CN114737255B - Residue removal method for nitriding process of diffusion furnace - Google Patents
Residue removal method for nitriding process of diffusion furnace Download PDFInfo
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- CN114737255B CN114737255B CN202110019365.9A CN202110019365A CN114737255B CN 114737255 B CN114737255 B CN 114737255B CN 202110019365 A CN202110019365 A CN 202110019365A CN 114737255 B CN114737255 B CN 114737255B
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
- C30B31/16—Feed and outlet means for the gases; Modifying the flow of the gases
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention relates to a residue removing method of a nitriding process of a diffusion furnace, which comprises the following steps of: and (3) heating: raising the temperature in the diffusion furnace to a first preset temperature, wherein the first preset temperature is higher than the highest temperature in the nitriding treatment process; and (3) introducing gas: introducing a purge gas into the diffusion furnace within a first preset time; introducing purge gas into the diffusion furnace within a second preset time; and (3) a cooling process: and reducing the temperature in the diffusion furnace to a second preset temperature, wherein the second preset temperature is lower than the highest temperature in the nitriding treatment process. The invention effectively removes powder or granular residues attached to the quartz surface, eliminates the phenomenon that the residues fall on the wafer surface, and prolongs the PM period.
Description
Technical Field
The invention relates to the technical field of semiconductor processes, in particular to a residue removal method for a nitriding process of a diffusion furnace.
Background
In the semiconductor manufacturing process, the wafer is required to be placed in a diffusion furnace to carry out nitriding treatment, namely, a nitride film is deposited on the surface of the wafer, residual gases are generated in the deposition process and adhere to the quartz surface in the diffusion furnace to form powder or particles, the powder or particles adhered to the quartz surface gradually thicken and the adhesion force is reduced along with the repeated process and time accumulation, part of the residues can slide off from the quartz surface, the sliding residue part can fall on the surface of the wafer, the wafer is polluted, and the product yield is seriously affected. As shown in fig. 1, a diffusion furnace 1 is provided with quartz 2 and a wafer carrier 3, during processing, a wafer 4 is placed on the wafer carrier 3, residues 5 are attached to the quartz surface, and the residues 5 are deposited more and more, when the thickness reaches a certain degree, the adhesive force of part of the residues 5 is zero, so that the residues can fall on the wafer 4, and the wafer 4 is polluted.
In the prior art, a diffusion furnace for a polysilicon forming process is internally provided with residue removing equipment, one deposition is completed and then one removal is carried out, and before the residues fall off, the residues deposited during each batch processing are removed, so that the phenomenon of falling off of the residues is reduced. In the diffusion furnace nitridation process, however, there is no associated equipment for removing deposited residues during each batch process.
Disclosure of Invention
In order to solve the technical problems, the main object of the present invention is to provide a method for removing residues in a nitriding process of a diffusion furnace, wherein in each batch processing process, residues on the quartz surface are removed by adopting an in-situ removing method through gas flow and temperature control, so that the product yield of semiconductor devices is improved, the preventive maintenance process of semiconductor manufacturing equipment is omitted, and the product production efficiency is improved.
In order to achieve the above object, the present invention provides the following technical solutions.
According to an aspect of the present invention, there is provided a residue removal method of a nitriding process of a diffusion furnace, in which, during a period in which a diffusion furnace continuously performs nitriding treatment on different semiconductor devices, the following steps are performed during a period in which no semiconductor device is present in the diffusion furnace:
and (3) heating: raising the temperature in the diffusion furnace to a first preset temperature which is higher than the highest temperature in the nitriding treatment process;
and (3) introducing gas: introducing a purge gas into the diffusion furnace within a first preset time; introducing purge gas into the diffusion furnace within a second preset time;
and (3) a cooling process: and reducing the temperature in the diffusion furnace to a second preset temperature, wherein the second preset temperature is lower than the highest temperature in the nitriding treatment process.
Compared with the prior art, the invention achieves the following technical effects:
(1) After each batch treatment process is finished, the temperature in the diffusion furnace is increased, gas is introduced, residues attached to the quartz surface are removed, the residues are prevented from falling on the surface of the semiconductor device, and the product yield of the semiconductor device is improved;
(2) The residue removing method is carried out in the whole process without stopping the nitriding treatment process of the nitriding furnace, so that each batch of treatment is omitted, the Preventive Maintenance (PM) process of semiconductor manufacturing equipment is finished, the PM period is prolonged, and the production efficiency of products is improved;
(3) The invention does not need to replace equipment parts and reduces the residue removal cost.
Drawings
Various other advantages and benefits will become apparent to those of ordinary skill in the art upon reading the following detailed description of the preferred embodiments. The drawings are only for purposes of illustrating the preferred embodiments and are not to be construed as limiting the invention. Also, like reference numerals are used to designate like parts throughout the figures. In the drawings:
figure 1 shows a schematic view of the adhesion of the residues inside a prior art diffusion furnace to the quartz surface.
FIG. 2 is a schematic diagram illustrating the various stages involved in each batch process in accordance with an embodiment of the present invention.
FIG. 3 is a schematic diagram of a cleaning process of a residue cleaning method according to an embodiment of the present invention.
FIG. 4 is a flow chart of a method for cleaning residue according to an embodiment of the invention.
[ symbolic description ]
[ Prior Art ]
1-a diffusion furnace; 2-quartz; 3-wafer carrier; 4-wafer; 5-residue.
Detailed Description
Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings. It should be understood that the description is only illustrative and is not intended to limit the scope of the invention. In addition, in the following description, descriptions of well-known structures and techniques are omitted so as not to unnecessarily obscure the present invention.
Various structural schematic diagrams according to embodiments of the present invention are shown in the accompanying drawings. The figures are not drawn to scale, wherein certain details are exaggerated for clarity of presentation and may have been omitted. The shapes of the various regions, layers and relative sizes, positional relationships between them shown in the drawings are merely exemplary, may in practice deviate due to manufacturing tolerances or technical limitations, and one skilled in the art may additionally design regions/layers having different shapes, sizes, relative positions as actually required.
In the context of the present invention, when a layer/element is referred to as being "on" another layer/element, it can be directly on the other layer/element or intervening layers/elements may be present therebetween. In addition, if one layer/element is located "on" another layer/element in one orientation, that layer/element may be located "under" the other layer/element when the orientation is turned.
In the present invention, nitriding treatment, i.e., nitride deposition, is performed in the diffusion furnace, and no semiconductor device is carried out of the diffusion furnace for a period of time before the previous batch of semiconductor devices (e.g., wafers) are carried into the diffusion furnace after nitriding is completed, and residues on the quartz surface are removed by introducing fluorine gas pre-diluted in an inert gas and raising the temperature in the furnace, because in the diffusion furnace, after the temperature is higher than the height of the nitriding process, the adhesion of the residues on the quartz surface is reduced, thereby inducing the residues to drop, thereby achieving the purpose of removing the residues.
Specifically, the invention provides a residue removing method of a nitriding process of a diffusion furnace, wherein in the process of continuously nitriding different semiconductor devices by the diffusion furnace, the following steps are carried out in a period of time without the semiconductor devices in the diffusion furnace as shown in fig. 4:
and (3) heating: the temperature in the diffusion furnace is raised to and maintained at a first preset temperature, and the first preset temperature is higher than the highest temperature of the nitriding process. The method of the present invention for removing the residue by using fluorine gas and high temperature must be performed without semiconductor devices in the diffusion furnace.
First, description will be made of different stages involved in the process of nitriding a semiconductor device in a diffusion furnace, as shown in fig. 2, in which a semiconductor device is taken as a wafer, and a batch process is taken as an example, in fig. 2, time is indicated in a lateral direction, (1) to (6) indicate different stages of the batch process of wafers in different time periods, and broken lines indicate temperature changes in the diffusion furnace in different stages, and the nitriding process of each batch of wafers includes the following six stages:
stage (1), loading wafer;
stage (2), carrying the wafer into the diffusion furnace by the wafer carrying device;
stage (3) of nitriding the wafer, as can be seen from fig. 2, the temperature of stage (3) is higher than the temperatures of stages (1) and (2);
stage (4) and wafer carrier carry wafers out of the diffusion furnace, and as can be seen from fig. 2, the temperature of stage (4) is approximately the same as the temperatures of stages (1) and (2);
stage (5), cooling the wafer;
stage (6), unloading the wafer.
For each of the wafers, the above-mentioned stages (1) to (6) are performed, and as shown in fig. 3, fig. 3 shows the process of two adjacent wafers, in the process of batch processing the wafers, the next wafer is subjected to nitriding treatment after nitriding the one wafer, the first wafer is the semiconductor device for which nitriding treatment has been completed before, and the second wafer is the semiconductor device for which nitriding treatment has been completed after, and as can be seen from fig. 3, in the period of stages (5), (6) of the first wafer and stage (1) of the second wafer, that is, in the period of carrying out the diffusion furnace from the semiconductor device for which nitriding treatment has been completed before to the semiconductor device for which nitriding treatment has been completed after into the diffusion furnace, the diffusion furnace is wafer-free, and therefore, the residue can be selectively removed in this period.
As a specific embodiment, the first preset temperature is greater than or equal to 850 ℃, so that the effect of inducing the residue on the quartz surface to drop is optimal.
And (3) introducing gas: introducing a purge gas into the diffusion furnace within a first preset time, introducing a purge gas into the diffusion furnace within a second preset time, and reacting the purge gas with residues on the quartz surface to generate volatile reaction products, wherein the purge gas can blow the volatile reaction products out of the diffusion furnace. The purge gas is preferably pre-diluted fluorine in an inert gas, which reduces the risk of fluorine while maximizing the amount of fluorine that can be transported, and in some embodiments, the pre-diluted fluorine has a fluorine concentration of no greater than 20%, and in some embodiments, a fluorine concentration of 20%. In addition, the inert gas is selected from nitrogen N 2 Argon Ar, helium He and mixtures thereof, preferably, the inert gas is selected from the group consisting of high purity nitrogen PN 2 High purity nitrogen PN 2 The purity of (3) is 99.999% or more. In addition, the flow rate of the fluorine gas pre-diluted in the inert gas is controlled to be between 500sccm and 2000 sccm.
And reducing the temperature in the diffusion furnace to a second preset temperature, wherein the second preset temperature is lower than the highest temperature in the nitriding treatment process. Because the first predetermined temperature is higher than the temperature at any of the stages (1) to (6) of the nitriding process, the temperature in the diffusion furnace needs to be reduced to accommodate the temperature requirement of the nitriding process, for example, to reduce the temperature in the diffusion furnace to the temperature of the stage (2) of the nitriding process.
It is worth noting that the residue removing method is carried out under the running state of the diffusion furnace, the diffusion furnace does not need to be stopped, a batch processing is omitted, a Preventive Maintenance (PM) process of semiconductor manufacturing equipment is omitted, the PM period is prolonged, and the production efficiency of products is improved. In addition, as shown in fig. 3, in the residue removal process of the present invention, in a period from when the semiconductor device having completed nitriding treatment before is transported out of the diffusion furnace to when the semiconductor device to be nitrided after being carried into the diffusion furnace, a purge gas introduction process and a purge gas introduction process are alternately performed, that is, after the temperature in the diffusion furnace is raised to a first preset temperature, purge gas (which reacts with the residues falling from the quartz surface to generate volatile reaction products) is introduced into the diffusion furnace for a period of time, then purge gas (which purges the volatile reaction products) is introduced into the diffusion furnace for a period of time, and then purge gas is introduced into the diffusion furnace for a period of time, thereby repeating the process. In some embodiments, the alternating times of the purge gas passing and purge gas passing are 1-10 times, and the purge gas passing and purge gas passing are counted as one alternating period, and the time of the alternating period is 10 seconds to 60 seconds.
In the residue removing method, before and after nitriding treatment, the quartz surface in the diffusion furnace is removed in situ in the period of carrying the wafer, the temperature in the diffusion furnace is higher than the highest temperature in the nitriding treatment process by increasing the temperature and introducing pre-diluted fluorine gas, the high temperature can reduce the adhesion force of the residues on the quartz surface, induce the residues to fall off from the quartz surface and react with the removing gas, so that the residues of powder or particles attached to the quartz surface are effectively removed, the phenomenon that the residues fall on the wafer surface is eliminated, and the PM period is prolonged. In addition, the clearing method does not need to stop the nitriding treatment process of the nitriding furnace, improves the production efficiency, does not need to replace parts of equipment, and saves the equipment cost.
The semiconductor device of the present invention can be used in DRAM, flash and Logic, and the transistor coupled in series with the semiconductor device can be formed by the known manufacturing process to complete the manufacturing of DRAM.
Further, the DRAM, flash, and Logic having the semiconductor device of the present invention may be used in various chips.
Still further, the chip having the semiconductor device described above may be used in various electronic devices, and in particular, the electronic devices may be smart phones, computers, tablet computers, wearable smart devices, artificial smart devices, mobile power supplies, and the like.
In the above description, technical details of patterning, etching, and the like of each layer are not described in detail. Those skilled in the art will appreciate that layers, regions, etc. of the desired shape may be formed by a variety of techniques. In addition, to form the same structure, those skilled in the art can also devise methods that are not exactly the same as those described above. In addition, although the embodiments are described above separately, this does not mean that the measures in the embodiments cannot be used advantageously in combination.
The embodiments of the present invention are described above. However, these examples are for illustrative purposes only and are not intended to limit the scope of the present invention. The scope of the invention is defined by the appended claims and equivalents thereof. Various alternatives and modifications can be made by those skilled in the art without departing from the scope of the invention, and such alternatives and modifications are intended to fall within the scope of the invention.
Claims (3)
1. A residue removal method of a nitriding process of a diffusion furnace, characterized in that during a period in which the diffusion furnace continuously performs nitriding treatment on different semiconductor devices, the following steps are performed in a period in which no semiconductor device is present in the diffusion furnace:
and (3) heating: raising the temperature in the diffusion furnace to a first preset temperature, wherein the first preset temperature is higher than the highest temperature in the nitriding treatment process; the first preset temperature is greater than or equal to 850 ℃;
and (3) introducing gas: introducing a purge gas into the diffusion furnace within a first preset time; introducing purge gas into the diffusion furnace within a second preset time; the scavenging gas is fluorine gas pre-diluted in inert gas; in the process of introducing the gas, the process of introducing the purge gas and the process of introducing the purge gas are alternately performed, and each alternate process is an alternate period; the time of the one alternating period is 10 seconds to 60 seconds;
and (3) a cooling process: reducing the temperature in the diffusion furnace to a second preset temperature, wherein the second preset temperature is lower than the highest temperature in the nitriding treatment process;
the semiconductor devices are nitrided in a batch processing mode, the semiconductor devices which are subjected to nitriding treatment in advance are in a first batch, the semiconductor devices which are subjected to nitriding treatment in later are in a second batch, and the time period is the time interval from the first batch to the second batch when the semiconductor devices are transported out of the diffusion furnace to the second batch when the semiconductor devices are transported into the diffusion furnace;
the concentration of fluorine gas pre-diluted in inert gas is not more than 20%;
the flow rate of the fluorine gas pre-diluted in the inert gas is controlled to be between 500sccm and 2000 sccm.
2. The method of claim 1, wherein the inert gas is selected from any one of nitrogen, argon, helium, or mixtures thereof.
3. The residue removal method according to claim 1, wherein the number of alternations of the purge gas introduction process and the purge gas introduction process is 1 to 10.
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| JPH0684817A (en) * | 1992-09-01 | 1994-03-25 | Matsushita Electron Corp | Apparatus and method for cleaning |
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