CN114710146A - IGBT soft start control method and circuit and electromagnetic heating equipment - Google Patents

IGBT soft start control method and circuit and electromagnetic heating equipment Download PDF

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Publication number
CN114710146A
CN114710146A CN202210482984.6A CN202210482984A CN114710146A CN 114710146 A CN114710146 A CN 114710146A CN 202210482984 A CN202210482984 A CN 202210482984A CN 114710146 A CN114710146 A CN 114710146A
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circuit
igbt device
sub
voltage
igbt
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彭军
陈劲锋
刘春光
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Shenzhen Chk Co ltd
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Shenzhen Chk Co ltd
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Priority to CN202210482984.6A priority Critical patent/CN114710146A/en
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/36—Means for starting or stopping converters
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
    • H03K17/165—Modifications for eliminating interference voltages or currents in field-effect transistor switches by feedback from the output circuit to the control circuit
    • H03K17/166—Soft switching
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B6/00—Heating by electric, magnetic or electromagnetic fields
    • H05B6/02—Induction heating
    • H05B6/06—Control, e.g. of temperature, of power
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0036—Means reducing energy consumption
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
    • Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Electronic Switches (AREA)

Abstract

The invention relates to the technical field of electromagnetic heating, and discloses an IGBT soft start control method, an IGBT soft start control circuit and electromagnetic heating equipment. The method comprises the following steps: acquiring the collector voltage of the IGBT device, providing a first driving signal to the IGBT device in the turn-on stage of the IGBT device when the collector voltage of the IGBT device is greater than a first voltage threshold value, and providing a second driving signal to the IGBT device until the collector voltage of the IGBT device is less than a second voltage threshold value, so that the IGBT device is sequentially subjected to soft start and normal turn-on; the circuit comprises a control circuit, a driving circuit, a feedback circuit, an IGBT device and a resonant circuit. The invention carries out stage control on the IGBT device by collecting the collector voltage of the IGBT device, so that the IGBT device carries out soft start and normal conduction in sequence, the conduction loss is reduced, and the continuous low-power heating work of the electromagnetic heating equipment is realized.

Description

IGBT soft start control method and circuit and electromagnetic heating equipment
Technical Field
The invention relates to the technical field of electromagnetic heating, in particular to an IGBT soft start control method, an IGBT soft start control circuit and electromagnetic heating equipment.
Background
In the prior art, most of electromagnetic heating products such as an electromagnetic oven, an electromagnetic rice cooker, a pressure cooker and the like adopt a single-tube IGBT device scheme due to cost reasons. Under the high-voltage or low-power working state, the IGBT non-zero voltage is switched on due to insufficient input energy during resonance, the conduction voltage is high, the instantaneous conduction current is large, and the IGBT can be overheated and damaged by explosion. When the pot is inspected and the power is started, the voltage of the collector of the IGBT is 1.4 times that of the alternating current commercial power, the conduction voltage is higher, the instant conduction current is larger, and the instant conduction current can reach more than 150A at high voltage and exceeds the specification range of the IGBT, so that the risk of explosion is high.
Disclosure of Invention
The present invention is directed to a method, a circuit and an electromagnetic heating device for controlling soft start of an IGBT, so as to solve one or more technical problems in the prior art and provide at least one of a beneficial choice and a creation condition.
In a first aspect, a soft start control method for an IGBT is provided, including the following steps:
acquiring the collector voltage of the IGBT device;
when the collector voltage of the IGBT device is larger than a first voltage threshold, providing a first driving signal to the IGBT device at the turn-on stage of the IGBT device, and providing a second driving signal to the IGBT device until the collector voltage of the IGBT device is smaller than a second voltage threshold, so that the IGBT device is sequentially subjected to soft start and normal turn-on;
the first voltage threshold is greater than or equal to the second voltage threshold, and the soft-start voltage of the IGBT device corresponding to the first driving signal is smaller than the driving voltage of the IGBT device corresponding to the second driving signal.
In a second aspect, an IGBT soft start control circuit is provided, which includes a control circuit, a driving circuit, a feedback circuit, an IGBT device, and a resonant circuit;
the control circuit, the drive circuit and the base electrode of the IGBT device are sequentially connected, the collector electrode of the IGBT device is connected with the resonance circuit, one end of the feedback circuit is connected with the collector electrode of the IGBT device, and the other end of the feedback circuit is connected with the control circuit or the drive circuit or the base electrode of the IGBT device;
the control circuit outputs driving voltage to the base electrode of the IGBT device through the driving circuit;
the feedback circuit is used for acquiring the collector voltage of the IGBT device, and when the collector voltage of the IGBT device is greater than a first voltage threshold value, a first driving signal is provided for the IGBT device in the turn-on stage of the IGBT device, and until the collector voltage of the IGBT device is smaller than a second voltage threshold value, a second driving signal is provided for the IGBT device, so that the IGBT device is sequentially subjected to soft start and normal turn-on;
the first voltage threshold is greater than or equal to the second voltage threshold, and the soft-start voltage of the IGBT device corresponding to the first driving signal is smaller than the driving voltage of the IGBT device corresponding to the second driving signal.
According to one embodiment of the invention, the feedback circuit comprises a sampling sub-circuit, an enabling sub-circuit and a voltage dropping sub-circuit;
and one ends of a collector electrode, a sampling sub-circuit, an enabling sub-circuit and a voltage reduction sub-circuit of the IGBT device are sequentially connected, and the other end of the voltage reduction sub-circuit is connected with a driving circuit or a base electrode of the IGBT device.
According to one embodiment of the invention, the sampling sub-circuit comprises a first sampling resistor and a second sampling resistor;
one end of the first sampling resistor is connected with a collector electrode of the IGBT device, the other end of the first sampling resistor and one end of the second sampling resistor are respectively connected with the enabling sub-circuit, and the other end of the second sampling resistor is grounded.
According to one embodiment of the invention, the enabling sub-circuit comprises a first switch tube and a first resistor, wherein a first end of the first switch tube is connected with the step-down sub-circuit, a second end of the first switch tube is grounded, a trigger end of the first switch tube is connected with one end of the first resistor, and the other end of the first resistor is connected with the sampling sub-circuit; or is
The enabling sub-circuit comprises a first switch tube, a first resistor and an operational amplifier, the positive input end of the operational amplifier is connected with the sampling sub-circuit, the negative input end of the operational amplifier is connected with the reference voltage or the output end of the operational amplifier, the output end of the operational amplifier is connected with one end of the first resistor, the other end of the first resistor is connected with the trigger end of the first switch tube, the first end of the first switch tube is connected with the voltage reduction sub-circuit, and the second end of the first switch tube is grounded.
According to an embodiment of the present invention, the first switch tube is a transistor or a MOS tube.
According to one embodiment of the invention, the voltage reduction sub-circuit comprises a second resistor, one end of the second resistor is connected with the enabling sub-circuit, and the other end of the second resistor is connected with the base electrode of the GIBT device or the driving circuit; or is
The voltage reduction sub-circuit comprises a voltage stabilizing diode, the anode of the voltage stabilizing diode is connected with the enabling sub-circuit, and the cathode of the voltage stabilizing diode is connected with the base electrode of the driving circuit or the GIBT device.
According to one embodiment of the invention, the feedback circuit comprises a sampling sub-circuit, an enabling sub-circuit and a voltage dropping sub-circuit;
one end of the collector of the IGBT device, one end of the sampling sub-circuit, one end of the control circuit, one end of the enabling sub-circuit and one end of the voltage reduction sub-circuit are sequentially connected, and the other end of the voltage reduction sub-circuit is connected with the driving circuit or the base electrode of the IGBT device.
According to one embodiment of the invention, the control circuit, the driving circuit, the enabling sub-circuit and the voltage reducing sub-circuit are integrally packaged.
According to one embodiment of the present invention, the driving circuit includes a level shift sub-circuit and a push-pull driving sub-circuit, and the control circuit, the level shift sub-circuit, the push-pull driving sub-circuit and the gate of the IGBT device are connected in sequence.
According to an embodiment of the present invention, the level shift sub-circuit includes a second transistor, a third resistor, a fourth resistor, and a fifth resistor;
direct current voltage is connected to one end of the third resistor and one end of the fifth resistor, the other end of the third resistor and one end of the fourth resistor are connected with the control circuit, the other end of the fourth resistor is connected with a base electrode of the second triode, the other end of the fifth resistor and an input end of the push-pull driving sub-circuit are connected with a collector electrode of the second triode, and an emitting electrode of the second triode is grounded.
According to an embodiment of the present invention, the push-pull driving sub-circuit includes a third transistor, a fourth transistor, a sixth resistor, and a seventh resistor;
the base of the third triode and the base of the fourth triode are connected with the output end of the level conversion sub-circuit, the collector of the third triode is connected with direct current voltage, the emitter of the third triode is connected with the grid of the IGBT device through a sixth resistor and connected with the emitter of the fourth triode through a seventh resistor, the collector of the fourth triode is grounded, the third triode is selected from NPN type triodes, and the fourth triode is selected from PNP type triodes.
In a third aspect, an electromagnetic heating device is provided, which comprises the IGBT soft start control circuit of the second aspect.
The invention has the beneficial effects that: the IGBT device is controlled in stages by collecting the collector voltage of the IGBT device, the driving voltage of the IGBT device is reduced when the collector voltage of the IGBT device exceeds a set value in the starting stage, and then the driving voltage of the IGBT device is recovered after the collector voltage of the IGBT device is reduced to a normal level, so that the IGBT device is sequentially subjected to soft start and normal conduction, the conduction loss of the IGBT device is reduced, and continuous low-power heating work of electromagnetic heating equipment can be realized.
Drawings
Fig. 1 is one of schematic structural diagrams of an IGBT soft start control circuit according to an embodiment of the present invention.
Fig. 2 is a second schematic structural diagram of the IGBT soft start control circuit according to the embodiment of the invention.
Fig. 3 is a third schematic structural diagram of an IGBT soft start control circuit according to an embodiment of the invention.
Fig. 4 is a fourth schematic structural diagram of an IGBT soft start control circuit according to an embodiment of the invention.
Fig. 5 is a fifth schematic structural diagram of an IGBT soft start control circuit according to an embodiment of the invention.
Fig. 6 is a sixth schematic diagram of the structure of the IGBT soft start control circuit according to the embodiment of the present invention.
Fig. 7 is a seventh schematic diagram of the IGBT soft-start control circuit according to the embodiment of the invention.
Fig. 8 is an eighth schematic diagram of the IGBT soft start control circuit according to the embodiment of the invention.
Fig. 9 is a ninth schematic diagram of the IGBT soft start control circuit according to the embodiment of the invention.
Fig. 10 is a tenth of the schematic structural diagram of the IGBT soft start control circuit according to the embodiment of the present invention.
Fig. 11 is an eleventh schematic diagram of a structure of an IGBT soft start control circuit according to an embodiment of the present invention.
Fig. 12 is a flowchart of an IGBT soft start control method according to an embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention more apparent, the present invention will be further described with reference to the embodiments and the accompanying drawings.
In the description of the present invention, it should be understood that the orientation or positional relationship referred to in the description of the orientation, such as upper, lower, front, rear, left, right, etc., is based on the orientation or positional relationship shown in the drawings only for the convenience of description of the present invention and simplification of the description, and does not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus, should not be construed as limiting the present invention.
In the description of the present invention, a plurality of the terms are not limited to a certain number, and a plurality of the terms are two or more, and the terms larger, smaller, larger, and the like are understood to include the number of the terms, and the terms larger, smaller, and the like are understood to include the number of the terms. If the first and second are described for the purpose of distinguishing technical features, they are not to be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated or implicitly indicating the precedence of the technical features indicated. Additionally, appearing throughout and/or representing three side-by-side scenarios, e.g., A and/or B represents a scenario satisfied by A, a scenario satisfied by B, or a scenario satisfied by both A and B.
In the description of the present invention, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, which may include other elements not expressly listed, in addition to those listed.
According to a first aspect of the invention, a soft start control method of an IGBT is provided.
As shown in fig. 12, the IGBT soft start control method provided in the embodiment of the present invention includes the following steps:
and S100, acquiring the collector voltage of the IGBT device.
And S200, when the voltage of the collector electrode of the IGBT device is greater than a first voltage threshold value, providing a first driving signal to the IGBT device in the turn-on stage of the IGBT device, and providing a second driving signal to the IGBT device until the voltage of the collector electrode of the IGBT device is less than a second voltage threshold value, so that the IGBT device is sequentially subjected to soft start and normal turn-on.
The first voltage threshold is greater than or equal to the second voltage threshold, and the soft-start voltage of the IGBT device corresponding to the first driving signal is smaller than the driving voltage of the IGBT device corresponding to the second driving signal.
Specifically, under the control situation of the IGBT device, the collector voltage of the IGBT device is obtained, whether the collector voltage of the IGBT device is larger than a first voltage threshold value or not is judged, when the collector voltage of the IGBT device is larger than the first voltage threshold value, a first driving signal is output in the turn-on stage of the IGBT device, the driving voltage of the IGBT device is adjusted, the driving voltage of the IGBT device is reduced, the IGBT device is in soft start, the collector voltage of the IGBT device is kept to be obtained, when the collector voltage of the IGBT device is smaller than a second voltage threshold value, a second driving signal is output, the driving voltage of the IGBT device is increased and is recovered to a normal state, the IGBT device is normally turned on, and therefore the driving voltage of the IGBT device is firstly low and then high, and the IGBT device is sequentially subjected to soft start and normal turn-on.
It should be noted that the soft start voltage is the driving voltage of the IGBT device at the soft start stage, and the soft start voltage is gradually raised from zero to the rated driving voltage, so that the IGBT device completes the soft start.
According to a second aspect of the present invention, an IGBT soft start control circuit is provided.
As shown in fig. 1, the IGBT soft start control circuit according to the embodiment of the present invention includes a control circuit 100, a driving circuit 200, a feedback circuit 300, an IGBT device 400, and a resonant circuit 500.
The control circuit 100, the driving circuit 200 and the base of the IGBT device 400 are sequentially connected, the collector of the IGBT device 400 is connected to the resonant circuit 500, one end of the feedback circuit 300 is connected to the collector of the IGBT device 400, and the other end of the feedback circuit 300 is connected to the driving circuit 200 or the base of the IGBT device 400.
In practical use, the control circuit 100 outputs a driving voltage to the base of the IGBT device 400 through the driving circuit 200, the feedback circuit 300 is configured to obtain a collector voltage of the IGBT device 400, and when the collector voltage of the IGBT device 400 is greater than a first voltage threshold, a first driving signal is provided to the IGBT device 400 at a turn-on stage of the IGBT device 400, and until the collector voltage of the IGBT device 400 is less than a second voltage threshold, a second driving signal is provided to the IGBT device 400, so that the IGBT device 400 is soft-started and normally turned on first and later. The first voltage threshold is greater than or equal to the second voltage threshold, the soft start voltage of the IGBT device corresponding to the first driving signal is smaller than the driving voltage of the IGBT device corresponding to the second driving signal, and the first voltage threshold and the second voltage threshold are preset values.
Specifically, the control circuit 100, for example, an MCU (microprocessor) outputs a control signal to the driving circuit 200 upon receiving a start instruction to control the driving circuit 200 to output a driving voltage to the IGBT device 400 to turn on the IGBT device 400. The feedback circuit 300 is connected with the collector of the IGBT device 400 to determine whether the collector voltage of the IGBT device 400 is greater than a first voltage threshold, and when the collector voltage of the IGBT device 400 is greater than the first voltage threshold, the feedback circuit 300 outputs a first driving signal to the control circuit 100 or the driving circuit 200 or the base of the IGBT device 400 in the turn-on stage of the IGBT device 400 to reduce the driving voltage of the IGBT device 400, and the IGBT device 400 is soft-started until the collector voltage of the IGBT device is less than a second voltage threshold, and the feedback circuit 300 outputs a second driving signal to restore the driving voltage of the IGBT device 400 to a normal state, and the IGBT device 400 is normally turned on, so that the driving voltage of the IGBT device 400 is first low and then high, and the IGBT device 400 is first and then soft-started and normally turned on.
That is to say, the IGBT soft start control circuit provided by the present invention employs the feedback circuit 300 to monitor the collector voltage generated by the collector of the IGBT device 400 at the moment that the control circuit 100 starts the IGBT device 400 through the drive circuit 200, the feedback circuit 300 compares the sampled collector voltage of the IGBT device 400 with the first voltage threshold and the second voltage threshold, when the collector voltage of the IGBT device 400 exceeds the first voltage threshold, the feedback circuit 300 outputs the first drive signal for reducing the drive voltage of the IGBT device 400, reduces the drive voltage and the on-current of the IGBT device 400, so as to soft start the IGBT device 400, the collector voltage of the IGBT device 400 drops after the soft start phase, when the collector voltage of the IGBT device 400 is less than the second voltage threshold, the feedback circuit 300 outputs the second drive signal for restoring the drive voltage of the IGBT device 400, so that the drive voltage of the IGBT device 400 rises to the normal level, the IGBT device 400 is turned on normally.
In order to further explain the IGBT soft start control circuit provided by the present invention, the IGBT soft start control circuit provided by the present invention is explained below with reference to practical embodiments.
As shown in fig. 2, according to one embodiment of the present invention, the feedback circuit 300 includes a sampling sub-circuit 310, an enabling sub-circuit 320, and a voltage dropping sub-circuit 330.
One end of the collector of the IGBT device 400, one end of the sampling sub-circuit 310, one end of the enabling sub-circuit 320, and one end of the step-down sub-circuit 330 are sequentially connected, and the other end of the step-down sub-circuit 330 is connected to the driving circuit 200 or the base of the IGBT device 400.
In this embodiment, the sampling sub-circuit 310 transmits the collected collector voltage of the IGBT device 400 to the enable sub-circuit 320, the enable sub-circuit 320 enables according to the collector voltage of the IGBT device 400 and the first and second voltage thresholds, when the collector voltage of the IGBT device 400 exceeds the first voltage threshold, the enabling sub-circuit 320 enables the step-down sub-circuit 330, the step-down sub-circuit 330 outputs the first driving signal to the driving circuit 200 or the base of the IGBT device 400, reduces the driving voltage and the on-current of the IGBT device 400, causes the IGBT device 400 to soft-start, when the collector voltage of the IGBT device 400 is less than the second voltage threshold, the enabling sub-circuit 320 does not enable, the output terminal of the voltage-dropping sub-circuit 330 that is not enabled is in a low level state (second driving signal), the driving voltage of the IGBT device 400 gradually recovers to a normal level, and the IGBT device 400 is normally turned on.
As shown in fig. 3, the sampling sub-circuit 310 includes a first sampling resistor RS1 and a second sampling resistor RS2 according to an embodiment of the present invention. One end of the first sampling resistor RS1 is connected to the collector of the IGBT device 400, the other end of the first sampling resistor RS1 and one end of the second sampling resistor RS2 are connected to the enable sub-circuit 320, and the other end of the second sampling resistor RS2 is grounded.
In this embodiment, when the collector of the IGBT device 400 is powered on, a voltage difference is formed across the first sampling resistor RS1, so that the enabling sub-circuit 320 connected to the first sampling resistor RS1 enables the step-down sub-circuit 330 when detecting that the collector voltage of the IGBT device 400 exceeds the first voltage threshold.
As shown in fig. 4, the enable sub-circuit 320 includes a first switch transistor Q1 and a first resistor R1 according to an embodiment of the present invention. The first end of the first switch tube Q1 is connected to the voltage dropping sub-circuit 330, the second end of the first switch tube Q1 is grounded, the trigger end of the first switch tube Q1 is connected to one end of the first resistor R1, and the other end of the first resistor R1 is connected to the sampling sub-circuit 310.
In this embodiment, the sampling sub-circuit 310 samples a sampling signal obtained by sampling the collector voltage of the IGBT device 400 to flow to the trigger end of the first switch tube Q1, and when the collector voltage of the IGBT device 400 exceeds the first voltage threshold, the sampling signal output by the sampling sub-circuit 310 triggers the first switch tube Q1 to be turned on, and the buck sub-circuit 330 connected to the base of the drive circuit 200 or the IGBT device 400 is grounded, so as to pull down the drive voltage of the IGBT device 400; conversely, when the collector voltage of the IGBT device 400 is less than the second voltage threshold, the first switching transistor Q1 gradually enters the off state, the buck sub-circuit 330 fails to turn on when the first switching transistor Q1 is turned off, and the driving voltage of the IGBT device 400 is maintained at the normal level.
As shown in fig. 5, the enable sub-circuit 320 includes a first switching tube Q1, a first resistor R1, and an operational amplifier U1 according to an embodiment of the present invention. The positive input end of the operational amplifier U1 is connected to the sampling sub-circuit 310, the negative input end of the operational amplifier U1 is connected to the reference voltage Vref, the output end of the operational amplifier U1 is connected to one end of the first resistor R1, the other end of the first resistor R1 is connected to the trigger end of the first switch tube Q1, the first end of the first switch tube Q1 is connected to the voltage dropping sub-circuit 330, and the second end of the first switch tube Q1 is grounded.
In this embodiment, a sampling signal obtained by sampling the collector voltage of the IGBT device 400 by the sampling sub-circuit 310 flows to the positive input end of the operational amplifier U1, and is compared with the reference voltage Vref input from the negative input end of the operational amplifier U1, when the sampling signal corresponding to the collector voltage of the IGBT device 400 exceeds the reference voltage Vref, the operational amplifier U1 outputs a high-level signal and triggers the first switch tube Q1 to be turned on, and the buck sub-circuit 330 pulls down the driving voltage of the IGBT device 400 after the first switch tube Q1 is turned on; on the contrary, when the collector voltage of the IGBT device 400 is smaller than the reference voltage Vref, the operational amplifier U1 outputs a low level signal, the first switch Q1 is turned off, the buck sub-circuit 330 is not turned on, and the driving voltage of the IGBT device 400 is maintained at a normal level.
As shown in fig. 6, according to an embodiment of the present invention, the difference from the embodiment provided in fig. 5 is that the negative input terminal of the operational amplifier U1 is connected to the output terminal of the operational amplifier U1, so as to form an inverting amplifier circuit having the function of amplifying the input signal and inverting the output.
In the embodiments of fig. 4 to 6, the first switch Q1 is a transistor or a MOS transistor. When first switch tube Q1 is the triode, the first end of first switch tube Q1 is the collecting electrode, and the second end of first switch tube Q1 is the projecting pole, and the trigger end in first switch tube Q1 is the base, and when first switch tube Q1 was the MOS pipe, the first end of first switch tube Q1 was the drain electrode, and the second end of first switch tube Q1 was the source electrode, and the trigger end in the first switch tube Q1 was the grid.
As shown in fig. 7, according to an embodiment of the present invention, the voltage dropping sub-circuit 330 includes a second resistor R2, one end of the second resistor R2 is connected to the enabling sub-circuit 320, and the other end of the second resistor R2 is connected to the driving circuit 200.
In this embodiment, the second resistor R2 is used as a voltage dividing resistor, and the second resistor R2 is grounded when the enabling sub-circuit 320 is enabled, so that the dc voltage on the driving circuit 200 is partially output to the gate of the IGBT device 400, and partially flows to the ground, thereby pulling down the driving voltage of the IGBT device 400.
As shown in fig. 8, according to an embodiment of the present invention, the difference from the embodiment provided in fig. 7 is that the step-down sub-circuit 330 includes a zener diode ZD1, the anode of the zener diode ZD1 is connected to the enable sub-circuit 320, and the cathode of the zener diode ZD1 is connected to the base of the GIBT device.
As shown in fig. 10, another feedback circuit 300 configuration is provided according to one embodiment of the present invention. The feedback circuit 300 includes a sampling sub-circuit 310, an enabling sub-circuit 320, and a step-down sub-circuit 330, wherein one end of the collector of the IGBT device 400, the sampling sub-circuit 310, the control circuit 100, the enabling sub-circuit 320, and the step-down sub-circuit 330 are connected in sequence, and the other end of the step-down sub-circuit 330 is connected to the driving circuit 200 or the base of the IGBT device 400.
In this embodiment, the sampling sub-circuit 310 sends the collected collector voltage of the IGBT device 400 to the control circuit 100, the control circuit 100 triggers the control enabling sub-circuit 320 to enable according to the collector voltage of the IGBT device 400 and the first and second voltage thresholds, when the collector voltage of the IGBT device 400 exceeds the first voltage threshold, the control circuit 100 controls the enabling sub-circuit 320 to enable the buck sub-circuit 330, the buck sub-circuit 330 outputs the first driving signal to the driving circuit 200 or the base of the IGBT device 400, the driving voltage and the on-state current of the IGBT device 400 are reduced, so that the IGBT device 400 is soft-started, when the collector voltage of the IGBT device 400 is less than the second voltage threshold, the control circuit 100 controls the enabling sub-circuit 320 not to enable, the output terminal of the buck sub-circuit 330 that is not enabled is in a low level state (the second driving signal), the driving voltage of the IGBT device 400 gradually returns to a normal level, the IGBT device 400 is normally on.
The sampling sub-circuit 310, the enabling sub-circuit 320, and the voltage-dropping sub-circuit 330 in this embodiment may adopt the same structure as the sampling sub-circuit 310, the enabling sub-circuit 320, and the voltage-dropping sub-circuit 330 in the above embodiments, and the principles of the sampling sub-circuit 310, the enabling sub-circuit 320, and the voltage-dropping sub-circuit 330 are the same as those of the above embodiments, and are not described again here.
As shown in fig. 9, according to an embodiment of the present invention, the driving circuit 200 includes a level-shift sub-circuit 210 and a push-pull driving sub-circuit 220, and the control circuit 100, the level-shift sub-circuit 210, the push-pull driving sub-circuit 220, and the gates of the IGBT device 400 are connected in sequence.
The level shift sub-circuit 210 includes a second transistor Q2, a third resistor R3, a fourth resistor R4, and a fifth resistor R5. One end of the third resistor R3 and one end of the fifth resistor R5 are connected with a direct-current voltage, the other end of the third resistor R3 and one end of the fourth resistor R4 are connected with the control circuit 100, the other end of the fourth resistor R4 is connected with a base electrode of the second triode Q2, the other end of the fifth resistor R5 and the input end of the push-pull driving sub-circuit 220 are connected with a collector electrode of the second triode Q2, and an emitter electrode of the second triode Q2 is grounded.
The push-pull driving sub-circuit 220 includes a third transistor Q3, a fourth transistor Q4, a sixth resistor R6, and a seventh resistor R7. The base of the third triode Q3 and the base of the fourth triode Q4 are connected to the output end of the level shifter sub-circuit 210, the collector of the third triode Q3 is connected to a direct current voltage, the emitter of the third triode Q3 is connected to the gate of the IGBT device 400 through a sixth resistor R6 and to the emitter of the fourth triode Q4 through a seventh resistor R7, the collector of the fourth triode Q4 is grounded, the third triode Q3 is an NPN type triode, and the fourth triode Q4 is a PNP type triode.
In this embodiment, the level shift sub-circuit 210 receives the driving signal output by the control circuit 100, and the level of the driving signal changes alternately, so that the third transistor Q3 and the fourth transistor Q4 of the push-pull driving sub-circuit 220 are turned on alternately, specifically, when the driving signal is at a low level, the second transistor Q2 and the fourth transistor Q4 are turned off, the third transistor Q3 is turned on to output a dc voltage as a driving voltage for driving the IGBT device 400, and conversely, the second transistor Q2 and the fourth transistor Q4 are turned on, the third transistor Q3 is turned off, and the driving voltage is not output to the IGBT device 400.
According to the IGBT soft start control circuit provided by the embodiment of the invention, the IGBT device 400 is controlled in stages by collecting the collector voltage of the IGBT device 400, the driving voltage of the IGBT device 400 is reduced when the collector voltage of the IGBT device 400 exceeds a set value in the starting stage, and then the driving voltage of the IGBT device 400 is recovered after the collector voltage of the IGBT device 400 is reduced to a normal level, so that the IGBT device 400 is firstly and secondly subjected to soft start and normal conduction, the conduction loss of the IGBT device 400 is reduced, and the continuous low-power heating work of electromagnetic heating equipment can be realized.
As shown in fig. 11, according to an embodiment of the present invention, the control circuit 100, the driving circuit 200, the enabling sub-circuit 320, and the voltage dropping sub-circuit 330 are integrally packaged, and after the integration, a control chip may be formed, so as to reduce the system volume.
According to a third aspect of the present invention, there is provided an electromagnetic heating apparatus.
The electromagnetic heating device includes the IGBT soft-start control circuit of the second aspect, and the specific structure of the IGBT soft-start control circuit refers to the above-described embodiments, and since the electromagnetic heating device adopts all technical solutions of all the above-described embodiments, at least all beneficial effects brought by the technical solutions of the above-described embodiments are achieved, and details are not repeated here.
The above description is only for the specific embodiments of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art can easily conceive of the changes or substitutions within the technical scope of the present invention, and all the changes or substitutions should be covered within the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.

Claims (13)

1. A soft start control method of an IGBT is characterized by comprising the following steps:
acquiring the collector voltage of the IGBT device;
when the voltage of the collector electrode of the IGBT device is greater than a first voltage threshold value, a first driving signal is provided for the IGBT device at the turn-on stage of the IGBT device, and when the voltage of the collector electrode of the IGBT device is less than a second voltage threshold value, a second driving signal is provided for the IGBT device, so that the IGBT device is sequentially subjected to soft start and normal turn-on;
the first voltage threshold is greater than or equal to the second voltage threshold, and the soft-start voltage of the IGBT device corresponding to the first driving signal is smaller than the driving voltage of the IGBT device corresponding to the second driving signal.
2. An IGBT soft start control circuit is characterized by comprising a control circuit, a driving circuit, a feedback circuit, an IGBT device and a resonant circuit;
the control circuit, the drive circuit and the base electrode of the IGBT device are sequentially connected, the collector electrode of the IGBT device is connected with the resonance circuit, one end of the feedback circuit is connected with the collector electrode of the IGBT device, and the other end of the feedback circuit is connected with the control circuit or the drive circuit or the base electrode of the IGBT device;
the control circuit outputs driving voltage to the base electrode of the IGBT device through the driving circuit;
the feedback circuit is used for acquiring the collector voltage of the IGBT device, and when the collector voltage of the IGBT device is greater than a first voltage threshold value, a first driving signal is provided for the IGBT device in the turn-on stage of the IGBT device, and until the collector voltage of the IGBT device is smaller than a second voltage threshold value, a second driving signal is provided for the IGBT device, so that the IGBT device is sequentially subjected to soft start and normal turn-on;
the first voltage threshold is greater than or equal to the second voltage threshold, and the soft-start voltage of the IGBT device corresponding to the first driving signal is smaller than the driving voltage of the IGBT device corresponding to the second driving signal.
3. The IGBT soft start control circuit according to claim 2, wherein the feedback circuit includes a sampling sub-circuit, an enable sub-circuit, and a buck sub-circuit;
and one ends of a collector electrode, a sampling sub-circuit, an enabling sub-circuit and a voltage reduction sub-circuit of the IGBT device are sequentially connected, and the other end of the voltage reduction sub-circuit is connected with a driving circuit or a base electrode of the IGBT device.
4. The IGBT soft start control circuit of claim 3, wherein the sampling sub-circuit comprises a first sampling resistor and a second sampling resistor;
one end of the first sampling resistor is connected with a collector electrode of the IGBT device, the other end of the first sampling resistor and one end of the second sampling resistor are respectively connected with the enabling sub-circuit, and the other end of the second sampling resistor is grounded.
5. The IGBT soft start control circuit of claim 3,
the enabling sub-circuit comprises a first switching tube and a first resistor, wherein a first end of the first switching tube is connected with the voltage reduction sub-circuit, a second end of the first switching tube is grounded, a trigger end of the first switching tube is connected with one end of the first resistor, and the other end of the first resistor is connected with the sampling sub-circuit; or is
The enabling sub-circuit comprises a first switch tube, a first resistor and an operational amplifier, the positive input end of the operational amplifier is connected with the sampling sub-circuit, the negative input end of the operational amplifier is connected with the reference voltage or the output end of the operational amplifier, the output end of the operational amplifier is connected with one end of the first resistor, the other end of the first resistor is connected with the trigger end of the first switch tube, the first end of the first switch tube is connected with the voltage reduction sub-circuit, and the second end of the first switch tube is grounded.
6. The IGBT soft start control circuit of claim 5, characterized in that the first switch tube is a triode or a MOS tube.
7. The IGBT soft start control circuit of claim 3,
the voltage reduction sub-circuit comprises a second resistor, one end of the second resistor is connected with the enabling sub-circuit, and the other end of the second resistor is connected with the base electrode of the driving circuit or the GIBT device; or is
The voltage reduction sub-circuit comprises a voltage stabilizing diode, the anode of the voltage stabilizing diode is connected with the enabling sub-circuit, and the cathode of the voltage stabilizing diode is connected with the base electrode of the driving circuit or the GIBT device.
8. The IGBT soft start control circuit according to claim 2, wherein the feedback circuit includes a sampling sub-circuit, an enable sub-circuit, and a buck sub-circuit;
one end of the collector of the IGBT device, one end of the sampling sub-circuit, one end of the control circuit, one end of the enabling sub-circuit and one end of the voltage reduction sub-circuit are sequentially connected, and the other end of the voltage reduction sub-circuit is connected with the driving circuit or the base electrode of the IGBT device.
9. The IGBT soft start control circuit according to any one of claims 3 or 8, wherein the control circuit, the driving circuit, the enabling sub-circuit and the voltage dropping sub-circuit are integrally packaged.
10. The IGBT soft start control circuit of claim 2, wherein the drive circuit comprises a level shift sub-circuit and a push-pull drive sub-circuit, and the control circuit, the level shift sub-circuit, the push-pull drive sub-circuit and the gate of the IGBT device are connected in sequence.
11. The IGBT soft start control circuit according to claim 10, wherein the level shift sub-circuit comprises a second transistor, a third resistor, a fourth resistor, and a fifth resistor;
direct current voltage is connected to one end of the third resistor and one end of the fifth resistor, the other end of the third resistor and one end of the fourth resistor are connected with the control circuit, the other end of the fourth resistor is connected with a base electrode of the second triode, the other end of the fifth resistor and an input end of the push-pull driving sub-circuit are connected with a collector electrode of the second triode, and an emitting electrode of the second triode is grounded.
12. The IGBT soft start control circuit according to claim 10, wherein the push-pull drive sub-circuit comprises a third transistor, a fourth transistor, a sixth resistor, and a seventh resistor;
the base of the third triode and the base of the fourth triode are connected with the output end of the level conversion sub-circuit, the collector of the third triode is connected with direct current voltage, the emitter of the third triode is connected with the grid of the IGBT device through a sixth resistor and connected with the emitter of the fourth triode through a seventh resistor, the collector of the fourth triode is grounded, the third triode is selected from NPN type triodes, and the fourth triode is selected from PNP type triodes.
13. An electromagnetic heating apparatus, characterized by comprising the IGBT soft-start control circuit according to any one of claims 2 to 12.
CN202210482984.6A 2022-04-29 2022-04-29 IGBT soft start control method and circuit and electromagnetic heating equipment Pending CN114710146A (en)

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CN202210482984.6A CN114710146A (en) 2022-04-29 2022-04-29 IGBT soft start control method and circuit and electromagnetic heating equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202210482984.6A CN114710146A (en) 2022-04-29 2022-04-29 IGBT soft start control method and circuit and electromagnetic heating equipment

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024021265A1 (en) * 2022-07-25 2024-02-01 深圳市鑫汇科股份有限公司 Self-adjusting igbt drive circuit and electromagnetic heating device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024021265A1 (en) * 2022-07-25 2024-02-01 深圳市鑫汇科股份有限公司 Self-adjusting igbt drive circuit and electromagnetic heating device

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