CN114665247A - Method for determining transition structure from coplanar waveguide to microstrip line and transition structure - Google Patents

Method for determining transition structure from coplanar waveguide to microstrip line and transition structure Download PDF

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CN114665247A
CN114665247A CN202210242437.0A CN202210242437A CN114665247A CN 114665247 A CN114665247 A CN 114665247A CN 202210242437 A CN202210242437 A CN 202210242437A CN 114665247 A CN114665247 A CN 114665247A
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transition
conduction band
central conduction
coplanar waveguide
microstrip line
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CN114665247B (en
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韩宇南
梁珮云
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Beijing University of Chemical Technology
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
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    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
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Abstract

The application relates to a determination method and a transition structure of a transition structure from a coplanar waveguide to a microstrip line, belonging to the technical field of microwave circuits, wherein the determination method comprises the steps of obtaining performance parameter data of a dielectric substrate; calculating and determining the corresponding relation between the width of a central conduction band and the distance from the central conduction band to a grounding band in a description transition region by adopting an equal characteristic impedance continuous transition mode based on the performance parameter data; and determining a gap structure between the coplanar waveguide and the microstrip line in the transition structure based on the first bi-exponential function relationship represented by the corresponding relationship. The technical scheme of this application compares current notch cuttype transition and oblique line type transition, can realize the transition of coplanar waveguide to microstrip line with lower insertion loss.

Description

Method for determining transition structure from coplanar waveguide to microstrip line and transition structure
Technical Field
The application belongs to the technical field of microwave circuits, and particularly relates to a method for determining a transition structure from a coplanar waveguide to a microstrip line and the transition structure.
Background
With the increasing demand for high-speed multimedia data communication, carrier frequencies are also increasing to the millimeter wave band, and many millimeter wave systems, such as video transmission, wireless local area networks, and wireless ethernet, require highly integrated microwave circuits. Microwave circuits typically include passive devices, active devices, and microwave transmission lines integrated on the same substrate. Microstrip lines and coplanar waveguides (CPW) are important forms of transmission in millimeter-wave integrated circuits. In order to realize the transmission of signals from one transmission line to another transmission line, a microwave transition structure between transmission lines is a key technology, and a low-loss transition technology between coplanar waveguides and microstrip lines with different line widths is typically used.
In the related art, documents "a.m.e.safwat, k.a.zaki, w.johnson and c.h.lee," Novel transmission between differential regulations of planar transmission lines, "in IEEE Microwave and Wireless Components Letters, vol.12, No.4, pp.128-130, April 2002" mention a stepped impedance varistor structure to reduce impedance discontinuity caused by different line widths;
the planar coplanar waveguide to microstrip transition structure mentioned in the documents "g.zheng, j.papamerou, and m.m.tentzeri," Wideband coplanar waveguide RF probe pad to microstrip transitions with out via holes, "IEEE microwire components let, vol.13, No.12, pp.544-546, dec.2003" is a simple diagonal transition;
in the documents "y.c.lee, and c.s.park," a Compact and Low-Radiation CPW Probe Pad Using CBCPW-to-Microstrip Transitions for V-Band LTCC Applications, "IEEE Transitions on Advanced Packaging, vol.30, pp.566-569,2007", in order to suppress transition and back Radiation loss of CBCPW, a through-hole-free CPW Probe Pad Using an edge cutting Pad and CBCPW to Microstrip plane transition is proposed;
in the document "q.jiang, c.domier, and n.c.luhmann," a Ultra wide Low Loss CBCPW-to-Microstrip Transition With Multiple Via Holes, "IEEE Microwave and Wireless Components Letters, vol.24, pp.751-753,2007", a broadband CBCPW to Microstrip Transition is also proposed, which is the placement of vias on the side floor of the CBCPW to suppress the parallel plate resonant mode, thereby reducing radiation Loss.
However, the low-loss transition technology between the coplanar waveguide and the microstrip line with different line widths generally has the problem of large insertion loss, which can increase the system energy consumption, reduce the efficiency, and bring a great burden to the heat dissipation of the device.
The above is only for the purpose of assisting understanding of the technical aspects of the present invention, and does not represent an admission that the above is prior art.
Disclosure of Invention
In order to overcome the problems in the related art at least to a certain extent, the application provides a method for determining a transition structure from a coplanar waveguide to a microstrip line and a transition structure, which are beneficial to realizing the transition from the coplanar waveguide to the microstrip line with low loss in a microwave circuit.
In order to achieve the purpose, the following technical scheme is adopted in the application:
in a first aspect,
the application provides a method for determining a transition structure from a coplanar waveguide to a microstrip line, which comprises the following steps:
acquiring performance parameter data of a dielectric substrate;
calculating and determining the corresponding relation between the width of a central conduction band and the distance from the central conduction band to a grounding band in a description transition region by adopting an equal characteristic impedance continuous transition mode based on the performance parameter data;
and determining a gap structure between the coplanar waveguide and the microstrip line in the transition structure based on the first bi-exponential function relationship represented by the corresponding relationship.
Optionally, the determining a gap structure between the coplanar waveguide and the microstrip line based on the first bi-exponential function relationship represented by the corresponding relationship specifically includes:
determining the structure described by the first bi-exponential function relationship as a gap structure of the coplanar waveguide and the microstrip line in the transition structure;
or aiming at the minimum insertion loss, adjusting and optimizing coefficient parameters in the first bi-exponential function relationship in a simulation mode to obtain a second bi-exponential function relationship representing the corresponding relationship between the width of the central conduction band and the distance from the central conduction band to the grounding band after optimization, and determining the structure described by the second bi-exponential function relationship as a gap structure between the coplanar waveguide and the microstrip line in the transition structure.
Optionally, the process of performing simulation optimization by adjusting and optimizing the coefficient parameter in the first bi-exponential function relationship in a simulation manner with the minimum insertion loss as a target includes:
acquiring position parameter data of edge passing points in the transition region;
and performing simulation optimization by taking the position parameter data as a boundary condition and taking the minimum insertion loss as a target based on the first bi-exponential function relation.
Optionally, the simulation optimization is performed using the HFSS toolkit.
Optionally, the calculating and determining a process of describing a correspondence between a width of the central conduction band and a distance from the central conduction band to the ground band in the transition region includes:
generating a plurality of central conduction band width data and central conduction band-to-ground band distance data corresponding to each central conduction band width data according to the performance parameter data and preset characteristic impedance parameter data based on a characteristic impedance calculation formula of the planar waveguide;
and performing data analysis and fitting according to the width data of each central conduction band and the distance data from each central conduction band to the grounding band, and determining the corresponding relation.
Optionally, the correspondence is shown in the following relational expression:
W＝a×e(b×S)+c×e(d×S)
wherein, W represents the distance between the central conduction band and the grounding band in the transition region, S represents the width of the central conduction band in the transition region, and a, b, c and d represent coefficient parameters of the functional relation represented by the relational expression.
In a second aspect of the present invention,
the present application provides a transition structure from a coplanar waveguide to a microstrip line, the transition structure being determined by the determination method of any one of the above.
Optionally, the gap structure between the coplanar waveguide and the microstrip line in the transition structure is determined by the following bi-exponential function relation description,
W＝a×e(b×S)+c×e(d×S)
wherein, W represents the distance between the central conduction band and the grounding band in the transition region, S represents the width of the central conduction band in the transition region, and a, b, c and d represent coefficient parameters of the functional relation represented by the relational expression.
This application adopts above technical scheme, possesses following beneficial effect at least:
according to the technical scheme, based on performance parameter data of the dielectric substrate, a gap structure between the coplanar waveguide and the microstrip line in the transition structure from the coplanar waveguide to the microstrip line is determined by adopting an equal characteristic impedance continuous transition mode, the gap structure determined by the mode is a continuous linear structure which can be described by a double-exponential function, and compared with the existing step type transition and oblique line type transition, the transition from the coplanar waveguide to the microstrip line can be realized by using lower insertion loss.
Additional advantages, objects, and features of the invention will be set forth in part in the description which follows and in part will become apparent to those having ordinary skill in the art upon examination of the following or may be learned from practice of the invention. The objectives and other advantages of the invention will be realized and attained by the structure particularly pointed out in the written description and claims hereof as well as the appended drawings.
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The accompanying drawings are included to provide a further understanding of the technology or prior art of the present application and are incorporated in and constitute a part of this specification. The drawings expressing the embodiments of the present application are used for explaining the technical solutions of the present application, and should not be construed as limiting the technical solutions of the present application.
Fig. 1 is a schematic flowchart of a method for determining a transition structure from a coplanar waveguide to a microstrip line according to an embodiment of the present application;
fig. 2 is a schematic layout diagram of a transition region from a coplanar waveguide to a microstrip line according to an embodiment of the present application;
fig. 3 is a schematic illustration of structural parameters of a transition structure from a coplanar waveguide to a microstrip line according to an embodiment of the present application.
Detailed Description
In order to make the objects, technical solutions and advantages of the present application more apparent, the technical solutions of the present application will be described in detail below. It is to be understood that the embodiments described are only a few embodiments of the present application and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the examples given herein without making any creative effort, shall fall within the protection scope of the present application.
As described in the background, microstrip lines and coplanar waveguides (CPWs) are important forms of transmission in millimeter-wave integrated circuits. In order to realize the transmission of signals from one transmission line to another transmission line, a microwave transition structure between transmission lines is a key technology, and a low-loss transition technology between coplanar waveguides and microstrip lines with different line widths is typically used.
However, the low-loss transition technology between the coplanar waveguide and the microstrip line with different line widths generally has the problem of large insertion loss, which can increase the system energy consumption, reduce the efficiency, and bring a great burden to the heat dissipation of the device.
In view of the above, the present application provides a method for determining a transition structure from a coplanar waveguide to a microstrip line, which is helpful for implementing low-loss transition from the coplanar waveguide to the microstrip line in a microwave circuit.
As shown in fig. 1, in an embodiment, a method for determining a transition structure from a coplanar waveguide to a microstrip line, provided by the present application, includes the following steps:
step S110, acquiring performance parameter data of the medium substrate;
for example, in a printed circuit board, in which a conductor structure of a certain layer is shown in fig. 2, a dielectric substrate is under the conductor of the layer, and a ground plane formed by a complete metal layer is under the substrate, there is a transition region from the coplanar waveguide to the microstrip line, or from the microstrip line to the coplanar waveguide.
In this step, the performance parameter data of the dielectric substrate is used for subsequent participation in the CPW characteristic impedance calculation, and those skilled in the art will readily understand that the performance parameter data at least includes relevant data such as dielectric constant.
Then, step S120 is carried out, and the corresponding relation between the width of the central conduction band and the distance from the central conduction band to the grounding band in the transition region is calculated and determined by adopting an equal characteristic impedance continuous transition mode based on the performance parameter data;
in step S120 of this embodiment, the corresponding relationship may be calculated and determined based on the existing CPW characteristic impedance calculation formula or by using APPCAD software, where the CPW characteristic impedance calculation formula is shown as the following expression:
Figure BDA0003543012010000061
Figure BDA0003543012010000062
k＝α/β
k3＝tanh(πα/2h)/tanh(πβ/2h)
Figure BDA0003543012010000063
Figure BDA0003543012010000064
in the above expression, Z0Representing characteristic impedance, h represents distance between microstrip line and coplanar waveguide plane and ground, epsilonrDenotes the relative dielectric constant, ε, of the dielectric substrateeffK (k) represents the equivalent dielectric constant, k (k) represents the first elliptical integral, α ═ S/2, β ═ W + S/2, W represents the distance between the central conduction band and the ground band in the transition region, and S represents the central conduction band width in the transition region.
In the technical scheme of the application, the characteristic impedance Z is used0Obtaining the corresponding relation between the width S of the central conduction band and the distance W between the central conduction band and the grounding band by adopting an analytic mode or a numerical simulation mode based on expressions (1) to (3) for keeping the width S of the central conduction band constant;
in view of the aspect of calculation processing efficiency, in this embodiment, a numerical simulation method is used to calculate and determine the corresponding relationship, and specifically, the process includes:
based on the characteristic impedance calculation formula (expressions (1) to (3)) of the planar waveguide, the characteristic impedance is calculated based on the performance parameter data (including the relative dielectric constant ε of the dielectric substrate)rEtc.) and preset characteristic impedance parameter data (e.g., taking Z for example)050 Ω), a number of central conduction band width data (e.g., S) are generated2……Sn) And center conduction band to ground band spacing data (e.g., W) corresponding to each center conduction band width data2……Wn)；
And (3) performing data analysis and fitting (such as fitting processing based on MATLAB) according to the width data of each central conduction band and the distance data from each central conduction band to the grounding band, and determining the corresponding relation, wherein the corresponding relation represents a double-exponential function relation.
Specifically, the correspondence relationship is shown in the following relational expression (4):
W＝a×e(b×S)+c×e(d×S) (4)
in expression (4), W represents the distance from the central conduction band to the ground band in the transition region, S represents the width of the central conduction band in the transition region, and a, b, c and d represent coefficient parameters of the functional relationship represented by the relational expression.
In the expression (4), in the application of actually combining data, the coefficient parameters a, b, c and d are specific numerical values.
Returning to fig. 1, step S130 is finally performed, and based on the first bi-exponential function relationship represented by the corresponding relationship determined in step S120, the gap structure between the coplanar waveguide and the microstrip line in the transition structure is determined.
Specifically, in step S130, the structure described by the first bi-exponential function relationship is determined as the gap structure between the coplanar waveguide and the microstrip line in the transition structure;
it should be noted here that the constant characteristic impedance continuous transition mode is adopted to determine the gap structure between the coplanar waveguide and the microstrip line in the transition structure from the coplanar waveguide to the microstrip line, and the gap structure determined in this mode is a continuous linear structure that can be described by a double-exponential function, so that the transition effect can be achieved with lower insertion loss compared with the existing step-type transition and oblique-line transition (actually, a simulation verification mode is adopted for comparison verification).
Further, the applicant has found that the transition structure determined by the first bi-exponential function directly determined by the equal impedance continuous transition method is not the lowest loss transition mode, and therefore, in step S130, in order to achieve the lowest loss transition, the following optimization may be performed, specifically:
and aiming at minimizing the insertion loss, adjusting and optimizing the coefficient parameters in the first bi-exponential function relationship in a simulation mode (for example, performing simulation optimization by using an HFSS tool software package, wherein the condition that the S parameter S21 of the transmission line is as large as possible) to obtain a second bi-exponential function relationship representing the corresponding relationship between the width of the central conduction band and the distance between the central conduction band and the grounding band after optimization, and determining the structure described by the second bi-exponential function relationship as a gap structure between the coplanar waveguide and the microstrip line in the transition structure.
It should be noted that, in order to improve the processing efficiency of the simulation optimization, as a preferred embodiment, position parameter data of an edge passing point in the transition region may be obtained first, and the position parameter data is used as a boundary condition, so that the simulation optimization is performed based on the first bi-exponential function relationship with the goal of minimizing the insertion loss.
For example, in the coordinate system of the transition region shown in fig. 3 (the left edge of the transition region is the Y axis, and the horizontal bisector of the central conduction band is the X axis), the position parameters of the two edge passing points in the transition region are (0, S)1/2+W1) And (L)1,S2/2+W2) These two boundary conditions are substituted into expression (4), so that the relationship containing four coefficient parameters in expression (4) is converted into a functional relationship containing two parameters, b and d, which is shown in the following expression (5):
Figure BDA0003543012010000081
in expression (5), W represents the distance from the central conduction band to the grounding band in the transition region, S represents the width of the central conduction band in the transition region, b and d represent coefficient parameters of a functional relation represented by the relational expression, and W1，W2，S1，S2The values of the structure parameters for the edge passing points shown in fig. 3.
And further performing simulation optimization based on the expression (5) by taking the minimum insertion loss as a target, determining specific values of b and d, and determining a second bi-exponential function relationship representing the corresponding relationship between the width of the central conduction band and the distance from the central conduction band to the grounding band after optimization, wherein the structure described by the second bi-exponential function relationship is determined as a gap structure between the coplanar waveguide and the microstrip line in the transition structure.
In order to facilitate understanding of the technical solutions of the present application, the technical solutions of the present application will be described below with reference to specific data in an embodiment.
In this example, the dielectric substrate was an FR4 substrate (dielectric constant 4.6, loss tangent 0.02, metal layer 18 microns thick copper) on which a CPW to microstrip line transition was fabricated.
As shown in fig. 2, the fabricated transition consists of a coplanar waveguide region, a CPW to microstrip line transition region, and a microstrip line region. CPW center conduction band width S1And a clearance W1And the width S of the microstrip line2And determining according to a coplanar waveguide characteristic impedance calculation formula. In the transition region, the width of the central conductor is gradually widened to match the width of the microstrip line. In addition, the back surface of the structure is a ground plane. In this configuration, port 1 and port 2 are input and output ports, respectively. The size of the transition plate is 20mm multiplied by 50mm multiplied by 1mm, and the lengths of the coplanar waveguide area, the transition area from the CPW to the micro-strip and the micro-strip line area are all 10 mm.
Table 1 shows the corresponding relationship between W and S calculated according to the CPW characteristic impedance calculation formula
S(mm) 2.096 2 1.9 1.8 1.7 1.6 1.5 1.4 1.3 1.2 1.1 1.048
W(mm) 6.6 3.5 2 1.28 0.9 0.69 0.54 0.44 0.365 0.305 0.256 0.235
Fitting is performed according to the values of S and W shown in table 1, and as a result, W and S satisfy the relationship of a double exponential function, which is shown by the following expression:
W＝0.03861×e1.721×S+1.028×10-7×e8.461×S (6)
in expression (6), W represents the distance from the central conduction band to the ground band in the transition region, and S represents the width of the central conduction band in the transition region.
Referring to the functional relationship shown in expression (6), in order to obtain a better transition mode from CPW to microstrip line, let W and S conform to the double-exponential functional relationship shown in expression (4).
As shown in FIG. 3, the formula derivation is performed according to the conditions of the transition region edge passing point, etc., so as to convert the formula (4) into a relational formula (5) containing a function of two parameters, in this embodiment, S1＝1.048mm、S2＝2.096mm、L1＝10mm、W1＝0.235mm、W2Specific forms of formula (5) herein are shown in formula (7) below, 6.6 mm:
Figure BDA0003543012010000091
constructing a transition structure from CPW to a microstrip line in HFSS by using the relation between W and S shown in the formula (7), and carrying out simulation optimization by taking the minimum insertion loss as a target to obtain an optimized parameter value b which is 1.5; d is 17.4. The resulting transition structure (i.e., the structure described by expression (7) when b is 1.5 and d is 17.4) is the final optimized bi-exponential gap transition.
In an embodiment, the present application further proposes a transition structure from the coplanar waveguide to the microstrip line, the transition structure being determined by the determination method described in any one of the above.
In particular, the gap structure between the coplanar waveguide and the microstrip line in the transition structure is determined by the following description of a double-exponential function relationship,
W＝a×e(b×S)+c×e(d×S)
wherein, W represents the distance between the central conduction band and the grounding band in the transition region, S represents the width of the central conduction band in the transition region, and a, b, c and d represent coefficient parameters of the functional relation represented by the relational expression.
The above description is only a preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present invention are included in the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.

Claims (8)

1. A method for determining a transition structure from a coplanar waveguide to a microstrip line is characterized by comprising the following steps:
acquiring performance parameter data of a medium substrate;
calculating and determining the corresponding relation between the width of a central conduction band and the distance from the central conduction band to a grounding band in a description transition region by adopting an equal characteristic impedance continuous transition mode based on the performance parameter data;
and determining a gap structure between the coplanar waveguide and the microstrip line in the transition structure based on the first bi-exponential function relationship represented by the corresponding relationship.
2. The method according to claim 1, wherein the determining a gap structure between the coplanar waveguide and the microstrip line based on the first bi-exponential function relationship characterized by the correspondence relationship is specifically:
determining the structure described by the first bi-exponential function relationship as a gap structure of the coplanar waveguide and the microstrip line in the transition structure;
or aiming at the minimum insertion loss, adjusting and optimizing coefficient parameters in the first bi-exponential function relationship in a simulation mode to obtain a second bi-exponential function relationship representing the corresponding relationship between the width of the central conduction band and the distance from the central conduction band to the grounding band after optimization, and determining the structure described by the second bi-exponential function relationship as a gap structure between the coplanar waveguide and the microstrip line in the transition structure.
3. The method of claim 2, wherein the adjusting and optimizing the coefficient parameters in the first bi-exponential function relationship in a simulation manner with the minimum insertion loss as a target comprises:
acquiring position parameter data of edge passing points in the transition region;
and performing simulation optimization by taking the position parameter data as a boundary condition and taking the minimum insertion loss as a target based on the first bi-exponential function relation.
4. The method of claim 3, wherein the simulation optimization is performed using an HFSS tool package.
5. The method of claim 1, wherein said computationally determining a procedure describing a correspondence between a width of a central conduction band and a distance from the central conduction band to a ground band in the transition region comprises:
generating a plurality of central conduction band width data and central conduction band-to-ground band distance data corresponding to each central conduction band width data according to the performance parameter data and preset characteristic impedance parameter data based on a characteristic impedance calculation formula of the planar waveguide;
and performing data analysis and fitting according to the width data of each central conduction band and the distance data from each central conduction band to the grounding band, and determining the corresponding relation.
6. The determination method according to claim 1, wherein the correspondence is as shown in the following relational expression:
W＝a×e(b×S)+c×e(d×S)
wherein, W represents the distance between the central conduction band and the grounding band in the transition region, S represents the width of the central conduction band in the transition region, and a, b, c and d represent coefficient parameters of the functional relation represented by the relational expression.
7. A transition structure of coplanar waveguide to microstrip, characterized in that it is determined by the determination method of any one of claims 1 to 6.
8. The transition structure of claim 7, wherein the gap structure between the coplanar waveguide and the microstrip line in the transition structure is defined by the following bi-exponential functional relationship,
W＝a×e(b×S)+c×e(d×S)
wherein, W represents the distance between the central conduction band and the grounding band in the transition region, S represents the width of the central conduction band in the transition region, and a, b, c and d represent coefficient parameters of the functional relation represented by the relational expression.
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CN105895627A (en) * 2016-05-04 2016-08-24 西安电子科技大学 Broadband coplanar waveguide micro-strip bi-node transition structure without through hole
CN105975687A (en) * 2016-05-04 2016-09-28 西安电子科技大学 Method for constructing lumped model of band-pass coplanar waveguide micro-strip through hole-free transition structure

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030214364A1 (en) * 2002-05-16 2003-11-20 Cites Jeffrey S. Broadband uniplanar coplanar transition
US20050116792A1 (en) * 2003-11-29 2005-06-02 Moon Seung E. Microwave tunable device having coplanar waveguide structure
CN102306861A (en) * 2011-05-19 2012-01-04 南京邮电大学 Broadband conversion adapter for coplanar waveguide with shielding backboard and double-sided parallel wire
CN105895627A (en) * 2016-05-04 2016-08-24 西安电子科技大学 Broadband coplanar waveguide micro-strip bi-node transition structure without through hole
CN105975687A (en) * 2016-05-04 2016-09-28 西安电子科技大学 Method for constructing lumped model of band-pass coplanar waveguide micro-strip through hole-free transition structure

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