CN114696182A - On-chip integrated wide spectrum frequency domain terahertz system - Google Patents
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Abstract
The invention provides an on-chip integrated broad spectrum frequency domain terahertz system, which comprises: the dual-wavelength tunable laser, the processing module, the lithium niobate modulator, the linear optical waveguide, the transmitting electrode and the receiving electrode are integrated on the same semiconductor material substrate; laser emitted by the dual-wavelength tunable laser sequentially passes through the processing module, the lithium niobate modulator and the linear optical waveguide and then is irradiated on the transmitting antenna and the receiving antenna respectively; the wavelength of the tunable dual-wavelength laser is tuned to replace the optical path difference generated by the delay line, so that the time domain signal of the terahertz wave electric field is obtained, and the coherent detection of the terahertz wave is realized.
Description
Technical Field
The invention belongs to the field of terahertz wave radiation, and particularly relates to an on-chip integrated wide-spectrum frequency domain terahertz system.
Background
The statements in this section merely provide background information related to the present disclosure and may not necessarily constitute prior art.
The terahertz wave is positioned between the infrared wave and the microwave, has strong penetrability, high safety and high spectral resolution compared with other wave bands, and has great application prospect in the fields of safety inspection, biosensing, medical diagnosis, semiconductor device detection, quality control and the like. At present, the most common terahertz time-domain spectroscopy instrument is used, and the femtosecond fiber laser is used as a pumping source and a detection source, so that the terahertz time-domain spectroscopy instrument is large in size, high in cost and low in resolution. Compared with a time-domain terahertz system, the continuous terahertz system based on photon frequency mixing can effectively reduce the complexity and cost of the system.
On the other hand, in the terahertz detection technology, the terahertz detection technology is divided into a thermal effect detector and an electric field effect detector, and pyroelectric detectors such as the tall-rice detector are generally large in size, slow in response speed and not suitable for rapid detection and integration; the terahertz electric field effect comprises electro-optic sampling detection, photoconductive antenna detection and heterodyne detection, and the photoconductive antenna detection is mostly adopted in frequency domain terahertz detection. The transmitting antenna and the receiving antenna exist independently, and are both provided with independent optical alignment systems, which is not beneficial to miniaturization and integration.
In a continuous terahertz system based on photon mixing, an output signal of a photoconductive antenna is related to the phase difference between terahertz waves and laser optical beats at a detection antenna. Detecting that the magnitude of a terahertz amplitude is related to phase difference, and a phase modulation device is required to be added to a terahertz system based on photon mixing; for example, the optical fiber delay device can realize coherent detection of terahertz by changing the optical path difference, so that the detection time cost and the size of the device are greatly increased, and the development of low cost and miniaturization is not facilitated.
Disclosure of Invention
In order to solve the problems, the invention provides an on-chip integrated broadband spectrum frequency domain terahertz system, which integrates a plurality of optical devices on the same substrate, adopts an on-chip integrated optical transmission arrangement mode, integrates a transmitting antenna and a receiving antenna on the same substrate, combines the wavelength adjusting function of a tunable semiconductor laser, greatly reduces the volume of the terahertz system and realizes the rapid scanning technology of the terahertz broadband spectrum.
According to some embodiments, the invention adopts the following technical scheme:
an on-chip integrated broad spectrum frequency domain terahertz system, comprising:
the dual-wavelength tunable laser, the processing module, the lithium niobate modulator, the linear optical waveguide, the transmitting electrode and the receiving electrode are integrated on the same semiconductor material substrate;
laser emitted by the dual-wavelength tunable laser sequentially passes through the processing module, the lithium niobate modulator and the linear optical waveguide and then is irradiated on the transmitting antenna and the receiving antenna respectively;
the wavelength of the tunable dual-wavelength laser is tuned to replace the optical path difference generated by the delay line, so that a time domain signal of a terahertz wave electric field is obtained, and the coherent detection of terahertz waves is realized.
Compared with the prior art, the invention has the beneficial effects that:
the on-chip integrated broad spectrum frequency domain terahertz system provided by the invention adopts a plurality of optical devices integrated on the same substrate; compared with the traditional terahertz frequency domain spectrum radiation source, the system has the advantages that the volume is greatly reduced, the cost is greatly reduced, the terahertz frequency domain radiation source is developed towards the direction of miniaturization and low cost along with the gradual maturity of a silicon-based integration technology, and the terahertz frequency domain radiation source is widely applied.
The invention provides a dual-wavelength tunable semiconductor laser, which integrates a DFB fixed-frequency laser and a tunable laser on a chip together, and couples the generated laser in an MMI or MEMS mode.
The invention provides an on-chip integrated wide-spectrum frequency domain terahertz system, which integrates a dual-wavelength tunable single-frequency semiconductor laser, a coupler, a modulator with a 1 x 2MZI structure, a lithium niobate optical waveguide, a terahertz transmitting antenna and a terahertz receiving antenna in the same substrate, so that the volume of the terahertz system is greatly reduced, and the stability of the terahertz system is improved.
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The accompanying drawings, which are incorporated in and constitute a part of this specification, are included to provide a further understanding of the invention, and are incorporated in and constitute a part of this specification, illustrate exemplary embodiments of the invention and together with the description serve to explain the invention and not to limit the invention.
Fig. 1 is a structural diagram of a terahertz frequency domain system based on an MMI DFB tunable laser according to an embodiment of the present invention;
FIG. 2 is a structural diagram of a terahertz frequency domain system based on a MEMS DFB tunable laser according to an embodiment of the present invention;
FIG. 3 is a structural diagram of a terahertz frequency domain system based on a silicon photonic chip external cavity narrow linewidth semiconductor laser according to an embodiment of the present invention;
FIG. 4 is a structural diagram of a terahertz frequency domain system based on a four-section DBR tunable semiconductor laser according to an embodiment of the present invention;
FIG. 5 is a block diagram of a VCSEL-based terahertz frequency domain system according to an embodiment of the present invention;
in the figure: 1. the tunable laser comprises a single-wavelength DFB semiconductor laser, 2. a tunable DFB semiconductor laser, 3. a multi-wavelength interference coupler (MMI), 4. a Semiconductor Optical Amplifier (SOA), 5. a lithium niobate modulator, 6. a linear optical waveguide, 7. an emitting electrode, 8. a receiving electrode, 9. a GaAs or InGaAs substrate, 10. an MEMS tilting mirror, 11. a focusing mirror, 12. a silicon photonic chip external cavity narrow-linewidth semiconductor laser (SPC-SL), 13. a four-section DBR tunable semiconductor laser, 14. a tunable Vertical Cavity Surface Emitting Laser (VCSEL) and 15. a dual-wavelength tunable laser.
Detailed Description
The invention is further described with reference to the following figures and examples.
It is to be understood that the following detailed description is exemplary and is intended to provide further explanation of the invention as claimed. Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs.
It is noted that the terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of exemplary embodiments according to the invention. As used herein, the singular is intended to include the plural unless the context clearly dictates otherwise, and it should be understood that when the term "comprising" is used in this specification it indicates the presence of the feature, step, operation, device, component and/or combination thereof.
In the present invention, terms such as "connected" and the like are to be understood in a broad sense and mean either fixedly connected or integrally connected or detachably connected; may be directly connected or indirectly connected through an intermediate. The specific meanings of the above terms in the present invention can be determined according to specific situations by persons skilled in the art, and should not be construed as limiting the present invention.
As described in the background art, the terahertz time-domain spectrometer is large in size and high in cost due to the fact that the femtosecond fiber laser is used as the pumping source and the detection source. Compared with a pulse terahertz wave system, the continuous terahertz system based on photon frequency mixing effectively reduces the complexity and cost of the system.
Through analysis of published documents, patents and products related to the technology at home and abroad, the problems of large volume and high cost of the conventional terahertz radiation system based on photon mixing are mainly found. The terahertz radiation system structure based on photon mixing mainly adopts a DFB tunable laser and a DFB fixed frequency laser as pumping and detection light sources of the terahertz radiation system, the two lasers are combined through a coupler and then split and respectively irradiate on a transmitting end and a detecting end of a photoconductive antenna, and terahertz waves are subjected to coherent detection through tuning an optical delay line.
In a terahertz radiation system based on photon frequency mixing, no matter a tunable laser, a fixed frequency laser, a laser coupler, a laser transmission waveguide and a photoconductive antenna (transmitting and receiving) can be integrated on a chip, and the embodiment provides an on-chip integrated broad spectrum frequency domain terahertz system aiming at the problems of large volume and high cost in the terahertz radiation system based on photon frequency mixing.
An on-chip integrated broadband spectrum frequency domain terahertz system comprises a semiconductor material substrate, a dual-wavelength tunable laser 15, a multi-wavelength interference coupler (MMI)3, a Semiconductor Optical Amplifier (SOA)4, a lithium niobate modulator 5, a transmitting antenna 7 for generating terahertz and a receiving antenna 8 for detecting terahertz, wherein the photoconductive antenna for generating and detecting terahertz is integrated on the same substrate 9, the dual-wavelength tunable laser 15, the Semiconductor Optical Amplifier (SOA)4, the multi-mode interference coupler (MMI)3, an MEMS inclined reflector 10, a focusing mirror 11, the lithium niobate modulator 5, a linear optical waveguide 6 and a substrate 9 can be integrated on the semiconductor substrate, the dual-wavelength tunable laser 15 performs optical power amplification through the Semiconductor Optical Amplifier (SOA)4, the lithium niobate modulator 5 is connected with the Semiconductor Optical Amplifier (SOA)4 through a waveguide, the split laser is transmitted through a linear optical waveguide 6 and respectively irradiates a transmitting antenna 7 and a receiving antenna 8, and a transmitting electrode and a receiving electrode of the antennas are integrated on the same substrate 9; the wide-spectrum terahertz frequency domain system utilizes the frequency sweep of the tunable laser to realize wide-spectrum terahertz output, and the wavelength width of the tunable laser and the responsivity of the photoconductive antenna determine the terahertz spectrum range.
For the process of realizing terahertz radiation by photon mixing, the response of the photoconductive antenna is limited by the carrier life of a substrate material (low-temperature GaAs or InGaAs) and cannot respond to sum frequency and frequency multiplication components of light waves, so that the effective instantaneous light intensity I radiated by the photoconductive antennav(t) is
In the formula of omega1For outputting frequency, omega, of constant-frequency lasers2For tunable laser output frequency, ω ═ ω2-ω1Is the frequency, V, of the terahertz wave radiated by the systembIs bias voltage on the photoconductive antenna, g is electrode spacing of the photoconductive antenna, and η 1 and η 2 are light beams respectively transmitted to the photoconductive antennaRectification generates direct current and photon beat frequency generates coefficients related to terahertz waves.
The terahertz detection process of the photoconductive antenna is the reverse process of the radiation process. The current signal obtained on the photoconductive antenna is proportional to the electric field intensity of the incident terahertz wave, and can be expressed as
In the formula (I), the compound is shown in the specification,
indicating the amplitude of the terahertz electric field,
in order to detect the relative phase difference between the light and the terahertz wave, Δ L is an optical path difference, which is different from other pumping-detection processes, in this embodiment, a time domain signal of a terahertz wave electric field can be obtained by tuning the wavelength of the tunable laser instead of the optical path difference generated by the delay line, so as to implement coherent detection of the terahertz wave.
The dual-wavelength tunable laser 15 is composed of a single-wavelength DFB laser 1 and a tunable laser, and the tunable laser refers to a wavelength tunable semiconductor laser, such as an array-integrated DFB tunable semiconductor laser 2, a silicon photonic chip external cavity narrow linewidth semiconductor laser (SPC-SL)12, a four-section DBR tunable semiconductor laser 13, and a tunable Vertical Cavity Surface Emitting Laser (VCSEL) 14.
The coupling mode of the array integrated DFB tunable semiconductor laser 2 comprises coupling of a multi-wavelength interference coupler (MMI)3 and an MEMS inclined reflector 10; the MEMS tilting mirror 10 requires the use of a focusing mirror 11 for beam expansion and focusing.
The silicon photonic chip external cavity narrow linewidth semiconductor laser (SPC-SL)12, the four-section DBR tunable semiconductor laser 13 and the tunable Vertical Cavity Surface Emitting Laser (VCSEL)14 are coupled by adopting a multi-wavelength interference coupler (MMI).
The Semiconductor Optical Amplifier (SOA)4 can amplify signal optical power, and can control the working wavelength of the integrated device by controlling the current injected into the SOA, so that the monochromaticity of signals is improved.
The lithium niobate modulator 5 is a switch unit with a 1 × 2 Mach-Zehnder interference (MZI) structure, and consists of a Y-shaped waveguide beam splitter, upper and lower parallel waveguide interference arms and a 3dB directional coupler.
The linear optical waveguide 6 and the lithium niobate modulator 5 are made of the same material and both adopt SOI chips; the optical waveguides have the same width and are manufactured by adopting the annealed proton exchange lithium niobate waveguide through the steps of substrate cleaning, mask preparation, photoetching, proton exchange, annealing, end surface polishing, waveguide adjustment and inspection.
The transmitting antenna 7 and the receiving antenna 8 are both butterfly antennas with interdigital electrode structures, and the substrate 9 is made of low-temperature GaAs or InGaAs.
As shown in fig. 1, which is a schematic diagram of a structure of a terahertz frequency domain system based on an MMI DFB tunable laser, a single-wavelength DFB semiconductor laser 1 outputs linearly polarized continuous laser with a wavelength of 1550.06nm, a line width is less than 100MHz, a tunable DFB semiconductor laser 2 outputs linearly polarized continuous laser with a wavelength ranging from 1526nm to 1550nm, and a line width is less than 100 MHz. The array laser is combined through a multimode interference coupler 3(MMI), the optical power is amplified to 60mW through a Semiconductor Optical Amplifier (SOA)4 after the combination, the amplified optical power is input into a lithium niobate modulator 5 with a 1 x 2MZI structure, the laser is split through tuning of bias voltage of the lithium niobate modulator 5, and the power reaches 50: 50 beams are split, the split laser enters the lithium niobate linear optical waveguide 6 respectively, the laser output from the waveguide irradiates the transmitting antenna 7 and the receiving antenna 8 respectively, the transmitting antenna 7 radiates broad spectrum terahertz, and the receiving antenna 8 receives the radiated terahertz, so that the terahertz radiation system integrating the radiation and the detection system is realized.
As shown in fig. 2, which is a schematic structural diagram of a terahertz frequency domain system based on an MEMS DFB tunable laser, laser output by an array-integrated DFB tunable semiconductor laser 2 passes through a focusing mirror 11 and an MEMS tilt mirror 10 to be expanded and focused, then passes through a semiconductor optical amplifier 4 to be amplified, and enters a lithium niobate modulator 5, and is subjected to beam splitting by tuning of bias voltage of the lithium niobate modulator 5, the split laser respectively enters a linear optical waveguide 6, the laser output from the linear optical waveguide 6 respectively irradiates an emitting antenna 7 and a receiving antenna 8, the emitting antenna 7 radiates broad spectrum terahertz, and the receiving antenna 8 receives the radiated terahertz.
As shown in fig. 3, which is a schematic diagram of a structure of a thz frequency domain system based on a silicon photonic chip external cavity narrow linewidth semiconductor laser, laser output by a silicon photonic chip external cavity narrow linewidth semiconductor laser (SPC-SL)12 is combined by a multi-wavelength interference coupler 3, amplified by a semiconductor optical amplifier 4, enters a lithium niobate modulator 5, is subjected to beam splitting by tuning a bias voltage of the lithium niobate modulator 5, the split laser respectively enters a linear optical waveguide 6, the laser output from the linear optical waveguide 6 respectively irradiates a transmitting antenna 7 and a receiving antenna 8, the transmitting antenna 7 radiates broad spectrum thz, and the receiving antenna 8 receives the radiated thz.
Fig. 4 is a schematic diagram of a terahertz frequency domain system based on a four-segment DBR tunable semiconductor laser, in which laser output by a four-segment DBR tunable semiconductor laser 13 is combined by a multi-wavelength interference coupler 3, amplified by a semiconductor optical amplifier 4 and then enters a lithium niobate modulator 5, laser splitting is performed by tuning the bias voltage of the lithium niobate modulator 5, the split laser respectively enters a linear optical waveguide 6, the laser output from the linear optical waveguide 6 respectively irradiates an emitting antenna 7 and a receiving antenna 8, the emitting antenna 7 radiates broad spectrum terahertz, and the receiving antenna 8 receives the radiated terahertz.
Fig. 5 is a schematic diagram of a structure of a terahertz frequency domain system based on a VCSEL, in which laser output from a tunable Vertical Cavity Surface Emitting Laser (VCSEL)14 is combined by a multi-wavelength interference coupler 3, amplified by a semiconductor optical amplifier 4, and then enters a lithium niobate modulator 5, and laser beam splitting is performed by tuning a bias voltage of the lithium niobate modulator 5, the split laser respectively enters a linear optical waveguide 6, the laser output from the linear optical waveguide 6 is respectively irradiated onto an emitting antenna 7 and a receiving antenna 8, the emitting antenna 7 radiates a broad spectrum terahertz, and the receiving antenna 8 receives the radiated terahertz.
A plurality of optical devices are integrated on the structure of the same substrate, the transmitting antenna 7 and the receiving antenna 8 are integrated on the same substrate, and the wavelength adjusting function of the tunable semiconductor laser is combined, so that the size of a terahertz system is greatly reduced, and the terahertz broad spectrum fast scanning technology is realized.
In the embodiment, low-temperature GaAs or InGaAs is used as a substrate of the transmitting and receiving antenna, a semiconductor material is used as a base of the system, the lithium niobate modulator is used as a coupling device of laser, and the lithium niobate waveguide is used for transmitting the laser, so that the technology is mature, and the laser can be applied to practical engineering application.
The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (10)
1. An on-chip integrated broad spectrum frequency domain terahertz system, comprising:
the dual-wavelength tunable laser, the processing module, the lithium niobate modulator, the linear optical waveguide, the transmitting electrode and the receiving electrode are integrated on the same semiconductor material substrate;
laser emitted by the dual-wavelength tunable laser sequentially passes through the processing module, the lithium niobate modulator and the linear optical waveguide and then is irradiated on the transmitting antenna and the receiving antenna respectively;
the wavelength of the tunable dual-wavelength laser is tuned to replace the optical path difference generated by the delay line, so that a time domain signal of a terahertz wave electric field is obtained, and the coherent detection of terahertz waves is realized.
2. The on-chip integrated broad spectrum frequency domain terahertz system of claim 1, wherein the transmitting electrode and receiving electrode are integrated on the same substrate.
3. The on-chip integrated broad spectrum frequency domain terahertz system of claim 1, wherein the processing module comprises a multi-wavelength interference coupler and a semiconductor optical amplifier; alternatively, the processing module comprises a semiconductor optical amplifier.
4. The on-chip integrated broad spectrum frequency domain terahertz system of claim 1, wherein the dual wavelength tunable laser comprises: the laser comprises a single-wavelength DFB semiconductor laser and a tunable laser which are integrated on the same chip.
5. The on-chip integrated broad spectrum frequency domain terahertz system of claim 4, wherein the tunable laser comprises: the laser comprises an array integrated DFB tunable semiconductor laser, a silicon photonic chip external cavity narrow linewidth semiconductor laser, a four-section DBR tunable semiconductor laser and a tunable vertical cavity surface emitting laser.
6. The on-chip integrated broadband spectral frequency domain terahertz system of claim 5, wherein if the tunable laser is an array-integrated DFB tunable semiconductor laser, the processing module is a multi-wavelength interference coupler and a semiconductor optical amplifier;
laser output by the DFB tunable semiconductor laser integrated in the array is converged by the multi-wavelength interference coupler, amplified by the semiconductor optical amplifier and enters the lithium niobate modulator, the laser is split by tuning the bias voltage of the lithium niobate modulator, the split laser respectively enters the linear optical waveguides, the laser output from the linear optical waveguides respectively irradiates the transmitting antenna and the receiving antenna, the transmitting antenna radiates broad-spectrum terahertz, and the receiving antenna receives the radiated terahertz.
7. The on-chip integrated broadband spectral frequency domain terahertz system of claim 5, wherein if the tunable laser is an array-integrated DFB tunable semiconductor laser, the processing module is a semiconductor optical amplifier;
laser output by the DFB tunable semiconductor laser integrated in the array is expanded and focused through a focusing mirror and an MEMS inclined reflector, then enters a lithium niobate modulator after being amplified through a semiconductor optical amplifier, beam splitting is carried out through tuning of bias voltage of the lithium niobate modulator, the split laser respectively enters linear optical waveguides, the laser output from the linear optical waveguides respectively irradiates a transmitting antenna and a receiving antenna, the transmitting antenna radiates broad-spectrum terahertz, and the receiving antenna receives the radiated terahertz.
8. The on-chip integrated broad-spectrum frequency domain terahertz system as claimed in claim 5, wherein if the tunable laser employs a silicon photonic chip external cavity narrow linewidth semiconductor laser, the processing module employs a multi-wavelength interference coupler and a semiconductor optical amplifier;
laser output by a silicon photonic chip external cavity narrow linewidth semiconductor laser is combined through a multi-wavelength interference coupler and then enters a lithium niobate modulator after being amplified through a semiconductor optical amplifier, the laser is split through tuning of bias voltage of the lithium niobate modulator, the split laser respectively enters a linear type optical waveguide, the laser output from the linear type optical waveguide respectively irradiates a transmitting antenna and a receiving antenna, the transmitting antenna radiates broad spectrum terahertz, and the receiving antenna receives the radiated terahertz.
9. The on-chip integrated wide-spectrum frequency-domain terahertz system of claim 5, wherein if the tunable laser employs a four-segment DBR tunable semiconductor laser, the processing module employs a multi-wavelength interference coupler and a semiconductor optical amplifier;
laser output by the four-section DBR tunable semiconductor laser is combined through the multi-wavelength interference coupler and then enters the lithium niobate modulator after being amplified through the semiconductor optical amplifier, the beam splitting of the laser is carried out through the tuning of bias voltage of the lithium niobate modulator, the split laser respectively enters the linear optical waveguides, the laser output from the linear optical waveguides respectively irradiates the transmitting antenna and the receiving antenna, the transmitting antenna radiates wide-spectrum terahertz, and the receiving antenna receives the radiated terahertz.
10. The on-chip integrated broad spectrum frequency domain terahertz system of claim 5, wherein if the tunable laser is a tunable vertical cavity surface emitting laser, the processing module is a multi-wavelength interference coupler and a semiconductor optical amplifier;
laser output by the tunable vertical cavity surface emitting laser is combined by the multi-wavelength interference coupler, amplified by the semiconductor optical amplifier and enters the lithium niobate modulator, the laser is split by tuning the bias voltage of the lithium niobate modulator, the split laser respectively enters the linear optical waveguides, the laser output from the linear optical waveguides respectively irradiates the transmitting antenna and the receiving antenna, the transmitting antenna radiates broad spectrum terahertz, and the receiving antenna receives the radiated terahertz.
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| JP2012098264A (en) * | 2010-10-29 | 2012-05-24 | Emcore Corp | Spectrometer for terahertz frequency domain for shifting frequency of light source laser beam |
| CN105680320A (en) * | 2016-03-16 | 2016-06-15 | 中国科学院长春光学精密机械与物理研究所 | High-power, tunable and narrow linewidth external cavity semiconductor laser |
| CN209745811U (en) * | 2018-11-30 | 2019-12-06 | 深圳市华讯方舟太赫兹科技有限公司 | Broadband tunable terahertz detection device |
| CN110459956A (en) * | 2019-08-23 | 2019-11-15 | 中兴光电子技术有限公司 | A kind of narrow line width regulatable laser |
| US20210066876A1 (en) * | 2019-08-29 | 2021-03-04 | Muhammad Ali Ummy | Fiber-based continuous optical beat laser source to generate terahertz waves using lithium niobate crystal embedded in the fiber |
| CN112968340A (en) * | 2021-02-05 | 2021-06-15 | 浙江大学 | Terahertz source monolithic photonic integrated chip based on parallel double-tunable laser |
| CN113437627A (en) * | 2021-06-07 | 2021-09-24 | 中国科学院上海光学精密机械研究所 | Tunable multi-wavelength multiplexing spectrum modulation and separation system for high-power optical fiber laser amplification |
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