like.
In some embodiments, a transparent cover plate is further disposed on a surface of the photodetecting device away from the substrate to protect the photodetecting elements inside.
The photoelectric detection device provided by the embodiment of the invention can be used in the fields of biomedical monitoring, fingerprint and palm print identification, optical interaction and the like; and the display device can be integrated with the display device, and has wide application prospect.
Another embodiment of the present invention further provides a photodetection method, using the photodetection device provided in the above embodiment, as follows with reference to fig. 7:
the photoelectric detection method comprises the following steps:
the driving substrate inputs driving signals to the first photoelectric detection element and the second photoelectric detection element;
the first photoelectric detection element generates a photocurrent under the irradiation of light;
the second photoelectric detection element generates dark current under the shielding of the light shielding layer;
the control unit acquires the photocurrent and the dark current and obtains a photosensitive signal according to the photocurrent and the dark current.
In some embodiments, the step of obtaining the photosensitive signal according to the photocurrent and the dark current comprises:
calculating to obtain a corrected photocurrent according to the photocurrent and the dark current by combining the following formula;
correcting the photocurrent to be photocurrent + dark current;
and obtaining the photosensitive signal according to the corrected photocurrent.
In some embodiments, the control unit is further configured to derive an ambient temperature from the dark current.
In the above embodiments, the descriptions of the respective embodiments have respective emphasis, and parts that are not described in detail in a certain embodiment may refer to the above detailed descriptions of other embodiments, and are not described herein again.
The above provides a detailed description of the photodetection device and method provided by the embodiments of the present invention, and the principles and embodiments of the present invention are explained in the present document by applying specific examples, and the above description of the embodiments is only used to help understanding the method and the core idea of the present invention; meanwhile, for those skilled in the art, according to the idea of the present invention, there may be variations in the specific embodiments and the application scope, and in summary, the content of the present specification should not be construed as a limitation to the present invention.
Claims (10)
1. A photodetecting device, characterized in that the photodetecting device comprises:
a drive substrate;
the photoelectric detection layer is arranged on the driving substrate and comprises a plurality of photoelectric detection elements which are arranged at intervals and electrically connected with the photoelectric detection layer, the plurality of photoelectric detection elements comprise a plurality of first photoelectric detection elements and at least one second photoelectric detection element, and the first photoelectric detection elements and the second photoelectric detection elements have the same structure;
the light shielding layer is arranged on one side, away from the driving substrate, of the photoelectric detection layer and correspondingly arranged on the second photoelectric detection element, and the orthographic projection of the light shielding layer on the driving substrate covers the orthographic projection of the second photoelectric detection element on the driving substrate;
the control unit is electrically connected with the plurality of first photoelectric detection elements and the at least one second photoelectric detection element respectively;
the first photoelectric detection element generates a photocurrent under the irradiation of light, the second photoelectric detection element generates a dark current under the shielding of the light shielding layer, and the control unit acquires the photocurrent and the dark current, obtains a photosensitive signal according to the photocurrent and the dark current, and outputs the photosensitive signal.
2. The photodetection device according to claim 1, characterized in that the control unit is further configured to derive and output an ambient temperature according to the dark current.
3. The photodetection device according to claim 1, wherein the light shielding layer comprises at least one light shielding portion correspondingly disposed on at least one of the second photodetection elements, and an orthogonal projection of one of the light shielding portions on the substrate covers an orthogonal projection of the corresponding second photodetection element on the substrate.
4. The photodetection device according to claim 3, wherein the light shielding portion is disposed on a surface of the corresponding second photodetection element away from the substrate, and a material of the light shielding portion is a metal.
5. The photodetection device according to claim 4, wherein the photodetection element comprises a first electrode, a photodetection functional layer disposed on the first electrode, and a second electrode disposed on the photodetection functional layer, and the light shielding portion is disposed on the second electrode of the corresponding second photodetection element and is made of the same material as the second electrode.
6. The photodetection device according to claim 3, further comprising an encapsulation layer disposed on a side of the photodetection layer away from the driving substrate, wherein the light shielding portion is disposed on the encapsulation layer, and a material of the light shielding portion is a black organic material.
7. The photodetection device according to claim 1, further comprising a color film layer disposed on a side of the photodetection layer away from the driving substrate and correspondingly disposed on the plurality of first photodetection elements, wherein the color film layer comprises a plurality of color film units, one color film unit is correspondingly disposed on one first photodetection element, and an orthographic projection of one color film unit on the substrate overlaps an orthographic projection of the corresponding first photodetection element on the substrate.
8. A photodetecting method, characterized in that the photodetecting device according to any one of claims 1 to 7 is used, said photodetecting method comprising the steps of:
the driving substrate inputs driving signals to the first photoelectric detection element and the second photoelectric detection element;
the first photoelectric detection element generates photocurrent under the irradiation of light;
the second photoelectric detection element generates dark current under the shielding of the light shielding layer;
the control unit acquires the photocurrent and the dark current, and obtains a photosensitive signal according to the photocurrent and the dark current and outputs the photosensitive signal.
9. The method of claim 8, wherein the step of obtaining the photosensitive signal from the photocurrent and the dark current comprises:
calculating to obtain a corrected photocurrent according to the photocurrent and the dark current by combining the following formula;
correcting photocurrent to photocurrent + dark current
And obtaining the photosensitive signal according to the corrected photocurrent.
10. The photodetection method according to claim 8, characterized in that the control unit further obtains an ambient temperature from the dark current and outputs it.
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