CN114743857A - Dry etching machine bottom electrode and manufacturing process method thereof - Google Patents
Dry etching machine bottom electrode and manufacturing process method thereof Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 30
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 14
- 238000001312 dry etching Methods 0.000 title description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 35
- 239000000919 ceramic Substances 0.000 claims abstract description 35
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims abstract description 23
- 239000010937 tungsten Substances 0.000 claims abstract description 22
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 22
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 26
- 239000011248 coating agent Substances 0.000 claims description 20
- 238000000576 coating method Methods 0.000 claims description 20
- 239000000758 substrate Substances 0.000 claims description 17
- 239000004033 plastic Substances 0.000 claims description 13
- 238000005507 spraying Methods 0.000 claims description 11
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 8
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 8
- 238000005488 sandblasting Methods 0.000 claims description 8
- 239000000565 sealant Substances 0.000 claims description 6
- 238000007789 sealing Methods 0.000 claims description 6
- 239000007921 spray Substances 0.000 claims description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 6
- 238000007750 plasma spraying Methods 0.000 claims description 5
- 239000008367 deionised water Substances 0.000 claims description 4
- 229910021641 deionized water Inorganic materials 0.000 claims description 4
- 239000003822 epoxy resin Substances 0.000 claims description 4
- 239000003292 glue Substances 0.000 claims description 4
- 238000000227 grinding Methods 0.000 claims description 4
- 229920000647 polyepoxide Polymers 0.000 claims description 4
- 238000005406 washing Methods 0.000 claims description 4
- 238000001035 drying Methods 0.000 claims description 3
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 2
- 238000004140 cleaning Methods 0.000 claims 1
- 238000005530 etching Methods 0.000 abstract description 9
- 230000015556 catabolic process Effects 0.000 abstract description 6
- 230000007547 defect Effects 0.000 abstract description 5
- 239000011521 glass Substances 0.000 description 15
- 239000000843 powder Substances 0.000 description 11
- 238000005422 blasting Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000009413 insulation Methods 0.000 description 5
- 239000002245 particle Substances 0.000 description 4
- 229910052593 corundum Inorganic materials 0.000 description 3
- 239000010431 corundum Substances 0.000 description 3
- 238000001816 cooling Methods 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 238000011900 installation process Methods 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000004576 sand Substances 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 229920001621 AMOLED Polymers 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229920006335 epoxy glue Polymers 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32541—Shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/3255—Material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32559—Protection means, e.g. coatings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
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Abstract
本发明公开了一种干刻机台下电极,包括下电极基体、钛棒,以及设置在下电极基体与钛棒之间的陶瓷棒;钛棒的端部与钨层接触;在钛棒与介质层接触的一端,电极基体与陶瓷棒相接触的端部均设置倒角。本发明还公开了该下电极的制造工艺方法。采用上述技术方案,能够有效避免直流电极柱镶嵌时形成间隙等缺陷,保证后续绝缘层良好结合,耐击穿电压>6000V以上,可有效满足高世代和高制程面板刻蚀设备的需求。
The invention discloses a lower electrode of a dry engraving machine, comprising a lower electrode base, a titanium rod, and a ceramic rod arranged between the lower electrode base and the titanium rod; the end of the titanium rod is in contact with a tungsten layer; One end of the layer in contact and the end of the electrode base in contact with the ceramic rod are provided with chamfers. The invention also discloses a manufacturing process method of the lower electrode. The above technical solution can effectively avoid defects such as gaps formed when the DC electrode columns are embedded, ensure good bonding of the subsequent insulating layers, and withstand breakdown voltages > 6000V, which can effectively meet the needs of high-generation and high-process panel etching equipment.
Description
技术领域technical field
本发明属于液晶面板制造工艺及设备的技术领域。更具体地,本发明涉及一种干刻机台下电极。本发明还涉及其制造工艺方法。The invention belongs to the technical field of liquid crystal panel manufacturing process and equipment. More specifically, the present invention relates to an electrode under a dry engraving machine. The present invention also relates to its manufacturing process method.
背景技术Background technique
干刻机台是液晶面板和半导体制备过程中的关键设备,下电极是干刻机台中的关键部件;下电极为典型的三明治结构,由底层绝缘层、钨导电层及表面介质层组成。The dry engraving machine is the key equipment in the production process of liquid crystal panels and semiconductors. The lower electrode is the key component in the dry engraving machine; the lower electrode is a typical sandwich structure, consisting of a bottom insulating layer, a tungsten conductive layer and a surface dielectric layer.
刻蚀机台工作时,玻璃基板放置在下电极表面,与下电极介质层直接接触,直流电源通过下电极背部的直流电极柱连接到钨导电层使其带负电荷,玻璃下表面则产生感应正电荷,正电荷和负电荷之间产生库伦应力使玻璃吸附在下电极表面,防止基板在刻蚀过程中产生移动,保证刻蚀工艺的有效和稳定性,玻璃基板上表面与刻蚀腔体中等离子气体产生化学和物理作用蚀刻掉多余的膜层形成所需的电路图。When the etching machine is working, the glass substrate is placed on the surface of the lower electrode and is in direct contact with the dielectric layer of the lower electrode. The DC power supply is connected to the tungsten conductive layer through the DC electrode column on the back of the lower electrode to make it negatively charged, and the lower surface of the glass generates a positive induction. Coulomb stress generated between electric charges, positive charges and negative charges makes the glass adsorb on the surface of the lower electrode, preventing the substrate from moving during the etching process, ensuring the effectiveness and stability of the etching process, and the plasma on the upper surface of the glass substrate and the etching cavity. Gas-generating chemical and physical action etch away excess layers to form the desired circuit diagram.
下电极根据表面介质层结构不同分为两种类型:The lower electrode is divided into two types according to the structure of the surface dielectric layer:
1、平板型(Flat type),如图1所示;1. Flat type, as shown in Figure 1;
2、凸点型(Emboss type),如图2所示。2. Emboss type, as shown in Figure 2.
尽管两种类型下电极介质层结构略有不同,但是在干刻机台中所起作用的一致的:在刻蚀时吸附玻璃、冷却玻璃,保持玻璃的平坦度,保持刻蚀的均衡性,玻璃温度的均一性。Although the structure of the lower electrode dielectric layer of the two types is slightly different, the effect is the same in the dry etching machine: adsorption of glass during etching, cooling of glass, maintaining flatness of glass, maintaining uniformity of etching, glass uniformity of temperature.
两种类型下电极均包括以下主要结构:土堤11(Dam)、顶针12(Lift pin)、He气孔13、直流电极柱14、绝缘层10(Al2O3)、钨层9(W)、介质层8(Al2O3)。Both types of lower electrodes include the following main structures: earth bank 11 (Dam), ejector pin 12 (Lift pin),
这些结构的作用如下:These structures work as follows:
土堤11(Dam):支撑玻璃,与玻璃基板密封,防止冷却He气过量溢出;Earth embankment 11 (Dam): supporting glass, sealed with glass substrate to prevent excessive overflow of cooling He gas;
顶针12(Lift pin):顶出玻璃基板;Lift pin 12 (Lift pin): eject the glass substrate;
He气孔13:通入He气冷却玻璃基板;He air hole 13: pass He gas to cool the glass substrate;
直流电极柱14:连接钨层,使钨层带电,吸附玻璃;DC electrode column 14: connect the tungsten layer to charge the tungsten layer and absorb the glass;
氧化铝绝缘层10(Al2O3)和Al2O3氧化铝介质层8(Al2O3):包裹钨层9,使钨层9与外界处于绝缘状态;The aluminum oxide insulating layer 10 (Al 2 O 3 ) and the Al 2 O 3 aluminum oxide dielectric layer 8 (Al 2 O 3 ): wrap the
钨层9:为电极层,与直接电极柱相连,钨层9带电后,通过静电感应吸附玻璃。The
在下电极工作时,直流电极柱14处会加2000~3000V高压。随着面板代次的逐渐提高到G10.5,以及高制程LTPS(低温多晶硅)和AMOLED(柔性有机发光二极管)面板的普及,则需要更大的库仑力吸附玻璃基板;直流电极柱14处加压上升到3000~5000V。When the lower electrode is working, a high voltage of 2000-3000V will be applied to the
1、典型的直流给电柱结构如图3所示,其包括钛棒1、陶瓷棒2、塑料端盖3。陶瓷棒2与下电极基体4相邻,保证钛棒1与下电极基体4的绝缘;钛棒1连接直流电源,加载电压到钨层9;塑料端盖3起绝缘和密封作用。1. A typical DC power supply column structure is shown in Figure 3, which includes a titanium rod 1, a
2、现有技术中的直流电极柱安装工艺方案如下:2. The DC electrode column installation process scheme in the prior art is as follows:
下电极基体4加热到>200℃,然后放入绝缘陶瓷棒2,通过热胀冷缩的方式将陶瓷棒2镶嵌到下电极基体4上;钛棒1和塑料端盖3通过环氧树脂镶嵌胶方式装配。The
这种方法能够保证陶瓷棒2与下电极基体4镶嵌良好,充分保证钛棒1与下电极基体4之间的绝缘,但是易在下电极基体4与陶瓷棒2间形成间隙5。后续通过等离子熔射Al2O3绝缘层时,间隙5处涂层结合差,当直流给电柱14和下电极基体4之间加压,尤其是电压>3000V时,极易在间隙5处产生电击穿,导致下电极功能失效。This method can ensure that the
传统的直流电极柱14安装工艺已经无法满足使用要求,经常出现直流电极柱14耐电压不足,发生电击穿,导致下电极无法使用,严重影响客户端设备产能,迫切需求一种更耐电压的直接电极柱14的工艺方案。The traditional installation process of the
发明内容SUMMARY OF THE INVENTION
本发明提供一种干刻机台下电极,其目的是提高电极的耐高压的性能。The invention provides an electrode under a dry engraving machine, the purpose of which is to improve the high voltage resistance performance of the electrode.
为了实现上述目的,本发明采取的技术方案为:In order to achieve the above object, the technical scheme adopted in the present invention is:
本发明干刻机台下电极,包括下电极基体、钛棒,以及设置在下电极基体与钛棒之间的陶瓷棒;所述的钛棒的端部与介质层接触;在所述的钛棒与介质层接触的一端,所述的电极基体与陶瓷棒相接触的端部均设置倒角。The lower electrode of the dry engraving machine of the present invention includes a lower electrode base, a titanium rod, and a ceramic rod arranged between the lower electrode base and the titanium rod; the end of the titanium rod is in contact with the dielectric layer; The end that is in contact with the dielectric layer and the end of the electrode base that is in contact with the ceramic rod are provided with chamfers.
在所述的倒角内,设置致密Al2O3涂层。Within said chamfer, a dense Al 2 O 3 coating is provided.
在所述的电极基体内孔与陶瓷棒之间的间隙中,设置真空密封胶。In the gap between the inner hole of the electrode base and the ceramic rod, a vacuum sealant is arranged.
在所述的钛棒与介质层接触的相反一端,所述的钛棒与塑料端盖通过环氧树脂镶嵌胶方式进行装配。At the opposite end of the titanium rod in contact with the dielectric layer, the titanium rod and the plastic end cap are assembled by epoxy resin inlay glue.
为了实现与上述技术方案相同的发明目的,本发明还提供了以上所述的干刻机台下电极的制造工艺方法,包括以下步骤:In order to achieve the same purpose of the invention as the above technical solution, the present invention also provides the above-mentioned manufacturing process method of the electrode under the dry engraving machine, comprising the following steps:
1、对下电极基体和陶瓷棒进行倒角处理;1. Chamfer the lower electrode base and ceramic rod;
2、对下电极基体和陶瓷棒进行清洗干燥;2. Clean and dry the lower electrode substrate and ceramic rod;
3、对陶瓷棒与电极基体、钛棒和塑料密封盖进行镶嵌处理;3. Mosaic processing of ceramic rods and electrode substrates, titanium rods and plastic sealing covers;
4、对倒角喷砂处理;4. Sandblasting the chamfer;
5、等离子熔射致密Al2O3涂层;5. Plasma spraying dense Al 2 O 3 coating;
6、对致密Al2O3涂层进行打磨和喷砂处理;6. Grinding and sandblasting the dense Al 2 O 3 coating;
7、氧化铝绝缘层熔射喷涂;7. The aluminum oxide insulating layer is sprayed and sprayed;
8、钨层熔射喷涂;8. Tungsten layer spray spraying;
9、氧化铝介质层熔射喷涂。9. Alumina dielectric layer is sprayed and sprayed.
本发明采用上述技术方案,能够有效避免直流电极柱镶嵌时形成间隙等缺陷,保证后续绝缘层良好结合,耐击穿电压>6000V以上,可有效满足高世代和高制程面板刻蚀设备的需求。The present invention adopts the above technical solution, which can effectively avoid defects such as gaps formed when the DC electrode columns are inlaid, ensure that the subsequent insulating layers are well combined, and the breakdown voltage is more than 6000V, which can effectively meet the needs of high-generation and high-process panel etching equipment.
附图说明Description of drawings
附图所示的内容及图中的标记简要说明如下:The contents shown in the attached drawings and the symbols in the drawings are briefly explained as follows:
图1为平板型结构的干刻机台下电极的结构示意图;Fig. 1 is the structure schematic diagram of the lower electrode of the dry engraving machine of flat structure;
图2为凸点型结构的干刻机台下电极的结构示意图;Fig. 2 is the structural schematic diagram of the electrode under the dry engraving machine of the bump-type structure;
图3为现有技术的直流电极柱结构示意图;3 is a schematic structural diagram of a DC electrode column in the prior art;
图4为本发明改进后耐高电压的直流电极柱结构示意图。FIG. 4 is a schematic diagram of the structure of the improved high-voltage-resistant DC electrode column of the present invention.
图中标记为:The figure is marked as:
1、钛棒,2、陶瓷棒,3、塑料端盖,4、下电极基体,5、间隙,6、致密Al2O3涂层,7、真空密封胶,8、氧化铝介质层(Al2O3),9、钨层(W层),10、氧化铝绝缘层(Al2O3),11、土堤(Dam),12、顶针(Lift pin),13、He气孔,14、直流电极柱,15、凸点(emboss)。1. Titanium rod, 2. Ceramic rod, 3. Plastic end cap, 4. Lower electrode substrate, 5. Gap, 6. Dense Al 2 O 3 coating, 7. Vacuum sealant, 8. Alumina dielectric layer (Al 2 O 3 ), 9, tungsten layer (W layer), 10, alumina insulating layer (Al 2 O 3 ), 11, earth bank (Dam), 12, lift pin, 13, He pores, 14, DC electrode column, 15, emboss.
具体实施方式Detailed ways
下面对照附图,通过对实施例的描述,对本发明的具体实施方式作进一步详细的说明,以帮助本领域的技术人员对本发明的发明构思、技术方案有更完整、准确和深入的理解。The specific embodiments of the present invention will be described in further detail below with reference to the accompanying drawings, through the description of the embodiments, to help those skilled in the art to have a more complete, accurate and in-depth understanding of the inventive concept and technical solutions of the present invention.
如图3所示本发明的结构,为一种干刻机台下电极,包括下电极基体4、钛棒1、塑料端盖3,以及设置在下电极基体4与钛棒1之间的陶瓷棒2;所述的钛棒1的端部与介质层9接触。As shown in FIG. 3 , the structure of the present invention is a lower electrode of a dry engraving machine, including a
陶瓷棒2与下电极基体4相邻,保证钛棒1与下电极基体4的绝缘;钛棒1连接直流电源,加载电压到钨层9;塑料端盖3起绝缘和密封作用。氧化铝绝缘层10(Al2O3)和Al2O3氧化铝介质层8(Al2O3):包裹钨层9,使钨层9与外界处于绝缘状态。The
为了解决现有技术存在的问题并克服其缺陷,实现提高电极的耐高压的性能的发明目的,本发明采取的技术方案为:In order to solve the problems existing in the prior art and overcome its defects, to achieve the purpose of the invention to improve the high voltage resistance performance of the electrode, the technical scheme adopted in the present invention is:
如图4所示,本发明干刻机台下电极,在所述的钛棒1与介质层9接触的一端,所述的电极基体4与陶瓷棒2相接触的端部均设置倒角,进行倒角处理。As shown in FIG. 4 , in the lower electrode of the dry engraving machine of the present invention, the end of the titanium rod 1 in contact with the
在所述的倒角内,设置致密Al2O3涂层6。使用致密等离子熔射工艺,在倒角结合处制备致密Al2O3涂层6,涂层孔隙率<2%,结合力>10MPa。Within said chamfer, a dense Al 2 O 3 coating 6 is provided. A dense Al 2 O 3 coating 6 was prepared at the chamfered joint using a dense plasma spraying process, the coating porosity was < 2%, and the bonding force was > 10 MPa.
使用该工艺结构方案,能够有效避免直流电极柱镶嵌时形成间隙等缺陷,保证后与绝缘层良好结合,达到耐击穿电压>6000V以上。The use of this process structure scheme can effectively avoid defects such as gaps formed when the DC electrode column is embedded, and ensure good combination with the insulating layer afterward, and achieve a breakdown voltage of more than 6000V.
所述的倒角尺寸为R0.5~R1.5。喷砂预处理下电极基体4倒角与陶瓷棒2的倒角处。The chamfering dimension is R0.5~R1.5. The chamfer of the
在所述的电极基体4内孔与陶瓷棒2之间的间隙5中,设置真空密封胶7。使用真空密封胶7将陶瓷棒2镶嵌在下电极基体4上。In the
在所述的钛棒1与介质层9接触的相反一端,所述的钛棒1与塑料端盖3通过环氧树脂镶嵌胶方式进行装配。At the opposite end of the titanium rod 1 in contact with the
使用该工艺结构方案,能够有效避免直流电极柱镶嵌时形成间隙等缺陷,保证后续绝缘层良好结合,耐击穿电压>6000V以上,可有效满足高世代和高制程面板刻蚀设备的需求。The use of this process structure scheme can effectively avoid defects such as gaps formed when the DC electrode columns are embedded, ensure that the subsequent insulating layers are well combined, and the breakdown voltage is greater than 6000V, which can effectively meet the needs of high-generation and high-process panel etching equipment.
为了实现与上述技术方案相同的发明目的,本发明还提供了以上所述的干刻机台下电极的制造工艺方法,包括以下步骤:In order to achieve the same purpose of the invention as the above technical solution, the present invention also provides the above-mentioned manufacturing process method of the electrode under the dry engraving machine, comprising the following steps:
1、对下电极基体4和陶瓷棒2进行倒角处理;1. Chamfer the
2、对下电极基体4和陶瓷棒2进行清洗干燥;2. Clean and dry the
3、对陶瓷棒2与电极基体4、钛棒1和塑料密封盖3进行镶嵌处理;3. Inlay the
4、对倒角喷砂处理;4. Sandblasting the chamfer;
5、等离子熔射致密Al2O3涂层6;5. Plasma spraying dense Al 2 O 3 coating 6;
6、对致密Al2O3涂层6进行打磨和喷砂处理;6. Grinding and sandblasting the dense Al 2 O 3 coating 6;
7、氧化铝绝缘层10熔射喷涂;7. The aluminum
8、钨层9熔射喷涂;8.
9、氧化铝介质层8熔射喷涂。9. The
在所述的步骤1中,使用倒角工具手工加工出下电极基体4的倒角,倒角大小为R0.5~R1.5;通过加工中心研磨刀具加工出陶瓷棒2的倒角,倒角大小为R0.5~R1.5。In the step 1, the chamfering of the
在所述的步骤2中,使用高压水洗清洗下电极;然后使用压缩空气将下电极表面吹干;使用超声波清洗陶瓷棒2,然后使用压缩空气孔吹干;最后将下电极和陶瓷棒2放入烘箱内进行50~100℃干燥,时间为12~36h。In the said
所述的高压水洗使用的去离子水电阻率大于4MΩ·cm,压力为80~150bar。The resistivity of the deionized water used in the high-pressure water washing is greater than 4 MΩ·cm, and the pressure is 80-150 bar.
所述的超声波清洗使用的去离子水电阻率大于4MΩ·cm,超声强度为6~12W/inch2。The resistivity of deionized water used in the ultrasonic cleaning is greater than 4MΩ·cm, and the ultrasonic intensity is 6-12W/inch 2 .
在所述的步骤3中,使用真空密封胶涂抹在陶瓷棒2外表面至倒角处,然后镶嵌到下电极基体4上,放入烘箱进行40~80℃、时间1~5h的固化处理;然后使用环氧树脂胶镶嵌钛棒1和塑料密封盖3。In the
在所述的步骤4中,使用纯度大于99.5%白刚玉砂材,目数60#~100#,喷砂压力0.2~0.6MPa,喷砂距离300~600mm,对倒角处进行喷砂处理。喷砂后表面粗糙度大于Ra2.5μm。In the
在所述的步骤5中,等离子熔射致密涂层6使用Al2O3粉末,粉末粒度为5~45μm,纯度大于99.9%。In the
等离子熔射致密涂层6的喷涂工艺参数为:主气Ar流量45~55L/min,次气H2流量10~15L/min,电压65~75V,电流600~700A,送粉量为5~15g/min,喷涂距离100~150mm。涂层孔隙率<2%,结合力达到10MPa以上。The spraying process parameters of the plasma spray
在所述的步骤6中,使用200#~1200#白刚玉砂纸打磨致密Al2O3涂层6,使其与下电极基体4表面齐平;然后对其进行喷砂处理,使用纯度大于99.5%白刚玉砂材,目数60#~100#,喷砂压力0.2~0.6MPa,喷砂距离300~600mm,对倒角处进行喷砂处理,喷砂后表面粗糙度大于Ra2.5μm。In the
在所述的步骤7中,等离子熔射氧化铝绝缘层10使用Al2O3粉末,粉末粒度5~45μm,纯度大于99.9%。In the step 7, Al 2 O 3 powder is used for the plasma sprayed aluminum
等离子熔射氧化铝绝缘层10的喷涂工艺参数为:主气Ar流量35~50L/min,次气H2流量6~10L/min,电压60~70V,电流550~650A,送粉量为10~30g/min,喷涂距离100~150mm。涂层孔隙率<4%,结合力达到8MPa以上。The spraying process parameters of the plasma sprayed
所述的步骤8中,等离子熔射电极层钨层9使用钨粉末,粉末粒度45~125μm,纯度大于99.9%。In the
等离子熔射电极层钨层9的喷涂工艺参数为:主气Ar流量40~50L/min,次气H2流量6~12L/min,电压550~650V,电流550~650A,送粉量为20~40g/min,喷涂距离120~150mm,钨涂层电阻值低于1Ω,结合力达到10MPa以上。The spraying process parameters of the
在所述的步骤9中,等离子熔射氧化铝介质层8使用Al2O3粉末,粉末粒度5~45μm,纯度大于99.9%,In the
等离子熔射氧化铝介质层8的喷涂工艺参数为:主气Ar流量35~50L/min,次气H2流量6~10L/min,电压60~70V,电流550~650A,送粉量为10~30g/min,喷涂距离100~150mm。涂层孔隙率<4%,结合力达到8MPa以上。The spraying process parameters of the plasma sprayed
上面结合附图对本发明进行了示例性描述,显然本发明具体实现并不受上述方式的限制,只要采用了本发明的方法构思和技术方案进行的各种非实质性的改进,或未经改进将本发明的构思和技术方案直接应用于其它场合的,均在本发明的保护范围之内。The present invention has been exemplarily described above in conjunction with the accompanying drawings. Obviously, the specific implementation of the present invention is not limited by the above methods, as long as various insubstantial improvements made by the method concept and technical solutions of the present invention are adopted, or no improvement is made. It is within the protection scope of the present invention to directly apply the concepts and technical solutions of the present invention to other occasions.
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