CN114660132A - Display panel, manufacturing method thereof, display device and detection method - Google Patents
Display panel, manufacturing method thereof, display device and detection method Download PDFInfo
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- CN114660132A CN114660132A CN202210298890.3A CN202210298890A CN114660132A CN 114660132 A CN114660132 A CN 114660132A CN 202210298890 A CN202210298890 A CN 202210298890A CN 114660132 A CN114660132 A CN 114660132A
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Abstract
The application discloses a display panel and a manufacturing method, a display device and a detection method thereof, wherein the display panel comprises: including display area and non-display area, the non-display area includes: a crack detection line surrounding the display area; the N detection switches are connected in series and comprise control ends, a first output end and a second output end, wherein the control ends are formed by electrically connecting the grid electrodes of the detection switches together, the first output end is formed by one of the source and drain electrodes of the 1 st detection switch, and the second output end is formed by one of the source and drain electrodes of the Nth detection switch; the control end is electrically connected with one end of the crack detection line, the first output end is electrically connected with the other end of the crack detection line and the power supply signal end of the display panel, and the second output end is electrically connected with the crack detection end of the display panel. The crack detection line surrounding the display area and the group of detection switches connected in series are arranged, so that the crack of the display panel can be directly detected through the simple structure under the condition of no other complex wiring, and the display panel has a wide application prospect.
Description
Technical Field
The invention relates to the technical field of display, in particular to a display panel and a manufacturing method thereof, a display device and a detection method.
Background
The OLED display technology has rapidly taken the market through rapid development, and since the OLED screen is soft, there is a risk that the edge of the screen is damaged and broken during the manufacturing process, and further there is a risk that the broken and deteriorated screen display is abnormal during the manufacturing, detecting and applying processes.
In the prior art, as shown in fig. 1, a PCD test line surrounding a display area is arranged at the peripheral edge of a display panel, whether cracks exist in the PCD test line is monitored by testing the resistance of the PCD test line or testing the voltage values at two ends of the PCD test line, theoretically, when cracks do not exist, a certain fixed resistance value or a fixed voltage drop can be detected, most of the situations in actual product detection are crack-free states, that is, most of the detection processes need to measure a preset reading to obtain a judgment basis, and the method is low in test efficiency; in addition, since the current flowing through the PCD detection line is extremely small, erroneous determination is likely to occur when the current is not detected, and thus cracks cannot be accurately detected.
Disclosure of Invention
In order to solve at least one of the above problems, a first embodiment of the present application provides a display panel including a display area and a non-display area surrounding the display area, the non-display area including:
a crack detection line surrounding the display area; and
the N detection switches are connected in series and comprise control ends, a first output end and a second output end, wherein the control ends are formed by electrically connecting the grid electrodes of the detection switches together, the first output end is formed by one of the source and drain electrodes of the 1 st detection switch, and the second output end is formed by one of the source and drain electrodes of the Nth detection switch;
wherein the control end is electrically connected with one end of the crack detection line, the first output end is electrically connected with the other end of the crack detection line and the power supply signal end of the display panel, the second output end is electrically connected with the crack detection end of the display panel,
wherein N is more than or equal to 1 and is a positive integer.
In some of the alternative embodiments, the first and second,
the crack detection line comprises an inner ring portion surrounding the display area, an outer ring portion surrounding the inner ring portion, and a connecting portion connecting the outer ring portion and the inner ring portion, wherein one end, which is not connected with the outer ring portion, of the inner ring portion is electrically connected with the control end, and one end, which is not connected with the inner ring portion, of the outer ring portion is electrically connected with the first output end.
In some alternative embodiments, N is equal to 2,
the 1 st detection switch is a first thin film transistor of a P type, the 2 nd detection switch is a second thin film transistor of a P type,
wherein the power signal terminal is connected to a high level signal, the source electrode of the first thin film transistor is electrically connected to the power signal terminal, the drain electrode of the first thin film transistor is electrically connected to the source electrode of the second thin film transistor, and the drain electrode of the second thin film transistor is electrically connected to the crack detection terminal, or
The power signal end is connected with a low level signal, the drain electrode of the first thin film transistor is electrically connected with the power signal end, the source electrode of the first thin film transistor is electrically connected with the drain electrode of the second thin film transistor, and the source electrode of the second thin film transistor is electrically connected with the crack detection end.
In some alternative embodiments, N is equal to 2,
the 1 st detection switch is a first thin film transistor of an N type, the 2 nd detection switch is a second thin film transistor of an N type,
wherein the power signal terminal is connected to a high level signal, the drain of the first thin film transistor is electrically connected to the power signal terminal, the source is electrically connected to the drain of the second thin film transistor, and the source of the second thin film transistor is electrically connected to the crack detection terminal, or
The power signal end is connected with a low level signal, the source electrode of the first thin film transistor is electrically connected with the power signal end, the drain electrode of the first thin film transistor is electrically connected with the source electrode of the second thin film transistor, and the drain electrode of the second thin film transistor is electrically connected with the crack detection end.
In some alternative embodiments, N is equal to 2,
wherein, the 1 st detection switch is a P-type first thin film transistor, the 2 nd detection switch is an N-type second thin film transistor, the power supply signal end is connected with a high level signal,
the source electrode of the first thin film transistor is electrically connected with the power signal end, the drain electrode of the first thin film transistor is electrically connected with the drain electrode of the second thin film transistor, and the source electrode of the second thin film transistor is electrically connected with the crack detection end; or
Wherein, the 1 st detection switch is a P-type first thin film transistor, the 2 nd detection switch is an N-type second thin film transistor, the power supply signal end is connected with a low level signal,
the drain electrode of the first thin film transistor is electrically connected with the power signal end, the source electrode of the first thin film transistor is electrically connected with the source electrode of the second thin film transistor, and the drain electrode of the second thin film transistor is electrically connected with the crack detection end; or
Wherein, the 1 st detection switch is a first N-type thin film transistor, the 2 nd detection switch is a second P-type thin film transistor, the power supply signal end is connected with a high level signal,
the drain electrode of the first thin film transistor is electrically connected with the power signal end, the source electrode of the first thin film transistor is electrically connected with the source electrode of the second thin film transistor, and the drain electrode of the second thin film transistor is electrically connected with the crack detection end; or
Wherein, the 1 st detection switch is a first N-type thin film transistor, the 2 nd detection switch is a second P-type thin film transistor, the power supply signal end is connected with a low level signal,
the source electrode of the first thin film transistor is electrically connected with the power signal end, the drain electrode of the first thin film transistor is electrically connected with the drain electrode of the second thin film transistor, and the source electrode of the second thin film transistor is electrically connected with the crack detection end.
In some optional embodiments, the display panel further comprises: a substrate and a driving circuit layer formed on the substrate, wherein the driving circuit layer comprises a P-type silicon crystal layer, a first gate layer, an indium gallium zinc oxide layer, a second gate layer and a source drain layer which are arranged on the substrate in a stacking manner,
the detection switch comprises an active layer, a grid electrode, a source electrode and a drain electrode,
when the detection switch is a P-type thin film transistor, the active layer and the P-type silicon crystal layer of the detection switch are arranged at the same layer, the grid electrode and the first grid electrode layer are arranged at the same layer, the source electrode and the drain electrode and the source drain layer are arranged at the same layer,
when the detection switch is an N-type thin film transistor, the active layer and the indium gallium zinc oxide layer of the detection switch are arranged on the same layer, the grid electrode and the second grid electrode layer are arranged on the same layer, and the source electrode, the drain electrode and the source drain layer are arranged on the same layer.
In some optional embodiments, the display panel further comprises: the crack detection line comprises a substrate and a driving circuit layer formed on the substrate, wherein the driving circuit layer comprises a grid layer and a source drain layer, and the crack detection line is arranged on one of the grid layer and the source drain layer.
In some optional embodiments, the display panel further comprises: a detection connecting line for connecting the second output terminal to the crack detection terminal,
the detection connecting line at least partially surrounds the display area.
A second aspect of the invention provides a display device comprising the display panel described above.
A third aspect of the present invention provides a method of manufacturing the display panel described above, the display panel including a display area and a non-display area, comprising:
forming a crack detection line surrounding the display area in the non-display area;
forming N detection switches connected in series in a non-display area, wherein the detection switches connected in series comprise a control end formed by connecting the grid electrode of each detection switch, a first output end formed by one of the source and drain electrodes of the 1 st detection switch and a second output end formed by one of the source and drain electrodes of the Nth detection switch;
wherein the control end is electrically connected with one end of the crack detection line, the first output end is electrically connected with the other end of the crack detection line and the power supply signal end of the display panel, the second output end is electrically connected with the crack detection end of the display panel,
wherein N is more than or equal to 1 and is a positive integer.
A fourth aspect of the present invention provides a detection method using the display panel described above, including:
a power supply signal is input to the power supply signal terminal,
when no crack exists in the crack detection line, the detection switch is not conducted, the resistance value detected between the power supply signal end and the crack detection end is infinite,
when the crack detection line has cracks, the detection switch is conducted, and the resistance value detected between the power signal end and the crack detection end is a preset limited value.
The invention has the following beneficial effects:
aiming at the existing problems, the invention sets a display panel and a manufacturing method thereof, a display device and a detection method, and provides a crack detection line surrounding a display area and a group of detection switches connected in series, so that the crack of the display panel can be directly detected through a simple structure under the condition of no other complex wiring, the resistance detected by a detection end is infinite under the condition of no crack of the crack detection line, and the detection resistance is a limited determination value under the condition of cracks, so that the normal state is easy to judge, the abnormal state can be quickly and accurately detected, and the detection efficiency is improved; in addition, the current in the detection loop is amplified by virtue of the amplification function of the detection switch, so that the detection accuracy is improved, and the method has a wide application prospect.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings required to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the description below are only some embodiments of the present invention, and it is obvious for those skilled in the art that other drawings can be obtained according to the drawings without creative efforts.
FIG. 1 is a schematic structural view of a prior art display panel;
fig. 2 is a schematic structural view of a display panel according to an embodiment of the present application;
fig. 3 is a schematic structural view of a display panel according to another embodiment of the present application;
fig. 4 is a schematic structural view of an edge area CC cut by a display panel according to an embodiment of the present application;
fig. 5 is a schematic diagram of routing of a power signal end and a crack test end of a display panel in a bonding area according to an embodiment of the present application;
FIG. 6 is a schematic cross-sectional view of a detection switch according to an embodiment of the present application;
FIG. 7 is a schematic cross-sectional view of a detection switch according to another embodiment of the present application;
FIG. 8 is a schematic cross-sectional view of a detection switch according to another embodiment of the present application;
fig. 9 is a schematic flow chart of a manufacturing method of a display panel according to an embodiment of the present application.
Detailed Description
In order to more clearly illustrate the invention, the invention is further described below with reference to preferred embodiments and the accompanying drawings. Similar parts in the figures are denoted by the same reference numerals. It is to be understood by persons skilled in the art that the following detailed description is illustrative and not restrictive, and is not to be taken as limiting the scope of the invention.
Unless defined otherwise, technical or scientific terms used herein shall have the ordinary meaning as understood by one of ordinary skill in the art to which this invention belongs. The use of "first," "second," and the like, herein does not denote any order, quantity, or importance, but rather the terms "first," "second," and the like are used to distinguish one element from another. The word "comprising" or "comprises", and the like, means that the element or item listed before the word covers the element or item listed after the word and its equivalent, but does not exclude other elements or items.
The terms "on … …", "formed on … …" and "disposed on … …" as used herein may mean that one layer is formed or disposed directly on another layer, or that one layer is formed or disposed indirectly on another layer, i.e., there is another layer between the two layers. As used herein, unless otherwise specified, the term "on the same layer" means that two layers, components, members, elements or portions can be formed by the same patterning process, and the two layers, components, members, elements or portions are generally formed of the same material. Herein, unless otherwise specified, the expression "patterning process" generally includes the steps of coating of a photoresist, exposure, development, etching, stripping of the photoresist, and the like. The expression "one-time patterning process" means a process of forming a patterned layer, member, or the like using one mask plate.
Referring to fig. 2, an embodiment of the present application provides a display panel 1 including a display area 11 and a non-display area 12 surrounding the display area 11, the non-display area 12 including:
a crack detection line 121 surrounding the display area 11; and
n series-connected detection switches T (N is 2, and the detection switches T1 and T2 are shown in fig. 2), including a control terminal G, a first output terminal a formed by one of the source and drain of the 1 st detection switch, and a second output terminal b formed by one of the source and drain of the nth detection switch, each having a gate electrically connected thereto;
wherein the control terminal G is electrically connected with one end of the crack detection line 121, the first output terminal a is electrically connected with the other end of the crack detection line and the power signal terminal A of the display panel, the second output terminal B is electrically connected with the crack detection terminal B of the display panel 1,
wherein N is more than or equal to 1 and is a positive integer.
Aiming at the existing problems, the invention sets a display panel and a manufacturing method thereof, a display device and a detection method, and provides a crack detection line surrounding a display area and a group of detection switches connected in series, so that the crack of the display panel can be directly detected through the simple structure under the condition of no other complex wiring, the resistance detected by the detection end is infinite under the condition of no crack of the crack detection line, and the detection resistance is a limited determined value under the condition of cracks, so that the normal state is easy to judge, the abnormal state can be quickly and accurately detected, and the detection efficiency is improved; in addition, the current in the detection loop is amplified by virtue of the amplification function of the detection switch, so that the detection accuracy is improved, and the method has a wide application prospect.
In a specific example, referring to fig. 2, the display panel 1 includes a display area 11 and a non-display area 12 disposed at a periphery of the display area 11, wherein the non-display area 12 includes a crack detection line 121 and 2 detection switches T1 and T2 connected in series, and the detection switches T1 and T2 may be thin film transistors.
It should be understood by those skilled in the art that when referring to 2 detection switches connected in series as shown in fig. 2, it means that the source or drain of the 1 st detection switch is connected to a certain terminal, the other end is electrically connected to the source or drain of the 2 nd detection switch, the other end of the 2 nd detection switch is connected to another terminal, and the gates of the 2 detection switches may or may not be connected to the same input terminal. It is needless to say that the present application requires that the gates of 2 detection switches are connected together to form the control terminal G of the detection switches connected in series, and the description thereof is omitted here.
With continued reference to fig. 2, the sensing switches T1 and T2 include a control terminal G, a first output terminal a, and a second output terminal b as a series-connected entity 122. The gate of each detection switch is electrically connected to form the control terminal G, one of the source and drain of the 1 st detection switch T1 forms the first output terminal a, and one of the source and drain of the 2 nd detection switch T2 forms the second output terminal b.
In the present application, the control terminal G is electrically connected to one end of the crack detection line 121, the first output terminal a is electrically connected to the other end of the crack detection line and the power signal terminal a of the display panel 1, and the second output terminal B is electrically connected to the crack detection terminal B of the display panel 1.
As shown in fig. 2, by the above arrangement, the detection switch and the crack detection line 121 form a complete closed loop by using the structural features of the detection switch, the power signal terminal a and the crack detection terminal B only correspond to the detection ports led out from the first output terminal a and the second output terminal B of the detection switch whole 122 during the detection process, and by reasonably matching the type of each detection switch in the detection switch whole 122 connected in series with the power signal connected to the power signal terminal a, it can be realized that in the case that there is a majority of cracks (i.e. no cracks on the edge of the display panel) in the crack detection line 121, the detection switches T1 and T2 are turned off, the resistance value between the first output terminal a and the second output terminal B is infinite, and in the case that there is a minority of cracks (i.e. cracks on the edge of the display panel) in the crack detection line 121, the detection switches T1 and T2 are turned on, and the resistance between the first output terminal a and the second output terminal b is a preset limit value, so that the detection difficulty is greatly reduced compared with the prior art.
Referring to fig. 2 and 3, two wiring schemes are shown to satisfy the circuit configuration of the crack detection lines and the detection switches. The crack detection line 121' shown in fig. 3 is a single-turn line surrounding the display area 11.
In contrast, the crack detection lines 121 shown in fig. 2 are double-loop lines surrounding the display area 11. Specifically, the crack detection line 121 includes an inner ring portion surrounding the display region 11, an outer ring portion surrounding the inner ring portion, and a connection portion connecting the outer ring portion and the inner ring portion, wherein one end of the inner ring portion not connected with the outer ring portion is electrically connected with the control terminal G, and one end of the outer ring portion not connected with the inner ring portion is electrically connected with the first output terminal a. Through the arrangement, compared with the single-turn circuit shown in fig. 3, the resistance value of the detection loop can be increased by increasing the length of the crack detection line, so that the loop resistance value when the crack exists is easier to detect, and the crack on the periphery of the display area of the display panel can be accurately detected.
Referring to fig. 4, a top view of the edge region CC gives further details of the relative positions of the crack detection lines. As shown in fig. 4, the non-display area 12 surrounds the display area 11, and includes, in the non-display area 12: the GOA circuit cells 123 surrounding the display area 11, the EOA circuit cells 124 surrounding the GOA circuit cells 123, a negative Voltage (VSS) area 125 surrounding the EOA circuit cells 124, and the crack detection lines 121' surrounding the negative Voltage (VSS) area 125. As can be appreciated by a person skilled in the art, when the crack detection line 121 is a double-turn loop, the routing position of the crack detection line 121 is still located at the position of the crack detection line 121' in FIG. 4, which is intended to be a form including an inner loop portion and an outer loop portion, and will not be described herein.
In order to further understand the structural features of the crack detection lines and the detection switches in the display panel of the embodiment of the present application and the loops formed by the crack detection lines and the detection switches, a specific circuit principle is described below with reference to fig. 2 and 5.
In this example, the detection switch T1 is the 1 st detection switch in the entire series-connected detection switches 122, and the detection switch T2 is the 2 nd detection switch in the entire series-connected detection switches 122. It is assumed in this example that the detection switch T1 and the detection switch T2 are both P-type thin film transistors, and the power signal terminal a is connected to a high level signal, and the absolute value of the high level signal should be greater than the absolute value of the gate threshold voltage of the thin film transistor.
Referring to fig. 2, the source of the detection switch T1 is electrically connected to the power signal terminal a as the first output terminal a, the drain of the detection switch T1 is electrically connected to the source of the detection switch T2, the drain of the detection switch T2 is electrically connected to the crack detection terminal B as the second output terminal B, and the gates of the detection switch T1 and the detection switch T2 are connected together as the control terminal G. The control terminal is electrically connected to one end of the crack detection line 121, and the first output terminal b is electrically connected to the other end of the crack detection line 121.
The display panel further includes a bonding region including a bonding structure such as a Chip On Film (COF) for bonding the driver chip. Referring to fig. 5, the bonding region includes pads corresponding to pad pins of the driver chip to be bonded one to one. The driving chip may be a driving chip for display driving of the display panel or a driving chip for display and touch driving of the display panel, and a chip area after the driving chip is bound is schematically represented by a dashed line box in the figure. In the present application, a power signal pin existing in the driver chip may be used as the power signal terminal a, and another pin in the driver chip is simply defined as the crack detection terminal B during crack detection, so that the crack detection function of the present application may be implemented, and details are not repeated herein.
As shown in fig. 2, when there is no crack in the crack detection line 121, that is, there is no crack at the edge of the display panel, the source of the detection switch T1 is connected to a high level signal, and the control terminal G is also connected to a high level signal, and at this time, the gate-source voltage drop Vgs1 of the detection switch T1 is 0 v. The detection switch T1 is turned off, no current flows between the detection switches T1 and T2, the power signal terminal A and the crack detection terminal B are disconnected, the crack detection terminal B can easily detect that the resistance value is infinite, and the judgment that the edge of the display panel does not respect the crack is made.
When a crack exists in the crack detection line 121, that is, when a crack exists at an edge of the display panel, the source of the detection switch T1 is connected to a high level signal, but the voltage value of the control terminal G is 0v due to the interruption of the crack detection line 121, at this time, the gate and source voltage drop Vgs1 of the detection switch T1 is a negative value whose absolute value is greater than the absolute value of the threshold voltage of the detection switch T1, and the detection switch T1 is turned on; at the same time, the detection switch T1 is turned on, the source of the detection switch T2 is also a high-level signal, and the gate-to-source voltage drop Vgs2 of the detection switch T2 is also a negative value whose absolute value is greater than the absolute value of the threshold voltage of the detection switch T2. The detection switch T1 and the detection switch T2 are turned on simultaneously, the current Id flows through the detection switch T1 and the detection switch T2, and the crack detection end detects that the resistance value is a preset limited value. In addition, because the thin film transistor is equivalent to an amplifier and has a microscopic amplification effect, the current Id is far larger than the current value which flows through only by taking the resistance value of the PCD detection line as a measuring and calculating standard in the prior art, and the detection loop can be accurately detected to be in a conducting state through microscopic amplification, so that the accuracy and the easiness of detecting the resistance value of the detection loop are improved. Those skilled in the art will appreciate that the channel width to length ratio in the sense switch can be reasonably set to provide reasonable transistor amplification, thereby reasonably optimizing the accuracy and ease of resistance sensing.
According to the arrangement, the detection switch is introduced, and the conduction principle of the detection switch with the thin film transistor structure is utilized, the two ends of the crack detection line are respectively connected to the grid electrode and the source electrode of the detection switch, so that infinite resistance is detected for the crack detection line in a normal state without cracks, the detection difficulty is simplified, and the detection efficiency is improved; in addition, by utilizing the amplification characteristic of the thin film transistor, when a crack exists, the current value in the detection loop is amplified, so that the crack detection end can accurately detect the voltage drop, the problem that the current value is not detected due to small current in a PCD detection line in the prior art and misjudgment is caused is solved, namely, the amplification characteristic of the thin film transistor is utilized in the embodiment of the application, and as long as the power supply signal end A is communicated with the crack detection end B, the obvious voltage drop can be accurately captured, and the misjudgment is avoided.
It should be noted that, the connection mode and crack detection principle of the detection switches T1 and T2 are described above by taking the example that the power signal terminal is connected to the high level signal, the present application is not limited to the type of the signal connected to the power signal terminal, for example, the power signal terminal may also be connected to the low level signal, for example, the power signal terminal is the VGL terminal, and the detection principles of the detection switch T1 and the detection switch T2 are the same as the above process, and the difference is only that the connection mode of the detection switch T1 and the detection switch T2 is adjusted.
Specifically, at this time, the drain of the detection switch T1 is electrically connected to the power signal terminal a as the first output terminal a, the source of the detection switch T1 is electrically connected to the drain of the detection switch T2, the source of the detection switch T2 is electrically connected to the crack detection terminal B as the second output terminal B, and the gates of the detection switch T1 and the detection switch T2 are connected together as the control terminal G. The aforementioned control terminal is electrically connected to one end of the crack detection line 121, and the first output terminal b is electrically connected to the other end of the crack detection line 121. The specific conduction principle is similar to the above, and is not described herein again.
It should be noted that, the connection mode of the detection switches T1 and T2 is described above only by taking the example where the detection switch T1 and the detection switch T2 are both P-type thin film transistors. It should be understood by those skilled in the art that the present application is not limited to this form, and the detection switch T1 and the detection switch T2 may be both N-type thin film transistors, or the detection switch T1 may be an N-type thin film transistor and the detection switch T2 may be a P-type thin film transistor, or the detection switch T1 may be a P-type thin film transistor and the detection switch T2 may be an N-type thin film transistor.
In an alternative embodiment, specifically, when the detection switch T1 and the detection switch T2 are both N-type thin film transistors, if the power signal terminal a is connected to a high level signal, for example, the power signal terminal is a VGH terminal, the drain of the detection switch T1 is electrically connected to the power signal terminal a, the source is electrically connected to the drain of the detection switch T2, and the source of the detection switch T2 is electrically connected to the crack detection terminal B; or if the power signal terminal is connected to a low level signal, for example, the power signal terminal is a VGL terminal, the source of the detection switch T1 is electrically connected to the power signal terminal a, the drain of the detection switch T2 is electrically connected to the source of the detection switch T2, and the drain of the detection switch T2 is electrically connected to the crack detection terminal B.
In another alternative embodiment, specifically, when the detection switch T1 is a P-type thin film transistor and the detection switches T2 are both N-type thin film transistors, the power signal terminal a is connected to a high level signal, for example, the power signal terminal a is a VGH terminal, the source of the detection switch T1 is electrically connected to the power signal terminal a, the drain of the detection switch T2 is electrically connected to the drain of the detection switch T2, and the source of the detection switch T2 is electrically connected to the crack detection terminal B.
In another alternative embodiment, specifically, the detection switch T1 is a P-type thin film transistor, the detection switch T2 is an N-type thin film transistor, the power signal terminal a is connected to a low-level signal, the drain of the detection switch T1 is electrically connected to the power signal terminal a, the source is electrically connected to the source of the detection switch T2, and the drain of the detection switch T2 is electrically connected to the crack detection terminal B.
In another alternative embodiment, specifically, the detection switch T1 is an N-type thin film transistor, the detection switch T2 is a P-type thin film transistor, the power signal terminal a is connected to a high level signal, the drain of the detection switch T1 is electrically connected to the power signal terminal a, the source is electrically connected to the source of the detection switch T2, and the drain of the detection switch T2 is electrically connected to the crack detection terminal B.
In another alternative embodiment, specifically, the detection switch T1 is an N-type thin film transistor, the detection switch T2 is a P-type thin film transistor, the power signal terminal a is connected to a low level signal, the source of the detection switch T1 is electrically connected to the power signal terminal a, the drain of the detection switch T2 is electrically connected to the drain of the detection switch T2, and the source of the detection switch T2 is electrically connected to the crack detection terminal B.
It should be understood by those skilled in the art that the difference of the above alternative embodiments is mainly the connection relationship of the detection switches, and the specific process in the detection process is similar to the circuit principle that the detection switch T1 and the second detection switch T2 are both P-type thin film transistors and the power signal terminal a is connected to a high level signal, so that the detection switch T1 and the detection switch T2 are both turned off when there is no crack in the crack detection line 121 and turned on when there is a crack in the crack detection line 121 according to the voltage drop of the gate and the source of the thin film transistor, which is not described herein again.
It is to be noted that, although the above examples each show a structure in which 2 detection switches are connected in series, the present application is not intended to be limited thereto. When only one detection switch, the detection principle of the embodiment of the application still holds, but compared with one detection switch, the electric leakage of the detection switch can be reduced when 2 detection switches are connected in series. In the same way, it can be understood that, in the embodiment of the present application, a series structure may also be formed by more detection switches, and more detection switches may further reduce the leakage current of the detection switches, but when considering the area of the non-display area in the display panel occupied by the detection switches, a designer may compromise between crack detection and saving area, and details are not described herein.
In other alternative embodiments, in order to reduce the interference of the electrical connection between the crack detection terminal B and the detection switch with the original wiring in consideration of the presence of the intricate wiring in the non-display area 12 of the display panel, it is preferable that, as shown in fig. 2, the display panel further includes a detection connection line for connecting the second output terminal B to the crack detection terminal B, the detection connection line at least partially surrounding the display area. Preferably, the detection connecting line surrounds the display area 3/4. With this arrangement, the crack detection-related circuit and the wiring can be made to avoid interference with other wirings of the display panel.
It should be further noted that, in the embodiments of the present application, the detection switch, the crack detection line and the detection connection line thereof are implemented by using the existing process film layer, a new process flow is not added, and the manufacturing method is simple.
Alternatively, the crack detection lines may be disposed in the same layer as any signal line in the display panel, for example, the display panel includes a substrate and a driving circuit layer formed on the substrate, the driving circuit layer includes a gate layer and a source-drain layer, the gate layer includes a gate signal line, the source-drain layer includes a data signal line or another power signal line, and the crack detection lines may be disposed in the same layer as the gate signal line or the other power signal line.
Further specifically, referring to FIG. 6, in some alternative embodiments, the display panel is a display panel of a conventional LTPS structure. At this time, in order to utilize the existing process film, the detection switch T1 and the detection switch T2 are both P-type thin film transistors. Specifically, as shown in fig. 6, the display panel includes a driving circuit layer formed on a substrate 100, and the driving circuit layer includes a P-type silicon layer 101, a gate layer 103, and a source-drain layer 107, which are stacked and disposed on the substrate 100. The gates of the detection switches T1 and T2 are disposed in the same layer as the gate layer, and the sources and drains are disposed in the same layer as the source-drain layer 107. As shown in fig. 6, the connection lines connecting the respective detection switches may also be provided in the same layer as the source-drain layers.
With the adoption of the arrangement, the detection switch, the connecting wire of the detection switch and the crack detection wire are formed in a patterning mode in the process of manufacturing other transistors in the display area or the non-display area by means of the process film layer in the existing display panel, and the process method is simple.
Of course, in addition to the above film layers, as shown with reference to fig. 6, the driving circuit layer may further include: the first gate insulating layer 102-1, the second gate insulating layer 102-2, and the dielectric layer 105 are used to isolate the metal layers, and include a planarization layer 109 for planarization and circuit protection, and only the relationship between the metal layers is shown in fig. 6, which is not described herein.
In other alternative embodiments, as shown with reference to fig. 7 and 8, the display panel is a conventional LTPO structure display panel. At this time, various P-type transistors and N-type transistors meeting the structural design can be manufactured by utilizing the existing process film layer.
Specifically, referring to fig. 7, the driving circuit layer includes a P-type silicon layer 101, a first gate layer 103-1, an ingaga-zn oxide layer 108, a second gate layer 103-2, and a source-drain layer 107, which are stacked on a substrate 100.
In addition to the above film layers, as shown with reference to fig. 7 and 8, the driving circuit layer further includes: the first gate insulating layer 102-1, the first dielectric layer 105-1, the buffer layer 106, the second gate insulating layer 102-2, and the second dielectric layer 105-2 are used for isolating the metal film layers, and the planarization layer 109 is used for planarization and circuit protection, and only the relationship between these film layers is shown in fig. 7 and fig. 8, which is not repeated herein.
Referring to fig. 7, when one of the detection switches is a P-type thin film transistor and the other of the detection switches is a P-type thin film transistor, the active layer of the P-type thin film transistor in the detection switch is disposed on the same layer as the P-type silicon crystal layer 101, the gate electrode is disposed on the same layer as the first gate layer 103-1, and the source electrode and the drain electrode are disposed on the same layer as the source drain layer 107; the active layer of the N-type thin film transistor in the detection switch is disposed on the same layer as the indium gallium zinc oxide layer 108, and the gate layer is disposed on the same layer as the second gate layer 103-2. As shown in fig. 7, the connection lines between the detection switches may also be provided in the same layer as the source-drain layers 107.
Referring to fig. 8, when the detection switches are all N-type tfts, the active layer of the detection switch and the ingan layer 108 are disposed at the same layer, and the gate layer and the second gate layer 103-2 are disposed at the same layer. As shown in fig. 7, the connection lines between the detection switches may also be provided in the same layer as the source-drain layers 107.
In addition, although not further illustrated, in the display panel of the LTPO structure, 2P-type thin film transistors may be formed through the existing film layer. That is, the active layer of the detection switch is disposed in the same layer as the P-type silicon crystal layer 101, the gate is disposed in the same layer as the first gate layer 103-1, the source and drain are disposed in the same layer as the source-drain layer 107, and the connection line between the detection switches may be disposed in the same layer as the source-drain layer 107.
It should be noted that other metal film layers may be used as the above connecting lines for connecting the electrodes, and will not be further described herein. Each detection switch, each connecting wire, each crack detection line and each detection connecting wire in the embodiment of the application can be formed by patterning a thin film transistor and a wiring in an existing circuit at one time by means of process film layers in various existing display panels, and the method is simple in process and has wide application prospect.
Corresponding to the display panel, an embodiment of the present application further provides a method for manufacturing the display panel, which is shown in fig. 9 and includes:
step S11, forming crack detection lines surrounding the display area in the non-display area;
step S12, forming N detection switches connected in series in the non-display area, wherein the detection switches connected in series comprise a control end formed by connecting the grid electrode of each detection switch, a first output end formed by one source drain electrode of the 1 st detection switch and a second output end formed by one source drain electrode of the Nth detection switch;
wherein the control end is electrically connected with one end of the crack detection line, the first output end is electrically connected with the other end of the crack detection line and a power signal line of the display panel, the second output end is electrically connected with the crack detection end of the display panel,
wherein N is more than or equal to 1 and is a positive integer.
It is noted that the above description is not intended to limit the order of the steps, which may be specifically set as desired.
The invention aims at the existing problems, establishes a display panel and a manufacturing method thereof, a display device and a detection method, and provides a crack detection line surrounding a display area and a group of detection switches connected in series, so that the crack of the display panel can be directly detected through the simple structure under the condition of no other complex wiring, the resistance detected by the detection end is infinite under the condition of no crack of the crack detection line, and the detection resistance is a limited determined value under the condition of crack, so that the normal state is easy to judge, the abnormal state can be quickly and accurately detected, the detection efficiency is improved, the product manufacturing cost is reduced, and the invention has wide application prospect.
Specifically, step S12 is described by taking the LTPS structure display panel and the transistors are all P-type thin film transistors as an example, and then the forming of N serially connected detection switches in the non-display area further includes:
forming a P-type silicon crystal layer 101 as an active layer on a substrate 100;
forming a first gate insulating layer 102-1 on the P-type silicon crystal layer 101;
forming a gate electrode 103 on the first gate insulating layer 102-1;
forming a second gate insulating layer 102-2 on the gate electrode 103;
forming a dielectric layer 105 on the second gate insulating layer 102-2;
forming a via hole penetrating the dielectric layer 105, the second gate insulating layer 102-2, and the first gate insulating layer 102-1;
source and drain layers including a source, a drain, and a connection line connecting the source and the drain are formed on the dielectric layer 105 to form the P-type thin film transistors connected in series in the embodiment of the present application.
Those skilled in the art will understand that other parts of the driving circuit in the display panel can be completed according to the common process steps in the art, and will not be described again.
Through the arrangement, the manufacturing method provided by the embodiment of the application can form the detection switch for crack detection in one patterning mode when the thin film transistors and the wiring in other areas are manufactured by utilizing the process film layer in the display panel, no additional process step and equipment are added, and the method has a wide application prospect.
Corresponding to the display panel, an embodiment of the present application further provides a detection method using the display panel, including:
a power supply signal is input to the power supply signal line,
when no crack exists in the crack detection line, the detection switch is not conducted, the resistance value detected between the power supply signal end and the crack detection end is infinite,
when the crack detection line has cracks, the detection switch is switched on, and the resistance value detected between the power signal end and the crack detection end is a preset limited value.
In the embodiment, the crack detection line surrounding the display area and the group of detection switches connected in series are provided, so that the crack of the display panel can be directly detected through the simple structure under the condition of no other complex wiring, the resistance detected by the detection end is infinite under the condition of no crack of the crack detection line, and the detection resistance is a limited determined value under the condition of crack existence, so that the normal state is easy to judge, the abnormal state can be quickly and accurately detected, and the detection efficiency is improved; in addition, the current in the detection loop is amplified by virtue of the amplification function of the detection switch, so that the detection accuracy is improved, and the method has a wide application prospect.
Based on the same inventive concept, the embodiment of the invention further provides a display device, which comprises the display panel provided by the embodiment of the invention. The principle of the display device to solve the problem is similar to the display panel, so the implementation of the display device can be referred to the implementation of the display panel, and repeated details are not repeated herein.
In specific implementation, the display device may be any product or component with a display function, such as a mobile phone, a tablet computer, a television, a display, a notebook computer, a digital photo frame, and a navigator. Other essential components of the display device are understood by those skilled in the art, and are not described herein or should not be construed as limiting the present application.
Aiming at the existing problems, the invention sets a display panel and a manufacturing method thereof, a display device and a detection method, and provides a crack detection line surrounding a display area and a group of detection switches connected in series, so that the crack of the display panel can be directly detected through the simple structure under the condition of no other complex wiring, the resistance detected by the detection end is infinite under the condition of no crack of the crack detection line, and the detection resistance is a limited definite value under the condition of crack existence, so that the normal state is easy to judge, the abnormal state can be quickly and accurately detected, and the detection efficiency is improved; in addition, the current in the detection loop is amplified by virtue of the amplification function of the detection switch, so that the detection accuracy is improved, and the method has a wide application prospect.
It should be understood that the above-mentioned embodiments of the present invention are only examples for clearly illustrating the present invention, and are not intended to limit the embodiments of the present invention, and it will be obvious to those skilled in the art that other variations or modifications may be made on the basis of the above description, and all embodiments may not be exhaustive, and all obvious variations or modifications may be included within the scope of the present invention.
Claims (11)
1. A display panel comprising a display area and a non-display area surrounding the display area, wherein the non-display area comprises:
a crack detection line surrounding the display area; and
the N detection switches are connected in series and comprise control ends, a first output end and a second output end, wherein the control ends are formed by electrically connecting the grid electrodes of the detection switches together, the first output end is formed by one of the source and drain electrodes of the 1 st detection switch, and the second output end is formed by one of the source and drain electrodes of the Nth detection switch;
wherein the control terminal is electrically connected with one end of the crack detection line, the first output terminal is electrically connected with the other end of the crack detection line and the power supply signal terminal of the display panel, the second output terminal is electrically connected with the crack detection terminal of the display panel,
wherein N is more than or equal to 1 and is a positive integer.
2. The display panel according to claim 1,
the crack detection line comprises an inner ring portion surrounding the display area, an outer ring portion surrounding the inner ring portion, and a connecting portion connecting the outer ring portion and the inner ring portion, wherein one end, which is not connected with the outer ring portion, of the inner ring portion is electrically connected with the control end, and one end, which is not connected with the inner ring portion, of the outer ring portion is electrically connected with the first output end.
3. The display panel of claim 1, wherein N is equal to 2,
the 1 st detection switch is a first thin film transistor of a P type, the 2 nd detection switch is a second thin film transistor of a P type,
wherein the power signal terminal is connected to a high level signal, the source of the first thin film transistor is electrically connected to the power signal terminal, the drain of the first thin film transistor is electrically connected to the source of the second thin film transistor, and the drain of the second thin film transistor is electrically connected to the crack detection terminal, or
The power signal end is connected with a low-level signal, the drain electrode of the first thin film transistor is electrically connected with the power signal end, the source electrode of the first thin film transistor is electrically connected with the drain electrode of the second thin film transistor, and the source electrode of the second thin film transistor is electrically connected with the crack detection end.
4. The display panel of claim 1, wherein N is equal to 2,
the 1 st detection switch is a first thin film transistor of an N type, the 2 nd detection switch is a second thin film transistor of an N type,
wherein the power signal terminal is connected to a high level signal, a drain of the first thin film transistor is electrically connected to the power signal terminal, a source of the first thin film transistor is electrically connected to a drain of the second thin film transistor, and a source of the second thin film transistor is electrically connected to the crack detection terminal, or
The power signal end is connected with a low-level signal, the source electrode of the first thin film transistor is electrically connected with the power signal end, the drain electrode of the first thin film transistor is electrically connected with the source electrode of the second thin film transistor, and the drain electrode of the second thin film transistor is electrically connected with the crack detection end.
5. The display panel of claim 1, wherein N is equal to 2,
wherein, the 1 st detection switch is a P-type first thin film transistor, the 2 nd detection switch is an N-type second thin film transistor, the power supply signal end is connected with a high level signal,
the source electrode of the first thin film transistor is electrically connected with the power signal end, the drain electrode of the first thin film transistor is electrically connected with the drain electrode of the second thin film transistor, and the source electrode of the second thin film transistor is electrically connected with the crack detection end; or
Wherein, the 1 st detection switch is a P-type first thin film transistor, the 2 nd detection switch is an N-type second thin film transistor, the power supply signal end is connected with a low level signal,
the drain electrode of the first thin film transistor is electrically connected with the power supply signal end, the source electrode of the first thin film transistor is electrically connected with the source electrode of the second thin film transistor, and the drain electrode of the second thin film transistor is electrically connected with the crack detection end; or
Wherein, the 1 st detection switch is an N-type first thin film transistor, the 2 nd detection switch is a P-type second thin film transistor, the power supply signal end is connected with a high level signal,
the drain electrode of the first thin film transistor is electrically connected with the power signal end, the source electrode of the first thin film transistor is electrically connected with the source electrode of the second thin film transistor, and the drain electrode of the second thin film transistor is electrically connected with the crack detection end; or
Wherein, the 1 st detection switch is a first N-type thin film transistor, the 2 nd detection switch is a second P-type thin film transistor, the power supply signal end is connected with a low level signal,
and the source electrode of the first thin film transistor is electrically connected with the power supply signal end, the drain electrode of the first thin film transistor is electrically connected with the drain electrode of the second thin film transistor, and the source electrode of the second thin film transistor is electrically connected with the crack detection end.
6. The display panel according to any one of claims 3 to 5, further comprising: the semiconductor device comprises a substrate and a driving circuit layer formed on the substrate, wherein the driving circuit layer comprises a P-type silicon crystal layer, a first grid layer, an indium gallium zinc oxide layer, a second grid layer and a source drain layer which are arranged on the substrate in a stacking mode,
the detection switch comprises an active layer, a grid electrode, a source electrode and a drain electrode,
when the detection switch is a P-type thin film transistor, the active layer of the detection switch and the P-type silicon crystal layer are arranged at the same layer, the grid electrode and the first grid layer are arranged at the same layer, and the source electrode and the drain electrode and the source drain layer are arranged at the same layer,
when the detection switch is an N-type thin film transistor, the active layer of the detection switch and the indium gallium zinc oxide layer are arranged on the same layer, the grid electrode and the second grid electrode layer are arranged on the same layer, and the source electrode and the drain electrode and the source drain layer are arranged on the same layer.
7. The display panel according to claim 1, further comprising: the crack detection line comprises a substrate and a driving circuit layer formed on the substrate, wherein the driving circuit layer comprises a grid layer and a source drain layer, and the crack detection line is arranged on one of the grid layer and the source drain layer.
8. The display panel according to claim 1, further comprising: a detection connection line for connecting the second output terminal to the crack detection terminal,
the detection connecting line at least partially surrounds the display area.
9. A display device characterized by comprising the display panel according to any one of claims 1 to 8.
10. A method of manufacturing a display panel according to any one of claims 1 to 8, the display panel comprising a display area and a non-display area, comprising:
forming a crack detection line surrounding the display area in a non-display area;
forming N detection switches connected in series in the non-display area, wherein the detection switches connected in series comprise a control end formed by connecting the grid electrode of each detection switch, a first output end formed by one of the source and drain electrodes of the 1 st detection switch and a second output end formed by one of the source and drain electrodes of the Nth detection switch;
wherein the control terminal is electrically connected with one end of the crack detection line, the first output terminal is electrically connected with the other end of the crack detection line and the power supply signal terminal of the display panel, the second output terminal is electrically connected with the crack detection terminal of the display panel,
wherein N is more than or equal to 1 and is a positive integer.
11. A method of inspecting a display panel according to any one of claims 1 to 8, comprising:
a power supply signal is input to the power supply signal terminal,
when no crack exists in the crack detection line, the detection switch is not conducted, the resistance value detected between the power supply signal end and the crack detection end is infinite,
when the crack detection line has cracks, the detection switch is switched on, and the resistance value detected between the power signal end and the crack detection end is a preset limited value.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN116381970A (en) * | 2023-03-14 | 2023-07-04 | 惠科股份有限公司 | Display panel manufacturing method, display panel and display device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN116381970A (en) * | 2023-03-14 | 2023-07-04 | 惠科股份有限公司 | Display panel manufacturing method, display panel and display device |
| CN116381970B (en) * | 2023-03-14 | 2024-02-09 | 惠科股份有限公司 | Display panel manufacturing method, display panel and display device |
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