CN114743857A - Dry etching machine bottom electrode and manufacturing process method thereof - Google Patents

Dry etching machine bottom electrode and manufacturing process method thereof Download PDF

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Publication number
CN114743857A
CN114743857A CN202210548211.3A CN202210548211A CN114743857A CN 114743857 A CN114743857 A CN 114743857A CN 202210548211 A CN202210548211 A CN 202210548211A CN 114743857 A CN114743857 A CN 114743857A
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lower electrode
dry etching
etching machine
rod
ceramic rod
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CN202210548211.3A
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赵浩
何新玉
刘其贵
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Wuhu Tongchao Precision Machinery Co ltd
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Wuhu Tongchao Precision Machinery Co ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32541—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/3255—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32559—Protection means, e.g. coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma Technology (AREA)

Abstract

The invention discloses a lower electrode of a dry etching machine table, which comprises a lower electrode substrate, a titanium rod and a ceramic rod arranged between the lower electrode substrate and the titanium rod; the end part of the titanium rod is contacted with the tungsten layer; and chamfers are arranged at the end parts of the titanium rod, which is in contact with the dielectric layer, and the electrode substrate and the ceramic rod. The invention also discloses a manufacturing process method of the lower electrode. By adopting the technical scheme, the defects of gap formation and the like when the direct current electrode column is embedded can be effectively avoided, the subsequent insulating layer is well combined, the breakdown voltage resistance is more than 6000V, and the requirements of high-generation and high-process panel etching equipment can be effectively met.

Description

Dry etching machine bottom electrode and manufacturing process method thereof
Technical Field
The invention belongs to the technical field of liquid crystal panel manufacturing process and equipment. More particularly, the present invention relates to a bottom electrode of a dry etching machine. The invention also relates to a manufacturing process method thereof.
Background
The dry etching machine is a key device in the preparation process of the liquid crystal panel and the semiconductor, and the lower electrode is a key component in the dry etching machine; the lower electrode is a typical sandwich structure and consists of a bottom insulating layer, a tungsten conducting layer and a surface dielectric layer.
When the etching machine works, the glass substrate is placed on the surface of the lower electrode and is in direct contact with the dielectric layer of the lower electrode, the direct-current power supply is connected to the tungsten conducting layer through the direct-current electrode post at the back of the lower electrode to enable the tungsten conducting layer to be negatively charged, the lower surface of the glass generates induced positive charges, coulomb stress is generated between the positive charges and the negative charges to enable the glass to be adsorbed on the surface of the lower electrode, the substrate is prevented from moving in the etching process, the effectiveness and the stability of an etching process are guaranteed, and redundant film layers are etched to form a required circuit diagram under the chemical and physical actions of plasma gas in the upper surface of the glass substrate and an etching cavity.
The lower electrode is divided into two types according to different surface dielectric layer structures:
1. flat type (Flat type) as shown in fig. 1;
2. bump type (Emboss type), as shown in fig. 2.
Although the structures of the two types of bottom electrode dielectric layers are slightly different, the functions in the dry etching machine are consistent: and adsorbing the glass during etching, cooling the glass, keeping the flatness of the glass, keeping the etching balance and the glass temperature uniformity.
Both types of lower electrodes comprise the following main structure: earth dike 11(Dam), thimble 12(Lift pin), He air hole 13, DC electrode column 14, insulating layer 10 (Al)2O3) Tungsten layer 9(W), dielectric layer 8 (Al)2O3)。
The role of these structures is as follows:
earth dike 11 (Dam): the support glass is sealed with the glass substrate to prevent excessive overflow of cooling He gas;
thimble 12(Lift pin): ejecting the glass substrate;
he gas hole 13: introducing He gas to cool the glass substrate;
direct current electrode column 14: connecting the tungsten layer to enable the tungsten layer to be electrified and adsorb the glass;
alumina insulating layer 10 (Al)2O3) And Al2O3Alumina dielectric layer 8 (Al)2O3): wrapping the tungsten layer 9 to enable the tungsten layer 9 to be in an insulation state with the outside;
tungsten layer 9: the electrode layer is connected with the direct electrode column, and the tungsten layer 9 is electrified and then adsorbs the glass through electrostatic induction.
When the lower electrode works, the DC electrode column 14 is applied with 2000-3000V high voltage. With the gradual increase of the panel generation to G10.5 and the popularization of high-process LTPS (low-temperature polysilicon) and AMOLED (flexible organic light emitting diode) panels, a larger coulomb force is required to adsorb the glass substrate; pressurizing the position of the DC electrode post 14 to 3000-5000V.
1. A typical dc feed column structure is shown in fig. 3, and comprises a titanium rod 1, a ceramic rod 2, and a plastic end cap 3. The ceramic rod 2 is adjacent to the lower electrode base body 4, so that the insulation of the titanium rod 1 and the lower electrode base body 4 is ensured; the titanium rod 1 is connected with a direct current power supply and loads voltage to the tungsten layer 9; the plastic end cap 3 serves as insulation and sealing.
2. The technical scheme for installing the direct current electrode column in the prior art is as follows:
heating the lower electrode substrate 4 to more than 200 ℃, then putting the insulating ceramic rod 2 in the insulating ceramic rod, and embedding the ceramic rod 2 on the lower electrode substrate 4 in a mode of thermal expansion and cold contraction; the titanium rod 1 and the plastic end cover 3 are assembled in an epoxy resin embedding glue mode.
The method can ensure that the ceramic rod 2 and the lower electrode matrix 4 are well embedded, and fully ensure the insulation between the titanium rod 1 and the lower electrode matrix 4, but a gap 5 is easily formed between the lower electrode matrix 4 and the ceramic rod 2. Subsequent Al melting by plasma2O3In the case of an insulating layer, the coating bonding at the gap 5 is poor, and when the direct current power supply pole 14 and the lower electrode substrate 4 are pressurized, particularly when the voltage is more than 3000V, the electrical breakdown is easily generated at the gap 5, so that the lower electrode is disabled.
The traditional mounting process of the direct current pole 14 cannot meet the use requirements, the voltage resistance of the direct current pole 14 is often insufficient, electric breakdown occurs, the lower electrode cannot be used, the capacity of client equipment is seriously affected, and a process scheme of the direct pole 14 with higher voltage resistance is urgently needed.
Disclosure of Invention
The invention provides a lower electrode of a dry etching machine, aiming at improving the high-voltage resistance of the electrode.
In order to achieve the purpose, the invention adopts the technical scheme that:
the invention relates to a lower electrode of a dry etching machine, which comprises a lower electrode substrate, a titanium rod and a ceramic rod arranged between the lower electrode substrate and the titanium rod; the end part of the titanium rod is contacted with the dielectric layer; and chamfers are arranged at the end parts, in contact with the dielectric layer, of the titanium rod and the electrode substrate.
Compact Al is arranged in the chamfer2O3And (4) coating.
And arranging vacuum sealant in a gap between the inner hole of the electrode matrix and the ceramic rod.
And at the opposite end of the titanium rod contacted with the dielectric layer, the titanium rod and the plastic end cover are assembled in an epoxy resin embedding glue mode.
In order to achieve the same purpose as the technical scheme, the invention also provides a manufacturing process method of the lower electrode of the dry etching machine, which comprises the following steps:
1. chamfering the lower electrode substrate and the ceramic rod;
2. cleaning and drying the lower electrode substrate and the ceramic rod;
3. carrying out embedding treatment on the ceramic rod, the electrode substrate, the titanium rod and the plastic sealing cover;
4. carrying out sand blasting treatment on the chamfer;
5. plasma-fused dense Al2O3Coating;
6. for dense Al2O3Polishing and sand blasting the coating;
7. melting, jetting and spraying an aluminum oxide insulating layer;
8. spraying a tungsten layer by melting;
9. and (4) performing melt-jetting spraying on the aluminum oxide medium layer.
By adopting the technical scheme, the defects of gap formation and the like when the direct current electrode column is embedded can be effectively avoided, the subsequent insulating layer is ensured to be well combined, the breakdown voltage resistance is more than 6000V, and the requirements of high-generation and high-process panel etching equipment can be effectively met.
Drawings
The contents of the drawings and the reference numbers in the drawings are briefly described as follows:
FIG. 1 is a schematic structural diagram of a bottom electrode of a dry etching machine with a plate-type structure;
FIG. 2 is a schematic view of a bottom electrode of a dry etching machine with a bump structure;
FIG. 3 is a schematic diagram of a DC electrode column structure in the prior art;
fig. 4 is a schematic diagram of the structure of the improved high-voltage-resistant dc terminal post of the present invention.
Labeled as:
1. titanium rod, 2 ceramic rod, 3 plastic end cap, 4 lower electrode base body, 5 gap, 6 compact Al2O3Coating, 7, vacuum sealant, 8, aluminum oxide dielectric layer (Al)2O3) 9 tungsten layer (W layer), 10 alumina insulation layer (Al)2O3) 11, earth dike (Dam), 12, thimble (Lift pin), 13, He air hole, 14, direct current electrode column, 15 and salient point (emboss).
Detailed Description
The following detailed description of the embodiments of the present invention will be given in order to provide those skilled in the art with a more complete, accurate and thorough understanding of the inventive concept and technical solutions of the present invention.
As shown in fig. 3, the structure of the invention is a lower electrode of a dry etching machine, which comprises a lower electrode base 4, a titanium rod 1, a plastic end cover 3, and a ceramic rod 2 arranged between the lower electrode base 4 and the titanium rod 1; the end part of the titanium rod 1 is contacted with the medium layer 9.
The ceramic rod 2 is adjacent to the lower electrode base body 4, so that the insulation of the titanium rod 1 and the lower electrode base body 4 is ensured; the titanium rod 1 is connected with a direct current power supply and loads voltage to the tungsten layer 9; the plastic end cap 3 serves as insulation and sealing. Alumina insulating layer 10 (Al)2O3) And Al2O3Alumina dielectric layer 8 (Al)2O3): the tungsten layer 9 is wrapped to make the tungsten layer 9 in an insulation state with the outside.
In order to solve the problems in the prior art, overcome the defects and achieve the purpose of improving the high-voltage resistance of the electrode, the invention adopts the technical scheme that:
as shown in fig. 4, in the lower electrode of the dry etching machine of the present invention, chamfers are disposed at both the end of the titanium rod 1 contacting the dielectric layer 9 and the end of the electrode substrate 4 contacting the ceramic rod 2 for performing a chamfering process.
Compact Al is arranged in the chamfer2O3And (6) coating. Preparing compact Al at the chamfer joint by using compact plasma fusion injection process2O3The coating 6 has porosity less than 2% and binding force greater than 10 MPa.
By using the technical structure scheme, the defects of gap formation and the like when the direct current electrode column is embedded can be effectively avoided, the direct current electrode column is well combined with the insulating layer after being ensured, and the breakdown voltage resistance is more than 6000V.
The chamfer size is R0.5-R1.5. And (3) performing sand blasting pretreatment on the chamfer of the lower electrode matrix 4 and the chamfer of the ceramic rod 2.
And vacuum sealant 7 is arranged in a gap 5 between the inner hole of the electrode base body 4 and the ceramic rod 2. The ceramic rod 2 is mounted on the lower electrode substrate 4 using a vacuum sealant 7.
And at the opposite end of the titanium rod 1 contacting with the dielectric layer 9, the titanium rod 1 and the plastic end cover 3 are assembled in an epoxy resin embedding glue mode.
By using the technical scheme, the defects of gap formation and the like when the direct current electrode column is embedded can be effectively avoided, the subsequent insulating layer is ensured to be well combined, the breakdown voltage resistance is more than 6000V, and the requirements of high-generation and high-process panel etching equipment can be effectively met.
In order to achieve the same purpose as the technical scheme, the invention also provides a manufacturing process method of the lower electrode of the dry etching machine, which comprises the following steps:
1. chamfering the lower electrode substrate 4 and the ceramic rod 2;
2. cleaning and drying the lower electrode substrate 4 and the ceramic rod 2;
3. carrying out embedding treatment on the ceramic rod 2, the electrode substrate 4, the titanium rod 1 and the plastic sealing cover 3;
4. carrying out sand blasting treatment on the chamfer;
5. plasma fusion compacted Al2O3A coating 6;
6. for dense Al2O3Polishing and sand blasting treatment are carried out on the coating 6;
7. the alumina insulating layer 10 is sprayed by melting;
8. the tungsten layer 9 is sprayed by melting;
9. and the alumina dielectric layer 8 is sprayed by melting.
In the step 1, a chamfer angle of the lower electrode base body 4 is manually processed by using a chamfer angle tool, and the size of the chamfer angle is R0.5-R1.5; and processing the chamfer of the ceramic rod 2 by a grinding cutter of a processing center, wherein the size of the chamfer is R0.5-R1.5.
In the step 2, the lower electrode is washed by high-pressure water; then blowing the surface of the lower electrode by using compressed air; cleaning the ceramic rod 2 by using ultrasonic waves, and then drying by using a compressed air hole; and finally, putting the lower electrode and the ceramic rod 2 into an oven for drying at 50-100 ℃ for 12-36 hours.
The resistivity of the deionized water used for high-pressure water washing is more than 4M omega cm, and the pressure is 80-150 bar.
The deionized water used for ultrasonic cleaning has the resistivity larger than 4M omega cm and the ultrasonic intensity of 6-12W/inch2。
In the step 3, vacuum sealant is used for coating the outer surface of the ceramic rod 2 to the chamfer angle, then the ceramic rod is embedded on the lower electrode matrix 4, and the ceramic rod is placed in an oven for curing treatment at the temperature of 40-80 ℃ for 1-5 hours; then the titanium rod 1 and the plastic sealing cover 3 are embedded by using epoxy resin glue.
In the step 4, the chamfer is subjected to sand blasting treatment by using a white corundum sand material with the purity of more than 99.5 percent, the mesh number of 60-100, the sand blasting pressure of 0.2-0.6 MPa and the sand blasting distance of 300-600 mm. The surface roughness after sand blasting is more than Ra2.5 mu m.
In the step 5, Al is used for the plasma spray dense coating 62O3Powder with granularity of 5-45 μm and purity of more than 99.9％。
The spraying process parameters of the plasma fused dense coating 6 are as follows: the flow rate of main gas Ar is 45-55L/min, and the flow rate of secondary gas H is2The flow rate is 10-15L/min, the voltage is 65-75V, the current is 600-700A, the powder feeding amount is 5-15 g/min, and the spraying distance is 100-150 mm. The porosity of the coating is less than 2%, and the binding force reaches more than 10 MPa.
In the step 6, 200# to 1200# white corundum abrasive paper is used for polishing compact Al2O3Coating 6, so that the coating is flush with the surface of the lower electrode substrate 4; and then carrying out sand blasting treatment on the chamfer angle, wherein a white corundum sand material with the purity of more than 99.5 percent, the mesh number of 60# to 100#, the sand blasting pressure of 0.2 to 0.6MPa and the sand blasting distance of 300 to 600mm are used, and the surface roughness after sand blasting is more than Ra2.5 mu m.
In the step 7, Al is used for the plasma fused alumina insulating layer 102O3The powder has the granularity of 5-45 mu m and the purity of more than 99.9 percent.
The spraying process parameters of the plasma fused alumina insulation layer 10 are as follows: the flow rate of main gas Ar is 35-50L/min, and the flow rate of secondary gas H is2The flow rate is 6-10L/min, the voltage is 60-70V, the current is 550-650A, the powder feeding amount is 10-30 g/min, and the spraying distance is 100-150 mm. The porosity of the coating is less than 4%, and the binding force reaches more than 8 MPa.
In the step 8, tungsten powder is used for the plasma fusion electrode layer 9, the particle size of the powder is 45-125 μm, and the purity is more than 99.9%.
The spraying process parameters of the plasma fusion electrode layer tungsten layer 9 are as follows: main gas Ar flow rate is 40-50L/min, secondary gas H2The flow is 6-12L/min, the voltage is 550-650V, the current is 550-650A, the powder feeding amount is 20-40 g/min, the spraying distance is 120-150 mm, the resistance value of the tungsten coating is lower than 1 omega, and the binding force reaches more than 10 MPa.
In the step 9, the plasma fused alumina dielectric layer 8 uses Al2O3Powder with the granularity of 5-45 mu m and the purity of more than 99.9 percent,
the spraying process parameters of the plasma fused alumina dielectric layer 8 are as follows: the flow rate of main gas Ar is 35-50L/min, and the flow rate of secondary gas H is2Flow rate of 6-10L/min, voltage of 60-70V, and current of 550650A, powder feeding amount of 10-30 g/min, and spraying distance of 100-150 mm. The porosity of the coating is less than 4%, and the binding force reaches more than 8 MPa.
The present invention has been described in detail with reference to the accompanying drawings, and it is to be understood that the invention is not limited to the specific embodiments described above, and that various insubstantial modifications of the inventive concepts and solutions, or their direct application to other applications without modification, are intended to be covered by the scope of the invention.

Claims (10)

1. A lower electrode of a dry etching machine comprises a lower electrode base body (4), a titanium rod (1) and a ceramic rod (2) arranged between the lower electrode base body (4) and the titanium rod (1); the end part of the titanium rod (1) is contacted with the tungsten layer (9); the method is characterized in that: and chamfers are arranged at the end parts, in contact with the dielectric layer (9), of the titanium rod (1) and the electrode substrate (4) and the ceramic rod (2).
2. The dry etching machine bottom electrode according to claim 1, characterized in that: compact Al is arranged in the chamfer2O3A coating (6).
3. The dry etching machine bottom electrode according to claim 1, characterized in that: the chamfer angle is R0.5-R1.5.
4. The dry etching machine bottom electrode according to claim 1, characterized in that: and vacuum sealant (7) is arranged in a gap (5) between the inner hole of the electrode substrate (4) and the ceramic rod (2).
5. The dry etching machine bottom electrode according to claim 1, characterized in that: the titanium rod (1) is assembled with the plastic end cover (3) in an epoxy resin embedding glue mode at the opposite end, in contact with the dielectric layer (9), of the titanium rod (1).
6. The manufacturing process method of the bottom electrode of the dry etching machine according to any one of claims 1 to 5, characterized in that: the manufacturing process method comprises the following steps:
1) chamfering the lower electrode substrate (4) and the ceramic rod (2);
2) cleaning and drying the lower electrode substrate (4) and the ceramic rod (2);
3) inlaying the ceramic rod (2), the electrode substrate (4), the titanium rod (1) and the plastic sealing cover (3);
4) carrying out sand blasting treatment on the chamfer;
5) plasma-fusion-compacted Al2O3A coating (6);
6) p. compact Al2O3The coating (6) is polished and sandblasted;
7) the alumina insulating layer (10) is sprayed by meltallizing;
8) the tungsten layer (9) is sprayed by melting;
9) and the aluminum oxide dielectric layer (8) is sprayed by melting.
7. The manufacturing process method of the bottom electrode of the dry etching machine according to claim 6, characterized in that: in the step 1), a chamfering tool is used for manually processing the chamfer of the lower electrode base body (4), and the size of the chamfer is R0.5-R1.5; and processing the chamfer of the ceramic rod (2) by a grinding cutter of a processing center, wherein the size of the chamfer is R0.5-R1.5.
8. The manufacturing process method of the lower electrode of the dry etching machine according to claim 6, characterized in that: in the step 2), washing the lower electrode by using high-pressure water; then, drying the surface of the lower electrode by using compressed air; cleaning the ceramic rod 2 by using ultrasonic waves, and then drying by using a compressed air hole; and finally, the lower electrode and the ceramic rod 2 are placed in an oven to be dried at 50-100 ℃ for 12-36 hours.
9. The manufacturing process method of the bottom electrode of the dry etching machine according to claim 8, characterized in that: the resistivity of the deionized water used for high-pressure water washing is more than 4M omega cm, and the pressure is 80-150 bar.
10. The manufacturing process method of the bottom electrode of the dry etching machine according to claim 8, characterized in that: the resistivity of deionized water used for ultrasonic cleaning is more than 4M omega cm, and the ultrasonic intensity is 6-12W/inch2。
CN202210548211.3A 2022-05-18 2022-05-18 Dry etching machine bottom electrode and manufacturing process method thereof Pending CN114743857A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202210548211.3A CN114743857A (en) 2022-05-18 2022-05-18 Dry etching machine bottom electrode and manufacturing process method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202210548211.3A CN114743857A (en) 2022-05-18 2022-05-18 Dry etching machine bottom electrode and manufacturing process method thereof

Publications (1)

Publication Number Publication Date
CN114743857A true CN114743857A (en) 2022-07-12

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