CN1147668A - Magnetoresistive magnetic head - Google Patents
Magnetoresistive magnetic head Download PDFInfo
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- CN1147668A CN1147668A CN96109280A CN96109280A CN1147668A CN 1147668 A CN1147668 A CN 1147668A CN 96109280 A CN96109280 A CN 96109280A CN 96109280 A CN96109280 A CN 96109280A CN 1147668 A CN1147668 A CN 1147668A
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- magnetoresistive
- element assembly
- magnetoresistive element
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
Abstract
The invention relates to a magnetoresistive head, which on a chip comprises a pair of upper and lower magnetic shield layers, a reluctance component part and a pair of electrodes. The electrode is used for the reading of the current flowing through the reluctance component part and the testing of the voltage change of the reluctance component part. Between the electrodes and the magnetic shield layer or between two electrodes, a capacitor from 5 microfarads to 100 microfarads is formed. Or the resistance that the value is greater than that of the reluctance component part but not larger than that of 1000 times of the reluctance component parts is formed. Between the two electrodes, a two-way diode can be formed in which the threshold voltage is greater or equal to 0.5 volts but less or equal to 60 volts. Therefore, the damage of the reluctance component part due to a sudden implementation of a electrostatic voltage between the two electrodes is prevented.
Description
The present invention relates to a kind of magnetic head that is applied in disc driver and so on.Exactly, the present invention relates to a kind of read-only type magnetoresistive magnetic head that is used for reappearing the signal that is recorded in magnetic recording medium that utilizes magnetoresistance.
The read-only type magnetoresistive magnetic head that the magnetoresistance of a kind of utilization in ferromagnetic material is used for reappearing the signal that writes down at magnetic recording medium comprises: at least one pair of magnetic masking layer; One gives the magnetoresistive element assembly, this assembly comprises: be used to apply horizontal magnetic domain control device and some electrodes of asking the soft magnetism biasing thin layer of bias magnetic field and being used to be controlled at an on-chip domain structure, these electrodes are used to make read current to flow through magnetoresistive element assembly and the signal voltage that detects on the present magnetoresistive element assembly, and are disclosed as the Jap.P. open file at Sho62-40610 number.
On the other hand, disclose a kind of magnetoresistive magnetic head in Sho61-77114 number Jap.P. open file, in its ground structure, each magnetic masking layer is connected to each other, and makes them have identical current potential in such a way, so that prevent static discharge.
In addition, disclose a kind of holding circuit of magnetoresistive element in Hei2-94103 Jap.P. open file, it has a feedback assembly, is used to detect the intermediate potential of magnetoresistive element assembly and this intermediate potential is always remained on a reference potential.
In addition, a kind of disc driver is disclosed in Hei6-103508 Jap.P. open file, one of them diode or resistance are in parallel with magnetoresistive magnetic head, the resistance that forms a resistance less than this magnetoresistive element perhaps in parallel with the magnetoresistive element that is used to form magnetoresistive magnetic head.
Disclose a kind of disc driver in Hei6-60338 Jap.P. open file, it has holding circuit, and when the electrostatic potential that surpasses a predetermined value was added on the link of magnetoresistive magnetic head, these links were by short circuit.
In the various operation of making magnetoresistive magnetic head, promptly in the operation of making magnetoresistive element and magnetic head and their assembly, in some cases, owing to various different reasons, electrostatic potential is applied between the two link electrodes of magnetoresistive element assembly suddenly.The amplitude that depends on the electrostatic potential that applies might be damaged the magnetoresistive element assembly.The damage of magnetoresistive element assembly can be seen a kind of phenomenon that causes in the inner structure of magnetoresistive magnetic head.In a kind of like this structure, the magnetoresistive element assembly is made of the laminated body of each film, makes even is applying the electric current that can flow through very high currents density under the electrostatic potential that is considered to lower usually.
The problem that each routine techniques of introducing above exists is not take enough measures to offset the electrostatic potential that may be applied to suddenly on this magnetoresistive element.
In the routine techniques in being disclosed in Sho62-40610 Jap.P. open file, do not mention the measure that is used to offset above-mentioned static fully.This document only discloses a kind of magnetoresistive magnetic head.
As for disclosed routine techniques in Sho61-77114 Jap.P. open file, introduced a kind of measure that is used to offset the static that forms between each magnetic masking layer, but a problem that exists is not have fully to introduce to be used to offset the measure that is applied to the electrostatic charge on magnetic masking layer and the magnetoresistive element assembly suddenly.
If the problem that disclosed routine techniques exists in Hei2-94103 Jap.P. open file is to form potential difference (PD) in each magnetic masking layer, the measure of the static that not proposing is used to countervail takes place between each magnetic masking layer and magnetoresistive element assembly.
As for disclosed routine techniques in Hei6-103508 Jap.P. open file, the resistance of this resistance is less than magnetoresistive element, a problem that causes is that the electric current that flows to magnetoresistive element in the reproduction process process is like that little, so that can not obtain enough output.Another problem that this routine techniques exists is because diode is not inserted in this element, even a unilateral diode that connects in manufacture process is arranged, under the situation of the static that opposite feature occurs, will can not produce effect.
In addition, in the disclosed routine techniques, employing one comprises the holding circuit of diode and electric capacity in the magnetoresistive element assembly in Hei6-60338 Jap.P. open file.Yet, being lower than at voltage under 300 millivolts the voltage of beginning conducting, this diode is resolutely opened.Electric capacity about capacitor is not then mentioned.With reference to the off voltage of diode, the electric capacity of this capacitor estimates to be about 1 picofarad.Even the numerical value that the electric capacity of capacitor hypothesis has estimates that greater than this estimated value this electric capacity maximum is in the scope of 2 to 3 picofarads.Utilization has the capacitor of low like this electric capacity and has the diode of low like this off voltage, and the problem that this routine techniques exists is that this holding circuit can not offseted the electrostatic potential that is applied to suddenly as mentioned above on the electrode fully.
An object of the present invention is to provide a kind of magnetoresistive magnetic head, make high density recording and replay operations realize optimum condition, and have high reliability and the high production efficiency of making.
To achieve these goals, according to a aspect by magnetoresistive magnetic head provided by the invention, this magnetoresistive magnetic head be included in one on-chip: magnetic masking layer, magnetoresistive element assembly and the pair of electrodes paired that top is paired with the bottom, this is used for flowing through the magnetoresistive element assembly and detecting the change in voltage that the signal at magnetoresistive element assembly place causes continuing electric current to electrode, and the capacitor that an electric capacity is in the 5-100 picofarad scope is formed between the electrode.
More wish between electrode, to form capacitance and be in the capacitor of 10 picofarads to 10 microfarads.In addition, special hope, the electric capacity of capacitor itself is equal to or greater than the electric capacity of 5 picofarads and capacitor and the electric capacity sum of read/write IC is equal to or less than 50 picofarads, so that transmission fast.
To achieve these goals, another aspect according to magnetoresistive magnetic head provided by the invention, this magnetoresistive magnetic head be included in one on-chip: magnetic masking layer, reluctance type component element and the pair of electrodes paired that top is paired with the bottom, this is used for flowing through the magnetoresistive element assembly and detecting by the caused change in voltage of signal at magnetoresistive element assembly place continuing electric current to electrode, forms its resistance greater than the resistance of magnetoresistive element assembly but less than the resistance of 1000 times of this magnetoresistive element assembly resistances between electrode.
More wish between electrode, to form its Standard resistance range 5-100 times of resistance to the resistance of magnetoresistive element assembly.
To achieve these goals, another aspect according to magnetoresistive magnetic head provided by the invention, this magnetoresistive magnetic head be included in one on-chip: magnetic masking layer, magnetoresistive element assembly and the pair of electrodes paired that top is paired with the bottom, this is used for flowing through magnetoresistive element and detecting the change in voltage that is caused by the signal at magnetoresistive element assembly place continuing electric current to electrode, forms its threshold voltage and be equal to or greater than 0.5 volt and be equal to or less than 60 volts bilateral diode between electrode.
To achieve these goals, another aspect according to magnetoresistive magnetic head provided by the invention, this magnetoresistive magnetic head be included in one on-chip: magnetic masking layer and the pair of electrodes paired that top is paired with the bottom, this is used for read current is flow through the magnetoresistive element assembly and detects the change in voltage that is caused by the signal at magnetoresistive element assembly place to electrode; Electron device is installed between the electrode and a magnetic masking layer in two magnetic masking layers in two electrodes, be used for when the electric current that flows through electrode when flowing through the electric current of magnetoresistive element assembly, flow through a electric current to this magnetic masking layer.
In addition, to achieve these goals, another aspect according to magnetoresistive magnetic head provided by the invention, this magnetoresistive magnetic head be included in one on-chip: paired magnetic masking layer, magnetoresistive element assembly and the pair of electrodes in bottom that top is paired, this is used for read current is flow through the change in voltage that the signal with detecting at magnetoresistive element assembly place of magnetoresistive element assembly causes to electrode, and forming a capacitance swing between the magnetic masking layer in electrode in two electrodes and two magnetic masking layers is the capacitors of 5 picofarads to 100 microfarads.
Wish that more forming its capacitance swing between electrode is the capacitors of 10 picofarads to 10 microfarads.In addition, special hope, electric capacity and read/write IC electric capacity sum that the electric capacity of capacitor itself is equal to or greater than 5 picofarads and capacitor are equal to or less than 50 picofarads, so that transmission fast.
To achieve these goals, another aspect according to magnetoresistive magnetic head provided by the invention, this magnetoresistive magnetic head be included in one on-chip: magnetic masking layer, magnetoresistive element assembly and the pair of electrodes paired that top is paired with the bottom, this is used for flowing through this magnetoresistive element assembly and detecting the change in voltage that is caused by the signal at this magnetoresistive element assembly place continuing electric current to electrode; Form its resistance therein between the magnetic masking layer in electrode and two magnetic masking layers greater than the resistance of magnetoresistive element assembly and less than 1000 times resistance of this magnetoresistive element assembly resistance.
Wish that more forming its Standard resistance range between electrode is the 5-100 times of resistance to the resistance of magnetoresistive element assembly.
It should be noted that in magnetoresistive magnetic head, be formed on the capacitor between one of them electrode and one of them magnetic masking layer and be formed on another electrode and another magnetic masking layer between capacitor can be same type or differ from one another type.
Equally, in magnetoresistive magnetic head, be formed on the resistance between one of them electrode and one of them magnetic masking layer and be formed on another electrode and another magnetic masking layer between resistance can be same type or differ from one another type.
Hope in two electrodes electrode and a magnetic masking layer in two magnetic masking layers between the capacitor that forms be identical type with the capacitor that between another electrode and another magnetic masking layer, forms.Equally, wish that the resistance that forms between a electrode in two electrodes and the magnetic masking layer in two magnetic masking layers is identical type with the resistance that forms between another electrode and another magnetic masking layer.
It should be noted that above-mentioned magnetoresistive magnetic head is one and is used for read-only purpose magnetic head.That is, forming this magnetoresistive magnetic head and one on a substrate is used for only writing the induction magnetic head of purpose and is formed on this magnetoresistive magnetic head by general fashion.
By between electrode, forming an electric capacity, a resistance or a bilateral diode, perhaps by forming first electric capacity or first resistance therein between an electrode and one of them magnetic masking layer and between another electrode and another magnetic masking layer, forming the second identical or different capacitor of one and first capacitor or form the second identical or different resistance of one and first resistance, if the static electric weight that is applied to suddenly between the electrode is arranged will partly or entirely be shunted, flow through resistance or bilateral diode or charging is stored in the capacitor, thereby obviously reduces the current density of the magnetoresistive element of flowing through.Therefore, prevent that magnetoresistive head is owing to static damages.Therefore, can make and a kind ofly make high density recording and reproduction process realize optimization and have high reliability and the high magnetoresistive magnetic head of making production efficiency.
Fig. 1 is the planimetric map of expression according to the magnetoresistive magnetic head of first embodiment of the invention realization;
Fig. 2 is the sectional drawing that expression is got along the line A-A ' of magnetoresistive magnetic head shown in Figure 1;
Fig. 3 is the planimetric map of expression according to the magnetoresistive magnetic head of second embodiment of the present invention realization;
Fig. 4 is the sectional drawing that expression is got along the line B-B ' of magnetoresistive magnetic head shown in Figure 3;
Fig. 5 is the planimetric map of expression according to the magnetoresistive magnetic head of third embodiment of the present invention realization;
Fig. 6 is the sectional drawing that expression is got along the line C-C ' of magnetoresistive magnetic head shown in Figure 5;
Fig. 7 is the skeleton view of expression according to the magnetoresistive magnetic head of fourth embodiment of the present invention realization;
Fig. 8 is the skeleton view of expression according to the magnetoresistive magnetic head of fifth embodiment of the present invention realization;
Fig. 9 is the skeleton view of expression according to the magnetoresistive magnetic head of sixth embodiment of the present invention realization;
Figure 10 is the skeleton view of expression according to the magnetoresistive magnetic head of seventh embodiment of the present invention realization;
Figure 11 is the calcspar of expression according to the standard of the disc driver of eighth embodiment of the present invention realization;
Figure 12 is the curve map of mutual relationship between expression resonance frequency and electric capacity sum magnetic head and IC, is used to explain the present invention;
Figure 13 one is used for explaining how magnetic head provided by the invention is installed in the synoptic diagram of disc driver.Introduce each preferred embodiment below in detail.
With reference to accompanying drawing,, can make the present invention become more clear by detailed introduction to each preferred embodiment.
(embodiment 1)
The planimetric map of Fig. 1 magnetoresistive magnetic head 14 that to be expression realize according to the first embodiment of the present invention, Fig. 2 sectional drawing that to be expression got along the line A-A ' of magnetoresistive magnetic head shown in Figure 1.The structure of explained later magnetoresistive magnetic head 14.As shown in the figure, be formed with the magnetic masking layer 3 and 10 of 1 to 4 micron of a pair of thickness range on the insulating substrate 1 that for example constitutes for aluminium oxide carbonization titanium (alumina titanium-carbide) insulating substrate, they have on the certain thickness alumina insulation bottom 1 being generally used for smooth purpose; Usually thickness range is 0.05 to 0.2 micron the aluminium oxide or the insulation course 4 and 5 of silicon dioxide system, is used to form gap length; One magnetoresistive element assembly 6 between other element, comprising: soft magnetism biasing thin layer is used for applying lateral offset magnetic field to a surface of record-oriented medium; Non magnetic high resistance lead-in wire and magnetoresistive film layer; Magnetic domain is controlled biasing thin layer 7, is used to control the domain structure of magnetoresistive element assembly 6; By the electrode 9 that for example constitutes for the conductive layer of Ta/Au/Ta material; Be used to protect the insulation course 11 of said elements; And electrode weld tabs 12.
On the other hand with a side of the surface opposite of record-oriented medium on, have predetermined resistance and be formed between two electrodes 9 by the resistance 13 of reservation shape preparation.Resistance 13 is by identical with the material therefor that constitutes magnetoresistive element assembly 6.
When magnetoresistive magnetic head 14 during, through the read current of the electrode 9 magnetoresistive element assembly 6 of flowing through by the magnetic recording medium reproducing signal.Because the signal magnetic flux makes the resistance variations of magnetoresistive element assembly 6, causes the change in voltage that appears between the electrode 9.The variation that appears at the voltage between two electrodes 9 also reduces amplitude or increase according to the read current that flows to magnetoresistive element assembly 6, and this read current is shunted, the resistance 13 of also flowing through and connecting between two electrodes 9.Because resistance 13 and magnetoresistive element assembly 6 are in parallel and resistance resistance 13 is set at 100 times of resistance of reluctance type component element 6, therefore the loss that produces in resistance 13 owing to the read current splitter section of the resistance 13 of flowing through almost can be ignored.Attempting to obtain the effect of introducing as the back that prevents electrostatic damage and considering because the splitter section of read current causes between the loss weighs, hope is set the resistance of resistance 13 greater than the resistance of magnetoresistive element assembly 6 but less than 1000 times of the resistance of this magnetoresistive element assembly 6, as previously described.The Standard resistance range of more wishing the resistance 13 of formation between two electrodes 9 is 5-100 a times of magnetoresistive element assembly 6.
On the other hand when because when suddenly producing very big potential difference (PD) between the electrode 9 of static at magnetoresistive magnetic head 14, if when not forming resistance 13 between two electrodes 9, this static electric weight will flow through magnetic head element assembly 6 naturally.The amplitude of the electric current that at this moment worry flows through may be because joule's heat energy make 6 fusings of magnetoresistive element assembly, perhaps owing to the electromigration phenomenon is damaged.Yet, because two electrodes 9 are connected in parallel to each other with resistance 13 in this embodiment, because the static electric weight is shunted the resistance 13 of also flowing through, the flow through quantity of electrostatic charge of reluctance type component element 6 of instantaneous obvious reduction.Therefore, prevent to damage magnetoresistive element assembly 6.
Utilize above reluctance type magnetic 14 principle of work that this embodiment realizes by the agency of.This magnetoresistive magnetic head 14 shows the big effect of tool, and promptly this magnetoresistive magnetic head 14 can prevent to damage owing to apply the static electric weight suddenly between two electrodes 9.Therefore, the reliability of magnetoresistive magnetic head 14 greatly improves, and the production efficiency of Zhi Zaoing also can improve in addition.In disc driver, use this magnetoresistive magnetic head 14, also can expection obtain same better effect.
(embodiment 2)
The planimetric map of Fig. 3 magnetoresistive magnetic head that to be expression realize according to the second embodiment of the present invention, Fig. 4 sectional drawing that to be expression got along the line B-B ' of the magnetoresistive magnetic head among Fig. 3 14.The structure of the magnetoresistive magnetic head of realizing according to the second embodiment 14 almost completely structure with the magnetoresistive magnetic head of realizing by first embodiment 14 of previous introduction is identical.Yet under the situation of second embodiment, the resistance 13 that replaces between two electrodes 9 among first embodiment forms a capacitor 15, forms a parallel circuit together with magnetoresistive element assembly 6 as shown in Figure 4.Capacitor 15 comprises the insulation material layer that is made of titanium dioxide, and this insulation material layer is clipped between the metal level of its above and below.It should be noted that and also aluminium oxide can be replaced titanium dioxide as this insulation course.In addition, also can use carbon thin film layer by the substituted metal layer.
The principle of work of the magnetoresistive magnetic head of realizing according to second embodiment 14 is almost completely identical with principle of work according to the magnetoresistive magnetic head 14 of first embodiment realization of previous introduction.Yet as mentioned above, under the situation of second embodiment, the resistance 13 that replaces between two electrodes 9 among first embodiment forms a capacitor 15.Between two electrodes 9, form suddenly in the process of static electric weight,, electric charge is charged in short-term put aside in the capacitor 15, instantaneous quantity of dividing the electrostatic charge of the magnetoresistive element assembly 6 of flowing through significantly though capacitor 15 can not shunted the DC component that detects electric current.The electric capacity of capacitor 15 is big more, and the quantity of the electrostatic charge of savings in capacitor 15 is just many more.Therefore, prevent the viewpoint of electrostatic damage from protecting magnetoresistive element assembly 6, the capacitor 15 that electric capacity is equal to or greater than 5 picofarads is preferred.Yet the excessive size of capacitor 15 that must make of electric capacity is too big.Owing to this reason, the capacitance swing of capacitor is desirable by 5 picofarads to 100 microfarads.The capacitance swing of capacitor is more wished to 10 microfarads by 10 picofarads.In addition, the electric capacity of capacitor set being higher than 5 picofarads, make the electric capacity of capacitor and the electric capacity sum of read/write IC be equal to or less than 50 picofarads (as below introducing), is particularly advantageous for quick transmission.In this manner, can prevent that magnetoresistive element assembly 6 from damaging.
As mentioned above, the effect of the magnetoresistive magnetic head almost realized with first embodiment according to previous introduction of the effect that shows of the magnetoresistive magnetic head of realizing according to second embodiment 14 is almost completely identical.Under the situation of second embodiment, greatly improved the reliability of magnetoresistive magnetic head 14, in addition, also improved the production efficiency of making.With this magnetoresistive magnetic head 14 be applied in disc driver also expectability obtain same good effect.
The previous described quick transmission of explained later.In this quick transmission course, the ability of transmitting high-frequency signal has and can lack.Particularly owing between electrode, form a capacitor, more necessary consideration this point.Replenish discussion below to this topic.Long distance from the link of magnetic head to read/write IC can increase electrostatic capacitance and inductance inevitably, must form low-frequency resonant point.Usually wish that resonance frequency doubles the maximum useful frequency of disc driver at least.For example under the situation for the disc driver of 3.5 inches disks, reach to the distance of Writing/Reading IC by the link of magnetic head by restriction and to be equal to or less than 42 millimeters numerical value, inductance and electrostatic capacitance can be restricted to the numerical value that is equal to or less than 30 nanohenries and 20 picofarads respectively.In this case, for the transmission speed of 12 megabit per seconds, 4.5 times of the maximum frequencies of use are to this transmission speed (=4.5 * 12 megabit per seconds=54 megahertzes).Wish that so then resonance frequency is equal to or greater than 2 times (=2 * 54 megahertzes=108 megahertzes) that use maximum frequency.Figure 12 is the mutual relationship between the input capacitance amount sum of electrostatic capacitance amount and read/write IC of expression resonance frequency and magnetic head, and this relation is to utilize the numerical value of top appointment to obtain according to result of calculation.By obviously expression of figure, in order to make resonance frequency be equal to or higher than 108 megahertzes, need be with the numerical limits of electrostatic capacitance amount to being equal to or less than 50 picofarads, and also with the numerical limits of the input capacitance amount sum of the electrostatic capacitance amount of magnetic head and read/write IC to by the time or less than 50 picofarads.If the electrostatic capacitance amount of magnetic head is 30 picofarads, then the input capacitance amount of read/write IC must be equal to or less than 30 picofarads.
(embodiment 3)
Fig. 5 is the planimetric map of the magnetoresistive magnetic head realized according to the third embodiment of the present invention, Fig. 6 sectional drawing that to be expression got along the line C-C ' of magnetoresistive magnetic head shown in Figure 5.The structure of the magnetoresistive magnetic head of realizing according to the third embodiment of the present invention 14 is almost completely identical with structure according to the magnetoresistive magnetic head 14 of first embodiment realization of previous introduction.Except under the situation of the 3rd embodiment, substrate 1 by semiconductor material for example Si make, the resistance 13 that replaces among first embodiment between two electrodes 9 forms a diode 17 on Si substrate 1, so that form a parallel circuit together with magnetoresistive element assembly 6 as shown in Figure 6.
By on Si substrate 1, form a N through ion bombardment and thermal diffusion
+P
+District and form an insulating thin layer and promptly form thin layer and prepare a diode 17 by thermal oxidation.
The principle of work of the magnetoresistive magnetic head of realizing according to the 3rd embodiment 14 is almost completely identical with principle of work according to the magnetoresistive magnetic head 14 of first embodiment realization of previous introduction.Yet as mentioned above, under the situation of the 3rd embodiment, the resistance 13 that replaces between two electrodes 9 among first embodiment forms this diode 17.Though capacitor 15 can not be shunted the DC component that detects electric current, between two utmost points 9 in the process of instantaneous formation static electric weight, diode 17 since surpass diode 17 threshold voltages the effect of electrostatic potential and the short circuit conducting.Therefore, do not have greater than the flow of charge of the electrostatic potential of diode 17 threshold voltages and cross magnetoresistive element assembly 6.Therefore, can prevent that magnetoresistive element assembly 6 is owing to the instantaneous static electric weight that is applied on it damages.Because this reason, the threshold voltage settings of diode 17 is higher than 0.5 volt.Be higher than this threshold voltage according and may cause that magnetoresistive element assembly 6 damages.
As mentioned above, the effect that shows of the magnetoresistive magnetic head of realizing according to the 3rd embodiment 14 is almost identical with the magnetoresistive magnetic head that first embodiment according to previous introduction realizes.Under the situation of the 3rd embodiment, the reliability of magnetoresistive magnetic head 14 has greatly improved, and in addition, the production efficiency of manufacturing also can improve.This magnetoresistive magnetic head 14 is used in the disc driver, and also expectability obtains same good effect.
(embodiment 4)
Fig. 7 is the skeleton view of expression according to the magnetoresistive magnetic head of fourth embodiment of the present invention realization.Explained later is according to the structure of the magnetoresistive magnetic head of the 4th embodiment realization.As shown in the figure, be formed with above the substrate made of insulating material 1 of for example aluminium oxide carbonization titanium: a pair of thickness range is at the magnetic masking layer 3 and 10 of 1-4 micron, and this magnetic masking layer 3 and 10 is generally the insulating bottom layer that is used for smooth purpose 2 of oxidation aluminum having certain thickness; Usually the thickness range by aluminium oxide or silicon dioxide system is 0.05 to 0.2 micron insulation course 4 and 5 that is used to form gap length; Magnetoresistive element assembly 6 in the middle of other element comprises: the soft magnetism biasing thin layer, non magnetic high resistance lead-in wire and the magnetic resistance thin layer that are used for applying to a surface of record-oriented medium lateral offset magnetic field; And electrode 9 and 9 ', by for example being the conductive layer of Ta/Au/Ta material system.
This capacitor forms a circuit in parallel together with magnetoresistive element assembly 6.Therefore, form suddenly in the process of static electric weight between electrode 9 and 9 ', electric charge charges in short-term and puts aside in the capacitor 15, the flow through quantity of electrostatic charge of magnetoresistive element assembly 6 of instantaneous obvious reduction.
In the structure similar,, can increase the electric capacity of capacitor by electrode 9 and 9 ' being overlapped each other along the stacked direction of element to the 4th embodiment.
As mentioned above, the effect that shows of the magnetoresistive magnetic head of realizing according to the 4th embodiment 14 is almost identical with the magnetoresistive magnetic head that first embodiment according to previous introduction realizes.Under the situation of the 4th embodiment, the reliability of magnetoresistive magnetic head 14 has greatly improved, and in addition, can also improve the production efficiency of manufacturing.This magnetoresistive magnetic head 14 is applied in the disc driver also and can expection obtains same good effect.
(embodiment 5)
Fig. 8 is the skeleton view of expression according to the magnetoresistive magnetic head of fifth embodiment of the present invention realization.The structure of the magnetoresistive magnetic head of realizing according to the 5th embodiment is almost identical with the 4th embodiment according to previous introduction, remove as shown in the figure, under the situation of the 5th embodiment, one high-resistance material sandwiches and form a resistance 13 ' between electrode 9 and 9 ', forms a parallel circuit together with magnetoresistive element assembly 6.
When magnetoresistive magnetic head 14 during by magnetic recording medium 14 reproducing signals, the read current reluctance type spare assembly 6 between electrode 9 and 9 ' of flowing through.The resistance of magnetoresistive element assembly 6 causes the change in voltage that occurs with the signal flux change between electrode 9 and 9 '.The voltage that occurs between electrode 9 and 9 ' also changes the increase and decrease amplitude according to the detection electric current of the magnetoresistive element assembly 6 of flowing through, and this read current is shunted, and also flows through to be connected resistance 13 ' between electrode 9 and 9 '.Because resistance 13 is in parallel with magnetoresistive element assembly 6, and 5 times of resistance that the resistance of resistance 13 are set at the magnetoresistive element assembly, owing to the loss that the splitter section of the read current of the resistance 13 of flowing through produces in resistance 13 almost can be ignored.
When producing significant electric position between the electrode 9 and 9 ' at magnetoresistive magnetic head 14 suddenly owing to static, if do not form resistance 13 ' between electrode 9 and 9 ', this electrostatic charge will flow to magnetoresistive element assembly 6 naturally.The amplitude that depends on the electric current that at this moment flows through, worrying may be because joule's heat energy melts this magnetoresistive element assembly 6 and owing to the electromigration phenomenon is destroyed.Yet, because in this embodiment, electrode 9 and 9 ' in parallel with resistance 13 ', this electrostatic charge is shunted, the resistance 13 ' of also flowing through, the flow through quantity of electrostatic charge of magnetoresistive element assembly 6 of instantaneous obvious reduction.Therefore, prevent that magnetoresistive element assembly 6 from damaging.
As mentioned above, the effect that shows of the magnetoresistive magnetic head of realizing according to the 5th embodiment 14 is almost identical with the magnetoresistive magnetic head that first embodiment according to previous introduction realizes.More particularly, under the situation of the 5th embodiment, also can greatly improve the reliability of magnetoresistive magnetic head 14, also can improve the production efficiency of manufacturing in addition.This magnetoresistive magnetic head 14 is applied in the disc driver, and also expectability obtains same good effect.
(embodiment 6)
Fig. 9 is the skeleton view of expression according to the magnetoresistive magnetic head of the 6th embodiment realization.In the 4th embodiment, shape occupies a capacitor between electrode 9 and 9 ' as mentioned above.On the other hand, in the 6th embodiment, two insulating material 15 ' place between magnetic masking layer 3 and the electrode 9 ' and magnetic masking layer 10 and electrode 9 between so that form two capacitors.Under the situation of the 6th embodiment, the electric capacity of two capacitors all is 50 picofarads.The potential difference (PD) that occurs is less than the 4th embodiment, and the 6th embodiment is applicable to the design that the slit is narrow.Because two capacitors do not form electrode 9 and 9 ' between itself, among other parameter, the electric capacity of two capacitors can be determined with higher dirigibility according to the shape of magnetic masking layer 3 and 10.The electric capacity of the capacitor between magnetic masking layer 3 and the electrode 9 ' can be defined as with magnetic masking layer 10 and electrode 9 between the different numerical value of electric capacity of capacitor.The principle of work of the 6th embodiment is identical with the 4th embodiment.
(embodiment 7)
Figure 10 is the skeleton view of expression according to the magnetoresistive magnetic head of seventh embodiment of the present invention realization.Under the situation of first embodiment, resistance is formed between electrode 9 and 9, and under the situation of the 5th embodiment, resistance is formed between electrode 9 and 9 ', previous introduce the same of erect image.On the other hand, under the situation of the 7th embodiment, a resistance is formed between magnetic masking layer 3 and the electrode 9 ', and another resistance is formed between magnetic masking layer 10 and the electrode 9.10 times of the resistances of each resistance are to the resistance of magnetoresistive element assembly 6.The potential difference (PD) that forms is less than the 5th embodiment, and the 7th embodiment is suitable for the slit needs narrow design.Because two resistance promptly are not formed on electrode 9 and 9 between itself, be not formed on electrode 9 and 9 ' between itself yet.Among other parameter, can be according to the shape of magnetic masking layer 3 and 10 with the higher resistance that must determine resistance flexibly.In other words, can be defined as the different numerical value of capacitor with capacitor between magnetic masking layer 10 and electrode 9 in the electric capacity of the capacitor between magnetic masking layer 3 and the electrode 9 '.The principle of work of the 7th embodiment is identical with the 5th embodiment.
Realize that according to first to the 5th embodiment that introduces above the capacitor, resistance or the bilateral diode that form between two electrodes in magnetoresistive magnetic head all have predetermined type.Yet, implement according to the embodiment 6 that introduces above and 7, capacitor that forms between one of them electrode in magnetoresistive magnetic head and one of them magnetic masking layer or resistance can have identical type or different types each other with capacitor that forms or resistance between another electrode and another magnetic masking layer.
(the 8th embodiment)
Figure 11 is the standard calcspar that expression realizes according to the eighth embodiment of the present invention.As shown in the figure, in disk pack unit 33, a plurality of disks 31 are installed on main shaft, each disk drives high speed rotating by media-driven system (being motor) 34.Magnetoresistive magnetic head 14 according to wherein arbitrary embodiment manufacturing of introducing so far places on the magnetic recording surface of disk 31.Each magnetoresistive magnetic head act as a servocontrol magnetic head.Utilize magnetic head drive system 35 to be bordering on radial drive magnetoresistive magnetic head 14 along magnetoresistive magnetic head 14 through driving mechanisms 32.Disk drive also comprises: one utilizes magnetoresistive magnetic head 14 to write down read/write system 36 with playing data for broadcasting, be used to handle the signal processing system 37 of the signal of representing these data, be used to control above-named read/write system 36, the control system 38 and one of signal processing system 37 and media-driven system is given interface arrangement 39, is used for being received data and being sent data to this device by a device according to higher level.
Figure 13 is used for explaining how to be installed in disc driver by magnetoresistive magnetic head provided by the invention.Magnetoresistive magnetic head 14 forms an assembly together with an inductive head that is used to write data and is installed in a slider pad 22.Slider pad 22 is supported and is remained on a position of disk 21 tops by a supporting mass 23.In supporting mass 23, be equipped with and be used for receiving the signal transmssion line 25 of electric signal to slider pad 22 transmissions or by it.The end of the signal transmssion line on slider pad 22 is the electrode of slider pad 22.The other end of signal transmssion line 25 is connected to and is used for sending " a writing " signal and a read/write IC26 who is used to receive the reproducing signal that is produced by magnetoresistive magnetic head 14 to inductive head.Under the situation of 3.5 inches disks, the length of signal transmssion line 25 is equal to or less than 42 millimeters.On the other hand, under the situation of 2.5 inches disks, the length of transmission line 25 is equal to or less than 30 millimeters.Under the situation of the 8th embodiment, the input capacitance of read/write IC26 determines that numerical value is equal to or less than 20 picofarads, makes it possible to realize the speed transmission data according to being higher than 10 megabit per seconds.
As mentioned above, according to the present invention, form suddenly between the electrode at the link place of magnetoresistive magnetic head in the process of static electric weight, quantity moment of the electrostatic charge of the magnetoresistive element assembly 6 of flowing through obviously reduces.Therefore, can prevent owing to the static electric weight that applies suddenly between the electrode of the link of magnetoresistive magnetic head damages the magnetoresistive element assembly.Therefore, greatly improve the reliability of magnetoresistive magnetic head, also can improve the production efficiency of manufacturing.This magnetoresistive magnetic head is installed to also can expects in the aforesaid disc driver and produce identical good effect.
Claims (10)
1 one kinds of magnetoresistive magnetic heads, be included in one on-chip: a pair of upper and lower magnetic masking layer, magnetoresistive element assembly and pair of electrodes, reach electrode is used for read current being flow through described magnetoresistive element and detecting the change in voltage that is caused by a signal, wherein forming capacitance swing between described electrode is the capacitors of 5 picofarads to 100 microfarads.
2 magnetoresistive magnetic heads according to claim 1, the electric capacity of wherein said capacitor itself is equal to or greater than 5 picofarads, and the electric capacity sum of the electric capacity of described capacitor and read/write IC is equal to or less than 50 picofarads.
3 one kinds of magnetoresistive magnetic heads, be included in one on-chip: a pair of upper and lower magnetic masking layer, magnetoresistive element assembly and pair of electrodes, this is used to make read current to flow through described magnetoresistive element assembly to electrode and detects the change in voltage that is caused by a signal, wherein forms its resistance greater than the resistance of described magnetoresistive element but than 1000 times little of described magnetoresistive element assembly resistance between described electrode.
4 magnetoresistive magnetic heads according to claim 3,5 to 100 times of the Standard resistance ranges of wherein said resistance are to the resistance of described magnetoresistive element assembly.
5 one kinds of magnetoresistive magnetic heads, be included in one on-chip: a pair of upper and lower magnetic masking layer, magnetoresistive element assembly and pair of electrodes, this is used for read current being flow through described magnetoresistive element assembly and detecting the change in voltage that is caused by a signal to electrode, wherein forms its threshold voltage of bilateral diode more than or equal to 0.5 volt but be less than or equal to 60 volts between described electrode.
6 one kinds of magnetoresistive magnetic heads, be included in one on-chip: a pair of upper and lower magnetic masking layer, magnetoresistive element assembly and pair of electrodes, this is used for read current is flow through described magnetoresistive element assembly and detects the change in voltage that is caused by a signal to electrode, wherein between one of one of described two electrodes and described two magnetic masking layers, form an electron device, this device is used for making electric current flow into described magnetic masking layer when the current amplitude of the electrode of flowing through during greater than the electric current of the described magnetoresistive element assembly of flowing through.
7 one kinds of magnetoresistive magnetic heads, be included in one on-chip: a pair of upper and lower magnetic masking layer, magnetoresistive element assembly, and pair of electrodes, this is used for read current is flow through described magnetoresistive element assembly and detects the change in voltage that a signal causes to electrode, and wherein the capacitance swing of the capacitor that forms between one of one of two electrodes of institute's art and described two magnetic masking layers is that 5 picofarads are to 100 microfarads.
8 magnetoresistive magnetic heads according to claim 7, the electric capacity of wherein said capacitor itself is equal to or greater than 5 picofarads, the electric capacity of described condenser capacity and read/write IC and be equal to or less than 50 picofarads.
9 one kinds of magnetoresistive magnetic heads, be included in one on-chip: a pair of upper and lower magnetic masking layer, magnetoresistive element assembly and pair of electrodes, this is used for read current being flow through described magnetoresistive element assembly and detecting the change in voltage that is caused by a signal to electrode, and the resistance that wherein forms resistance between one of one of described two electrodes and described two magnetic masking layers is greater than the class value of described magnetoresistive element assembly but than the 1000 times little of resistance of described magnetoresistive element assembly.
10 magnetoresistive magnetic heads according to claim 9, the Standard resistance range of wherein said resistance are 5 to 100 times of described magnetoresistive element assembly resistance.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP197208/95 | 1995-08-02 | ||
| JP7197208A JPH0944820A (en) | 1995-08-02 | 1995-08-02 | Magnetoresistive magnetic head |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1147668A true CN1147668A (en) | 1997-04-16 |
Family
ID=16370628
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN96109280A Pending CN1147668A (en) | 1995-08-02 | 1996-08-01 | Magnetoresistive magnetic head |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JPH0944820A (en) |
| KR (1) | KR970012322A (en) |
| CN (1) | CN1147668A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110504257A (en) * | 2012-11-02 | 2019-11-26 | 罗姆股份有限公司 | Chip capacitor, circuit unit and electronic equipment |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10247307A (en) * | 1997-03-04 | 1998-09-14 | Fujitsu Ltd | Magnetic head and magnetic storage device |
| JP3576361B2 (en) * | 1997-09-18 | 2004-10-13 | 富士通株式会社 | Magnetoresistive head and magnetic recording / reproducing device |
| JP3843596B2 (en) * | 1998-04-08 | 2006-11-08 | ソニー株式会社 | Magnetoresistive magnetic head |
| JP2002056513A (en) * | 2000-08-07 | 2002-02-22 | Alps Electric Co Ltd | Method for magnetoresistive head device |
| JP2004326980A (en) * | 2003-04-28 | 2004-11-18 | Hitachi Ltd | Magnetic head wafer and method of manufacturing composite type magnetic head |
| JP4504902B2 (en) | 2005-10-28 | 2010-07-14 | ヒタチグローバルストレージテクノロジーズネザーランドビーブイ | Manufacturing method of thin film magnetic head |
| US8081399B2 (en) * | 2009-11-09 | 2011-12-20 | Hitachi Global Storage Technologies Netherlands B.V. | Perpendicular magnetic recording write head with enhancement capacitor on slider body for write current overshoot at write current switching |
| JP6791183B2 (en) | 2018-03-16 | 2020-11-25 | Tdk株式会社 | Magnetoresistive element, its manufacturing method, and position detector |
| KR102181481B1 (en) * | 2018-11-22 | 2020-11-23 | 주식회사 네오엔비즈 | Energy saving aqua tank for biofloc |
-
1995
- 1995-08-02 JP JP7197208A patent/JPH0944820A/en active Pending
-
1996
- 1996-08-01 CN CN96109280A patent/CN1147668A/en active Pending
- 1996-08-01 KR KR1019960032150A patent/KR970012322A/en not_active Application Discontinuation
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110504257A (en) * | 2012-11-02 | 2019-11-26 | 罗姆股份有限公司 | Chip capacitor, circuit unit and electronic equipment |
| CN110504257B (en) * | 2012-11-02 | 2023-12-08 | 罗姆股份有限公司 | Chip capacitor, circuit assembly and electronic device |
Also Published As
| Publication number | Publication date |
|---|---|
| KR970012322A (en) | 1997-03-29 |
| JPH0944820A (en) | 1997-02-14 |
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