CN114665241A - Conversion structure and method of artificial surface plasmon and microstrip line - Google Patents
Conversion structure and method of artificial surface plasmon and microstrip line Download PDFInfo
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Abstract
The invention provides a structure and a method for converting artificial surface plasmon to microstrip lines, wherein the structure comprises a metal patch and a transition microstrip line, the metal patch is of a stepped structure with gradually increased width, and the width of the metal patch is the size of the metal patch vertical to the propagation direction of electromagnetic waves; the side with the smaller width of the metal patch is connected with the microstrip line, and the side with the larger width of the metal patch is connected with the transition microstrip line; one side of the transition microstrip line is connected with the metal patch, and the other side of the transition microstrip line is connected with artificial surface plasmon polariton. The invention can realize the mode matching and conversion between the microstrip line and the SSPPs, does not need to introduce any additional metal patch, is convenient for the integration between different devices, has low processing difficulty, compact structure and small size, and can realize the miniaturization of the devices. When the terahertz frequency band is applied to millimeter waves and terahertz frequency bands, the loss is small and the processing difficulty is low.
Description
Technical Field
The invention relates to the technical field of surface plasmas, in particular to a structure and a method for converting an artificial surface plasmon to a microstrip line.
Background
When light is incident on the metal Surface, the light wave couples with free electrons on the metal Surface, so as to generate an electromagnetic wave propagating along the interface between the metal and the medium, which is called Surface Plasmon Polaritons (SPPs). Artificial Surface plasmons (SSPPs) are an analogy of SPPs in the low frequency band (30-150 KHz), which unifies the electromagnetic wave mode in the terahertz band with SPPs in the optical band. Compared with SPPs, SSPPs has the advantage that its dispersion characteristics and ability to confine electromagnetic fields are determined by the geometric parameters of the structure, which usually has a plurality of adjustable geometric variables, so that it can be designed according to different applications, and thus is widely used in passive devices such as transmission lines, power dividers, filters, antennas, etc. In SSPPs, single-sided or double-sided periodically grooved metal strip line structures have the advantage of planarization and are therefore more useful. Such SSPPs have a slow-wave structure and can be used to construct a low-pass filter. However, when a conventional microstrip line is used as a feed line, the SSPPs is different from the microstrip line in wave number at the same frequency, and thus a conversion structure is required to match the microstrip line with the SSPPs.
In the existing structure of conversion between artificial surface plasmon and microstrip line, one structure is as described in document [1], and mode conversion from SSPPs to microstrip line and impedance conversion are realized by increasing the groove depth in the same stepwise gradual change. As the slot depth increases, the confinement of the SSPPs wave by the structure increases gradually, and the impedance decreases gradually from 50 ohms until the matching is achieved by increasing the SSPPs cell size. However, the length of the switching structure reaches a length of about 7 SSPPs unit periods, which is not favorable for miniaturization of the whole device. In addition, the conversion structure is applied to a microwave frequency band, and if the conversion structure is applied to a millimeter wave frequency band and a terahertz frequency band, the loss of the microstrip line cannot be ignored, so that the insertion loss of the conversion structure is large.
In another structure, as described in document [2], in order to reduce the lateral size of the transition structure, two right-angled triangular metal patches and two rectangular metal strips which are symmetrically arranged and form an included angle of 17 ° with the transmission line are used to form the transition structure of the SSPPs and the microstrip line. By analyzing the Transverse and longitudinal electric field distribution of the transition structure, the structure is proved to be capable of converting the quasi-TEM Mode (transition Electromagnetic Mode) of the microstrip line into the TM Mode (transition Magnetic Mode) of the SSPPs. However, this switching structure requires the addition of an additional metal strip structure along the slot direction, which is not conducive to processing and integration of other devices in that direction, and the period size is at least greater than 1 SSPPs. In addition, the conversion structure is applied to a microwave frequency band, and if the conversion structure is applied to a millimeter wave frequency band and a terahertz frequency band, the distance between the metal strip and the microstrip line needs to be very close, so that the processing difficulty can be increased.
The existing conversion structure of the artificial surface plasmon polariton and the microstrip line has large size and not compact enough structure, and has large difficulty in the application technology of millimeter wave and terahertz frequency bands, so that a good effect is difficult to achieve.
Document [1 ]: zhang, g.zhu, l.sun, et al.tracking of surface area corrugated medium with underlying layer ground and manipulating properties propagation [ J ]. Applied Physics Letters,2015,106(2).
Document [2 ]: L.Wang, X.Cui, H.Yang, Z.Du and Y.ZHao.minor Surface plasma strategies Low-Pass Filter With a Novel Transition Structure [ J ]. IEEE Photonics technologies Letters,2019,31(15): 1273-.
Disclosure of Invention
In view of this, embodiments of the present invention provide a structure and a method for converting an artificial surface plasmon to a microstrip line, where the structure does not need to introduce an additional metal patch, is compact, can implement miniaturization of a device, has low loss and low processing difficulty when applied to a millimeter wave and terahertz frequency band, and overcomes the problems in the prior art.
One aspect of the present invention provides a structure for converting an artificial surface plasmon to a microstrip line, the structure comprising a metal patch and a transition microstrip line; the metal patch is of a stepped structure with gradually increased width, and the width of the metal patch is the size of the metal patch vertical to the propagation direction of the electromagnetic waves; the side with the smaller width of the metal patch is connected with the microstrip line, and the side with the larger width of the metal patch is connected with the transition microstrip line; one side of the transition microstrip line is connected with the metal patch, and the other side of the transition microstrip line is connected with artificial surface plasmon polariton.
In some embodiments of the invention, the artificial surface plasmons comprise a plurality of artificial surface plasmon units, the artificial surface plasmon units having a central strip line width and the microstrip line feed line width of the same size.
In some embodiments of the present invention, the metal patch is made of gold and has a thickness of 1 μm.
In some embodiments of the present invention, the step structure of the metal patch comprises at least two steps.
In some embodiments of the present invention, the metal patch is a three-layer equal-length ladder structure.
In some embodiments of the invention, the metal patch is hollow.
In some embodiments of the present invention, the metal patch is attached to a front surface of a dielectric plate, and the material of the dielectric plate is high-resistance silicon.
In some embodiments of the present invention, the back surface of the dielectric plate is covered by a metal ground, and the metal ground is made of metal and has a thickness of 1 μm.
The invention also provides a conversion method of the artificial surface plasmon and microstrip line conversion structure based on any one of the above methods, which is characterized in that: when the electromagnetic wave is propagated to the artificial surface plasmon from the microstrip line, the metal patch receives the electromagnetic wave from the microstrip line and then propagates to the transition microstrip line, and the transition microstrip line propagates the electromagnetic wave to the artificial surface plasmon; when the electromagnetic wave is propagated to the microstrip line from the artificial surface plasmon, the transition microstrip line receives the electromagnetic wave from the artificial surface plasmon and then propagates to the metal patch, and the metal patch propagates the electromagnetic wave to the microstrip line.
The conversion structure of the artificial surface plasmon polariton and the microstrip line realizes mode matching and conversion between the microstrip line and the SSPPs, does not need to introduce any additional metal patches, is convenient for integration between different devices, has low processing difficulty, compact structure and small size, and can realize miniaturization of the devices. When the terahertz frequency band is applied to millimeter waves and terahertz frequency bands, the loss is small and the processing difficulty is low.
Additional advantages, objects, and features of the invention will be set forth in part in the description which follows and in part will become apparent to those having ordinary skill in the art upon examination of the following or may be learned from practice of the invention. The objectives and other advantages of the invention will be realized and attained by the structure particularly pointed out in the written description and drawings.
It will be understood by those skilled in the art that the objects and advantages that can be achieved by the present invention are not limited to the above specific description, and the above effects and other objects that can be achieved by the present invention will be more clearly understood from the following detailed description.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this application, illustrate embodiment(s) of the invention and together with the description serve to explain the principles of the invention. The components in the figures are not necessarily to scale, emphasis instead being placed upon illustrating the principles of the invention. For purposes of illustrating and describing some portions of the present invention, corresponding parts of the drawings may be exaggerated, i.e., may be larger, relative to other components in an exemplary apparatus actually manufactured according to the present invention. In the drawings:
fig. 1 is a plan view of a back-to-back general structure of SSPPs and microstrip line conversion in an embodiment of the invention.
Fig. 2 is a plan view of a back-to-back overall structure and size of the SSPPs and microstrip line conversion in an embodiment of the invention.
Fig. 3 is a schematic structural diagram of a stepped metal sheet of a conversion structure according to an embodiment of the invention.
FIG. 4 is a schematic structural diagram of an SSPPs unit according to an embodiment of the present invention.
FIG. 5 shows dispersion curves of steps, transition structures, microstrip lines and SSPPs units according to an embodiment of the present invention.
FIG. 6 is a distribution diagram of electric field strength vectors at different positions at 170GHz according to an embodiment of the invention.
Fig. 7 shows the back-to-back overall structure S parameters of the SSPPs and microstrip line transformation in an embodiment of the invention.
FIG. 8 shows a transition structure formed by a stepped metal strip according to yet another embodiment of the present invention.
FIG. 9 shows the S parameter of a transition structure comprising a step-shaped metal strip according to yet another embodiment of the present invention.
FIG. 10 shows a transition structure formed by a stepped metal strip according to yet another embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is further described in detail below with reference to the following embodiments and the accompanying drawings. The exemplary embodiments and descriptions of the present invention are provided to explain the present invention, but not to limit the present invention.
It should be noted that, in order to avoid obscuring the present invention with unnecessary details, only the structures and/or processing steps closely related to the scheme according to the present invention are shown in the drawings, and other details not so relevant to the present invention are omitted.
It should be emphasized that the term "comprises/comprising" when used herein, is taken to specify the presence of stated features, elements, steps or components, but does not preclude the presence or addition of one or more other features, elements, steps or components.
It is also noted herein that the term "coupled," if not specifically stated, may refer herein to not only a direct connection, but also an indirect connection in which an intermediate is present.
Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings. In the drawings, the same reference numerals denote the same or similar parts, or the same or similar steps.
The invention provides a structure and a method for converting an artificial surface plasmon into a microstrip line, which aims to solve the problems of large size, low device integration level and difficult application in millimeter wave and terahertz frequency bands of the conventional structure for converting the artificial surface plasmon into the microstrip line.
In the structure for converting the artificial surface plasma and the microstrip line, the conversion structure comprises a metal patch and a transition microstrip line, wherein the metal patch is of a stepped structure with gradually increased width, and the width of the metal patch is the size of the metal patch vertical to the propagation direction of the electromagnetic wave; the side with the smaller width of the metal patch is connected with the microstrip line, and the side with the larger width of the metal patch is connected with the transition microstrip line; one side of the transition microstrip line is connected with the metal patch, and the other side of the transition microstrip line is connected with artificial surface plasmon polariton.
Based on the stepped metal patch, the conversion between the SSPPs and the microstrip line is realized. The width of the stepped metal patch in the propagation direction of electromagnetic waves is small, miniaturization can be achieved, and the SSPPs and the microstrip lines can be matched in wave vector, so that conversion of the SSPPs and the microstrip lines is achieved. The conversion structure can be applied to conversion of SSPPs and microstrip lines of millimeter wave and terahertz frequency bands, and is small in loss and low in processing difficulty.
Fig. 1 is a plan view of a back-to-back general structure of SSPPs and microstrip line conversion in an embodiment of the invention. The area in the figure is a microstrip line feeder line, a conversion structure of the invention, comprises a metal patch and a transition microstrip line, an SSPPs part and an SSPPs unit. The marked six positions A, B, C, D, E and F are sections of the microstrip line, the step 1, the step 2, the step 3, the transition microstrip line and the SSPPs on the xy plane respectively. Wherein the x-y-z axis better expresses the position, the dimensions of the structure and the propagation direction of the electromagnetic wave. In the embodiment of the present invention, the overall structure is symmetrical about the center line of (c), but the symmetry is not necessary, and the purpose is to show the practical use process that the microstrip line is converted into the SSPPs, transmitted on the SSPPs for a period of time, and then converted into the microstrip line in practical use.
In the embodiment of the invention, the metal patch is made of gold and has a thickness of 1 μm. The present embodiment is a preferred embodiment, and the material and thickness of the metal patch can be adjusted according to actual situations, for example, the material of the metal patch is copper, the thickness is 2 μm, and the metal patch can be optimized according to needs in actual design, and an optimal solution is sought through adjustment and testing.
In the embodiment of the invention, the metal patch is of a three-layer equal-length stepped structure. The length of each step of the metal patch refers to the dimension of the metal patch along the electromagnetic wave propagation direction, the width of each step of the metal patch refers to the dimension of the metal patch perpendicular to the electromagnetic wave propagation direction, the embodiment of the invention is a preferred embodiment, the number of steps and the actual width of the metal patch can be adjusted according to actual conditions, for example, the number of steps is changed into 4 steps, and the step length can be adjusted.
In the embodiment of the invention, the metal patch is attached to the front surface of the dielectric plate, the dielectric is high-resistance silicon, the relative dielectric constant is 11.62, the loss tangent is 10-4, and the thickness is 23 μm. FIG. 1 shows a front structure of a dielectric plate, the back of which is covered by a metal ground with a thickness of 1 μm made of gold. The present embodiment is a preferred embodiment, and the dielectric plate can be adjusted to other materials and dimensions, and adjusted according to actual conditions.
Fig. 2 is a plan view of a back-to-back overall structure and dimensions of the SSPPs and microstrip line conversion according to an embodiment of the invention, which is the same as fig. 1 in structure, but with detailed dimensions of each structure labeled. Wherein: is a microstrip line feeder line with width w1Length of l1. ② comprises a step-shaped metal patch and a section of microstrip line. The metal patch consists of three steps, wherein the widths of the steps 1, 2 and 3 are w respectivelys1，ws2，ws3All lengths are ls. The width of the transition microstrip line is w2Length of l2. (iii) a transmission line composed of SSPPs and having a total length of l3. Is an H-shaped SSPPs unit with the size of a, d, H, w3Determining the length of one unit period as d + a x 2 and the width of central strip line as w3Set to be equal to the microstrip line feed line width w1The same, and therefore no additional impedance matching structure is required. The specific dimensions of the structure in fig. 2 are summarized in table 1.
TABLE 1 detailed dimensions (unit: μm) of the overall structure in FIG. 1
It should be noted that the above dimensions are only used as preferred embodiments, and do not limit the dimensions of the present invention, and in the actual production process, the adjustment can be made adaptively according to the difference between the microstrip line and the artificial surface plasmon structure.
In the embodiment of the invention, the artificial surface plasmon comprises a plurality of artificial surface plasmon units, wherein the central strip line width of the artificial surface plasmon unit is the same as the microstrip line feed line width, so that an additional impedance matching structure is not needed.
Fig. 1 shows that the conversion structure includes three steps, which are key components for realizing conversion, and fig. 3 shows a schematic diagram of a step-shaped metal sheet structure of the conversion structure in an embodiment of the present invention. Disassembling the structure II in the figure 1 into (a) a step 1; (b) a step 2; (c) a step 3; (d) the overall switching architecture. Fig. 4 is a schematic diagram of the unit structure of the SSPPs in an embodiment of the present invention, as shown in fig. 4, several unit periods are set as the period d + a × 2(160 μm) of the SSPPs, and the electromagnetic wave is along the opposite direction of the z-axis (i.e. β is along the-z direction, and the same applies when β is along the + z direction). Preferably, the length of the switching structure of the embodiment of the present invention is 135 μm, the length of the SSPPs unit period is 160 μm, and the length of the switching structure is only 0.84 SSPPs unit periods. The stepped SSPPs and microstrip line conversion structure provided by the invention has a compact structure, the length of the conversion structure is shortened, and lower loss can be obtained in millimeter wave and terahertz frequency bands.
From the followingThe angle of the dispersion curve illustrates the working principle of this conversion structure. The dispersion curves of the SSPPs cells, microstrip lines, steps 1, 2, 3, overall transition structure are plotted in fig. 5 using the HFSS eigenmode for the solution. As shown in fig. 5, at the same frequency, the phase shift constant of the microstrip line is smaller than SSPPs (the phase shift constant is used to represent the phase shift value of the electromagnetic wave along the uniform line per unit length), so the modes between the two are not matched. The steps 1, 2 and 3 gradually increase the phase shift constant of the microstrip line, and finally the phase shift constant of the overall conversion structure is close to the step 3. The stepped conversion structure can increase the phase shift constant of the microstrip line, and meanwhile, the phase shift constant does not change suddenly but changes gradually through steps, so that matching between the microstrip line and the SSPPs can be realized. In addition, the width of the access after the optimization step is w2Length of l2The transition microstrip line can further improve the matching effect of the conversion structure and the SSPPs. The width and length of the steps 1, 2, 3 can be optimized for different SSPPs structures, and the values given in table 1 are only by way of example.
As can be seen from the dispersion curve shown in fig. 5, in the process from the microstrip line to the step 1, the step 2, the step 3, and the transition microstrip line (as can be seen from the dispersion curve passing through the overall conversion structure), the electromagnetic wave is transmitted along the z-axis in the opposite direction, and the dispersion curve approaches the dispersion curve of the SSPPs more and more.
The working principle of this switching structure is explained below from the angle of the electric field distribution. FIG. 6 is a distribution diagram of electric field strength vectors at different positions at 170GHz according to an embodiment of the invention. The five positions of A, B, C, D and F are sections of the microstrip line, the step 1, the step 2, the step 3 and the SSPPs on the xy plane respectively, the picture is gray scale display, the approaching white is an area with larger electric field intensity, and the black is an area with smaller electric field intensity. The distribution of the electric field strength vector at 170GHz for these five positions is available in HFSS, with the electric field strength being on a uniform scale, as shown in fig. 6. The microstrip line at the section A propagates a quasi-TEM mode, and an electric field is mainly concentrated near the metal strip; while in the SSPPs the electric field is concentrated at both edges in the y-direction at the cross section F. In the process of step B → C → D, the electric field gradually approaches the electric field distribution of SSPPs from the microstrip line, so that the mode conversion can be realized.
In the embodiment of the present invention, due to the dispersion curve characteristic of SSPPs, the overall structure has a low-pass filtering characteristic, and to verify the characteristic, S parameter (Scatter parameter) is used to describe the frequency domain characteristic of the transmission channel. Fig. 7 shows the back-to-back overall structure S parameters of the SSPPs and microstrip line transformation in an embodiment of the invention. Wherein the bandwidth of S11< -10dB is 86-169.5GHz (65.36%), the average S21 in the band is-1.17 dB, S11 is the input reflection coefficient, namely the input return loss, and S21 is the forward transmission coefficient. The low-frequency signal can normally pass through, and the high-frequency signal exceeding a set critical value (such as 170GHz) is blocked and weakened, so that the low-pass filtering characteristic of the overall structure is verified.
In some embodiments of the present invention, each step of the step structure of the metal patch is a rectangular structure or a trapezoidal structure, as shown in fig. 8 and 10.
In some embodiments of the present invention, the step structure of the metal patch in the conversion structure comprises at least two steps.
In the embodiment of the present invention, as shown in fig. 1 and fig. 2, the metal patches in the conversion structure are three layers of ladder-shaped structures with equal length.
In some embodiments of the present invention, the number of the steps is not necessarily 3, and the 3 steps are selected to minimize the length of the transition segment in the case of matching, so that the structure is more compact. And the steps of the metal patch are not necessarily equal in length, and the metal patch can be designed according to actual conditions.
In some embodiments of the present invention, the structure of the metal patch may be hollow, as shown in FIG. 8, FIG. 9 is the S parameter of the switching structure of FIG. 8, and the S11< -10dB bandwidth is 85-167.2GHz, which also demonstrates its low pass filtering characteristics.
The invention also provides a conversion method of the artificial surface plasmon and microstrip line conversion structure based on any one of the above methods, which is characterized in that: when the electromagnetic wave is propagated to the artificial surface plasmon from the microstrip line, the metal patch receives the electromagnetic wave from the microstrip line and then propagates to the transition microstrip line, and the transition microstrip line propagates the electromagnetic wave to the artificial surface plasmon; when the electromagnetic wave is propagated to the microstrip line from the artificial surface plasmon polariton, the transition microstrip line receives the electromagnetic wave from the artificial surface plasmon polariton and then propagates to the metal patch, and the metal patch propagates the electromagnetic wave to the microstrip line.
Because the phase shift constant of the artificial surface plasmon is higher than that of the microstrip line, the stepped structure of the metal patch can increase the phase shift constant of the electromagnetic wave from the microstrip line along with the increasing of the step width, or reduce the phase shift constant of the electromagnetic wave from the artificial surface plasmon along with the decreasing of the step width, and the transition microstrip line plays a role in transition, so that the microstrip line and the artificial surface plasmon are more adaptive to the transformation of the electromagnetic wave transmission mode.
In one embodiment of the invention, when electromagnetic waves propagate along the opposite direction of the z axis, the left side of the first step is provided with a port 1, energy is fed into a microstrip line, the energy enters a conversion structure of the second step, is converted into a mode of SSPPs after passing through a stepped metal patch and a section of microstrip line, then enters the third step, enters the conversion structure of the second step, is converted into a mode of the microstrip line after passing through a section of microstrip line and the stepped metal patch, and finally enters the first step and is output from a port 2 on the right side. The electromagnetic wave propagating in the positive z direction is exactly the same as described above. As can be seen from fig. 3, as the step height increases, the phase shift constant of the cell increases accordingly. The microstrip line needs to be matched with the SSPPs with a high phase shift constant in the conversion structure, so that the phase shift constant needs to be continuously increased in the matching structure, that is, the step heights are sequentially increased. The size and proportion of the conversion structure (II) can be optimized according to simulation. When the electromagnetic wave propagates along the z-axis direction, the SSPPs are converted into the microstrip line, and the method is the same.
It is to be understood that the invention is not limited to the specific arrangements and instrumentality described above and shown in the drawings. A detailed description of known methods is omitted herein for the sake of brevity. In the above embodiments, several specific steps are described and shown as examples. However, the method processes of the present invention are not limited to the specific steps described and illustrated, and those skilled in the art can make various changes, modifications and additions or change the order between the steps after comprehending the spirit of the present invention.
Features that are described and/or illustrated with respect to one embodiment may be used in the same way or in a similar way in one or more other embodiments and/or in combination with or instead of the features of the other embodiments in the present invention.
The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention, and various modifications and changes may be made to the embodiment of the present invention by those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (10)
1. A conversion structure of artificial surface plasmon and microstrip lines is characterized in that the conversion structure comprises a metal patch and a transition microstrip line;
the metal patch is of a stepped structure with gradually increased width, and the width of the metal patch is the size of the metal patch perpendicular to the propagation direction of the electromagnetic waves;
the side with the smaller width of the metal patch is connected with the microstrip line, and the side with the larger width of the metal patch is connected with the transition microstrip line;
one side of the transition microstrip line is connected with the metal patch, and the other side of the transition microstrip line is connected with artificial surface plasmon polariton.
2. The structure of claim 1, wherein the artificial surface plasmon comprises a plurality of artificial surface plasmon units, and the central strip line width of the artificial surface plasmon unit is the same as the microstrip line feed line width.
3. The structure of claim 1, wherein the metal patch is made of gold and has a thickness of 1 μm.
4. The structure of claim 1, wherein the step structure of the metal patch comprises at least two steps.
5. The structure of claim 4, wherein the metal patch is a three-layer ladder structure with equal length.
6. The structure of claim 5, wherein the metal patch is hollow.
7. The structure for converting an artificial surface plasmon and a microstrip line according to claim 1, wherein the metal patch is attached to the front surface of the dielectric slab, and the dielectric slab is made of high-resistance silicon.
8. The structure of claim 6, wherein the back surface of the dielectric slab is covered by a metal ground, the metal ground is made of metal and has a thickness of 1 μm.
9. The structure of claim 1, wherein each step of the stepped structure of the metal patch is a rectangular structure or a trapezoidal structure.
10. A conversion method based on the conversion structure of the artificial surface plasmon and microstrip line according to any of claims 1-9,
when the electromagnetic wave is propagated to the artificial surface plasmon from the microstrip line, the metal patch receives the electromagnetic wave from the microstrip line and then propagates to the transition microstrip line, and the transition microstrip line propagates the electromagnetic wave to the artificial surface plasmon;
when the electromagnetic wave is propagated to the microstrip line from the artificial surface plasmon polariton, the transition microstrip line receives the electromagnetic wave from the artificial surface plasmon polariton and then propagates to the metal patch, and the metal patch propagates the electromagnetic wave to the microstrip line.
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| 张剑雄: "《新型表面等离子激元传输线及其器件的研究》", 《中国优秀博硕士学位论文全文数据库(硕士)信息科技辑》 * |
| 赵帅杰: "《基于基片集成波导的SSPP带通滤波器设计》", 《中国优秀博硕士学位论文全文数据库(硕士)信息科技辑》 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115939717A (en) * | 2022-10-31 | 2023-04-07 | 电子科技大学 | Terahertz planar waveguide magic T based on novel transmission line load |
| CN115939717B (en) * | 2022-10-31 | 2024-03-29 | 电子科技大学 | Terahertz planar waveguide magic T based on novel transmission line load |
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