CN114686955B - Anode assembly, electroplating device and manufacturing method of anode assembly - Google Patents
Anode assembly, electroplating device and manufacturing method of anode assembly Download PDFInfo
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- CN114686955B CN114686955B CN202011599782.7A CN202011599782A CN114686955B CN 114686955 B CN114686955 B CN 114686955B CN 202011599782 A CN202011599782 A CN 202011599782A CN 114686955 B CN114686955 B CN 114686955B
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- 238000009713 electroplating Methods 0.000 title claims abstract description 40
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 17
- 230000004888 barrier function Effects 0.000 claims abstract description 66
- 238000012360 testing method Methods 0.000 claims description 22
- 238000000034 method Methods 0.000 claims description 20
- 238000009413 insulation Methods 0.000 claims description 9
- 230000000149 penetrating effect Effects 0.000 claims description 6
- 239000011810 insulating material Substances 0.000 claims description 3
- 230000000903 blocking effect Effects 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 abstract description 26
- 238000004806 packaging method and process Methods 0.000 abstract description 20
- 230000005684 electric field Effects 0.000 abstract description 12
- 239000002184 metal Substances 0.000 abstract description 10
- 239000010410 layer Substances 0.000 description 47
- 239000000758 substrate Substances 0.000 description 12
- 239000004033 plastic Substances 0.000 description 11
- 230000008569 process Effects 0.000 description 10
- 238000007747 plating Methods 0.000 description 8
- 239000000463 material Substances 0.000 description 6
- 230000009286 beneficial effect Effects 0.000 description 5
- 229910021645 metal ion Inorganic materials 0.000 description 4
- 239000011241 protective layer Substances 0.000 description 4
- 229910000679 solder Inorganic materials 0.000 description 4
- 239000012212 insulator Substances 0.000 description 3
- 238000012858 packaging process Methods 0.000 description 3
- 238000003466 welding Methods 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000001351 cycling effect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000002198 insoluble material Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/10—Electrodes, e.g. composition, counter electrode
- C25D17/12—Shape or form
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
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- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Electroplating Methods And Accessories (AREA)
Abstract
The application discloses an anode assembly, an electroplating device and a manufacturing method of the anode assembly. Wherein the anode assembly comprises an insoluble anode mesh and an insulating barrier; the insoluble anode net comprises a front surface which is used for facing to the to-be-plated piece; at least a portion of the insulating barrier is disposed on the front side of the insoluble anode web. In the arrangement, at least one part of the front surface of the insoluble anode mesh is shielded by the insulating barrier, so that the electric field intensity of the corresponding position is weakened, the corresponding position of the part to be plated cannot obtain excessive metal, the thickness of the corresponding position of the part to be plated can be controlled to a certain extent, the electroplating uniformity is facilitated, and the reliability of the semiconductor packaging structure is facilitated to be ensured.
Description
Technical Field
The present disclosure relates to the field of electroplating packaging, and in particular, to an anode assembly, an electroplating apparatus, and a method for manufacturing the anode assembly.
Background
In the semiconductor packaging process, a rewiring layer is required to be formed on a die to be packaged, which is cut from a wafer, by an electroplating process, so that a welding spot on the die to be packaged is led out outwards, and a pin is formed. However, the current electroplating process cannot achieve electroplating uniformity, in other words, when forming a rewiring layer on a die to be packaged, a surface of the rewiring layer away from the die to be packaged cannot form a flat surface. Because of the limitation of the process, the rewiring layer directly connected with the welding spot of the die to be packaged cannot be ground, and the rewiring layer with uneven surface can influence the formation of a subsequent hierarchical structure, and finally, the reliability of the semiconductor packaging structure is affected.
Disclosure of Invention
The application provides an anode assembly, an electroplating device and a manufacturing method of the anode assembly, which can improve electroplating uniformity.
According to a first aspect of the present application, there is provided an anode assembly comprising:
an insoluble anode web comprising a front face for facing a part to be plated;
an insulating barrier, at least a portion of which is disposed on the front side of the insoluble anode mesh.
Further, through holes penetrating along the thickness direction of the insoluble anode net are formed in the insoluble anode net;
the insulating barrier comprises a shielding part and a positioning part, wherein the positioning part enters the through hole, and the shielding part abuts against the front surface of the insoluble anode mesh.
Further, the insoluble anode net further comprises a back surface, and the back surface and the front surface are oppositely arranged along the thickness direction of the insoluble anode net;
the insulating barrier further comprises a limiting part, the shielding part and the limiting part are respectively connected with two ends of the positioning part, and the limiting part abuts against the back surface of the insoluble anode mesh.
Further, the thickness of the shielding portion gradually decreases in a direction away from the axis of the insulating barrier.
Further, the end surface of the shielding part, which is far away from the positioning part, bulges in a direction far away from the positioning part.
Further, the insoluble anode net is provided with through holes penetrating along the thickness direction of the insoluble anode net, the number of the through holes is a plurality of,
the insulating barrier comprises a shielding part and a clamping part, the shielding part is propped against the front surface, the clamping part is arranged on the periphery of the shielding part, the number of the clamping parts is multiple, and the clamping parts are clamped and arranged on different through holes.
Further, the insulating barrier is switchable between a first position and a second position;
when the insulating barrier is positioned at the first position, the insulating barrier is fixedly connected with the insoluble anode mesh; when the insulating barrier is switched from the first position to the second position or from the second position to the first position, the insulating barrier is elastically deformed; when the insulating barrier is in the second position, the insulating barrier and the insoluble anode mesh are separated.
Further, an insulating material is coated on at least a portion of the front face of the insoluble anode web, and the insulating barrier is formed.
According to a second aspect of the present application, there is provided an electroplating apparatus comprising an electroplating cell and the above-described anode assembly, the anode assembly being disposed in the electroplating cell.
According to a third aspect of the present application, there is provided a manufacturing method of an anode assembly, the manufacturing method being used for manufacturing the anode assembly described above, the manufacturing method comprising:
arranging a test piece to be tested and the insoluble anode net in an electroplating pool;
dividing the test piece to be tested into a plurality of areas to be tested, and testing the thickness of the areas to be tested;
and if the thickness of one area to be tested is larger than the preset thickness, arranging the insulating barrier at the position of the front surface of the insoluble anode net, which faces the testing area.
The technical scheme that this application provided can include following beneficial effect:
through the arrangement, at least one part of the front surface of the insoluble anode mesh is shielded by the insulating barrier, so that the electric field intensity at the corresponding position is weakened, excessive metal can not be obtained at the corresponding position of the part to be plated, the thickness of the corresponding position of the part to be plated can be controlled to a certain extent, electroplating uniformity is facilitated, namely, the surface of a rewiring layer on the part to be plated, which is far away from a die to be packaged, forms a relatively flat surface, and the reliability of a semiconductor packaging structure is facilitated to be ensured.
It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the disclosure.
Drawings
Fig. 1 is a schematic cross-sectional view of a semiconductor package according to an embodiment of the present application.
Fig. 2 is a simplified flow chart of a semiconductor packaging method according to an embodiment of the present application.
Fig. 3 is a schematic plan view of an electroplating apparatus according to an embodiment of the present application.
Fig. 4 is a schematic cross-sectional structure of an anode assembly according to an embodiment of the present application.
Fig. 5 is a schematic cross-sectional structure of an anode assembly according to another embodiment of the present application.
Fig. 6 is a schematic cross-sectional structure of an anode assembly according to still another embodiment of the present application.
Fig. 7 is a method of fabricating an anode assembly according to an embodiment of the present application.
Description of the reference numerals
Semiconductor package structure 10
Die 100 to be packaged
Active face 110
Solder joint 111
Back panel 120
Die 100 to be packaged
Substrate 200
Plastic seal layer 300
Insulating protective layer 400
First opening 410
Rewiring layer 500
Electroplating apparatus 600
Electroplating bath 700
Cathode 800
Anode assembly 900
Insoluble anode mesh 910
Front face 911
Through hole 912
Back side 913
Insulating barrier 920
Shielding portion 921
Positioning portion 922
Limiting part 923
Clamping part 924
Thickness direction H
Detailed Description
Reference will now be made in detail to exemplary embodiments, examples of which are illustrated in the accompanying drawings. When the following description refers to the accompanying drawings, the same numbers in different drawings refer to the same or similar elements, unless otherwise indicated. The manner described in the following exemplary embodiments does not represent all manners consistent with the present application. Rather, they are merely examples of apparatus consistent with some aspects of the present application as detailed in the accompanying claims.
The terminology used in the present application is for the purpose of describing particular embodiments only and is not intended to be limiting of the present application. Unless defined otherwise, technical or scientific terms used herein should be given the ordinary meaning as understood by one of ordinary skill in the art to which this application belongs. The terms "first," "second," and the like in the description and in the claims, are not used for any order, quantity, or importance, but are used for distinguishing between different elements. Also, the terms "a" or "an" and the like do not denote a limitation of quantity, but rather denote the presence of at least one, and the terms "a" and "an" are used individually. "plurality" or "plurality" means two or more. Unless otherwise indicated, the terms "front," "rear," "lower," and/or "upper" and the like are merely for convenience of description and are not limited to one location or one spatial orientation. The word "comprising" or "comprises", and the like, means that elements or items appearing before "comprising" or "comprising" are encompassed by the element or item recited after "comprising" or "comprising" and equivalents thereof, and that other elements or items are not excluded. The terms "connected" or "connected," and the like, are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect. As used in this specification and the appended claims, the singular forms "a," "an," and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It should also be understood that the term "and/or" as used herein refers to and encompasses any or all possible combinations of one or more of the associated listed items.
Embodiments of the present application will be described in detail below with reference to the accompanying drawings. Features of the embodiments described below may be combined with each other without conflict.
As shown in fig. 1, the present application relates to a semiconductor packaging method, which can be used to manufacture a semiconductor packaging structure 10 shown in fig. 1, wherein the semiconductor packaging structure 10 is a chip package.
As shown in fig. 1, the semiconductor packaging method needs to cut a wafer, and a plurality of dies 100 to be packaged are formed after the dicing. Subsequently, the die 100 to be packaged needs to be packaged. The die 100 to be packaged includes an active surface 110 and a back plate surface 120, and a metal solder joint 111 is disposed on the active surface 110. The semiconductor packaging method needs to lead out the welding spots 111 on the active surface 110 to form pins, so that the subsequent parts can be electrically connected.
As shown in fig. 2, the semiconductor packaging method specifically includes at least the following steps:
step 1000-1: the semiconductor wafer is diced and the die 100 to be packaged is formed.
Step 2000-1: a substrate 200 is provided, and the die 100 to be packaged is fixed to the substrate 200.
Step 3000-1: a plastic layer 300 is formed, and the plastic layer 300 encapsulates the die 100 to be packaged and fixedly connects the substrate 200 and the die 100 to be packaged.
Step 4000-1: an insulating protective layer 400 is formed on the active side 110 of the die 100 to be packaged.
Specifically, in one embodiment, the back plane 120 of the die 100 to be packaged may be fixed on the substrate 200, and then the plastic layer 300 is formed, and the plastic layer 300 encapsulates the die 100 to be packaged and the active plane 110 thereof. The plastic layer 300 is then thinned by grinding the plastic layer 300 until the pads 111 on the active side 110 of the die 100 to be packaged are exposed. Finally, an insulating protective layer 400 is formed on the active surface 110.
Of course, in other embodiments, the active surface 110 of the die 100 to be packaged may be fixed on the substrate 200, and then the plastic layer 300 is formed, and the plastic layer 300 wraps the die 100 to be packaged and the back surface 120 thereof. The overall structure is then flipped over so that active face 110 faces upward and substrate 200 attached to active face 110 is removed to expose pads 111 on active face 110. Subsequently, the substrate 200 is fixed to the back plate surface 120. Finally, an insulating protective layer 400 is formed on the active surface 110.
Step 5000-1: a first opening 410 is formed on the insulating protection layer 400, and the first opening 410 exposes the solder joint 111 on the active surface 110 of the die 100 to be packaged. When the material of the insulating protection layer 400 is a photosensitive material, the first opening 410 may be formed by photolithography patterning through mask exposure. In this embodiment, when the material of the insulating protection layer 400 is a material such as epoxy resin that has no photosensitivity, the first opening 410 may be formed above the insulating protection layer 400 by laser drilling.
Of course, in other embodiments, the insulating protection layer 400 may be formed on the semiconductor wafer, and after the first opening 410 is formed thereon, the entire structure may be fixed on the substrate after being switched, and then the plastic layer 300 may be formed.
Step 6000-1: a re-wiring layer 500 is formed on the insulating protection layer 400, and the re-wiring layer 500 is connected to the pad 111 through the first opening 410 to form a structure as shown in fig. 1.
In the present embodiment, the step of forming the re-wiring layer 500 on the insulating protection layer 400 and connecting the re-wiring layer 500 to the pad 111 through the first opening 410 is implemented using an electroplating process. It should be noted that, hereinafter, the whole formed by connecting the substrate 200, the molding layer 300, the die 100 to be packaged, and the insulating protection layer 400 is referred to as a part 20 to be plated.
In the process of forming the rewiring layer 500 on the part to be plated 20 by using the electroplating apparatus 600, once the electroplating uniformity is poor, the surface of the rewiring layer 500 away from the die to be packaged 100 cannot form a flat surface. The uneven rewiring layer 500 may affect the formation of subsequent levels, ultimately affecting the reliability of the semiconductor package 10.
As shown in fig. 3, the present application also discloses a plating apparatus 600, the plating apparatus 600 including a plating cell 700, a cathode 800, and an anode assembly 900. Wherein, the plating bath 700 is loaded with a plating solution rich in metal ions, and the anode assembly 900 and the workpiece 20 to be plated are disposed in the plating bath 700 and immersed in the plating solution. The workpiece 20 is connected to the cathode 800, and the workpiece 20 and the anode assembly 900 are disposed opposite to each other, in other words, the surface of the workpiece 20 provided with the insulating protection layer 400 and the first opening 410 faces the anode assembly 900. When a potential difference exists between the anode assembly 900 and the to-be-plated member 20 and an electric field is formed therebetween, metal ions in the electroplating solution will move in a direction approaching to the to-be-plated member 20 under the action of the electric field and finally deposit on the surface of the to-be-plated member 20, i.e. on the surface of the insulating protection layer 400, and at least a portion of the metal ions will enter the first opening 410 and be electrically connected to the solder joints 111 of the die 100 to be packaged.
In this application, anode assembly 900 includes an insoluble anode mesh 910 and an insulating barrier 920.
In the electroplating process, the electroplating solution is generally a highly corrosive liquid, so that the insoluble anode mesh 910 is made of an insoluble material in order to avoid corrosion of the insoluble anode mesh 910.
As shown in fig. 4, the insoluble anode web 910 includes a front face 911, the front face 911 being adapted to face the article 20 to be plated. So that the to-be-plated member 20 is in the electric field, and the metal ions in the electroplating solution move towards the direction close to the to-be-plated member 20 under the action of the electric field, and are finally deposited on the surface of the to-be-plated member 20, i.e. on the surface of the insulating protection layer 400, so as to form the rewiring layer 500.
The insulating barrier 920 is at least partially disposed on the front face 911 of the insoluble anode mesh 910. To attenuate the electric field generated between the area of the insoluble anode mesh 910 and the cathode 800, reducing or avoiding excessive amounts of metal obtained from at least a portion of the part 20 to be plated disposed opposite the area.
In the above arrangement, at least a portion of the front surface 911 of the insoluble anode mesh 910 is shielded by the insulating barrier 920, so as to reduce the electric field intensity at the corresponding position, so that the corresponding position of the part to be plated 20 cannot obtain excessive metal, and the thickness at the corresponding position of the part to be plated 20 can be controlled to a certain extent, which is beneficial to realizing electroplating uniformity, i.e. forming a relatively flat surface on the surface of the rewiring layer 500 on the part to be plated 20, which is far away from the die 100 to be packaged, and is beneficial to ensuring the reliability of the semiconductor packaging structure 10.
Further, the insoluble anode net 910 is provided with a through hole 912 penetrating in the thickness direction H of the insoluble anode net 910. The insulating barrier 920 includes a shielding portion 921 and a positioning portion 922, the positioning portion 922 entering the through hole 912, the shielding portion 921 abutting against the front face 911 of the insoluble anode mesh 910.
Through the arrangement, the shielding part 921 can shield at least a part of the front surface 911 of the insoluble anode mesh 910, so as to weaken the electric field intensity of the corresponding position, so that the corresponding position of the member to be plated 20 cannot obtain excessive metal, the thickness of the corresponding position of the member to be plated 20 can be controlled to a certain extent, the electroplating uniformity is facilitated, and the reliability of the semiconductor packaging structure 10 is facilitated to be ensured. The positioning portion 922 is arranged in the through hole 912 in a penetrating way, and the positioning portion 922 and the shielding portion 921 are matched to ensure the stable connection between the insulating barrier 920 and the insoluble anode mesh 910. In the present embodiment, the number of through holes 912 is plural.
Further, the insoluble anode web 910 further includes a back surface 913, and the back surface 913 and the front surface 911 are disposed opposite to each other in the thickness direction H of the insoluble anode web 910. The insulating barrier 920 further includes a limiting portion 923, the shielding portion 921 and the limiting portion 923 are connected to both ends of the positioning portion 922, respectively, and the limiting portion 923 abuts against the back surface 913 of the insoluble anode mesh 910. The shielding part 921, the positioning part 922 and the limiting part 923 are matched, so that the movement of the insulating barrier 920 along the axial direction and the radial direction of the through hole 912 can be effectively limited, the stable connection of the insulating barrier 920 and the insoluble anode net 910 is further ensured, namely, the precise control of the area shielding the insoluble anode net 910 is ensured, a proper amount of metal can be precisely obtained at each position of the workpiece 20 to be plated, the thickness of the corresponding position of the workpiece 20 to be plated can be controlled to a certain extent, the electroplating uniformity is facilitated, and the reliability of the semiconductor packaging structure 10 is facilitated to be ensured.
As shown in fig. 4, in an embodiment, the thickness of the shield 921 gradually decreases in a direction away from the axis of the insulating barrier 920. In this embodiment, the shielding insulator is composed of an elastically deformable material. By the arrangement, the insulation barrier 920 is favorably deformed greatly by pressing the insulation barrier 920, so that the insulation barrier 920 fixed on the insoluble anode mesh 910 is favorably pulled out from the through holes 912, and the separation of the insoluble anode mesh 910 and the insulation barrier 920 is realized; it is also advantageous to pass the insulating barrier 920, which is separated from the insoluble anode mesh 910, into the through hole 912 to achieve a fixed connection of the insoluble anode mesh 910 and the insulating barrier 920.
Further, the shielding portion 921 has the same shape as the stopper portion 923. Through the arrangement, the user does not need to distinguish positive aspects in the process of fixing the insulation barrier 920 to the insoluble anode mesh 910, which is beneficial to improving the operation convenience. At the same time, it is also advantageous to fix or separate the insulating barrier 920 from the insoluble anode mesh 910.
In this embodiment, an end surface of the shielding portion remote from the positioning portion bulges in a direction remote from the positioning portion. Through above-mentioned setting, be favorable to strengthening shelter from the intensity of portion, avoid shelter from the portion from the positive break away from of insoluble anode net, also can avoid shelter from the portion and shelter from the positive of insoluble anode net can't be accurate because the deformation that the thickness is too little, intensity is too little and cause.
As shown in fig. 5, of course, in other embodiments, the thickness of the shielding portion 921 and the limiting portion 923 may be the same in a direction away from the axis of the insulating barrier 920 to enhance the stability of positioning. At this time, the insulation barrier 920 is in an "H" shape.
In another embodiment, as illustrated in fig. 6, the insulation barrier 920 includes a blocking portion 921 and a detent portion 924. The shielding portion 921 abuts against the front face 911, the latching portions 924 are provided on the peripheral side of the shielding portion 921, the number of latching portions 924 is plural, and the plurality of latching portions 924 are latched to different through holes 912. With the above arrangement, the plurality of latching portions 924 are disposed through the plurality of through holes 912, so as to achieve a fixed connection to the shielding portion 921. At this time, the entire shielding portion 921 can shield the front surface 911 of the insoluble anode mesh 910.
In this embodiment, the shielding insulator is composed of an elastically deformable material, as indicated above. The insulating barrier 920 may be switched between a first position and a second position. When the insulating barrier 920 is located at the first position, the insulating barrier 920 is fixedly connected with the insoluble anode mesh 910, so as to shield at least a portion of the front surface 911 of the insoluble anode mesh 910, thereby realizing weakening of the electric field strength at the corresponding position, so that the corresponding position of the part to be plated 20 cannot obtain excessive metal, and further the thickness of the corresponding position of the part to be plated 20 can be controlled to a certain extent, which is beneficial to realizing electroplating uniformity and ensuring the reliability of the semiconductor packaging structure 10. When the insulating barrier 920 is switched from the first position to the second position, or from the second position to the first position, the insulating barrier 920 is elastically deformed; when the insulating barrier is in the second position, the insulating barrier 920 and the insoluble anode mesh 910 are separated. The user can adjust the number and position distribution of the shielding insulators fixed on the insoluble anode net 910 in time according to the test result in the early test stage.
In other embodiments, the front face 911 of the insoluble anode mesh 910 may be shielded from the deformation by providing a deformable insulating barrier 920. For example, the insulating barrier 920 may be formed by coating an insulating material on at least a portion of the front surface 911 of the insoluble anode web 910. The insulating barrier 920 formed by coating can also shield at least a portion of the front surface 911 of the insoluble anode mesh 910 to weaken the electric field intensity at the corresponding position, so that the corresponding position of the workpiece 20 to be plated cannot obtain excessive metal, the thickness of the corresponding position of the workpiece 20 to be plated can be controlled to a certain extent, the electroplating uniformity is facilitated, and the reliability of the semiconductor packaging structure 10 is facilitated to be ensured.
The application also discloses a manufacturing method of the anode assembly 900, which is used for manufacturing the anode assembly 900. It is generally desirable to fabricate the anode assembly 900 described above prior to performing the packaging process on the die 100 to be packaged, and in particular, prior to using the electroplating process to form the rewiring layer 500 on the insulating protection layer 400.
As shown in fig. 7, and referring to fig. 1 and 3 as necessary, the manufacturing method includes the following steps.
Step 1000-2: a test piece to be tested and an insoluble anode mesh 910 are disposed in the plating cell 700.
It should be noted that, the to-be-plated piece 20 formed by the substrate 200, the die 100 to be packaged, the plastic sealing layer 300 and the insulating protection layer 400 may be selected as a test piece to be tested, so as to ensure that the test piece is the same as or similar to the to-be-plated piece 20 in the electroplating process of the semiconductor packaging method. However, the part to be plated 20, as a test piece to be tested, cannot undergo the semiconductor packaging process after undergoing the manufacturing method of the anode assembly 900. After the test piece to be tested is subjected to the above steps, a rewiring layer 500 is formed on the surface thereof facing the insoluble anode mesh 910. Of course, in other embodiments, other structures may be utilized as test pieces to be tested.
Step 2000-2: dividing the test piece to be tested into a plurality of areas to be tested, and testing the thickness of the areas to be tested.
In this step, the user may manually measure the thickness of the area to be tested, or may use other electronic equipment to perform automated measurements.
Step 3000-2: if the thickness of the area to be tested is greater than the preset thickness, an insulation barrier 920 is disposed on the front surface 911 of the insoluble anode mesh 910 at a position facing the test area.
In this step, the number and position of the insulating barriers 920 may be manually adjusted by the user, or may be automatically adjusted by other electronic devices. It should be noted that the above adjustment includes adjusting parameters such as the number and the position of the insulating stoppers 920.
Through the above test, the electric field at the position of the designated area to be tested can be weakened, so that the thickness of the rewiring layer 500 formed in the corresponding area of the subsequent test piece to be tested or the workpiece to be plated 20 is prevented from being too thick. The positions and numbers of the insulating barriers 920 fixed on the insoluble anode net 910 can be continuously adjusted by cycling from the step 1000-2 to the step 3000-2, so as to ensure that the thickness of each position on the test piece to be tested is the same, i.e. to ensure that the surface of the rewiring layer 500 far from the substrate 200 and the die 100 to be packaged is a flat surface. When the semiconductor packaging structure 10 undergoes the electroplating process in the semiconductor packaging method, the anode assembly 900 is utilized to perform electroplating on the rewiring layer 500 on the piece to be plated 20, so that a proper amount of metal can be obtained at each position of the piece to be plated 20, the thickness of each position of the piece to be plated 20 can be controlled, electroplating uniformity can be realized, that is, a relatively flat surface of the rewiring layer 500 on the piece to be plated 20, which is far away from the die to be packaged 100, can be realized, and reliability of the semiconductor packaging structure 10 can be guaranteed.
The foregoing description is only a preferred embodiment of the present application, and is not intended to limit the invention to the particular embodiment disclosed, but is not intended to limit the invention to the particular embodiment disclosed, as the equivalent of some alterations or modifications can be made without departing from the scope of the present application.
Claims (9)
1. An anode assembly, the anode assembly comprising:
an insoluble anode web comprising a front face for facing a part to be plated;
an insulating barrier, at least a portion of which is disposed on the front side of the insoluble anode mesh;
the insoluble anode net is provided with a through hole penetrating along the thickness direction of the insoluble anode net;
the insulation blocking piece comprises a shielding part and a positioning part, the positioning part enters the through hole, and the shielding part abuts against the front surface of the insoluble anode mesh;
the position of the insulating barrier may be adjusted.
2. The anode assembly of claim 1, wherein said insoluble anode web further comprises a back surface, said back surface and said front surface being disposed opposite each other in a thickness direction of said insoluble anode web;
the insulating barrier further comprises a limiting part, the shielding part and the limiting part are respectively connected with two ends of the positioning part, and the limiting part abuts against the back surface of the insoluble anode mesh.
3. The anode assembly of claim 1, wherein the thickness of the shield portion is tapered in a direction away from the axis of the insulating barrier.
4. The anode assembly of claim 1, wherein an end of the shielding portion remote from the positioning portion bulges away from the positioning portion.
5. The anode assembly according to claim 1, wherein the insoluble anode mesh is provided with a plurality of through holes penetrating in a thickness direction of the insoluble anode mesh,
the insulating barrier comprises a shielding part and a clamping part, the shielding part is propped against the front surface, the clamping part is arranged on the periphery of the shielding part, the number of the clamping parts is multiple, and the clamping parts are clamped and arranged on different through holes.
6. The anode assembly of any of claims 2-5, wherein the insulating barrier is switchable between a first position and a second position;
when the insulating barrier is positioned at the first position, the insulating barrier is fixedly connected with the insoluble anode mesh; when the insulating barrier is switched from the first position to the second position or from the second position to the first position, the insulating barrier is elastically deformed; when the insulating barrier is in the second position, the insulating barrier and the insoluble anode mesh are separated.
7. The anode assembly of claim 1, wherein at least a portion of the front face of said insoluble anode web is coated with an insulating material and forms said insulating barrier.
8. An electroplating apparatus comprising an anode assembly according to any one of claims 1 to 7 and an electroplating cell, the anode assembly being disposed in the electroplating cell.
9. A method of manufacturing an anode assembly, wherein the method is used to manufacture an anode assembly according to any one of claims 1-7, the method comprising:
arranging a test piece to be tested and the insoluble anode net in an electroplating pool;
dividing the test piece to be tested into a plurality of areas to be tested, and testing the thickness of the areas to be tested;
and if the thickness of one area to be tested is larger than the preset thickness, arranging the insulating barrier at the position of the front surface of the insoluble anode net, which faces the testing area.
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| JPH09291396A (en) * | 1996-04-24 | 1997-11-11 | Kawasaki Steel Corp | Vertical electroplating device and chromium electroplating method |
| CN201424518Y (en) * | 2009-03-10 | 2010-03-17 | 深圳大学反光材料厂 | Electroplating device |
| CN102011162A (en) * | 2010-09-29 | 2011-04-13 | 苏州创峰光电科技有限公司 | Method and device for electroplating sheets |
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| JP2017014540A (en) * | 2015-06-26 | 2017-01-19 | 住友金属鉱山株式会社 | Insoluble anode, plating device, electroplating method and method for producing copper-clad laminated plate |
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| JPH09291396A (en) * | 1996-04-24 | 1997-11-11 | Kawasaki Steel Corp | Vertical electroplating device and chromium electroplating method |
| CN201424518Y (en) * | 2009-03-10 | 2010-03-17 | 深圳大学反光材料厂 | Electroplating device |
| CN102011162A (en) * | 2010-09-29 | 2011-04-13 | 苏州创峰光电科技有限公司 | Method and device for electroplating sheets |
| CN102560586A (en) * | 2012-02-08 | 2012-07-11 | 南通富士通微电子股份有限公司 | Electroplating method |
| JP2017014540A (en) * | 2015-06-26 | 2017-01-19 | 住友金属鉱山株式会社 | Insoluble anode, plating device, electroplating method and method for producing copper-clad laminated plate |
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