CN114743857A - Dry etching machine bottom electrode and manufacturing process method thereof - Google Patents

Abstract

The invention discloses a lower electrode of a dry engraving machine, comprising a lower electrode base, a titanium rod, and a ceramic rod arranged between the lower electrode base and the titanium rod; the end of the titanium rod is in contact with a tungsten layer; One end of the layer in contact and the end of the electrode base in contact with the ceramic rod are provided with chamfers. The invention also discloses a manufacturing process method of the lower electrode. The above technical solution can effectively avoid defects such as gaps formed when the DC electrode columns are embedded, ensure good bonding of the subsequent insulating layers, and withstand breakdown voltages > 6000V, which can effectively meet the needs of high-generation and high-process panel etching equipment.

Description

A kind of dry engraving machine lower electrode and its manufacturing process method

technical field

The invention belongs to the technical field of liquid crystal panel manufacturing process and equipment. More specifically, the present invention relates to an electrode under a dry engraving machine. The present invention also relates to its manufacturing process method.

Background technique

The dry engraving machine is the key equipment in the production process of liquid crystal panels and semiconductors. The lower electrode is the key component in the dry engraving machine; the lower electrode is a typical sandwich structure, consisting of a bottom insulating layer, a tungsten conductive layer and a surface dielectric layer.

When the etching machine is working, the glass substrate is placed on the surface of the lower electrode and is in direct contact with the dielectric layer of the lower electrode. The DC power supply is connected to the tungsten conductive layer through the DC electrode column on the back of the lower electrode to make it negatively charged, and the lower surface of the glass generates a positive induction. Coulomb stress generated between electric charges, positive charges and negative charges makes the glass adsorb on the surface of the lower electrode, preventing the substrate from moving during the etching process, ensuring the effectiveness and stability of the etching process, and the plasma on the upper surface of the glass substrate and the etching cavity. Gas-generating chemical and physical action etch away excess layers to form the desired circuit diagram.

The lower electrode is divided into two types according to the structure of the surface dielectric layer:

1. Flat type, as shown in Figure 1;

2. Emboss type, as shown in Figure 2.

Although the structure of the lower electrode dielectric layer of the two types is slightly different, the effect is the same in the dry etching machine: adsorption of glass during etching, cooling of glass, maintaining flatness of glass, maintaining uniformity of etching, glass uniformity of temperature.

Both types of lower electrodes include the following main structures: earth bank 11 (Dam), ejector pin 12 (Lift pin), He air hole 13, DC electrode column 14, insulating layer 10 (Al ₂ O ₃ ), tungsten layer 9 (W) , the dielectric layer 8 (Al ₂ O ₃ ).

These structures work as follows:

Earth embankment 11 (Dam): supporting glass, sealed with glass substrate to prevent excessive overflow of cooling He gas;

Lift pin 12 (Lift pin): eject the glass substrate;

He air hole 13: pass He gas to cool the glass substrate;

DC electrode column 14: connect the tungsten layer to charge the tungsten layer and absorb the glass;

The aluminum oxide insulating layer 10 (Al ₂ O ₃ ) and the Al ₂ O ₃ aluminum oxide dielectric layer 8 (Al ₂ O ₃ ): wrap the tungsten layer 9 so that the tungsten layer 9 is insulated from the outside world;

The tungsten layer 9 is an electrode layer, which is connected to the direct electrode column. After the tungsten layer 9 is charged, the glass is adsorbed by electrostatic induction.

When the lower electrode is working, a high voltage of 2000-3000V will be applied to the DC electrode column 14 . With the gradual increase of the panel generation to G10.5, and the popularization of high-process LTPS (low temperature polysilicon) and AMOLED (flexible organic light emitting diode) panels, a larger Coulomb force is required to adsorb the glass substrate; The voltage rises to 3000-5000V.

1. A typical DC power supply column structure is shown in Figure 3, which includes a titanium rod 1, a ceramic rod 2, and a plastic end cap 3. The ceramic rod 2 is adjacent to the lower electrode base 4 to ensure the insulation between the titanium rod 1 and the lower electrode base 4; the titanium rod 1 is connected to the DC power supply, and the voltage is applied to the tungsten layer 9; the plastic end cap 3 plays the role of insulation and sealing.

2. The DC electrode column installation process scheme in the prior art is as follows:

The lower electrode base 4 is heated to > 200°C, and then placed into the insulating ceramic rod 2, and the ceramic rod 2 is embedded on the lower electrode base 4 by thermal expansion and contraction; the titanium rod 1 and the plastic end cap 3 are embedded with epoxy resin Glue assembly.

This method can ensure that the ceramic rod 2 and the lower electrode base 4 are well inlaid and fully ensure the insulation between the titanium rod 1 and the lower electrode base 4 , but a gap 5 is easily formed between the lower electrode base 4 and the ceramic rod 2 . When the Al ₂ O ₃ insulating layer is subsequently sprayed by plasma, the coating at the gap 5 is poorly bonded. When the DC is pressurized between the electric column 14 and the lower electrode substrate 4, especially when the voltage is greater than 3000V, it is very easy to be at the gap 5. An electrical breakdown occurs, resulting in the failure of the lower electrode function.

The traditional installation process of the DC electrode column 14 has been unable to meet the requirements of use, and the DC electrode column 14 often has insufficient withstand voltage and electrical breakdown occurs, resulting in the unusable lower electrode, which seriously affects the production capacity of the client equipment. There is an urgent need for a more withstand voltage. Process scheme of the direct electrode column 14 .

SUMMARY OF THE INVENTION

The invention provides an electrode under a dry engraving machine, the purpose of which is to improve the high voltage resistance performance of the electrode.

In order to achieve the above object, the technical scheme adopted in the present invention is:

The lower electrode of the dry engraving machine of the present invention includes a lower electrode base, a titanium rod, and a ceramic rod arranged between the lower electrode base and the titanium rod; the end of the titanium rod is in contact with the dielectric layer; The end that is in contact with the dielectric layer and the end of the electrode base that is in contact with the ceramic rod are provided with chamfers.

Within said chamfer, a dense Al ₂ O ₃ coating is provided.

In the gap between the inner hole of the electrode base and the ceramic rod, a vacuum sealant is arranged.

At the opposite end of the titanium rod in contact with the dielectric layer, the titanium rod and the plastic end cap are assembled by epoxy resin inlay glue.

In order to achieve the same purpose of the invention as the above technical solution, the present invention also provides the above-mentioned manufacturing process method of the electrode under the dry engraving machine, comprising the following steps:

1. Chamfer the lower electrode base and ceramic rod;

2. Clean and dry the lower electrode substrate and ceramic rod;

3. Mosaic processing of ceramic rods and electrode substrates, titanium rods and plastic sealing covers;

4. Sandblasting the chamfer;

5. Plasma spraying dense Al ₂ O ₃ coating;

6. Grinding and sandblasting the dense Al ₂ O ₃ coating;

7. The aluminum oxide insulating layer is sprayed and sprayed;

8. Tungsten layer spray spraying;

9. Alumina dielectric layer is sprayed and sprayed.

The present invention adopts the above technical solution, which can effectively avoid defects such as gaps formed when the DC electrode columns are inlaid, ensure that the subsequent insulating layers are well combined, and the breakdown voltage is more than 6000V, which can effectively meet the needs of high-generation and high-process panel etching equipment.

Description of drawings

The contents shown in the attached drawings and the symbols in the drawings are briefly explained as follows:

Fig. 1 is the structure schematic diagram of the lower electrode of the dry engraving machine of flat structure;

Fig. 2 is the structural schematic diagram of the electrode under the dry engraving machine of the bump-type structure;

3 is a schematic structural diagram of a DC electrode column in the prior art;

FIG. 4 is a schematic diagram of the structure of the improved high-voltage-resistant DC electrode column of the present invention.

The figure is marked as:

1. Titanium rod, 2. Ceramic rod, 3. Plastic end cap, 4. Lower electrode substrate, 5. Gap, 6. Dense Al ₂ O ₃ coating, 7. Vacuum sealant, 8. Alumina dielectric layer (Al ₂ O ₃ ), 9, tungsten layer (W layer), 10, alumina insulating layer (Al ₂ O ₃ ), 11, earth bank (Dam), 12, lift pin, 13, He pores, 14, DC electrode column, 15, emboss.

Detailed ways

The specific embodiments of the present invention will be described in further detail below with reference to the accompanying drawings, through the description of the embodiments, to help those skilled in the art to have a more complete, accurate and in-depth understanding of the inventive concept and technical solutions of the present invention.

As shown in FIG. 3 , the structure of the present invention is a lower electrode of a dry engraving machine, including a lower electrode base 4 , a titanium rod 1 , a plastic end cap 3 , and a ceramic rod disposed between the lower electrode base 4 and the titanium rod 1 . 2; the end of the titanium rod 1 is in contact with the dielectric layer 9 .

The ceramic rod 2 is adjacent to the lower electrode base 4 to ensure the insulation between the titanium rod 1 and the lower electrode base 4; the titanium rod 1 is connected to the DC power supply, and the voltage is applied to the tungsten layer 9; the plastic end cap 3 plays the role of insulation and sealing. The aluminum oxide insulating layer 10 (Al ₂ O ₃ ) and the Al ₂ O ₃ aluminum oxide dielectric layer 8 (Al ₂ O ₃ ): wrap the tungsten layer 9 so that the tungsten layer 9 is insulated from the outside world.

In order to solve the problems existing in the prior art and overcome its defects, to achieve the purpose of the invention to improve the high voltage resistance performance of the electrode, the technical scheme adopted in the present invention is:

As shown in FIG. 4 , in the lower electrode of the dry engraving machine of the present invention, the end of the titanium rod 1 in contact with the dielectric layer 9 and the end of the electrode substrate 4 in contact with the ceramic rod 2 are provided with chamfers, Chamfering is performed.

Within said chamfer, a dense Al ₂ O ₃ coating 6 is provided. A dense Al ₂ O ₃ coating 6 was prepared at the chamfered joint using a dense plasma spraying process, the coating porosity was < 2%, and the bonding force was > 10 MPa.

The use of this process structure scheme can effectively avoid defects such as gaps formed when the DC electrode column is embedded, and ensure good combination with the insulating layer afterward, and achieve a breakdown voltage of more than 6000V.

The chamfering dimension is R0.5～R1.5. The chamfer of the electrode base 4 and the chamfer of the ceramic rod 2 under sandblasting pretreatment.

In the gap 5 between the inner hole of the electrode base 4 and the ceramic rod 2, a vacuum sealant 7 is arranged. The ceramic rod 2 is embedded on the lower electrode base body 4 using vacuum sealant 7 .

At the opposite end of the titanium rod 1 in contact with the dielectric layer 9, the titanium rod 1 and the plastic end cap 3 are assembled by epoxy resin inlaying glue.

The use of this process structure scheme can effectively avoid defects such as gaps formed when the DC electrode columns are embedded, ensure that the subsequent insulating layers are well combined, and the breakdown voltage is greater than 6000V, which can effectively meet the needs of high-generation and high-process panel etching equipment.

In order to achieve the same purpose of the invention as the above technical solution, the present invention also provides the above-mentioned manufacturing process method of the electrode under the dry engraving machine, comprising the following steps:

1. Chamfer the lower electrode base 4 and the ceramic rod 2;

2. Clean and dry the lower electrode substrate 4 and the ceramic rod 2;

3. Inlay the ceramic rod 2 with the electrode base 4, the titanium rod 1 and the plastic sealing cover 3;

4. Sandblasting the chamfer;

5. Plasma spraying dense Al ₂ O ₃ coating 6;

6. Grinding and sandblasting the dense Al ₂ O ₃ coating 6;

7. The aluminum oxide insulating layer 10 is sprayed and sprayed;

8. Tungsten layer 9 spray spraying;

9. The alumina dielectric layer 8 is sprayed and sprayed.

In the step 1, the chamfering of the lower electrode base 4 is manually machined with a chamfering tool, and the chamfering size is R0.5-R1.5; The angle size is R0.5～R1.5.

In the said step 2, use high pressure water washing to clean the lower electrode; then use compressed air to dry the surface of the lower electrode; use ultrasonic to clean the ceramic rod 2, and then use the compressed air hole to dry; finally put the lower electrode and the ceramic rod 2 Put it into an oven for drying at 50 to 100°C for 12 to 36 hours.

The resistivity of the deionized water used in the high-pressure water washing is greater than 4 MΩ·cm, and the pressure is 80-150 bar.

The resistivity of deionized water used in the ultrasonic cleaning is greater than 4MΩ·cm, and the ultrasonic intensity is 6-12W/inch ² .

In the step 3, vacuum sealant is applied to the outer surface of the ceramic rod 2 to the chamfer, and then embedded on the lower electrode base 4, and then placed in an oven for curing at 40-80° C. for 1-5 hours; Then use epoxy glue to inlay the titanium rod 1 and the plastic sealing cover 3.

In the step 4, use white corundum sand material with a purity greater than 99.5%, a mesh number of 60# to 100#, a blasting pressure of 0.2 to 0.6 MPa, and a blasting distance of 300 to 600 mm to blast the chamfers. The surface roughness after sandblasting is greater than Ra2.5μm.

In the step 5, the plasma spraying dense coating 6 uses Al ₂ O ₃ powder, the particle size of the powder is 5-45 μm, and the purity is greater than 99.9%.

The spraying process parameters of the plasma spray dense coating 6 are: the main gas Ar flow rate is 45-55L/min, the secondary gas _H2 flow rate is 10-15L/min, the voltage is 65-75V, the current is 600-700A, and the powder feeding amount is 5- 15g/min, spraying distance 100～150mm. The porosity of the coating is less than 2%, and the bonding force reaches more than 10MPa.

In the step 6, use 200#～1200# white corundum sandpaper to polish the dense Al ₂ O ₃ coating 6 to make it flush with the surface of the lower electrode substrate 4; % White corundum sand material, mesh 60#～100#, blasting pressure 0.2～0.6MPa, blasting distance 300～600mm, blasting the chamfer, the surface roughness after blasting is greater than Ra2.5μm.

In the step 7, Al ₂ O ₃ powder is used for the plasma sprayed aluminum oxide insulating layer 10 , the particle size of the powder is 5-45 μm, and the purity is greater than 99.9%.

The spraying process parameters of the plasma sprayed alumina insulating layer 10 are: the main gas Ar flow rate is 35-50L/min, the secondary gas _H2 flow rate is 6-10L/min, the voltage is 60-70V, the current is 550-650A, and the powder feeding amount is 10 ～30g/min, spraying distance 100～150mm. The porosity of the coating is less than 4%, and the bonding force reaches more than 8MPa.

In the step 8, tungsten powder is used for the tungsten layer 9 of the plasma spray electrode layer, the particle size of the powder is 45-125 μm, and the purity is greater than 99.9%.

The spraying process parameters of the tungsten layer 9 of the plasma spray electrode layer are: the main gas Ar flow rate is 40-50L/min, the secondary gas _H2 flow rate is 6-12L/min, the voltage is 550-650V, the current is 550-650A, and the powder feeding amount is 20 ～40g/min, the spraying distance is 120～150mm, the resistance value of the tungsten coating is lower than 1Ω, and the bonding force is more than 10MPa.

In the step 9, the Al ₂ O ₃ powder is used for the plasma sprayed alumina dielectric layer 8, the powder particle size is 5-45 μm, and the purity is greater than 99.9%.

The spraying process parameters of the plasma sprayed alumina dielectric layer 8 are: the main gas Ar flow rate is 35~50L/min, the secondary gas _H2 flow rate is 6~10L/min, the voltage is 60~70V, the current is 550~650A, and the powder feeding amount is 10 ～30g/min, spraying distance 100～150mm. The porosity of the coating is less than 4%, and the bonding force is above 8MPa.

The present invention has been exemplarily described above in conjunction with the accompanying drawings. Obviously, the specific implementation of the present invention is not limited by the above methods, as long as various insubstantial improvements made by the method concept and technical solutions of the present invention are adopted, or no improvement is made. It is within the protection scope of the present invention to directly apply the concepts and technical solutions of the present invention to other occasions.

Claims (10)

1. A lower electrode of a dry engraving machine, comprising a lower electrode base (4), a titanium rod (1), and a ceramic rod (2) arranged between the lower electrode base (4) and the titanium rod (1); the described The end of the titanium rod (1) is in contact with the tungsten layer (9). The ends of the rods (2) in contact are provided with chamfers. 2. The electrode under the dry engraving machine according to claim 1, characterized in that: in the chamfer, a dense Al ₂ O ₃ coating (6) is provided. 3. The lower electrode of the dry engraving machine according to claim 1, wherein the chamfer is R0.5～R1.5. 4. The electrode under the dry engraving machine according to claim 1, characterized in that: in the gap (5) between the inner hole of the electrode substrate (4) and the ceramic rod (2), a vacuum sealant is arranged (7). 5. The bottom electrode of the dry engraving machine according to claim 1, characterized in that: at the opposite end of the titanium rod (1) in contact with the dielectric layer (9), the titanium rod (1) and the plastic The end cap (3) is assembled by epoxy resin inlay glue. 6. According to the manufacturing process method of the bottom electrode of the dry engraving machine according to any one of claims 1 to 5, it is characterized in that: the manufacturing process method comprises the following steps: 1), chamfering the lower electrode substrate (4) and the ceramic rod (2); 2), cleaning and drying the lower electrode substrate (4) and the ceramic rod (2); 3), inlaying the ceramic rod (2) with the electrode base body (4), the titanium rod (1) and the plastic sealing cover (3); 4), sandblasting the chamfer; 5), plasma spraying dense Al ₂ O ₃ coating (6); 6), grinding and sandblasting the dense Al ₂ O ₃ coating (6); 7), the aluminum oxide insulating layer (10) is sprayed and sprayed; 8), tungsten layer (9) spray spraying; 9), the alumina dielectric layer (8) is sprayed and sprayed. 7. according to the manufacturing process method of the lower electrode of the dry engraving machine table according to claim 6, it is characterized in that: in the described step 1), use the chamfering tool to manually process the chamfer of the lower electrode base (4), The size of the chamfer is R0.5～R1.5; the chamfer of the ceramic rod (2) is machined by the grinding tool of the machining center, and the size of the chamfer is R0.5～R1.5. 8. according to the manufacturing process method of the bottom electrode of the dry engraving machine according to claim 6, it is characterized in that: in the described step 2), use high pressure washing to clean the bottom electrode; Then use compressed air to dry the bottom electrode surface ; Use ultrasonic to clean the ceramic rod 2, and then use the compressed air hole to dry it; finally, put the lower electrode and the ceramic rod 2 into an oven for drying at 50 to 100°C for 12 to 36 hours. 9 . The method for manufacturing the lower electrode of the dry engraving machine according to claim 8 , wherein the resistivity of the deionized water used for the high-pressure washing is greater than 4 MΩ·cm, and the pressure is 80-150 bar. 10 . 10. according to the manufacturing process method of the bottom electrode of the dry engraving machine according to claim 8, it is characterized in that: the resistivity of deionized water used in the ultrasonic cleaning is greater than 4MΩ·cm, and the ultrasonic intensity is 6～12W/inch ² .

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