CN114675688A - Single-chip temperature control etalon and locking system and method for tunable laser frequency - Google Patents

Single-chip temperature control etalon and locking system and method for tunable laser frequency Download PDF

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Publication number
CN114675688A
CN114675688A CN202210203059.5A CN202210203059A CN114675688A CN 114675688 A CN114675688 A CN 114675688A CN 202210203059 A CN202210203059 A CN 202210203059A CN 114675688 A CN114675688 A CN 114675688A
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laser
etalon
frequency
temperature
temperature control
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Inventor
赵延霆
蒋源
姬中华
彭文鑫
李松浓
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Shanxi University
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Shanxi University
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    • GPHYSICS
    • G05CONTROLLING; REGULATING
    • G05DSYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
    • G05D23/00Control of temperature
    • G05D23/19Control of temperature characterised by the use of electric means
    • G05D23/20Control of temperature characterised by the use of electric means with sensing elements having variation of electric or magnetic properties with change of temperature
    • G05D23/24Control of temperature characterised by the use of electric means with sensing elements having variation of electric or magnetic properties with change of temperature the sensing element having a resistance varying with temperature, e.g. a thermistor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/06Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068Stabilisation of laser output parameters
    • H01S5/06804Stabilisation of laser output parameters by monitoring an external parameter, e.g. temperature
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/06Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068Stabilisation of laser output parameters
    • H01S5/0683Stabilisation of laser output parameters by monitoring the optical output parameters
    • H01S5/06837Stabilising otherwise than by an applied electric field or current, e.g. by controlling the temperature
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/06Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068Stabilisation of laser output parameters
    • H01S5/0683Stabilisation of laser output parameters by monitoring the optical output parameters
    • H01S5/0687Stabilising the frequency of the laser

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Automation & Control Theory (AREA)
  • Semiconductor Lasers (AREA)

Abstract

The invention discloses a monolithic temperature control etalon structure package and a tunable laser frequency locking system and method based on the etalon, and belongs to the technical field of laser spectrums and semiconductor laser frequency stabilization. The problems of low cost, simple structure and laser continuous frequency tuning and wavelength locking in a wide frequency range in the technical field of laser spectrum are solved. The invention utilizes the single-chip temperature control F-P etalon to lock the laser to the temperature control etalon with tunable transmission peak through the optical feedback system after filtering the injected laser, thereby realizing the continuous tunable laser frequency and the long-term frequency stability. The wavelength can be tuned by changing the cavity length of the temperature control etalon.

Description

Single-chip temperature control etalon and locking system and method for tunable laser frequency
Technical Field
The invention belongs to the technical field of laser frequency stabilization, and particularly relates to a monolithic temperature control etalon, and a system and a method for locking tunable laser frequency.
Background
The laser frequency stabilization technology plays a key role in the fields of laser spectrum, atomic physics and the like, for example: laser cooling and trapping of atoms, quantum manipulation, quantum storage, quantum communication, and the like. In experiments, laser frequency locking needs to consider two key factors, namely locking frequency position and stability, so as to stabilize laser within a desired range.
At present, the laser frequency stabilization technology is also more mature, and one technology is to lock laser onto an atomic or molecular resonance spectral line by utilizing a saturated absorption spectrum to obtain a narrower laser line width and better frequency resolution. The method is widely applied due to simplicity, effectiveness, good stability and strong reproducibility, but the method has the defect that the laser frequency can only be locked on a fixed transition line, so the locked frequency range is very limited. For laser frequency stabilization under the condition of a large frequency difference, an external optical cavity is usually used for transferring the stability of reference laser to target laser so as to realize frequency stabilization. For more demanding ultrastable laser sources, ultrastable cavities are often used to achieve frequency locking on sub-hertz line widths. However, such optical cavities are expensive, complex in structure, susceptible to external interference, and not suitable for simple and compact experimental systems.
Disclosure of Invention
The invention provides a monolithic temperature control etalon and a frequency locking system and method of a tunable laser, aiming at the problems that the existing optical cavity is high in cost, complex in structure, easy to be interfered by the outside, and not suitable for a simple and compact experimental system.
In order to achieve the purpose, the invention adopts the following technical scheme:
A single-chip temperature control etalon comprises a plano-convex lens, a heat conduction shell, a temperature sensor, a semiconductor refrigerator and a shell; the heat conducting shell and the shell are respectively provided with a through hole for laser to pass through, and the plano-convex lens is arranged in the through hole; encapsulated by a housing structure.
Further, the temperature sensor is disposed on the heat-conducting shell.
Furthermore, the semiconductor refrigerator is embedded into the bottom of the shell and clings to the surface of the heat conducting shell.
Further, dielectric films with the reflectivity of 99.0% are plated on both sides of the plano-convex lens.
Further, the material of the plano-convex lens is BK7 glass, the thickness is 6.3 millimeters, and the curvature radius is 40.7 mm. The material has high transmissivity to near infrared light and good thermal expansion coefficient.
Further, the heat conducting shell is a red copper heat conducting shell; the temperature sensor is a thermistor temperature sensor; the shell is a heat-insulating shell.
A locking system for continuously tunable laser frequency using a monolithic temperature controlled etalon comprising: the device comprises a tunable external cavity semiconductor laser, a polarization beam splitter prism, a matched lens, a wavemeter, a single-chip temperature control etalon, a temperature controller, a photoelectric detector, an oscilloscope, a feedback control digital frequency locking module and a frequency scanning module;
The tunable external cavity semiconductor laser is provided with a frequency scanning input end, a modulation end and a laser output end, and the laser output end is used for emitting laser; the wavelength meter is provided with a laser incident hole, receives laser through the incident hole and monitors the wavelength of the laser; the temperature controller is provided with a temperature feedback monitoring port and a temperature control output port and is used for controlling the temperature of the single-chip temperature control etalon; the photoelectric detector (7) is provided with a laser receiving end and a signal output end; the oscilloscope is provided with a signal input end; the feedback control digital frequency locking module is provided with a feedback input end and a frequency locking control output end; the frequency scanning module is provided with a scanning signal output end for scanning the laser frequency of the tunable external cavity semiconductor laser;
the tunable external cavity semiconductor laser, the polarization beam splitter prism, the matched lens, the wavelength meter, the single-chip temperature control etalon and the photoelectric detector are arranged on a laser light path emitted by the tunable external cavity semiconductor laser; the temperature sensor in the monolithic temperature control etalon is connected with a temperature feedback monitoring port of the temperature controller, and the semiconductor refrigerator is connected with a temperature control output port of the temperature controller; the output end of the photoelectric detector is respectively connected with the input end of the oscilloscope and the feedback input end of the feedback control digital frequency locking module; the frequency locking control output end of the feedback control digital frequency locking module is connected with the modulation end of the tunable external cavity semiconductor laser; and a scanning signal output end on the frequency scanning module is connected with a frequency scanning input end of the tunable external cavity semiconductor laser.
A method of continuous tuning and wavelength locking a laser frequency using a locking system that continuously tunes the laser frequency:
controlling the tunable external cavity semiconductor laser to output laser, outputting two beams of polarized laser through the polarization beam splitting prism to generate two optical paths, wherein one path of polarized laser enters the wavemeter to carry out wavelength monitoring; the other path of polarized laser is focused to the single-chip temperature control etalon through the matched lens and is transmitted into the photoelectric detector from the plano-convex lens on the single-chip temperature control etalon; the transmitted laser is detected by a photoelectric detector to obtain a transmission spectrum signal of the single-chip temperature control etalon and is converted into an electric signal to monitor the transmission spectrum signal on an oscilloscope; the function of the matching lens is to adjust the wavefront of the laser beam to match the curvature of the cavity of the monolithic temperature-controlled etalon. The lens with the most suitable focal length is selected as the matched lens by comparing the matching performance of the lens with different focal length and the cavity, namely the side mode suppression effect of the laser transmitted light through the matched lens and the single-chip temperature control etalon.
The tunable external cavity semiconductor laser outputs laser, and the frequency scanning module outputs sawtooth wave scanning signals to scan the output laser frequency,
The temperature controller is used for regulating and controlling the temperature of the single-chip temperature control etalon, so that the cavity length of the etalon is regulated and controlled, and the purpose of tuning the transmission laser frequency is achieved;
the transmission spectrum signal obtained by the photoelectric detector is fed back to a feedback control digital frequency locking module (9) for modulation, and the laser frequency is locked to the transmission peak of the monolithic temperature control etalon through a PID digital frequency locking system in the module, so that the frequency locking of the laser is realized; the drift of the laser frequency after locking is reduced by adjusting the PID parameters of the temperature controller (6) and the feedback control digital frequency locking module.
Compared with the prior art, the invention has the following advantages:
the monolithic temperature control etalon has a good side mode suppression effect, has a small influence on the filtering effect by the external environment, and is a low-cost, narrow-band and tunable optical filtering cavity structure.
The tuning semiconductor laser frequency locking system constructed based on the single-chip temperature control etalon realizes continuous tuning and wavelength locking of transmission laser wavelength by controlling the cavity length of the single-chip temperature control etalon, and has the advantages of compact integral structure, simple device and low cost.
The method for continuously tuning and locking the laser frequency based on the frequency locking system of the tuning semiconductor laser can realize continuous tuning and high-stability frequency locking in a wide frequency range of laser wavelength.
Drawings
FIG. 1 is a schematic diagram of the structure of a monolithic temperature-controlled etalon of the present invention;
FIG. 2 is a block diagram of the system of the present invention;
FIG. 3 is a transmission spectrum of a monolithic temperature controlled etalon;
FIG. 4 is a free spectral range of a monolithic temperature-controlled etalon;
FIG. 5 is a diagram showing the relationship between the transmission laser frequency of the single-chip temperature-controlled etalon and the temperature variation;
fig. 6 shows the frequency stabilization effect after laser free running and locking.
Description of reference numerals:
a. a plano-convex lens; b. a thermally conductive shell; c. a housing; d. a temperature sensor; e. a semiconductor refrigerator;
1. a tunable external cavity semiconductor laser; 2. a polarization beam splitter prism; 3. a matched lens; 4. a wavelength meter; 5. a monolithic temperature control etalon; 6. a temperature controller; 7. a photodetector; 8. an oscilloscope; 9. a feedback control digital frequency locking module; 10. and a frequency scanning module.
Detailed Description
To more clearly and specifically clarify the technical solutions and advantages of the present invention, the following description is given in more detail with reference to the accompanying drawings and specific examples:
example 1
As shown in fig. 1, a monolithic temperature-controlled etalon comprises a plano-convex lens a, a heat conducting shell b, a temperature sensor d, a semiconductor refrigerator e and a shell c; encapsulated by a housing structure.
And dielectric films with the reflectivity of 99.0% are plated on both sides of the plano-convex lens a.
The material of the plano-convex lens a is BK7 glass,
the stability condition of the plano-convex lens is satisfied:
Figure BDA0003530334120000051
wherein, L is the lens thickness, r is the curvature radius, the selected thickness is 6.3 mm, and the curvature radius is 40.7 mm; the quality of the etalon depends on finesse:
Figure BDA0003530334120000052
wherein R is the reflectance;
the heat conduction shell b is a red copper heat conduction shell; the temperature sensor d is a thermistor temperature sensor; the shell c is a heat-insulating shell.
Example 2
As shown in fig. 2, a continuously tunable laser frequency locking system was constructed using the monolithic temperature-controlled etalon of example 1, comprising: a tunable external cavity semiconductor laser (Toptica, DL pro 852nm), a wavemeter (hghfinesse, WS-7R), a monolithic temperature-controlled etalon, a temperature controller (Thorlabs, TED200C), a photodetector (Thorlabs, PDA36A), a feedback-controlled digital lock module (Toptica, DigiLock110), a frequency scanning module (Toptica, SC 110);
the tunable external cavity semiconductor laser 1 is provided with a frequency scanning input end, a modulation end and a laser output end, and the laser output end is used for emitting laser; the wavelength meter 4 is provided with a laser incident hole, receives laser through the incident hole and monitors the wavelength of the laser; the temperature controller 6 is provided with a temperature feedback monitoring port and a temperature control output port and is used for controlling the temperature of the monolithic temperature control etalon 5; the photoelectric detector 7 is provided with a laser receiving end and a signal output end; a signal input end is arranged on the oscilloscope 8; the feedback control digital frequency locking module 9 is provided with a feedback input end and a frequency locking control output end; the frequency scanning module 10 is provided with a scanning signal output end for scanning the laser frequency of the tunable external cavity semiconductor laser 1;
The tunable external cavity semiconductor laser 1, the polarization beam splitter prism 2, the matched lens 3 (the focal length is 100mm), the wavelength meter 4, the single-chip temperature control etalon 5 and the photoelectric detector 6 are arranged on a laser light path emitted by the tunable external cavity semiconductor laser 1; the temperature sensor d in the monolithic temperature control etalon 5 is connected with a temperature feedback monitoring port of the temperature controller 6, and the semiconductor refrigerator e is connected with a temperature control output port of the temperature controller 6; the output end of the photoelectric detector 7 is respectively connected with the input end of the oscilloscope 8 and the feedback input end of the feedback control digital frequency locking module 9; the frequency locking control output end of the feedback control digital frequency locking module 9 is connected with the modulation end of the tunable external cavity semiconductor laser 1; and a scanning signal output end on the frequency scanning module 10 is connected with a frequency scanning input end of the tunable external cavity semiconductor laser 1.
Example 3
The method for continuously tuning and wavelength locking the laser frequency by the system comprises the following steps:
outputting laser light from a tunable external cavity semiconductor laser with the wavelength of 852nm to output line polarized laser light through a wave plate and a polarization beam splitter prism, enabling one path of the output laser light to enter a wavelength meter for wavelength monitoring, enabling the other path of the output laser light to be focused on a single-chip temperature control etalon through a matching lens with the focal length of 100mm, detecting the transmitted laser light by a photoelectric detector, converting the laser light into an electric signal, and monitoring on an oscilloscope;
The frequency scanning module outputs a sawtooth wave scanning signal (20Vpp, 5Hz), the output laser frequency is scanned, and the obtained transmission spectrum signal of the single-chip temperature control etalon is monitored on an oscilloscope. The resulting transmission peak of the monolithic temperature controlled etalon is scanned for laser frequency as shown in fig. 3, so that a full width at half maximum of the transmission peak of about 72MHz can be obtained.
The frequency tuning of the laser can be achieved by changing the free spectral range of the monolithic temperature-controlled etalon:
Figure BDA0003530334120000071
where c is the speed of light, n is the index of refraction of the etalon, d is the thickness (cavity length) of the etalon, and θ is the propagation angle of the laser entering the etalon relative to its surface. In the invention, the free spectral range of the monolithic temperature-controlled etalon calculated by the formula (3) is about 16.3789GHz, and in order to obtain a transmission spectral signal of one free spectral range, the amplitude (40Vpp) of the scanning signal output by the frequency scanning module needs to be increased, so that the scanned laser frequency is wider. FIG. 4 shows the detected free spectral range transmission spectral signal of a monolithic temperature controlled etalon measured at an actual FSR of about 16.25 GHz.
According to the formula (3), the change of the free spectral region is caused by the change of the d, namely the cavity length, in the invention, the temperature of the monolithic temperature control etalon is adjusted by using the temperature controller to change the d, namely the cavity length, so that the linear response of a Free Spectral Region (FSR) with respect to the temperature is caused, and the continuous tunable of the central frequency of the laser is realized; as shown in fig. 5, the relationship between the central wavelength of the transmission laser of the monolithic temperature-controlled etalon and the temperature is linear, the central wavelength of the laser can be tuned at about 2.339 GHz/deg.c with the temperature in the temperature adjusting range of 6.84 deg.c, and the tuning rate of the temperature can reach 0.003 deg.c due to the extremely high temperature adjusting resolution of the temperature controller, so as to improve the tunable resolution of the frequency;
According to the actual wavelength requirement, after the temperature is adjusted to obtain the required laser wavelength, the transmission spectrum signal obtained by the photoelectric detector is fed back to the feedback control digital locking module for modulation, and the laser frequency is locked on the transmission peak of the monolithic temperature control etalon through a PID digital frequency locking system in the module, so that the random frequency locking in the wide frequency range of the laser is realized.
As shown in fig. 6, (a) in fig. 6 is a frequency shift in the laser free running; FIG. 6 (b) is a short term frequency drift condition monitored after the laser is locked to the transmission peak of the monolithic temperature-controlled etalon; fig. 6 (c) shows the long-term frequency drift monitored after the laser is locked to the transmission peak of the monolithic temperature-controlled etalon. The laser frequency drift under free running reaches more than 20MHz, the short-term drift of the laser locked on the transmission peak of the single-chip temperature control etalon is within +/-1 MHz, and the long-term drift is about 4 MHz.
In addition, the drift of the locked laser frequency is reduced by adjusting the PID parameters of the temperature controller and the feedback control digital locking module.
Those matters not described in detail in the present specification are well known in the art to which the skilled person pertains. Although illustrative embodiments of the present invention have been described above to facilitate the understanding of the present invention by those skilled in the art, it should be understood that the present invention is not limited to the scope of the embodiments, and various changes may be made apparent to those skilled in the art as long as they are within the spirit and scope of the present invention as defined and defined by the appended claims, and all matters of the invention which utilize the inventive concepts are protected.

Claims (8)

1. A monolithic temperature-controlled etalon, comprising: the temperature sensor comprises a plano-convex lens (a), a heat conducting shell (b), a temperature sensor (d), a semiconductor refrigerator (e) and a shell (c); the heat conducting shell (b) and the shell (c) are respectively provided with a through hole for laser to pass through, and the plano-convex lens (a) is arranged in the through holes; encapsulated by a housing structure.
2. The monolithic temperature-controlled etalon of claim 1, wherein: the temperature sensor (d) is arranged on the heat conduction shell (b).
3. The monolithic temperature-controlled etalon of claim 1, wherein: the semiconductor refrigerator (e) is embedded into the bottom of the shell (c) and clings to the surface of the heat conducting shell (b).
4. The monolithic temperature-controlled etalon of claim 1, wherein: and dielectric films with the reflectivity of 99.0% are plated on both sides of the plano-convex lens (a).
5. The monolithic temperature-controlled etalon of claim 1, wherein: the material of the plano-convex lens (a) is BK7 glass, the thickness is 6.3 millimeters, and the curvature radius is 40.7 mm.
6. The monolithic temperature-controlled etalon of claim 1, wherein: the heat conduction shell (b) is a red copper heat conduction shell; the temperature sensor (d) is a thermistor temperature sensor; the shell (c) is a heat-insulating shell.
7. A system for locking the frequency of a continuously tunable laser using a monolithic temperature-controlled etalon of claim 1 wherein: the method comprises the following steps: the tunable external cavity semiconductor laser comprises a tunable external cavity semiconductor laser (1), a polarization beam splitter prism (2), a matched lens (3), a wavemeter (4), a single-chip temperature control etalon (5), a temperature controller (6), a photoelectric detector (7), an oscilloscope (8), a feedback control digital frequency locking module (9) and a frequency scanning module (10);
the tunable external cavity semiconductor laser (1) is provided with a frequency scanning input end, a modulation end and a laser output end, and the laser output end is used for emitting laser; the wavelength meter (4) is provided with a laser incident hole, receives laser through the incident hole and monitors the wavelength of the laser; the temperature controller (6) is provided with a temperature feedback monitoring port and a temperature control output port and is used for controlling the temperature of the single-chip temperature control etalon (5); the photoelectric detector (7) is provided with a laser receiving end and a signal output end; the oscilloscope (8) is provided with a signal input end; the feedback control digital frequency locking module (9) is provided with a feedback input end and a frequency locking control output end; the frequency scanning module (10) is provided with a scanning signal output end for scanning the laser frequency of the tunable external cavity semiconductor laser (1);
The tunable external cavity semiconductor laser (1), the polarization beam splitting prism (2), the matching lens (3), the wavelength meter (4), the single-chip temperature control etalon (5) and the photoelectric detector (6) are arranged on a laser light path emitted by the tunable external cavity semiconductor laser (1); a temperature sensor (d) in the single-chip temperature control etalon (5) is connected with a temperature feedback monitoring port of a temperature controller (6), and a semiconductor refrigerator (e) is connected with a temperature control output port of the temperature controller (6); the output end of the photoelectric detector (7) is respectively connected with the input end of the oscilloscope (8) and the feedback input end of the feedback control digital frequency locking module (9); the frequency locking control output end of the feedback control digital frequency locking module (9) is connected with the modulation end of the tunable external cavity semiconductor laser (1); and a scanning signal output end on the frequency scanning module (10) is connected with a frequency scanning input end of the tunable external cavity semiconductor laser (1).
8. A method of continuously tuning and wavelength locking a laser frequency using the locking system of claim 7, wherein:
controlling a tunable external cavity semiconductor laser (1) to output laser, outputting two beams of polarized laser through a polarization beam splitter prism (2), generating two light paths, wherein one path of polarized laser enters a wavelength meter (4) for wavelength monitoring; the other path of polarized laser is focused to the single-chip temperature control etalon (5) through the matched lens (3), and is transmitted into the photoelectric detector (7) from the plano-convex lens (a) on the single-chip temperature control etalon (5); the transmitted laser is detected by a photoelectric detector (7) to obtain a transmission spectrum signal of the single-chip temperature control etalon (5), and the transmission spectrum signal is converted into an electric signal to be monitored on an oscilloscope (8);
The tunable external cavity semiconductor laser (1) outputs laser, and the frequency scanning module (10) outputs sawtooth wave scanning signals to scan the output laser frequency,
the temperature of the single-chip temperature control etalon (5) is regulated and controlled by the temperature controller (6), so that the cavity length of the etalon is regulated and controlled, and the purpose of tuning the transmission laser frequency is achieved;
the transmission spectrum signal obtained by the photoelectric detector (7) is fed back to a feedback control digital frequency locking module (9) for modulation, and the laser frequency is locked to the transmission peak of the single-chip temperature control etalon (5) through a PID digital frequency locking system in the module, so that the frequency locking of the laser is realized; and the drift of the locked laser frequency is reduced by adjusting PID parameters of a temperature controller (6) and a feedback control digital frequency locking module (9).
CN202210203059.5A 2022-03-03 2022-03-03 Single-chip temperature control etalon and locking system and method for tunable laser frequency Pending CN114675688A (en)

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Publication number Priority date Publication date Assignee Title
CN101872933A (en) * 2010-05-31 2010-10-27 清华大学 Semiconductor pumped full-cavity microchip laser device with stable output wavelength
CN103633547A (en) * 2013-12-20 2014-03-12 武汉光迅科技股份有限公司 Wavelength-tunable external cavity laser
CN103986053A (en) * 2014-06-03 2014-08-13 山西大学 Frequency lock system and method of continuous tunable laser
CN105048271A (en) * 2015-08-12 2015-11-11 山西大学 High-stability all-solid-state laser
US9735541B1 (en) * 2014-06-02 2017-08-15 Google Inc. Calibration of external-cavity tunable lasers

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101872933A (en) * 2010-05-31 2010-10-27 清华大学 Semiconductor pumped full-cavity microchip laser device with stable output wavelength
CN103633547A (en) * 2013-12-20 2014-03-12 武汉光迅科技股份有限公司 Wavelength-tunable external cavity laser
US9735541B1 (en) * 2014-06-02 2017-08-15 Google Inc. Calibration of external-cavity tunable lasers
CN103986053A (en) * 2014-06-03 2014-08-13 山西大学 Frequency lock system and method of continuous tunable laser
CN105048271A (en) * 2015-08-12 2015-11-11 山西大学 High-stability all-solid-state laser

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Application publication date: 20220628