CN114774861A - Method for controlling particles on film-coated surface of wafer - Google Patents
Method for controlling particles on film-coated surface of wafer Download PDFInfo
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- CN114774861A CN114774861A CN202210454931.3A CN202210454931A CN114774861A CN 114774861 A CN114774861 A CN 114774861A CN 202210454931 A CN202210454931 A CN 202210454931A CN 114774861 A CN114774861 A CN 114774861A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/28—Vacuum evaporation by wave energy or particle radiation
- C23C14/30—Vacuum evaporation by wave energy or particle radiation by electron bombardment
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/02—Pretreatment of the material to be coated
- C23C14/021—Cleaning or etching treatments
- C23C14/022—Cleaning or etching treatments by means of bombardment with energetic particles or radiation
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0623—Sulfides, selenides or tellurides
- C23C14/0629—Sulfides, selenides or tellurides of zinc, cadmium or mercury
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
- C23C14/165—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon by cathodic sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5806—Thermal treatment
Abstract
The invention discloses a method for controlling particles on the coating surface of a wafer, which comprises the following steps: step (1), cleaning a silicon wafer by adopting an ultrasonic water washing mode; scanning the pre-plated surface of the silicon wafer by adopting a surface particle scanner; step (3), preparing for feeding; step (4), placing the silicon wafer on a sample rack in a vacuum chamber of a coating machine to vacuumize the substrate; step (5), vacuumizing to 3.0 x 10 < -3 > Pa, and performing premelting on the two materials; after the materials are melted, bombarding the surface to be plated of the silicon wafer by using high-energy argon ions; step (7), plating a germanium material 1310.98-1311nm on the downward surface of the silicon wafer, and plating a zinc sulfide material 1167.47-1168 nm; and (8) annealing the optical filter after the film layer is plated. The invention slows down the loss of the temperature of the germanium material by using the graphite heat-insulating backing ring, so that the temperature of the germanium material is kept in a higher and more stable state, the splashing of the germanium material is obviously reduced, and the surface quality of the product is greatly improved.
Description
Technical Field
The invention relates to the technical field of wafer coating, in particular to a method for controlling particles on the coating surface of a wafer.
Background
The vacuum germanium plating mainly comprises two modes of resistance thermal evaporation or electron beam evaporation, wherein the former generally uses a graphite evaporation boat to evaporate germanium, the latter generally selects an oxygen-free copper-lined crucible or a graphite-lined crucible to be placed in a water-cooled crucible for evaporation, and the two evaporation modes have the problem of material sputtering caused by uneven temperature distribution after the material is melted;
the infrared wafer level packaging window is obtained by bonding and cutting a wafer after being coated with a film and a chip, and along with the wider application and smaller size of an infrared lens, in order to obtain a high-quality image, the surface quality of a wafer coating film is improved to a new height, and meanwhile, a higher requirement is provided for controlling the granularity of the coating surface.
Disclosure of Invention
The invention aims to provide a method for controlling the particles on the coating surface of a wafer, which is used for solving the problems in the background technology so as to improve the surface quality.
In order to achieve the purpose, the invention provides the following technical scheme: a method for controlling particles on the surface of a wafer coating film comprises the following steps:
cleaning a silicon wafer by adopting an ultrasonic water washing mode, and drying a silicon sample by using a clean oven;
scanning the pre-plated surface of the silicon wafer by using a surface particle scanner;
step (3), preparing for feeding, wherein a coating material is germanium and zinc sulfide, the germanium material is placed in a graphite lining crucible, a graphite heat insulation backing ring is added at the bottom of the lining crucible, and the germanium material is evaporated by using an electron beam mode;
step (4), placing the silicon wafer on a sample rack in a vacuum chamber of a coating machine to vacuumize the substrate, baking and heating, wherein the baking temperature is set to 145-;
step (5), vacuumizing to 3.0 x 10 < -3 > Pa, and performing premelting on the two materials;
after the materials are melted, bombarding the surface to be plated of the silicon wafer by using high-energy argon ions;
step (7), plating a germanium material 1310.98-1311nm on the downward surface of the silicon wafer, and plating a zinc sulfide material 1167.47-1168 nm;
step (8), after the film layer is plated, annealing the optical filter at 145-155 ℃ for 30-35 minutes, and cooling to 55-60 ℃ to release the part;
and (9) scanning the film coating surface of the silicon wafer by adopting a surface particle scanner.
Preferably, in the step (3), the zinc sulfide is evaporated by a molybdenum boat cover.
Preferably, in step (6), the parameters of bombardment are: the bombardment time is 10min-12min, the bombardment parameters are anode voltage of 180V and anode current of 4-6A, and cathode current of 21-23A.
Preferably, in step (7), the germanium evaporation rate is 3-4A/S, and the zinc sulfide evaporation rate is 8-9A/S.
Preferably, in the step (9), the cooling rate is 1-2 ℃/min.
The method for controlling the particles on the film coating surface of the wafer has the beneficial effects that:
the invention slows down the loss of the temperature of the germanium material by using the graphite heat-insulating backing ring, so that the temperature of the germanium material is kept in a higher and more stable state, the splashing of the germanium material is obviously reduced, and the surface quality of the product is greatly improved.
Drawings
FIG. 1 is a view showing the structure of a graphite crucible and a heat insulating grommet according to the present invention;
FIG. 2 is a scanned view of a coating film before improvement of the crucible of the present invention;
FIG. 3 is a scanned view of a silicon substrate of the present invention after cleaning;
FIG. 4 is a scanned view of the improved coated film of the crucible of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be obtained by a person skilled in the art without making any creative effort based on the embodiments in the present invention, belong to the protection scope of the present invention.
Example 1, please refer to fig. 1-4, the present invention provides a technical solution: a method for controlling the particles on the film-coated surface of a wafer selects 8-inch double-polished silicon wafers for improvement and verification, and the large specification is favorable for problem improvement and judgment;
the method comprises the following steps:
cleaning an 8-inch silicon wafer by adopting an ultrasonic water washing mode, and drying a silicon sample by using a 10-grade clean oven;
scanning the pre-plated surface of the silicon wafer by using a surface particle scanner;
step (3) preparing feeding, wherein a coating material is germanium and zinc sulfide, the germanium material is placed in a graphite lining crucible, a graphite heat-insulating backing ring is added at the bottom of the lining crucible, the germanium material is evaporated by using an electron beam mode, the graphite lining crucible is influenced by the graphite heat-insulating backing ring, the heat loss is controlled, the purpose of germanium material sputtering is further improved, and the zinc sulfide is evaporated by adopting a molybdenum boat capping mode;
step (4), placing the silicon wafer on a sample rack in a vacuum chamber of a coating machine, vacuumizing the substrate, baking and heating, wherein the baking temperature is set to 145 ℃, and the baking time is 100 min;
step (5), vacuumizing to 3.0 x 10 < -3 > Pa, and performing premelting on the two materials;
after the materials are melted, bombarding the surface to be plated of the silicon wafer by using high-energy argon ions for 10min, wherein the bombardment parameters are anode voltage of 180V, anode current of 4A and cathode current of 21A;
step (7), plating a germanium material 1310.98nm on the downward surface of the silicon wafer, plating a zinc sulfide material 1167.47nm, wherein the germanium evaporation rate is 3A/S, and the zinc sulfide evaporation rate is 8A/S;
step (8), after the film layer is plated, annealing the optical filter, wherein the annealing temperature is 145 ℃, the constant temperature time is 30 minutes, the cooling speed is 1 ℃/min, and cooling is carried out until the temperature is 55 ℃ to deflate and take out the optical filter;
and (9) scanning the film coating surface of the silicon wafer by adopting a surface particle scanner.
Embodiment 2, please refer to fig. 1-4, the present invention provides another technical solution: a method for controlling the particles on the film-coated surface of a wafer selects 8-inch double-polished silicon wafers for improvement and verification, and the large specification is favorable for problem improvement and judgment;
the method comprises the following steps:
cleaning an 8-inch silicon wafer by adopting an ultrasonic water washing mode, and drying a silicon sample by using a 10-grade clean oven;
scanning the pre-plated surface of the silicon wafer by adopting a surface particle scanner;
step (3) preparing feeding, wherein a coating material is germanium and zinc sulfide, the germanium material is placed in a graphite lining crucible, a graphite heat-insulating backing ring is added at the bottom of the lining crucible, the germanium material is evaporated by using an electron beam mode, the graphite lining crucible is influenced by the graphite heat-insulating backing ring, the heat loss is controlled, the purpose of germanium material sputtering is further improved, and the zinc sulfide is evaporated by adopting a molybdenum boat capping mode;
step (4), placing the silicon wafer on a sample rack in a vacuum chamber of a coating machine, vacuumizing the substrate, baking and heating, wherein the baking temperature is set to 155 ℃, and the baking time is 130 min;
step (5), vacuumizing to 3.0 x 10 < -3 > Pa, and performing premelting on the two materials;
after the materials are melted, bombarding the surface to be plated of the silicon wafer by using high-energy argon ions for 12min, wherein the bombardment parameters are anode voltage of 180V, anode current of 6A and cathode current of 23A;
step (7), plating a germanium material 1311nm, a zinc sulfide material 1168nm, a germanium evaporation rate of 4A/S and a zinc sulfide evaporation rate of 9A/S on the downward surface of the silicon wafer;
step (8), after the film layer is plated, annealing the optical filter, cooling to 60 ℃, discharging gas and taking out the optical filter, wherein the annealing temperature is 155 ℃, the constant temperature time is 35 minutes, and the cooling speed is 2 ℃/min;
and (9) scanning the film coating surface of the silicon wafer by adopting a surface particle scanner.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that various changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (5)
1. A method for controlling particles on the film coating surface of a wafer is characterized by comprising the following steps:
step (1), cleaning a silicon wafer by adopting an ultrasonic water washing mode, and drying a silicon sample by using a clean oven;
scanning the pre-plated surface of the silicon wafer by adopting a surface particle scanner;
step (3) preparing for feeding, wherein a coating material is germanium and zinc sulfide, the germanium material is placed in a graphite lining crucible, a graphite heat-insulating backing ring is added to the bottom of the lining crucible, and the germanium material is evaporated in an electron beam mode;
step (4), placing the silicon wafer on a sample rack in a vacuum chamber of a coating machine to vacuumize the substrate, baking and heating, wherein the baking temperature is set to 145-;
step (5), vacuumizing to 3.0 x 10 < -3 > Pa, and performing premelting on the two materials;
after the materials are melted, bombarding the surface to be plated of the silicon wafer by using high-energy argon ions;
step (7), plating a germanium material 1310.98-1311nm on the downward surface of the silicon wafer, and plating a zinc sulfide material 1167.47-1168 nm;
step (8), after the film layer is plated, annealing the optical filter at 145-155 ℃ for 30-35 minutes, and cooling to 55-60 ℃ to release the part;
and (9) scanning the film coating surface of the silicon wafer by adopting a surface particle scanner.
2. The method as set forth in claim 1, wherein the method comprises the steps of: in the step (3), the zinc sulfide is evaporated by adopting a molybdenum boat capping mode.
3. The method as set forth in claim 1, wherein the method comprises the steps of: in the step (6), the bombardment parameters are as follows: the bombardment time is 10min-12min, the bombardment parameters are anode voltage of 180V and anode current of 4-6A, and cathode current of 21-23A.
4. The method as claimed in claim 1, wherein the method comprises the following steps: in the step (7), the evaporation rate of germanium is 3-4A/S, and the evaporation rate of zinc sulfide is 8-9A/S.
5. The method as claimed in claim 1, wherein the method comprises the following steps: in the step (9), the cooling speed is 1-2 ℃/min.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210454931.3A CN114774861A (en) | 2022-04-26 | 2022-04-26 | Method for controlling particles on film-coated surface of wafer |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210454931.3A CN114774861A (en) | 2022-04-26 | 2022-04-26 | Method for controlling particles on film-coated surface of wafer |
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| CN114774861A true CN114774861A (en) | 2022-07-22 |
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| CN202210454931.3A Pending CN114774861A (en) | 2022-04-26 | 2022-04-26 | Method for controlling particles on film-coated surface of wafer |
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Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003293127A (en) * | 2002-04-08 | 2003-10-15 | Kojundo Chem Lab Co Ltd | Sputtering target material, and vapor deposition material and manufacturing method therefor |
| WO2007081298A1 (en) * | 2006-01-13 | 2007-07-19 | State Enterprise 'international Center For Electron Beam Technologies Of E.O. Paton Electric Welding Institute Of National Academy Of Sciences Of Ukraine' | Method for producing a carbon-containing material by carbon electron-beam vaporisation in a vacuum and a subsequent condensation thereof on a substrate and a device for carrying out said method |
| CN102942209A (en) * | 2012-11-07 | 2013-02-27 | 上海大学 | Method for preparing one-dimensional nanostructure zinc oxides through changing tin doping ratio |
| CN103762257A (en) * | 2014-01-17 | 2014-04-30 | 华东师范大学 | Method for manufacturing copper-zinc-tin-sulfide absorbing layer thin film and copper-zinc-tin-sulfide solar cell |
| CN109103088A (en) * | 2018-08-30 | 2018-12-28 | 成都海威华芯科技有限公司 | A kind of evaporation coating method of metal ohmic contact germanium and its application |
| CN211199397U (en) * | 2019-09-26 | 2020-08-07 | 江西展宇新能源股份有限公司 | Tubular coating graphite boat, tubular heating furnace and solar cell |
| CN113652650A (en) * | 2021-08-20 | 2021-11-16 | 淮安澳洋顺昌光电技术有限公司 | Electron beam evaporation gold plating method for reducing gold film surface particles |
| CN215896337U (en) * | 2021-09-09 | 2022-02-22 | 盱眙新远光学科技有限公司 | Graphite boat with evaporation holes |
| CN114325911A (en) * | 2021-12-31 | 2022-04-12 | 苏州厚朴传感科技有限公司 | Intermediate infrared double-color optical filter and preparation method thereof |
-
2022
- 2022-04-26 CN CN202210454931.3A patent/CN114774861A/en active Pending
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003293127A (en) * | 2002-04-08 | 2003-10-15 | Kojundo Chem Lab Co Ltd | Sputtering target material, and vapor deposition material and manufacturing method therefor |
| WO2007081298A1 (en) * | 2006-01-13 | 2007-07-19 | State Enterprise 'international Center For Electron Beam Technologies Of E.O. Paton Electric Welding Institute Of National Academy Of Sciences Of Ukraine' | Method for producing a carbon-containing material by carbon electron-beam vaporisation in a vacuum and a subsequent condensation thereof on a substrate and a device for carrying out said method |
| CN102942209A (en) * | 2012-11-07 | 2013-02-27 | 上海大学 | Method for preparing one-dimensional nanostructure zinc oxides through changing tin doping ratio |
| CN103762257A (en) * | 2014-01-17 | 2014-04-30 | 华东师范大学 | Method for manufacturing copper-zinc-tin-sulfide absorbing layer thin film and copper-zinc-tin-sulfide solar cell |
| CN109103088A (en) * | 2018-08-30 | 2018-12-28 | 成都海威华芯科技有限公司 | A kind of evaporation coating method of metal ohmic contact germanium and its application |
| CN211199397U (en) * | 2019-09-26 | 2020-08-07 | 江西展宇新能源股份有限公司 | Tubular coating graphite boat, tubular heating furnace and solar cell |
| CN113652650A (en) * | 2021-08-20 | 2021-11-16 | 淮安澳洋顺昌光电技术有限公司 | Electron beam evaporation gold plating method for reducing gold film surface particles |
| CN215896337U (en) * | 2021-09-09 | 2022-02-22 | 盱眙新远光学科技有限公司 | Graphite boat with evaporation holes |
| CN114325911A (en) * | 2021-12-31 | 2022-04-12 | 苏州厚朴传感科技有限公司 | Intermediate infrared double-color optical filter and preparation method thereof |
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