CN114695063A

CN114695063A - Reaction chamber and semiconductor processing equipment

Info

Publication number: CN114695063A
Application number: CN202210257183.XA
Authority: CN
Inventors: 王伟; 庄岩; 周清军; 彭宇霖
Original assignee: Beijing Naura Microelectronics Equipment Co Ltd
Current assignee: Beijing Naura Microelectronics Equipment Co Ltd
Priority date: 2022-03-16
Filing date: 2022-03-16
Publication date: 2022-07-01

Abstract

The application discloses reaction chamber and semiconductor process equipment, reaction chamber includes cavity, inside lining, base and earthing device, wherein: the lining, the base and the grounding device are all arranged in the cavity; the grounding device is an annular conductive structural part and is arranged in a telescopic mode along the axial direction of the annular conductive structural part, the first end of the grounding device is electrically connected with the bottom surface of the lining, the second end of the grounding device is electrically connected with the base, and the base is grounded. The scheme can improve the grounding performance of the lining in the reaction chamber.

Description

Reaction chamber and semiconductor processing equipment

Technical Field

The application relates to the technical field of semiconductor manufacturing, in particular to a reaction chamber and semiconductor process equipment.

Background

In semiconductor manufacturing, it is necessary to apply a plasma etching process. The plasma etching process is a technique of forming plasma including various active particles by means of glow discharge, and forming and removing volatile gaseous products by contacting and reacting the surface of a wafer to be etched with the active particles, thereby completing pattern transfer. In order to prevent the inner wall of the cavity from being etched by the plasma, a liner is required to be arranged in the cavity, and the liner can improve the flow field of the plasma in the cavity and can play a role in shielding the plasma.

Since the grounding performance of the liner may affect the distribution limitation and shielding effect of the liner on the plasma, the related art adopts a grounding means on the upper side of the liner to improve the grounding performance of the liner. However, this structure layout results in a large potential difference between the upper and lower sides of the liner, which causes instability of the rf loop, and thus weakens the confinement of the liner to the plasma. It can be seen that the related art reaction chamber still has the problem of poor grounding performance of the liner.

Disclosure of Invention

The application discloses a reaction chamber and semiconductor process equipment, which are used for improving the grounding performance of a lining in the reaction chamber.

In order to solve the above problems, the following technical solutions are adopted in the present application:

in a first aspect, the present application provides a reaction chamber for a semiconductor processing apparatus, the reaction chamber comprising a chamber body, a liner, a susceptor, and a grounding device, wherein:

the lining, the base and the grounding device are all arranged in the cavity;

the grounding device is an annular conductive structural part and is arranged in a telescopic mode along the axial direction of the annular conductive structural part, the first end of the grounding device is electrically connected with the bottom surface of the lining, the second end of the grounding device is electrically connected with the base, and the base is grounded.

In a second aspect, the present application provides a semiconductor processing apparatus comprising a reaction chamber according to the first aspect of the present application.

The technical scheme adopted by the application can achieve the following beneficial effects:

in the reaction chamber disclosed in the application, the inner liner can be grounded through the grounding device to realize simultaneous grounding of the upper side and the lower side of the inner liner, so that the larger potential difference between the upper side and the lower side of the inner liner is prevented, and the distribution uniformity of the voltage on the inner liner can be effectively improved. Meanwhile, because the grounding device is an annular structural member, the first end of the grounding device can form an annular electric connection path with the bottom surface of the lining along the axial direction of the grounding device, and compared with the modes of single-point grounding, unilateral grounding and the like, the grounding device can provide a more balanced grounding effect undoubtedly so as to further improve the distribution uniformity of voltage on the lining.

The grounding device can effectively ensure the uniform voltage distribution of the liner, thereby ensuring that the radio frequency loop is kept stable and optimizing the confinement shielding effect of the liner on plasma. Therefore, the lining in the reaction chamber has good grounding performance.

Drawings

The accompanying drawings, which are included to provide a further understanding of the application and are incorporated in and constitute a part of this application, illustrate embodiment(s) of the application and together with the description serve to explain the application and not to limit the application. In the drawings:

FIG. 1 is a schematic structural diagram of a reaction chamber disclosed in an embodiment of the present application;

FIG. 2 is a schematic diagram of a liner grounding system according to an embodiment of the present disclosure;

FIG. 3 is a schematic view of a liner and a cavity according to an embodiment of the present disclosure;

fig. 4 is a schematic structural diagram of a grounding device disclosed in an embodiment of the present application;

FIG. 5 is a top view of a reaction chamber disclosed in an embodiment of the present application;

fig. 6 is a schematic structural diagram of a grounding device and a cavity disclosed in the embodiment of the present application;

FIG. 7 is a cross-sectional view of a grounding device disclosed in an embodiment of the present application;

fig. 8 is a schematic structural diagram of another reaction chamber disclosed in the embodiments of the present application.

Description of reference numerals:

100-cavity body,

200-inner liner, 210-first annular clamping groove,

300-ground means, 310-first flange, 320-annular elastic member, 330-second flange,

G1-the first mounting groove, G2-the second mounting groove,

400-base, 410-annular bearing platform, 411-second annular clamping groove,

S1-containing space, S2-process space, R1-first sealing element, R2-second sealing element, C-good conductor element, F1-first fastening element and F2-second fastening element.

Detailed Description

In order to make the objects, technical solutions and advantages of the present application more apparent, the technical solutions of the present application will be described in detail and completely with reference to the following specific embodiments of the present application and the accompanying drawings. It should be apparent that the described embodiments are only some of the embodiments of the present application, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.

Technical solutions disclosed in the embodiments of the present application are described in detail below with reference to the accompanying drawings.

In order to solve the technical problem that the grounding performance of the liner in the reaction chamber is poor, the embodiment of the application provides the reaction chamber which is applied to semiconductor processing equipment.

Referring to fig. 1 to 8, a reaction chamber disclosed in an embodiment of the present invention includes a chamber body 100, a liner 200, a susceptor 400, and a grounding device 300.

The chamber 100 is a basic member of the reaction chamber, and can provide a mounting base for other members. Specifically, the liner 200, the pedestal 400, and the grounding device 300 are all disposed within the chamber 100.

The liner 200 may cover a portion of the inner wall of the chamber 100 to serve as a confinement shield for the plasma, thereby preventing the inner wall of the chamber 100 from being etched by the plasma.

The liner 200 and the chamber 100 define a receiving space S1 therebetween, and the grounding device 300 may be disposed in the receiving space S1. An exhaust mechanism of the reaction chamber may be connected to the receiving space S1 to exhaust the waste gas and the byproducts through the receiving space S1.

The base 400 is disposed in the accommodating space S1, an avoiding region is disposed in the middle of the liner 200, and the top of the base 400 is disposed in the avoiding region for supporting and fixing a wafer to be processed. The top of the base 400 is typically provided with an electrostatic chuck.

The grounding device 300 is a grounding functional component of the reaction chamber, which is used for grounding on the lower side of the liner 200, and in combination with the grounding layout on the upper side of the liner 200, grounding on the upper and lower sides of the liner 200 is realized, as shown in fig. 2. Under the condition, because the upper side and the lower side of the lining 200 are both grounded, the electric potentials of the upper side and the lower side tend to be equal, and no electric potential difference exists, the effect of improving the distribution uniformity of the voltage on the lining 200 can be achieved.

In the related art, the grounding scheme of the liner 200 is single-point or single-side grounding, which results in a large potential difference between a grounding area and a non-grounding area, and if the lower side of the liner 200 is also single-point or single-side grounding, although the problem of potential difference existing on the upper side and the lower side of the liner 200 can be solved, the problem of potential difference between different grounding areas on the same side of the liner 200 is also caused, thereby it is difficult to effectively improve the grounding performance of the liner 200.

In the embodiment of the present application, the grounding device 300 is an annular conductive structure and is telescopically arranged along the axial direction thereof, in the axial direction of the grounding device 300, a first end of the grounding device 300 is electrically connected with the bottom surface of the liner 200, a second end of the grounding device 300 is electrically connected with the pedestal 400, and the pedestal 400 is grounded.

With such a structure layout, the grounding device 300 can be circumferentially disposed along the base 400 to ensure that no structural interference is generated between the grounding device 300 and the base 400, and the base 400 serves as a mounting base for the grounding device 300, which can provide a more reliable supporting function, thereby providing a stable and reliable supporting function for the liner 200.

Further, the grounding device 300 forms a closed loop structure, and after the first end of the grounding device 300 is electrically connected to the bottom surface of the liner 200, the grounding device 300 and the bottom surface of the liner 200 can form a ring-shaped electrical connection path, thereby effectively expanding the grounding area under the liner 200. In this case, since the annular areas connected to the bottom surface of the liner 200 by the grounding device 300 are grounded, and the potentials of the annular connection areas tend to be equal, the effect of preventing the potential difference from occurring in a larger range on the bottom surface of the liner 200 can be achieved, and compared with the scheme of achieving the grounding of the lower side of the liner 200 through single-point or single-side grounding in the related art, the grounding device 300 in the embodiment of the present application can improve the potential difference between different areas on the liner 200, which is equivalent to providing a more balanced grounding effect, thereby further improving the distribution uniformity of the voltage on the liner 200.

In combination with the structural layout of grounding the upper and lower sides of the liner 200, the grounding device 300 of the embodiment of the present application can ensure that the liner 200 not only avoids the occurrence of potential differences between the upper and lower sides, but also avoids the occurrence of potential differences between different regions, so as to effectively enhance the voltage distribution uniformity on the liner 200 compared with the related art, thereby ensuring that the rf loop is kept stable, and optimizing the plasma confinement shielding effect of the liner 200. It can be seen that the liner 200 of the reaction chamber of the present application has good grounding performance.

In addition, the grounding device 300 with an annular structure plays an annular supporting role for the bottom of the liner 200, and compared with a scheme that single-point or single-side grounding is adopted to carry out single-side supporting, the grounding device 300 not only increases the supporting area of the liner 200, but also can avoid the problem of easy fatigue damage caused by too concentrated stress and single-side supporting.

Alternatively, as shown in fig. 5 (the hatched filling area in fig. 5 is the grounding device 300), the grounding device 300 of the embodiment of the present application may be disposed coaxially with the liner 200. With this arrangement, the axis of the grounding device 300 is substantially collinear with the axis of the liner 200, i.e., the grounding device 300 and the liner 200 have a high concentricity, so that the grounding areas on the bottom surface of the liner 200 are distributed uniformly around the axis of the liner 200, thereby ensuring a more uniform grounding effect on the bottom surface of the liner 200 and improving the grounding performance.

It should be noted that, the embodiment of the present application does not limit the specific annular shape of the grounding device 300, and as shown in fig. 4, the grounding device 300 may be an annular structural member, and of course, the grounding device may also be an annular structural member having a square shape, a diamond shape, and the like.

In the present embodiment, the grounding device 300 may be of various types, for example, the grounding device 300 may be an integrally formed annular sleeve and has conductivity, so as to connect with the bottom surface of the liner 200 for grounding.

As shown in fig. 3, the upper edge of the liner 200 is provided with a flange, and the liner 200 is overlapped on the top of the cavity 100 by the flange. In order to ensure the sealing performance of the liner 200 and the cavity 100, a first sealing member R1 is disposed between the flange of the liner 200 and the cavity 100. Since the reaction chamber needs to be evacuated from the process space S2 during the process, the reaction chamber is switched between the atmospheric state and the negative pressure state. After the reaction chamber is vacuumized, the interior of the reaction chamber is in a negative pressure state, the liner 200 can compress the first sealing element R1 to move downwards, and in a specific application scenario, the liner 200 can move downwards by 2 mm; when the reaction chamber is at atmospheric pressure, the liner 200 moves upward, and the first seal R1 rebounds, and in a specific application scenario, the liner 200 may move upward by 2 mm.

In view of the above problems, the grounding device 300 according to the embodiment of the present invention is telescopically arranged along the axial direction thereof, that is, the grounding device 300 is a flexible structure, so that when the liner 200 moves downward, the grounding device 300 can be elastically deformed to avoid rigid contact with the liner 200, that is, the grounding device 300 and the liner 200 are in flexible contact, thereby preventing the liner 200 from being deformed and damaged due to compression. It should be appreciated that with this arrangement, the grounding device 300 can absorb the deformation of the liner 200 and the first sealing element R1, and also can absorb other processing and installation errors, thereby improving the grounding performance of the liner 200 and preventing the liner 200 from being damaged due to the deformation.

Of course, the embodiments of the present disclosure do not limit the application scenario of the reaction chamber, and as long as the liner 200 is displaced up and down, the grounding device 300 may be configured to be retractable along the axial direction thereof, so as to prevent the liner 200 from being damaged.

In a specific embodiment of the grounding device 300, as shown in fig. 1 and fig. 4 to fig. 6, the grounding device 300 of the embodiment of the present application may include a first flange 310, an annular elastic member 320, and a second flange 330, which are coaxially disposed and all electrically conductive, wherein the annular elastic member 320 is disposed between the first flange 310 and the second flange 330; the top surface of the first flange 310 is electrically connected to the bottom surface of the liner 200, both ends of the annular elastic member 320 are respectively connected to the bottom surface of the first flange 310 and the top surface of the second flange 330, and the second flange 330 is electrically connected to the base 400.

With this arrangement, the first flange 310, the annular elastic member 320 and the second flange 330 have good concentricity, so that the annular structure of the grounding device 300 is more regular as a whole, thereby facilitating layout and installation. The first flange 310 may provide a larger area of the top surface thereof to be connected to the liner 200, so as to ensure a stable connection and a reliable electrical connection with the liner 200; the second flange 330 may provide a larger area of connection area to ensure a stable connection for reliable grounding; based on the annular elastic member 320, the grounding device 300 has a flexible feature, and can flexibly support the liner 200 when the liner 200 moves up and down.

Just because the grounding device 300 is an annular structure, it can apply an annular supporting effect to the bottom of the liner 200 through the first flange 310, and compared with the scheme of single-side supporting in the related art (in the case of single-point or single-side grounding), the first flange 310 can effectively increase the supporting area with the bottom surface of the liner 200, so as to improve the stability of the liner 200; secondly, when the grounding device 300 supports the liner 200, the pressure applied to the first flange 310 is uniformly distributed along the circumferential direction, so that the problem of easy fatigue damage caused by too concentrated pressure in a single-side supporting scheme can be avoided, and thus, the grounding device 300 of the embodiment of the present application can have a longer service life; moreover, when the liner 200 is displaced up and down, the liner 200 may be deflected by the single-side supporting scheme, and even have horizontal displacement, for this reason, the grounding device 300 according to the embodiment of the present invention exerts an annular supporting effect on the bottom of the liner 200, which is equivalent to a supporting effect on the liner 200 by a closed loop, and obviously, the problems of deflection and horizontal displacement in the single-side supporting scheme can be avoided, so as to further improve the stability of the liner 200.

Of course, in the case where the first flange 310 and the second flange 330 provide a larger area of the connection region, they can also provide a larger area of the electrical conduction region, thereby improving the grounding performance.

As shown in fig. 6, the base 400 of the embodiment of the present application may include an annular platform 410 provided at a circumferential side surface thereof, and a bottom surface of the second flange 330 may be electrically connected to a top surface of the annular platform 410. With this configuration, the annular platform 410 can support the entire grounding device 300 at the lower side of the second flange 330, so that the installation reliability of the grounding device 300 can be improved.

Of course, the embodiment of the present application does not limit the specific connection relationship between the second flange 330 and the base 400, and in other embodiments, the second flange 330 may be connected to the circumferential side of the base 400 through the inner side thereof.

In the embodiment of the present application, the top surface of the first flange 310 and the bottom surface of the liner 200, and the bottom surface of the second flange 330 and the top surface of the annular platform 410 may be in a planar contact fit relationship, so as to improve the connection stability, and thus the connection stability and the grounding performance of the liner 200.

In the embodiment of the present application, the number of the ring-shaped elastic members 320 is not limited, and may be one or more. As shown in fig. 1 and 6, the annular elastic members 320 are two in number.

In the embodiment where the annular elastic member 320 is plural, the annular elastic members 320 may be sequentially arranged in the radial direction of the grounding device 300. With this configuration, the annular elastic members 320 may form a plurality of connection areas with the first flange 310 and the second flange 330, respectively, so as to effectively improve the connection stability therebetween, to prevent the components from deflecting, and in particular, to prevent the first flange 310 from deflecting, thereby providing a more stable supporting function for the liner 200.

In an alternative embodiment, as shown in fig. 6, there are two annular elastic members 320, and the two annular elastic members 320 are symmetrically disposed along the vertical central axis of the cross section of the grounding device 300, so that the two annular elastic members 320 can provide a relatively balanced supporting effect for the first flange 310, thereby ensuring that the liner 200 is stably supported.

Further, as shown in fig. 4 and 6, the annular elastic member 320 of the embodiment of the present application is a bellows. The corrugated pipe is formed by connecting foldable corrugated sheets along the folding and stretching direction, and has good flexibility, so that the grounding device 300 can provide good flexible supporting effect for the lining 200, and the lining 200 is prevented from being damaged. Meanwhile, the corrugated pipe includes the foldable corrugated sheets, and the corrugated sheets can better absorb the stretching deformation, so that the annular elastic member 320 of the embodiment of the present application has good fatigue resistance, thereby prolonging the service life of the grounding device 300.

In the embodiment of the present application, the material of the annular elastic member 320 is not limited, for example, stainless steel, Polyvinyl chloride (PVC), rubber, etc.

In another specific embodiment, the annular elastic member 320 of the present embodiment may be a C276 hastelloy structural member. The C276 hastelloy belongs to a nickel-molybdenum-chromium-iron-tungsten series nickel base alloy, has extremely excellent corrosion resistance, and can be used for a long time in a semiconductor process environment; because the corrosion resistance of the C276 Hastelloy is extremely excellent, the surface of the annular elastic member 320 does not need to be coated with an anticorrosive coating, and the problem of chamber pollution caused by coating falling off in the long-term expansion and contraction process is avoided. Meanwhile, the C276 hastelloy has good conductivity, so that the grounding device 300 can realize a stable grounding effect; the coefficient of thermal expansion of C276 hastelloy is low.

The material of the first flange 310 and the second flange 330 may be 316LM stainless steel, which has the advantages of high conductivity, corrosion resistance and high temperature resistance. Of course, the specific material of the first flange 310 and the second flange 330 is not limited in the embodiments of the present application, and the material may also be carbon steel, nickel steel, or the like.

In an alternative, as shown in fig. 1, 6 and 7, at least one of the top surface of the first flange 310 and the bottom surface of the second flange 330 is provided with a first mounting groove G1 extending annularly, and a second sealing member R2 is provided in the first mounting groove G1. It should be understood that, in the embodiment of the present application, both the top surface of the first flange 310 and the bottom surface of the second flange 330 may be provided with the first mounting groove G1, and only one of them may be provided with the first mounting groove G1.

With this arrangement, the second sealing member R2 is used to seal the first mounting groove G1, so as to prevent byproduct particles from entering the communication surface between the first flange 310 and the liner 200.

Further, as shown in fig. 7, the inner side of the first mounting groove G1 may be provided with a second mounting groove G2, the inner groove surface of the second mounting groove G2 is provided with a conductive plating layer, and a good conductor member C is provided in the second mounting groove G2. The conductive coating can be a nickel coating, a silver coating, a copper coating, or the like.

It should be understood that the second mounting groove G2 is also opened on the top surface of the first flange 310 and/or the bottom surface of the second flange 330, and of course, it is necessary to ensure that the second mounting groove G2 is positioned inside the first mounting groove G1 to provide sealing protection for the second mounting groove G2 by the second sealing member R2 in the first mounting groove G1. The inner groove surface of the second mounting groove G2 forms a conduction surface, which can improve the conductivity; meanwhile, the good conductor C is a device having excellent conductivity, and may further improve conductivity, thereby improving the grounding performance of the liner 200.

In the embodiment of the present application, the specific types of the first seal R1 and the second seal R2 are not limited, and may be selected from O-ring, Q-ring, Y-ring, and the like. The specific types of the first mounting groove G1 and the second mounting groove G2 are not limited in the embodiment of the present application, and as shown in fig. 7, the first mounting groove G1 and the second mounting groove G2 are both dovetail grooves, and of course, they may also be trapezoidal grooves, rectangular grooves, and the like. The good conductor C may be an inductive coil or other conductive device made of metal such as copper, silver, etc.

In embodiments where the grounding device 300 is connected to the base 400 by the second flange 330, as shown in fig. 1, the reaction chamber of the embodiments of the present application may include a plurality of first fasteners F1 and a plurality of second fasteners F2, the first flange 310 is connected to the liner 200 by a plurality of first fasteners F1, and the plurality of first fasteners F1 are uniformly arranged in a ring shape; the second flange 330 is connected to the annular platform 410 by a plurality of second fastening members F2, and the plurality of second fastening members F2 are uniformly arranged in a ring shape.

Under the structural layout, the first flanges 310 and the liner 200 can be connected by the first fasteners F1 along the circumferential direction, so that the grounding device 300 and the liner 200 form a connection matching relationship in annular distribution, the connection area range of the grounding device and the liner can be effectively enlarged, the stress balance of the liner 200 can be improved, and the connection stability of the liner 200 can be improved. Similarly, the second flange 330 and the annular platform 410 can be connected by the plurality of second fasteners F2 along the circumferential direction, so that the grounding device 300 and the base 400 form a connection matching relationship distributed annularly, the connection area range of the two can be effectively enlarged, and the connection stability of the liner 200 can be indirectly improved.

In the embodiment of the present application, the specific types of the first fastener F1 and the second fastener F2 are not limited, and may be selected from a threaded fastener (screw, bolt, etc.), a pin, a rivet, and the like. In particular, the first fastener F1 and the second fastener F2 are both vacuum screws to ensure that the process space S2 achieves a vacuum when the reaction chamber is at a process stage.

In embodiments where the grounding device 300 is connected to the annular platform 410 via the second flange 330, as shown in fig. 8, the bottom surface of the liner 200 may be provided with a first annular slot 210, the first flange 310 being at least partially mounted within the first annular slot 210; and/or, a top surface of the annular platform 410 may be provided with a second annular groove 411, the second flange 330 being at least partially mounted within the second annular groove 411.

It is to be understood that at least partial means may be partial or complete. In the embodiment of the present application, only one of the first ring slot 210 and the second ring slot 411 may be provided, or both of them may be provided. With such a configuration, the first flange 310 can be quickly positioned and installed in the first ring slot 210, and the second flange 330 can be quickly positioned and installed in the second ring slot 411, so that the installation efficiency of the grounding device 300 can be improved.

Further, the inner groove surfaces of the first ring groove 210 and the second ring groove 411 may be provided with conductive coatings to further improve conductivity, thereby improving the grounding performance of the liner 200.

Based on the foregoing reaction chamber, an embodiment of the present application further provides a semiconductor processing apparatus, which includes the reaction chamber in any of the foregoing schemes, so that the semiconductor processing apparatus has the beneficial effects of any of the foregoing schemes, and details are not repeated herein.

Of course, the embodiment of the present application does not limit the specific type of the semiconductor processing apparatus, and may specifically be an etching apparatus, a plasma immersion ion implantation apparatus, and the like.

In the embodiments of the present application, the difference between the embodiments is described in detail, and different optimization features between the embodiments can be combined to form a better embodiment as long as the differences are not contradictory, and further description is omitted here in view of brevity of the text.

The above description is only an example of the present application and is not intended to limit the present application. Various modifications and changes may occur to those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application should be included in the scope of the claims of the present application.

Claims

1. A reaction chamber applied to semiconductor processing equipment is characterized by comprising a cavity, a lining, a pedestal and a grounding device, wherein:

the lining, the base and the grounding device are all arranged in the cavity;

2. The reaction chamber of claim 1, wherein the grounding device comprises a first flange, an annular elastic member and a second flange which are coaxially arranged and are all conductive, and the annular elastic member is arranged between the first flange and the second flange; the top surface of the first flange is electrically connected with the bottom surface of the lining, the two ends of the annular elastic piece are respectively connected with the bottom surface of the first flange and the top surface of the second flange, the base comprises an annular bearing platform arranged on the circumferential side surface of the base, and the bottom surface of the second flange is electrically connected with the top surface of the annular bearing platform.

3. The reaction chamber as claimed in claim 2, wherein the number of the annular elastic members is plural, and the annular elastic members are sequentially arranged in a radial direction of the grounding means.

4. The reaction chamber of claim 2, wherein the annular elastic member is a bellows.

5. The reaction chamber as claimed in claim 2 wherein the annular spring is a C276 hastelloy structural member.

6. The reaction chamber as claimed in claim 2, wherein at least one of the top surface of the first flange and the bottom surface of the second flange is provided with a first mounting groove extending in an annular shape, and a second sealing member is provided in the first mounting groove.

7. The reaction chamber as claimed in claim 6, wherein a second mounting groove is provided at an inner side of the first mounting groove, an inner groove surface of the second mounting groove is provided with a conductive plating layer, and a good conductor is provided in the second mounting groove.

8. The reaction chamber of claim 2, further comprising a plurality of first fasteners and a plurality of second fasteners, wherein the first flange is connected to the liner by the plurality of first fasteners, and wherein the plurality of first fasteners are uniformly arranged in a ring; the second flange is connected with the annular bearing platform through the second fasteners, and the second fasteners are uniformly distributed in an annular shape.

9. The reaction chamber of claim 2, wherein a bottom surface of the liner is provided with a first annular groove, and the first flange is at least partially mounted in the first annular groove; and/or a second annular clamping groove is formed in the top surface of the annular bearing platform, and the second flange is at least partially arranged in the second annular clamping groove.

10. A semiconductor processing apparatus comprising the reaction chamber of any one of claims 1 to 9.