CN114784497B - High-power-resistant three-dimensional frequency-selective radome structure - Google Patents
High-power-resistant three-dimensional frequency-selective radome structure Download PDFInfo
- Publication number
- CN114784497B CN114784497B CN202210471782.1A CN202210471782A CN114784497B CN 114784497 B CN114784497 B CN 114784497B CN 202210471782 A CN202210471782 A CN 202210471782A CN 114784497 B CN114784497 B CN 114784497B
- Authority
- CN
- China
- Prior art keywords
- layer
- low
- loss
- dielectric
- thickness
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/42—Housings not intimately mechanically associated with radiating elements, e.g. radome
- H01Q1/422—Housings not intimately mechanically associated with radiating elements, e.g. radome comprising two or more layers of dielectric material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q17/00—Devices for absorbing waves radiated from an antenna; Combinations of such devices with active antenna elements or systems
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D30/00—Reducing energy consumption in communication networks
- Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks
Abstract
The invention discloses a high-power-resistant three-dimensional frequency-selective radome structure, which is formed by periodic units of a three-dimensional periodic structure, wherein the same periodic units are arranged according to a certain period; the periodic unit consists of a three-level eight-layer structure, and the material comprises a skin, a dielectric material and a low-loss medium; the first layer from the top to the inside is a skin; the second layer is made of dielectric materials, and low-loss dielectrics are arranged on two sides of the dielectric materials; the third layer is a low-loss medium; the fourth layer is made of dielectric materials, and low-loss dielectrics are arranged on two sides of the dielectric materials; the fifth layer is a low-loss medium; the sixth layer is made of dielectric materials, and low-loss dielectrics are arranged on two sides of the dielectric materials; the seventh layer is a low-loss medium; the eighth layer is a skin. According to the invention, through designing the electromagnetic coupling mode between three-dimensional dielectric materials, the scattering loss of in-band electromagnetic waves is reduced, the frequency selection function of low insertion loss and high out-of-band rejection is realized, and the electromagnetic wave irradiation with high power density can be tolerated.
Description
Technical Field
The invention relates to the technical field of functional electromagnetic materials, in particular to a high-power-resistant three-dimensional frequency-selective radome structure.
Background
The antenna housing of the current high-power radar is mainly a full wave-transparent medium antenna housing, does not have a frequency selection function, and conventional metal structure frequency selection materials cannot withstand high-power electromagnetic wave irradiation of the high-power radar due to a field enhancement effect caused by a small metal gap.
Disclosure of Invention
The invention aims to solve the technical problem of providing a high-power-resistant three-dimensional frequency-selective radome structure aiming at the defects in the prior art.
The technical scheme adopted for solving the technical problems is as follows:
the invention provides a high-power-resistant three-dimensional frequency-selective radome structure, which is formed by periodic units of a three-dimensional periodic structure, wherein the same periodic units are arranged according to a certain period; the periodic unit consists of a three-level eight-layer structure, and the material comprises a skin, a dielectric material and a low-loss medium; the first layer from the top to the inside is a skin; the second layer is made of dielectric materials, and low-loss dielectrics are arranged on two sides of the dielectric materials; the third layer is a low-loss medium; the fourth layer is made of dielectric materials, and low-loss dielectrics are arranged on two sides of the dielectric materials; the fifth layer is a low-loss medium; the sixth layer is made of dielectric materials, and low-loss dielectrics are arranged on two sides of the dielectric materials; the seventh layer is a low-loss medium; the eighth layer is a skin.
Further, the periodic unit of the present invention includes three stages: s1, S2 and S3; wherein the dielectric material of the second layer, the low loss dielectric and the low loss dielectric of the third layer comprise a S1 level; the dielectric material of the fourth layer, the low-loss dielectric and the low-loss dielectric of the fifth layer form a S2 level; the dielectric material of the sixth layer, the low loss dielectric, and the low loss dielectric of the seventh layer comprise stage S3.
Further, in the periodic unit of the present invention, the first layer is a skin having a thickness m 1; the second layer is a dielectric material with a width W1 and a thickness L1, and the two sides of the dielectric material are low-loss dielectrics with a width d1 and a thickness L1; the third layer is a low-loss medium with the thickness d2 of W1+2 d 1; the fourth layer is a dielectric material with a width W2 and a thickness L2, and the two sides of the dielectric material are low-loss dielectrics with a width d1 and a thickness L2; the fifth layer is a low-loss medium with the thickness d3 of W2+2 d 1; the sixth layer is a dielectric material with a width W3 and a thickness L3, and the two sides of the dielectric material are low-loss dielectrics with a width d1 and a thickness L3; the seventh layer is a low-loss medium with the width W3 < + > 2 < + > d1 thickness d 4; the eighth layer is a skin with a thickness of m 2.
Furthermore, in the three-dimensional frequency-selective radome structure, the scattering loss of in-band electromagnetic waves is reduced by designing the electromagnetic coupling mode between three-dimensional dielectric materials, and the out-of-band rejection is enhanced by multistage design, so that the frequency-selective selection function with low insertion loss and high out-of-band rejection is realized.
Furthermore, the three-dimensional frequency-selective radome structure is entirely constructed by the medium, and can resist electromagnetic wave irradiation with high power density due to the high breakdown voltage and temperature resistance of the medium material, and can be used as a frequency-selective radome of a high-power radar.
The invention has the beneficial effects that: according to the high-power-resistant three-dimensional frequency-selective radome structure, the electromagnetic coupling mode between three-dimensional dielectric materials is designed, so that scattering loss of in-band electromagnetic waves is reduced, and out-of-band rejection is enhanced through multistage design, so that the frequency selection function of low insertion loss and high out-of-band rejection is realized. Meanwhile, the three-dimensional structure scheme is entirely constructed by a medium, and the structure can resist electromagnetic wave irradiation with high power density due to the high breakdown voltage and temperature resistance of the medium material. An effective solution is provided for the application problem of the frequency-selective radome of the high-power radar.
Drawings
The invention will be further described with reference to the accompanying drawings and examples, in which:
fig. 1 is a diagram of simulation results of a high-power-resistant three-dimensional frequency selective radome structure according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram (side view + top view) of a high-power-resistant three-dimensional frequency-selective radome unit according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of a periodic structure of a high-power-resistant three-dimensional frequency selective radome according to an embodiment of the present invention;
FIG. 4 is a graph showing the wave-transparent performance test of a high-power-resistant three-dimensional frequency-selective radome structure according to an embodiment of the present invention;
fig. 5 is a diagram of a high power tolerant three-dimensional frequency selective radome structure power tolerant test according to an embodiment of the present invention.
Detailed Description
The present invention will be described in further detail with reference to the drawings and examples, in order to make the objects, technical solutions and advantages of the present invention more apparent. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the invention.
Fig. 1 is a simulation result of the above structure. Fig. 2 is a schematic diagram of a high-power-resistant three-dimensional frequency-selective radome unit structure provided by the embodiment of the invention, and the structure is a three-dimensional periodic structure formed by periodic units, and the same periodic units are arranged according to a certain period. The periodic unit consists of eight layers of three-level (S1, S2 and S3) structures, and comprises materials such as a skin, a dielectric material, a low-loss medium and the like. The first layer from the top to the inside is a skin with the thickness of m 1; the second layer is a dielectric material with a width W1 and a thickness L1, and the two sides of the dielectric material are low-loss dielectrics with a width d1 and a thickness L1; the third layer is a low-loss medium with the thickness d2 of W1+2 d 1; the fourth layer is a dielectric material with a width W2 and a thickness L2, and the two sides of the dielectric material are low-loss dielectrics with a width d1 and a thickness L2; the fifth layer is a low-loss medium with the thickness d3 of W2+2 d 1; the sixth layer is a dielectric material with a width W3 and a thickness L3, and the two sides of the dielectric material are low-loss dielectrics with a width d1 and a thickness L3; the seventh layer is a low-loss medium with the width W3 < + > 2 < + > d1 thickness d 4; the eighth layer is a skin with a thickness of m 2.
Fig. 3 is a schematic diagram of a periodic structure of a high-power-resistant three-dimensional frequency-selective radome according to an embodiment of the present invention. Fig. 4 is a frequency selective performance test chart of the above structure. Fig. 5 is a graph of high power electromagnetic wave test that can be tolerated by the above structure.
Simulation and experimental tests show that the center frequency of the high-power-resistant three-dimensional frequency-selective radome structure is 9.375GHz; insertion loss is less than 0.45dB; the out-of-band suppression degree of the stop band is greater than 15dB; the transition bandwidth from passband to stopband is less than 0.5GHz; the testable tolerating field strength is greater than 38kv/m.
The invention designs a three-dimensional all-dielectric structural scheme for enhancing transmission electromagnetic coupling, reduces scattering loss of in-band electromagnetic waves, and enhances out-of-band rejection through multistage design, thereby realizing a frequency selection function of low insertion loss and high out-of-band rejection. Meanwhile, the three-dimensional structure scheme is entirely constructed by a medium, and the structure can resist electromagnetic wave irradiation with high power density due to the high breakdown voltage and temperature resistance of the medium material.
It will be understood that modifications and variations will be apparent to those skilled in the art from the foregoing description, and it is intended that all such modifications and variations be included within the scope of the following claims.
Claims (4)
1. The high-power-resistant three-dimensional frequency-selective radome structure is characterized by being a three-dimensional periodic structure and comprising periodic units; the periodic unit consists of a three-level eight-layer structure, and the first layer from the top to the bottom is a skin; the second layer is made of dielectric materials and low-loss dielectrics, the low-loss dielectrics are arranged on two sides of the dielectric materials, and the arrangement direction of the dielectric materials and the low-loss dielectrics is perpendicular to the directions of the first layer to the eighth layer; the third layer is a low-loss medium; the fourth layer is made of dielectric materials and low-loss dielectrics, the low-loss dielectrics are arranged on two sides of the dielectric materials, and the arrangement direction of the dielectric materials and the low-loss dielectrics is perpendicular to the directions of the first layer to the eighth layer; the fifth layer is a low-loss medium; the sixth layer is made of dielectric materials and low-loss dielectrics, the low-loss dielectrics are arranged on two sides of the dielectric materials, and the arrangement direction of the dielectric materials and the low-loss dielectrics is perpendicular to the directions of the first layer to the eighth layer; the seventh layer is a low-loss medium; the eighth layer is a skin;
the periodic unit comprises three stages S1, S2 and S3; wherein the dielectric material of the second layer, the low loss dielectric and the low loss dielectric of the third layer comprise a S1 level; the dielectric material of the fourth layer, the low-loss dielectric and the low-loss dielectric of the fifth layer form a S2 level; the dielectric material of the sixth layer, the low loss dielectric, and the low loss dielectric of the seventh layer comprise stage S3.
2. The high-power-resistant three-dimensional frequency-selective radome structure according to claim 1, wherein in the three-dimensional frequency-selective radome structure, an electromagnetic coupling mode between three-dimensional dielectric materials is designed, scattering loss of in-band electromagnetic waves is reduced, out-of-band rejection is enhanced through multistage design, and frequency selection with low insertion loss and high out-of-band rejection is achieved.
3. The high power resistant three-dimensional frequency selective radome structure of claim 1, wherein in the periodic unit, the first layer is a skin having a thickness of m 1; the second layer is a dielectric material with a width W1 and a thickness L1, and the two sides of the dielectric material are low-loss dielectrics with a width d1 and a thickness L1; the third layer is a low-loss medium with the width W1+2 x d1 and the thickness d 2; the fourth layer is a dielectric material with a width W2 and a thickness L2, and the two sides of the dielectric material are low-loss dielectrics with a width d1 and a thickness L2; the fifth layer is a low-loss medium with the width W2 < + > d1 and the thickness d 3; the sixth layer is a dielectric material with a width W3 and a thickness L3, and the two sides of the dielectric material are low-loss dielectrics with a width d1 and a thickness L3; the seventh layer is a low-loss medium with the width W3 < + > 2 < + > d1 and the thickness d 4; the eighth layer is a skin with a thickness of m 2.
4. The high power resistant three-dimensional frequency selective radome structure of claim 1, wherein the three-dimensional frequency selective radome structure is entirely constructed of a medium capable of withstanding electromagnetic wave irradiation at high power density.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210471782.1A CN114784497B (en) | 2022-04-29 | 2022-04-29 | High-power-resistant three-dimensional frequency-selective radome structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210471782.1A CN114784497B (en) | 2022-04-29 | 2022-04-29 | High-power-resistant three-dimensional frequency-selective radome structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN114784497A CN114784497A (en) | 2022-07-22 |
| CN114784497B true CN114784497B (en) | 2023-05-16 |
Family
ID=82434713
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210471782.1A Active CN114784497B (en) | 2022-04-29 | 2022-04-29 | High-power-resistant three-dimensional frequency-selective radome structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN114784497B (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB0312952D0 (en) * | 2002-06-07 | 2003-07-09 | Murata Manufacturing Co | Three-dimensional periodic structure method of producing the same high frequency element and high frequency apparatus |
| CN105186132A (en) * | 2015-10-13 | 2015-12-23 | 中国舰船研究设计中心 | Low-loss micro-unit low-pass frequency selection surface radome and manufacturing method |
| CN105304980A (en) * | 2015-09-25 | 2016-02-03 | 中国人民解放军空军工程大学 | Band stop type frequency selection surface based on low dielectric meta-material |
| CN107508017A (en) * | 2017-08-10 | 2017-12-22 | 杭州电子科技大学 | A kind of band inhales molded breadth band frequency selecting structures and its application |
| CN109449593A (en) * | 2018-12-04 | 2019-03-08 | 航天科工武汉磁电有限责任公司 | A kind of broad passband antenna house and its application |
| CN111613892A (en) * | 2020-06-29 | 2020-09-01 | 中国舰船研究设计中心 | Double-side steep out-of-band rejection frequency selection radome composite material interlayer structure |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7554499B2 (en) * | 2006-04-26 | 2009-06-30 | Harris Corporation | Radome with detuned elements and continuous wires |
| US8111206B2 (en) * | 2009-08-31 | 2012-02-07 | Chung-Shan Institute Of Science And Technology, Armaments Bureau, Ministry Of National Defense | High electromagnetic transmission composite structure |
| CN102856655B (en) * | 2012-07-31 | 2014-12-10 | 深圳光启创新技术有限公司 | Metamaterial frequency selection surface and metamaterial frequency selection antenna cover and antenna system manufactured by same |
| EP3345245A1 (en) * | 2016-09-14 | 2018-07-11 | Raytheon Company | High performance plastic radome |
| CN112873899A (en) * | 2020-12-25 | 2021-06-01 | 上海玻璃钢研究院有限公司 | Manufacturing method of broadband high-power-resistant housing |
-
2022
- 2022-04-29 CN CN202210471782.1A patent/CN114784497B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB0312952D0 (en) * | 2002-06-07 | 2003-07-09 | Murata Manufacturing Co | Three-dimensional periodic structure method of producing the same high frequency element and high frequency apparatus |
| CN105304980A (en) * | 2015-09-25 | 2016-02-03 | 中国人民解放军空军工程大学 | Band stop type frequency selection surface based on low dielectric meta-material |
| CN105186132A (en) * | 2015-10-13 | 2015-12-23 | 中国舰船研究设计中心 | Low-loss micro-unit low-pass frequency selection surface radome and manufacturing method |
| CN107508017A (en) * | 2017-08-10 | 2017-12-22 | 杭州电子科技大学 | A kind of band inhales molded breadth band frequency selecting structures and its application |
| CN109449593A (en) * | 2018-12-04 | 2019-03-08 | 航天科工武汉磁电有限责任公司 | A kind of broad passband antenna house and its application |
| CN111613892A (en) * | 2020-06-29 | 2020-09-01 | 中国舰船研究设计中心 | Double-side steep out-of-band rejection frequency selection radome composite material interlayer structure |
Also Published As
| Publication number | Publication date |
|---|---|
| CN114784497A (en) | 2022-07-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN1874053B (en) | Miniaturized band-pass filter with harmonic suppression for loading fan-shaped offset of microstrip | |
| Lee et al. | Band-notched balanced UWB BPF with stepped-impedance slotline multi-mode resonator | |
| US10622693B2 (en) | Filter unit and filter | |
| CN110797614B (en) | Miniaturized substrate integrated waveguide filter with high-order mode suppression | |
| JP7468937B2 (en) | Fourth-order Ka-band bandpass filter based on printed ridge gap waveguides | |
| CN115603061B (en) | Three-dimensional ultra-wideband energy selection surface | |
| CN111403876A (en) | Small-sized mixed mode filter with two resonant cavities | |
| US5164358A (en) | Superconducting filter with reduced electromagnetic leakage | |
| CN114784497B (en) | High-power-resistant three-dimensional frequency-selective radome structure | |
| US6741142B1 (en) | High-frequency circuit element having means for interrupting higher order modes | |
| Chen et al. | Symmetric dual-mode filter based on substrate integrated waveguide (SIW) | |
| CN110729532B (en) | Dual polarization absorbing/transmitting frequency selection structure based on wave absorbing silicon rubber | |
| US7183874B2 (en) | Casing contained filter | |
| US20220416384A1 (en) | Dielectric filter and communication device | |
| KR20100088329A (en) | Coplaner waveguide having multi-frequency resonance property | |
| US10673111B2 (en) | Filtering unit and filter | |
| Morales-Hernández et al. | Cover-ended resonators to increase corona discharge thresholds in microstrip bandpass filters | |
| Yahya et al. | Design and fabrication of a novel ultra compact microstrip diplexer using interdigital and spiral cells | |
| EP1581980B1 (en) | Waveguide e-plane rf bandpass filter with pseudo-elliptic response | |
| Marimuthu et al. | Wideband and harmonic suppression method of parallel coupled microstrip bandpass filter using centered single groove | |
| Her et al. | Coplanar waveguide (CPW) defected ground structure (DGS) for bandpass filter application | |
| Ghosh et al. | Bandpass characteristics of substrate integrated waveguide loaded with Hilbert curve fractal slot | |
| Suntheralingam et al. | Enhanced waveguide bandpass filters using S‐shaped resonators | |
| CN217507620U (en) | Multilayer waveguide circulator | |
| WO2022161178A1 (en) | Bandstop filter and multi-stopband filter |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |