CN114759061A - Micro LED chip array integrated structure - Google Patents
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- 239000004065 semiconductor Substances 0.000 claims description 61
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- 238000002955 isolation Methods 0.000 claims description 22
- 239000011241 protective layer Substances 0.000 claims description 7
- 238000005520 cutting process Methods 0.000 abstract description 14
- 238000004519 manufacturing process Methods 0.000 description 10
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- 229910002601 GaN Inorganic materials 0.000 description 2
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- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
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- 239000011777 magnesium Substances 0.000 description 1
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- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- Microelectronics & Electronic Packaging (AREA)
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Abstract
The invention provides a Micro LED chip array integrated structure, which comprises: the Micro LED chip array consists of Micro LED chips in X rows and Y columns; the Y-column first polarity driving circuit is connected with the first electrodes of the X MicroLED chips in each column; the X-row second polarity driving circuit is connected with the second electrodes of the Y Micro LED chips in each row; y first polarity electrodes connected to the first polarity driving lines of each column; x second polarity electrodes connected to the second polarity driving lines of each row; and an insulating layer between the first polarity driving line and the second polarity driving line. The invention solves the problems of difficult control of transfer cutting precision, low transfer speed and low transfer yield caused by the undersize of the conventional Micro LED chip.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a Micro LED chip array integrated structure.
Background
The Micro LED chip is a big hotspot applied to a display light source at present, wherein the size of the Micro LED chip is far smaller than that of the current LED chip, so that a single LED chip can be used as a minimum pixel unit, the resolution of the existing display screen is greatly improved, and the Micro LED chip has the advantages of low power consumption, high contrast, high brightness and the like.
However, Micro LED chips face many problems in practical production applications. Firstly, when the LED chip reaches the Micro level, the cutting difficulty of the LED core particles is greatly increased, the cutting precision requirement is higher, and the cutting time is longer. Besides, the practical production of the Micro LED chips still has a huge transfer problem, and when a single Micro LED chip is transferred to the substrate, because the whole core particle size of the Micro LED chip is small, the interconnection bonding pad of the Micro LED chip is far smaller than that of a conventional LED chip, the Micro LED chip is difficult to grab in the transfer process, and the alignment difficulty of the electrode of the Micro LED chip is greatly increased after the Micro LED chip is grabbed.
In order to solve the problem of huge transfer at present, various technical solutions such as roll-to-roll transfer, laser transfer and the like are available. Although the above transfer techniques have been proposed, these techniques still have the problems of difficulty in controlling transfer precision, slow transfer speed and low transfer yield, and also require significant replacement or addition or modification of the existing equipment, which makes the transfer equipment expensive and the manufacturing cost significantly increased, which is a great challenge for production and manufacturing.
Disclosure of Invention
Based on the above, the invention aims to provide a Micro LED chip array integrated structure, so as to fundamentally solve the problems of difficult control of transfer cutting precision, low transfer speed and low transfer yield caused by the undersize of the conventional Micro LED chip.
According to the embodiment of the invention, the Micro LED chip array integrated structure comprises:
the Micro LED chip array consists of Micro LED chips in X rows and Y columns;
the Y-column first polarity driving circuit is connected with the first electrodes of the X Micro LED chips in each column;
the X-row second polarity driving circuit is connected with the second electrodes of the Y Micro LED chips in each row;
y first polarity electrodes connected to the first polarity driving lines of each column;
x second polarity electrodes connected to the second polarity driving lines of each row; and
an insulating layer between the first polarity driving line and the second polarity driving line.
In addition, the Micro LED chip array integrated structure according to the above embodiment of the present invention may further have the following additional technical features:
further, the Micro LED chip includes:
the device comprises a substrate, an epitaxial layer positioned on the substrate and a conductive electrode positioned on the epitaxial layer;
the epitaxial layer comprises a first semiconductor layer, a light emitting layer and a second semiconductor layer which are sequentially arranged on the substrate, and the polarity of the first semiconductor layer is opposite to that of the second semiconductor layer;
the conductive electrode includes a first electrode electrically connected to the first semiconductor layer and a second electrode electrically connected to the second semiconductor layer.
Further, X is not less than 1, Y is not less than 1, and X and Y are not 1 at the same time.
Furthermore, an isolation groove for isolating the adjacent Micro LED chips is formed in the boundary of each Micro LED chip.
Further, the insulating layer includes a first insulating layer and a second insulating layer;
the first insulating layer covers the array of Micro LED chips, and the first polarity driving circuit penetrates through the first insulating layer to be connected with the first electrode;
the second insulating layer covers the first insulating layer and the first polarity driving circuit, and the second polarity driving circuit passes through the second insulating layer and the first insulating layer to be connected with the second electrode.
Further, the Micro LED chip array integrated structure further includes a protection layer covering the Micro LED chip array, the first polarity driving line, and the second polarity driving line;
the first polarity electrodes penetrate through the protective layer and are connected with corresponding first polarity driving lines, and the second polarity electrodes penetrate through the protective layer and are connected with corresponding second polarity driving lines.
Further, the first polarity electrode and the second polarity electrode are located on a non-light-emitting surface in the Micro LED chip array.
Further, each of the first polarity electrodes and each of the second polarity electrodes are respectively arranged along two opposite corners of the Micro LED chip array in a staggered manner.
Further, the side length of a light emitting layer in the Micro LED chip is less than 100 um.
Further, the isolation groove is arranged between every two adjacent columns of Micro LED chips.
Compared with the prior art: the Micro LED chip array is formed by arranging an array of Micro LED chips consisting of X rows and Y columns, each column is provided with a first polarity driving circuit connected with a first electrode, each row is provided with a second polarity driving circuit connected with a second electrode, the first polarity driving circuit is connected with the first polarity electrode, and the second polarity driving circuit is connected with the second polarity electrode, so that the existing multiple Micro LED chips and the driving circuit which is originally required to be realized at a die bonding end are integrated at a core particle end to form a Micro LED chip array integrated structure, and the first polarity driving circuit and the second polarity driving circuit are integrated at the core particle end, so that all X multiplied by Y Micro LED chips of the Micro LED chip array can be respectively lightened through the X first polarity electrodes and the Y second polarity electrodes, and the Micro LED chip array can be used as a minimum cutting part, The transfer and interconnection unit enables the size of the minimum cutting, transfer and interconnection unit to reach the magnitude level which can be realized by the existing process level, so that the problems of difficult control of transfer cutting precision, low transfer speed and low transfer yield caused by the undersize of the existing Micro LED chip are solved; meanwhile, the problems of large picking-up difficulty and huge transfer of the Micro LED chip are avoided, so that the production cost of both the core particle end and the die bonding end can be greatly reduced; meanwhile, the transfer frequency of the Micro LED chip array is greatly reduced, so that the production cost is reduced.
Drawings
FIG. 1 is a schematic cross-sectional view of an integrated Micro LED chip array structure according to an embodiment of the present invention;
fig. 2 is a top view of each Micro LED chip separated by the MESA region and the isolation trench in the Micro LED chip array integrated structure according to an embodiment of the present invention;
FIG. 3 is a top view of the positions of a first electrode and a second electrode in a Micro LED chip array integrated structure according to an embodiment of the invention;
FIG. 4 is a top view of a position of a first insulating layer and a position of an opening in a Micro LED chip array integrated structure according to an embodiment of the invention;
fig. 5 is a top view of positions of four first polarity driving lines in a Micro LED chip array integrated structure according to an embodiment of the invention;
FIG. 6 is a cross-sectional view of a Micro LED chip array integrated structure with four first polarity driving lines according to an embodiment of the present invention;
FIG. 7 is a top view of a location of a second insulating layer and a location of an opening in a Micro LED chip array integrated structure according to an embodiment of the invention;
FIG. 8 is a top view of four second polarity driving lines in an integrated Micro LED chip array structure according to an embodiment of the present invention;
FIG. 9 is a cross-sectional view of a Micro LED chip array integrated structure with four second polarity driving lines according to an embodiment of the present invention;
FIG. 10 is a top view of a location of a protective layer and a location of an opening in an integrated structure of a Micro LED chip array according to an embodiment of the invention;
FIG. 11 is a top view of the position of a first polarity electrode and a second polarity electrode in a Micro LED chip array integrated structure according to an embodiment of the invention;
FIG. 12 is a schematic cross-sectional view of a Micro LED chip array integrated structure according to another embodiment of the present invention;
FIG. 13 is a top view of each Micro LED chip separated by the MESA MESA region and the isolation trench in the Micro LED chip array integrated structure according to another embodiment of the present invention;
FIG. 14 is a top view of a Micro LED chip array integrated structure according to another embodiment of the present invention, wherein a first electrode and a second electrode are located;
the following detailed description will further illustrate the invention in conjunction with the above-described figures.
Detailed Description
To facilitate an understanding of the invention, the invention will now be described more fully with reference to the accompanying drawings. Several embodiments of the invention are presented in the drawings. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
It will be understood that when an element is referred to as being "secured to" another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present. The terms "vertical," "horizontal," "left," "right," and the like as used herein are for illustrative purposes only.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used in the description of the invention herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.
Example one
Referring to fig. 1 to fig. 14, a first embodiment of the invention is illustrated in an integrated structure of a Micro LED chip array, and for convenience of description, only portions related to the embodiment of the invention are shown, where the integrated structure of the Micro LED chip array provided in the embodiment of the invention includes:
the array of the Micro LED chips consists of Micro LED chips in X rows and Y columns;
a Y column first polarity driving line 33 connected to the first electrodes 20 of the X Micro LED chips in each column;
an X row second polarity driving line 35 connected to the second electrodes 21 of the Y Micro LED chips in each row;
y first polarity electrodes 43 connected to the first polarity driving line 33 of each column;
x second polarity electrodes 44 connected to the second polarity driving lines 35 of each row; and
an insulating layer between the first polarity driving line 33 and the second polarity driving line 35.
In the embodiment of the invention, the Micro LED chip array consists of X rows and Y columns of Micro LED chip arrays, wherein X is more than or equal to 1, Y is more than or equal to 1, and X and Y are not 1 at the same time. In particular, in an example of the present invention, as shown in fig. 2 to 5, X is 4, Y is 4, that is, the Micro LED chip array is a 4 × 4 array unit, it can be understood that in other embodiments of the present invention, the value X, Y may be other values, which are set according to actual use requirements, and is not limited herein.
Further, in an embodiment of the present invention, the Micro LED chip includes: the device comprises a substrate 11, an epitaxial layer positioned on the substrate 11 and a conductive electrode positioned on the epitaxial layer; the epitaxial layer includes a first semiconductor layer 12, a light emitting layer 13, and a second semiconductor layer 14 sequentially disposed on a substrate 11, a polarity of the first semiconductor layer 12 being opposite to a polarity of the second semiconductor layer 14; the conductive electrode includes a first electrode 20 electrically connected to the first semiconductor layer 12 and a second electrode 21 electrically connected to the second semiconductor layer 14.
The substrate 11 is a substrate for epitaxial layer growth, and has supporting and stabilizing functions. The substrate 11 may be an insulative substrate or a conductive substrate, wherein the material of the substrate 11 includes, but is not limited to, sapphire, aluminum nitride, gallium nitride, silicon, and silicon carbide. The substrate 11 may be a planar substrate 11 or a patterned substrate 11.
Further, an epitaxial layer may be formed on the substrate 11, wherein the epitaxial layer may be formed on the substrate 11 by growing on a Metal Organic Chemical Vapor Deposition (MOCVD) device, or may be bonded on the substrate 11 by a transparent bonding layer bonding method. As an example of the present invention, the epitaxial layer includes a first semiconductor layer 12, a light emitting layer 13, and a second semiconductor layer 14, which are sequentially provided on a substrate 11, wherein the polarity of the first semiconductor layer 12 is opposite to the polarity of the second semiconductor layer 14. In the present embodiment, the first semiconductor layer 12 is an N-type semiconductor layer, such as N-type gallium nitride (GaN); accordingly, the second semiconductor layer 14 is a P-type semiconductor layer, such as P-type gan. Note that the N-type semiconductor layer is a semiconductor layer formed by silicon doping or carbon doping, and the P-type semiconductor layer is a semiconductor layer formed by magnesium doping or zinc doping. Correspondingly, the first electrode 20 is an N electrode, and the second electrode 21 is a P electrode; the first polarity driving circuit 33 is a negative driving circuit, and the second polarity driving circuit 35 is a positive driving circuit; the first polarity electrode 43 is a negative electrode, and the second polarity electrode 44 is a positive electrode. It is understood that, in other embodiments of the present invention, the first semiconductor layer 12 may also be a P-type semiconductor layer, and the second semiconductor layer 14 may also be an N-type semiconductor layer, which is configured according to actual use requirements and is not limited in detail herein. At this time, correspondingly, the first electrode 20, the second electrode 21, the first polarity driving circuit 33, the second polarity driving circuit 35, the first polarity electrode 43, and the second polarity electrode 44 are correspondingly disposed according to the specific arrangement of the first semiconductor layer 12 and the second semiconductor layer 14, which is not described herein again.
Furthermore, the light emitting layer 13 includes a quantum well layer and a quantum barrier layer that are periodically and alternately grown in sequence, wherein the quantum well layer and the quantum barrier layer are periodically and alternately grown in sequence, so that at least one composite well can be formed in the light emitting layer 13, and the composite well can improve the light emitting efficiency of the light emitting diode chip. The light-emitting layer 13 may be made of gallium nitride material, gallium arsenide material, etc., and the element composition ratio of the semiconductor may be adjusted to emit light with desired wavelength, such as ultraviolet, blue, red, infrared, etc. Further, in one embodiment of the present invention, the side length of the light emitting layer 13 in the Micro LED chip is less than 100 um.
Furthermore, after the epitaxial layers are manufactured, the second semiconductor layer 14 and the light emitting layer 13 in the epitaxial layer on one side are etched by an etching process until the first semiconductor layer 12 is exposed, so that an MESA 15 is formed by etching, as shown in fig. 2, the first semiconductor layer 12, the light emitting layer 13 and the second semiconductor layer 14 are sequentially arranged at the MESA 15, and only the first semiconductor layer 12 is arranged at the adjacent position of the MESA 15. Correspondingly, the first electrode 20 is located on the exposed first semiconductor layer 12 and electrically connected to the first semiconductor layer 12, and the second electrode 21 is located on the MESA 15 and electrically connected to the second semiconductor layer 14, as shown in fig. 3.
Further, in a preferred embodiment of the present invention, each Micro LED chip uses the same substrate 11, that is, each epitaxial layer and the conductive electrode are respectively formed on the whole substrate 11, so that each Micro LED chip is formed. At this time, in order to realize isolation between the Micro LED chips, an isolation trench 16 for isolating adjacent Micro LED chips is disposed at a boundary of each Micro LED chip, and at this time, the isolation trench 16 isolates each Micro LED chip in the array of Micro LED chips, it is noted that the isolation trench 16 is disposed on the substrate 11, that is, the isolation trench 16 disposed on the substrate 11 isolates the first semiconductor layer 12 and the first electrode 20 from the adjacent second semiconductor layer 14 and the second electrode 21, which is specifically shown in fig. 2 as a top view of each Micro LED chip isolated from the MESA 15 region and the isolation trench 16 in the array of Micro LED chips. It should be noted that, as shown in fig. 2, each Micro LED chip is represented by a square, but it should be noted that, the square boundary is not represented by an actually distinguishable edge of the Micro LED chip, and the Micro LED chip may actually have other shapes and sizes, which are set according to actual use requirements, and are not specifically limited herein.
Further, in an embodiment of the present invention, the first electrodes 20 of the X Micro LED chips in each column are electrically connected to the first polarity driving circuit 33, so that the first electrodes 20 of the X Micro LED chips in each column are connected to form a common first pole through one first polarity driving circuit 33. The second electrodes 21 of the Y Micro LED chips in each row thereof are connected to a second polarity driving line 35, so that the second electrodes 21 of the Y Micro LED chips in each row are connected to a common second polarity through one second polarity driving line 35. Specifically, in this embodiment, the N electrodes of the 4 Micro LED chips in each column are connected to the negative driving circuit to form a common negative electrode, and the P electrodes of the 4 Micro LED chips in each row are connected to the positive driving circuit to form a common positive electrode. Specifically, since the first electrode 20 is connected to the first semiconductor layer 12, and the second electrode 21 is connected to the second semiconductor layer 14, so that the height of the first electrode 20 is lower than that of the second electrode 21, the first electrodes 20 of the Micro LED chips in each column are adjacent to each other without being blocked and are located on the same height plane, and the second electrode 21 with a higher height exists between the first electrodes 20 of the Micro LED chips in each row, at this time, by arranging the first electrodes 20 of the Micro LED chips in each column to be connected to the first polarity driving line 33, each first polarity driving line 33 can be directly laid on the first electrodes 20 of the Micro LED chips with the same height in each column.
In a preferred embodiment of the present invention, the isolation trench 16 is disposed between each column of adjacent Micro LED chips, and at this time, the isolation trench 16 does not separate each Micro LED chip, but separates each column of Micro LED chips, so that the first polarity driving line 33 does not need to pass through the isolation trench 16, and a reliability problem caused by cracks or uneven thickness of the first polarity driving line 33 at a slope of the isolation trench 16 is avoided, as shown in fig. 13.
In a preferred embodiment of the present invention, the first polarity driving circuit 33 may be directly disposed on the exposed first semiconductor layer 12 and electrically connected to the first semiconductor layer 12, so that a step of preparing the first electrodes 20 of the Micro LED chips first and then connecting the first electrodes to the common first electrode through the first polarity driving circuit 33 is omitted, and the first polarity driving circuit 33 replaces the first electrodes 20 of the Micro LED chips, so that the overall structure is simpler, as shown in fig. 12 and 14.
Further, the insulating layer is located between the first polarity driving line 33 and the second polarity driving line 35, and in one embodiment of the present invention, the insulating layer includes a first insulating layer 32 and a second insulating layer 34, wherein the first insulating layer 32 covers the array of Micro LED chips, and the first polarity driving line 33 passes through the first insulating layer 32 and is connected to the first electrode 20; the second insulating layer 34 covers the first insulating layer 32 and the first polarity driving line 33, and the second polarity driving line 35 is connected to the second electrode 21 through the second insulating layer 34 and the first insulating layer 32. At this time, the first insulating layer 32 is used to isolate the first electrode 20 from the second electrode 21, and the second insulating layer 34 is used to isolate the first polarity driving line 33 from the second polarity driving line 35, as shown in fig. 1, which is a top view of the insulating layer and the opening. Further, in a preferred embodiment of the present invention, the insulating layer may also have only one layer, and in this case, the insulating layer is the second insulating layer 34 described above, that is, the insulating layer covers the Micro LED chip array and the first polarity driving line 33, and the second polarity driving line 35 passes through the insulating layer and is connected to the second electrode 21.
Further, in an embodiment of the present invention, the first polarity electrodes 43 and the second polarity electrodes 44 are located on the non-light-emitting surface of the Micro LED chip array, and specifically, each of the first polarity electrodes 43 and each of the second polarity electrodes 44 are located on the above-mentioned structure, and the first polarity electrodes 43 are connected to the first polarity driving circuit 33, and the second polarity electrodes 44 are connected to the second polarity driving circuit 35. Further, a first polarity electrode 43 is disposed on the first polarity driving line of each column, a second polarity electrode 44 is disposed on the second polarity driving line of each row, and each of the first polarity electrodes 43 and the second polarity electrodes 44 are not simultaneously located on the same Micro LED chip, and each of the first polarity electrodes 43 and the second polarity electrodes 44 may be arranged in various staggered manners, which is flexibly disposed according to actual use requirements. In a preferred embodiment of the present invention, the first polarity electrodes 43 and the second polarity electrodes 44 are respectively arranged along two opposite corners of the array of Micro LED chips in a staggered manner, as shown in fig. 11, that is, at this time, the first polarity electrodes 43 and the second polarity electrodes 44 are respectively connected to one of the first polarity electrodes 43 and the second polarity electrodes 44 through a constant current regulator, so that the Micro LED chips corresponding to the row where the first polarity electrodes 43 are located and the row where the second polarity electrodes 44 are located can be lighted. The X × Y Micro LED chips in the array of Micro LED chips can be independently lighted and interconnected with the substrate through the X first polarity electrodes 43 and the Y second polarity electrodes 44.
Further, in an embodiment of the present invention, the Micro LED chip array integrated structure further includes a protection layer 40 covering the Micro LED chip array, the first polarity driving line 33 and the second polarity driving line 35; and the first polarity electrodes 43 pass through the protection layer 40 to be connected to the corresponding first polarity driving lines 33, and the second polarity electrodes 44 pass through the protection layer 40 to be connected to the corresponding second polarity driving lines 35, as shown in fig. 1, the protection layer 40 is used to protect the Micro LED chip array from moisture and dirt in the air.
Specifically, when the Micro LED chip array integrated structure is specifically prepared, the above 4 rows and 4 columns of Micro LED chip arrays are taken as an example:
firstly, a whole substrate 11 is respectively grown through Metal Organic Chemical Vapor Deposition (MOCVD) equipment to prepare epitaxial layers of the substrate, that is, a first semiconductor layer 12 (N-type semiconductor), a light emitting layer 13 and a second semiconductor layer 14 (P-type semiconductor) are sequentially grown on the substrate 11, an MESA 15 is formed by etching to expose a part of the first semiconductor layer 12, and an isolation trench 16 is formed on the substrate 11 by etching, so that each Micro LED chip (4 × 4 Micro LED chips) in a Micro LED chip array is isolated by the isolation trench 16, as shown in fig. 2. Further, in a preferred embodiment of the present invention, referring to fig. 13, the isolation trench 16 is disposed between adjacent Micro LED chips in each column, and at this time, the isolation trench 16 does not separate each Micro LED chip, but separates the Micro LED chips in each column, so that the first polarity driving circuit 33 manufactured subsequently does not need to pass through the isolation trench 16, and the reliability problem caused by cracks or uneven thickness of the first polarity driving circuit 33 at the slope of the isolation trench 16 is avoided.
Further, a first electrode 20(N electrode) electrically connected to the first semiconductor layer 12 is disposed at a position where the first semiconductor layer 12 is exposed, and a second electrode 21(P electrode) electrically connected to the second semiconductor layer 14 is disposed at a position where the MESA 15 is MESA, so that an array of Micro LED chips forming 4 rows and 4 columns is prepared, as shown in fig. 3. Wherein, in a preferred embodiment of the present invention, it may also be possible not to provide the first electrode 20.
Further, a first insulating layer 32 is disposed on the array of Micro LED chips, at this time, the first insulating layer 32 covers the array of Micro LED chips on the whole surface, and openings are formed on the first insulating layer 32, specifically, 16 first electrode openings 30 (N-pole openings) and 16 second electrode openings 31 (P-pole openings) are formed, wherein 16 first electrode openings 30 are disposed on corresponding positions of the first electrodes 20 of each Micro LED chip, and 16 second electrode openings 31 are disposed on corresponding positions of the second electrodes 21 of each Micro LED chip, so that a portion of the first electrodes 20 and the second electrodes 21 of each Micro LED chip can be exposed, as shown in fig. 4.
Further, a first polarity driving circuit 33 (negative driving circuit) is disposed on the first insulating layer 32 at a position corresponding to the first electrode 20 of each row of each Micro LED chip, that is, 4 rows of first polarity driving circuits 33 are disposed, at this time, the first electrodes 20 in the 4 Micro LEDs in each row are electrically connected to one first electrode 20 driving circuit through the 4 first electrode openings 30, that is, the first polarity driving circuit 33 is connected to the first electrodes 20 through the first insulating layer 32, so as to form 4 common first poles (common negative poles) in total, as shown in fig. 5 and 6. In a preferred embodiment of the present invention, when the first electrode 20 is not disposed, the driving circuit of the first electrode 20 may also be directly electrically connected to the first semiconductor layer 12, so that a step of first preparing the first electrodes 20 of the Micro LED chips and then connecting the first electrodes 20 to the common first electrode through the first polarity driving circuit 33 is omitted, and the first polarity driving circuit 33 replaces the first electrodes 20 of the Micro LED chips, so that the overall structure is simpler, as shown in fig. 12.
Further, a second insulating layer 34 is disposed on the above-mentioned structure, at this time, the entire surface of the second insulating layer 34 covers the first insulating layer 32 and the first polarity driving circuit 33, and at the same time, the second insulating layer 34 is formed with openings, specifically, 16 second electrode openings 31 and 4 first polarity electrode openings 41 (negative electrode openings) are formed, wherein 16 second electrode openings 31 are disposed at positions corresponding to the second electrodes 21 of each Micro LED chip, so that a portion of the second electrodes 21 of each Micro LED chip can be exposed, and 4 first polarity electrode openings 41 are disposed on 4 first polarity driving circuits 33, so that each first polarity driving circuit 33 exposes a portion of the area, specifically, the 4 first polarity electrode openings 41 in the present invention are sequentially disposed at diagonal positions of the array of Micro LED chips, as shown in fig. 7.
Further, a second polarity driving circuit 35 (positive electrode driving circuit) is disposed on the second insulating layer 34 at a position corresponding to the second electrode 21 of each row of the Micro LED chips, that is, 4 rows of the second polarity driving circuits 35 are disposed, at this time, the second electrodes 21 in the 4 Micro LEDs in each row are electrically connected to one second electrode 21 driving circuit through the 4 second electrode openings 31, that is, the second polarity driving circuit 35 is connected to the second electrode 21 through the first insulating layer 32 and the second insulating layer 34, so as to form 4 common second electrodes (common positive electrodes) together, as specifically shown in fig. 8 and 9.
Further, in a preferred embodiment of the present invention, the second insulating layer 34 may be directly disposed on the Micro LED chip array without the first insulating layer 32, that is, the second insulating layer 34 covers the Micro LED chip array and the first polarity driving line 33, and the second polarity driving line 35 passes through the second insulating layer 34 and is connected to the second electrode 21, so that the second insulating layer 34 can electrically isolate the first polarity driving line 33 from the second polarity driving line 35, which is shown in fig. 12.
Further, a protection layer 40 is disposed on the above structure, at this time, the whole surface of the protection layer 40 covers the second insulation layer 34 and the second polarity driving circuit 35, and openings are formed on the protection layer 40, specifically, 4 first polarity electrode openings 41 and 4 second polarity electrode openings 42 (positive electrode openings) are formed, wherein 4 first polarity electrode openings 41 correspond to the first polarity electrode openings 41, and 4 second polarity electrode openings 42 are located on the 4 second polarity driving circuits 35, so that each second polarity driving circuit 35 exposes a partial region, specifically, the 4 second polarity electrode openings 42 in the present invention are sequentially located at diagonal positions of the Micro LED chip array and are staggered with the 4 first polarity electrode openings 41, as shown in fig. 10.
Further, the first polarity electrodes 43 (negative electrodes) are disposed on the protection layer 40 at positions corresponding to the first polarity electrode openings 41, so that the 4 first polarity electrodes 43 are electrically connected to the 4 driving circuits of the first electrodes 20 through the 4 first polarity electrode openings 41, that is, the first polarity electrodes 43 pass through the protection layer 40 and are connected to the corresponding driving circuits 33 of the first polarity. Accordingly, the second polarity electrode 44 (positive electrode) is disposed on the protection layer 40 at a position corresponding to the second polarity electrode opening 42, so that the 4 second polarity electrodes 44 are electrically connected to the 4 driving circuits of the second electrode 21 through the 4 second polarity electrode openings 42, that is, the second polarity electrodes 44 penetrate through the protection layer 40 and are connected to the corresponding second polarity driving circuits 35, as shown in fig. 11. The protective layer 40 is now used to protect the array of Micro LED chips from moisture and dirt in the air.
Correspondingly, at this time, the first polarity driving circuit 33 and the second polarity driving circuit 35 are integrated at the core particle end, so that all 16 Micro LED chips of the Micro LED chip array can be respectively lighted through the 4 first polarity electrodes 43 and the 4 second polarity electrodes 44, and specifically, the Micro LED chips corresponding to the row where the first polarity electrode 43 is located and the row where the second polarity electrode 44 is located can be lighted by respectively connecting one of the first polarity electrodes 43 and the second polarity electrodes 44 through the constant current voltage stabilization source. The sum of the 16 Micro LED chips can be used as the minimum cutting, transferring and interconnecting unit. The size of a single Micro LED chip of which the cutting, transferring and interconnecting units are at least 16 times is large, the problems that the transferring cutting precision is difficult to control and the core grain picking difficulty is large due to undersize core grains of the Micro LED chip are solved, the transferring frequency is greatly reduced, and the production cost is reduced.
In summary, in the Micro LED chip array integrated structure in the above embodiment of the invention, the Micro LED chip array composed of the array of the Micro LED chips in X rows and Y columns is disposed, and each column is disposed with the first polarity driving circuit connected to the first electrode, each row is disposed with the second polarity driving circuit connected to the second electrode, and the first polarity driving circuit is connected to the first polarity electrode, and the second polarity driving circuit is connected to the second polarity electrode, so that the existing multiple Micro LED chips and the driving circuit that originally needs to be implemented at the die bonding end are integrated at the core particle end to form the Micro LED chip array integrated structure, and the first polarity driving circuit and the second polarity driving circuit are integrated at the core particle end, so that all the X × Y Micro LED chips of the Micro LED chip array can be respectively lighted by the X first polarity electrodes and the Y second polarity electrodes, therefore, the Micro LED chip array can be used as a minimum cutting, transferring and interconnecting unit, so that the size of the minimum cutting, transferring and interconnecting unit can reach the magnitude order which can be realized by the existing process level, and the problems of difficult control of transferring and cutting precision, low transferring speed and low transferring yield caused by the undersize of the existing Micro LED chip are solved; meanwhile, the problems of large picking difficulty and huge transfer of Micro LED chips are avoided, so that the production cost of both the core particle end and the die bonding end can be greatly reduced; meanwhile, the transfer frequency of the Micro LED chip array is greatly reduced, so that the production cost is reduced.
In the description herein, references to the description of the term "one embodiment," "some embodiments," "an example," "a specific example," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
The above-mentioned embodiments only express several embodiments of the present invention, and the description thereof is more specific and detailed, but not construed as limiting the scope of the present invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention. Therefore, the protection scope of the present patent shall be subject to the appended claims.
Claims (10)
1. A Micro LED chip array integrated structure, comprising:
the Micro LED chip array consists of Micro LED chips in X rows and Y columns;
the Y-column first polarity driving circuit is connected with the first electrodes of the X Micro LED chips in each column;
the X-row second polarity driving circuit is connected with second electrodes of the Y Micro LED chips in each row;
y first polarity electrodes connected to the first polarity driving lines of each column;
x second polarity electrodes connected to the second polarity driving lines of each row; and
an insulating layer between the first polarity driving line and the second polarity driving line.
2. The Micro LED chip array integrated structure of claim 1, wherein said Micro LED chip comprises:
the device comprises a substrate, an epitaxial layer positioned on the substrate and a conductive electrode positioned on the epitaxial layer;
the epitaxial layer comprises a first semiconductor layer, a light emitting layer and a second semiconductor layer which are sequentially arranged on the substrate, and the polarity of the first semiconductor layer is opposite to that of the second semiconductor layer;
the conductive electrode includes a first electrode electrically connected to the first semiconductor layer and a second electrode electrically connected to the second semiconductor layer.
3. The Micro LED chip array integrated structure of claim 1, wherein X is greater than or equal to 1, Y is greater than or equal to 1, and X and Y are not simultaneously 1.
4. The Micro LED chip array integrated structure of claim 1, wherein an isolation trench is disposed at a boundary of each of the Micro LED chips for isolating adjacent Micro LED chips.
5. A Micro LED chip array integrated structure according to claim 1, wherein the insulating layer comprises a first insulating layer and a second insulating layer;
the first insulating layer covers the array of Micro LED chips, and the first polarity driving circuit penetrates through the first insulating layer to be connected with the first electrode;
the second insulating layer covers the first insulating layer and the first polarity driving circuit, and the second polarity driving circuit passes through the second insulating layer and the first insulating layer to be connected with the second electrode.
6. A Micro LED chip array integrated structure according to claim 1, further comprising a protective layer covering the array of Micro LED chips, the first polarity drive line, and the second polarity drive line;
the first polarity electrodes penetrate through the protective layer and are connected with corresponding first polarity driving lines, and the second polarity electrodes penetrate through the protective layer and are connected with corresponding second polarity driving lines.
7. The Micro LED chip array integrated structure of claim 1, wherein the first and second polarity electrodes are located on a non-light-emitting surface of the Micro LED chip array.
8. The Micro LED chip array integrated structure of claim 1, wherein each of the first polarity electrodes and each of the second polarity electrodes are respectively staggered along two opposite corners of the Micro LED chip array.
9. A Micro LED chip array integrated structure as in claim 2, wherein the side length of the light emitting layer in the Micro LED chip is less than 100 um.
10. A Micro LED chip array integrated structure according to claim 4, wherein the isolation trench is provided between each column of adjacent Micro LED chips.
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