CN114759021A - Touch sensor array based on silicon-based Micro LED and preparation method thereof - Google Patents
Touch sensor array based on silicon-based Micro LED and preparation method thereof Download PDFInfo
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Abstract
The invention provides a touch sensor array based on a silicon-based micro LED and a preparation method thereof, wherein the touch sensor array comprises touch sensing device units which are regularly distributed, the touch sensing device units are used for realizing a touch sensing function, and the distribution density of the touch sensing device units determines the resolution of a touch sensor. The silicon-based epitaxial wafer is adopted, so that the direct coupling of light is reduced, and the background noise of the sensor is reduced; by utilizing the MEMS technology, the finally obtained device has small volume and light weight, can reduce the production cost through batch production, and is beneficial to the application and popularization of the invention; based on the photoelectric detection principle, the touch sensor array has the advantages of high resolution and sensitivity, high response speed and strong anti-electromagnetic interference capability; the size of the touch sensor array can be scaled according to the preparation process capability, and the touch sensor array can realize the touch sensing function with high resolution through large-scale high-density integration.
Description
Technical Field
The invention relates to the technical field of Micro-electromechanical systems, in particular to a touch sensor array based on a silicon-based Micro LED and a preparation method thereof.
Background
Haptic sensations are an important way of biologically perceiving external information, and a tactile sensor is a device that measures information generated from physical interactions with its environment. Tactile sensors are typically modeled in the biological sense of skin contact, which is the ability to detect stimuli caused by mechanical stimuli, temperature and pain (although pain sensing is not common in artificial tactile sensors).
Tactile sensors are sensors used in robots to mimic tactile functions, computer hardware and security systems, with a common application of tactile sensors in touch screen devices on cell phones and computers. In recent years, the application requirements of intelligent robots in the fields of medicine, household appliances, manufacturing, food, traffic and the like are increased, and the research and development of novel touch sensors are promoted. The photoelectric touch sensor has the advantages of high sensitivity, high response speed and strong anti-electromagnetic interference capability, and is combined with an advanced MEMS (micro electro mechanical System) manufacturing technology, so that the integration of all parts of the photoelectric touch sensor on one chip is possible, the miniaturization and the array of the touch sensor can be realized, and the improvement of the perception resolution is facilitated. In addition, more functions are integrated on the touch sensor chip based on the compatible technology, and the future development trend of the sensor is met.
In view of the above, it is necessary to provide a touch sensor array based on a silicon-based Micro LED and a manufacturing method thereof, so as to satisfy the integration of the touch sensor array and the high density and effectively improve the sensing resolution of the touch sensor.
Disclosure of Invention
In view of the above disadvantages of the prior art, an object of the present invention is to provide a touch sensor array based on silicon-based Micro LEDs and a method for manufacturing the same, so as to satisfy the requirements of arraying and high-density integration of touch sensors and effectively improve the sensing resolution of the touch sensors.
To achieve the above and other related objects, the present invention provides a silicon-based Micro LED-based touch sensor array, including: the touch sensing device units are distributed regularly;
the touch sensing device unit comprises two Micro LEDs, wherein one Micro LED serves as a Micro LED light source, and the other Micro LED serves as a Micro LED detector;
the Micro LED light source comprises:
the light source active layer sequentially comprises a light source P-type GaN layer, a light source multi-quantum well layer and a light source N-type GaN layer from bottom to top;
the light source positive electrode is positioned below the light source P-type GaN layer;
a light source negative electrode directly contacting the lower side of the light source N-type GaN layer, and having an interval between platforms composed of the light source P-type GaN layer and the light source multiple quantum well layer;
the planarization dielectric layer covers the lower parts of the light source positive electrode (8) and the light source negative electrode (9);
the light source positive bonding electrode (10) is positioned below the light source positive electrode and comprises two parts, a columnar part penetrates through the planarization dielectric layer, and the other part covers the surface of the planarization dielectric layer;
the light source negative bonding electrode is positioned below the light source negative electrode and comprises two parts, wherein the columnar part penetrates through the planarization dielectric layer, and the other part covers the surface of the planarization dielectric layer;
the light source unintentionally doped GaN layer and the light source material buffer layer are sequentially positioned above the light source N-type GaN layer;
the Micro LED detector has the same structure as the Micro LED light source, and is positioned on the side edge of the Micro LED light source;
the tactile sensing device unit further includes:
the silicon substrate layer is positioned above the light source material buffer layer and the detector material buffer layer, 2 through holes are formed in the silicon substrate layer and are respectively positioned above the active layers of the two Micro LEDs, one through hole exposes the Micro LED light source, the other through hole exposes the Micro LED detector, and part of light sources emitted by the Micro LED light source (3) are reflected to the Micro LED detector (4) through the reflecting layer (30);
the euphotic layer is used for filling the through holes on the silicon substrate layer and covering the upper surface of the silicon substrate layer;
and the visible light reflecting layer and the contact protection layer are sequentially positioned above the euphotic layer.
Optionally, the tactile sensing device unit is bonded on the substrate through a substrate bonding metal, a circuit unit is contained on the surface of the substrate or inside the substrate, and the circuit unit is used for processing and analyzing the output signal of the Micro LED.
Optionally, an isolation groove is arranged between the Micro LED light source and the Micro LED detector, and isolation metal is arranged in the isolation groove.
Optionally, the touch sensor array based on the silicon-based Micro LEDs further includes pulse sensing device units, the number of the pulse sensing device units is less than that of the touch sensing device units, and the pulse sensing device units are distributed in the touch sensor array in order; the structure of the pulse sensing device unit is different from that of the tactile sensing device unit in that the pulse sensing device unit does not include the visible light reflecting layer in the tactile sensing device unit.
Optionally, the pulse sensing device unit is bonded on the substrate through the substrate bonding metal, a circuit unit is contained on the surface or inside of the substrate, and the circuit unit is used for processing and analyzing the output signal of the Micro LED.
Optionally, the maximum width of the light source multiple quantum well layer is less than 100 μm.
Optionally, the through hole formed in the silicon substrate layer is large in top and small in bottom, and the cross section of the through hole is rectangular or circular.
Optionally, the visible light reflecting layer is made of metal Ag, and the contact protection layer is made of resin.
The invention also provides a preparation method of the touch sensor array based on the silicon-based Micro LED, which comprises the following steps:
s1: providing a silicon-based gallium nitride LED epitaxial wafer, wherein the silicon-based gallium nitride LED epitaxial wafer sequentially comprises a silicon substrate, a material buffer layer, an unintentional doped GaN material layer, an N-type GaN material layer, a multi-quantum well material layer and a P-type GaN material layer from bottom to top;
s2: photoetching and etching the front side of the silicon-based gallium nitride LED epitaxial wafer until the silicon substrate stops to form isolation grooves among different regions, photoetching and etching the front side of the silicon-based gallium nitride LED epitaxial wafer until the N-type GaN layer stops, and forming active layers of different Micro LEDs together with the N-type GaN layer;
s3: forming a positive electrode of the Micro LED on the front surface of the silicon-based gallium nitride LED epitaxial wafer;
s4: forming a negative electrode of the Micro LED on the front surface of the silicon-based gallium nitride LED epitaxial wafer;
s5: forming the planarization dielectric layer on the front surface of the silicon-based gallium nitride LED epitaxial wafer, forming columnar parts of a positive bonding electrode and a negative bonding electrode by opening holes, and forming a complete positive bonding electrode and a complete negative bonding electrode on the surface of the planarization dielectric layer;
s6: inverting the structure, and photoetching and etching the through hole on the silicon substrate to form a silicon substrate layer;
s7: coating a light-transmitting material higher than the silicon substrate layer on the surface of the structure and in the through hole to form the light-transmitting layer;
s8: and sequentially forming the visible light reflecting layer and the contact protection layer above the euphotic layer.
Optionally, in step S6, after the positive bonding electrode and the negative bonding electrode are formed, the method further includes a step of bonding the resulting structure on a substrate through a substrate bonding metal, where a surface or an interior of the substrate includes a circuit unit, and the circuit unit is configured to process and analyze an output signal of the Micro LED.
As described above, the touch sensor array based on the silicon-based Micro LED and the preparation method thereof of the present invention have the following beneficial effects: 1. according to the touch sensor array based on the silicon-based Micro LED, the silicon-based epitaxial wafer is adopted, so that the direct coupling of light is reduced, and the background noise of the sensor is reduced; 2. the touch sensor array based on the silicon-based Micro LED utilizes the MEMS technology, and finally obtained devices are small in size and light in weight, can reduce production cost through batch production, and are beneficial to application and popularization; 3. based on the photoelectric detection principle, the touch sensor array has the advantages of high resolution and sensitivity, high response speed and strong anti-electromagnetic interference capability; 4. the size of the touch sensor array can be scaled according to the preparation process capability, and the touch sensor array can realize the touch sensing function with high resolution through large-scale high-density integration.
Drawings
Fig. 1 shows a schematic structural diagram of a silicon-based Micro LED-based touch sensor array according to the present invention.
Fig. 2 is a schematic cross-sectional view of a tactile sensing device cell of the present invention.
Fig. 3 to 4 are schematic views showing the operation of the tactile sensing device unit of the present invention.
Fig. 5 is a schematic cross-sectional view of a pulse sensing device unit according to the present invention.
Fig. 6 to 7 are schematic views illustrating the operation of the pulse sensor unit according to the present invention.
FIG. 8 is a schematic sectional view taken along the line A-A' of a tactile sensor device cell in which a through-hole of a silicon substrate layer of the present invention is rectangular.
FIG. 9 is a schematic sectional view taken along the line A-A' of a tactile sensor device unit in which a through hole of a silicon substrate layer of the present invention is circular.
Fig. 10 is a schematic flow chart illustrating a method for manufacturing a silicon-based Micro LED-based touch sensor array according to the present invention.
Fig. 11 to 19 are schematic structural diagrams showing steps of the method for manufacturing a silicon-based Micro LED-based touch sensor array according to the present invention.
Description of the element reference
100 silicon substrate
200 buffer layer
300 layer of unintentionally doped GaN material
400N type GaN material layer
500 multiple quantum well material layers
600P type GaN material layer
1 tactile sensing device unit
2 pulse sensing device unit
3 Micro LED light source
4 Micro LED detector
5 light source P type GaN layer
6 light source multi-quantum well layer
7 light source N-type GaN layer
8 light source positive electrode
9 negative electrode of light source
10 light source positive bonding electrode
11 light source negative bonding electrode
12 light source unintentionally doped GaN layer
13 light source material buffer layer
14P-type GaN layer of detector
15-detector multi-quantum well layer
N-type GaN layer of 16-detector
17 positive electrode of detector
Negative electrode of 18 detector
19 positive bonding electrode of detector
20 negative bonding electrode of detector
21 planarizing the dielectric layer
22 substrate
23 substrate bonding metal
24 via metal
25 circuit unit
26 unintended doped GaN layer of detector
27 buffer layer of detector material
28 silicon substrate layer
29 light-transmitting layer
30 visible light reflecting layer
31 contact protection layer
32 skin (Perkin Elmer)
33 isolating metal
34 light ray
Detailed Description
The embodiments of the present invention are described below with reference to specific embodiments, and other advantages and effects of the present invention will be easily understood by those skilled in the art from the disclosure of the present specification. The invention is capable of other and different embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the spirit and scope of the present invention.
Please refer to fig. 1 to 19. It should be noted that the drawings provided in the present embodiment are only for schematically illustrating the basic idea of the present invention, and the drawings only show the components related to the present invention rather than being drawn according to the number, shape and size of the components in actual implementation, and the type, quantity and proportion of each component in actual implementation may be arbitrarily changed, and the layout of the components may be more complicated.
Example one
As shown in fig. 1 to 2, the present embodiment provides a silicon-based Micro LED-based touch sensor array (as shown in fig. 1), which includes: the tactile sensing device units 1 are regularly distributed (as shown in fig. 1 and 2);
the touch sensing device unit 1 comprises two Micro LEDs, wherein one Micro LED is used as a Micro LED light source 3, and the other Micro LED is used as a Micro LED detector 4 (shown in FIG. 2);
the Micro LED light source 3 includes:
the light source active layer sequentially comprises a light source P-type GaN layer 5, a light source multi-quantum well layer 6 and a light source N-type GaN layer 7 from bottom to top;
a light source positive electrode 8 positioned below the light source P-type GaN layer 5;
a light source negative electrode 9 directly contacting the lower side of the light source N-type GaN layer 7 and having an interval between the platforms composed of the light source P-type GaN layer 5 and the light source multiple quantum well layer 6;
the planarization medium layer 21 covers the lower parts of the light source positive electrode 8 and the light source negative electrode 9;
the light source positive bonding electrode 10 is positioned below the light source positive electrode 8, the light source positive bonding electrode 10 comprises two parts, a columnar part penetrates through the planarization dielectric layer 21, and the other part covers the surface of the planarization dielectric layer 21;
the light source negative bonding electrode 11 is positioned below the light source negative electrode 9, the light source negative bonding electrode 9 comprises two parts, a columnar part penetrates through the planarization dielectric layer 21, and the other part covers the surface of the planarization dielectric layer 21;
the light source unintentionally doped GaN layer 12 and the light source material buffer layer 13 are sequentially positioned above the light source N-type GaN layer 7;
the Micro LED detector 4 has the same structure as the Micro LED light source 3, and the Micro LED detector 4 is positioned on the side edge of the Micro LED light source 3; specifically, the Micro LED detector 4 includes:
the detector comprises a detector active layer, a detector active layer and a detector active layer, wherein the detector active layer sequentially comprises a detector P-type GaN layer 14, a detector multi-quantum well layer 15 and a detector N-type GaN layer 16 from bottom to top;
a detector positive electrode 17 positioned below the detector P-type GaN layer 14;
a detector negative electrode 18 directly contacting the lower side of the detector N-type GaN layer 16, and having an interval between the platforms composed of the detector P-type GaN layer 14 and the detector multiple quantum well layer 15;
the flattening medium layer 21 covers the lower parts of the detector positive electrode 17 and the detector negative electrode 18;
the detector positive bonding electrode 19 is positioned below the detector positive electrode 17, the detector positive bonding electrode 17 comprises two parts, a columnar part penetrates through the planarization dielectric layer 21, and the other part covers the surface of the planarization dielectric layer 21;
the detector negative bonding electrode 20 is positioned below the detector negative electrode 18, the detector negative bonding electrode 20 comprises two parts, a columnar part penetrates through the planarization dielectric layer 21, and the other part covers the surface of the planarization dielectric layer 21;
the detector is provided with a detector unintentionally doped GaN layer 26 and a detector material buffer layer 27 which are sequentially positioned above the detector N-type GaN layer 16;
the tactile sensing device unit 1 further includes:
a silicon substrate layer 28 located above the light source material buffer layer 13 and the detector material buffer layer 27, wherein the silicon substrate layer 28 is provided with 2 through holes respectively located above the active layers of the two Micro LEDs, one of the through holes exposes the Micro LED light source 3, the other through hole exposes the Micro LED detector 4, and part of light emitted from the Micro LED light source 3 is reflected to the Micro LED detector 4 through the reflection layer 30;
the light transmitting layer 29 is used for filling the through holes of the silicon substrate layer 28 and covering the upper surface of the silicon substrate layer 28;
the visible light reflecting layer 30 and the contact protection layer 31 are sequentially located above the light transmitting layer 29. The touch sensor array based on the silicon-based Micro LED adopts a silicon-based epitaxial wafer, so that direct coupling of light is reduced, and background noise of the sensor is reduced; by utilizing the MEMS technology, the finally obtained device has small volume and light weight, can reduce the production cost through batch production, and is beneficial to the application and popularization of the invention; the touch sensor array based on the silicon-based Micro LED is based on a photoelectric detection principle and has the advantages of high resolution and sensitivity, high response speed and strong anti-electromagnetic interference capability; the size of the touch sensor array based on the silicon-based Micro LED can be scaled according to the preparation process capability, and the touch sensor array based on the silicon-based Micro LED can realize the touch sensing function with high resolution through large-scale high-density integration.
The Micro LED detector 4 and the Micro LED light source 3 have the same structure, and the size and the shape of the Micro LED detector and the Micro LED light source may be the same or different, and may be set according to the performance of the touch sensor array, which is not limited herein.
In this embodiment, the Micro LED light source 3 and the Micro LED detector 4 employ the same multi-quantum well PN junction, and the physical mechanism is that an overlap region exists between the emission spectrum and the detection of the multi-quantum well PN junction. When the Micro LED light source 3 emits light, the Micro LED light source 3 is loaded with forward bias, namely the voltage of the light source positive electrode 8 is higher than that of the light source negative electrode 9, the light source P-type GaN layer 5 and the light source N-type GaN layer 7 inject holes and electrons into the light source multi-quantum well layer 6 respectively, the holes and the electrons can be concentrated in the light source multi-quantum well layer 6 to generate radiation recombination due to the limiting effect of the multi-quantum well on the holes and the electrons, light rays with the wavelength corresponding to the multi-quantum well structure are emitted, and the central wavelength of the Micro LED light source 3 can be changed by adjusting the width or the height of a multi-quantum well barrier or a potential well.
When the Micro LED detector 4 detects the intensity of a visible light signal, the Micro LED detector 4 is loaded with reverse bias or zero bias, that is, the voltage of the positive electrode 17 of the detector is lower than or equal to that of the negative electrode 18 of the detector, and partial photon-generated carriers generated in the P-type GaN layer 14, the multiple quantum well layer 15 and the N-type GaN layer 16 of the detector are effectively separated under the action of an electric field to form photon-generated current, and the intensity of the visible light can be deduced through the magnitude of the photon-generated current because the photon-generated current is related to the intensity of the visible light received by the Micro LED detector 4.
Based on the above, the operation principle of the tactile sensor device unit 1 is as follows: part of light 34 emitted by the Micro LED light source 3 is reflected to the Micro LED detector 4 through the visible light reflecting layer 30 by using the through hole on the silicon substrate layer 28 as a light channel, and when no external force is applied, the optical coupling ratio from the Micro LED light source 3 to the Micro LED detector 4 is fixed, and the photo-generated current is also constant (as shown in fig. 3); when an external force is applied, the visible light reflecting layer 30 is bent, the amount of bending is related to the applied external force, and meanwhile, due to the change of the reflection path, the optical coupling ratio from the Micro LED light source 3 to the Micro LED detector 4 is changed, and finally, the photo-generated current of the Micro LED detector 4 is changed, and the magnitude of the external force can be inferred through the change of the photo-generated current (as shown in fig. 4). The touch sensing device unit 1 is a main unit of the touch sensor array based on the silicon-based Micro LED, and is used for realizing a touch sensing function, and the distribution density of the touch sensing device unit determines the resolution of touch sensing. As shown in fig. 2, as an example, the tactile sensing device unit 1 is bonded on a substrate 22 through a substrate bonding metal 23, a circuit unit 25 is included on a surface or inside of the substrate 22, and the circuit unit 25 is used for processing and analyzing output signals of the Micro LED, and in this embodiment, the tactile sensing device unit is mainly used for processing and analyzing output signals of the Micro LED light source 3 and the Micro LED detector 4.
Here, it should be noted that the substrate bonding metal 23 is electrically connected to the light source positive electrode 8 and the light source negative electrode 9 of the Micro LED light source 3 and the detector positive electrode 8 and the detector negative electrode 9 of the Micro LED detector 4, respectively, and is bonded to the substrate 22. When the circuit unit 25 is located inside the substrate 22, it is necessary to electrically connect the substrate bonding metal 23 through a through hole metal 24 to electrically connect the tactile sensing device unit 1 and the circuit unit 25, so as to control the Micro LED light source 3 and the Micro LED detector 4 through the circuit unit 25.
As shown in fig. 2, as an example, an isolation groove is provided between the Micro LED light source 3 and the Micro LED detector 4, an isolation metal 33 is provided in the isolation groove, and the isolation metal 33 is surrounded by a planarization dielectric layer 21, so as to reduce optical crosstalk between the Micro LED light source 3 and the Micro LED detector 4 and avoid affecting the performance of the tactile sensing device unit 1.
As shown in fig. 1 and fig. 5, as an example, the tactile sensor array based on silicon-based Micro LEDs further includes pulse sensing device units 2, where the number of the pulse sensing device units 2 is less than that of the tactile sensing device units 1, and the pulse sensing device units are distributed in the tactile sensor array (as shown in fig. 1); the structure of the pulse sensing device unit 2 is different from that of the tactile sensing device unit 1 in that the pulse sensing device unit does not include the visible light reflecting layer in the tactile sensing device unit (as shown in fig. 5); specifically, the pulse sensing device unit 2 comprises two Micro LEDs, wherein one Micro LED is a Micro LED light source 3, and the other Micro LED is a Micro LED detector 4; the Micro LED light source 3 includes: the light source active layer sequentially comprises a light source P-type GaN layer 5, a light source multi-quantum well layer 6 and a light source N-type GaN layer 7 from bottom to top; a light source positive electrode 8 positioned below the light source P-type GaN layer 5; a light source negative electrode 9 directly contacting the lower side of the light source N-type GaN layer 7 and having an interval between the platforms composed of the light source P-type GaN layer 5 and the light source multiple quantum well layer 6; the planarization medium layer 21 covers the lower parts of the light source positive electrode 8 and the light source negative electrode 9; the light source positive bonding electrode (10) is positioned below the light source positive electrode 8, the light source positive bonding electrode 10 comprises two parts, a columnar part penetrates through the planarization dielectric layer 21, and the other part covers the surface of the planarization dielectric layer 21; the light source negative bonding electrode 11 is positioned below the light source negative electrode 9, the light source negative bonding electrode 9 comprises two parts, a columnar part penetrates through the planarization dielectric layer 21, and the other part covers the surface of the planarization dielectric layer 21; the light source unintentionally doped GaN layer 12 and the light source material buffer layer 13 are sequentially positioned above the light source N-type GaN layer 7; the Micro LED detector 4 has the same structure as the Micro LED light source 3, and the Micro LED detector 4 is positioned on the side edge of the Micro LED light source 3; the tactile sensing device unit 1 further includes: a silicon substrate layer 28 located above the light source material buffer layer 13, wherein through holes are formed in the silicon substrate layer 28, the number of the through holes is 2, the through holes are respectively located above the active layers of the two Micro LEDs, one through hole can expose the Micro LED light source 3, and the other through hole exposes the Micro LED detector 4; the light-transmitting layer 29 is used for filling the through holes of the silicon substrate layer 28 and covering the upper surface of the silicon substrate layer 28; and a contact protective layer 31 over the light-transmitting layer 29.
The pulse sensing device unit 2 is used for detecting a pulse signal contacting the skin and is used as a unit of an auxiliary function of the touch sensor array based on the silicon-based Micro LED; the touch sensor array based on the silicon-based Micro LED can not only realize touch sensing, but also monitor pulse signals of skin, and can be used as a state indicator lamp due to the fact that the Micro LED of the pulse sensing device unit can emit light.
The working principle of the pulse sensing device unit 2 is as follows: when the pulse sensing device unit 2 is not touched by skin, most of the light 34 emitted by the Micro LED light source 3 is emitted out of the chip through the through hole of the silicon substrate layer 28, and only a small amount of light 34 is scattered by the environment and returned to the Micro LED detector 4 (as shown in fig. 6); when the skin touches, part of the light 34 will be reflected by the skin 32 and return to the area of the Micro LED detector 4 (as shown in fig. 7), and since the reflectivity of the skin 32 to the incident light is affected by the contraction and relaxation of blood vessels, so that the reflected light carries pulse information, the frequency or variation curve of the pulse can be obtained through the photocurrent of the Micro LED detector 4.
As shown in fig. 5, the pulse sensing device unit 2 is bonded to the substrate 22 through the substrate bonding metal 23, a circuit unit 25 is disposed on a surface or inside of the substrate 22, and the circuit unit 25 is used for processing and analyzing output signals of the Micro LED light source 3 and the Micro LED detector 4.
Here, it should be noted that there is a difference in the specific form of the circuit unit 25 between the tactile sensing device unit 1 and the pulse sensing device unit 2.
As an example, the maximum width of the light source multiple quantum well layer 6 is less than 100 μm.
It should be noted here that, in the light source active layer, the area of the light source N-type GaN layer 7 is larger than that of the light source P-type GaN layer 5 and the light source multiple quantum well layer 6, and the light source P-type GaN layer 5 and the light source multiple quantum well layer 6 are topographically mesas or protrusions on the light source N-type GaN layer 7.
As shown in fig. 8 to fig. 9, as an example, the through holes disposed on the silicon substrate layer 28 have a large top and a small bottom, the cross section of the through holes is rectangular or circular, the through holes are respectively located right above the light source multiple quantum well layer 6 and the detector multiple quantum well layer 15, the shapes of the through holes may be the same or different, and are selected according to practical situations, and are not limited here.
As an example, the planarization dielectric layer 21 should be made of a dielectric material having fluidity under specific conditions, in this embodiment, borophosphosilicate glass is preferably used, and in addition, the lower surface of the planarization dielectric layer 21 needs to be relatively flat in the horizontal direction, so that the lower surfaces of the light source positive bonding electrode 10 and the light source negative bonding electrode 11 can be on the same horizontal line, which is beneficial to the bonding between the Micro LED light source 3 and the substrate 22; similarly, the lower surfaces of the detector positive bonding electrode 19 and the detector negative bonding electrode 20 can be on the same horizontal line, which is beneficial to the bonding between the Micro LED detector 4 and the substrate 22; in this embodiment, the material of the substrate 22 is preferably monocrystalline silicon.
As an example, the light-transmitting layer 29 should have a certain flexibility, and the upper surface of the light-transmitting layer 29 is relatively flat, which is beneficial for depositing the visible light reflecting layer 30 above, in this embodiment, the material of the visible light reflecting layer 30 is preferably Ag metal. The contact protection layer 31 serves as a contact surface between an external force and the tactile sensing device unit 1, and is used for protecting the internal structure of the device, and in this embodiment, the material of the contact protection layer 31 is preferably a resin material.
Example two
The embodiment provides a method for manufacturing a touch sensor array based on silicon-based Micro LEDs, as shown in fig. 10, the method for manufacturing the touch sensor array based on silicon-based Micro LEDs described in the first embodiment can be used for manufacturing the touch sensor array based on silicon-based Micro LEDs described in the second embodiment, as shown in fig. 11 to 18, and the method for manufacturing the touch sensor array based on silicon-based Micro LEDs described in the second embodiment is described in detail.
As shown in fig. 10 and 11, step S1 is performed to provide a GaN-based LED epitaxial wafer, which includes, from bottom to top, a silicon substrate 100, a material buffer layer 200, an unintentionally doped GaN material layer 300, an N-type GaN material layer 400, a multiple quantum well material layer 500, and a P-type GaN material layer 600. The touch sensor array of the silicon-based Micro LED adopts a silicon-based epitaxial wafer, so that direct coupling of light is reduced, and background noise of the sensor is reduced.
As shown in fig. 10 and 12, step S2 is performed to perform photolithography and etching on the front surface of the GaN LED epitaxial wafer until the silicon substrate 100 stops, so as to form isolation trenches between different regions, and then to perform photolithography and etching on the front surface of the GaN LED epitaxial wafer until the N-type GaN layer 400 stops, so as to form active layers of different Micro LEDs together with the N-type GaN layer 400.
Here, it should be noted that the light source material buffer layer 13, the light source unintentionally doped GaN layer 12, the light source N-type GaN layer 7, the light source multi-quantum well layer 6 and the light source P-type GaN layer 5 of the Micro LED light source 3, and the detector material buffer layer 27, the detector unintentionally doped GaN layer 26, the detector multi-quantum well layer 15 and the detector P-type GaN layer 14 of the Micro LED detector 4 are formed in this step, as shown in fig. 12. In addition, in the step, etching is carried out by adopting an inductively coupled plasma etching technology after photoetching.
As shown in fig. 10 and 13, step S3 is performed to form a positive electrode of the Micro LED on the front surface of the gan-based LED epitaxial wafer.
Here, the positive electrode of the Micro LED is formed to include the light source positive electrode 8 and the detector positive electrode 17; the light source positive electrode 8 is in direct contact with the light source P-type GaN layer 5, which is ohmic contact, and the material of the light source positive electrode 8 is preferably nickel-gold alloy in this embodiment; similarly, the positive electrode 17 of the detector is in direct contact with the P-type GaN layer 14 of the detector, and is in ohmic contact, and the material of the positive electrode 17 of the detector is preferably nickel-gold alloy in this embodiment.
As an example, the method for forming the light source positive electrode 8 and the detector positive electrode 17 is deposition by an electron beam evaporation EBE technique.
As shown in fig. 10 and 14, step S4 is performed to form a negative electrode of the Micro LED on the front surface of the gan-based LED epitaxial wafer.
Here, the negative electrode of the Micro LED is formed to include the light source negative electrode 9 and the detector negative electrode 18; ohmic contact is also formed between the light source negative electrode 9 and the light source N-type GaN layer 7, and the material of the light source negative electrode 9 is preferably titanium-aluminum-nickel-gold alloy in the embodiment; the detector negative electrode 18 is also in ohmic contact with the detector N-type GaN layer 16, and the material of the detector negative electrode 18 is preferably titanium-aluminum-nickel-gold alloy in this embodiment.
As an example, the method of forming the light source negative electrode 9 and the detector negative electrode 18 is also deposition by electron beam evaporation EBE technique.
As shown in fig. 10 and fig. 15, step S5 is performed to form the planarization dielectric layer 21 on the front surface of the gan LED epitaxial wafer, form holes to form the column portions of the positive bonding electrode and the negative bonding electrode, and form complete positive bonding electrode and negative bonding electrode on the surface of the planarization dielectric layer 21.
It should be noted here that the bonding electrode includes a columnar portion penetrating through the planarization dielectric layer 21 and a portion located on the surface of the planarization dielectric layer 21; the positive bonding electrode comprises the light source positive bonding electrode 10 and the detector positive bonding electrode 19, and the negative bonding electrode comprises the light source negative bonding electrode 11 and the detector negative bonding electrode 20; the process method for forming the planarization dielectric layer 21 is a damascene process, in this embodiment, the planarization dielectric layer 21 preferably uses borophosphosilicate glass, and in addition, the lower surface of the planarization dielectric layer 21 needs to be relatively flat in the horizontal direction, so that the lower surfaces of the light source positive bonding electrode 10 and the light source negative bonding electrode 11 can be on the same horizontal line, which is beneficial to bonding with the substrate 22 in the subsequent process.
As shown in fig. 10 and 16, step S6 is performed to invert the structure, and a through hole is etched on the silicon substrate 100 by photolithography to form the silicon substrate layer 28.
It should be noted here that the number of the through holes is 2, the through holes are respectively located right above the light source mqw layer 6 and the detector mqw layer 15, the through holes are large in top and small in bottom, the cross section of the through holes is rectangular or circular, and the specific shape and size can be selected according to actual situations, which is not limited herein. In addition, in the step, a deep silicon etching technology is adopted for etching after photoetching, and silicon materials right above the multiple quantum well layer are removed.
As shown in fig. 10 and 17, step S7 is performed to coat a light-transmitting material higher than the silicon substrate layer 28 on the surface of the structure and in the through hole, so as to form the light-transmitting layer 29.
It should be noted that the upper surface of the light-transmitting layer 29 is higher than the silicon substrate layer 28, and the upper surface is relatively flat, which is beneficial for depositing the visible light-reflecting layer 30 above.
As shown in fig. 10 and 18, step S8 is performed to sequentially form the visible light reflecting layer 30 and the contact protective layer 31 above the light-transmitting layer 29.
Here, the visible light reflecting layer 30 is formed by depositing a layer of metal Ag above the light transmitting layer 29, and then stripping; the method for forming the contact protection layer 31 is spin coating or deposition.
As shown in fig. 19, as an example, in step S6, after forming a plurality of positive bonding electrodes and negative bonding electrodes, the method further includes a step of bonding the resulting structure to the substrate 22 through a squirrel-based substrate bonding metal 23, a surface or an interior of the substrate 22 includes a circuit unit 25, and the circuit unit 25 is configured to process and analyze output signals of the Micro LED, and in this embodiment, the method is mainly configured to process and analyze output signals of the Micro LED light source 3 and the Micro LED detector 4.
In summary, the invention provides a touch sensor array based on silicon-based Micro LEDs and a preparation method thereof, wherein the touch sensor array comprises regularly distributed touch sensing device units, each touch sensing device unit comprises two Micro LEDs, one of the Micro LEDs is a Micro LED light source, and the other is a Micro LED detector; the tactile sensing device unit is used for realizing a tactile sensing function, and the distribution density of the tactile sensing device unit determines the resolution of tactile sensing. According to the touch sensor array based on the silicon-based Micro LED, the silicon-based epitaxial wafer is adopted, so that the direct coupling of light is reduced, and the background noise of the sensor is reduced; by utilizing the MEMS technology, the finally obtained device has small volume and light weight, can reduce the production cost through batch production, and is beneficial to the application and popularization of the invention; based on the photoelectric detection principle, the touch sensor array has the advantages of high resolution and sensitivity, high response speed and strong anti-electromagnetic interference capability; the size of the touch sensor array can be scaled according to the preparation process capability, and the touch sensor array can realize the touch sensing function with high resolution through large-scale high-density integration. Therefore, the invention effectively overcomes various defects in the prior art and has high industrial utilization value.
The foregoing embodiments are merely illustrative of the principles and utilities of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or change the above-mentioned embodiments without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes which can be made by those skilled in the art without departing from the spirit and technical spirit of the present invention be covered by the claims of the present invention.
Claims (10)
1. A silicon-based Micro LED-based tactile sensor array, comprising: the touch sensing device units (1) are distributed regularly;
the touch sensing device unit (1) comprises two Micro LEDs, wherein one Micro LED serves as a Micro LED light source (3), and the other Micro LED serves as a Micro LED detector (4);
the Micro LED light source (3) comprises:
the light source active layer sequentially comprises a light source P-type GaN layer (5), a light source multi-quantum well layer (6) and a light source N-type GaN layer (7) from bottom to top;
a light source positive electrode (8) positioned below the light source P-type GaN layer (5);
a light source negative electrode (9) which is directly contacted with the lower part of the light source N-type GaN layer (7) and has a space with a platform consisting of the light source P-type GaN layer (5) and the light source multiple quantum well layer (6);
the planarization dielectric layer (21) covers the lower parts of the light source positive electrode (8) and the light source negative electrode (9);
the light source positive bonding electrode (10) is positioned below the light source positive electrode (8), the light source positive bonding electrode (10) comprises two parts, a columnar part penetrates through the planarization dielectric layer (21), and the other part covers the surface of the planarization dielectric layer (21);
the light source negative bonding electrode (11) is positioned below the light source negative electrode (9), the light source negative bonding electrode (9) comprises two parts, a columnar part penetrates through the planarization dielectric layer (21), and the other part covers the surface of the planarization dielectric layer (21);
the light source unintentionally doped GaN layer (12) and the light source material buffer layer (13) are sequentially positioned above the light source N-type GaN layer (7);
the structure of the Micro LED detector (4) is the same as that of the Micro LED light source (3), and the Micro LED detector (4) is located on the side edge of the Micro LED light source (3);
the tactile sensing device unit (1) further comprises:
a silicon substrate layer (28) located above the light source material buffer layer (13), wherein 2 through holes are formed in the silicon substrate layer (28) and located above the active layers of the two Micro LEDs respectively, one of the through holes exposes the Micro LED light source (3), the other through hole exposes the Micro LED detector (4), and part of light emitted by the Micro LED light source (3) is reflected to the Micro LED detector (4) through the reflection layer (30);
the light transmitting layer (29) is used for filling the through holes of the silicon substrate layer (28) and covering the upper surface of the silicon substrate layer (28);
and the visible light reflecting layer (30) and the contact protection layer (31) are sequentially positioned above the euphotic layer (29).
2. The silicon-based Micro LED-based tactile sensor array of claim 1, wherein: the touch sensing device unit (1) is bonded on a substrate (22) through a substrate bonding metal (23), a circuit unit (25) is contained on the surface or inside of the substrate (22), and the circuit unit (25) is used for processing and analyzing output signals of the Micro LED.
3. The silicon-based Micro LED-based tactile sensor array of claim 1, wherein: an isolation groove is arranged between the Micro LED light source (3) and the Micro LED detector (4), and isolation metal (33) is arranged in the isolation groove.
4. The silicon-based Micro LED-based tactile sensor array of claim 1, wherein: the touch sensor array based on the silicon-based Micro LED further comprises pulse sensing device units (2), the number of the pulse sensing device units (2) is less than that of the touch sensing device units (1), and the pulse sensing device units are distributed in the touch sensor array in order; the structure of the pulse sensing device unit (2) is different from the structure of the tactile sensing device unit (1) in that the pulse sensing device unit (2) does not include the visible light reflecting layer (30) in the tactile sensing device unit (1).
5. The silicon-based Micro LED based tactile sensor array of claim 4, wherein: the pulse sensing device unit (2) is bonded on the substrate (22) through the substrate bonding metal (23), a circuit unit (25) is contained on the surface or inside of the substrate (22), and the circuit unit (25) is used for processing and analyzing output signals of the Micro LED.
6. The silicon-based Micro LED-based tactile sensor array of claim 1, wherein: the maximum width of the light source multi-quantum well layer (6) is less than 100 mu m.
7. The silicon-based Micro LED-based tactile sensor array of claim 1, wherein: the through holes arranged on the silicon substrate layer (28) are large in top and small in bottom, and the cross sections of the through holes are rectangular or circular.
8. The silicon-based Micro LED-based tactile sensor array of claim 1, wherein: the visible light reflecting layer (30) is made of metal Ag, and the contact protection layer (31) is made of resin.
9. A preparation method of the silicon-based Micro LED touch sensor array according to any one of claims 1 to 8, wherein the preparation method comprises the following steps:
s1: providing a silicon-based gallium nitride LED epitaxial wafer, wherein the silicon-based gallium nitride LED epitaxial wafer sequentially comprises a silicon substrate (100), a material buffer layer (200), an unintentionally doped GaN material layer (300), an N-type GaN material layer (400), a multiple quantum well material layer (500) and a P-type GaN material layer (600) from bottom to top;
s2: photoetching and etching the front surface of the silicon-based gallium nitride LED epitaxial wafer until the silicon substrate (100) stops to form an isolation groove between different regions, photoetching and etching the front surface of the silicon-based gallium nitride LED epitaxial wafer until the N-type GaN layer (400) stops, and forming active layers of different Micro LEDs together with the N-type GaN layer (400);
s3: forming a positive electrode of the Micro LED on the front surface of the silicon-based gallium nitride LED epitaxial wafer;
s4: forming a negative electrode of the Micro LED on the front surface of the silicon-based gallium nitride LED epitaxial wafer;
s5: forming the planarization dielectric layer (21) on the front surface of the silicon-based gallium nitride LED epitaxial wafer, forming columnar parts of a positive bonding electrode and a negative bonding electrode by opening holes, and forming a complete positive bonding electrode and a complete negative bonding electrode on the surface of the planarization dielectric layer (21);
s6: inverting the structure, and photoetching and etching the through hole on the silicon substrate (100) to form a silicon substrate layer (28);
s7: coating a light-transmitting material higher than the silicon substrate layer (28) on the surface of the structure and in the through hole to form the light-transmitting layer (29);
s8: and sequentially forming the visible light reflecting layer (30) and the contact protection layer above the light transmitting layer (29).
10. The method for preparing the silicon-based Micro LED-based touch sensor array according to claim 9, wherein the method comprises the following steps: in step S6, the method further includes a step of bonding the resulting structure to the substrate (22) through the substrate bonding metal (23) after forming the positive bonding electrode and the negative bonding electrode, wherein a surface or an interior of the substrate (22) includes a circuit unit (25), and the circuit unit (25) is used for processing and analyzing an output signal of the Micro LED.
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