CN114678270A - Inductively coupled plasma processing device and etching method thereof - Google Patents

Inductively coupled plasma processing device and etching method thereof Download PDF

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Publication number
CN114678270A
CN114678270A CN202011544771.9A CN202011544771A CN114678270A CN 114678270 A CN114678270 A CN 114678270A CN 202011544771 A CN202011544771 A CN 202011544771A CN 114678270 A CN114678270 A CN 114678270A
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gas
etching
reaction chamber
inductor
substrate
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黄秋平
许颂临
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Advanced Micro Fabrication Equipment Inc Shanghai
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Advanced Micro Fabrication Equipment Inc Shanghai
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Priority to CN202011544771.9A priority Critical patent/CN114678270A/en
Priority to TW110140196A priority patent/TWI827992B/en
Publication of CN114678270A publication Critical patent/CN114678270A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/3211—Antennas, e.g. particular shapes of coils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching

Abstract

An etching method for an inductively coupled plasma processing apparatus, the inductively coupled plasma processing apparatus includes a reaction chamber, the top of the reaction chamber includes an insulating window and an inductive coil device located above the insulating window, wherein the center of the insulating window includes an air inlet nozzle, the reaction chamber further includes a base, a substrate to be processed is located on the base, the air inlet nozzle is used for inputting processing gas into the reaction chamber, and the method is characterized in that: the processing gas input into the reaction cavity through the gas inlet nozzle comprises etching gas and inert gas, wherein the etching gas is used for reacting with the material on the substrate to be processed to perform etching, and the flow of the inert gas is greater than 2/3 of the flow of the etching gas.

Description

Inductively coupled plasma processing device and etching method thereof
Technical Field
The invention relates to the field of semiconductors, in particular to a plasma processing method applied to an inductively coupled plasma processing device.
Background
Plasma processing devices are widely used in integrated circuit manufacturing processes, such as deposition, etching, and the like. An Inductively Coupled Plasma (ICP) device is one of the mainstream technologies in a Plasma processing device, and the principle of the ICP device is mainly that radio frequency power is used to drive an inductive coupling coil to generate a strong high-frequency alternating magnetic field, so that low-pressure reaction gas is ionized to generate Plasma. The plasma contains a large number of active particles such as electrons, ions, excited atoms, molecules, free radicals and the like, and the active particles can perform various physical and chemical reactions with the surface of the wafer to be processed, so that the appearance of the substrate to be processed is changed, and the etching process is completed.
Fig. 1 shows a schematic structural view of an inductively coupled plasma reactor (ICP), and the ICP etching apparatus is an apparatus for generating plasma and etching by introducing energy of a radio frequency power source into the inside of a reaction chamber in the form of magnetic field coupling via an induction coil. The inductively coupled plasma reactor includes a vacuum reaction chamber 200 having a substantially cylindrical reaction chamber sidewall 201 made of a metal material, and an opening 202 formed in the reaction chamber sidewall for receiving the substrate W. An insulating window 217 is disposed over the chamber sidewall 201, the inductive coil 215 is disposed over the insulating window 217, and a radio frequency power source 218 applies a radio frequency voltage to the inductive coil 215 through a radio frequency matching network 216.
The inner part of the reaction cavity is provided with a lining 220 for protecting the inner wall of the reaction cavity from being corroded by plasma, one end of the side wall of the reaction cavity close to the insulating window is provided with a gas nozzle 203, a gas nozzle 103 can be further arranged in the central area of the insulating window 217, the gas nozzle 203 is used for injecting reaction gas into the vacuum reaction cavity 200, and the radio frequency power of the radio frequency power source 218 drives the inductance coil 215 to generate a strong high-frequency alternating magnetic field, so that the low-pressure reaction gas in the reaction cavity is ionized to generate plasma. Wherein the process gas supply apparatus 100 outputs the reaction gas with an adjustable flow ratio to the center gas showerhead and the edge gas nozzles 203. A base 210 is disposed at a downstream position of the vacuum reaction chamber 200, an electrostatic chuck 212 is disposed on the base 210, and an electrostatic electrode 213 is disposed inside the electrostatic chuck 212 for generating an electrostatic attraction force to support and fix the substrate W to be processed during the process. The plasma contains a large number of active particles such as electrons, ions, excited atoms, molecules, radicals and the like, and the active particles can perform various physical and chemical reactions with the surface of the substrate to be processed, so that the appearance of the surface of the substrate is changed, and the etching process is completed. A bias rf power source 250 applies a bias rf voltage to the pedestal through an rf matching network 252 for controlling the direction of bombardment of charged particles in the plasma. An exhaust pump 240 is further disposed below the vacuum reaction chamber 200 for exhausting the reaction by-products out of the vacuum reaction chamber to maintain a vacuum environment of the reaction chamber.
When the plasma processing effect in the radial direction on the substrate is not uniform in the plasma reaction chamber having the above-described structure, the flow rate inputted from the process gas supply apparatus 100 to the edge gas ejection openings 203 or the flow rate inputted to the center showerhead 103 may be adjusted to improve uniformity. However, the edge gas jets 203 disposed through the aluminum liner 220 present a number of technical problems, the corrosive process gases corroding the gas flow passages in the liner 220, the complex shape of the gas flow passages and the extremely fine inner diameter (minimum <1mm) making the application of corrosion resistant coatings in these gas flow passages a technical challenge. On the other hand, the gas flow pipe passing through the liner 220 also makes it more difficult to control the temperature of the liner stably, so that the supply of the process gas from the sidewall of the reaction chamber may improve the uniformity of the plasma process, but also causes problems of complicated structure and high manufacturing cost.
Disclosure of Invention
The invention provides an etching method for an inductively coupled plasma processing device, wherein the inductively coupled plasma processing device comprises a reaction chamber, the top of the reaction chamber comprises an insulation window and an inductance coil device positioned above the insulation window, the center of the insulation window comprises an air inlet nozzle, the reaction chamber also comprises a base, a substrate to be processed is positioned on the base, and the air inlet nozzle is used for inputting processing gas into the reaction chamber, and the etching method is characterized in that: and providing the processing gas to the reaction cavity through the gas inlet nozzle, igniting plasma to perform plasma processing on the substrate to be processed, wherein the processing gas input into the reaction cavity comprises etching gas and inert gas, the etching gas is used for reacting with a material on the substrate to be processed to perform etching, and the flow of the inert gas is greater than 2/3 of the flow of the etching gas. The etching method provided by the invention can greatly improve the uniformity of plasma treatment.
Preferably, the flow rate of the inert gas is greater than the flow rate of the etching gas.
Wherein the inductor winding arrangement comprises a first and a second inductor winding, wherein the first inductor winding is located in the central area of the insulating window and the second inductor winding surrounds said first inductor winding. When the flow of the inert gas is more than or equal to 2 times of the flow of the etching gas, and the power input to the first inductance coil is more than the power input to the second inductance coil, the etching uniformity can be further improved, and the etching rate is improved.
The invention also provides an inductively coupled plasma processing device, which comprises a reaction chamber, wherein the top of the reaction chamber comprises an insulating window and an inductance coil device positioned above the insulating window, the center of the insulating window comprises an air inlet nozzle, the reaction chamber also comprises a base, a substrate to be processed is positioned on the base, the air inlet nozzle is used for inputting processing gas into the reaction chamber, the air inlet nozzle is connected to a processing gas supply device and outputs the processing gas comprising etching gas and inert gas into the reaction chamber, and the etching gas can react with the surface material of the substrate to be processed; the inductance coil device comprises a first inductance coil and a second inductance coil, wherein the first inductance coil is positioned in the central area of the insulation window, and the second inductance coil surrounds the first inductance coil; a controller controls the processing gas supply device so that the flow rate of the inert gas in the processing gas is larger than the flow rate of the etching gas.
Drawings
FIG. 1 is a schematic view showing a structure of a plasma processing apparatus according to the prior art;
FIG. 2 is a schematic view of a plasma processing apparatus according to the present invention;
FIGS. 3a and 3b are graphs showing the distribution of etching rate at different helium flows according to the present invention;
FIG. 4 is a schematic cross-sectional view of the treating apparatus of the present invention shown in FIG. 2 at X.
Detailed Description
In a semiconductor chip production line, an inductively coupled plasma etcher (ICP) is generally used to perform silicon etching such as single crystal silicon or polycrystalline silicon because of low ion energy. The ICP plasma processor according to the present invention has a structure as shown in fig. 2, which is the same as the basic structure of the prior art plasma processing apparatus shown in fig. 1, but the liner 220 is not provided with a processing gas channel, so that the liner 220 has a simple structure and is easy to manufacture, and the manufacturing cost of the whole plasma processing apparatus is greatly reduced. The process gas supply apparatus 100 selects the ratio of each component gas from the gases of the plurality of components in the plurality of gas storage bottles according to the setting of the process recipe, and finally mixes them to form the process gas. The process gas is supplied through the gas distributor 101 to the inlet showerhead 103 located below the central region of the insulating window 217, and the inlet showerhead includes a first gas injection hole 103a located at the center and a plurality of second gas injection holes 103b arranged around the first gas injection hole 103a, wherein the gas supplied from the first gas injection hole 103a flows downward and the gas discharged from the second gas injection holes 103b flows toward the peripheral region of the reaction chamber. The gas distributor 101 can improve uniformity to some extent by adjusting the flow rate ratio of the process gas inputted to the first gas ejection port 103a and the second gas ejection port 103 b. The inductor coil on top of the insulating window includes a first inductor coil 213 located at a central region and a second inductor coil 215 disposed around the central region, and a radio frequency power source 218 outputs radio frequency power to a power divider 214 through a matcher 216, and the power divider divides a ratio of the power output to the first inductor coil 213 and the second inductor coil 215.
When silicon material is etched, the main etching gas adopted can be SF6Or may also include Cl2Small amounts of inert gases such as argon, helium are also typically added to assist the ion bombardment. Typical process gas parameter is SF6/Cl2The flow rates of the/He gases are respectively as follows: 60sccm/240sccm/100 sccm.However, when etching is performed by using such parameters, the desired etching uniformity cannot be achieved even after adjustment by the gas flow distributor 101 and the power distributor 214. The applicant researches and discovers that since the reaction chamber is internally lined with no independent gas flow channel and only the gas nozzle 103 at the center of the insulating window 217 is arranged, the etching gas ejected from the second gas nozzle 103b is difficult to diffuse to the peripheral area of the reaction chamber in the reaction chamber, and the effect is slight even if the flow rate of the gas ejected from the second gas nozzle is increased. The inability of the etching gas to reach the edge region quickly also results in the inability to effectively compensate for the non-uniformity in the final etch rate distribution due to the non-uniformity in the gas distribution by dissociating only a small amount of plasma in the underlying process gas even with increased input power to the second coil 215.
Based on the above-described limited gas inlet structure, the inventors have developed a plasma processing method that achieves the best etching rate and etching uniformity by using process composition adjustment. The new etching method provided by the invention comprises the steps of etching gas SF6/Cl2The flow rate of (2) is substantially unchanged, and the flow rate of the inert gas (He) is greatly increased to 200sccm or more than 300sccm while maintaining 300 sccm. The greatly increased He gas can be introduced into any nozzle 103a/103b in the gas inlet nozzle 103, and then He gas molecules with extremely small molecular mass are quickly diffused to the peripheral area of the reaction cavity, so that a plasma concentration distribution curve generated by the He gas molecules and etching gas (SF)6/Cl2) The plasma concentrations generated by the ionization of the molecules form a complement. Finally, even if the concentration of the etching gas molecules in the edge area is slightly lower, the plasma concentration is higher, so that the activity of the etching gas molecules is higher, and the difference of the etching speed with the central area caused by less etching gas is compensated. The etch rate is primarily affected by the concentration of the etch reactants, and the prior art has used helium only as a component of the physical bombardment, so that only a small flow rate is sufficient to achieve downward bombardment, but it has not been recognized that increasing the flow rate of helium to the extent defined by the present invention can shift the role of helium in the etch process, although helium does not react directly with the underlying silicon material, but the high flow rate of helium does not cause a change in the role of helium during etchingThe gas shower nozzle 103 in the center of the reaction chamber is introduced to form plasma with higher concentration at the periphery of the reaction chamber, thereby realizing the compensation of the etching rate below. To further enhance the effect of the invention, more helium may be fed into the reaction chamber through the nozzles 103b in the inlet showerhead, which facilitates rapid diffusion of helium into the edge region of the reaction chamber. The process gases flowing through 103a and 103b in the showerhead 103 have different helium contents, where 103b has a higher helium content than 103a, but the total process gas helium content still needs to be maintained above 2/3.
Through further research, the inventors found that fig. 3a is a graph comparing the etching rate distribution curves at different helium flow rates with the etching gas maintained at a constant flow rate. Where the horizontal axis is the location area extending from the center (X0) of the substrate to the periphery to the edge of the substrate (X150 mm) and the vertical axis is the etch rate in angstroms per minute (a/m). It can be seen from the figure that with the increase of the flow of helium gas, the etching rate of the edge region of the substrate rises rapidly, and the etching rate of the central region drops slowly, so as to achieve a new uneven distribution that the etching rate of the central region is smaller than that of the edge region. As shown in FIGS. 3a and 3b, the flow rate of helium in the prior art is generally selected to be about 100sccm, and the uniformity of the corresponding etching rate is 6.1% (the difference between the etching rates of different regions on the substrate), which is improved to 4.9% when the flow rate of helium reaches 200sccm and 300sccm, and which can be optimized to 4.1% when the flow rate of helium reaches 500 sccm. Further increasing the flow to 600sccm the uniformity becomes 7.5%, but the distribution becomes high in the edge area and low in the center area, in contrast to the high center and low edge distribution exhibited by the prior art.
For this reason, the inventor proposes another preferred embodiment, in which the flow rate of the helium gas is increased to more than two times (more than 600 sccm) the etching gas, and the etching rate is increased to a higher edge region and a lower center region, which are adjusted by the power divider 214, so that the rf power input to the center inductor 213 is increased from 40% to more than 50% or more than 60% of the total power output from the matching device 216. As the etching gas is more concentrated in the central area above the substrate, the etching rate in the central area can be immediately improved by increasing the corresponding radio frequency power input, and finally uniform etching rate distribution (the etching rate uniformity is less than 4%) is obtained, and meanwhile, the whole etching rate is also increased from 1400A/m to more than 1600A/m. As shown in FIG. 3b, curve 290 is the etch rate curve for a helium flow of 600sccm while increasing the power of the first RF coil to 55%. Therefore, the plasma etching process can obtain higher plasma etching rate uniformity in the inductive coupling reactor with only one gas inlet nozzle, and can also increase the average etching rate.
The inductor device of the present invention may be a flat type inductor as shown in fig. 2, or may be other shapes such as a dome shape, or a shape in which the center concave edge is convex upward, and any coil structure can be applied to the embodiment of the present invention as long as the concentration ratio of the center and edge regions in the lower plasma processing chamber can be independently adjusted.
The first inductor winding 213 and the second inductor winding 215 are used to control plasma concentration parameters below the central first processing region Sc and the peripheral second processing region Se, respectively. As shown in fig. 4, which is a schematic cross-sectional view of the plasma processor X of fig. 2, wherein a separation line L between the first and second inductors divides the lower reaction space into two processing regions, the separation line L may be located at a midpoint between the outermost side of the first inductor 213 and the innermost side of the second inductor 215, or may be closer to the first inductor or the second inductor, the electromagnetic field generated by the first inductor 213 may dominate the plasma concentration of a first region Sc inside the separation line L, and the electromagnetic field generated by the corresponding second inductor 215 may dominate the plasma concentration of a region Se between the outer side of the separation line and the inner wall of the inner side 220. When the traditional plasma processing technology is adopted, the structure and the size of an inductance coil of a plasma processor are relatively fixed, the area ratio of Sc to Se is R, and the radio frequency power P1 and P2 input into the first inductance coil and the second inductance coil are positively correlated with the area ratio R. Usually, the ratio of the radio frequency power input into the first and second inductive coils (P1/P2) is about 1.2-1.5R, and the plasma concentration distribution is not uniform due to too high or too low of the radio frequency power. Since the center region etch rate is distributed higher than the edge region etch rate when the conventional process parameters are running, the non-uniformity is also typically increased in input power P2 or decreased in input power P1, which further decreases the power ratio. In the present invention, since a large amount of inert gas is introduced into the reaction chamber, there is a special case that the center etching rate is lower than the edge etching rate, and the power P1 inputted to the center region Sc needs to be larger than the power P2 inputted to the edge region Sc in order to compensate for the etching rate distribution curve which is quite different from the prior art due to the introduction of a large amount of inert gas. Therefore, the radio frequency power ratio of the first inductance coil and the second inductance coil in the invention needs to be more than 2.5R to meet the requirement of process uniformity, which is far beyond the adjusting range of the traditional process. For example, the first inductor coil occupies 1/4 area of the cross section of the plasma processing space, the second inductor coil occupies 3/4 area, and the ratio R is 1/3, at this time, the power ratio (P1/P2) input to the first and second inductor coils in the conventional process needs to be about 0.4-0.5, that is, 28.5% of rf power is input to the first inductor coil at the center, and 71.5% of rf power is input to the second inductor coil at the edge. However, after the present invention is adopted, the radio frequency power ratio of the first inductance coil and the second inductance coil needs to reach a parameter of 2.5 × 1/3 ═ 0.83 or more, that is, 45.4% is needed for P1, and 54.6% radio frequency power is needed for P2 to meet the requirement of etching rate uniformity.
The second inductor 215 may be further divided into a plurality of sub-inductors for independent input power control, such as inputting the first sub-coil power P21 and inputting the second sub-coil power P22. The invention aims to be finally achieved as long as the requirement that the ratio relation between the P1 and the power sum (P21+ P22) of the two sub-coils, which is provided by the invention, is more than 2.5R is met, so that the etching rate uniformity can be relatively improved, and the invention belongs to a modified embodiment of the invention.
According to the description of the above working principle of the present invention, it can be seen that the etching method of the present invention can also be applied to various etching processes in the inductively coupled reactor as shown in fig. 2, and the method of the present invention can be used to increase the flow rate of helium gas as long as there is uneven distribution of the etching gas from the center to the edgeAnd a plasma concentration distribution curve with higher edge concentration is obtained, and finally, more uniform etching rate distribution is obtained. The etching gas may be a fluorocarbon such as C for different etching processes, e.g. for etching silicon oxide layers4F8Or a fluorocarbon such as CHF3And the like, mixing other auxiliary gases such as oxygen and other halogen gases such as bromine gas and the like for etching, and simultaneously introducing a large amount of micromolecule inert gas, so that the etching rate has uniform distribution on the substrate. The flow rate of the inert gas is required to be more than 2/3 of the total etching gas, preferably more than 2 times or more than the total etching gas flow rate, and the power input into the central inductance coil is increased to improve the etching uniformity and the etching rate.
Although the present invention is disclosed above, the present invention is not limited thereto. Various changes and modifications may be effected therein by one skilled in the art without departing from the spirit and scope of the invention as defined in the appended claims.

Claims (10)

1. An etching method for an inductively coupled plasma processing apparatus, the inductively coupled plasma processing apparatus includes a reaction chamber, the top of the reaction chamber includes an insulating window and an inductive coil device located above the insulating window, wherein the center of the insulating window includes an air inlet nozzle, the reaction chamber further includes a base, a substrate to be processed is located on the base, the air inlet nozzle is used for inputting processing gas into the reaction chamber, and the method is characterized in that:
and providing the processing gas to the reaction cavity through the gas inlet nozzle, igniting plasma to perform plasma processing on the substrate to be processed, wherein the processing gas input into the reaction cavity comprises etching gas and inert gas, the etching gas is used for reacting with a material on the substrate to be processed to perform etching, and the flow of the inert gas is greater than 2/3 of the flow of the etching gas.
2. The etching method according to claim 1, wherein the inductor means comprises first and second inductors, wherein the first inductor is located in a central region of the insulating window and the second inductor surrounds the first inductor.
3. The etching method according to claim 1, wherein the material on the substrate is crystalline silicon, and the etching gas comprises a fluorine-containing gas and a chlorine-containing gas.
4. The etching method of claim 1, wherein the material on the substrate is a silicon oxide compound, and the etching gas comprises a fluorocarbon or a fluorocarbon.
5. The etching method according to claim 1, wherein a flow rate of the inert gas is larger than a flow rate of the etching gas.
6. The etching method according to claim 2, wherein the flow rate of the inert gas is 2 times or more the flow rate of the etching gas, and the power inputted to the first inductor is larger than the power inputted to the second inductor.
7. The etching method according to claim 1, wherein the gas supply nozzle comprises a first gas supply nozzle at a center, a plurality of second gas supply nozzles surrounding the first gas supply nozzle, and a gas distributor for controlling a gas flow component or a flow ratio to be supplied to the first and second gas supply nozzles, the gas being supplied from the second gas supply nozzles toward an edge region of the lower substrate.
8. An inductively coupled plasma processing device comprises a reaction chamber, the top of the reaction chamber comprises an insulation window and an inductance coil device positioned above the insulation window, wherein the center of the insulation window comprises an air inlet nozzle, the reaction chamber also comprises a base, a substrate to be processed is positioned on the base, the air inlet nozzle is used for inputting processing gas into the reaction chamber,
the gas inlet nozzle is connected to a processing gas supply device and outputs processing gas comprising etching gas and inert gas into the reaction cavity, wherein the etching gas can react with the surface material of the substrate to be processed;
the inductance coil device comprises a first inductance coil and a second inductance coil, wherein the first inductance coil is positioned in the central area of the insulation window, and the second inductance coil surrounds the first inductance coil;
a controller controls the processing gas supply device so that the flow rate of the inert gas in the processing gas is larger than the flow rate of the etching gas.
9. The plasma processing apparatus as claimed in claim 8, wherein the controller controls the process gas supply such that the flow rate of the inert gas in the process gas is 2 times greater than the flow rate of the etching gas and the power input to the first inductor is greater than the power input to the second inductor.
10. The plasma processing apparatus of claim 8 wherein the first inductive coil is configured to control plasma concentration in a first processing region below and the second inductive coil is configured to control plasma concentration in a second processing region, wherein the ratio of the horizontal cross-sectional areas of the first and second processing regions is R, the controller being configured such that the rf power P1 input to the first inductive coil is greater than 2.5R times the rf power P2 input to the second inductive coil.
CN202011544771.9A 2020-12-24 2020-12-24 Inductively coupled plasma processing device and etching method thereof Pending CN114678270A (en)

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