CN114720097A - Optical detection system for TGG wafer detection - Google Patents
Optical detection system for TGG wafer detection Download PDFInfo
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Abstract
The invention discloses an optical detection system for TGG wafer detection, which belongs to the technical field of TGG wafer detection and comprises a wafer optical library, a planning module, a detection module and a server; the wafer optical library is used for storing optical characteristic data of the TGG wafer; the planning module is used for carrying out optical detection planning on the TGG wafer, setting a TGG wafer detection scheme, acquiring a TGG wafer detection area, and distributing corresponding detection equipment in the TGG wafer detection area according to the acquired TGG wafer detection scheme; the detection module is used for carrying out optical detection on the TGG wafers, a TGG wafer detection scheme is set for an enterprise through the arrangement of the planning module, layout of detection equipment and detection of subsequent TGG wafers are carried out according to the set TGG wafer detection scheme, automatic and intelligent detection of the TGG wafers is achieved, and detection efficiency of the TGG wafers is greatly improved.
Description
Technical Field
The invention belongs to the technical field of TGG wafer detection, and particularly relates to an optical detection system for TGG wafer detection.
Background
TGG single crystal is the best magneto-optical material for manufacturing Faraday rotator and isolator, and the applicable wavelength is 400-1100nm (excluding 470-500 nm); the Faraday rotator consists of a TGG crystal bar and a specially designed magnet; the polarization direction of the light beam passing through the magneto-optical material is deflected under the action of a magnetic field, and the deflection direction is only related to the direction of the magnetic field and is not related to the propagation direction of the light beam; the optical isolator consists of a 45 degree deflecting rotator and a pair of appropriately placed polarizers that allow the beam to pass in only one direction, while blocking the counter-propagating beam.
With the increasing application of the TGG wafers, related production enterprises have higher requirements on the production capacity of the TGG wafers, but the existing TGG wafer detection also has the defects that part of detection steps adopt manual detection, the efficiency is low, and the detection efficiency requirements of the current enterprises cannot be met, so the invention provides an optical detection system for TGG wafer detection, which is used for solving the detection problem of the TGG wafers.
Disclosure of Invention
In order to solve the problems of the above solutions, the present invention provides an optical inspection system for TGG wafer inspection.
The purpose of the invention can be realized by the following technical scheme:
an optical detection system for TGG wafer detection comprises a wafer optical library, a planning module, a detection module and a server;
the wafer optical library is used for storing optical characteristic data of the TGG wafer; the planning module is used for carrying out optical detection planning on the TGG wafer, setting a TGG wafer detection scheme, acquiring a TGG wafer detection area, and distributing corresponding detection equipment in the TGG wafer detection area according to the acquired TGG wafer detection scheme;
the detection module is used for carrying out optical detection on the TGG wafer, and the specific method comprises the following steps:
detecting data of the TGG wafer passing through the TGG wafer detecting area is collected through corresponding detecting equipment, the collected detecting data is integrated into analysis data, and corresponding TGG wafer optical characteristic data is matched from a wafer optical library; acquiring environmental factors of a current detection area according to characteristics of detection equipment, establishing a detection model, integrating optical characteristic data, analysis data and the environmental factors of the TGG wafer into detection input data, inputting the detection input data into the detection model to obtain a detection result, marking the TGG wafer with the detection result of unqualified detection, and screening the marked TGG wafer.
Further, the working method of the wafer optical library comprises the following steps:
acquiring TGG wafer information produced by a current enterprise, performing corresponding optical characteristic retrieval according to the acquired TGG wafer information to acquire optical characteristic retrieval data, performing duplication elimination on the acquired optical characteristic retrieval data, and performing related induction on the duplicated optical characteristic retrieval data according to the corresponding TGG wafer information; and marking the data after the correlation induction as data to be corrected, sending the data to be corrected to corresponding managers in the enterprise for internal correction, marking the data to be corrected as TGG wafer optical characteristic data, and storing the TGG wafer optical characteristic data into a wafer optical library.
Further, the working method of the planning module comprises the following steps:
identifying TGG wafer information required to be detected by an enterprise, marking the TGG wafer information as target wafer information, matching the corresponding TGG wafer optical characteristic data from the wafer optical library according to the target wafer information, and setting a TGG wafer detection scheme according to the obtained TGG wafer optical characteristic data.
Further, the method of setting the TGG wafer inspection recipe according to the obtained TGG wafer optical characteristic data includes:
setting TGG wafer optical characteristic vectors Pi, marking corresponding TGG wafer optical characteristic data labels, mapping the TGG wafer optical characteristic vectors Pi into a vector space, combining the TGG wafer optical characteristic vector Pi areas, marking as vector intervals, and setting representative vectors Di of the vector intervals; setting a matching degree interval according to the vector interval and the representative vector Di, setting a corresponding TGG wafer detection scheme according to the vector interval, and marking a corresponding scheme label on the representative vector Di; establishing a first database, inputting the TGG wafer detection scheme into the first database for storage, and marking the current first database as a detection scheme library;
acquiring optical characteristic data of a TGG wafer needing to be detected at present, performing vector conversion through a conversion module to obtain a matching vector Li, and mapping the matching vector Li to a vector space for matching; and calculating the matching degree Q between the matching vector Li and each representative vector Di according to a matching formula, and matching the matching degree Q to a corresponding matching degree interval to obtain a corresponding TGG wafer detection scheme.
Further, the matching formula is
Further, the method of setting the TGG wafer optical property vector Pi includes:
and establishing a conversion module, and performing vector conversion on the TGG wafer optical characteristic data in the wafer optical library through a conversion model to obtain an TGG wafer optical characteristic vector Pi.
Compared with the prior art, the invention has the beneficial effects that: by setting the wafer optical library, an enterprise can conveniently establish a detection standard and provide a detection basis for the subsequent detection of the TGG wafer; through setting up planning module, set up TGG wafer detection scheme for the enterprise, carry out laying of check out test set and the detection of follow-up TGG wafer according to the TGG wafer detection scheme that sets up, realize the automation and the intelligent detection of TGG wafer, improve the detection efficiency of TGG wafer greatly.
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In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to these drawings without creative efforts.
Fig. 1 is a schematic block diagram of the present invention.
Detailed Description
The technical solutions of the present invention will be described clearly and completely with reference to the following embodiments, and it should be understood that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
As shown in FIG. 1, an optical inspection system for TGG wafer inspection comprises a wafer optical library, a planning module, an inspection module and a server;
the wafer optical library is used for storing optical characteristic data of TGG wafers, and the specific method comprises the following steps:
acquiring TGG wafer information produced by a current enterprise, wherein the TGG wafer information comprises information such as model, substance composition, size and the like, performing corresponding optical characteristic retrieval according to the acquired TGG wafer information to acquire optical characteristic retrieval data, performing duplication elimination on the acquired optical characteristic retrieval data, and performing associated induction on the duplicated optical characteristic retrieval data according to the corresponding TGG wafer information; and marking the data after the correlation induction as data to be corrected, sending the data to be corrected to corresponding managers in the enterprise for internal correction, marking the data to be corrected as TGG wafer optical characteristic data, and storing the TGG wafer optical characteristic data into a wafer optical library.
Because the directly retrieved and collated data may not be uniform with the detection standard in a specific enterprise, the corresponding internal correction is carried out by the management personnel in the enterprise so as to ensure that the data accords with the optical detection of TGG wafers produced in the enterprise; thus, in one embodiment, to further improve automation, a neural network model may be built, automatically modified by the intelligent model based on inspection requirements within the enterprise.
The method for performing correlation induction on the optical characteristic retrieval data after the duplication elimination according to the corresponding TGG wafer information comprises the following steps:
first, since the deduplication of data is common knowledge in the art, without detailed description, the associative summarization refers to the one-to-one correspondence categorization of the optical characteristic search data according to the corresponding TGG wafer information, and for example, the associative summarization may be performed in a table-based categorical correspondence manner, and many other methods capable of implementing the associative summarization are not listed.
The planning module is used for planning optical detection of the TGG wafer, and the specific method comprises the following steps:
identifying TGG wafer information required to be detected by an enterprise, marking the TGG wafer information as target wafer information, matching corresponding TGG wafer optical characteristic data from a wafer optical library according to the target wafer information, setting a TGG wafer detection scheme according to the obtained TGG wafer optical characteristic data, and acquiring a TGG wafer detection area, namely dividing the area into detection areas by the enterprise, wherein the TGG wafer detection area is set according to specific production and detection conditions of the enterprise; and arranging corresponding detection equipment in the TGG wafer detection area according to the TGG wafer detection scheme.
The method for setting the TGG wafer inspection recipe according to the obtained TGG wafer optical characteristic data comprises:
establishing a conversion module, and performing vector conversion on the TGG wafer optical characteristic data in the wafer optical library through a conversion model to obtain an TGG wafer optical characteristic vector Pi, wherein Pi is (P1, P2, …, Pn), i is 1, 2, … …, n, and n is a positive integer; i represents an element in the TGG wafer optical property vector; and printing a corresponding TGG wafer optical characteristic data label, mapping the TGG wafer optical characteristic vector Pi into a vector space, merging the TGG wafer optical characteristic vector Pi areas, marking as vector intervals, and setting a representative vector Di of each vector interval; setting a matching degree interval according to the vector interval and the representative vector Di, wherein the specific calculation process is common knowledge in the field, and therefore detailed description is not given; setting a corresponding TGG wafer detection scheme according to the vector interval, performing discussion setting by an expert group, and marking a corresponding scheme label on a representative vector Di; establishing a first database, inputting the TGG wafer detection scheme into the first database for storage, and marking the current first database as a detection scheme library;
acquiring optical characteristic data of a TGG wafer needing to be detected currently, performing vector conversion through a conversion module to obtain a matching vector Li, and mapping the matching vector Li to a vector space for matching;
according to matching formulas
And calculating the matching degree Q between the matching vector Li and each representative vector Di, and matching the matching degree Q to a corresponding matching degree interval to obtain a corresponding TGG wafer detection scheme.
The conversion module is established based on a CNN network or a DNN network and is used for digitizing the optical characteristic data of the TGG wafer and then carrying out vector conversion, a corresponding TGG wafer optical characteristic data numerical conversion table is established by an expert group, a corresponding training set is set, training is carried out through the set training set, and the specific establishment and training process is common knowledge in the field, so detailed description is omitted.
The method for combining the optical characteristic vector Pi regions of the TGG wafers can directly use the existing vector clustering method for combination.
The method for setting the representative vector Di for each vector interval includes: an intelligent model is established based on a CNN network or a DNN network, a training set is then set for training, and the intelligent model after successful training is set, wherein the specific establishing and training process is common knowledge in the field, so detailed description is not provided.
The detection module is used for carrying out optical detection on the TGG wafer, and the specific method comprises the following steps:
detecting data of the TGG wafer passing through the TGG wafer detecting area is collected through corresponding detecting equipment, the collected detecting data is integrated into analysis data, and corresponding TGG wafer optical characteristic data is matched from a wafer optical library; acquiring environmental factors of a current detection area according to characteristics of detection equipment, establishing a detection model, integrating optical characteristic data, analysis data and the environmental factors of the TGG wafer into detection input data, inputting the detection input data into the detection model to obtain a detection result, marking the TGG wafer with the detection result of unqualified detection, and screening the marked TGG wafer.
The method for acquiring the environmental factors of the current detection area according to the characteristics of the detection equipment comprises the following steps: acquiring which environmental factors the detection equipment is influenced by in the detection process,
marking the corresponding environmental factors reaching the influence indexes as target factors, wherein the influence indexes are the influence degrees reaching the influence detection equipment set by the corresponding expert group, and one equipment is required to be screened by a standard line because the environmental influence factors received by the equipment in the running process are extremely large; and acquiring data corresponding to the target factors, such as factors which can influence detection, such as temperature, humidity, illumination and the like, and marking the acquired data as environmental factors.
The above formulas are all calculated by removing dimensions and taking numerical values thereof, the formula is a formula which is obtained by acquiring a large amount of data and performing software simulation to obtain the closest real situation, and the preset parameters and the preset threshold value in the formula are set by the technical personnel in the field according to the actual situation or obtained by simulating a large amount of data.
The working principle of the invention is as follows: storing the optical characteristic data of the TGG wafer through a wafer optical library; performing optical detection planning of the TGG wafer through a planning module, setting a TGG wafer detection scheme, acquiring a TGG wafer detection area, and distributing corresponding detection equipment in the TGG wafer detection area according to the acquired TGG wafer detection scheme; detecting data of the TGG wafer passing through the TGG wafer detecting area is collected through corresponding detecting equipment, the collected detecting data is integrated into analysis data, and corresponding TGG wafer optical characteristic data is matched from a wafer optical library; acquiring environmental factors of a current detection area according to characteristics of detection equipment, establishing a detection model, integrating optical characteristic data, analysis data and the environmental factors of the TGG wafer into detection input data, inputting the detection input data into the detection model to obtain a detection result, marking the TGG wafer with the detection result of unqualified detection, and screening the marked TGG wafer.
Although the present invention has been described in detail with reference to the preferred embodiments, it will be understood by those skilled in the art that various changes may be made and equivalents may be substituted for elements thereof without departing from the scope of the present invention.
Claims (6)
1. An optical detection system for TGG wafer detection is characterized by comprising a wafer optical library, a planning module, a detection module and a server;
the wafer optical library is used for storing optical characteristic data of the TGG wafer; the planning module is used for carrying out optical detection planning on the TGG wafer, setting a TGG wafer detection scheme, acquiring a TGG wafer detection area, and distributing corresponding detection equipment in the TGG wafer detection area according to the acquired TGG wafer detection scheme;
the detection module is used for carrying out optical detection on the TGG wafer, and the specific method comprises the following steps:
detecting data of the TGG wafer passing through the TGG wafer detecting area is collected through corresponding detecting equipment, the collected detecting data is integrated into analysis data, and corresponding TGG wafer optical characteristic data is matched from a wafer optical library; acquiring environmental factors of a current detection area according to characteristics of detection equipment, establishing a detection model, integrating optical characteristic data, analysis data and the environmental factors of the TGG wafer into detection input data, inputting the detection input data into the detection model to obtain a detection result, marking the TGG wafer with the detection result of unqualified detection, and screening the marked TGG wafer.
2. The optical inspection system of claim 1 wherein the optical library of wafers is operated by the method comprising:
acquiring TGG wafer information produced by a current enterprise, performing corresponding optical characteristic retrieval according to the acquired TGG wafer information to acquire optical characteristic retrieval data, performing duplication removal on the acquired optical characteristic retrieval data, and performing associated induction on the duplicated optical characteristic retrieval data according to the corresponding TGG wafer information; and marking the data after the correlation induction as data to be corrected, sending the data to be corrected to corresponding managers in the enterprise for internal correction, marking the data to be corrected as TGG wafer optical characteristic data, and storing the TGG wafer optical characteristic data into a wafer optical library.
3. The optical inspection system for TGG wafer inspection as claimed in claim 1, wherein the operation method of the planning module comprises:
identifying TGG wafer information required to be detected by an enterprise, marking the TGG wafer information as target wafer information, matching the corresponding TGG wafer optical characteristic data from the wafer optical library according to the target wafer information, and setting a TGG wafer detection scheme according to the obtained TGG wafer optical characteristic data.
4. An optical inspection system for TGG wafer inspection according to claim 3, wherein the method of setting a TGG wafer inspection recipe according to the obtained TGG wafer optical characteristic data comprises:
setting TGG wafer optical characteristic vectors Pi, marking corresponding TGG wafer optical characteristic data labels, mapping the TGG wafer optical characteristic vectors Pi into a vector space, combining the TGG wafer optical characteristic vector Pi areas, marking as vector intervals, and setting representative vectors Di of the vector intervals; setting a matching degree interval according to the vector interval and the representative vector Di, setting a corresponding TGG wafer detection scheme according to the vector interval, and marking a corresponding scheme label on the representative vector Di; establishing a first database, inputting the TGG wafer detection scheme into the first database for storage, and marking the current first database as a detection scheme library;
acquiring optical characteristic data of a TGG wafer needing to be detected at present, performing vector conversion through a conversion module to obtain a matching vector Li, and mapping the matching vector Li to a vector space for matching; and calculating the matching degree Q between the matching vector Li and each representative vector Di according to a matching formula, and matching the matching degree Q to a corresponding matching degree interval to obtain a corresponding TGG wafer detection scheme.
5. The optical inspection system of claim 4 wherein the matching formula is
6. An optical inspection system for TGG wafer inspection according to claim 4 wherein the method of setting TGG wafer optical property vectors Pi comprises:
and establishing a conversion module, and performing vector conversion on the TGG wafer optical characteristic data in the wafer optical library through a conversion model to obtain an TGG wafer optical characteristic vector Pi.
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Denomination of invention: An optical detection system for TGG chip detection Granted publication date: 20230609 Pledgee: China Co. truction Bank Corp Hefei economic and Technological Development Zone Branch Pledgor: ANHUI KERUI SICHUANG CRYSTAL MATERIAL Co.,Ltd. Registration number: Y2024980008319 |