CN114812862A - Temperature measuring device and chemical vapor deposition equipment - Google Patents
Temperature measuring device and chemical vapor deposition equipment Download PDFInfo
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- CN114812862A CN114812862A CN202210569032.8A CN202210569032A CN114812862A CN 114812862 A CN114812862 A CN 114812862A CN 202210569032 A CN202210569032 A CN 202210569032A CN 114812862 A CN114812862 A CN 114812862A
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- 238000005229 chemical vapour deposition Methods 0.000 title claims abstract description 47
- 230000004323 axial length Effects 0.000 claims abstract description 9
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 29
- 229910002804 graphite Inorganic materials 0.000 claims description 29
- 239000010439 graphite Substances 0.000 claims description 29
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 23
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 21
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 5
- 239000010935 stainless steel Substances 0.000 claims description 4
- 229910001220 stainless steel Inorganic materials 0.000 claims description 4
- 239000000758 substrate Substances 0.000 claims description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 3
- 238000009529 body temperature measurement Methods 0.000 abstract description 27
- 230000005484 gravity Effects 0.000 abstract description 14
- 239000000463 material Substances 0.000 description 29
- 238000000034 method Methods 0.000 description 18
- 239000007789 gas Substances 0.000 description 17
- 230000008569 process Effects 0.000 description 17
- 230000008859 change Effects 0.000 description 11
- 238000000151 deposition Methods 0.000 description 11
- 230000008021 deposition Effects 0.000 description 11
- 230000002349 favourable effect Effects 0.000 description 10
- 238000012360 testing method Methods 0.000 description 8
- 239000007770 graphite material Substances 0.000 description 6
- 239000002243 precursor Substances 0.000 description 6
- 238000004088 simulation Methods 0.000 description 6
- 230000007797 corrosion Effects 0.000 description 5
- 238000005260 corrosion Methods 0.000 description 5
- 230000002035 prolonged effect Effects 0.000 description 5
- 230000004044 response Effects 0.000 description 5
- 238000007740 vapor deposition Methods 0.000 description 5
- 230000002411 adverse Effects 0.000 description 4
- 238000005452 bending Methods 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- 230000035939 shock Effects 0.000 description 4
- 238000005019 vapor deposition process Methods 0.000 description 4
- 230000009286 beneficial effect Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 230000002378 acidificating effect Effects 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910052755 nonmetal Inorganic materials 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 238000012958 reprocessing Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- SXRIPRHXGZHSNU-UHFFFAOYSA-N iridium rhodium Chemical class [Rh].[Ir] SXRIPRHXGZHSNU-UHFFFAOYSA-N 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000005055 methyl trichlorosilane Substances 0.000 description 1
- JLUFWMXJHAVVNN-UHFFFAOYSA-N methyltrichlorosilane Chemical compound C[Si](Cl)(Cl)Cl JLUFWMXJHAVVNN-UHFFFAOYSA-N 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- PXXKQOPKNFECSZ-UHFFFAOYSA-N platinum rhodium Chemical class [Rh].[Pt] PXXKQOPKNFECSZ-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K13/00—Thermometers specially adapted for specific purposes
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/04—Casings
- G01J5/048—Protective parts
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K1/00—Details of thermometers not specially adapted for particular types of thermometer
- G01K1/08—Protective devices, e.g. casings
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K1/00—Details of thermometers not specially adapted for particular types of thermometer
- G01K1/08—Protective devices, e.g. casings
- G01K1/10—Protective devices, e.g. casings for preventing chemical attack
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The application provides a temperature measuring device and chemical vapor deposition equipment, relates to temperature measurement technical field. The temperature measuring device comprises a multi-stage structure and a temperature measuring element which are horizontally arranged. The multistage structure is provided with multistage sleeves which are detachably connected along the axial direction of the multistage structure, the multistage structure is provided with a first end and a second end which are opposite along the axial direction of the multistage structure, the first end is a closed end, in any two adjacent stages of sleeves, the inner diameter of the sleeve close to the first end is smaller than that of the sleeve close to the second end, and the length of the sleeve close to the first end is smaller than that of the sleeve close to the second end; the axial length of the multi-stage structure is more than or equal to 800mm, the wall thickness of the sleeve at the first end is less than 3mm, the temperature measuring element is detachably arranged in the multi-stage structure and is used for measuring the temperature of the end part of the first end. Above-mentioned multilevel structure can improve temperature measuring device's anti dead weight ability to when temperature measuring device carries out the temperature measurement in being applied to chemical vapor deposition equipment, can slow down the skew degree of first end in the direction of gravity, improve the precision of temperature measurement.
Description
Technical Field
The application relates to the technical field of temperature measurement, in particular to a temperature measuring device and chemical vapor deposition equipment.
Background
At present, the measuring means of the deposition temperature in the chemical vapor deposition equipment mainly comprises a thermocouple and an infrared thermometer. However, for a chemical vapor deposition system of some materials, such as silicon nitride material, there are severe conditions such as high deposition temperature, long deposition time, and thick deposited film layer.
Usually, the chemical vapor deposition equipment directly adopts an infrared thermometer or a thermocouple as a temperature measuring element to measure the temperature.
The infrared thermometer measures the temperature by receiving the infrared energy on the surface of the material, but the method is very sensitive to the material and distance of the surface of the object to be measured, in addition, the surface condition of the object also influences the measurement, the growth process of the chemical vapor deposition material is the process that the film thickness is continuously increased and the material and the state of the surface of the deposition material are continuously changed, so that the measured temperature of the infrared thermometer is deviated from the actual temperature, and the process gas and the solid attachments which continuously flow in the furnace in the growth process also influence the process gas and the solid attachments, so when the existing infrared thermometer is used for measuring the temperature, the problem of inaccurate measurement is often faced.
The thermocouple generates an electric signal by using the temperature change at the temperature measuring node thereof to measure the temperature, but the thermocouple also faces a plurality of problems in the face of the strict deposition environment of chemical vapor deposition:
1. the deposition environment for a portion of the chemical vapor deposition material, such as a silicon carbide material, is acidic (H) 2 Cl), the protective material of the thermocouple is easy to corrode, and high temperature can generate large thermal shock to the thermocouple, so that the thermocouple is easy to damage;
2. for a large chemical vapor deposition chamber with an inner diameter larger than 1600mm, a corresponding thermocouple with a longer size is needed to detect the temperature at the center of the chamber, but the thermocouple with the longer length is affected by self weight and inevitably bent at the end, so that the accuracy of a temperature measurement result is affected; meanwhile, due to the long time of the industrial production of the chemical vapor deposition, the material deposited by the chemical vapor deposition can be continuously deposited on the surface of the thermocouple, especially the end part, thereby further aggravating the bending of the end part of the thermocouple and even causing the breakage, and causing the production accident.
3. The bending generated by the longer thermocouple can cause the disturbance influence of the airflow in the superposed cavity and also can cause the vibration of the thermocouple, thereby affecting the precision of the temperature measurement result on one hand, and also adversely affecting the flow field distribution on the other hand, and generating adverse effect on the vapor deposition process.
Disclosure of Invention
An object of the embodiment of the application is to provide a temperature measuring device and chemical vapor deposition equipment, it can improve current temperature measuring device when practical application is in jumbo size chemical vapor deposition and sets up, because the temperature measurement result that receives the crooked great lead to of dead weight is not accurate, easy vibration and then influence vapor deposition process and yield to and temperature element life-span is short, the high technical problem of replacement cost.
In a first aspect, an embodiment of the present application provides a temperature measuring device, which includes a horizontally arranged multi-stage structure and a temperature measuring element.
The multistage structure is provided with a multistage sleeve which is detachably connected along the axial direction of the multistage structure, the multistage structure is provided with a first end and a second end which are opposite along the axial direction of the multistage structure, the first end is a closed end, in any two adjacent stages of sleeves, the inner diameter of the sleeve close to the first end is smaller than that of the sleeve close to the second end, and the length of the sleeve close to the first end is smaller than that of the sleeve close to the second end; the axial length of the multi-stage structure is more than or equal to 800mm, and the wall thickness of the sleeve at the first end is less than 3 mm.
The temperature measuring element is detachably arranged in the multi-stage structure and used for measuring the temperature of the end part of the first end.
In the temperature measuring device that this application provided, at first, utilize the multilevel structure as the protective housing in order to protect temperature element, utilize first end to be the blind end, avoid deposit to influence the temperature of the tip of temperature element measurement first end in getting into the multilevel structure from the first end, not only avoid chemical vapor deposition material to deposit on the thermocouple surface, avoid the direct impact to temperature element of high temperature, can also avoid corroding temperature element when the deposition environment is acidity, thereby prolong temperature element's life, and can get rid of the feasibility of reprocessing with the surface deposit of multilevel structure among the in-service use process is high, thereby reduce the replacement cost. Secondly, the axial length of the multi-stage structure is more than or equal to 800mm, the length of the temperature measuring element can meet the use requirement of the chemical vapor deposition equipment with a large cavity, and the temperature measuring device adopting multi-stage arrangement has smaller integral maximum offset compared with a silicon carbide or graphite single-stage sleeve with the same length, is not easy to bend, vibrate and break, has less influence on the vapor deposition process, and has lower preparation and replacement cost. And then, the wall thickness of the sleeve at the first end is less than 3mm, and if the wall thickness is greater than 3mm, the change of the temperature outside the sleeve cannot be timely transmitted to the inner wall of the sleeve due to the excessively thick wall thickness, so that the response time of the temperature measuring element to the change of the temperature outside the sleeve is too long. Finally, adopt this application multi-stage structure's temperature measuring device, in utilizing arbitrary two adjacent sleeves, the telescopic internal diameter that is close to the first end is less than the telescopic internal diameter that is close to the second end, the telescopic length that is close to the first end is less than the telescopic length that is close to the second end, be favorable to providing the bearing nature of preferred, further improve temperature measuring device's anti dead weight ability simultaneously, thereby when temperature measuring device carries out the temperature measurement in being applied to chemical vapor deposition equipment, can slow down the skew degree of first end in the direction of gravity, be favorable to temperature measuring device to the timely feedback of temperature variation, improve the precision of temperature measurement.
Optionally, the wall thickness of the sleeve at the first end is less than or equal to 2mm, so that excellent response speed to temperature change outside the sleeve can be obtained.
In some alternative embodiments, the wall thickness of the sleeve proximate the first end is less than the wall thickness of the sleeve proximate the second end in any adjacent two-stage sleeve. In the implementation process, the wall thickness of the sleeve close to the first end is smaller than that of the sleeve close to the second end, the axial length of each stage of sleeve is reduced from the second end to the first end in sequence, the dead weight resistance of the temperature measuring device is favorably further improved, and the problems that the temperature measuring device and a temperature measuring element are bent, deformed, vibrated and even damaged due to the fact that the first end deviates relative to the second end when the temperature measuring device is applied to temperature measurement in chemical vapor deposition equipment, the temperature measuring accuracy is affected, the vapor deposition yield is high, and the service life of the temperature measuring device is prolonged are further improved.
In some alternative embodiments, the length of the sleeve at the first end is preferably in the range of 150mm to 240mm, and when the length is less than 150mm, the length of the sleeve at the first end is too short, and the length of the other sleeve, which is relatively thick, is too long, which may adversely affect the flow field distribution and control in the vapor deposition chamber; when the length is more than 240mm, the wall thickness of the sleeve at the first end is thin, so that elastic bending caused by gravity and vibration caused by gas disturbance become remarkable, and the temperature measurement accuracy and the yield of vapor deposition products are reduced.
In some alternative embodiments, the multi-stage structure has 2-5 stages of sleeves.
In the implementation process, the 2-5-level sleeve is convenient to process and manufacture and low in cost, and can meet the requirements of different temperature measurement lengths.
In some alternative embodiments, the material of each stage sleeve is silicon carbide, silicon nitride, graphite, alumina or stainless steel.
In the implementation process, the materials are high temperature resistant and corrosion resistant, and can be selected by a person skilled in the art according to the actual application environment. In some alternative embodiments, the multi-stage structure has a first sleeve, a second sleeve, and a third sleeve detachably connected along an axial direction thereof.
In the implementation process, the multistage structure is a three-stage sleeve, the structure is simple, the preparation is convenient, the stability is good, and the dead weight resistance of the temperature measuring device is favorably improved.
In some alternative embodiments, the material of the first sleeve is silicon carbide or graphite; the second sleeve is made of graphite; the third sleeve is made of graphite.
In the implementation process, the silicon carbide and graphite materials have excellent corrosion resistance and thermal shock resistance; silicon carbide or graphite are selected to first sleeve, and the lower graphite material of density is all selected for use to second sleeve and third sleeve, can reduce the dead weight influence to a certain extent to second sleeve and third sleeve select for use the graphite material effectively to reduce the replacement cost.
In some alternative embodiments, the wall thickness of the first sleeve is 2 mm; the wall thickness of the second sleeve is 5 mm; the wall thickness of the third sleeve was 10 mm.
In the above implementation, the wall thickness of the first sleeve is 2mm, so that excellent response speed to temperature change outside the sleeve can be obtained. The wall thickness of the second sleeve is larger than that of the first sleeve and smaller than that of the third sleeve, so that better bearing performance is provided, the dead weight resistance of the temperature measuring device is improved, and the problems that when the temperature measuring device is applied to chemical vapor deposition equipment for temperature measurement, the temperature measuring device and a temperature measuring element are bent, deformed, vibrated and even damaged due to the fact that the first end deviates relative to the second end, the temperature measuring accuracy is affected, the vapor deposition yield is reduced, and the service life of the temperature measuring device is prolonged are solved.
In some alternative embodiments, the first sleeve has a length of 200 mm; the length of the second sleeve is 250 mm; the length of the third sleeve is 350 mm.
In the implementation process, the lengths of the second sleeve and the third sleeve are increased to provide better supporting performance, so that the dead weight resistance of the temperature measuring device is improved, and the problems that when the temperature measuring device is applied to chemical vapor deposition equipment for temperature measurement, the temperature measuring device and a temperature measuring element are bent, deformed, vibrated and even broken due to the fact that the first end is deviated relative to the second end, the temperature measuring accuracy is affected, the vapor deposition yield is reduced and the service life of the temperature measuring device is prolonged are solved.
In some alternative embodiments, the temperature sensing element is a thermocouple or an infrared thermometer.
In a second aspect, an embodiment of the present application provides a chemical vapor deposition apparatus, which includes a furnace body, a stage, and the temperature measuring device provided in each of the above embodiments.
Wherein the furnace body is provided with a furnace chamber; the carrying platform is positioned in the furnace cavity and used for supporting the substrate; the temperature measuring device is positioned in the furnace cavity and above the carrying platform, the second end is connected with the furnace body and sealed by the furnace body, and the first end extends along the horizontal direction.
In the implementation process, the temperature measuring device is horizontally arranged in the cavity, so that the arrangement of a multi-stage structure is favorable for providing better bearing property and improving the dead weight resistance of the temperature measuring device, the deviation degree of the first end where the temperature measuring point is located in the gravity direction can be reduced, and when the temperature measuring device is actually applied to chemical vapor deposition equipment, particularly chemical vapor deposition equipment with a large furnace chamber, the temperature measuring device is favorable for timely feeding back temperature change, the temperature measuring accuracy is improved, and the temperature in the furnace is accurately controlled; and simultaneously, the adverse effect of vibration caused by the bending of the temperature measuring device on the vapor deposition process is reduced.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are required to be used in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present application and therefore should not be considered as limiting the scope, and for those skilled in the art, other related drawings can be obtained from the drawings without inventive effort.
FIG. 1 is a schematic structural view of a chemical vapor deposition apparatus according to example 1;
FIG. 2 is a schematic cross-sectional view of a temperature measuring device provided herein;
FIG. 3 is a schematic cross-sectional view of a multi-level structure provided herein;
FIG. 4 is a graph showing the results of simulation test of comparative example 1;
FIG. 5 is a graph showing the results of simulation test of comparative example 2;
FIG. 6 is a graph showing the results of simulation tests in example 2;
FIG. 7 is a graph showing the results of simulation tests in example 3;
FIG. 8 is a graph showing the results of simulation tests in example 4;
fig. 9 is a graph showing the results of simulation tests in example 5.
Icon: 10-a chemical vapor deposition apparatus; 100-furnace body; 101-furnace chamber; 103-air inlet; 105-an exhaust port; 110-a stage; 111-rotation axis; 120-a temperature measuring device; 130-a multilevel structure; 131-a first end; 133-a second end; 135-a first sleeve; 136-a second sleeve; 137-a third sleeve; 140-temperature measuring element.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are some embodiments of the present application, but not all embodiments. The components of the embodiments of the present application, generally described and illustrated in the figures herein, can be arranged and designed in a wide variety of different configurations.
Thus, the following detailed description of the embodiments of the present application, presented in the accompanying drawings, is not intended to limit the scope of the claimed application, but is merely representative of selected embodiments of the application. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, it need not be further defined and explained in subsequent figures.
In the description of the present application, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings or orientations or positional relationships that the products of the application usually place when in use, and are used only for convenience in describing the present application and simplifying the description, but do not indicate or imply that the devices or elements being referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus, should not be construed as limiting the present application. Furthermore, the terms "first," "second," "third," and the like are used solely to distinguish one from another and are not to be construed as indicating or implying relative importance.
Furthermore, the terms "horizontal", "vertical", "overhang" and the like do not imply that the components are required to be absolutely horizontal or overhang, but may be slightly inclined. For example, "horizontal" merely means that the direction is more horizontal than "vertical" and does not mean that the structure must be perfectly horizontal, but may be slightly inclined.
In the description of the present application, it is further noted that, unless expressly stated or limited otherwise, the terms "disposed," "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meaning of the above terms in the present application can be understood in a specific case by those of ordinary skill in the art.
It should be noted that the temperature measuring device provided by the present application is not only suitable for measuring temperature in chemical vapor deposition equipment, but also suitable for measuring temperature in other equipment such as a heating furnace, and the like.
For convenience of description, the temperature measuring device is applied to a chemical vapor deposition apparatus, and is specifically described as being applied to a silicon carbide material chemical vapor deposition apparatus.
Example 1
Referring to fig. 1, a chemical vapor deposition apparatus 10 mainly includes a furnace body 100, a carrier 110, and a temperature measuring device 120.
The furnace body 100 is provided with a furnace chamber 101, precursors and other reaction gases are reacted and deposited in the furnace chamber 101, wherein the furnace body 100 is provided with a gas inlet 103 and a gas outlet 105 which are communicated with the furnace chamber 101, the gas inlet 103 is used for conveying mixed gas containing the precursors and other reaction gases into the furnace chamber 101, the gas outlet 105 is used for discharging the mixed substances of unreacted precursors, gases, reaction products and other byproducts from the furnace chamber 101, so that new precursors and other reaction gases can enter the furnace chamber 101, and the position of the gas outlet 105 is lower than the level of the gas inlet 103.
The chamber 101 is generally circular in cross-section, and optionally the inner diameter of the chamber 101 is larger than or equal to 1600mm, i.e. the above-mentioned chemical vapor deposition apparatus 10 has a large chamber 101. In the present application, the furnace body 100 has an inner wall enclosing the furnace chamber 101, and the inner diameter refers to the diameter of the inner wall of the furnace body 100.
Illustratively, the inner diameter of the furnace chamber 101 is, for example, 1600mm, 1800mm, 2000mm or 3000mm, etc., which can be selected by a person skilled in the art according to the actual requirements.
In this embodiment, the inner diameter of the cavity 101 is 1600 mm.
A carrier 110 is located within the cavity 101, the carrier 110 being configured to hold a substrate.
The carrier 110 may be fixed in the furnace chamber 101, and in order to improve the uniformity of deposition, the carrier 110 may be rotatably disposed in the furnace chamber 101, for example, the carrier 110 may be connected to a bottom wall of the furnace chamber 101 through a rotating shaft 111, and the carrier 110 and the substrate are driven to rotate by the rotation of the rotating shaft 111.
It is understood that the carrier 110 may also be a multi-layer structure (not shown).
In the actual preparation process of the silicon carbide material, the deposition temperature of the silicon carbide inside the furnace body 100 is about 1400 ℃, the carrier gas hydrogen carries the precursor methyltrichlorosilane to enter the furnace chamber 101 through the gas inlet 103, the precursor is decomposed at a high temperature, the silicon carbide material is finally deposited through a complex decomposition reaction process, the unreacted gas and the mixed substance of other byproducts are discharged from the gas outlet 105, and the rotating shaft 111 drives the carrier 110 to rotate clockwise at a slow speed in the deposition process, for example, the rotating speed is 1 r/min.
Referring to fig. 1, the temperature measuring device 120 is located in the cavity 101, and the temperature measuring device 120 is used for measuring the temperature in the cavity 101.
Referring to fig. 2 and 3, the temperature measuring device 120 includes a multi-stage structure 130 and a temperature measuring element 140.
The multi-stage structure 130 is horizontally arranged, the multi-stage structure 130 has a multi-stage sleeve detachably connected along the axial direction thereof, the multi-stage structure 130 has a first end 131 and a second end 133 opposite to each other along the axial direction thereof, the first end 131 is a closed end, and the second end 133 is connected with the furnace body 100 as a connecting end. In any adjacent two-stage sleeve, the inner diameter of the sleeve near the first end 131 is smaller than that of the sleeve near the second end 133, and the length of the sleeve near the first end 131 is smaller than that of the sleeve near the second end 133; the axial length of the multilevel structure 130 is more than or equal to 800mm, and the wall thickness of the sleeve at the first end 131 is less than 3 mm; the temperature measuring element 140 is detachably installed in the multi-stage structure 130, and the temperature measuring element 140 is used for measuring the temperature of the end portion of the first end 131.
The inner diameter of the sleeve refers to the diameter of the inner wall of the sleeve.
The length of the sleeve located at the outermost side of the multi-stage sleeve and at the second end 133 is the distance between the ends at both ends thereof, as shown by L1 in fig. 3, and the lengths of the other sleeves are: in any adjacent two-stage sleeve, the sleeve near the second end 133 is used as the sleeve at the previous stage of the sleeve near the first end 131, where the length of the sleeve refers to the axial length of the sleeve exposed outside the sleeve at the previous stage, as shown in fig. 3 as L2 and L3.
In the temperature measuring device 120, firstly, the multi-stage structure 130 is used as a protective shell to protect the temperature measuring element 140, and the first end 131 is used as a closed end to prevent the deposit from entering the multi-stage structure 130 from the first end 131 to influence the temperature of the end part of the temperature measuring element 140, so that the chemical vapor deposition material is prevented from being deposited on the surface of the thermocouple, the impact of high temperature on the temperature measuring element 140 is avoided, the corrosion of the temperature measuring element 140 when the deposition environment is acidic is also avoided, the service life of the temperature measuring element 140 is prolonged, and the feasibility of removing and reprocessing the surface deposit of the multi-stage structure 130 in the actual use process is high, so that the replacement cost is reduced. Secondly, the axial length of the multi-stage structure 130 is more than or equal to 800mm, the length of the temperature measuring element 140 can meet the use requirement of the chemical vapor deposition equipment 10 with a large cavity, and at the moment, compared with a silicon carbide or graphite single-stage sleeve with the same length, the temperature measuring device 120 with multi-stage arrangement has smaller overall maximum offset and lower preparation and replacement cost. Then, the wall thickness of the sleeve at the first end 131 is less than 3mm, and if the wall thickness is greater than 3mm, the change of the temperature outside the sleeve cannot be timely transmitted to the inner wall of the sleeve due to the excessively thick wall thickness, so that the thermal response time of the temperature measuring element 140 is too long, and the temperature measuring accuracy is affected. Finally, adopt the temperature measuring device 120 of this application multilevel structure 130, in utilizing arbitrary two adjacent sleeves, the internal diameter of the sleeve that is close to first end 131 is less than the internal diameter of the sleeve that is close to second end 133, the length of the sleeve that is close to first end 131 is less than the length of the sleeve that is close to second end 133, be favorable to providing the bearing nature of preferred and improve temperature measuring device 120's anti dead weight ability, thereby when temperature measuring device 120 is applied to and carries out the temperature measurement in chemical vapor deposition equipment 10, can slow down the skew degree of first end 131 in the direction of gravity, be favorable to temperature measuring device 120 to the timely feedback of temperature change, improve the precision of temperature measurement.
The detachable connection between any two adjacent stages of sleeves is utilized, so that subsequent replacement is facilitated, and the maintenance cost is reduced.
It should be noted that the temperature measuring device 120 is not only suitable for a small-sized furnace chamber 101 (inner diameter < 1600mm), but also suitable for a large-sized furnace chamber 101 (inner diameter greater than or equal to 1600mm), and at this time, the first end 131 can be located in the middle of the large-sized furnace chamber 101 according to actual requirements. That is usable multi-stage structure 130's setting promptly, and the telescopic axial length at different levels who arranges in proper order to first end 131 from second end 133 reduces in proper order, be favorable to providing the bearing nature of preferred and reduce its dead weight influence, improve temperature measuring device 120's anti dead weight ability, thereby when temperature measuring device 120 is applied to and carries out the temperature measurement in chemical vapor deposition equipment 10, can slow down first end 131 at the skew degree of gravity direction, be favorable to temperature measuring device 120 to the timely feedback of temperature variation, improve the precision of temperature measurement.
Wherein, in any adjacent two-stage sleeve, the wall thickness of the sleeve near the first end 131 may be the same as or greater than the wall thickness of the sleeve near the second end 133.
To improve resistance to dead weight, optionally, the wall thickness of the sleeve near the first end 131 is smaller than the wall thickness of the sleeve near the second end 133 in any adjacent two-stage sleeve. The self-weight resistance of the temperature measuring device 120 can be further improved, and the problems that when the temperature measuring device 120 is applied to the chemical vapor deposition apparatus 10 for temperature measurement, the temperature measuring device 120 and the internal temperature measuring element 140 are bent, deformed, vibrated, and even broken due to the deviation of the first end 131 relative to the second end 133, which affects the temperature measuring accuracy, the chemical vapor deposition yield, and the service life of the chemical vapor deposition yield can be further improved.
The number of sleeves is at least two, e.g., 2, 3, 5, 7, etc., optionally, the multi-stage structure 130 has 2-5 sleeves, optionally, the multi-stage structure 130 has 3 sleeves.
The sleeves of each stage are made of non-metal or metal materials with acid and alkali resistance and high temperature resistance, for example, the sleeves of each stage are made of silicon carbide, silicon nitride, graphite, aluminum oxide or stainless steel, and the like, and can be selected by a person skilled in the art according to actual application scenarios.
Optionally, the material of each stage of the sleeve is silicon carbide or graphite.
The temperature measuring element 140 is a thermocouple or an infrared thermometer.
It should be noted that the red thermometer is very sensitive to the distance between the objects whose temperature is to be measured, and therefore when the temperature measuring element 140 is an infrared thermometer, it is predetermined that the first end 131 is substantially not shifted in the gravity direction during the actual measurement, and the substantially not shifted amount is, for example, a shift amount of the first end 131 in the gravity direction of < 0.6 mm.
In this embodiment, the temperature measuring element 140 is a thermocouple. The thermocouple has a temperature measuring point located at the first end 131, and the temperature measuring point is attached to the end of the first end 131.
The thermocouple comprises a protection tube and a thermocouple body positioned in the protection tube, wherein the protection tube can be made of metal or nonmetal materials according to the actual application environment, such as silicon carbide, silicon nitride, aluminum oxide, stainless steel and other metal materials. In this embodiment, the protection tube is made of alumina, and has better air tightness with the sleeve made of silicon carbide, so that the service life of the thermocouple can be prolonged.
The thermocouple body is preferably a noble metal alloy of the platinum rhodium series or the iridium rhodium series.
In order to improve the accuracy of temperature measurement, in the embodiment, referring to fig. 1, fig. 2 and fig. 3, the temperature measuring device 120 is located above the stage 110, and at this time, the second end 133 of the multi-stage structure 130 is connected to the furnace body 100 and is sealed by the furnace body 100, and the first end 131 extends along the horizontal direction. That is, the temperature measuring device 120 is horizontally disposed in the cavity 101.
Because temperature measuring device 120 level is arranged in the cavity and furnace chamber 101 is jumbo size furnace chamber 101, consequently utilize the setting of multi-stage structure 130, be favorable to providing the bearing nature of preferred and improve temperature measuring device 120's anti dead weight ability, can slow down the skew degree of first end 131 in the direction of gravity, be favorable to temperature measuring device 120 to the timely feedback of temperature variation, improve the precision of temperature measurement, realize the accurate control of furnace temperature.
In order to improve the temperature measurement accuracy, the end of the first end 131 is located at the middle position of the oven cavity 101, so that the temperature condition in the oven cavity 101 can be obtained more accurately. Referring to fig. 2 and 3, the multi-stage structure 130 has a first sleeve 135, a second sleeve 136 and a third sleeve 137 detachably connected along the axial direction thereof. That is, the multi-stage structure 130 is a three-stage sleeve structure.
Referring to fig. 2 and 3, the first sleeve 135 is made of silicon carbide or graphite; the second sleeve 136 is made of graphite; the third sleeve 137 is made of graphite. The silicon carbide and graphite materials have excellent corrosion resistance and thermal shock resistance; first sleeve 135 selects carborundum or graphite, and the lower graphite material of density is all selected for use to second sleeve 136 and third sleeve 137, can reduce the dead weight influence to a certain extent to second sleeve 136 and third sleeve 137 select for use the graphite material can effectively reduce the replacement cost.
Referring to fig. 2 and 3, the wall thickness of the first sleeve 135 is 2 mm; the wall thickness of the second sleeve 136 is 5 mm; the wall thickness of the third sleeve 137 is 10 mm. Under the above setting conditions, the first sleeve 135 has a good response speed to the temperature change outside the sleeve, and the wall thickness of the second sleeve 136 is greater than the first sleeve 135 and smaller than the third sleeve 137, which is beneficial to providing a better bearing property and improving the self-weight resistance of the temperature measuring device 120, and improving the problems that when the temperature measuring device 120 is applied to the chemical vapor deposition apparatus 10 for temperature measurement, the first end 131 deviates relative to the second end 133 to cause the temperature measuring device 120 and the internal temperature measuring element 140 to bend, deform, vibrate, or even break, which affects the temperature measurement accuracy, the chemical vapor deposition yield and the service life thereof.
Referring to fig. 2 and 3, the length of the first sleeve 135 is 200 mm; the length of the second sleeve 136 is 250 mm; the third sleeve 137 has a length of 350 mm. The lengths of the second sleeve 136 and the third sleeve 137 are increased to provide better supporting performance, which is beneficial to improving the self-weight resistance of the temperature measuring device 120, and improving the problems that when the temperature measuring device 120 is applied to the chemical vapor deposition apparatus 10 for temperature measurement, the first end 131 is shifted relative to the second end 133 to cause the temperature measuring device 120 and the internal temperature measuring element 140 to bend, deform, vibrate, or even break, which affects the temperature measuring accuracy, the chemical vapor deposition yield, and the service life thereof.
To sum up, the material, wall thickness and length of the first sleeve 135, the second sleeve 136 and the third sleeve 137 are controlled, so that the maximum integral offset of the temperature measuring device 120 can be controlled to be smaller than 1mm, and the timely feedback of the temperature measuring device 120 to the temperature change is ensured. Optionally, the first sleeve 135 is made of silicon carbide, which has excellent corrosion resistance and thermal shock resistance, and has high thermal conductivity, thereby facilitating accurate temperature measurement by the temperature measuring element 140.
Example 2
Referring to fig. 2 and fig. 3, the temperature measuring device 120 of the present embodiment includes a multi-stage structure 130 and a temperature measuring element 140 installed in the multi-stage structure 130.
The multi-stage structure 130 is a three-stage sleeve, and the multi-stage structure 130 has a first sleeve 135, a second sleeve 136 and a third sleeve 137 detachably connected from a first end 131 to a second end 133 along an axial direction thereof; the inner diameter of the first sleeve 135 is 4mm, the wall thickness is 2mm, the length is 200mm, and the material is graphite; the inner diameter of the second sleeve 136 is 16mm, the wall thickness is 5mm, the length is 240mm, and the material is graphite; the third sleeve 137 has an inner diameter of 40mm, a wall thickness of 10mm, a length of 360mm, and is made of graphite.
The temperature measuring element 140 is a thermocouple, and the temperature measuring element 140 detects the temperature of the end portion of the first end 131.
Example 3
Referring to fig. 2 and fig. 3, the temperature measuring device 120 of the present embodiment includes a multi-stage structure 130 and a temperature measuring element 140 installed in the multi-stage structure 130.
The multi-stage structure 130 is a three-stage sleeve, and the multi-stage structure 130 has a first sleeve 135, a second sleeve 136 and a third sleeve 137 detachably connected from a first end 131 to a second end 133 along an axial direction thereof; the inner diameter of the first sleeve 135 is 4mm, the wall thickness is 2mm, the length is 200mm, and the material is silicon carbide; the second sleeve 136 has an inner diameter of 16mm, a wall thickness of 5mm, a length of 240mm and is made of graphite; the third sleeve 137 has an inner diameter of 40mm, a wall thickness of 10mm, a length of 360mm, and is made of graphite.
The temperature measuring element 140 is a thermocouple, and the temperature measuring element 140 detects the temperature of the end portion of the first end 131.
Example 4
Referring to fig. 2 and fig. 3, the temperature measuring device 120 of the present embodiment includes a multi-stage structure 130 and a temperature measuring element 140 installed in the multi-stage structure 130.
The multi-stage structure 130 is a three-stage sleeve, and the multi-stage structure 130 has a first sleeve 135, a second sleeve 136 and a third sleeve 137 detachably connected from a first end 131 to a second end 133 along an axial direction thereof; the inner diameter of the first sleeve 135 is 4mm, the wall thickness is 2mm, the length is 240mm, and the material is graphite; the second sleeve 136 has an inner diameter of 16mm, a wall thickness of 5mm, a length of 200mm and is made of graphite; the third sleeve 137 has an inner diameter of 40mm, a wall thickness of 10mm, a length of 360mm, and is made of graphite.
The temperature measuring element 140 is a thermocouple, and the temperature measuring element 140 detects the temperature of the end portion of the first end 131.
Example 5
Referring to fig. 2 and fig. 3, the temperature measuring device 120 of the present embodiment includes a multi-stage structure 130 and a temperature measuring element 140 installed in the multi-stage structure 130.
The multi-stage structure 130 is a three-stage sleeve, and the multi-stage structure 130 has a first sleeve 135, a second sleeve 136 and a third sleeve 137 detachably connected from a first end 131 to a second end 133 along the axial direction thereof; the inner diameter of the first sleeve 135 is 4mm, the wall thickness is 2mm, the length is 200mm, and the material is graphite; the second sleeve 136 has an inner diameter of 16mm, a wall thickness of 5mm, a length of 300mm and is made of graphite; the third sleeve 137 has an inner diameter of 40mm, a wall thickness of 10mm, a length of 300mm, and is made of graphite.
The temperature measuring element 140 is a thermocouple, and the temperature measuring element 140 detects the temperature of the end portion of the first end 131.
Comparative example 1
The temperature measuring device comprises a single-stage sleeve and a temperature measuring element arranged in the sleeve.
The sleeve extends from the first end to the second end, and telescopic internal diameter is 4mm, and the wall thickness is 2mm, and length is 800mm, and the material is graphite. The temperature measuring element is a thermocouple and is used for detecting the temperature of the end part of the first end.
Comparative example 2
The temperature measuring device comprises a single-stage sleeve and a temperature measuring element arranged in the sleeve.
The sleeve extends from the first end to the second end, and telescopic internal diameter is 4mm, and the wall thickness is 2mm, and length is 800mm, and the material is carborundum. The temperature measuring element is a thermocouple and is used for detecting the temperature of the end part of the first end.
Test examples
The ambient temperature was set to 1300 ℃, and the effect of the deposition on the sleeve surface by the CVD process on the deformation of the sleeve was ignored, and the temperature measuring devices provided in examples 2, 3, 4, 5, 1 and 2 were subjected to finite element stress analysis using simulation software, respectively, to obtain the amount of deformation URES (in mm) in the direction of gravity of the first end of the horizontally arranged temperature measuring device, and the results are shown in table 1 and fig. 4, 5, 6, 7, 8 and 9.
TABLE 1 test results
According to table 1 and fig. 4 to 9, embodiments 2 to 5 can significantly improve the maximum offset in the gravity direction of the first end, so that the maximum offset in the gravity direction of the first end can be within 0.87mm, especially embodiments 2 to 3 can make the maximum offset in the gravity direction of the first end within 0.52 mm. That is, the temperature measuring device that this application provided is particularly useful for among the big furnace chamber chemical vapor deposition equipment, can show and reduce the biggest offset of temperature measuring point level, improves the precision of temperature measurement.
In conclusion, the temperature measuring device provided by the application utilizes the multi-stage structure to provide better bearing performance, utilizes the improvement of the multi-stage structure to improve the self-weight resistance of the temperature measuring device, can reduce the deviation degree of the first end where the temperature measuring point is located in the gravity direction, and is beneficial to timely feedback of the temperature measuring device on temperature change when the temperature measuring device is actually applied to chemical vapor deposition equipment, particularly chemical vapor deposition equipment with a large-size furnace chamber, so that the temperature measuring precision is improved, and the accurate control of the temperature in the furnace is realized.
The above description is only a preferred embodiment of the present application and is not intended to limit the present application, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, improvement and the like made within the spirit and principle of the present application shall be included in the protection scope of the present application.
Claims (10)
1. A temperature measuring device, comprising:
the multi-stage structure is horizontally arranged and provided with a multi-stage sleeve detachably connected along the axial direction of the multi-stage structure, the multi-stage structure is provided with a first end and a second end which are opposite along the axial direction of the multi-stage structure, the first end is a closed end, the inner diameter of the sleeve close to the first end is smaller than that of the sleeve close to the second end in any two adjacent stages of the sleeves, and the length of the sleeve close to the first end is smaller than that of the sleeve close to the second end; the axial length of the multi-stage structure is more than or equal to 800mm, and the wall thickness of the sleeve at the first end is less than 3 mm; and
and the temperature measuring element is detachably arranged in the multi-stage structure and is used for measuring the temperature of the end part of the first end.
2. The thermometric apparatus of claim 1, wherein the wall thickness of said sleeve proximate said first end is less than the wall thickness of said sleeve proximate said second end in any adjacent two-stage sleeve.
3. The thermometric apparatus of claim 1, wherein the multi-stage structure has a 2-5 stage sleeve.
4. The temperature measuring device of claim 1, wherein each of said sleeves is made of silicon carbide, silicon nitride, graphite, alumina or stainless steel.
5. The temperature measuring device according to any one of claims 1 to 4, wherein the multi-stage structure has a first sleeve, a second sleeve and a third sleeve detachably connected in an axial direction thereof.
6. The temperature measuring device of claim 5, wherein the first sleeve is made of silicon carbide or graphite;
the second sleeve is made of graphite;
the third sleeve is made of graphite.
7. The temperature measuring device of claim 5, wherein said first sleeve has a wall thickness of 2 mm;
the wall thickness of the second sleeve is 5 mm;
the wall thickness of the third sleeve is 10 mm.
8. The thermometric apparatus of claim 5, wherein the length of said first sleeve is 200 mm;
the length of the second sleeve is 250 mm;
the length of the third sleeve is 350 mm.
9. The temperature measuring device of any one of claims 1-4, wherein the temperature measuring element is a thermocouple or an infrared thermometer.
10. A chemical vapor deposition apparatus, comprising:
a furnace body having a furnace chamber;
the carrying platform is positioned in the furnace cavity and used for bearing the substrate; and
the temperature measuring device of any one of claims 1-9, located within the furnace chamber and above the stage, the second end being connected to and enclosed by the furnace body, the first end extending in a horizontal direction.
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| CN115652290A (en) * | 2022-09-28 | 2023-01-31 | 新美光(苏州)半导体科技有限公司 | Chemical vapor deposition equipment |
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Application publication date: 20220729 |