CN114774884B - Furnace door of semiconductor process furnace and semiconductor process furnace - Google Patents
Furnace door of semiconductor process furnace and semiconductor process furnace Download PDFInfo
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- CN114774884B CN114774884B CN202210461291.9A CN202210461291A CN114774884B CN 114774884 B CN114774884 B CN 114774884B CN 202210461291 A CN202210461291 A CN 202210461291A CN 114774884 B CN114774884 B CN 114774884B
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- 238000000034 method Methods 0.000 title claims abstract description 168
- 230000008569 process Effects 0.000 title claims abstract description 168
- 239000004065 semiconductor Substances 0.000 title claims abstract description 67
- 238000001816 cooling Methods 0.000 claims abstract description 151
- 239000006227 byproduct Substances 0.000 claims abstract description 76
- 238000010438 heat treatment Methods 0.000 claims abstract description 32
- 238000007789 sealing Methods 0.000 claims abstract description 32
- 239000000112 cooling gas Substances 0.000 claims abstract description 29
- 238000001514 detection method Methods 0.000 claims abstract description 18
- 238000004891 communication Methods 0.000 claims description 10
- 230000002093 peripheral effect Effects 0.000 claims description 3
- 239000002245 particle Substances 0.000 abstract description 20
- 230000005494 condensation Effects 0.000 abstract description 18
- 238000009833 condensation Methods 0.000 abstract description 18
- 229910021645 metal ion Inorganic materials 0.000 abstract description 14
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 31
- 235000019270 ammonium chloride Nutrition 0.000 description 15
- 239000007789 gas Substances 0.000 description 9
- 235000012431 wafers Nutrition 0.000 description 6
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 5
- 230000002035 prolonged effect Effects 0.000 description 5
- 238000005260 corrosion Methods 0.000 description 4
- 230000007797 corrosion Effects 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 4
- 239000002184 metal Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4409—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber characterised by sealing means
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4411—Cooling of the reaction chamber walls
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Furnace Details (AREA)
Abstract
The invention provides a furnace door of a semiconductor process furnace and the semiconductor process furnace, wherein a furnace door body is used for sealing a furnace body of the semiconductor process furnace, air cooling channels are arranged in the furnace door body and are uniformly distributed in the furnace door body, the air cooling channels are used for introducing cooling gas with preset temperature, and the cooling gas comprises process byproducts which are in a gaseous state at the preset temperature; the detection component is used for detecting whether the gaseous process byproducts are condensed in the air cooling channel; the heating component is arranged on the furnace door body and is used for heating the furnace door body until the process byproducts are restored to the gaseous state when the detection component detects that the gaseous process byproducts are condensed in the air cooling channel. The furnace door of the semiconductor process furnace and the semiconductor process furnace provided by the invention can reduce the generation of condensation particles and metal ions of process byproducts, thereby improving the process result, prolonging the service life of parts and improving the utilization rate of the process furnace.
Description
Technical Field
The invention relates to the technical field of semiconductor equipment, in particular to a furnace door of a semiconductor process furnace and the semiconductor process furnace.
Background
As shown in fig. 1, a vertical process furnace used in the existing low pressure chemical vapor deposition (Low PressureChemical Vapor Deposition, abbreviated as LPCVD) process comprises a furnace body and a furnace door 11, the furnace body comprises a vertical furnace tube 12 and a base 13, the vertical furnace tube 12 is arranged on the base 13 and is sealed with the base 13, the furnace door 11 can bear a wafer boat 14 for bearing wafers to lift, a sealing ring is arranged on one surface of the furnace door 11 facing the base 13, and a ring-shaped water cooling channel opposite to the sealing ring is also arranged in the furnace door 11. In the semiconductor process, the furnace door 11 carries the wafer boat 14 to rise, so that the wafer boat 14 is positioned in the vertical furnace tube 12, and the sealing ring is attached to the bottom surface of the base 13, so that the sealing space meeting the requirements of the semiconductor process is formed in the vertical furnace tube 12 by sealing between the furnace door 11 and the base 13 through the sealing ring, and the water cooling channel is filled with cooling water to cool the part of the furnace door 11 provided with the sealing ring, so that the sealing ring works in a tolerable temperature range.
However, since the water cooling channels are unevenly distributed, and the oven door 11 is at the very bottom of the process oven,
remote from the heat source, which results in the possibility of too low a temperature of the oven door 11, for example, in a Nitride (nitiride) process, when in a lower temperature stage, which results in, for example, ammonium chloride (NH), a process byproduct 4 Cl) may condense on the portions of the oven door 11 at too low a temperature to form particles, and when in a stage of high a temperature, the oven door 11 may have portions at too high a temperature, which may cause corrosion of the portions of the oven door 11 at too high a temperature to generate metal ions, and in, for example, a nitride process, there may be corrosive gases involved, which may cause accelerated corrosion of the portions of the oven door 11 at too high a temperature to generate metal ions, and both the byproduct condensed particles and the metal ions may cause contamination of wafers in the process, affecting the process results. In addition, because the sealing ring is in cold and hot alternate environment for a long time, the service life of the sealing ring is lower, the replacement frequency of the sealing ring is increased, and the utilization rate of the process furnace is influenced.
Disclosure of Invention
The invention aims at solving at least one of the technical problems in the prior art, and provides a furnace door of a semiconductor process furnace and the semiconductor process furnace, which can reduce the generation of condensation particles and metal ions of process byproducts, thereby improving the process result, prolonging the service life of parts and improving the utilization rate of the process furnace.
The invention provides a furnace door of a semiconductor process furnace, which comprises a furnace door body, a heating component and a detection component, wherein the furnace door body is used for sealing a furnace body of the semiconductor process furnace, air cooling channels are arranged in the furnace door body and are uniformly distributed in the furnace door body, the air cooling channels are used for introducing cooling gas with preset temperature, and the cooling gas comprises process byproducts which are gaseous at the preset temperature;
the detection assembly is used for detecting whether the gaseous process byproducts are condensed in the air-cooling channel;
the heating component is arranged on the furnace door body and is used for heating the furnace door body until the process byproducts are recovered to be in a gaseous state when the detection component detects that the gaseous process byproducts are condensed in the air cooling channel.
Optionally, the air cooling channels are uniformly distributed in the furnace door body in a spiral shape along the circumferential direction of the furnace door body.
Optionally, the furnace door body includes air-cooled disc and apron, the air-cooled disc deviates from the inside one side of furnace body has seted up the air-cooled recess, air-cooled recess evenly distributed is in the air-cooled disc, the apron lid is established the air-cooled disc deviates from the inside one side of furnace body, in order to cover the air-cooled recess forms the air-cooled passageway.
Optionally, the furnace door further comprises an air inlet connecting piece and an air outlet connecting piece, wherein the air inlet connecting piece is communicated with the air cooling channel and is used for being communicated with an air inlet pipe of cooling gas, and the air outlet connecting piece is communicated with the air cooling channel and is used for being communicated with an air outlet pipe of the cooling gas.
Optionally, the process byproduct is NH 4 Cl, the preset temperature is 150 ℃.
Optionally, the detection assembly includes a flow limiting component and a flow detection component, the flow limiting component is disposed in the air-cooling channel and is used for limiting the flow of the process byproducts condensed in the air-cooling channel, the flow detection component is used for detecting the flow of the air-cooling channel, and when the flow is detected to be lower than a preset threshold value, the gaseous process byproducts are determined to be condensed in the air-cooling channel.
Optionally, the flow limiting component includes a flow limiting body, the flow limiting body is fixedly arranged in the air cooling channel, and the contour of the flow limiting body is matched with the inner peripheral wall of the air cooling channel, a flow limiting hole is formed in the flow limiting body, and the flow limiting hole is used for limiting the flow of the process byproducts condensed in the air cooling channel.
Optionally, the aperture of the flow limiting hole ranges from 0.1mm to 1mm.
Optionally, the number of the flow limiting parts is multiple, and the multiple flow limiting parts are arranged at intervals along the spiral shape of the air cooling channel and are positioned in the same radial direction of the spiral air cooling channel.
Optionally, the air cooling dish orientation the inside one side of furnace body has seted up and has been annular seal groove, be provided with the sealing washer in the seal groove, the sealing washer be used for with the furnace body contact, with seal between the furnace body with the furnace gate.
The invention also provides a semiconductor process furnace, which comprises a furnace body and the furnace door of the semiconductor process furnace, wherein the furnace body is used for carrying out a semiconductor process, and the furnace door is used for sealing the furnace body.
The invention has the following beneficial effects:
the furnace door of the semiconductor process furnace provided by the invention can reduce the generation of metal ions by arranging the air cooling channel in the furnace door body and uniformly distributing the air cooling channel in the furnace door body, and can reduce the generation of process byproduct condensation particles on the furnace door body by introducing cooling gas with preset temperature into the air cooling channel when the semiconductor process is in a high temperature stage, thereby reducing the probability of high-temperature corrosion of the furnace door body by means of the cooling gas, and can reduce the generation of metal ions by arranging the heating component on the furnace door body, and because the cooling gas comprises a process byproduct which is in a gaseous state at the preset temperature, that is, the preset temperature of the cooling gas introduced into the air cooling channel is higher than the temperature of the process byproduct condensation, when the semiconductor process is in the high temperature stage, the temperature of the furnace door body is reduced to be lower than or equal to the temperature of the process byproduct condensation temperature due to the cooling gas, thereby reducing the generation of the process byproduct condensation particles on the furnace door body by means of the cooling gas, and can be prevented from being lower than or equal to the temperature of the process byproduct condensation particles on the furnace door body by means of the setting the detecting component, thereby reducing the generation of the process byproduct condensation particles on the furnace door body by means of the cooling gas in the low temperature when the semiconductor process is in the high temperature stage, therefore, the service life of the parts can be prolonged, and in conclusion, the furnace door of the semiconductor process furnace provided by the invention can reduce the generation of condensation particles and metal ions of process byproducts, so that the process result can be improved, the service life of the parts can be prolonged, and the utilization rate of the process furnace can be improved.
According to the semiconductor process furnace provided by the invention, the furnace body is sealed by the furnace door of the semiconductor process furnace, so that the generation of condensation particles and metal ions of process byproducts can be reduced, the process result is improved, the service life of parts can be prolonged, and the utilization rate of the process furnace is improved.
Drawings
FIG. 1 is a schematic view of a vertical process furnace according to the prior art;
fig. 2 is a schematic view of a structure of a furnace door of a semiconductor process furnace according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of a side view of a furnace door of a semiconductor processing furnace according to an embodiment of the present invention;
fig. 4 is a schematic bottom view of an air cooling tray of an oven door of a semiconductor process oven according to an embodiment of the present invention;
fig. 5 is a schematic structural view of an air cooling tray of an oven door of a semiconductor process oven according to an embodiment of the present invention;
fig. 6 is a schematic structural view of a flow restricting member of a door of a semiconductor process furnace according to an embodiment of the present invention;
reference numerals illustrate:
11-furnace door; 12-a vertical furnace tube; 13-a base; 14-a wafer boat; 2-furnace door; 21-a furnace door body; 211-an air-cooled disc; 212-cover plate; 22-heating means; 23-an air cooling channel; 24-air cooling grooves; 25-an air intake connection; 26-exhaust connection; 27-a flow restricting member; 271-a current-limiting body; 272-restricting orifice; 28-sealing ring.
Detailed Description
In order to enable those skilled in the art to better understand the technical scheme of the present invention, the furnace door of the semiconductor process furnace and the semiconductor process furnace provided by the present invention are described in detail below with reference to the accompanying drawings.
As shown in fig. 2 and 3, an embodiment of the present invention provides a furnace door 2 of a semiconductor process furnace, the furnace door 2 includes a furnace door body 21, a heating part 22 (Cap Heater) and a detection assembly, the furnace door body 21 is used for sealing a furnace body of the semiconductor process furnace, air cooling channels 23 are arranged in the furnace door body 21, the air cooling channels 23 are uniformly distributed in the furnace door body 21, the air cooling channels 23 are used for supplying cooling gas with preset temperature, and the cooling gas includes process byproducts which are gaseous at the preset temperature; the detection assembly is used to detect whether gaseous process byproducts condense in the air-cooled channel 23; the heating part 22 is provided on the oven door body 21 for heating the oven door body 21 until the process by-product is restored to the gaseous state when the detection assembly detects that the gaseous process by-product is condensed in the air cooling passage 23.
According to the furnace door 2 of the semiconductor process furnace provided by the embodiment of the invention, the air cooling channels 23 are arranged in the furnace door body 21, and the air cooling channels 23 are uniformly distributed in the furnace door body 21, so that when the semiconductor process is in a high-temperature stage, the furnace door body 21 can be uniformly cooled by means of the cooling gas, the probability of corrosion of the furnace door body 21 at high temperature is reduced, thereby reducing the generation of metal ions, and because the cooling gas comprises process byproducts which are gaseous at the preset temperature,
that is, the preset temperature of the cooling gas introduced into the air cooling passage 23 is higher than the temperature at which the process by-products are condensed, so that when the semiconductor process is in a high temperature stage, the temperature of the furnace door body 21 can be prevented from being reduced to be lower than or equal to the temperature at which the process by-products are condensed due to the cooling of the cooling gas, thereby reducing the generation of process by-product condensation particles on the furnace door body 21, and by arranging the detection assembly to detect whether the gaseous process by-products introduced into the air cooling passage 23 are condensed in the air cooling passage 23, and by arranging the heating part 22 on the furnace door body 21, when the semiconductor process is in a low temperature stage, the temperature of the furnace door body 21 is reduced to be lower than or equal to the temperature at which the process by-products are condensed due to the cooling of the cooling gas, the heating part 22 can be used for heating the furnace door body 21, so that the temperature of the furnace door body 21 is maintained to be higher than the temperature at which the process by-products are condensed, thereby reducing the generation of process by-product condensation particles on the furnace door body 21, and the service life of the furnace door body 21 can be always in a stable temperature, thereby reducing the service life of the metal by-products due to the temperature change of the furnace door body 21, thereby improving the service life of the metal by-products, and prolonging the service life of the metal by-products, and the invention.
Taking Nitride (Nitri) low pressure chemical vapor deposition process as an example, the process produces by-product of ammonium chloride (NH) 4 Cl), cooling gas with a preset temperature can be always introduced into the air cooling channel 23 of the furnace door body 21 in the process, the cooling gas can be ammonium chloride gas with a preset temperature of 150 ℃, when the process is in a high-temperature stage (for example, the temperature in a furnace body is 700 ℃ to 800 ℃) and the air cooling channel 23 is uniformly distributed in the furnace door body 21, the cooling gas can uniformly cool the furnace door body 21, and the temperature of the furnace door body 21 can be always maintained above 150 ℃ because the cooling gas is ammonium chloride gas with a temperature of 150 ℃, so that on one hand, the probability that the furnace door body 21 is corroded by high temperature can be reduced, the generation of metal ions is reduced, and on the other hand, the furnace door body 21 can be prevented from being cooled to be lower than or equal to 150 ℃, so that the temperature of the furnace door body 21 can be maintained to be higher than 150 ℃, and the generation of ammonium chloride condensation particles on the furnace door body 21 can be reduced. When the process is in a low temperature stage (for example, the temperature in the furnace body is 300 ℃ to 400 ℃) because of cooling gas to the furnace doorThe cooling of the body 21 and the heat dissipation of the door body 21 to the outside, and since the side of the door body 21 facing the inside of the furnace body is away from the inside of the furnace body with respect to the side of the door body 21 facing the inside of the furnace body, at this time, the temperature of the side of the door body 21 facing the inside of the furnace body may be higher than 150 ℃, and the temperature of the door body 23 may be lower than or equal to 150 ℃, the ammonium chloride gas introduced into the door body 23 may be condensed in the door body 23, when the detection unit detects that the ammonium chloride gas introduced into the door body 23 condenses in the door body 23, the heating unit 22 may heat the door body 21, and when the ammonium chloride is restored to a gaseous state, i.e., no longer condenses in the door body 23, the heating unit 22 stops heating the door body 21, and at this time, since the ammonium chloride is restored to a gaseous state, the ammonium chloride gas in the door body 23 is at least 150 ℃, i.e., the door body 21 is heated to a temperature higher than 150 ℃, thereby enabling the reduction of the generation of condensed particles of ammonium chloride on the door body 21. In addition, since the temperature of the furnace door body 21 can be in a stable state in the process of carrying out the process, the problem that the service lives of parts on the furnace door 2 are lower due to large temperature cold-hot variation of the furnace door body 21 can be avoided, and the service lives of the parts can be prolonged. In summary, the furnace door 2 of the semiconductor process furnace provided by the embodiment of the invention can reduce the generation of condensation particles and metal ions of process byproducts, thereby improving the process result, prolonging the service life of parts and improving the utilization rate of the process furnace.
In a preferred embodiment of the present invention, the air cooling channels 23 may be uniformly distributed in the oven door body 21 in a spiral shape along the circumferential direction of the oven door body 21.
This makes it possible to uniformly distribute the air cooling passages 23 in the door body 21, so that the cooling air introduced into the air cooling passages 23 can uniformly cool the door body 21.
As shown in fig. 2 to 4, in a preferred embodiment of the present invention, the oven door body 21 may include an air cooling tray 211 and a cover plate 212, wherein an air cooling groove 24 is formed on a surface of the air cooling tray 211 facing away from the interior of the oven body, the air cooling grooves 24 are uniformly distributed in the air cooling tray 211, and the cover plate 212 is covered on a surface of the air cooling tray 211 facing away from the interior of the oven body to cover the air cooling groove 24 to form an air cooling channel 23.
That is, the air cooling channel 23 is formed by forming an air cooling groove 24 on the air cooling plate 211, and then covering the air cooling groove 24 by covering the cover plate 212 on the surface of the air cooling plate 211 facing away from the furnace body.
As shown in fig. 4, alternatively, the air cooling grooves 24 may be uniformly formed on a surface of the air cooling plate 211 facing away from the interior of the furnace body in a spiral shape along the circumferential direction of the air cooling plate 211.
Thus, when the cover plate 212 is covered on the surface of the air cooling disc 211 facing away from the furnace body and covers the air cooling groove 24, the air cooling channels 23 can be uniformly distributed in the furnace door body 21 in a spiral manner along the circumferential direction of the furnace door body 21.
Alternatively, the bottom of the air-cooled groove 24 may be more than 10mm from the side of the air-cooled panel 211 facing away from the interior of the furnace. This may facilitate machining of the air-cooled groove 24.
In practical applications, the surface of the air cooling plate 211 facing the interior of the furnace body may be in contact with the furnace body of the semiconductor process furnace to seal the furnace body of the semiconductor process furnace, and at this time, the cover plate 212 covers the surface of the air cooling plate 211 facing away from the interior of the furnace body, that is, the cover plate 212 is located outside the furnace body.
As shown in fig. 2 to 4, in a preferred embodiment of the present invention, the oven door 2 may further comprise an air inlet connector 25 and an air outlet connector 26, wherein the air inlet connector 25 is in communication with the air cooling channel 23 and is adapted to be in communication with an air inlet pipe (not shown) for cooling air, and the air outlet connector 26 is in communication with the air cooling channel 23 and is adapted to be in communication with an air outlet pipe (not shown) for cooling air.
In practical application, the air inlet pipe can be communicated with an air source for providing cooling air, the cooling air provided by the air source enters the air inlet connecting piece 25 through the air inlet pipe and enters the air cooling channel 23 after passing through the air inlet connecting piece 25, and the cooling air enters the exhaust connecting piece 26 after passing through the air cooling channel 23 and enters the exhaust pipe after passing through the exhaust connecting piece 26 and is exhausted from the exhaust pipe.
As shown in fig. 2 to 4, alternatively, when the air cooling passages 23 are uniformly distributed in the door body 21 in a spiral shape along the circumferential direction of the door body 21, the air inlet connection 25 may be in communication with one end of the air cooling passage 23 near the center of the door body 21, and the air outlet connection 26 may be in communication with one end of the air cooling passage 23 near the edge of the door body 21, so that the cooling air enters the air cooling passage 23 from the center of the door body 21, flows through the entire air cooling passage 23 in a spiral shape of the air cooling passage 23, and is discharged from the edge of the door body 21.
Alternatively, the cover plate 212 may be provided with an air inlet hole, which communicates with the air cooling channel 23, and the air inlet connector 25 is connected to the cover plate 212 and communicates with the air inlet hole to communicate with the air cooling channel 23 through the air inlet hole.
Optionally, the cover 212 may be provided with an exhaust hole, which communicates with the air cooling channel 23, and the exhaust connector 26 is connected to the cover 212 and communicates with the exhaust hole to communicate with the air cooling channel 23 through the exhaust hole.
Alternatively, the air intake connector 25 may comprise an air intake fitting.
Alternatively, the exhaust connection 26 may include an exhaust fitting.
In a preferred embodiment of the invention, the process byproduct may be NH 4 Cl, the preset temperature may be 150 ℃.
This design is due to the fact that condensation of ammonium chloride to form particles may occur below 150 c, whereas ammonium chloride is gaseous at or above 150 c, whereas by making the ammonium chloride gas 150 c, the oven door body 21 may be cooled as much as possible.
As shown in fig. 3 and 4, in a preferred embodiment of the present invention, the detecting assembly may include a flow restricting part 27 and a flow detecting part, the flow restricting part 27 is provided in the air cooling passage 23 to restrict the flow of the process byproduct condensed in the air cooling passage 23, and the flow detecting part is used to detect the flow of the air cooling passage 23 and determine that the gaseous process byproduct is condensed in the air cooling passage 23 when the detected flow is lower than a preset threshold.
By providing the flow restricting member 27 in the air cooling passage 23 and detecting the flow rate of the air cooling passage 23 by the flow detecting member, when the flow detecting member detects that the gaseous process by-product condenses in the air cooling passage 23, the flow of the gaseous process by-product condensed in the air cooling passage 23 can be restricted by the flow restricting member 27 to decrease the flow rate of the gaseous process by-product in the air cooling passage 23, and when the flow detecting member detects that the flow rate of the gaseous process by-product in the air cooling passage 23 decreases below the preset threshold, the heating member 22 can heat the door body 21, and when the flow detecting member detects that the flow rate of the gaseous process by-product in the air cooling passage 23 is restored to the previous flow rate, it can be said that the gaseous process by-product is restored to the gaseous state, i.e., the gaseous process by-product is not condensed in the air cooling passage 23, at this time, the heating member 22 can stop heating the door body 21.
In practical applications, the preset threshold may be 50% of the initial flow, after the flow detecting component detects that the flow of the gaseous process byproducts in the air-cooling channel 23 is reduced to 50% of the initial flow, the flow detecting component may feed back to the heating component 22 to heat the oven door body 21 through the heating component 22, at this time, the condensed process byproducts in the air-cooling channel 23 may be changed into the gaseous state again due to heating by the heating component 22, after that, when the flow detecting component detects that the flow of the gaseous process byproducts in the air-cooling channel 23 reaches 90% of the initial flow, the flow detecting component may feed back to the heating component 22 to reduce the heating power of the heating component 22, and when the flow detecting component detects that the flow of the gaseous process byproducts in the air-cooling channel 23 reaches the initial flow (i.e. reaches 100% of the initial flow), the flow detecting component may feed back to the heating component 22 to stop heating the oven door body 21.
Alternatively, a flow rate detecting means may be provided at the exhaust port of the air cooling passage 23 to detect the flow rate of the gaseous process by-product in the air cooling passage 23 by detecting the flow rate of the exhaust gas of the air cooling passage 23.
As shown in fig. 6, in a preferred embodiment of the present invention, the flow limiting member 27 may include a flow limiting body 271, the flow limiting body 271 is fixedly disposed in the air cooling channel 23, and the flow limiting body 271 has a contour matching with an inner peripheral wall of the air cooling channel 23, and a flow limiting hole 272 is formed in the flow limiting body 271, and the flow limiting hole 272 is used for limiting the flow of the process byproducts condensed in the air cooling channel 23.
When the gaseous process byproducts flow in the gas-cooling passage 23 in a gaseous form, the gaseous process byproducts can flow through the flow restricting holes 272 formed in the flow restricting body 271, and when the gaseous process byproducts condense in the gas-cooling passage 23 to form particles, the particles formed by the condensation of the gaseous process byproducts in the gas-cooling passage 23 can block the flow restricting holes 272 formed in the flow restricting body 271, so that the gaseous process byproducts cannot smoothly flow through the flow restricting holes 272 in the flow restricting body 271, thereby restricting the flow of the process byproducts condensed in the gas-cooling passage 23, and changing the flow rate of the gaseous process byproducts in the gas-cooling passage 23.
In a preferred embodiment of the present invention, the aperture of the restricted orifice 272 may range from 0.1mm to 1mm.
As shown in fig. 3 and 4, in a preferred embodiment of the present invention, the number of the flow restricting members 27 may be plural, and the plural flow restricting members 27 are disposed at intervals along the spiral shape of the air cooling passage 23 and are located in the same radial direction of the spiral shape of the air cooling passage 23.
By arranging the plurality of flow restricting members 27 at intervals along the spiral shape of the air cooling passage 23 and making the plurality of flow restricting members 27 in the same radial direction of the spiral shape of the air cooling passage 23, the flow of the process by-products condensed in the air cooling passage 23 can be restricted by the plurality of flow restricting members 27 in the air cooling passage 23, thereby improving the stability of flow restriction, improving the stability of use, and being able to improve the speed of flow restriction feedback, and improving the response speed of the heating member 22.
As shown in fig. 5, in a preferred embodiment of the present invention, a sealing groove with a ring shape may be formed on a surface of the air cooling plate 211 facing the inside of the furnace body, and a sealing ring 28 is disposed in the sealing groove, where the sealing ring 28 is used for contacting the furnace body to seal between the furnace body and the furnace door 2.
Taking a nitride low-pressure chemical vapor deposition process as an example, the tolerance temperature of the sealing ring 28 is 280 ℃, and the ammonium chloride gas at 150 ℃ introduced into the air cooling channel 23 can cool the temperature of the furnace door body 21 to below 270 ℃, so that the service life of the sealing ring 28 is prevented from being reduced due to the high temperature, and the furnace door 2 of the semiconductor process furnace provided by the embodiment of the invention can enable the temperature of the furnace door body 21 to be in a stable state in the process, thereby prolonging the service life of the sealing ring 28, reducing the replacement frequency of the sealing ring 28 and further improving the utilization rate of the semiconductor process furnace.
The embodiment of the invention also provides a semiconductor process furnace, which comprises a furnace body and the furnace door 2 of the semiconductor process furnace provided by the embodiment of the invention, wherein the furnace body is used for carrying out a semiconductor process, and the furnace door 2 is used for sealing the furnace body.
The furnace body of the semiconductor process furnace provided by the embodiment of the invention is sealed by the furnace door 2 of the semiconductor process furnace, so that the generation of condensation particles and metal ions of process byproducts can be reduced, the process result is improved, the service life of parts can be prolonged, and the utilization rate of the process furnace is improved.
In summary, the furnace door 2 of the semiconductor process furnace and the semiconductor process furnace provided by the embodiments of the invention can reduce the generation of condensation particles and metal ions of process byproducts, thereby improving the process result, prolonging the service life of parts and improving the utilization rate of the process furnace.
It is to be understood that the above embodiments are merely illustrative of the application of the principles of the present invention, but not in limitation thereof. Various modifications and improvements may be made by those skilled in the art without departing from the spirit and substance of the invention, and are also considered to be within the scope of the invention.
Claims (11)
1. The furnace door of the semiconductor process furnace is characterized by comprising a furnace door body, a heating component and a detection component, wherein the furnace door body is used for sealing a furnace body of the semiconductor process furnace, air cooling channels are arranged in the furnace door body and are uniformly distributed in the furnace door body, the air cooling channels are used for introducing cooling gas with preset temperature, and the cooling gas comprises process byproducts which are gaseous at the preset temperature;
the detection assembly is used for detecting whether the gaseous process byproducts are condensed in the air-cooling channel;
the heating component is arranged on the furnace door body and is used for heating the furnace door body until the process byproducts are recovered to be in a gaseous state when the detection component detects that the gaseous process byproducts are condensed in the air cooling channel.
2. The oven door of the semiconductor process oven according to claim 1, characterized in that the air cooling channels are uniformly distributed in the oven door body in a spiral shape along the circumferential direction of the oven door body.
3. The furnace door of the semiconductor process furnace according to claim 1, wherein the furnace door body comprises an air cooling disc and a cover plate, wherein an air cooling groove is formed in one surface of the air cooling disc, which is away from the inside of the furnace body, the air cooling grooves are uniformly distributed in the air cooling disc, and the cover plate is arranged on one surface of the air cooling disc, which is away from the inside of the furnace body, so as to cover the air cooling grooves to form the air cooling channel.
4. The oven door of the semiconductor process oven according to claim 1, further comprising an air inlet connection in communication with the air cooling channel and for communication with an air inlet pipe of the cooling gas, and an air outlet connection in communication with the air cooling channel and for communication with an air outlet pipe of the cooling gas.
5. The oven door of a semiconductor process oven according to claim 1, wherein the process byproduct is NH 4 Cl, the preset temperature is 150 ℃.
6. The oven door of a semiconductor process oven according to claim 2, wherein the detection assembly comprises a flow restriction member disposed in the air cooling channel for restricting flow of the process byproducts condensed in the air cooling channel and a flow detection member for detecting a flow rate of the air cooling channel, and determining that the gaseous process byproducts condense in the air cooling channel when the flow rate is detected to be lower than a preset threshold.
7. The oven door of the semiconductor process oven according to claim 6, wherein the flow restricting member comprises a flow restricting body fixedly disposed in the air cooling passage, and wherein the flow restricting body has a contour matching an inner peripheral wall of the air cooling passage, and wherein the flow restricting body is provided with a flow restricting hole for restricting the flow of the process byproduct condensed in the air cooling passage.
8. The oven door of the semiconductor process oven according to claim 7, wherein the aperture of the flow restricting orifice ranges from 0.1mm to 1mm.
9. The oven door of the semiconductor process oven according to claim 6, wherein the number of the flow restricting members is plural, and the plural flow restricting members are arranged at intervals along the spiral shape of the air cooling passage and are located in the same radial direction of the spiral shape of the air cooling passage.
10. The furnace door of the semiconductor process furnace according to claim 3, wherein an annular sealing groove is formed in one surface of the air cooling disc facing the inside of the furnace body, and a sealing ring is arranged in the sealing groove and is used for being in contact with the furnace body to seal between the furnace body and the furnace door.
11. A semiconductor process furnace comprising a furnace body for performing a semiconductor process and a furnace door of the semiconductor process furnace as claimed in any one of claims 1 to 10 for sealing the furnace body.
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