CN114759886A - 一种射频放大电路 - Google Patents
一种射频放大电路 Download PDFInfo
- Publication number
- CN114759886A CN114759886A CN202210680487.7A CN202210680487A CN114759886A CN 114759886 A CN114759886 A CN 114759886A CN 202210680487 A CN202210680487 A CN 202210680487A CN 114759886 A CN114759886 A CN 114759886A
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- radio frequency
- circuit
- effect transistor
- field effect
- order intermodulation
- Prior art date
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- 230000005669 field effect Effects 0.000 claims abstract description 32
- 230000003321 amplification Effects 0.000 claims abstract description 16
- 238000003199 nucleic acid amplification method Methods 0.000 claims abstract description 16
- 239000003990 capacitor Substances 0.000 claims description 10
- 238000002955 isolation Methods 0.000 claims description 9
- 238000005516 engineering process Methods 0.000 abstract description 4
- 101001091538 Homo sapiens Pyruvate kinase PKM Proteins 0.000 description 14
- 102100034911 Pyruvate kinase PKM Human genes 0.000 description 14
- 238000000034 method Methods 0.000 description 9
- 230000006872 improvement Effects 0.000 description 4
- 238000013459 approach Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000004891 communication Methods 0.000 description 2
- 230000006835 compression Effects 0.000 description 2
- 238000007906 compression Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/32—Modifications of amplifiers to reduce non-linear distortion
- H03F1/3205—Modifications of amplifiers to reduce non-linear distortion in field-effect transistor amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/06—Receivers
- H04B1/16—Circuits
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F30/00—Computer-aided design [CAD]
- G06F30/30—Circuit design
- G06F30/36—Circuit design at the analogue level
- G06F30/373—Design optimisation
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Networks & Wireless Communication (AREA)
- Signal Processing (AREA)
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Amplifiers (AREA)
Abstract
Description
Claims (5)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202210680487.7A CN114759886B (zh) | 2022-06-16 | 2022-06-16 | 一种射频放大电路 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202210680487.7A CN114759886B (zh) | 2022-06-16 | 2022-06-16 | 一种射频放大电路 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN114759886A true CN114759886A (zh) | 2022-07-15 |
CN114759886B CN114759886B (zh) | 2022-10-28 |
Family
ID=82336948
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202210680487.7A Active CN114759886B (zh) | 2022-06-16 | 2022-06-16 | 一种射频放大电路 |
Country Status (1)
Country | Link |
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CN (1) | CN114759886B (zh) |
Citations (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6404284B1 (en) * | 2001-04-19 | 2002-06-11 | Anadigics, Inc. | Amplifier bias adjustment circuit to maintain high-output third-order intermodulation distortion performance |
EP1418669A2 (en) * | 2002-11-08 | 2004-05-12 | Renesas Technology Corp. | Semiconductor integrated circuit device and wireless communication system |
US20060160502A1 (en) * | 2005-01-19 | 2006-07-20 | Northrop Grumman Corporation | Feedforward spur cancellation approach using low IP amplifier |
US20070285162A1 (en) * | 2006-05-22 | 2007-12-13 | Theta Microelectronics, Inc. | Highly linear Low-noise amplifiers |
CN101834566A (zh) * | 2010-05-31 | 2010-09-15 | 广州市广晟微电子有限公司 | 基于低噪声放大器的过失真方法和低噪声放大器 |
US20120306576A1 (en) * | 2011-06-02 | 2012-12-06 | Vamsi Paidi | Method and system for improving linearity of an amplifier by means of im3 cancelation |
CN104617890A (zh) * | 2015-01-31 | 2015-05-13 | 上海华虹宏力半导体制造有限公司 | 调整射频放大器线性度的电路设计 |
US20190280661A1 (en) * | 2018-03-07 | 2019-09-12 | Bae Systems Information And Electronic Systems Integration Inc. | Variable gain amplifier |
CN212231409U (zh) * | 2020-06-17 | 2020-12-25 | 成都华光瑞芯微电子股份有限公司 | 一种有源偏置集成电路宽带低噪声放大器 |
CN112202408A (zh) * | 2020-10-10 | 2021-01-08 | 西安博瑞集信电子科技有限公司 | 一种GaN工艺的共源共栅射频放大器 |
CN112751534A (zh) * | 2020-12-23 | 2021-05-04 | 西安博瑞集信电子科技有限公司 | 一种带温度补偿的有源偏置电路及共源共栅放大器 |
CN114362686A (zh) * | 2021-12-17 | 2022-04-15 | 成都嘉纳海威科技有限责任公司 | 一种基于交调对消技术的放大器 |
-
2022
- 2022-06-16 CN CN202210680487.7A patent/CN114759886B/zh active Active
Patent Citations (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6404284B1 (en) * | 2001-04-19 | 2002-06-11 | Anadigics, Inc. | Amplifier bias adjustment circuit to maintain high-output third-order intermodulation distortion performance |
EP1418669A2 (en) * | 2002-11-08 | 2004-05-12 | Renesas Technology Corp. | Semiconductor integrated circuit device and wireless communication system |
US20060160502A1 (en) * | 2005-01-19 | 2006-07-20 | Northrop Grumman Corporation | Feedforward spur cancellation approach using low IP amplifier |
US20070285162A1 (en) * | 2006-05-22 | 2007-12-13 | Theta Microelectronics, Inc. | Highly linear Low-noise amplifiers |
CN101834566A (zh) * | 2010-05-31 | 2010-09-15 | 广州市广晟微电子有限公司 | 基于低噪声放大器的过失真方法和低噪声放大器 |
US20120306576A1 (en) * | 2011-06-02 | 2012-12-06 | Vamsi Paidi | Method and system for improving linearity of an amplifier by means of im3 cancelation |
CN104617890A (zh) * | 2015-01-31 | 2015-05-13 | 上海华虹宏力半导体制造有限公司 | 调整射频放大器线性度的电路设计 |
US20190280661A1 (en) * | 2018-03-07 | 2019-09-12 | Bae Systems Information And Electronic Systems Integration Inc. | Variable gain amplifier |
CN212231409U (zh) * | 2020-06-17 | 2020-12-25 | 成都华光瑞芯微电子股份有限公司 | 一种有源偏置集成电路宽带低噪声放大器 |
CN112202408A (zh) * | 2020-10-10 | 2021-01-08 | 西安博瑞集信电子科技有限公司 | 一种GaN工艺的共源共栅射频放大器 |
CN112751534A (zh) * | 2020-12-23 | 2021-05-04 | 西安博瑞集信电子科技有限公司 | 一种带温度补偿的有源偏置电路及共源共栅放大器 |
CN114362686A (zh) * | 2021-12-17 | 2022-04-15 | 成都嘉纳海威科技有限责任公司 | 一种基于交调对消技术的放大器 |
Non-Patent Citations (2)
Title |
---|
KHANHTRAN PHAN: "Two high dynamic range mmW amplifiers in SMT package with ESD protection", 《2007 EUROPEAN MICROWAVE CONFERENCE》 * |
张博: "一种宽带高线性度射频放大器", 《电子元件与材料》 * |
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Publication number | Publication date |
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CN114759886B (zh) | 2022-10-28 |
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Address after: Building 12, Hard Technology Enterprise Community, No. 3000 Biyuan Second Road, High tech Zone, Xi'an City, Shaanxi Province, 710065 Patentee after: Borui Jixin (Xi'an) Electronic Technology Co.,Ltd. Address before: 710199 building 12, hard technology enterprise community, No. 3000, Biyuan Second Road, high tech Zone, Xi'an, Shaanxi Province Patentee before: XI'AN BORUI JIXIN ELECTRONIC TECHNOLOGY Co.,Ltd. |
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Effective date of registration: 20240417 Address after: Chengdu Xingu Enterprise Happiness Center, Building 2, A8-2, No. 399 Guoxin Avenue, Dongsheng Street, Shuangliu District, Chengdu City, Sichuan Province, 610200 Patentee after: Borui Jixin (Chengdu) Electronic Technology Co.,Ltd. Country or region after: China Address before: Building 12, Hard Technology Enterprise Community, No. 3000 Biyuan Second Road, High tech Zone, Xi'an City, Shaanxi Province, 710065 Patentee before: Borui Jixin (Xi'an) Electronic Technology Co.,Ltd. Country or region before: China |
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