CN114725771A - Off-axis semiconductor laser - Google Patents

Off-axis semiconductor laser Download PDF

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Publication number
CN114725771A
CN114725771A CN202210282603.XA CN202210282603A CN114725771A CN 114725771 A CN114725771 A CN 114725771A CN 202210282603 A CN202210282603 A CN 202210282603A CN 114725771 A CN114725771 A CN 114725771A
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CN
China
Prior art keywords
semiconductor laser
end component
gain chip
cavity
lens
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Pending
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CN202210282603.XA
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Chinese (zh)
Inventor
张建伟
张卓
周寅利
宁永强
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Changchun Institute of Optics Fine Mechanics and Physics of CAS
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Changchun Institute of Optics Fine Mechanics and Physics of CAS
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Priority to CN202210282603.XA priority Critical patent/CN114725771A/en
Publication of CN114725771A publication Critical patent/CN114725771A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02407—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling
    • H01S5/02423—Liquid cooling, e.g. a liquid cools a mount of the laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02253—Out-coupling of light using lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/125—Distributed Bragg reflector [DBR] lasers

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

The invention relates to the technical field of semiconductor lasers, in particular to an off-axis semiconductor laser, which comprises a heat radiation water-cooling base, a water-cooling radiator, a copper heat sink, a gain chip, a pumping system, a reflecting end component, an output end component, a lens component and an outer cavity, wherein the heat radiation water-cooling base is provided with a heat radiation heat radiator; the external cavity is formed by a reflection end component, a gain chip and an output end component; the pumping system pumps the gain chip to generate gain, and the light beam after generating the gain is reflected by the reflection assembly, converged to the gain chip, reflected by a distributed Bragg reflector in the gain chip, converged by the lens assembly and reaches the output end assembly to realize in-cavity oscillation; according to the off-axis semiconductor laser, the mode of light beam transmission is optimized through the design of the lens component in the outer cavity, and meanwhile, the design of the output end component of the retro-reflector structure is adopted, so that the cavity length of the outer cavity of the semiconductor laser can be increased, and off-axis work is realized.

Description

Off-axis semiconductor laser
Technical Field
The invention relates to the technical field of semiconductor lasers, in particular to an off-axis semiconductor laser.
Background
The semiconductor laser has the advantages of high photoelectric conversion efficiency, small volume, light weight, low cost and the like, and becomes a research hotspot in the technical field of photoelectronics. The external cavity oscillation characteristic of the optical pumping vertical cavity surface emitting semiconductor laser is that a nonlinear optical crystal is arranged in the external cavity of the optical pumping vertical cavity surface emitting semiconductor laser, so that the conversion of output wavelength can be realized, and the wavelength coverage range of the semiconductor laser is greatly expanded. The visible light wave band is output through frequency doubling, and the method has very wide application in laser medical treatment, gene sequencing, atmospheric remote sensing and other aspects.
Along with the popularization of intelligent equipment, carrying a charger to charge mobile equipment causes great inconvenience. Wireless charging technology has become a research hotspot. The existing electromagnetic coupling wireless charging technology still can be charged close to a charging device. The electromagnetic radiation charging technology can realize remote charging, but radiation is harmful to human bodies and cannot be applied to daily life. The semiconductor laser has a flexible external cavity structure, long-cavity long laser output can be realized through cavity design, long-distance space energy transfer is realized by matching with a corresponding receiving device, and the semiconductor laser has high application potential. The optical pumping vertical external cavity laser reported at present only has the maximum cavity length of about 50cm, and can not realize off-axis work.
Disclosure of Invention
In order to solve the problems, the invention provides an off-axis semiconductor laser, which optimizes the light beam transmission mode through the design of an inner lens component of an outer cavity, and simultaneously adopts the design of an output end component of a retro-reflector structure, so that the cavity length of the semiconductor laser can be increased, and the off-axis work is realized.
The invention provides an off-axis semiconductor laser, which comprises a heat radiation water-cooling base, a water-cooling radiator, a copper heat sink, a gain chip, a pumping system, a reflecting end component, an output end component, a lens component and an outer cavity, wherein the heat radiation water-cooling base is arranged on the heat radiation water-cooling radiator;
the external cavity is formed by a reflecting end component, a gain chip and an output end component; the lens assembly is arranged in the outer cavity;
the gain chip is connected to the copper heat sink, the copper heat sink is installed on the heat dissipation water-cooling base, and the heat dissipation water-cooling base is connected with the water-cooling radiator; the water-cooling radiator is used for controlling the working temperature of the gain chip;
the pumping system pumps the gain chip to generate gain, the light beam after generating the gain is reflected by the reflecting end component and converged to the gain chip, and then is reflected by the distributed Bragg reflector in the gain chip, and the reflected light beam is converged by the lens component and reaches the output end component, so that the light beam is oscillated in the cavity of the outer cavity and is output by the output end component.
Preferably, the outer cavity is single-V-shaped, double-V-shaped or W-shaped.
Preferably, the gain chip adopts an InGaAs/GaAs material system, an AlGaAs/GaAs material system, an InGaAsP/GaAs material system or a GaN/AlGaN material system.
Preferably, the reflective end assembly comprises a first plano-concave mirror.
Preferably, the reflective end assembly further comprises a first convex lens or a first concave lens.
Preferably, the reflective end assembly includes a first planar mirror and a second convex lens.
Preferably, the gain chip comprises an etching barrier layer, a pumping light absorption layer, a distributed Bragg reflector and a quantum well.
Preferably, the output end assembly adopts a retro-reflector structure.
Preferably, the lens assembly comprises a third convex lens.
Preferably, the lens assembly further comprises a fourth convex lens or a fourth concave lens.
According to the off-axis semiconductor laser, stable oscillation of an ultra-long cavity is realized through the combination of the reflecting end component and the output end component, light beam transmission in the external cavity is optimized, the length of the laser external cavity can be greatly expanded, and the semiconductor laser can stably work within 5 m; meanwhile, the output end assembly design of the retro-reflector structure is adopted, the periodic gain of the laser in the external cavity can be effectively realized with the gain chip and the output end assembly through the lens assembly in the external cavity, the cavity length of the semiconductor laser can be increased, and off-axis work is realized.
Drawings
Fig. 1 is a schematic structural diagram of an off-axis semiconductor laser according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of a gain chip in an off-axis semiconductor laser according to an embodiment of the present invention.
Reference numerals:
the device comprises a heat dissipation water-cooling base 101, a copper heat sink 102, a gain chip 103, a reflecting end component 104, a lens component 105, an output end component 106, a pumping system 107, an off-axis working region 108, an erosion barrier layer 201, a pumping light absorption layer 202, a distributed Bragg reflector 203 and a quantum well 204.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention will be described in further detail below with reference to the accompanying drawings and specific embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and do not limit the invention.
As shown in fig. 1, which is a schematic structural diagram of an off-axis semiconductor laser according to an embodiment of the present invention, it can be seen that the off-axis semiconductor laser includes a heat-dissipating water-cooled base 101, a water-cooled heat sink (not shown), a copper heat sink 102, a gain chip 103, a pumping system 107, a reflective end component 104, an output end component 106, a lens component 105, and an external cavity; the external cavity (not shown) is formed by a reflective end module 104, a gain chip 103 and an output end module 106; the lens assembly 105 is disposed within the outer cavity.
In a specific embodiment, as can be seen from fig. 1, the gain chip 103 is connected to the copper heat sink 102, and the gain chip 103 may be connected to the copper heat sink 102 by In soldering or other soldering methods; the copper heat sink 102 is mounted on the heat-dissipation water-cooling base 101, and the heat-dissipation water-cooling base 101 is connected with the water-cooling radiator (not shown in the figure); the heat dissipation water-cooling base 101 is connected with the water-cooling radiator and used for taking away waste heat generated when the off-axis semiconductor laser works and controlling the working temperature of the gain chip 103; the pumping system 107 pumps the gain chip 103 to generate gain, the light beam after generating gain is reflected by the reflection end component 104, and is converged to the gain chip 103, and is reflected by the distributed bragg reflector in the gain chip 103, at this time, the light beam in the outer cavity has a certain divergence angle, the divergence angle of the reflected light beam is reduced by the lens component 105, specifically, the reflected light beam is converged in the outer cavity by the lens component 105, that is, the divergence angle of the light beam is reduced, the light beam with the reduced divergence angle reaches the output end component 106, the light beam oscillates in the outer cavity, and is output by the output end component 106.
In a specific embodiment, the reflective end assembly 104 may only include the first plano-concave mirror, or may adopt various combinations of the first plano-concave mirror + the first convex lens, the first plano-concave mirror + the first concave lens, and the first plane mirror + the second convex lens, which mainly function to achieve a high reflectivity, so that the reflectivity is higher than 99.9%, and simultaneously converge the light beam. The reflecting mirror in the reflecting end assembly 104 is plated with a high reflection film, specifically, a first plano-concave reflecting mirror is plated with a high reflection film or a first plane reflecting mirror is plated with a reflection film, specifically, a high reflection film of an output waveband is adopted; the lens in the reflective end module 104 is plated with an antireflection film, which may be specifically a first convex lens, a second convex lens, or a first concave lens, and specifically adopts an antireflection film of an output waveband. The output bands refer to output bands respectively corresponding to different material systems specifically adopted by the gain chip 103, that is, when the gain chip 103 adopts different material systems, the output bands are different.
The output end component 106 may adopt a retro-reflector structure, specifically may directly adopt a 45 ° reflector, that is, a right-angle reflector, or may adopt a combination of a fifth convex lens + a second plane reflector, etc., and its main function is to reflect the light beam in the outer cavity back to the gain chip 103, so as to provide a high reflectivity for stable oscillation of the light beam in the cavity, but its reflectivity is lower than that of the reflection end component 104, and the reflectivity may be in the range of 95% to 98.5%, which is about 97.5%, and is specifically related to the laser output threshold and the peak output power; the output terminal assembly 106 is further configured to cooperate with the lens assembly 105 to reduce the divergence angle of the light beam reflected back to the gain chip 103, thereby reducing the loss of the light beam in the outer cavity and achieving stable oscillation in the outer cavity. The laser oscillation in the outer cavity obtains periodic gain through the gain chip 103, and after reaching the laser threshold, the laser is output from the output end component 106 with lower reflectivity. Specifically, the reflector in the output end assembly 106 may also be coated with a high reflection film in the output wavelength band, and the convex lens in the output end assembly 106 may also be coated with an antireflection film in the output wavelength band.
The lens assembly 105 in the outer cavity may only include a third convex lens, or may adopt various combination modes such as a third convex lens + a fourth convex lens, a third convex lens + a fourth concave lens, and the like, and the lens assembly mainly functions to optimize light beam transmission in the outer cavity, reduce a divergence angle of the light beam, and reduce transmission loss of the light beam in the outer cavity. And the fourth concave lens, the third convex lens and the fourth convex lens are coated with antireflection films in output wave bands.
The pumping system 107 may be electrically or optically pumped. The optical pumping specifically adopts a 808nm optical fiber coupled diode laser, uses the lens assembly 105 in the outer cavity for focusing, and forms a certain inclination angle with the gain chip 103 for pumping, in a preferred embodiment, the pumping inclination angle is in the range of 30-60 degrees, and the outer cavity can be more conveniently formed by obliquely pumping through the pumping light source, namely, the inclination angle is set, so that the outer cavity cannot be blocked, and the laser in the outer cavity cannot be blocked by the pumping system 107; specifically, light sources of other wavelength bands may be used for pumping.
In a preferred embodiment, the external cavity formed by the reflective end module 104, the gain chip 103, the lens module 105 and the output end module 106 can be a single V-shape, a double V-shape or a W-shape. Taking a single-V cavity as an example, a V cavity is formed by a short arm, a long arm and a gain chip 103, wherein the short arm is formed by a reflecting end component 104, mainly serves as a reflecting structure, can be a plane-concave reflecting mirror or other structures, and does not need to be too long so as to avoid increasing the transmission loss of light beams in an external cavity; the long arm is formed by the lens assembly 105 and the output end assembly 106 in the external cavity, the lens assembly 105 in the external cavity can reduce the divergence angle of the light beam, and the radius of the light beam at the output end assembly 105 can still be enlarged, so that the output end can work off the optical axis.
In the specific embodiment, by forming a single V-shaped, double V-shaped or W-shaped external cavity, on one hand, when the output end assembly 105 performs off-axis operation, the beam deflection has less influence on the beam transmission in the external cavity due to the larger size of the reflecting mirror of the reflecting end assembly 104; in the case of a straight cavity, the gain chip 103 is only 3 x 3mm in size and cannot support a large off-axis range. On the other hand, the included angle between the two arms of the outer cavity of the single V-shaped cavity can be adjusted between 10 degrees and 60 degrees, and if different application requirements exist, the structure of the lens group can be adjusted to carry out flexible design.
In a specific embodiment, the single V cavity may have a short arm formed by the reflection end assembly 104, and a long arm formed by the lens assembly 105 and the output end assembly 106 in the outer cavity, as shown in fig. 1, an included angle between two arms of the single V cavity is θ, and the included angle θ may be adjusted within a range of 60 °, so as to be suitable for different application requirements, and make the cavity design of the outer cavity more flexible.
In one embodiment, as shown in FIG. 1, the reflective end module 104 is a first plano-concave mirror coated with an output band high-reflectivity film, and the first plano-concave mirror is placed at a distance from the gain chip 103L1Forming a short arm; the output end assembly 106 adopts a 45-degree reflector, and the reflector is plated with an output waveband high-reflection film to reflect the transmitted light back; the lens assembly 105 in the outer cavity adopts a third convex lens, an output waveband antireflection film is plated on the third convex lens, and the third convex lens is placed on the distance gain chip 103L2At least one of (1) and (b); the pumping system 107 adopts optical pumping, gain is generated by the region of the optical pumping gain chip 103, and the gain is converged by the third convex lens, so that the transmission loss of the light beam in the outer cavity is reduced.
The third convex lens and the 45-degree reflector form a long arm, and the distance between the third convex lens and the 45-degree reflector is L3. Is long and longThe arm, the gain chip 103 and the first plano-concave mirror form a V-shaped folded cavity. The gain chip 103 is pumped by the optical pump to generate gain, after the gain chip passes through the third convex lens, the divergence angle of the light beam is reduced, after the light beam reaches the 45-degree reflector, the light beam is reflected, is converged to the light emitting area of the gain chip through the third convex lens, is reflected to the first plano-concave reflector through the distributed Bragg reflector 203 at the bottom layer of the gain chip 103, and is focused to the light emitting area of the gain chip 103 through the first plano-concave reflector to form a V-shaped laser external cavity. The third convex lens with high transmittance in the outer cavity is increased to form a stable V-shaped cavity, the loss in the light beam transmission process is low, and L is3Can be elongated to about 5m, and realizes the output of long-cavity long laser.
As shown in fig. 2, which is a schematic structural diagram of a gain chip in an off-axis semiconductor laser according to an embodiment of the present invention, as can be seen from the figure, the gain chip 103 sequentially includes an etching barrier layer 201, a pump light absorption layer 202, a distributed bragg reflector 203, and a quantum well 204; in other embodiments, the gain chip 103 may have other structures; in a preferred embodiment, the gain chip 103 may adopt an InGaAs/GaAs material system, an AlGaAs/GaAs material system, an InGaAsP/GaAs material system or a GaN/AlGaN material system, and may be selected according to different laser output wavelength bands.
The off-axis operation of the off-axis semiconductor laser provided by the present invention is achieved primarily by the characteristics of the output end assembly 106 retro-reflector.
As shown in fig. 1, by shortening the distance L between the lens assembly 105 and the gain chip 1032The light emitted from the light emitting region of the gain chip 103 has a divergence angle after passing through the lens assembly 105, and when reaching the reflective end assembly 104, a field of view, i.e., the off-axis active region 108, is formed. Because the retro-reflector structure of the output terminal assembly 106 can reflect the incident light back to the original path, in the off-axis working region 108, the output terminal assembly 106 can be off-axis, the external cavity of the off-axis semiconductor laser can be stored for stable output, and long-cavity long-off-axis working is realized.
According to the off-axis semiconductor laser, stable oscillation of an ultra-long cavity is realized through the combination of the reflecting end component and the output end component, light beam transmission in the external cavity is optimized, the length of the laser cavity can be greatly expanded, and the semiconductor laser can stably work within 5 m; meanwhile, the output end assembly design of the retro-reflector structure is adopted, the periodic gain of the laser in the external cavity can be effectively realized with the gain chip and the output end assembly through the lens assembly in the external cavity, the cavity length of the semiconductor laser can be increased, and off-axis work is realized.
While embodiments of the present invention have been shown and described above, it should be understood that the above embodiments are exemplary and should not be taken as limiting the invention. Variations, modifications, substitutions and alterations of the above-described embodiments may be made by those of ordinary skill in the art without departing from the scope of the present invention.
The above embodiments of the present invention should not be construed as limiting the scope of the present invention. Any other corresponding changes and modifications made according to the technical idea of the present invention should be included in the protection scope of the claims of the present invention.

Claims (10)

1. An off-axis semiconductor laser is characterized by comprising a heat radiation water-cooling base, a water-cooling radiator, a copper heat sink, a gain chip, a pumping system, a reflecting end component, an output end component, a lens component and an external cavity;
the external cavity is formed by a reflecting end component, a gain chip and an output end component; the lens assembly is arranged in the outer cavity;
the gain chip is connected to the copper heat sink, the copper heat sink is installed on the heat dissipation water-cooling base, and the heat dissipation water-cooling base is connected with the water-cooling radiator; the water-cooled radiator is used for controlling the working temperature of the gain chip;
the pumping system pumps the gain chip to generate gain, the light beam after generating the gain is reflected by the reflecting end component and converged to the gain chip, and then is reflected by the distributed Bragg reflector in the gain chip, and the reflected light beam is converged by the lens component and reaches the output end component, so that the light beam is oscillated in the cavity of the outer cavity and is output by the output end component.
2. An off-axis semiconductor laser as claimed in claim 1 wherein the external cavity is single V-shaped, double V-shaped, or W-shaped.
3. An off-axis semiconductor laser as claimed in claim 1 wherein said gain chip is of InGaAs/GaAs material system, AlGaAs/GaAs material system, InGaAsP/GaAs material system or GaN/AlGaN material system.
4. An off-axis semiconductor laser as claimed in claim 1 wherein the reflective end component comprises a first plano-concave mirror.
5. An off-axis semiconductor laser as claimed in claim 4 wherein the reflective end component further comprises a first convex lens or a first concave lens.
6. An off-axis semiconductor laser as claimed in claim 1 wherein the reflective end component comprises a first planar mirror and a second convex lens.
7. An off-axis semiconductor laser as claimed in claim 1 wherein the gain chip comprises an etch stop layer, a pump light absorption layer, a distributed bragg reflector, and a quantum well.
8. An off-axis semiconductor laser as claimed in claim 1 wherein said output terminal assembly employs a retro-reflector structure.
9. An off-axis semiconductor laser as claimed in claim 1 wherein the lens assembly comprises a third convex lens.
10. An off-axis semiconductor laser as claimed in claim 9 wherein the lens assembly further comprises a fourth convex lens or a fourth concave lens.
CN202210282603.XA 2022-03-22 2022-03-22 Off-axis semiconductor laser Pending CN114725771A (en)

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CN202210282603.XA CN114725771A (en) 2022-03-22 2022-03-22 Off-axis semiconductor laser

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Application Number Priority Date Filing Date Title
CN202210282603.XA CN114725771A (en) 2022-03-22 2022-03-22 Off-axis semiconductor laser

Publications (1)

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CN114725771A true CN114725771A (en) 2022-07-08

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