CN114683660A - High-temperature-resistant solar photovoltaic back plate - Google Patents

High-temperature-resistant solar photovoltaic back plate Download PDF

Info

Publication number
CN114683660A
CN114683660A CN202210619728.7A CN202210619728A CN114683660A CN 114683660 A CN114683660 A CN 114683660A CN 202210619728 A CN202210619728 A CN 202210619728A CN 114683660 A CN114683660 A CN 114683660A
Authority
CN
China
Prior art keywords
temperature
montmorillonite
solar photovoltaic
photovoltaic back
intermediate layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN202210619728.7A
Other languages
Chinese (zh)
Other versions
CN114683660B (en
Inventor
古小花
何梦龙
李学忠
胡世杰
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Jiangsu Fuming Solar Energy Co ltd
Original Assignee
Jiangsu Fuming Solar Energy Co ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jiangsu Fuming Solar Energy Co ltd filed Critical Jiangsu Fuming Solar Energy Co ltd
Priority to CN202210619728.7A priority Critical patent/CN114683660B/en
Publication of CN114683660A publication Critical patent/CN114683660A/en
Application granted granted Critical
Publication of CN114683660B publication Critical patent/CN114683660B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00—Layered products comprising a layer of synthetic resin
    • B32B27/36—Layered products comprising a layer of synthetic resin comprising polyesters
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C48/00—Extrusion moulding, i.e. expressing the moulding material through a die or nozzle which imparts the desired form; Apparatus therefor
    • B29C48/03—Extrusion moulding, i.e. expressing the moulding material through a die or nozzle which imparts the desired form; Apparatus therefor characterised by the shape of the extruded material at extrusion
    • B29C48/07—Flat, e.g. panels
    • B29C48/08—Flat, e.g. panels flexible, e.g. films
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C71/00—After-treatment of articles without altering their shape; Apparatus therefor
    • B29C71/04—After-treatment of articles without altering their shape; Apparatus therefor by wave energy or particle radiation, e.g. for curing or vulcanising preformed articles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00—Layered products comprising a layer of synthetic resin
    • B32B27/06—Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • B32B27/08—Layered products comprising a layer of synthetic resin as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00—Layered products comprising a layer of synthetic resin
    • B32B27/18—Layered products comprising a layer of synthetic resin characterised by the use of special additives
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00—Layered products comprising a layer of synthetic resin
    • B32B27/30—Layered products comprising a layer of synthetic resin comprising vinyl (co)polymers; comprising acrylic (co)polymers
    • B32B27/304—Layered products comprising a layer of synthetic resin comprising vinyl (co)polymers; comprising acrylic (co)polymers comprising vinyl halide (co)polymers, e.g. PVC, PVDC, PVF, PVDF
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B33/00—Layered products characterised by particular properties or particular surface features, e.g. particular surface coatings; Layered products designed for particular purposes not covered by another single class
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/34—Silicon-containing compounds
    • C08K3/346—Clay
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K9/00—Use of pretreated ingredients
    • C08K9/08—Ingredients agglomerated by treatment with a binding agent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/048—Encapsulation of modules
    • H01L31/0481—Encapsulation of modules characterised by the composition of the encapsulation material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/048—Encapsulation of modules
    • H01L31/049—Protective back sheets
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2255/00—Coating on the layer surface
    • B32B2255/10—Coating on the layer surface on synthetic resin layer or on natural or synthetic rubber layer
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2255/00—Coating on the layer surface
    • B32B2255/24—Organic non-macromolecular coating
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2307/00—Properties of the layers or laminate
    • B32B2307/30—Properties of the layers or laminate having particular thermal properties
    • B32B2307/306—Resistant to heat
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2307/00—Properties of the layers or laminate
    • B32B2307/50—Properties of the layers or laminate having particular mechanical properties
    • B32B2307/54—Yield strength; Tensile strength
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2307/00—Properties of the layers or laminate
    • B32B2307/50—Properties of the layers or laminate having particular mechanical properties
    • B32B2307/546—Flexural strength; Flexion stiffness
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2307/00—Properties of the layers or laminate
    • B32B2307/50—Properties of the layers or laminate having particular mechanical properties
    • B32B2307/558—Impact strength, toughness
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00—Electrical equipment
    • B32B2457/12—Photovoltaic modules
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K2201/00—Specific properties of additives
    • C08K2201/011—Nanostructured additives
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Dispersion Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Photovoltaic Devices (AREA)
  • Compositions Of Macromolecular Compounds (AREA)

Abstract

The invention discloses a high-temperature-resistant solar photovoltaic back plate, which comprises an intermediate layer and protective layers attached to two sides of the intermediate layer, wherein the intermediate layer is made of a montmorillonite/polyethylene glycol terephthalate compound, and the protective layers are made of polyvinylidene fluoride; the montmorillonite/polyethylene glycol terephthalate compound is obtained by melting and blending polyethylene glycol terephthalate and dispersion-treated montmorillonite and then performing injection molding. The invention discloses a preparation method of the high-temperature-resistant solar photovoltaic back plate, which comprises the steps of drying polyethylene glycol terephthalate, mixing with montmorillonite subjected to dispersion treatment, melting and blending, extruding, drying, and performing injection molding to obtain an intermediate layer; performing oxygen plasma bombardment on two sides of the middle layer to obtain a pretreated middle layer; spraying a 3-aminopropyl triethoxysilane solution on the surface of the pretreated intermediate layer to obtain a pre-sprayed intermediate layer; and attaching polyvinylidene fluoride films to two sides of the pre-sprayed middle layer, carrying out pressure heat treatment, and cooling to room temperature to obtain the high-temperature-resistant solar photovoltaic back plate.

Description

High-temperature-resistant solar photovoltaic back plate
Technical Field
The invention relates to the technical field of photovoltaic back plates, in particular to a high-temperature-resistant solar photovoltaic back plate and a preparation method thereof.
Background
The solar cell panel mainly comprises solar PV glass, an EVA (ethylene vinyl acetate) environment-friendly film, a solar cell module, a photovoltaic backboard and a junction box, wherein the photovoltaic backboard is in large-area contact with the external environment of the photovoltaic module as a key photovoltaic packaging material of the solar cell panel, so that the performance of the photovoltaic module is kept to be very important under severe environments such as moist heat, dry heat, strong ultraviolet rays and the like, and the long-term operation reliability of the photovoltaic module is also very important.
The conventional solar back plate is formed by compounding multiple layers of materials, the most common compound KPE back plate in the market is taken as an example, the structure of the conventional solar back plate is three layers, the outermost layer (back plate air contact surface) is a polyvinylidene fluoride (PDVF) layer and a polyethylene terephthalate (PET) middle layer, a polyethylene terephthalate film is mainly used for an electric insulating material and is matched with the polyvinylidene fluoride layer, and the polyvinylidene fluoride layer and the PDVF layer are combined by an adhesive to form the photovoltaic back plate which is used for protecting a solar cell panel from being corroded by severe environment.
At present, the performance of the photovoltaic back plate is insufficient, the photovoltaic back plate is easy to suffer from challenges of partial discharge, electrical aging and the like under working environments such as high humidity, high strength and sunshine and the like, so that the insulating performance and the mechanical performance of the photovoltaic back plate are damaged, and the performance of the photovoltaic back plate is closely related to the safety of a photovoltaic cell. Therefore, the insulating property and the mechanical property of the photovoltaic back plate must be improved, and the research has important significance for prolonging the service life of the solar cell panel.
Disclosure of Invention
The invention aims to solve the defects in the prior art and provides a high-temperature-resistant solar photovoltaic back plate and a preparation method thereof.
A high-temperature resistant solar photovoltaic back plate comprises a middle layer and protective layers attached to two sides of the middle layer, wherein the middle layer is made of a montmorillonite/polyethylene glycol terephthalate compound, and the protective layers are made of polyvinylidene fluoride; the montmorillonite/polyethylene glycol terephthalate compound is obtained by melting and blending polyethylene glycol terephthalate and dispersion-treated montmorillonite and then performing injection molding.
Preferably, the montmorillonite for dispersion treatment is obtained by intercalating caprolactam on the nano montmorillonite and grafting polyamide-amine between the nano montmorillonite layers.
Preferably, the dispersion-treated montmorillonite is prepared by the following specific steps: adding nano montmorillonite and polyamide-amine into water, stirring, adding caprolactam, continuously stirring, adding phosphate and acetic acid under the protection of nitrogen, carrying out hydrothermal reaction for 1-2h at 70-80 ℃, heating to 180-200 ℃, continuously reacting for 1-2h, maintaining the pressure at 1.2-2MPa in the hydrothermal reaction process, recovering to normal pressure, vacuumizing for 1-2h at 210-220 ℃, cooling to room temperature, and crushing to obtain the dispersion-treated montmorillonite.
The invention adopts dendritic macromolecular polyamide-amine to modify nano-montmorillonite, firstly, caprolactam is utilized to insert layers in the nano-montmorillonite and hydrolyze the nano-montmorillonite, and then the dendritic macromolecular polyamide-amine is grafted and grown between the nano-montmorillonite layers to form a hyperbranched matrix, thereby realizing the full stripping and chemical bonding of the nano-montmorillonite.
Preferably, the mass ratio of the nano montmorillonite to the polyamide-amine to the caprolactam to the phosphate to the acetic acid is 5-10: 1-2: 1-4: 0.1-0.5: 1-2.
The preparation method of the high-temperature-resistant solar photovoltaic back plate comprises the following steps:
s1, drying the polyethylene terephthalate, mixing the dried polyethylene terephthalate with the montmorillonite subjected to dispersion treatment, adding the mixture into a torque rheometer preheated to 120 ℃ and 140 ℃, and performing melt blending, extrusion, drying and injection molding to obtain an intermediate layer;
s2, performing oxygen plasma bombardment on two sides of the middle layer, charging oxygen gas in the bombardment process until the pressure of a vacuum chamber is 0.01-0.05Pa, discharging the electrode under pressure, wherein the bombardment current is 60-80mA, and the bombardment time is 30-50min to obtain a pretreated middle layer;
s3, spraying a 3-aminopropyl triethoxysilane solution on the surface of the pretreated intermediate layer to obtain a pre-sprayed intermediate layer; and attaching polyvinylidene fluoride films to two sides of the pre-sprayed middle layer, carrying out pressure heat treatment, and cooling to room temperature to obtain the high-temperature-resistant solar photovoltaic back plate.
Preferably, in S1, the mass ratio of the polyethylene terephthalate to the dispersion-treated montmorillonite is 50-100: 1-5.
Preferably, in S1, the drying temperature is 70-80 ℃.
Preferably, the volume fraction of the 3-aminopropyltriethoxysilane solution in S3 is 1.5-2%, and the spraying amount is 1.5-2g/cm2。
Preferably, in S3, the pH value of the 3-aminopropyltriethoxysilane solution is 3-4.
Preferably, in S3, the pressurizing heat treatment time is 5-10min, the pressurizing pressure is 1.2-2MPa, and the heat treatment temperature is 80-120 ℃.
The technical effects of the invention are as follows:
the invention adopts the blending and melting of the dispersion processed montmorillonite and the polyethylene glycol terephthalate, and the dispersion processed montmorillonite contains a large amount of hyperbranched structures and has high compatibility with the polyethylene glycol terephthalate, so that the dispersion processed montmorillonite can effectively improve the crystallization performance of the polyethylene glycol terephthalate when dispersed in the polyethylene glycol terephthalate, and the interaction between the dispersion processed montmorillonite and polyethylene glycol terephthalate chains can be enhanced by the structure of the hyperbranched molecular chains on the dispersion processed montmorillonite, and the ultra-large specific surface area of the dispersion processed montmorillonite plays a role of a crosslinking point on the polyethylene glycol terephthalate molecular chains.
When the product is stretched by an external force, the molecular chains are oriented along the stretching direction, and the molecular chains slide, so that the tensile strength and the elongation at break of the product are synchronously increased; when the montmorillonite is impacted by external force, the lamellar structure of the montmorillonite and the hyperbranched structure in the montmorillonite can well transmit and bear the external force, so that the impact strength of the product is obviously improved.
Meanwhile, the nano-montmorillonite is fully dispersed in the system, the nano-sheet layer effectively plays a role in blocking, the thermal decomposition temperature of the material can be effectively increased in the thermal decomposition process, and the thermal stability of the product is excellent. When current flows through the middle layer, the nanosheet layer montmorillonite with the large specific surface area can block the current and induce the discharge channel to develop along the hyperbranched chain structure, so that the discharge distance is effectively increased, the electrode breakdown is delayed, the power frequency breakdown field intensity is increased, good acting force between the polyethylene glycol terephthalate and the montmorillonite subjected to dispersion treatment can effectively restrict the movement of polar groups, the free movement of effective electrons is reduced and the stroke is shortened under the action of an electric field, and the forming difficulty of the internal discharge channel is further enhanced.
The method grafts the 3-aminopropyl triethoxysilane after the oxygen plasma bombardment is carried out on the middle layer, and then the 3-aminopropyl triethoxysilane is hot-pressed with the polyvinylidene fluoride layer, so that the organic combination of the three-layer structure is realized, the operation is simple, and the combination effect is good.
Drawings
Fig. 1 is a graph comparing the breakdown voltages of the high temperature resistant solar photovoltaic back sheets obtained in example 5 and comparative examples 1-2.
Fig. 2 is a graph comparing mechanical properties of the high temperature resistant solar photovoltaic back sheets obtained in example 5 and comparative examples 1-2.
Fig. 3 is a graph comparing the heat distortion temperature of the high temperature resistant solar photovoltaic back sheets obtained in example 5 and comparative examples 1-2.
Detailed Description
The present invention will be further illustrated with reference to the following specific examples.
Example 1
A high temperature resistant solar photovoltaic back panel comprising: the middle layer is made of montmorillonite/polyethylene glycol terephthalate composite, and the protective layer is made of polyvinylidene fluoride.
The preparation method of the high-temperature-resistant solar photovoltaic back plate comprises the following steps:
s1, adding 5kg of nano montmorillonite and 1kg of polyamide-amine into 20kg of water, stirring at a high speed of 1000r/min for 10min, adding 1kg of caprolactam, continuously stirring for 1min, sending into a high-temperature high-pressure reaction kettle, adding 0.1kg of phosphate and 1kg of acetic acid under the protection of nitrogen, reacting for 1h at 70 ℃, heating to 180 ℃ and continuously reacting for 1h, keeping the pressure in the reaction kettle at 1.2MPa in the reaction process, discharging to normal pressure, vacuumizing at 210 ℃ for 1h, cooling to room temperature, and crushing to obtain dispersion-treated montmorillonite;
drying 50kg of polyethylene terephthalate in a drying oven at the temperature of 70 ℃ to remove water, mixing the polyethylene terephthalate with 1kg of dispersion-treated montmorillonite, adding the mixture into a torque rheometer preheated to 120 ℃ for melt blending, wherein the rotating speed of a rotor is 60 r/min; extruding, drying and injection molding to obtain an intermediate layer;
s2, performing oxygen plasma bombardment on two sides of the middle layer, charging oxygen in the bombardment process until the pressure of a vacuum chamber is 0.01Pa, pressurizing and discharging an electrode, wherein the bombardment current is 60mA, and the bombardment time is 30min to obtain a pretreated middle layer;
s3, spraying a 3-aminopropyl triethoxysilane solution (pH = 3-4) with the volume fraction of 1.5% on the surface of the pretreatment intermediate layer, wherein the spraying amount is 1.5g/cm2Obtaining a pre-spraying intermediate layer; attaching polyvinylidene fluoride films to two sides of the pre-sprayed middle layer, carrying out pressurization heat treatment for 5min at the pressurization pressure of 1.2MPa and the heat treatment temperature of 80 ℃, and cooling to room temperature to obtain the high-temperature-resistant solar photovoltaic back plate.
Example 2
A high temperature resistant solar photovoltaic back panel comprising: the middle layer is made of montmorillonite/polyethylene glycol terephthalate composite, and the protective layer is made of polyvinylidene fluoride.
The preparation method of the high-temperature-resistant solar photovoltaic back plate comprises the following steps:
s1, adding 10kg of nano montmorillonite and 2kg of polyamide-amine into 50kg of water, stirring at a high speed of 2000r/min for 20min, adding 4kg of caprolactam, continuously stirring for 5min, sending into a high-temperature high-pressure reaction kettle, adding 0.5kg of phosphate and 2kg of acetic acid under the protection of nitrogen, reacting at 80 ℃ for 2h, heating to 200 ℃ for continuous reaction for 2h, keeping the pressure in the reaction kettle at 2MPa in the reaction process, discharging to normal pressure, vacuumizing at 220 ℃ for 2h, cooling to room temperature, and crushing to obtain dispersion-treated montmorillonite;
drying 100kg of polyethylene terephthalate in a drying oven at the temperature of 80 ℃ to remove moisture, mixing the polyethylene terephthalate with 5kg of dispersion-treated montmorillonite, adding the mixture into a torque rheometer preheated to 140 ℃ for melt blending, wherein the rotating speed of a rotor is 100 r/min; extruding, drying and injection molding to obtain an intermediate layer;
s2, performing oxygen plasma bombardment on two sides of the middle layer, charging oxygen in the bombardment process until the pressure of a vacuum chamber is 0.05Pa, pressurizing and discharging the electrode, wherein the bombardment current is 80mA, and the bombardment time is 50min to obtain a pretreated middle layer;
s3, spraying a 3-aminopropyltriethoxysilane solution (pH = 3-4) with the volume fraction of 2% on the surface of the pretreatment intermediate layer, wherein the spraying amount is 2g/cm2Obtaining a pre-spraying intermediate layer; attaching polyvinylidene fluoride films to two sides of the pre-sprayed middle layer, carrying out pressurization heat treatment for 10min at the pressurization pressure of 2MPa and the heat treatment temperature of 120 ℃, and cooling to room temperature to obtain the high-temperature-resistant solar photovoltaic back plate.
Example 3
A high temperature resistant solar photovoltaic back panel comprising: the middle layer is made of montmorillonite/polyethylene glycol terephthalate composite, and the protective layer is made of polyvinylidene fluoride.
The preparation method of the high-temperature-resistant solar photovoltaic back plate comprises the following steps:
s1, adding 6kg of nano montmorillonite and 1.7kg of polyamide-amine into 30kg of water, stirring at a high speed of 1800r/min for 13min, adding 3kg of caprolactam, continuously stirring for 2min, sending into a high-temperature high-pressure reaction kettle, adding 0.4kg of phosphate and 1.3kg of acetic acid under the protection of nitrogen, reacting at 77 ℃ for 1.3h, heating to 195 ℃ for continuous reaction for 1.3h, keeping the pressure in the reaction kettle at 1.8MPa in the reaction process, discharging to normal pressure, vacuumizing at 212 ℃ for 1.7h, cooling to room temperature, and crushing to obtain dispersion-treated montmorillonite;
drying 70kg of polyethylene terephthalate in a drying oven at the temperature of 77 ℃ to remove moisture, mixing with 2kg of dispersion-treated montmorillonite, adding into a torque rheometer preheated to 135 ℃, and carrying out melt blending, wherein the rotating speed of a rotor is 70 r/min; extruding, drying and injection molding to obtain an intermediate layer;
s2, performing oxygen plasma bombardment on two sides of the middle layer, charging oxygen in the bombardment process until the pressure of a vacuum chamber is 0.04Pa, pressurizing and discharging the electrode, wherein the bombardment current is 65mA, and the bombardment time is 45min to obtain a pretreated middle layer;
s3, spraying a 3-aminopropyl triethoxysilane solution (pH = 3-4) with the volume fraction of 1.6% on the surface of the pretreatment intermediate layer, wherein the spraying amount is 1.9g/cm2Obtaining a pre-spraying intermediate layer; attaching polyvinylidene fluoride films to two sides of the pre-sprayed middle layer, carrying out pressurization heat treatment for 6min at the pressurization pressure of 1.8MPa and the heat treatment temperature of 90 ℃, and cooling to room temperature to obtain the high-temperature-resistant solar photovoltaic back plate.
Example 4
A high temperature resistant solar photovoltaic back panel comprising: the middle layer is made of montmorillonite/polyethylene glycol terephthalate composite, and the protective layer is made of polyvinylidene fluoride.
The preparation method of the high-temperature-resistant solar photovoltaic back plate comprises the following steps:
s1, adding 8kg of nano montmorillonite and 1.3kg of polyamide-amine into 40kg of water, stirring at a high speed of 1200r/min for 17min, adding 2kg of caprolactam, continuously stirring for 4min, sending into a high-temperature high-pressure reaction kettle, adding 0.2kg of phosphate and 1.7kg of acetic acid under the protection of nitrogen, reacting at 73 ℃ for 1.7h, heating to 185 ℃ for continuous reaction for 1.7h, keeping the pressure in the reaction kettle at 1.4MPa in the reaction process, discharging to normal pressure, vacuumizing at 218 ℃ for 1.3h, cooling to room temperature, and crushing to obtain dispersion-treated montmorillonite;
drying 90kg of polyethylene terephthalate in a drying oven at 73 ℃ to remove water, mixing with 4kg of dispersion-treated montmorillonite, adding into a torque rheometer preheated to 125 ℃, and melting and blending at the rotor speed of 90 r/min; extruding, drying and injection molding to obtain an intermediate layer;
s2, performing oxygen plasma bombardment on two sides of the middle layer, charging oxygen in the bombardment process until the pressure of a vacuum chamber is 0.02Pa, pressurizing and discharging the electrode, wherein the bombardment current is 75mA, and the bombardment time is 35min to obtain a pretreated middle layer;
s3, spraying a 3-aminopropyl triethoxysilane solution (pH = 3-4) with the volume fraction of 1.8% on the surface of the pretreatment intermediate layer, wherein the spraying amount is 1.7g/cm2Obtaining a pre-spraying intermediate layer; attaching polyvinylidene fluoride films to two sides of the pre-sprayed middle layer, carrying out pressurization heat treatment for 8min at the pressurization pressure of 1.4MPa and the heat treatment temperature of 110 ℃, and cooling to room temperature to obtain the high-temperature-resistant solar photovoltaic back plate.
Example 5
A high temperature resistant solar photovoltaic backplane comprising: the middle layer is made of montmorillonite/polyethylene glycol terephthalate composite, and the protective layer is made of polyvinylidene fluoride.
The preparation method of the high-temperature-resistant solar photovoltaic back plate comprises the following steps:
s1, adding 7kg of nano montmorillonite and 1.5kg of polyamide-amine into 35kg of water, stirring at a high speed of 1500r/min for 15min, adding 2.5kg of caprolactam, continuing stirring for 3min, sending into a high-temperature high-pressure reaction kettle, adding 0.3kg of phosphate and 1.5kg of acetic acid under the protection of nitrogen, reacting at 75 ℃ for 1.5h, heating to 190 ℃ for continuing reacting for 1.5h, keeping the pressure in the reaction kettle at 1.6MPa in the reaction process, discharging to normal pressure, vacuumizing at 215 ℃ for 1.5h, cooling to room temperature, and crushing to obtain dispersion-treated montmorillonite;
drying 80kg of polyethylene terephthalate in a drying oven at the temperature of 75 ℃ to remove moisture, mixing with 3kg of dispersion-treated montmorillonite, adding into a torque rheometer preheated to 130 ℃ for melt blending, wherein the rotating speed of a rotor is 80 r/min; extruding, drying and injection molding to obtain an intermediate layer with the thickness of 0.1 mm;
s2, performing oxygen plasma bombardment on two sides of the middle layer, charging oxygen in the bombardment process until the pressure of a vacuum chamber is 0.03Pa, pressurizing and discharging the electrode, wherein the bombardment current is 70mA, and the bombardment time is 40min to obtain a pretreated middle layer;
s3, spraying a 3-aminopropyl triethoxysilane solution (pH = 3-4) with the volume fraction of 1.7% on the surface of the pretreatment intermediate layer, wherein the spraying amount is 1.8g/cm2Obtaining a pre-spraying intermediate layer; attaching polyvinylidene fluoride films with the thickness of 20 mu m on two sides of the pre-sprayed middle layer, carrying out pressurization heat treatment for 7min at the pressurization pressure of 1.6MPa and the heat treatment temperature of 100 ℃, and cooling to room temperature to obtain the high-temperature-resistant solar photovoltaic back plate.
Comparative example 1
A high temperature resistant solar photovoltaic back panel comprising: the middle layer is made of polyethylene terephthalate, and the protective layers are made of polyvinylidene fluoride.
The preparation method of the high-temperature-resistant solar photovoltaic back plate comprises the following steps:
s1, drying 83kg of polyethylene terephthalate in a drying oven at the temperature of 75 ℃ to remove moisture, adding the polyethylene terephthalate into a torque rheometer preheated to 130 ℃ for melt blending, wherein the rotating speed of a rotor is 80 r/min; extruding, drying and injection molding to obtain an intermediate layer with the thickness of 0.1 mm;
s2, performing oxygen plasma bombardment on two sides of the middle layer, charging oxygen in the bombardment process until the pressure of a vacuum chamber is 0.03Pa, pressurizing and discharging the electrode, wherein the bombardment current is 70mA, and the bombardment time is 40min to obtain a pretreated middle layer;
s3, spraying a 3-aminopropyl triethoxysilane solution (pH = 3-4) with the volume fraction of 1.7% on the surface of the pretreatment intermediate layer, wherein the spraying amount is 1.8g/cm2Obtaining a pre-spraying intermediate layer; attaching polyvinylidene fluoride films with the thickness of 20 mu m on two sides of the pre-sprayed middle layer, carrying out pressurization heat treatment for 7min at the pressurization pressure of 1.6MPa and the heat treatment temperature of 100 ℃, and cooling to room temperature to obtain the high-temperature-resistant solar photovoltaic back plate.
Comparative example 2
A high temperature resistant solar photovoltaic back panel comprising: the middle layer is made of montmorillonite/polyethylene glycol terephthalate composite, and the protective layer is made of polyvinylidene fluoride.
The preparation method of the high-temperature-resistant solar photovoltaic back plate comprises the following steps:
s1, drying 80kg of polyethylene terephthalate in a drying oven at the temperature of 75 ℃ to remove water, mixing with 3kg of nano-montmorillonite, adding into a torque rheometer preheated to 130 ℃ for melt blending, wherein the rotating speed of a rotor is 80 r/min; extruding, drying and injection molding to obtain an intermediate layer with the thickness of 0.1 mm;
s2, performing oxygen plasma bombardment on two sides of the middle layer, charging oxygen in the bombardment process until the pressure of a vacuum chamber is 0.03Pa, pressurizing and discharging the electrode, wherein the bombardment current is 70mA, and the bombardment time is 40min to obtain a pretreated middle layer;
s3, spraying a 3-aminopropyltriethoxysilane solution (pH = 3-4) with a volume fraction of 1.7% on the surface of the pretreatment interlayer, wherein the spraying amount is 1.8g/cm2Obtaining a pre-spraying intermediate layer; attaching polyvinylidene fluoride films with the thickness of 20 mu m on two sides of the pre-sprayed middle layer, carrying out pressurization heat treatment for 7min at the pressurization pressure of 1.6MPa and the heat treatment temperature of 100 ℃, and cooling to room temperature to obtain the high-temperature-resistant solar photovoltaic back plate.
The breakdown voltage test of the high-temperature resistant solar photovoltaic back panels obtained in the example 5 and the comparative examples 1-2 is carried out by adopting a voltage tester, which specifically comprises the following steps: each group of samples is placed between spherical electrodes, the applied voltage is increased until the samples are subjected to dielectric breakdown, the voltage increase rate is 500V/2s, the diameter of the electrodes is 3mm, the direct current mode is adopted, and the leakage current is 5 mA.
As shown in fig. 1, the breakdown voltage of the high temperature resistant solar photovoltaic back sheet obtained in example 5 is significantly higher than that of comparative examples 1 and 2. The applicant believes that: when current flows through the middle layer, the nano-sheet montmorillonite with large specific surface area can block the current and induce a discharge channel to develop along a hyperbranched chain structure, so that the discharge distance is effectively increased, the electrode breakdown is delayed, the power frequency breakdown field intensity is increased, good acting force between the polyethylene glycol terephthalate and the montmorillonite subjected to dispersion treatment can effectively restrict the movement of polar groups, the free movement of effective electrons is reduced and the stroke is shortened under the action of an electric field, and the forming difficulty of the internal discharge channel is further enhanced.
The mechanical property test of the high-temperature resistant solar photovoltaic back panel obtained in the example 5 and the comparative examples 1-2 is as follows:
reference is made to GB/T1040.1-2006 section 1 of determination of tensile Properties of plastics: the test was carried out as described in general rules, each group of test specimens being dumbbell-shaped sheet specimens with a tensile rate of 50 mm/min. The test is carried out according to GB/T9341-2008 plastic bending property determination, the bending test sample size is 100mm multiplied by 10mm, and the bending rate is 2 mm/min. Referring to GB/T1043.1-2008 plastic simple supported beam impact performance determination part 1: the impact test sample and the bending test sample are the same in size.
As shown in fig. 2, the high temperature resistant solar photovoltaic back sheet obtained in example 5 has the best tensile strength, bending strength and notch impact strength.
The applicant believes that: the invention adopts the dispersion treatment of montmorillonite and polyethylene glycol terephthalate for blending and melting, and because the dispersion treatment of montmorillonite contains a large amount of hyperbranched structures, the compatibility with polyethylene glycol terephthalate is high, the crystallization performance of polyethylene glycol terephthalate can be effectively improved by dispersing montmorillonite in polyethylene glycol terephthalate, the interaction between the structure of hyperbranched molecular chains on the dispersion treatment of montmorillonite and polyethylene glycol terephthalate chains is enhanced, and the ultra-large specific surface area of the dispersion treatment of montmorillonite plays a role of cross-linking points on the polyethylene glycol terephthalate molecular chains. When the product is stretched by an external force, the molecular chains are oriented along the stretching direction and slide, so that the tensile strength and the elongation at break of the product are synchronously increased; when the montmorillonite is impacted by external force, the lamellar structure of the montmorillonite and the hyperbranched structure in the montmorillonite can well transmit and bear the external force, so that the impact strength of the middle layer is obviously improved.
The heat distortion temperature of the high temperature resistant solar photovoltaic back panels obtained in example 5 and comparative examples 1-2 was measured by an XRW-300F thermal Vicat thermal deformation tester according to ASTM D648-2000 Plastic Heat distortion temperature test method.
As shown in fig. 3, the heat distortion temperature of the high temperature resistant solar photovoltaic back sheet obtained in example 5 is the highest. The applicant believes that: the montmorillonite contains a large amount of hyperbranched structures in the dispersion treatment, the compatibility with the polyethylene glycol terephthalate is high, the crystallization performance of the polyethylene glycol terephthalate can be effectively improved when the montmorillonite is dispersed in the polyethylene glycol terephthalate, the interaction between the montmorillonite and the polyethylene glycol terephthalate chain is enhanced by the structure of hyperbranched molecular chains on the montmorillonite in the dispersion treatment, the ultra-large specific surface area of the montmorillonite in the dispersion treatment plays a role of cross-linking points on the polyethylene glycol terephthalate molecular chains to limit the movement among the molecular chains, and therefore the heat deformation resistance is increased.
Meanwhile, the nano-montmorillonite is fully dispersed in the system, the nano-sheet layer effectively plays a role in blocking, the thermal decomposition temperature of the material can be effectively increased in the thermal decomposition process, and the thermal stability of the product is excellent.
The above description is only for the preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art should be considered to be within the technical scope of the present invention, and the technical solutions and the inventive concepts thereof according to the present invention should be equivalent or changed within the scope of the present invention.

Claims (8)

1. A high-temperature-resistant solar photovoltaic back plate is characterized by comprising an intermediate layer and protective layers attached to two sides of the intermediate layer, wherein the intermediate layer is made of a montmorillonite/polyethylene glycol terephthalate compound, and the protective layers are made of polyvinylidene fluoride;
the montmorillonite/polyethylene glycol terephthalate compound is obtained by melting and blending polyethylene glycol terephthalate and dispersion-treated montmorillonite and then performing injection molding;
wherein, the montmorillonite for dispersion treatment is obtained by intercalating caprolactam on the nano montmorillonite and grafting polyamide-amine between the nano montmorillonite layers, and specifically comprises the following steps:
adding nano montmorillonite and polyamide-amine into water, stirring, adding caprolactam, continuously stirring, adding phosphate and acetic acid under the protection of nitrogen, carrying out hydrothermal reaction for 1-2h at 70-80 ℃, heating to 180-200 ℃, continuously reacting for 1-2h, maintaining the pressure at 1.2-2MPa in the hydrothermal reaction process, recovering to normal pressure, vacuumizing for 1-2h at 210-220 ℃, cooling to room temperature, and crushing to obtain the dispersion-treated montmorillonite.
2. The high-temperature-resistant solar photovoltaic back sheet according to claim 1, wherein the mass ratio of the nano montmorillonite, the polyamide-amine, the caprolactam, the phosphate and the acetic acid is 5-10: 1-2: 1-4: 0.1-0.5: 1-2.
3. A method for preparing the high temperature resistant solar photovoltaic back sheet according to any one of claims 1-2, comprising the steps of:
s1, drying the polyethylene terephthalate, mixing the dried polyethylene terephthalate with the montmorillonite subjected to dispersion treatment, adding the mixture into a torque rheometer preheated to 120 ℃ and 140 ℃, and performing melt blending, extrusion, drying and injection molding to obtain an intermediate layer;
s2, performing oxygen plasma bombardment on two sides of the middle layer, charging oxygen gas in the bombardment process until the pressure of a vacuum chamber is 0.01-0.05Pa, discharging the electrode under pressure, wherein the bombardment current is 60-80mA, and the bombardment time is 30-50min to obtain a pretreated middle layer;
s3, spraying a 3-aminopropyl triethoxysilane solution on the surface of the pretreated intermediate layer to obtain a pre-sprayed intermediate layer; and attaching polyvinylidene fluoride films to two sides of the pre-sprayed middle layer, carrying out pressure heat treatment, and cooling to room temperature to obtain the high-temperature-resistant solar photovoltaic back plate.
4. The preparation method of the high-temperature-resistant solar photovoltaic back sheet according to claim 3, wherein in S1, the mass ratio of the polyethylene terephthalate to the dispersion-treated montmorillonite is 50-100: 1-5.
5. The method for preparing the high-temperature-resistant solar photovoltaic back sheet according to claim 3, wherein in S1, the drying temperature is 70-80 ℃.
6. The high temperature resistant solar light of claim 3The preparation method of the photovoltaic back plate is characterized in that in S3, the volume fraction of the 3-aminopropyl triethoxysilane solution is 1.5-2%, and the spraying amount is 1.5-2g/cm2。
7. The method for preparing the high-temperature-resistant solar photovoltaic back sheet according to claim 3, wherein in S3, the pH value of the 3-aminopropyl triethoxysilane solution is 3-4.
8. The method for preparing the high-temperature-resistant solar photovoltaic back plate according to claim 3, wherein in S3, the pressurizing heat treatment time is 5-10min, the pressurizing pressure is 1.2-2MPa, and the heat treatment temperature is 80-120 ℃.
CN202210619728.7A 2022-06-02 2022-06-02 High-temperature-resistant solar photovoltaic back plate Active CN114683660B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202210619728.7A CN114683660B (en) 2022-06-02 2022-06-02 High-temperature-resistant solar photovoltaic back plate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202210619728.7A CN114683660B (en) 2022-06-02 2022-06-02 High-temperature-resistant solar photovoltaic back plate

Publications (2)

Publication Number Publication Date
CN114683660A true CN114683660A (en) 2022-07-01
CN114683660B CN114683660B (en) 2022-09-02

Family

ID=82130961

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202210619728.7A Active CN114683660B (en) 2022-06-02 2022-06-02 High-temperature-resistant solar photovoltaic back plate

Country Status (1)

Country Link
CN (1) CN114683660B (en)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101962467A (en) * 2010-10-15 2011-02-02 中国乐凯胶片集团公司 Polyester film and preparation method thereof
CN102738275A (en) * 2011-04-12 2012-10-17 苏州尚善新材料科技有限公司 Solar cell assembly backplane and preparation method thereof
CN104710657A (en) * 2015-03-27 2015-06-17 上海工程技术大学 Flame-retardant rubber and preparation method thereof
CN107556708A (en) * 2016-06-30 2018-01-09 崔敏娟 A kind of PET film
CN110105753A (en) * 2019-03-22 2019-08-09 祥兴(福建)箱包集团有限公司 A kind of trolley case castor carbon fiber enhancing nylon composite materials and preparation method thereof
CN111435688A (en) * 2018-12-25 2020-07-21 苏州阿特斯阳光电力科技有限公司 Photovoltaic backboard and photovoltaic module comprising same

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101962467A (en) * 2010-10-15 2011-02-02 中国乐凯胶片集团公司 Polyester film and preparation method thereof
CN102738275A (en) * 2011-04-12 2012-10-17 苏州尚善新材料科技有限公司 Solar cell assembly backplane and preparation method thereof
CN104710657A (en) * 2015-03-27 2015-06-17 上海工程技术大学 Flame-retardant rubber and preparation method thereof
CN107556708A (en) * 2016-06-30 2018-01-09 崔敏娟 A kind of PET film
CN111435688A (en) * 2018-12-25 2020-07-21 苏州阿特斯阳光电力科技有限公司 Photovoltaic backboard and photovoltaic module comprising same
CN110105753A (en) * 2019-03-22 2019-08-09 祥兴(福建)箱包集团有限公司 A kind of trolley case castor carbon fiber enhancing nylon composite materials and preparation method thereof

Also Published As

Publication number Publication date
CN114683660B (en) 2022-09-02

Similar Documents

Publication Publication Date Title
KR20020079535A (en) Outer covering for solar battery
US20120301991A1 (en) Composition suitable for use as a cross-linking masterbatch including a functional polyolefin
CN110713803A (en) Thermoplastic photovoltaic module packaging adhesive film and preparation method thereof
CN108598196B (en) High-weather-resistance solar cell back plate and preparation method thereof
JP2008028294A (en) Sheet for sealing rear surface of solar battery
WO2019004714A1 (en) Sulfide-based solid electrolyte material, preparation method therefor, method for preparing solid electrolyte layer and electrode composite layer which comprise sulfide-based solid electrolyte material, and all-solid-state battery comprising same
JP2009200385A (en) Protective sheet for solar cell and solar cell module using same
CN114683660B (en) High-temperature-resistant solar photovoltaic back plate
CN111500204A (en) Adhesive film, composition for forming the same, and electronic device
CN112802916A (en) High-water-vapor-barrier solar photovoltaic back plate and preparation process and application thereof
CN114605927B (en) high-PID-resistance photovoltaic adhesive film, preparation method thereof and photovoltaic module
JP2007242616A5 (en)
CN114243102A (en) Polysiloxane solid electrolyte, solid battery, preparation method and application thereof
CN109605880B (en) Weather-proof high-barrier solar cell back plate and preparation method thereof
CN103057223A (en) Polyamide backplane for solar energy assembly
CN108165182A (en) A kind of solar components packaging EVA adhesive film and preparation method thereof
CN114907633A (en) Root puncture-resistant PE/POE composite waterproof coiled material, and preparation method and application thereof
CN114149770B (en) Photovoltaic module and manufacturing method thereof
CN111224147B (en) Flame-retardant polymer solid electrolyte membrane, preparation method thereof and all-solid-state battery
CN111435688B (en) Photovoltaic backboard and photovoltaic module comprising same
CN113635578A (en) Preparation method of fuel cell protective film
CN103367490A (en) Solar battery back film subject to low-temperature plasma treatment and preparation method thereof
CN115368681A (en) Tear-resistant ethylene propylene diene monomer molded plate and preparation method thereof
CN105619980B (en) A kind of crystalline silicon photovoltaic module encapsulation wet backboard of high insulation resistance
CN116203772B (en) Proton transfer-based quick response electrochromic device and preparation method thereof

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant