CN114664552A - Based on SmCo5Method for obtaining significant terahertz magnetic permeability through permanent magnet film - Google Patents
Based on SmCo5Method for obtaining significant terahertz magnetic permeability through permanent magnet film Download PDFInfo
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- CN114664552A CN114664552A CN202210193898.3A CN202210193898A CN114664552A CN 114664552 A CN114664552 A CN 114664552A CN 202210193898 A CN202210193898 A CN 202210193898A CN 114664552 A CN114664552 A CN 114664552A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/02—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets
- H01F41/0253—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets for manufacturing permanent magnets
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F1/00—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties
- H01F1/01—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials
- H01F1/03—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity
- H01F1/032—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity of hard-magnetic materials
- H01F1/04—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity of hard-magnetic materials metals or alloys
- H01F1/047—Alloys characterised by their composition
- H01F1/053—Alloys characterised by their composition containing rare earth metals
- H01F1/055—Alloys characterised by their composition containing rare earth metals and magnetic transition metals, e.g. SmCo5
- H01F1/0551—Alloys characterised by their composition containing rare earth metals and magnetic transition metals, e.g. SmCo5 in the form of particles, e.g. rapid quenched powders or ribbon flakes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F7/00—Magnets
- H01F7/02—Permanent magnets [PM]
- H01F7/0205—Magnetic circuits with PM in general
- H01F7/021—Construction of PM
- H01F7/0215—Flexible forms, sheets
Abstract
The invention provides a method based on SmCo5A method for obtaining significant terahertz magnetic conductivity by a permanent magnetic film belongs to the technical field of terahertz and comprises the following steps of carrying out a pair of CaCu5SmCo of type structure5Applying an external magnetic field to the permanent magnetic film along any direction, and then gradually reducing the external magnetic field to 0 to enable SmCo5The permanent magnetic film is in a specific residual magnetization state and is vertical to SmCo5Applying a gradually attenuated perturbation field in the direction of the magnetic moment of the permanent magnetic film to obtain the obvious terahertz magnetic permeability near 1THz, namely the real part mu 'of the magnetic permeability'>1, magnetic permeability imaginary part mu ">0.5. The invention controls SmCo5The thickness and the length-width ratio of the permanent magnetic film and the direction and the size of an applied external magnetic field change the residual magnetization state to regulate and control the terahertz magnetic spectrum, realize the obvious terahertz magnetic conductivity near 1THz, and do not need to apply the external magnetic fieldDue to the design of the artificial metamaterial, the manufacturing process of the terahertz device material is simplified, the cost is reduced, and the terahertz device material has extremely high application potential.
Description
Technical Field
The invention belongs to the technical field of terahertz, and particularly relates to a terahertz based on SmCo5The method for obtaining the obvious terahertz magnetic conductivity by the permanent magnetic film.
Background
CaCu5SmCo of type structure5The permanent magnetic material is the earliest discovered rare earth permanent magnetic material, the atomic percent of Sm atoms is about 17%, and the Sm atoms are very high in Sm concentrationMagnetocrystalline anisotropy (11 to 20X 10)7erg/cm3) Curie temperature (1000K) and magnetic energy product (maximum greater than 300 kJ/m)3) The rare earth permanent magnet material has excellent magnetic performance, opens a new era of rare earth permanent magnet materials, and is called as a first generation rare earth permanent magnet material. In recent years, researches show that SmCo is prepared by sputtering different substrates5The film can control the magnetic properties such as magnetocrystalline anisotropy, such as SmCo by using Cu substrate5The grains grow preferentially in the direction perpendicular to the film surface, and a film having perpendicular magnetocrystalline anisotropy (Takei S, Uemizu T, Morisako A, et al]Journal of the magnetic Society of Japan,2004,28:364 ℃ 367.), and the coercive force Hc, saturation magnetization Ms, etc. are changed, which is very important for the fields of high density storage and high frequency devices (Sayama J, Asahi T, Mizutani K, et al5 thin film with perpendicular magnetic anisotropy[J].Journal of Physics D:Applied Physics,2004,37(1):L1-L4.)。
Terahertz (THz) waves are special frequency bands located between a microwave frequency band and an infrared band, the frequency is in the range of 0.1 to 10THz (1THz is 1000GHz), and the Terahertz (THz) waves have certain properties of the microwave and the infrared waves and have very large application potential in the fields of communication, security inspection, medical treatment and the like (Mittleman D M.Perfective: Terahertz science and technology [ J ]]Journal of Applied Physics,2017,122(23). At present, the terahertz device mainly takes artificial metamaterials as main materials. The artificial metamaterial is a material with a certain periodic structure prepared by a certain technical means, such as an open-ended resonant ring (SRRs) periodic array made of Au, and the terahertz magnetic permeability (Linden S, Enkrinc, Wegener M, et al. magnetic resonance of metals at 100terahertz [ J ] is realized by means of an inductance-capacitance resonance effect]Science,2004,306(5700), 1351-3), the resonance frequency of its permeability is above 1 THz. Compared with natural magnetic materials, the artificial metamaterial has the advantages of complex manufacturing process and higher cost. However, according to the previous research experience, the natural magnetic material has no significant magnetic permeability in the terahertz frequency band and is represented as a real part of the magnetic permeabilityμ' is 1, and the imaginary permeability μ "is almost 0. Therefore, the patent provides a CaCu based on no artificial metamaterial design5Permanent magnetic material SmCo with shaped structure5And a method for obtaining remarkable terahertz magnetic permeability near 1 THz.
Disclosure of Invention
In view of the above-mentioned problems in the prior art, the present invention provides a SmCo-based solution5The method for obtaining the significant terahertz permeability of the permanent magnetic film can realize the significant terahertz permeability near 1THz without artificial metamaterial design.
The specific technical scheme of the invention is as follows:
based on SmCo5The method for obtaining the obvious terahertz magnetic conductivity of the permanent magnetic film is characterized in that CaCu is subjected to5SmCo of type structure5The permanent magnetic film applies an external magnetic field H along any direction, and then the external magnetic field H is gradually reduced to 0 to enable the SmCo to be smooth5The permanent magnetic film is in a residual magnetization state, magnetic moments are distributed in parallel along the easy axis direction at the moment, and the magnetic moments are perpendicular to SmCo under the state5Applying a gradually attenuated perturbation field in the orientation direction of the magnetic moment of the permanent magnetic film to obtain the obvious terahertz magnetic permeability near 1THz, namely the real part mu 'of the magnetic permeability'>1, magnetic permeability imaginary part mu ">0.5。
Further, the SmCo5Magnetocrystalline anisotropy energy H of permanent magnet filmkIs 5.11X 106～1.78×107Oe, shape anisotropy energy HsIs 3.02 multiplied by 103～1.05×104Oe, saturation magnetization MsIs 2.4X 105～8.36×105A/m。
Further, when an external magnetic field is applied in any direction to obtain a remanent magnetization state, it is required that: when SmCo is crossed5When an external magnetic field H is applied in the in-plane direction of the permanent magnetic film, the maximum value of the external magnetic field is not lower than the in-plane magnetization saturation external magnetic field Hs⊥2/5 of (1); when SmCo is crossed5When an external magnetic field is applied to the permanent magnet film in the out-of-plane direction, the maximum value of the external magnetic field is not lower than the out-of-plane magnetization saturation external magnetic field Hs//4/5 of (1).
Further, by controlling the SmCo5Thickness, aspect ratio and application of permanent magnet filmAnd the direction and the size of an external magnetic field are added to change the residual magnetization state, so that the terahertz magnetic permeability is regulated and controlled.
The invention has the beneficial effects that:
the invention provides a method based on SmCo5Method for obtaining obvious terahertz magnetic conductivity by permanent magnetic film by controlling SmCo5The thickness and the length-width ratio of the permanent magnetic film and the direction and the size of an applied external magnetic field change the residual magnetization state to regulate and control the terahertz magnetic spectrum, so that the significant terahertz magnetic conductivity near 1THz is realized, the artificial metamaterial design is not needed, the manufacturing process of the terahertz device material is simplified, the cost is reduced, and the terahertz device has extremely high application potential.
Drawings
FIG. 1 shows SmCo according to example 1 of the present invention5The external magnetic field applying direction of the permanent magnetic film;
FIG. 2 shows the results of the present invention on SmCo in example 15Applying an external magnetic field H to the permanent magnetic film to obtain a magnetization curve of a residual magnetization state; wherein (a) is in-plane direction (y-direction) and (b) is in out-of-plane direction (z-direction);
FIG. 3 shows the results of the present invention on SmCo in example 15Applying an external magnetic field H to the permanent magnetic film to obtain a terahertz magnetic spectrum of a residual magnetization state; wherein (a) is in-plane direction (y-direction) and (b) is in out-of-plane direction (z-direction);
FIG. 4 shows SmCo according to example 2 of the present invention5Magnetic moment distribution and terahertz magnetic spectrum of the permanent magnetic film in a natural magnetization state (an external magnetic field is 0); wherein, (a) is magnetic moment distribution, and (b) is terahertz magnetic spectrum;
FIG. 5 shows SmCo according to example 2 of the present invention5The maximum value of the external magnetic field H of the permanent magnet film is 2/5 in-plane magnetization saturation external magnetic field Hs⊥Magnetic moment distribution and terahertz magnetic spectrum of the residual magnetization state obtained in the next step; wherein, (a) is magnetic moment distribution, and (b) is terahertz magnetic spectrum;
FIG. 6 shows SmCo according to example 2 of the present invention5The maximum value of the external magnetic field of the permanent magnetic film is the in-plane magnetization saturation external magnetic field Hs⊥Magnetic moment distribution and terahertz magnetic spectrum of the residual magnetization state are obtained; wherein, (a) is magnetic moment distribution, and (b) is terahertz magnetic spectrum；
FIG. 7 shows SmCo with an aspect ratio of 2 according to example 3 of the present invention5A terahertz magnetic spectrum of the permanent magnetic film in a residual magnetization state;
FIG. 8 shows SmCo with aspect ratio of 4 according to example 3 of the present invention5A terahertz magnetic spectrum of the permanent magnetic film in a residual magnetization state;
FIG. 9 shows SmCo with a thickness of 10nm as proposed in example 4 of the present invention5A terahertz magnetic spectrum of the permanent magnetic film in a residual magnetization state;
FIG. 10 shows SmCo with a thickness of 50nm as proposed in example 4 of the present invention5And the terahertz magnetic spectrum of the permanent magnetic film in the residual magnetization state.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention will be further described with reference to the following embodiments and the accompanying drawings.
SmCo used in the examples described below5The magnetocrystalline anisotropy of the permanent magnetic film is 4.07 x 105Oe, shape anisotropy property as a function of material geometry, the range of values being: 3.02X 103～1.05×104With the unit of Oe, the saturation magnetization of 8.36X 105A/m。
Example 1
SmCo used in the present example5The length of the permanent magnetic film is 200nm, the width of the permanent magnetic film is 200nm, and the thickness of the permanent magnetic film is 30 nm.
The present example provides a solution based on SmCo as described above5The method for obtaining the significant terahertz magnetic permeability by the permanent magnetic film specifically comprises the following steps: for SmCo5Applying an external magnetic field H to the permanent magnetic film, specifically: first gradually increases along the in-plane (Hy direction shown in FIG. 1) or out-of-plane (Hz direction shown in FIG. 1) direction to correspond to the in-plane magnetization saturation external magnetic field Hs⊥Or out-of-plane magnetization saturation external magnetic field Hs//Then reducing the applied external magnetic field H to 0; the magnetization curves in the in-plane and out-of-plane directions are shown in FIGS. 2(a) and 2(b), respectively, to obtain SmCo5The residual magnetization state of the permanent magnetic film, and the magnetic moments are distributed in parallel along the easy axis direction at the moment; then perpendicular to SmCo5Direction of magnetic moment of permanent-magnet filmAnd adding a perturbation field which is gradually attenuated to obtain a terahertz magnetic spectrum.
FIG. 3 shows SmCo5Terahertz magnetic spectrum of the residual magnetization state of the permanent magnetic film. From the terahertz magnetic spectrum of the remanent magnetization state obtained by applying the external magnetic field H in the in-plane direction in fig. 3(a), SmCo can be known5The permanent magnetic film has obvious magnetic response and real magnetic permeability part mu 'at 1.133 THz'>1, the imaginary part mu' of magnetic permeability is 0.5235; when the external magnetic field H direction is adjusted to the out-of-plane direction, the resonance frequency is shifted to the left of 1.125THz and the real part of permeability μ 'as seen from the terahertz magnetic spectrum in the remanent magnetization state in FIG. 3 (b)'>1 and an imaginary part mu' of magnetic permeability is 0.6253.
Example 2
SmCo used in the present example5The length of the permanent magnetic film is 200nm, the width of the permanent magnetic film is 200nm, and the thickness of the permanent magnetic film is 30 nm.
The present example provides a solution based on SmCo as described above5The method for obtaining the significant terahertz magnetic permeability by the permanent magnetic film specifically comprises the following steps: for SmCo5The permanent magnetic film applies an external magnetic field H along the in-plane direction, and the method specifically comprises the following steps: gradually increases to Hs⊥Or H saturated with 2/5s⊥Then, the external magnetic field H is reduced to 0; at this time, SmCo5The permanent magnetic film is in the residual magnetization state and is vertical to SmCo5And applying a gradually attenuated perturbation field to the direction of the magnetic moment of the permanent magnetic film to obtain a terahertz magnetic spectrum.
As a comparative example, SmCo was not used5The permanent magnetic film applies an external magnetic field (the external magnetic field is 0) along the in-plane direction to ensure that the SmCo is subjected to surface treatment5The permanent magnetic film is in a spontaneous magnetization state, i.e. O point in figure 2(b), along a direction perpendicular to SmCo5And applying a gradually attenuated perturbation field to the direction of the magnetic moment of the permanent magnetic film to obtain a terahertz magnetic spectrum.
FIG. 4 shows SmCo5Magnetic moment distribution and terahertz magnetic spectrum of the permanent magnetic film in the O point residual magnetization state. From the magnetic moment distribution shown in FIG. 4(a), SmCo is known5The magnetic moment distribution of the permanent magnetic film is disordered, and in combination with the terahertz magnetic spectrum shown in fig. 4(b), it can be known that a relatively wide resonance peak exists only at 0.26THz, but no significant magnetic response exists near 1THz, and the magnetic response is shown that the real part μ' of the magnetic permeability is close to 1, and the imaginary part μ ″ of the magnetic permeability is almost 0.
FIG. 5 shows SmCo5The maximum value of the external magnetic field H of the permanent magnetic film is 2/5Hs⊥And then obtaining the magnetic moment distribution of the remanent magnetization state and a terahertz magnetic spectrum. From the magnetic moment distribution shown in FIG. 5(a), SmCo is known5The magnetic moment distribution of the permanent magnetic film is regularly distributed, and it is known that the magnetic response and the real part of the magnetic permeability μ 'only occur at 1.142THz in combination with the terahertz magnetic spectrum shown in fig. 5 (b)'>1, magnetic permeability imaginary part mu ">And 0.3, magnetic response under other frequencies is inhibited, and different residual magnetization states can be obtained by controlling the maximum value of the external magnetic field, so that the terahertz magnetic response can be regulated and controlled.
FIG. 6 shows SmCo5The maximum value of the external magnetic field H of the permanent magnetic film is Hs⊥And magnetic moment distribution and terahertz magnetic spectrum of the residual magnetization state are obtained. From the magnetic moment distribution shown in FIG. 6(a), SmCo is known5The magnetic moment distribution of the permanent magnetic film is more regular, and the terahertz magnetic spectrum shown in FIG. 5(b) shows that obvious magnetic response appears at 1.133THz and the real part mu 'of magnetic permeability'>1, magnetic permeability imaginary part mu ">0.5, the requirement of obvious terahertz magnetic permeability of the patent is met.
Example 3
SmCo used in this example5The width of the permanent magnetic film is 100nm, and the thickness of the permanent magnetic film is 30 nm.
The present example provides a solution based on SmCo as described above5The method for obtaining the significant terahertz magnetic permeability by the permanent magnetic film specifically comprises the following steps: for SmCo with lengths of 200nm (aspect ratio of 2) and 400nm (aspect ratio of 4)5The permanent magnetic film applies an external magnetic field H along the in-plane direction, and specifically comprises the following steps: gradually increasing to magnetization saturation external magnetic field Hs⊥Then, the external magnetic field H is reduced to 0; at this time, corresponds to SmCo5The permanent magnetic film is in the residual magnetization state and is vertical to SmCo5And applying a gradually attenuated perturbation field to the direction of the magnetic moment of the permanent magnetic film to obtain a terahertz magnetic spectrum.
From SmCo with an aspect ratio of 2 as shown in FIG. 75The terahertz magnetic spectrum in the residual magnetization state of the permanent magnetic film shows that the terahertz magnetic spectrum has obvious magnetic response and real magnetic permeability part mu 'at the position of 1.127 THz'>1, imaginary μ "is 0.619; SmCo with aspect ratio of 4 shown in FIG. 85Residual magnetization state of permanent magnetic filmTerahertz spectrum under (1.135 THz) showing the appearance of a significant magnetic response, the real part of permeability mu'>1, and the imaginary part mu is 0.522, and both have the characteristic of the "significant terahertz permeability" described in the patent.
Example 4
SmCo used in the present example5The length of the permanent magnetic film is 200nm, and the width of the permanent magnetic film is 200 nm.
The present example provides a solution based on SmCo as described above5The method for obtaining the significant terahertz magnetic permeability by the permanent magnetic film specifically comprises the following steps: for SmCo with the thickness of 10nm and 50nm5The permanent magnetic film applies an external magnetic field H along the in-plane direction, and the method specifically comprises the following steps: gradually increases to Hs⊥Then, the external magnetic field H is reduced to 0; at this time, corresponds to SmCo5The permanent magnetic film is in the residual magnetization state and is vertical to SmCo5And applying a gradually attenuated perturbation field to the direction of the magnetic moment of the permanent magnetic film to obtain a terahertz magnetic spectrum.
Formed of SmCo with a thickness of 10nm as shown in FIG. 95The resonance frequency of the terahertz magnetic spectrum in the residual magnetization state of the permanent magnetic film is 1.125THz, and the real part mu of the magnetic permeability'>1, imaginary μ "is 0.5358; the terahertz magnetic spectrum shown in FIG. 10 shows that the resonance frequency is increased to 1.138GHz and the real part of permeability μ 'when the thickness is increased to 50 nm'>1, the imaginary part mu is 0.5216, and the characteristic of 'obvious terahertz magnetic permeability' of the patent is satisfied.
In summary, the present invention provides SmCo-based compositions5The method for obtaining the obvious terahertz magnetic conductivity by the permanent magnetic film. SmCo5The magnetic moment distribution of the permanent magnetic film in a spontaneous magnetization state (the external magnetic field is 0T) is disordered, and the magnetic spectrum only has a relatively wide and irregular formant near 0.26 THz; and by changing the magnitude of the external magnetic field and controlling the residual magnetization state, a single and remarkable magnetic response can be obtained around 1 THz. Meanwhile, SmCo can be controlled5The terahertz magnetic permeability of the permanent magnetic film is controlled by the shape (length-width ratio or thickness) of the permanent magnetic film and the size and direction of an external magnetic field. Compared with the method for obtaining the magnetic conductivity of 1THz by using the artificial metamaterial, the method simplifies the process flow, can be repeatedly used and prolongs the service life of the material.
Claims (4)
1. Based on SmCo5The method for obtaining the obvious terahertz magnetic conductivity of the permanent magnetic film is characterized in that CaCu is subjected to5SmCo of type structure5Applying an external magnetic field to the permanent magnetic film along any direction, and then gradually reducing the external magnetic field to 0 to enable SmCo5The permanent magnetic film is in a residual magnetization state in which the film is perpendicular to SmCo5Applying a gradually attenuated perturbation field in the orientation direction of the magnetic moment of the permanent magnetic film to obtain the obvious terahertz magnetic permeability near 1THz, namely the real part mu 'of the magnetic permeability'>1, magnetic permeability imaginary part mu ">0.5。
2. SmCo-based according to claim 15The method for obtaining the significant terahertz magnetic permeability by using the permanent magnetic film is characterized in that the SmCo is5Magnetocrystalline anisotropy energy H of permanent magnet filmkIs 5.11X 106～1.78×107Oe, shape anisotropy energy HsIs 3.02 multiplied by 103～1.05×104Oe, saturation magnetization MsIs 2.4X 105～8.36×105A/m。
3. SmCo-based compositions according to claim 15The method for obtaining the significant terahertz magnetic permeability by the permanent magnetic film is characterized in that the method requires that an external magnetic field is applied along any direction to obtain a residual magnetization state: when SmCo is crossed5When an external magnetic field is applied in the in-plane direction of the permanent magnetic film, the maximum value of the external magnetic field is not lower than the in-plane magnetization saturation external magnetic field Hs⊥2/5 of (1); when SmCo is crossed5When an external magnetic field is applied to the permanent magnet film in the out-of-plane direction, the maximum value of the external magnetic field is not lower than the out-of-plane magnetization saturation external magnetic field Hs//4/5 of (1).
4. SmCo-based compositions according to claim 15The method for obtaining the significant terahertz magnetic permeability by the permanent magnetic film is characterized in that the SmCo is controlled5The thickness and the length-width ratio of the permanent magnetic film and the direction and the size of an applied external magnetic field change the residual magnetization state, and further regulate and control the terahertz magnetic permeability.
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