CN114725641A - Millimeter wave high-power amplifier built based on longitudinal distributed power synthesis in waveguide - Google Patents
Millimeter wave high-power amplifier built based on longitudinal distributed power synthesis in waveguide Download PDFInfo
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- 230000015572 biosynthetic process Effects 0.000 title claims abstract description 118
- 238000003786 synthesis reaction Methods 0.000 title claims abstract description 118
- 239000000523 sample Substances 0.000 claims abstract description 53
- 230000008878 coupling Effects 0.000 claims abstract description 51
- 238000010168 coupling process Methods 0.000 claims abstract description 51
- 238000005859 coupling reaction Methods 0.000 claims abstract description 51
- 230000005540 biological transmission Effects 0.000 claims abstract description 27
- 230000003321 amplification Effects 0.000 claims abstract description 20
- 238000003199 nucleic acid amplification method Methods 0.000 claims abstract description 20
- 238000009826 distribution Methods 0.000 claims abstract description 14
- 238000004891 communication Methods 0.000 abstract description 5
- 230000010354 integration Effects 0.000 abstract description 5
- 239000007787 solid Substances 0.000 abstract description 5
- 238000005516 engineering process Methods 0.000 description 26
- 238000000034 method Methods 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 6
- 230000002194 synthesizing effect Effects 0.000 description 6
- 238000009434 installation Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000001308 synthesis method Methods 0.000 description 4
- 230000007704 transition Effects 0.000 description 4
- 238000013461 design Methods 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 238000010276 construction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005672 electromagnetic field Effects 0.000 description 2
- 238000003780 insertion Methods 0.000 description 2
- 230000037431 insertion Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 238000005457 optimization Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000000536 complexating effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000004883 computer application Methods 0.000 description 1
- 230000007123 defense Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
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Abstract
The invention relates to the technical field of communication, in particular to a millimeter wave high-power amplifier constructed based on longitudinal distributed power synthesis in a waveguide, which comprises the following components: the distribution unit distributes the signal input by the first waveguide port into a plurality of paths of signals to be output through the plurality of paths of first microstrip coupling probes along the waveguide transmission path; the amplifying unit is electrically connected with the distribution unit and amplifies the multi-channel signals; and the synthesis unit is electrically connected with the amplification unit, synthesizes the multi-path amplified signals through the multi-path second microstrip coupling probe and outputs the signals from the second waveguide port along the waveguide transmission path. The millimeter wave high-power amplifier can efficiently synthesize and obtain high-power millimeter wave output through the frequency band height, is simple to install and easy to radiate heat, can remarkably improve the synthesis efficiency and the producibility of the power synthesis type amplifier, and has the characteristics of miniaturization, high integration and all solid state.
Description
Technical Field
The invention relates to the technical field of communication, in particular to a millimeter wave high-power amplifier constructed based on longitudinal distributed power synthesis in a waveguide.
Background
In the existing power synthesis method, circuit-level synthesis is successful in low-frequency application but low efficiency is achieved when high-frequency millimeter waves enter, the free space/quasi-optical synthesis technology system for space power synthesis is complex, difficult to manufacture and poor in working stability and reliability, the space of the power synthesis technology in a waveguide is limited, heat dissipation is difficult, the number of synthesized devices is limited, and operation is extremely difficult to achieve.
Disclosure of Invention
The technical problem to be solved by the invention is as follows: the power synthesis method aims to solve the problems that the power synthesis technology in the prior art is low in efficiency and difficult to realize in a high-frequency millimeter wave band. The invention provides a millimeter wave high-power amplifier built based on longitudinal distributed power synthesis in a waveguide, which replaces the traditional planar transmission line as a main transmission line of radio frequency signals by a waveguide structure of the longitudinal distributed power synthesis, converts energy to a planar circuit through a transition structure at the position needing to be amplified by an amplifying device, effectively shortens the length of the planar transmission line with high loss, improves the efficiency of power synthesis and the power capacity of the whole amplifier, and simplifies the installation structure and the production process of the power amplifier.
The technical scheme adopted by the invention for solving the technical problems is as follows: a millimeter wave high-power amplifier built based on longitudinal distributed power synthesis in waveguide comprises:
the distribution unit distributes the signal input by the first waveguide port into a plurality of paths of signals to be output through the plurality of paths of first microstrip coupling probes along the waveguide transmission path;
the amplifying unit is electrically connected with the distribution unit and amplifies the multi-channel signals;
and the synthesis unit is electrically connected with the amplification unit and synthesizes the multi-path amplified signals through the multi-path second microstrip coupling probe and outputs the signals from the second waveguide port along the waveguide transmission path.
Further, the allocation unit includes:
the waveguide structure comprises a first waveguide, a second waveguide and a third waveguide, wherein a first waveguide cavity is arranged in the first waveguide, the front end of the first waveguide is opened to form a first waveguide opening, the rear end of the first waveguide is closed, at least two through holes are formed in the side wall of the first waveguide, and the through holes penetrate through the side wall of the first waveguide and are communicated with the first waveguide cavity;
the first microstrip coupling probes correspond to the through holes one by one, and one end of each first microstrip coupling probe penetrates through the through holes and faces the first waveguide cavity.
Further, the amplifying unit includes:
the first amplification unit comprises at least two amplifiers, the amplifiers correspond to the first microstrip coupling probes one to one, and the other ends of the first microstrip coupling probes are connected with the input ends of the corresponding amplifiers.
Further, the synthesis unit includes:
the second waveguide is internally provided with a second waveguide cavity, the front end of the second waveguide is opened to form a second waveguide port, the rear end of the second waveguide is closed, the side wall of the second waveguide is provided with at least two through holes, and the through holes penetrate through the side wall of the second waveguide and are communicated with the second waveguide cavity;
the second microstrip coupling probes are in one-to-one correspondence with the through holes, one ends of the second microstrip coupling probes penetrate through the through holes and face the second waveguide cavity, and the other ends of the second microstrip coupling probes are connected with the output end of the amplifier.
Furthermore, the output ends of the first microstrip coupling probes are all 50 ohm impedance.
Furthermore, the amplifying unit further includes a second amplifying unit for amplifying the signal of the first amplifying unit, the second amplifying unit includes at least two amplifiers, input ends of the amplifiers of the second amplifying unit are correspondingly connected to output ends of the amplifiers of the first amplifying unit, and output ends of the amplifiers of the second amplifying unit are correspondingly connected to the second microstrip coupling probe.
Further, for convenience of connection, the front ends of the first waveguide and the second waveguide are provided with waveguide flanges.
Further, the through holes are arranged at intervals in sequence along the front-back direction.
Furthermore, in order to fix the first microstrip coupling probe, an insulating column is fixedly arranged on the side wall of the first waveguide, the insulating column corresponds to the first microstrip coupling probe one to one, and the first microstrip coupling probe abuts against the insulating column.
The millimeter wave high-power amplifier based on the waveguide internal longitudinal distributed power synthesis has the advantages that the traditional coaxial or planar transmission line is replaced by the low-loss waveguide structure transmission line to serve as the main transmission line of the radio-frequency signal, the energy is converted to the planar circuit through the waveguide-microstrip transition structure at the position needing to be amplified by the amplifying device, the length of the high-loss planar transmission line is effectively shortened, and the efficiency of power amplification synthesis is improved.
Drawings
The invention is further illustrated with reference to the following figures and examples.
FIG. 1 is a topology of a power combining amplifier;
FIG. 2 is a diagram of the vertical distributed power splitting/combining network within a waveguide of the present invention;
fig. 3 is a millimeter wave high power amplifier based on longitudinal distributed power synthesis in waveguide.
In the figure:
10. a distribution unit; 11. a first waveguide; 12. a first waveguide cavity; 14. a first microstrip coupling probe; 15. an insulating column; 21. a first amplifying unit; 22. a second amplifying unit; 30. a synthesis unit; 31. a second waveguide; 32. a second waveguide cavity; 34. a second microstrip coupling probe.
Detailed Description
The present invention will now be described in further detail with reference to the accompanying drawings. These drawings are simplified schematic diagrams each illustrating the basic structure of the present invention only in a schematic manner, and thus show only the constitution related to the present invention.
In the description of the present invention, it is to be understood that the terms "central," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," "circumferential," and the like are used in the orientations and positional relationships indicated in the drawings for convenience in describing the invention and to simplify the description, and are not intended to indicate or imply that the referenced devices or elements must have a particular orientation, be constructed and operated in a particular orientation, and are therefore not to be considered limiting of the invention. Furthermore, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means two or more unless otherwise specified.
In the description of the present invention, it should be noted that unless otherwise explicitly stated or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
Millimeter waves refer to electromagnetic waves having a wavelength of between 1 and 10 millimeters, and a frequency range of between 30 and 300 GHz. Due to the unique spectrum characteristics, the millimeter wave technology is widely applied to the industries of telecommunication, wireless communication, automobiles, national defense and aerospace, imaging, safety, medical treatment and the like, and along with the construction of low-earth orbit satellites and the commercial use of 5G millimeter wave communication, the requirements on related technologies in the millimeter wave field are greatly increased. In the millimeter wave frequency band, the acquisition of high-power signals is always a challenging problem, and with the participation of ultra-long-range satellite communication, vehicle-mounted radar, remote sensing and millimeter wave 5G coverage, the requirement on the millimeter wave high-power solid-state power amplifier of a core part in a transceiver is more and more urgent, and the requirements on the output power and the amplification efficiency which can be achieved by the power amplifier are increasingly improved.
The output power of the amplifier in the millimeter wave frequency band is limited, and the adoption of the power synthesis technology is an effective solution to realize high-power output. Currently, the most applied power combining techniques include both circuit combining and spatial power combining.
(I) Circuit Synthesis
The circuit synthesis technology is to combine a plurality of power units through a synthesis network to obtain larger power output, and generally adopts a multi-stage impedance transformation Wilkinson bridge and a multi-finger Lange coupler in a planar transmission line structure, and the expansion of the synthesis path number is realized by cascading the power units with themselves or with each other. If multi-path synthesis is required, power synthesis of a multi-level tree structure is required to be realized step by step through a multi-level synthesis network, the number of synthesis network stages is increased along with the increase of the number of synthesis branches, and the synthesis loss is rapidly increased along with the number of synthesis stages. For millimeter wave N-path solid state power synthesis, as the number of synthesis branches increases, the corresponding synthesis network has mode problems and multi-path solid state power device integration problems during synthesis besides the reasons of structure, loss, working bandwidth and the like. The existing N-path power combining network has forms of a radial line combining circuit, a coaxial-waveguide combining circuit, a rugker combining circuit and the like. In these conventional N-path power combining networks, due to structural and technological reasons, the number of branches participating in the combining is small, the circuit loss is high, and the method can hardly be used for effectively realizing multi-path combining in a millimeter wave frequency band.
Another special form of circuit synthesis is chip-level synthesis. The chip-level synthesis technology field, along with the development of semiconductor material technology, microwave and millimeter wave integration technology, precision processing technology and computer application technology, adopts the above circuit-level synthesis technology, especially the multilevel tree binary synthesis technology, and obtains microwave and millimeter wave power single chips by multi-path synthesis on the same semiconductor substrate. In recent decades, combining the outputs of multiple transistors on the same chip through a multilevel binary Wilkinson bridge network has yielded good results on millimeter wave low side GaAs MMIC power devices.
The main factor limiting the output capability of a monolithically integrated power amplifier is the composite circuit losses. The transmission line fabricated on the semiconductor substrate has a high loss, and when the number of devices participating in synthesis increases, the signal path is long, the path loss is large, the synthesis efficiency is low at the last several stages of synthesis in the multi-stage synthesis, and it is difficult to effectively realize the multi-branch synthesis. In addition, on a single integrated circuit chip with limited area, a plurality of power tube cores work simultaneously, and the problem of heat transfer caused by centralized multiple heat sources is serious. In addition, on the MMIC power device of the multiplex synthesis, most chip area is used as a synthesis network and passive matching, and the manufacturing cost of the device of the multiplex synthesis is higher. Typically, in chip-scale synthesis, the number of synthesis stages generally does not exceed three. In order to improve the output capability of a single MMIC power chip, besides the research on a lower-loss multi-path synthesis circuit network, the most effective way is to search for a new device and a new method starting from semiconductor materials, devices and processes.
In a word, the planar transmission line has larger and larger loss along with the frequency rise, so that the power synthesis efficiency and the application space of the circuit-level synthesis in the high-frequency millimeter wave are limited.
(II) spatial power combining
The space power synthesis technology is a microwave millimeter wave power synthesis method proposed in the eighties, and although the technology is proposed in the early eighties, the technology is really valued by people and widely researched in the late eighties and the ninety. The space power synthesis technology is one of the most active and most promising research subjects in the technical field of microwave and millimeter wave at present, and the biggest difference between the space power synthesis technology and other power synthesis methods is that the synthesis space can be designed to be large enough to realize power synthesis of multiple devices on frequencies with short wavelength, such as microwave and millimeter wave.
Three microwave and millimeter wave space power synthesis technologies which have been researched more in recent decades are respectively as follows: (a) quasi-optical power synthesis; (b) synthesizing power in the waveguide; (C) and synthesizing free space wave power. The quasi-optical power synthesis technology adopts a lens and a polarizer to control an electromagnetic field in a synthesis area, so as to achieve the purpose of power effective synthesis. The power synthesis in the waveguide is to insert an active amplification array in the waveguide and control the modes of an electromagnetic field and a waveguide internal field through the waveguide. And the free space wave power synthesis adopts the over-mode waveguide to increase the cross section of the waveguide, so that the power synthesis of more amplification units can be realized. Free-space wave power combining is a variation of quasi-optical power combining, and is the biggest difference from quasi-optical power combining in that: free-space wave power synthesis is a non-resonant type power synthesis, while quasi-optical power synthesis is a resonant type power synthesis.
From the viewpoint of obtaining higher solid-state millimeter wave power, the free space/quasi-optical power synthesis technique shows outstanding advantages. In the synthesis technology, a plurality of power radiation units realize power superposition in space according to a correct phase relation, the superposed power can be received by a probe, and a power superposition point can also be directly positioned at a space high-power demand. Unlike circuit synthesis, in the space/quasi-optical power synthesis technology, power is coupled into a large-diameter guided wave beam by an active device, and then the guided wave beam is focused to a space power demand point or is converted into a waveguide mode for output, and synthesis loss is mainly caused when the output of the active device is coupled into a propagation wave beam and the propagation wave beam is coupled to a power demand point/port. In this synthesis technique, the large diameter beam cross-section allows a greater number of synthesis elements to be employed, thereby providing greater output power; and all the synthesis units are in parallel working state, and the loss is irrelevant to the number of the synthesis units under the ideal condition, so that the synthesis technology has obvious advantages in the case of large number of the synthesis units, and can meet the requirement of high power. However, in the multi-path space/quasi-optical synthesis technology, the whole synthesis system has a complex structure and is difficult to design and manufacture; the synthesized output power is influenced by the phase relation among all paths of radiation waves of the collimation optical array and the space radiation power collection efficiency, ensures that all amplifying units in the array are uniformly irradiated, and is very critical to fully exert the power output capability of all devices in the array; in addition, a quasi-optical array composed of a plurality of solid-state power amplifiers is also an array with concentrated multiple heat sources, so that the electric performance of the array is ensured, meanwhile, the effective heat transmission path in the array is difficult to be considered, and the normal work of power devices in the array is difficult to be ensured.
Power combining in waveguides has been used in many ways and has been reported with a large number of efforts to achieve high power output. However, as the number of synthesized devices increases and the frequency increases, the cavity space becomes smaller and smaller, and the modes generated by various discontinuous boundaries become more and more complex, thereby seriously affecting the operational stability, the synthesis efficiency and the output power of the power synthesizer. Therefore, if a single-cavity multi-device power synthesis technology is adopted in the millimeter wave band, the number of synthesized devices is generally not more than 4-6.
The millimeter wave high-power amplifier is built based on longitudinal distributed power synthesis in the waveguide, a waveguide structure of the longitudinal distributed power synthesis replaces a traditional planar transmission line to serve as a main transmission line of radio-frequency signals, energy is converted to a planar circuit through a transition structure at a position needing to be amplified by an amplifying device, the length of the planar transmission line with high loss is effectively shortened, the power synthesis efficiency and the power capacity of the whole amplifier are improved, and the installation structure and the production process of the power amplifier are simplified.
As shown in fig. 1 to 3, a millimeter wave high power amplifier based on longitudinal distributed power synthesis in waveguide comprises: the distribution unit 10, the amplifying unit and the synthesizing unit 30, the distribution unit 10 distributes the signal input from the first waveguide port to a plurality of signal outputs through the plurality of first microstrip coupling probes 14 along the waveguide transmission path, the distribution unit 10 includes: the first waveguide 11 and the N-path first microstrip coupling probe 14, a first waveguide cavity 12 is arranged in the first waveguide 11, the front end of the first waveguide 11 is open to form a first waveguide port, a waveguide flange is arranged at the front end of the first waveguide 11, the rear end of the first waveguide 11 is closed, N through holes are arranged on the side wall of the first waveguide 11, the through holes are sequentially arranged at intervals in the front-back direction, and the through holes penetrate through the side wall of the first waveguide 11 and are communicated with the first waveguide cavity 12; the first microstrip coupling probes 14 correspond to the through holes one by one, one end of each first microstrip coupling probe 14 penetrates through the through hole and faces the first waveguide cavity 12, and the output ends of the first microstrip coupling probes 14 are all 50-ohm impedance. The side wall of the first waveguide 11 is fixedly provided with insulating columns 15, the insulating columns 15 correspond to the first microstrip coupling probes 14 one by one, and the first microstrip coupling probes 14 abut against the insulating columns 15.
The amplifying unit is electrically connected to the distributing unit 10, and amplifies the multi-path signal, and the amplifying unit includes: the first amplification unit 21 comprises N amplifiers, the amplifiers correspond to the first microstrip coupling probes 14 one by one, the other ends of the first microstrip coupling probes 14 are connected with the corresponding amplifier input ends, the second amplification unit 22 is used for amplifying signals of the first amplification unit 21, the second amplification unit 22 comprises N amplifiers, the input ends of the amplifiers of the second amplification unit 22 are correspondingly connected with the output ends of the amplifiers of the first amplification unit 21, and the output ends of the amplifiers of the second amplification unit 22 are correspondingly connected with the second microstrip coupling probes 34.
The synthesizing unit 30 is electrically connected to the amplifying unit, the synthesizing unit 30 synthesizes the multiple amplified signals by the multiple second microstrip coupling probes 34 and outputs the multiple amplified signals from the second waveguide port along the waveguide transmission path, and the synthesizing unit 30 includes: the second waveguide 31 and the N second microstrip coupling probes 34 are provided, a second waveguide cavity 32 is provided in the second waveguide 31, a second waveguide port is formed by opening the front end of the second waveguide 31, a waveguide flange is provided at the front end of the second waveguide 31, the rear end of the second waveguide 31 is closed, N through holes are provided on the side wall of the second waveguide 31, the through holes are sequentially arranged at intervals in the front-back direction, the through holes penetrate through the side wall of the second waveguide 31 and are communicated with the second waveguide cavity 32, the second microstrip coupling probes 34 and the through holes correspond one to one another, one end of the second microstrip coupling probe 34 penetrates through the through holes and faces the second waveguide cavity 32, and the other end of the second microstrip coupling probe 34 is connected with the output end of the amplifier.
The power synthesis amplifier adopts a typical circuit-level synthesis topological structure, namely, millimeter wave signals to be amplified pass through a 1-to-N power distribution network, are divided into N paths of signals, and are respectively sent to N amplification units for power amplification, and the amplified N paths of signals are subjected to complexing through a subsequent N-to-1 power synthesis network to form a high-power millimeter wave signal and then are output. Without considering the loss of the network, the power capacity of the final power amplifier is theoretically N times that of a single amplifier unit.
The invention discloses a longitudinally distributed power distribution/synthesis network in a waveguide, which is an original invention for using a waveguide-microstrip conversion structure as power distribution or synthesis.
The waveguide cavity is made of metal, the inner wall of the waveguide cavity is plated with high-conductivity metal layers such as gold or silver, the cavity is filled with air, the inner cavity is a rectangular cavity, the width and height of the rectangular cross section adopt standard sizes of all wave bands, the length of the cavity is determined by the number N of amplifiers participating in power synthesis, theoretically, the N and the length of the cavity can be infinite, the length of a short-circuit section and the distance between all micro-strip coupling probes are obtained by full-wave electromagnetic simulation design according to optimization of a distributed network power division ratio, the lowest insertion loss, the best matching and the like.
The microstrip coupling probe is a narrow strip-shaped microstrip line, and is inserted into a waveguide coupling millimeter wave electromagnetic energy to a microstrip transmission line, the installation direction of the microstrip coupling probe is that a microstrip surface is parallel to a waveguide cross section (E surface), the microstrip probe extends into a waveguide length, a probe microstrip line impedance matching structure and the like, and the microstrip coupling probe is obtained by full-wave electromagnetic simulation design according to optimization of a distributed network power ratio, minimum insertion loss, optimal matching and the like.
In the manufacturing implementation of the millimeter wave high-power amplifier, each amplification channel can be manufactured on N independent sheet-shaped units and then superposed to form the final amplifier, so that the millimeter wave high-power amplifier has the characteristics of simplicity in installation and high productivity.
The construction method of the millimeter wave high-power amplifier can be applied to various high-frequency millimeter wave frequency bands, even submillimeter wave frequency bands and terahertz frequency bands.
The millimeter wave high-power amplifier based on the longitudinally distributed power synthesis in the waveguide replaces the traditional coaxial or planar transmission line with the transmission line with a low-loss waveguide structure as a main transmission line of a radio-frequency signal, and converts energy to a planar circuit through the waveguide-microstrip transition structure at a position needing to be amplified by an amplifying device, so that the length of the planar transmission line with high loss is effectively shortened, and the efficiency of the power amplification synthesis is improved.
The millimeter wave high-power amplifier has the characteristics of miniaturization, high integration and all solid state, and is easy to dissipate heat. Theoretically, the method for constructing the high-power amplifier of the invention has no limit to the number of synthesis devices and channels.
In summary, the millimeter wave high-power amplifier based on the waveguide internal longitudinal distributed power synthesis of the invention is not limited by the number of devices and channels, can efficiently synthesize and obtain high-power millimeter wave output through the high and low frequency bands, is simple to install and easy to dissipate heat, can significantly improve the synthesis efficiency and producibility of the power synthesis type amplifier, and the constructed high-power amplifier has the characteristics of miniaturization, high integration and all solid state.
In light of the foregoing description of the preferred embodiment of the present invention, many modifications and variations will be apparent to those skilled in the art without departing from the spirit and scope of the invention. The technical scope of the present invention is not limited to the contents of the specification, and must be determined by the scope of the claims.
Claims (9)
1. A millimeter wave high-power amplifier built based on longitudinal distributed power synthesis in waveguide is characterized by comprising:
the distribution unit (10) distributes the signal input from the first waveguide port into a plurality of signal outputs along the waveguide transmission path through a plurality of first microstrip coupling probes (14);
the amplifying unit is electrically connected with the distribution unit (10) and amplifies the multi-path signals;
and the synthesis unit (30), the synthesis unit (30) is electrically connected with the amplification unit, and the synthesis unit (30) synthesizes the multiple amplified signals through the multiple second microstrip coupling probes (34) and outputs the signals from the second waveguide port along the waveguide transmission path.
2. Building a millimeter wave high power amplifier based on longitudinal distributed power synthesis within a waveguide according to claim 1, characterized in that said distribution unit (10) comprises:
the waveguide structure comprises a first waveguide (11), wherein a first waveguide cavity (12) is arranged in the first waveguide (11), the front end of the first waveguide (11) is opened to form a first waveguide port, the rear end of the first waveguide (11) is closed, at least two through holes are formed in the side wall of the first waveguide (11), and the through holes penetrate through the side wall of the first waveguide (11) and are communicated with the first waveguide cavity (12);
the first microstrip coupling probes (14) are in one-to-one correspondence with the through holes, and one end of each first microstrip coupling probe (14) penetrates through the through hole and faces the first waveguide cavity (12).
3. The built millimeter wave high power amplifier based on longitudinal distributed power synthesis within a waveguide of claim 2, wherein the amplifying unit comprises:
the first amplification unit (21) comprises at least two amplifiers, the amplifiers correspond to the first microstrip coupling probes (14) one by one, and the other ends of the first microstrip coupling probes (14) are connected with the corresponding amplifier input ends.
4. The building of millimeter wave high power amplifier based on longitudinal distributed power synthesis within waveguide according to claim 3, characterized in that said synthesis unit (30) comprises:
a second waveguide (31), wherein a second waveguide cavity (32) is arranged in the second waveguide (31), the front end of the second waveguide (31) is open to form a second waveguide port, the rear end of the second waveguide (31) is closed, at least two through holes are arranged on the side wall of the second waveguide (31), and the through holes penetrate through the side wall of the second waveguide (31) and are communicated with the second waveguide cavity (32);
the second microstrip coupling probes (34) are in one-to-one correspondence with the through holes, one end of each second microstrip coupling probe (34) penetrates through the through hole and faces the second waveguide cavity (32), and the other end of each second microstrip coupling probe (34) is connected with the output end of the amplifier.
5. The built millimeter wave high power amplifier based on longitudinal distributed power synthesis within a waveguide of claim 2, wherein the output ends of the first microstrip coupling probe (14) are each 50 ohm impedance.
6. The millimeter wave high power amplifier built based on longitudinal distributed power synthesis in waveguide according to claim 4, wherein the amplifying unit further comprises a second amplifying unit (22) for amplifying the signal of the first amplifying unit (21), the second amplifying unit (22) comprises at least two amplifiers, the input ends of the amplifiers of the second amplifying unit (22) are correspondingly connected with the output ends of the amplifiers of the first amplifying unit (21), and the output ends of the amplifiers of the second amplifying unit (22) are correspondingly connected with the second microstrip coupling probe (34).
7. The building of millimeter wave high power amplifier based on longitudinal distributed power synthesis within waveguide as claimed in claim 1, wherein the front ends of said first waveguide (11) and said second waveguide (31) each have a waveguide flange.
8. The built millimeter wave high power amplifier based on longitudinal distributed power synthesis in waveguide according to claim 1, wherein the through holes are arranged at intervals in sequence along the front-back direction.
9. The built millimeter wave high-power amplifier based on longitudinal distributed power synthesis in waveguide according to claim 1, wherein the insulating columns (15) are fixedly arranged on the side wall of the first waveguide (11), the insulating columns (15) are in one-to-one correspondence with the first microstrip coupling probes (14), and the first microstrip coupling probes (14) abut against the insulating columns (15).
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210426494.4A CN114725641A (en) | 2022-04-22 | 2022-04-22 | Millimeter wave high-power amplifier built based on longitudinal distributed power synthesis in waveguide |
| PCT/CN2022/089888 WO2023201769A1 (en) | 2022-04-22 | 2022-04-28 | Millimeter wave high-power amplifier constructed based on intra-waveguide longitudinal distributed power synthesis |
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| CN202210426494.4A CN114725641A (en) | 2022-04-22 | 2022-04-22 | Millimeter wave high-power amplifier built based on longitudinal distributed power synthesis in waveguide |
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Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030197572A1 (en) * | 2002-04-23 | 2003-10-23 | Xytrans, Inc. | Microstrip-to-waveguide power combiner for radio frequency power combining |
| US20040108903A1 (en) * | 2002-12-09 | 2004-06-10 | Eswarappa Channabasappa | Compact slotted-waveguide spatial power divider/combiner/amplifier |
| CN201556693U (en) * | 2009-10-28 | 2010-08-18 | 华南理工大学 | Symmetrical coupling wave and guiding and traveling wave power synthesizing amplifier |
| CN102709661A (en) * | 2012-05-30 | 2012-10-03 | 东南大学 | Microwave and millimeter-wave modular power divider/combiner |
| CN105390787A (en) * | 2015-12-16 | 2016-03-09 | 中国电子科技集团公司第四十一研究所 | Novel composite function gradient millimeter wave waveguide power distribution synthesizer |
| CN108448219A (en) * | 2018-05-08 | 2018-08-24 | 成都英微特微波技术有限公司 | A kind of E wave bands waveguide E-T branches and multiprobe coupled structure power synthesis amplifier |
| CN109524754A (en) * | 2018-11-19 | 2019-03-26 | 中电科仪器仪表有限公司 | The waveguide power synthesis network and method in highly integrated formula short transmission path |
| CN113517527A (en) * | 2021-08-25 | 2021-10-19 | 中电科思仪科技股份有限公司 | Single-sided double-ridge double-probe waveguide power divider, power combiner and synthesis method |
-
2022
- 2022-04-22 CN CN202210426494.4A patent/CN114725641A/en active Pending
- 2022-04-28 WO PCT/CN2022/089888 patent/WO2023201769A1/en unknown
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030197572A1 (en) * | 2002-04-23 | 2003-10-23 | Xytrans, Inc. | Microstrip-to-waveguide power combiner for radio frequency power combining |
| US20040108903A1 (en) * | 2002-12-09 | 2004-06-10 | Eswarappa Channabasappa | Compact slotted-waveguide spatial power divider/combiner/amplifier |
| CN201556693U (en) * | 2009-10-28 | 2010-08-18 | 华南理工大学 | Symmetrical coupling wave and guiding and traveling wave power synthesizing amplifier |
| CN102709661A (en) * | 2012-05-30 | 2012-10-03 | 东南大学 | Microwave and millimeter-wave modular power divider/combiner |
| CN105390787A (en) * | 2015-12-16 | 2016-03-09 | 中国电子科技集团公司第四十一研究所 | Novel composite function gradient millimeter wave waveguide power distribution synthesizer |
| CN108448219A (en) * | 2018-05-08 | 2018-08-24 | 成都英微特微波技术有限公司 | A kind of E wave bands waveguide E-T branches and multiprobe coupled structure power synthesis amplifier |
| CN109524754A (en) * | 2018-11-19 | 2019-03-26 | 中电科仪器仪表有限公司 | The waveguide power synthesis network and method in highly integrated formula short transmission path |
| CN113517527A (en) * | 2021-08-25 | 2021-10-19 | 中电科思仪科技股份有限公司 | Single-sided double-ridge double-probe waveguide power divider, power combiner and synthesis method |
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| WO2023201769A1 (en) | 2023-10-26 |
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