CN114740008A - Super-resolution wafer defect detection system - Google Patents
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- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
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- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
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- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
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- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
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- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
- G01N2021/8887—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges based on image processing techniques
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Abstract
The utility model provides a super-resolution wafer defect detecting system, including illumination element and formation of image subassembly, illumination element transmission light source carries out the facula to the formation of image subassembly in and detects, illumination element includes the laser instrument, laser instrument transmission laser beam to spatial filter, spatial filter is through doing filtering process to laser beam, generate filtering light beam, filtering light beam penetrates the beam splitter prism through the lens, beam splitter prism divides filtering light beam into first light beam and second light beam, spatial light modulator is penetrated into to first light beam, spatial light modulator carries out parameter modulation to first light beam, the second light beam that beam splitter prism jetted out passes through the aperture and gets into first objective, see through first objective and generate the detecting light beam. The single-point light spot is generated through the diffractive optical mechanism and is imaged on the object plane of the optical system so as to realize illumination of the imaged object, the imaged object is scanned through the single-point light spot, the image information of the scanned imaged object is acquired, image reconstruction is carried out according to the image information, and further the imaging efficiency is improved.
Description
Technical Field
The invention relates to the technical field of optical detection, in particular to a super-resolution wafer defect detection system.
Background
Optical microscopes enable real-time, dynamic, fast imaging, as compared to electron microscopes, one of the most vital scientific achievements in human history, and in the last decades various super-resolution techniques have been developed, including Confocal Laser Scanning Microscopy (CLSM), Structured Illumination Microscopy (SIM), Confocal Microscopy (CM), stimulated emission depletion microscopy (STED), random optical reconstruction microscopy (STORM), photo-activated positioning microscopy (PALM), and reversible saturable/switchable optical transition microscopy (RESOLFT), among which SIM has a relatively high speed and wide field imaging capability at low illumination intensity, making it available for extensive research, increasing the cut-off frequency of the optical transfer function by spatially patterned illumination light, to obtain theoretical dual resolution.
In the above several super-resolution technologies, CLSM is super-resolution reconstruction implemented by using a single-point scanning object, but the super-resolution capability is limited and cannot be adjusted, SIM is to load high-frequency information into an image by using structured light, and obtain a super-resolution image after reconstruction, but receive the limitation of a field of view and improve the resolution by at most one time, and STED and STORM are to compress a point spread function by using the difference between stimulated radiation of fluorescent molecules and light waves of autofluorescence, and are not to detect defects of a super-resolution wafer by improving an optical system.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provide a super-resolution wafer defect detection system capable of improving the detection speed.
The technical problem to be solved by the invention is realized by adopting the following technical scheme:
a super-resolution wafer defect detection system comprises an illumination assembly and an imaging assembly, wherein the illumination assembly emits a light source to the imaging assembly for light spot detection;
the illumination assembly comprises a laser, a spatial filter, a lens, a beam splitter prism, a spatial light modulator and a first objective lens, wherein the laser emits a laser beam to the spatial filter, the spatial filter generates a filtering beam by filtering the laser beam, the filtering beam is emitted into the beam splitter prism through the lens, the beam splitter prism divides the filtering beam into a first beam and a second beam, the first beam is emitted into the spatial light modulator, the spatial light modulator performs parametric modulation on the first beam, the second beam is emitted into the first objective lens, and a detection beam is generated by penetrating through the first objective lens;
the imaging component comprises an electric objective table, a second objective lens and a detector, wherein the electric objective table is used for bearing a wafer sample to be detected, the detection light beam irradiates the sample to be detected on the electric objective table, the electric objective table carries the sample to be detected to move to the detection light beam, reflected light is generated by the irradiation of the detection light beam and returns to the beam splitter prism due to the fact that the sample to be detected is opaque, a third light beam is generated and transmitted to the detector through the second objective lens to be imaged, the intensity pattern of the point array is imaged on the sensor through the second objective lens, firstly, the relative position of each light spot is determined to calculate the central position of each light spot, the scanning image of each light spot is obtained by calculating the intensity of the center of each light spot, and finally, the scanning images of all the light spots are combined into a complete image;
the electric objective table is provided with a diffractive optical mechanism, the diffractive optical mechanism is used for providing a super-resolution spot array, and the diffractive optical mechanism modifies the amplitude distribution of a focal plane of the diffractive optical mechanism through a G-S algorithm of gradually supplementing zero to constrain the spot array;
the G-S algorithm for gradually filling zero is as follows:
in the formula: area I and Area II denote the target Area of the spot array and the background Area in the focal plane, respectively, ItGamma represents the coefficient of the relationship between the resolution enhancement and the optical efficiency, and epsilon represents the resolution constraint coefficient, wherein the value of 0 < epsilon < 1.
Preferably, the second light beam emitted from the beam splitter prism enters the first objective lens through an aperture.
Preferably, the formula for calculating γ in the step-by-step zero-padding G-S algorithm is:
γ＝m/M；
in the formula: m and M are the diameters of the target area of the spot array and the background area on the focal plane, respectively.
Preferably, the sampling interval on the focal plane of the diffractive optical mechanism is K, where:
K＝λf/D；
where λ is the wavelength, f is the focal length of the first objective lens, and D is the diameter of the diffractive optical mechanism.
Preferably, the intensity distribution of the light spot array in the step-by-step zero-filling G-S algorithm is uniform in intensity or distributed according to a certain functional rule.
Preferably, the diffractive optical mechanism is any one of a holographic optical element, a micro-nano optical element, a binary optical element, a super-structured surface, a spatial light modulator or other various elements capable of realizing light field phase modulation and/or amplitude modulation.
Preferably, the detector is any one of a complementary metal oxide semiconductor camera, a charge coupled camera, a light field camera or other devices capable of realizing image information acquisition.
Preferably, the moving mode of the electric stage is any one of a horizontal scanning mode, a vertical scanning mode, an oblique scanning mode and other plane full coverage scanning modes.
The invention has the advantages and positive effects that:
the single-point light spot is generated through the diffraction optical mechanism and is imaged on the object plane of the optical system so as to realize illumination on the imaged object, the imaged object is scanned through the single-point light spot, the image information of the scanned imaged object is obtained, image reconstruction is carried out according to the image information, and then the imaging efficiency is improved.
Drawings
FIG. 1 is a schematic diagram of an optical system configuration of the present invention;
FIG. 2 is a schematic front view of the motorized stage of the present invention;
FIG. 3 is a flow chart of the step-by-step zero-filling G-S algorithm of the present invention;
FIG. 4 is a schematic representation of the image sizes formed by different spot arrays of the present invention;
FIG. 5 is a graph showing the results of detection of the spot array sample of the present invention.
In the figure: 1. a laser; 2. a spatial filter; 3. a lens; 4. a beam splitter prism; 5. a spatial light modulator; 6. the diameter of the hole; 7. a first objective lens; 8. an electric stage; 9. a second objective lens; 10. and a detector.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It will be understood that when an element is referred to as being "secured to" another element, it can be directly on the other element or intervening elements may also be present. When a component is referred to as being "connected" to another component, it can be directly connected to the other component or intervening components may also be present. When a component is referred to as being "disposed on" another component, it can be directly on the other component or intervening components may also be present. The terms "vertical," "horizontal," "left," "right," and the like as used herein are for illustrative purposes only.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used in the description of the invention herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.
The embodiments of the invention are further described in the following with reference to the drawings:
as shown in fig. 1, the super-resolution wafer defect detection system according to the present invention includes an illumination assembly and an imaging assembly, wherein the illumination assembly emits a light source to the imaging assembly for light spot detection;
the illumination component comprises a laser 1, a spatial filter 2, a lens 3, a beam splitter prism 4, a spatial light modulator 5 and a first objective lens 7, the laser 1 emits a laser beam to the spatial filter 2, the spatial filter 2 generates a filtered beam by filtering the laser beam, the filtered beam enters the beam splitter prism 4 through the lens 3, the beam splitter prism 4 divides the filtered beam into a first beam and a second beam, the first beam enters the spatial light modulator 5, the spatial light modulator 5 performs parametric modulation on the first beam, the second beam emitted by the beam splitter prism 4 enters the first objective lens 7 through an aperture 6 and passes through the first objective lens 7 to generate a detection beam, and the first objective lens 7 has the functions of illumination and imaging;
the imaging assembly comprises an electric objective table 8, a second objective lens 9 and a detector 10, wherein the electric objective table 8 is used for bearing a wafer sample to be detected, a detection light beam irradiates the sample to be detected on the electric objective table 8, the sample to be detected moves to the detection light beam by moving the electric objective table 8, reflected light is generated by the irradiation of the detection light beam and returns to the beam splitter prism 4 due to the fact that the sample to be detected is opaque, a third light beam is generated and transmitted to the detector 10 to be imaged through the second objective lens 9, the intensity pattern of the point array is imaged on the sensor through the second objective lens 9, firstly, the relative position of each light spot is determined to calculate the central position of the light spot, the scanning image of each light spot is obtained by calculating the intensity of the center of the light spot, and finally, the scanning images of all the light spots are combined into a complete image;
the electric stage 8 is provided with a diffractive optical mechanism, as shown in fig. 2, the diffractive optical mechanism is used for providing a super-resolution spot array, as shown in fig. 3, the diffractive optical mechanism modifies the amplitude distribution of the focal plane thereof by a step-by-step zero-filling G-S algorithm to constrain the spot array, and the step-by-step zero-filling G-S algorithm is as follows:
in the formula: area I and Area II denote the target Area of the spot array and the background Area in the focal plane, respectively, ItThe intensity distribution of the array of light spots, the intensity distribution of the array of light spots ItThe equal intensity is uniformly distributed or distributed according to a certain function rule, gamma represents a relation coefficient between the resolution enhancement and the optical efficiency, epsilon represents a resolution constraint coefficient, and epsilon is more than 0 and less than 1.
The formula for calculating gamma in the step-by-step zero-filling G-S algorithm is as follows:
γ＝m/M；
in the formula: m and M are the diameters of the target area of the spot array and the background area on the focal plane, respectively.
In order to improve the resolution of the optical system, the resolution of the spot array is first improved, another important factor of the spot array is to be far away from the spatial zeroth order to ensure high quality in practical applications, and meanwhile, in order to ensure good performance, the spot array is required to have a small focal spot, high optical efficiency and low uniformity error, and the sampling interval on the focal plane of the diffractive optical mechanism is equivalent to K, that is:
K＝λf/D；
where λ is the wavelength, f is the focal length of the first objective lens 7, and D is the diameter of the diffractive optical mechanism.
In general, the size of the airy spot is approximately equal to 0.9K, which is defined as the full width at half maximum, and the sampling interval on the focal plane can be reduced to 0.125K by zero addition in order to obtain a more accurate spot.
Fig. 4 shows the spot images under different spot arrays, a1 and a2 are 3 × 3 spot arrays, b1 and b2 are 5 × 5 spot arrays, a1 is 50% spot size, i.e., airy spot size, a2 is 70% spot size, airy spots of a1 and a2 are 400 × 400 pixels, airy spots of b1 and b2 are 550 × 550 pixels, airy spots of c are 400 × 400 pixels, and airy spots of d1 and d2 are 400 × 400 pixels.
As shown in fig. 5, the a-image is a 3 × 3 spot array, the b-image is the result of illumination of the wide field of view using the second objective lens with an aperture NA of 0.25, and the c-image is the image reconstructed by the best proposed optical system.
In principle, it can be experimentally proven that the optical system can achieve about twice the resolution by using a 3 x 3 super-resolution spot array with 50% airy spot size as the illumination beam, but it should be noted that there is no necessary relationship between the number/density of the spot array (3 x 3 or 5 x 5) distribution and the resolution of the image, the maximum frequency is determined by the size of the illumination spot, in other words, the spatial frequency of the optical system is not expanded, but the Modulation Transfer Function (MTF) is improved, for better understanding of the mechanism of resolution enhancement, the MTF of a single-point super-resolution (SS) microscope, a Confocal Microscope (CM) and a diffraction limited system with an incident wavelength of 561nm with 50% airy spot size as the illumination beam under the same Numerical Aperture (NA) of 0.6 is further selected, and the experimental data show that the spectral profile of the SS microscope is better, the ASM optical system carries out super-resolution on the illumination light spot array in the scanning process, and a super-resolution image can be reconstructed only by calculating the light intensity and the central coordinates of the light spots without carrying out complex data processing.
In the optical system for detecting the defect of the super-resolution wafer, the diffractive optical mechanism may be any one of a holographic optical element, a micro-nano optical element, a binary optical element, a super-structure surface, a spatial light modulator or other various elements capable of realizing light field phase modulation and/or amplitude modulation, the detector 10 may be any one of a complementary metal oxide semiconductor camera, a charge coupled camera, a light field camera or other devices capable of realizing image information acquisition, and the moving mode of the electric stage 8 may be any one of a horizontal scanning mode, a vertical scanning mode, an oblique scanning mode or other plane full-coverage scanning modes.
The single-point light spot is generated through the diffraction optical mechanism and is imaged on the object plane of the optical system so as to realize illumination on the imaged object, the imaged object is scanned through the single-point light spot, the image information of the scanned imaged object is obtained, image reconstruction is carried out according to the image information, and then the imaging efficiency is improved.
It should be emphasized that the embodiments described herein are illustrative rather than restrictive, and thus the present invention is not limited to the embodiments described in the detailed description, but other embodiments derived from the technical solutions of the present invention by those skilled in the art are also within the scope of the present invention.
Claims (8)
1. A super-resolution wafer defect detection system is characterized in that: the device comprises an illumination assembly and an imaging assembly, wherein the illumination assembly emits a light source to the imaging assembly for light spot detection;
the illumination assembly comprises a laser (1), a spatial filter (2), a lens (3), a beam splitter prism (4), a spatial light modulator (5) and a first objective lens (7), wherein the laser (1) emits a laser beam to the spatial filter (2), the spatial filter (2) performs filtering processing on the laser beam to generate a filtered beam, the filtered beam enters the beam splitter prism (4) through the lens (3), the beam splitter prism (4) divides the filtered beam into a first beam and a second beam, the first beam enters the spatial light modulator (5), the spatial light modulator (5) performs parametric modulation on the first beam, the second beam enters the first objective lens (7), and a detection beam is generated through the first objective lens (7);
the imaging assembly comprises an electric objective table (8), a second objective lens (9) and a detector (10), the electric objective table (8) is used for bearing a wafer sample to be detected, the detection light beam is emitted to the sample to be detected on the electric objective table (8), the electric objective table (8) carries the sample to be detected to move to the detection light beam, a third light beam is generated through irradiation of the detection light beam and returns to the beam splitter prism (4), and the third light beam is transmitted to the detector (10) through the second objective lens (9) to be imaged;
the electric objective table (8) is provided with a diffractive optical mechanism, the diffractive optical mechanism is used for providing a super-resolution spot array, and the diffractive optical mechanism modifies the amplitude distribution of a focal plane of the diffractive optical mechanism through a step-by-step zero-filling G-S algorithm to constrain the spot array;
the G-S algorithm for gradually filling zero is as follows:
in the formula: area I and Area II denote the target Area of the spot array and the background Area in the focal plane, respectively, ItGamma represents the coefficient of the relationship between the resolution enhancement and the optical efficiency, and epsilon represents the resolution constraint coefficient, wherein the value of 0 < epsilon < 1.
2. The system of claim 1, wherein: the second light beam emitted by the beam splitting prism (4) enters the first objective lens (7) through an aperture (6).
3. The system of claim 1, wherein: the formula for calculating gamma in the step-by-step zero-filling G-S algorithm is as follows:
γ＝m/M；
in the formula: m and M are the diameters of the target area of the spot array and the background area in the focal plane, respectively.
4. The system of claim 1, wherein: the sampling interval on the focal plane of the diffractive optical mechanism is K, wherein:
K＝λf/D；
where λ is the wavelength, f is the focal length of the first objective lens (7), and D is the diameter of the diffractive optical mechanism.
5. The system of claim 1, wherein: the intensity distribution of the light spot array in the step-by-step zero filling G-S algorithm is equal intensity uniform distribution or is distributed according to a certain function rule.
6. The system of claim 1, wherein: the diffraction optical mechanism is any one of a holographic optical element, a micro-nano optical element, a binary optical element, a super-structured surface, a spatial light modulator or other various elements capable of realizing light field phase modulation and/or amplitude modulation.
7. The system of claim 1, wherein: the detector (10) is any one of a complementary metal oxide semiconductor camera, a charge coupled camera, a light field camera or other devices capable of realizing image information acquisition.
8. The system of claim 1, wherein: the moving mode of the electric objective table (8) is any one of a horizontal direction scanning type, a vertical direction scanning type, an inclined scanning type or other plane full-coverage scanning types.
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| CN116973380A (en) * | 2023-09-25 | 2023-10-31 | 苏州高视半导体技术有限公司 | Wafer detection system, detection method, electronic device and storage medium |
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| CN116973380A (en) * | 2023-09-25 | 2023-10-31 | 苏州高视半导体技术有限公司 | Wafer detection system, detection method, electronic device and storage medium |
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