CN114649256A - Rotary base device and semiconductor process equipment - Google Patents
Rotary base device and semiconductor process equipment Download PDFInfo
- Publication number
- CN114649256A CN114649256A CN202210268587.9A CN202210268587A CN114649256A CN 114649256 A CN114649256 A CN 114649256A CN 202210268587 A CN202210268587 A CN 202210268587A CN 114649256 A CN114649256 A CN 114649256A
- Authority
- CN
- China
- Prior art keywords
- magnetic
- base
- wafer
- groove
- rotary
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
The invention provides a rotary pedestal device and semiconductor process equipment, wherein the rotary pedestal device is applied to a process chamber of the semiconductor equipment and comprises a pedestal component, at least two magnetic rotating pieces and at least two groups of magnetic driving components, wherein: the base assembly is arranged in the process chamber and used for bearing the wafer; the magnetic rotating piece is connected with the base component; the magnetic driving assembly is fixedly arranged outside the process chamber, the magnetic rotating piece and the magnetic driving assembly are uniformly distributed along the circumferential direction of the base assembly, each magnetic driving assembly comprises two magnetic driving pieces, the magnetic driving pieces can drive the magnetic rotating piece to rotate through magnetic coupling, and then the magnetic rotating piece drives the base assembly to rotate around the axis of the magnetic rotating piece. The rotary base device and the semiconductor process equipment provided by the invention can improve the levelness and concentricity of wafer rotation and improve the process result.
Description
Technical Field
The invention relates to the technical field of semiconductor equipment, in particular to a rotary base device and semiconductor process equipment.
Background
In the silicon epitaxial growth process, the rotation of a base bearing a wafer in a process chamber has influence on the thickness of an epitaxial layer grown on the wafer and the uniformity of resistivity, the swing amplitude of the rotation of the base is controlled, the concentricity of the wafer in the rotation process is ensured, and the process result of the silicon epitaxial growth process is very important.
As shown in fig. 1, a rotary susceptor apparatus in the prior art includes a susceptor 11, a rotary lifting driving member 12, a rotary transmission member and a lifting transmission member, wherein the susceptor 11 is used for carrying a wafer 9, and the rotary lifting driving member 12 is connected to the susceptor 11 through the rotary transmission member and connected to the lifting transmission member. In the process, the rotary lifting driving part 12 drives the lifting transmission part to lift, so that part of the lifting transmission part passes through the base 11 to be matched with the manipulator, the wafer 9 is transferred between the base 11 and the manipulator, and the rotary lifting driving part 12 drives the rotary transmission part to rotate to drive the base 11 to rotate, so that the wafer 9 is rotated.
However, in the conventional rotating susceptor apparatus, in order to accurately control the levelness of the susceptor 11, high requirements are imposed on the installation among the susceptor 11, the rotating and lifting driving member 12 and the rotating transmission member, and the rotating shaft 13 in the rotating transmission member is easily deformed by heat, so that the wafer 9 is easily swung (vertically swung and/or horizontally swung) during rotation, which affects the levelness of the wafer 9 in rotation and affects the process results.
Disclosure of Invention
The present invention is directed to at least one of the problems of the prior art, and provides a spin pedestal apparatus and a semiconductor processing apparatus, which can improve the levelness and concentricity of wafer rotation and improve the process result.
The invention provides a rotary pedestal device applied to a process chamber of semiconductor equipment, which comprises a pedestal assembly, at least two magnetic rotating pieces and at least two groups of magnetic driving assemblies, wherein:
the base assembly is arranged in the process chamber and used for bearing the wafer;
the magnetic rotating piece is connected with the base assembly;
the magnetic driving assembly is fixedly arranged outside the process chamber, the magnetic rotating pieces and the magnetic driving assembly are uniformly distributed in the circumferential direction of the base assembly, each magnetic driving assembly comprises two magnetic driving pieces, the magnetic driving pieces can drive the magnetic rotating pieces to rotate through magnetic coupling, and then the magnetic rotating pieces drive the base assembly to rotate around the axis of the base assembly.
Optionally, the magnetic poles on the opposite sides of the two magnetic driving pieces in the same group of magnetic driving assemblies are the same.
Optionally, the magnetic rotating member is made of a magnetic conductive material, and the magnetic driving member is an induction coil.
Optionally, the base assembly includes a base and a support connection ring, the base is used for carrying the wafer, the support connection ring is connected with the base, and the magnetic rotation member is disposed in the support connection ring; the supporting connecting ring is provided with a base part and an inserting part, the inserting part is arranged on the base part, the base part extends along the inner peripheral wall of the process chamber, and a gap is formed between the base part and the inner peripheral wall of the process chamber; the bottom surface of base is provided with the inserting groove, the inserting groove is used for pegging graft the grafting portion.
Optionally, a friction layer is arranged between the surfaces of the insertion part in contact with the insertion groove, and the friction layer is used for increasing the friction force between the insertion part and the insertion groove.
Optionally, a heat insulation layer is further arranged between the surface of the insertion part contacting the insertion groove, and the heat insulation layer is used for reducing heat transfer between the base and the insertion part.
Optionally, the friction layer and the thermal insulation layer are both black quartz layers.
Optionally, a cooling channel is disposed in the support connection ring, and the cooling channel is used for introducing a cooling liquid into the support connection ring to cool the support connection ring and the magnetic rotation member.
Optionally, a bearing part for bearing the wafer is arranged in the base, a plurality of air holes are arranged at the bottom of the bearing part, and the air holes are uniformly arranged on the bearing part;
the rotary base device further comprises a gas conveying pipe, the gas outlet end of the gas conveying pipe is communicated with the gas holes, the gas inlet end of the gas conveying pipe is communicated with a gas source to convey gas to the bearing portion, and a first on-off valve is arranged on the gas conveying pipe and used for controlling on-off of the gas conveying pipe.
Optionally, the spin base device further includes an exhaust tube, an air inlet end of the exhaust tube is communicated with the air hole, an air outlet end of the exhaust tube is used for being communicated with an air exhaust device, a second on-off valve is arranged on the exhaust tube, the second on-off valve is used for controlling on-off of the exhaust tube, and the exhaust tube is used for exhausting the gas between the wafer and the bearing portion.
Optionally, a first groove and a second groove are formed in the carrying portion, the second groove is formed in the bottom of the first groove, the radial dimension of the first groove is larger than that of the wafer, the radial dimension of the second groove is smaller than that of the wafer, and a step for carrying the wafer is formed at a connection position of the first groove and the second groove; the air hole is arranged on the bottom surface of the second groove.
The invention also provides semiconductor processing equipment comprising a process chamber and the rotary base device provided by the invention.
The invention has the following beneficial effects:
the rotary base device provided by the invention has the advantages that at least two magnetic rotating pieces are connected with the base component, at least two groups of magnetic driving components are fixedly arranged outside the process chamber, and the at least two magnetic rotating pieces and the at least two groups of magnetic driving components are uniformly distributed along the circumferential direction of the base component, so that the at least two magnetic rotating pieces can be driven to rotate through the magnetic coupling by the magnetic driving pieces in the at least two groups of magnetic driving components, the base component can be driven to rotate around the axis of the base component through the magnetic rotating pieces, and further, a wafer borne on the base component can be driven to rotate in a semiconductor process, namely, the rotary base device provided by the invention does not need to rotate the base component around the axis of the base component by using the rotary lifting driving piece and the rotary driving piece as in the prior art, but can realize that the base component rotates around the axis of the base component through the magnetic coupling between the magnetic driving piece and the magnetic rotating pieces, this just makes the base subassembly, the influence of the installation precision between magnetic rotating member and the magnetic drive spare to the levelness of base subassembly can be reduced, thereby can reduce the swing when the wafer rotates in the semiconductor technology because installation error leads to, and, because the magnetic drive spare is through magnetic coupling drive magnetic rotating member rotatory, and then drive the base subassembly rotatory around the axis of self, consequently, need not to set up the pivot axis similar with the rotating transmission spare among the prior art, thereby can prevent that the rotation axis from leading to the probability of warping because of being heated, then can improve the stability that the base subassembly keeps the levelness, and then can improve the levelness and the concentricity of wafer rotation, improve the technology result.
The semiconductor process equipment provided by the invention can improve the levelness and concentricity of wafer rotation and improve the process result by virtue of the rotary base device provided by the invention.
Drawings
FIG. 1 is a schematic diagram of a conventional spin-susceptor apparatus and semiconductor processing equipment;
FIG. 2 is a schematic view of a spin base apparatus and semiconductor processing equipment according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of a base assembly of a spin-on-base apparatus according to an embodiment of the present invention;
FIG. 4 is a schematic diagram of the magnetic coupling between the magnetic driving member and the magnetic rotating member of the rotary base apparatus according to the embodiment of the present invention;
FIG. 5 is a schematic structural diagram of a magnetic driving element and a magnetic rotating element of a rotary base apparatus according to an embodiment of the present invention;
FIG. 6 is a schematic view of the magnetic coupling between the magnetic drive member and the magnetic rotary member shown in detail C of FIG. 5;
FIG. 7 is a schematic top view of a magnetic rotator of a rotating base assembly according to an embodiment of the present invention;
FIG. 8 is a schematic cross-sectional view taken along line A-A of FIG. 7;
FIG. 9 is a schematic bottom view of a base of a spin-on-base apparatus according to an embodiment of the present invention;
FIG. 10 is a schematic top view of a base of a spin-on-base apparatus according to an embodiment of the present invention;
FIG. 11 is a schematic cross-sectional view taken along line B-B of FIG. 10;
description of reference numerals:
10-a process chamber; 11-a base; 12-rotating the lifting drive; 13-a rotating shaft; 14-a lifting shaft; 15-a thimble; 16-an air inlet; 17-lower heating element; 18-a lower dome; 19-a pre-heat;
2-a base; 21-inserting groove; 22-a carrier; 23-a preheating section; 24-pores; 25-a first groove;
26-a second groove; 27-step; 3-a magnetic rotator; 4-a magnetic drive assembly; 41-magnetic drive;
5-supporting the connecting ring; 51-a base portion; 52-a plug-in part; 53-cooling channels; 61-gas transmission pipe;
62-a first on-off valve; 63-an air exhaust pipe; 64-a second on-off valve; 7-gas source; 8-an air extraction device;
9-a wafer; 100-a process chamber; 101-an upper dome; 102-a lower dome; 103-an upper heating element;
104-a lower heating element; 105-a support plate; 106-air inlet.
Detailed Description
In order to make those skilled in the art better understand the technical solution of the present invention, the rotating base device and the semiconductor processing equipment provided by the present invention are described in detail below with reference to the accompanying drawings.
As shown in fig. 2, 4-6, the embodiment of the present invention provides a spin pedestal apparatus applied in a process chamber 100 of a semiconductor device, comprising a pedestal assembly, at least two magnetic rotors 3 and at least two sets of magnetic driving assemblies 4, wherein: the susceptor assembly is disposed in the process chamber 100 for carrying the wafer 9; the magnetic rotating piece 3 is connected with the base assembly; the magnetic driving assembly 4 is fixedly arranged outside the process chamber 100, the magnetic rotating pieces 3 and the magnetic driving assembly 4 are uniformly distributed along the circumferential direction of the base assembly, each magnetic driving assembly 4 comprises two magnetic driving pieces 41, the magnetic driving pieces 41 can drive the magnetic rotating pieces 3 to rotate through magnetic coupling, and then the magnetic rotating pieces 3 drive the base assembly to rotate around the axis of the base assembly.
The rotary base device provided by the embodiment of the invention connects at least two magnetic rotating members 3 with the base assembly, at least two sets of magnetic driving assemblies 4 are fixedly arranged outside the process chamber 100, and the at least two magnetic rotating members 3 and the at least two sets of magnetic driving assemblies 4 are uniformly distributed along the circumferential direction of the base assembly, so that the magnetic rotating members 3 can be driven to rotate through the magnetic driving members 41 in the magnetic driving assemblies 4 through magnetic coupling, the base assembly can be driven to rotate around the axis of the rotary base device through the magnetic rotating members 3, and then the wafer 9 loaded on the base assembly can be driven to rotate in the semiconductor process, that is, the rotary base device provided by the embodiment of the invention does not need to use a rotary base device in the prior art as shown in fig. 1, and the rotary lifting driving member 12 and the rotary driving member are used for realizing the rotation of the base 11 around the axis of the rotary base device, but the base component can rotate around the self axis by the magnetic coupling between the magnetic driving component 41 and the magnetic rotating component 3, which can reduce the influence of the mounting precision among the base component, the magnetic rotating component 3 and the magnetic driving component 41 on the levelness of the base component, thereby reducing the swing of the wafer 9 caused by mounting errors when rotating in the semiconductor process, and because the magnetic driving component 41 drives the magnetic rotating component 3 to rotate through the magnetic coupling, further driving the base component to rotate around the self axis, therefore, the rotating shaft 13 of the rotating transmission component in the prior art is not needed to be arranged, thereby preventing the probability that the rotating shaft 13 is deformed due to heating, further improving the stability of the base component for keeping the levelness, further improving the levelness and concentricity of the rotation of the wafer 9, and improving the process result.
Specifically, as shown in fig. 1, a rotation transmission member of a rotary susceptor apparatus in the prior art includes a rotation shaft 13, two ends of the rotation shaft 13 are respectively connected to a rotation lifting driving member 12 and a susceptor 11, and the rotation lifting driving member 12 drives the rotation shaft 13 to rotate the susceptor 11, so that the installation among the rotation lifting driving member 12, the rotation shaft 13 and the susceptor 11 requires high precision to ensure the levelness of the susceptor 11, and the rotation shaft 13 is in a slender shape, so that the rotation shaft 13 is easily deformed when heated, resulting in a change in the levelness of the susceptor 11, and thus causing the wafer 9 to swing when rotating, which affects the levelness of the wafer 9 rotation, and affects the process results.
As shown in fig. 2, in the rotary pedestal device according to the embodiment of the present invention, the magnetic driving component 41 can drive the magnetic rotating component 3 to rotate through the magnetic coupling, so as to drive the pedestal assembly to rotate around its axis through the magnetic rotating component 3, that is, the magnetic coupling can be generated between the magnetic driving component 41 and the magnetic rotating component 3, and the magnetic coupling therebetween can enable the pedestal assembly to rotate around its axis, so that the influence of the mounting accuracy among the pedestal assembly, the magnetic rotating component 3, and the magnetic driving component 41 on the levelness of the pedestal assembly can be reduced, so as to reduce the swing of the wafer 9 caused by the mounting error when the wafer is rotated in the semiconductor process, and since the magnetic driving component 41 drives the magnetic rotating component 3 to rotate through the magnetic coupling, and further drives the pedestal assembly to rotate around its axis, the rotating shaft 13 of the rotating transmission component in the prior art is not required, therefore, the stability of the base assembly for maintaining the levelness can be improved, the levelness and concentricity of the rotation of the wafer 9 can be further improved, and the process result is improved.
Also, as shown in fig. 1, a semiconductor processing apparatus in the prior art further includes a process chamber 10 and a lower heating member 17, the process chamber 10 surrounds the susceptor 11, and a large gap is formed between the process chamber 10 and the susceptor 11, the lower heating member 17 is disposed below the rotating shaft 13 for heating the susceptor 11, and since in a semiconductor process, a process gas in the process chamber 10 above the susceptor 11 may flow to below the susceptor 11 through the gap between the process chamber 10 and the susceptor 11, the process gas may deposit on the rotating shaft 13 to form a deposit, which affects the lower heating member 17 to heat the susceptor 11, and affects a process result. As shown in fig. 2, the rotary susceptor apparatus according to the embodiment of the present invention can realize the rotation of the susceptor 11 by using the rotary elevating driving member 12 and the rotary transmission member without using a rotary susceptor apparatus as in the prior art, so as to prevent the susceptor 11 from being affected by the heating in the semiconductor process due to the deposition generated on the rotary shaft 13, thereby further improving the process result.
As shown in fig. 4-6, in a preferred embodiment of the present invention, the opposite sides of the two magnetic driving members 41 in the same set of magnetic driving assemblies 4 have the same magnetic poles.
For example, as shown in fig. 5 and fig. 6, the number of the magnetic driving assemblies 4 may be four, the number of the magnetic rotation members 3 may be four, each magnetic driving assembly 4 may include two magnetic driving members 41, the four magnetic rotation members 3 and the four magnetic driving assemblies 4 may be uniformly distributed and arranged in a square shape along the circumferential direction of the base assembly, the magnetic poles on one side opposite to the two magnetic driving members 41 in the same magnetic driving assembly 4 are both S poles, the magnetic poles on the opposite side are both N poles, the magnetic poles on one side opposite to the two adjacent magnetic driving members 41 in the two adjacent magnetic driving assemblies 4 are both N poles, and the magnetic poles on the opposite side are both S poles.
In practical applications, by supplying an alternating current to each magnetic driving member 41, lines of magnetic induction can be generated in each magnetic driving member 41, so that each magnetic driving member 41 can be magnetically coupled with the magnetic rotating member 3 to generate a magnetic force (as shown by a force F in fig. 4). Furthermore, by uniformly distributing the four sets of magnetic driving assemblies 4 and the four magnetic rotators 3 along the circumferential direction of the susceptor assembly, and connecting the magnetic rotators 3 to the susceptor assembly disposed in the process chamber 100, the magnetic driving assemblies 4 are disposed outside the process chamber 100, so that the magnetic force generated between the magnetic driving members 41 and the magnetic rotators 3 can be divided into horizontal forces (e.g., force F in fig. 4)1Shown) and vertical forces (e.g., force F in the figure)2Shown) wherein the vertical force is capable of overcoming the weight of the magnetic rotary 3 and the base assembly to provide a vertical upward force to the base assembly, thereby imparting a tendency for the base assembly to move upward, away from the support plate 105, thereby reducing the friction between the support assembly and the support plate 105, and allowing the base assembly to be more easily driven to rotate; the base assembly can be suspended when the vertical force is increased to be able to completely overcome the weight of the base assembly.
In addition, by making the magnetic poles on the opposite sides of the two magnetic drivers 41 in the same set of magnetic drive units 4 the same, one of the magnetic drive units 4 can be made to be one ofThe magnetic poles of the magnetic driving member 41 are the same as the magnetic poles of the magnetic driving member 41 (indicated by the magnetic poles S of the magnetic driving member 41 in FIGS. 5 and 6) and the magnetic pole of the magnetic rotary member 3 (indicated by the magnetic poles N of the magnetic rotary member 3 in FIGS. 5 and 6), so that an attractive force (indicated by a force F in FIG. 5) is generated4Shown in fig. 5 and 6), a repulsive force (force F in fig. 5) is generated between the S-pole of the other magnetic driving member 41 (shown as the magnetic pole S of the magnetic driving member 41 in fig. 5 and 6) and the S-pole of the magnetic rotary member 3 (shown as the magnetic pole S of the magnetic rotary member 3 in fig. 5 and 6) due to the difference of the magnetic poles5Shown) so that the two magnetic drives 41 in each magnetic drive assembly 4 can act on the magnetic rotary member 3 to produce a rotational shear stress (force F in fig. 5)3Shown) which in turn causes the magnetic rotary member 3 to rotate counterclockwise as shown in fig. 5.
It should be noted that the relative position between the magnetic driving member 41 and each magnetic rotating member 3 in each magnetic driving assembly 4 shown in fig. 5 is only one case when the magnetic rotating member 3 is not rotated by the magnetic driving member 41, and when the magnetic rotating member 3 is rotated by the magnetic driving member 41, the relative position between the magnetic driving member 41 and each magnetic rotating member 3 in each magnetic driving assembly 4 will be changed, and when the magnetic rotating member 3 stops rotating again, the relative position between the magnetic driving member 41 and each magnetic rotating member 3 in each magnetic driving assembly 4 may also be changed.
However, the number of the magnetic drive assemblies 4 and the magnetic rotors 3 is not limited thereto. Furthermore, the magnetic rotation member 3 and the magnetic driving assembly 4 are not limited to be uniformly distributed and arranged in a square along the circumferential direction of the base assembly, for example, the magnetic rotation member 3 and the magnetic driving assembly 4 may be uniformly distributed and arranged in a circle along the circumferential direction of the base assembly. Further, the opposite magnetic poles of the two magnetic drivers 41 in the same set of magnetic driving units 4 are not limited to be S poles, for example, the opposite magnetic poles of the two magnetic drivers 41 in the same set of magnetic driving units 4 may be N poles, and when the opposite magnetic poles of the two magnetic drivers 41 in the same set of magnetic driving units 4 are N poles and the magnetic pole state of the magnetic rotator 3 is not changed, the magnetic rotator 3 rotates clockwise opposite to that shown in fig. 5.
As shown in fig. 2 and 4, alternatively, the magnetic drive assembly 4 may be located vertically above the magnetic rotary 3.
As shown in fig. 2, the magnetic drive assembly 4 may optionally be disposed on the process chamber 100.
In a preferred embodiment of the present invention, the magnetic rotating member 3 may be a magnetic conductive material, and the magnetic driving member 41 may be an induction coil.
Alternatively, the magnetic rotating member 3 may be a rotor coil and the magnetic driving member 41 may be a stator coil.
As shown in fig. 2, 5 and 7, in a preferred embodiment of the present invention, the susceptor assembly may include a susceptor 2 and a support coupling ring 5, the susceptor 2 being used to carry a wafer 9, the support coupling ring 5 being coupled to the susceptor 2, the magnetic rotator 3 being disposed in the support coupling ring 5; the support connecting ring 5 is provided with a base part 51 and a plug part 52, the plug part 52 is arranged on the base part 51, the base part 51 extends along the inner peripheral wall of the process chamber 100, and a gap is formed between the base part 51 and the inner peripheral wall of the process chamber 100; the bottom surface of the base 2 is provided with an insertion groove 21, and the insertion groove 21 is used for inserting the insertion part 52.
That is, the magnetic rotation member 3 is disposed in the support connection ring 5, and when the magnetic rotation member 3 is rotated by the magnetic driving member 41, the support connection ring 5 is rotated by the magnetic rotation member 3, and the insertion portion 52 of the support connection ring 5 is inserted into the insertion groove 21 on the bottom surface of the base 2, so that the base 2 can be rotated by the support connection ring 5. By providing a gap between the base portion 51 and the inner peripheral wall of the process chamber 100, it is possible to prevent the base portion 51 from rubbing against the inner peripheral wall of the process chamber 100 when the support coupling ring 5 rotates, thereby improving the service life of the spin base apparatus. Moreover, the annular support connecting ring 5 can reduce the probability of deformation of the support connecting ring 5 caused by heat, so that the stability of the pedestal 2 keeping horizontal can be improved, the rotating levelness and concentricity of the wafer 9 can be improved, and the process result can be improved.
As shown in fig. 7, the magnetic rotary member 3 may alternatively be provided in the base portion 51 or the socket portion 52.
As shown in fig. 4, 5, 7 and 8, alternatively, the radial dimension of the mating part 52 may be smaller than the radial dimension of the base part 51.
As shown in fig. 2, the base portion 51 may alternatively have a radial dimension greater than that of the base 2. This is because, as shown in fig. 1, a semiconductor processing apparatus of the prior art further includes a lower dome 18, the lower dome 18 is connected to the bottom of the process chamber 10, and the process gas in the semiconductor process may flow from above the susceptor 11 to below the susceptor 11 through the gap between the process chamber 10 and the susceptor 2, which may contaminate the lower dome 18 and affect the service life of the process chamber 10. As shown in fig. 2, in the spin susceptor apparatus according to an embodiment of the present invention, the support connection ring 5 is configured in an annular shape, the insertion portion 52 of the support connection ring 5 is inserted into the insertion groove 21 of the bottom surface of the susceptor 2, and the radial dimension of the base portion 51 is larger than the radial dimension of the susceptor 2, so that the gap between the base portion 51 and the inner peripheral wall of the process chamber 100 can be reduced, and thus the amount of the process gas flowing from above the susceptor 2 to below the susceptor 2 through the gap between the support connection ring 5 and the susceptor 2 in the semiconductor process can be reduced, and the pollution of the process gas to the lower dome 102 can be reduced, thereby improving the service life of the semiconductor processing equipment.
As shown in fig. 8, alternatively, the mating part 52 and the base part 51 may be of an integral structure.
In a preferred embodiment of the present invention, a friction layer may be disposed between the surfaces of the plug part 52 contacting the plug groove 21, and the friction layer is used to increase the friction force between the plug part 52 and the plug groove 21.
That is, the support coupling ring 5 rotates the base 2 by friction between the insertion part 52 and the insertion groove 21.
Alternatively, a friction layer may be provided on a surface of either one of the mating part 52 and the mating groove 21 that is in contact with the other.
Alternatively, friction layers may be provided on both surfaces of the insertion groove 21 and the insertion part 52 that contact each other.
In a preferred embodiment of the present invention, a thermal insulation layer may be further provided between the surfaces of the socket part 52 contacting the socket groove 21, and the thermal insulation layer is used for reducing the heat transfer between the base 2 and the socket part 52.
The design can reduce the temperature of the support connecting ring 5 in the semiconductor process, thereby reducing the probability of deformation of the magnetic rotating piece 3 due to heating, further improving the stability of the pedestal 2 for keeping horizontal, further improving the rotating levelness and concentricity of the wafer 9, improving the process result, avoiding the reduction of the service life of the magnetic rotating piece 3 due to heating, prolonging the service life of the magnetic rotating piece 3, and improving the service life and stability of the rotary pedestal device.
Alternatively, the insulating layer may be provided on the surface of either one of the mating part 52 and the mating groove 21 that contacts the other.
Alternatively, the insulating layer may be provided on both surfaces of the insertion groove 21 and the insertion part 52 which are in contact with each other.
In a preferred embodiment of the present invention, the friction layer and the thermal insulation layer may be both black quartz layers. The black quartz layer can have higher roughness on the one hand, and can have the effect of thermal insulation on the other hand to just can realize the effect of frictional layer and insulating layer with the help of black quartz layer, and then can reduce the technology degree of difficulty and the cost of frictional layer and insulating layer.
As shown in fig. 2 and 8, in a preferred embodiment of the present invention, a cooling channel 53 may be provided in the support connection ring 5, and the cooling channel 53 is used for introducing a cooling liquid into the support connection ring 5 to cool the support connection ring 5 and the magnetic rotation member 3.
Through set up cooling channel 53 in supporting the go-between 5, and let in the coolant liquid to cooling channel 53, can cool off supporting the go-between 5 and the magnetic rotation piece 3 that sets up in supporting the go-between 5 with the help of the coolant liquid, thereby reduce the temperature of supporting the go-between 5 and magnetic rotation piece 3 in semiconductor technology, reduce the probability that magnetic rotation piece 3 leads to the deformation owing to being heated, then can further improve the stability that base 2 keeps the levelness, and then can further improve levelness and the concentricity of wafer 9 rotation, improve the technology result, and, can also avoid the life-span reduction that magnetic rotation piece 3 leads to owing to being heated, thereby improve the life of magnetic rotation piece 3, improve the life and the stability of rotary base device.
As shown in fig. 2, fig. 3, fig. 10 and fig. 11, in a preferred embodiment of the present invention, a carrying portion 22 for carrying the wafer 9 may be disposed in the susceptor 2, a plurality of air holes 24 are disposed at the bottom of the carrying portion 22, and the plurality of air holes 24 are uniformly disposed on the carrying portion 22; the rotary base device may further include an air pipe 61, an air outlet end of the air pipe 61 is communicated with the air holes 24, an air inlet end of the air pipe 61 is used for being communicated with the air source 7 to convey air to the bearing portion 22, a first on-off valve 62 may be disposed on the air pipe 61, and the first on-off valve 62 is used for controlling on-off of the air pipe 61.
In practical application, the gas pipe 61 conveys the gas provided by the gas source 7 to the bearing part 22 through the plurality of gas holes 24, so that the wafer 9 can be jacked up by the gas, and the wafer 9 can be transferred between the manipulator and the pedestal 2. Specifically, after the wafer 9 carried by the robot enters the process chamber 100, the first on-off valve 62 may be opened to enable the gas pipe 61 to be in a connected state, so that the gas provided by the gas source 7 may be conveyed to the carrying portion 22 through the gas pipe 61, so that the wafer 9 carried on the robot may be jacked up by the gas, the wafer 9 may be separated from the robot and suspended on the robot, and then the robot may exit the process chamber 100, and then the first on-off valve 62 may be closed to enable the gas pipe 61 to be in an off state, so that the gas provided by the gas source 7 may not be conveyed to the carrying portion 22 through the gas holes 24 through the gas pipe 61, so that the wafer 9 may fall onto the susceptor 2 under the action of its own gravity, and the wafer 9 may be transferred to the susceptor 2 by the robot. After the semiconductor process is finished, the first on-off valve 62 can be opened to enable the gas pipe 61 to be in a communicated state, so that gas provided by the gas source 7 can be conveyed to the bearing part 22 through the gas holes 24 through the gas pipe 61, the wafer 9 borne on the base 2 can be jacked up by means of the gas, the wafer 9 is separated from the base 2 and suspended on the base 2, then the mechanical arm can enter the process chamber 100, then the first on-off valve 62 can be closed to enable the gas pipe 61 to be in an off state, so that the gas provided by the gas source 7 cannot be conveyed to the bearing part 22 through the gas holes 24 through the gas pipe 61, and then the wafer 9 can fall onto the mechanical arm under the action of self gravity, the wafer 9 is transferred to the mechanical arm through the base 2, and then the mechanical arm can bear the wafer 9 and exit the process chamber 100.
This is because, as shown in fig. 1, the lifting transmission member of a rotary susceptor apparatus in the prior art includes a lifting shaft 14 and a plurality of pins 15, a plurality of through holes are provided in a susceptor 11 for the pins 15 to pass through one to one, both ends of the lifting shaft 14 are respectively connected to a rotary lifting driving member 12 and the pins 15, the rotary lifting driving member 12 drives the lifting shaft 14 to lift the pins 15, so that the pins 15 pass through the through holes in the susceptor 11 one to one, thereby realizing the transfer of the wafer 9 between the robot and the susceptor 11, a lower heating member 17 is provided below the lifting shaft 14 for heating the susceptor 11, and since the process gas in the process chamber 10 may flow to the lower side of the susceptor 11 through the gap between the process chamber 10 and the susceptor 11 in the semiconductor process, the process gas may form deposits on the lifting shaft 14 to absorb heat, the heating of the susceptor 11 by the lower heating member 17 is affected, and the butting of the ejector pins 15 with the through holes in the susceptor 11 is affected due to the problem of the mounting accuracy of the lifting shaft 14, so that the transfer of the wafer 9 between the robot and the susceptor is affected, and the semiconductor process is affected.
As shown in fig. 2, 3, 10 and 11, in the spin base apparatus according to the embodiment of the present invention, the gas provided by the gas source 7 is delivered to the supporting portion 22 through the gas delivery pipe 61, so as to jack up the wafer 9 by the gas, thereby realizing the transfer of the wafer 9 between the robot and the base 2, and the wafer 9 can be transferred between the robot and the base 2 by using the lifting transmission member without using a spin base apparatus as in the prior art, thereby avoiding the heating of the base 2 in the semiconductor process from being affected due to the deposition generated on the lifting shaft 14, and further improving the process result.
And, the on-off of the air pipe 61 is controlled by the first on-off valve 62, when the air pipe 61 is required to convey the air provided by the air source 7 to the bearing part 22 through the plurality of air holes 24, the air pipe 61 is in the communicating state by opening the first on-off valve 62, so that the air pipe 61 can convey the air provided by the air source 7 to the bearing part 22 through the plurality of air holes 24, and when the air pipe 61 is required to stop conveying the air provided by the air source 7 to the bearing part 22 through the plurality of air holes 24, the air pipe 61 is in the off state by closing the first on-off valve 62, so that the air pipe 61 cannot convey the air provided by the air source 7 to the bearing part 22 through the plurality of air holes 24.
Alternatively, the gas provided by gas source 7 may comprise hydrogen.
Alternatively, the plurality of air holes 24 may be distributed on the bearing portion 22 in a central symmetry manner.
As shown in fig. 2 and 3, in a preferred embodiment of the present invention, the spin base apparatus may further include an air exhaust tube 63, an air inlet of the air exhaust tube 63 is communicated with the air holes 24, an air outlet of the air exhaust tube 63 is used for communicating with the air exhaust device 8, the air exhaust tube 63 may be provided with a second on-off valve 64, the second on-off valve 64 is used for controlling on-off of the air exhaust tube 63, and the air exhaust tube 63 is used for exhausting the gas between the wafer 9 and the carrier 22.
The gas between the wafer 9 and the bearing part 22 is pumped out by the pumping pipe 63, so that the upper and lower gas pressures of the wafer 9 are in a balanced state, a gap between the wafer 9 and the bearing part 22 is avoided, process gas above the wafer 9 is prevented from diffusing to the lower part of the wafer 9 from the gap between the wafer 9 and the bearing part 22, polycrystal growth on the lower surface of the wafer 9 is avoided, and the process result is further improved.
The second on-off valve 64 is used to control the on-off of the pumping pipe 63, so that when the pumping pipe 63 is required to pump the gas between the wafer 9 and the carrier 22, the pumping pipe 63 is in a connected state by opening the second on-off valve 64, so that the pumping pipe 63 can pump the gas between the wafer 9 and the carrier 22, and when the pumping pipe 63 is required to stop pumping the gas between the wafer 9 and the carrier 22, the pumping pipe 63 is in a closed state by closing the second on-off valve 64, so that the pumping pipe 63 cannot pump the gas between the wafer 9 and the carrier 22.
As shown in fig. 3, 10 and 11, in a preferred embodiment of the present invention, the carrier 22 may be provided with a first groove 25 and a second groove 26, the second groove 26 is provided at the bottom of the first groove 25, the radial dimension of the first groove 25 is greater than the radial dimension of the wafer 9, the radial dimension of the second groove 26 is smaller than the radial dimension of the wafer 9, and a step 27 for carrying the wafer 9 is formed at the connection between the first groove 25 and the second groove 26; the air hole 24 is provided on the bottom surface of the second groove 26.
That is, in practical application, the wafer 9 is supported on the step 27 and located in the first groove 25, there is a space of the second groove 26 between the lower surface of the wafer 9 and the supporting portion 22, by such a design, by making the radial dimension of the first groove 25 larger than the radial dimension of the wafer 9, the position of the wafer 9 can be limited by the first groove 25 when the wafer 9 falls onto the carrying part 22, and a space is formed between the lower surface of the wafer 9 and the carrying part 22 by the second groove 26, the area of direct contact between the wafer 9 and the supporting part 22 can be reduced, the heat conduction generated by the direct contact between the wafer 9 and the susceptor 2 can be reduced, the heat exchange between the wafer 9 and the susceptor 2 can be realized by the gas retained in the second groove 26, thereby improving the uniformity of heat exchange between the susceptor 2 and the susceptor, and further improving the process results.
As shown in fig. 2, 3, 10 and 11, in a preferred embodiment of the present invention, the susceptor 2 may further include a preheating part 23, the preheating part 23 is disposed around the carrying part 22 and is integrally disposed with the carrying part 22, and the preheating part 23 is used for preheating the process gas introduced into the process chamber 100.
The reason for such design is that, as shown in fig. 1, in the semiconductor processing equipment in the prior art, the process chamber 10 includes the preheating piece 19, the process chamber 10 is provided with the air inlet 16 through which the process gas enters the process chamber 10, the preheating piece 19 is connected to the process chamber 10 and disposed near the air inlet 16 for preheating the process gas entering the process chamber 10, because the preheating piece 19 and the base 2 are designed separately, a gap is formed between the preheating piece 19 and the base 11, so that the process gas above the base 11 may flow to the lower side of the base 11 through the gap between the preheating piece 19 and the base 11, and the rotating shaft 13, the lifting shaft 14 and the lower dome 18 below the base 11 are polluted, which results in poor heating effect of the base 11 and short service life of the process chamber 10.
As shown in fig. 1, 2, 3, 10 and 11, since the rotation shaft 13 and the susceptor 11 are driven by the rotation and lifting driving member 12 to rotate and lift in the prior art, the susceptor 11 has poor stability during rotation, and a large gap needs to be reserved between the susceptor 11 and the preheating member, which may cause the process gas above the susceptor 11 to enter below the susceptor 11, and affect the service life of the process chamber 10. In the rotary susceptor apparatus according to the embodiment of the present invention, the preheating part 23 surrounding the carrying part 22 is integrally disposed with the carrying part 22, and the preheating part 19 of a semiconductor process device in the prior art is not required to be disposed to preheat the process gas entering the process chamber 100, but the process gas entering the process chamber 100 can be preheated by the preheating part 23 of the susceptor 2, and the rotation of the susceptor 2 can be stably driven by magnetic coupling, so that only a small gap is provided between the susceptor 2 and the process chamber 100, and the susceptor 2 can rotate in the process chamber 100, so that the amount of the process gas flowing from above the susceptor 2 to below the susceptor 2 can be reduced, the amount of the process gas flowing to devices below the susceptor 2 can be reduced, the process effect can be further improved, and the service life of the process chamber 100 can be prolonged.
As shown in fig. 2, an embodiment of the present invention further provides a semiconductor processing apparatus including a process chamber 100 and a spin base assembly according to an embodiment of the present invention.
The semiconductor process equipment provided by the embodiment of the invention can improve the levelness and concentricity of the rotation of the wafer 9 and improve the process result by virtue of the rotary base device provided by the embodiment of the invention.
As shown in fig. 2, in a preferred embodiment of the present invention, the semiconductor processing apparatus may further include an upper dome 101, a lower dome 102, an upper heating element 103, a lower heating element 104 and a supporting plate 105, wherein the upper dome 101 is disposed at the top of the process chamber 100, the lower dome 102 is disposed at the bottom of the process chamber 100, the upper heating element 103 is disposed above the upper dome 101 and is used for heating the wafer 9 on the susceptor 2 through the upper dome 101, the lower heating element 104 is disposed below the lower dome 102 and is used for heating the susceptor 2 through the lower dome 102 and heating the wafer 9, the lower supporting plate 105 is disposed at the bottom of the process chamber 100 and is used for supporting the connecting ring 5 and the susceptor 2, and the process chamber 100 is provided with an air inlet 106 for allowing the process gas to enter the process chamber 100.
Alternatively, the upper heating member 103 may include an upper heating lamp.
Alternatively, the lower heating element 104 may comprise a lower heating lamp.
In summary, the rotary susceptor apparatus and the semiconductor processing apparatus provided in the embodiments of the present invention can improve the levelness and concentricity of the rotation of the wafer 9, and improve the process result.
It will be understood that the above embodiments are merely exemplary embodiments taken to illustrate the principles of the present invention, which is not limited thereto. It will be apparent to those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the invention, and these changes and modifications are to be considered as within the scope of the invention.
Claims (12)
1. A rotary pedestal device applied to a process chamber of semiconductor equipment is characterized by comprising a pedestal component, at least two magnetic rotating pieces and at least two groups of magnetic driving components, wherein:
the base assembly is arranged in the process chamber and used for bearing the wafer;
the magnetic rotating piece is connected with the base assembly;
the magnetic driving assembly is fixedly arranged outside the process chamber, the magnetic rotating part and the magnetic driving assembly are uniformly distributed in the circumferential direction of the base assembly, each magnetic driving assembly comprises two magnetic driving parts, the magnetic driving parts can drive the magnetic rotating parts to rotate through magnetic coupling, and then the magnetic rotating parts drive the base assembly to rotate around the axis of the base assembly.
2. The rotary base unit according to claim 1, wherein the magnetic poles on the opposite sides of the two magnetic driving members in the same set of magnetic driving units are the same.
3. The rotary base unit according to claim 1, wherein the magnetic rotary member is a magnetically conductive material and the magnetic drive member is an induction coil.
4. The rotary pedestal device according to claim 1, wherein the pedestal assembly comprises a pedestal for carrying the wafer and a support coupling ring connected to the pedestal, the magnetic rotation member being disposed in the support coupling ring; the support connecting ring is provided with a base part and an inserting part, the inserting part is arranged on the base part, the base part extends along the inner peripheral wall of the process chamber, and a gap is formed between the base part and the inner peripheral wall of the process chamber; the bottom surface of base is provided with the inserting groove, the inserting groove is used for pegging graft the grafting portion.
5. The rotating base device as claimed in claim 4, wherein a friction layer is provided between the surfaces of the plug part contacting the plug groove, and the friction layer is used for increasing the friction force between the plug part and the plug groove.
6. The rotating base unit according to claim 5 wherein a thermal insulation layer is provided between the surface of the socket in contact with the socket for reducing heat transfer between the base and the socket.
7. The rotary pedestal device according to claim 6, wherein the friction layer and the thermal insulation layer are both black quartz layers.
8. The rotary pedestal device according to claim 4, wherein a cooling channel is disposed in the support connection ring for passing a cooling fluid into the support connection ring to cool the support connection ring and the magnetic rotary member.
9. The rotary pedestal device according to claim 4, wherein a carrier for carrying a wafer is disposed in the pedestal, a plurality of air holes are disposed at the bottom of the carrier, and the air holes are uniformly disposed on the carrier;
the rotary base device further comprises a gas conveying pipe, the gas outlet end of the gas conveying pipe is communicated with the gas holes, the gas inlet end of the gas conveying pipe is communicated with a gas source to convey gas to the bearing portion, and a first on-off valve is arranged on the gas conveying pipe and used for controlling on-off of the gas conveying pipe.
10. The spin pedestal device according to claim 9, further comprising an exhaust tube, wherein an air inlet of the exhaust tube is communicated with the air hole, an air outlet of the exhaust tube is used for being communicated with an air extractor, a second on-off valve is disposed on the exhaust tube, the second on-off valve is used for controlling on-off of the exhaust tube, and the exhaust tube is used for exhausting air between the wafer and the carrier.
11. The rotary pedestal device according to claim 9, wherein the carrying part is provided with a first groove and a second groove, the second groove is arranged at the bottom of the first groove, the radial dimension of the first groove is larger than that of the wafer, the radial dimension of the second groove is smaller than that of the wafer, and a step for carrying the wafer is formed at the joint of the first groove and the second groove; the air hole is arranged on the bottom surface of the second groove.
12. A semiconductor processing apparatus comprising a process chamber and a rotating pedestal device according to any one of claims 1 to 11.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210268587.9A CN114649256A (en) | 2022-03-18 | 2022-03-18 | Rotary base device and semiconductor process equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210268587.9A CN114649256A (en) | 2022-03-18 | 2022-03-18 | Rotary base device and semiconductor process equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN114649256A true CN114649256A (en) | 2022-06-21 |
Family
ID=81994549
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210268587.9A Pending CN114649256A (en) | 2022-03-18 | 2022-03-18 | Rotary base device and semiconductor process equipment |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN114649256A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115125504A (en) * | 2022-06-28 | 2022-09-30 | 北京北方华创微电子装备有限公司 | Semiconductor process chamber |
-
2022
- 2022-03-18 CN CN202210268587.9A patent/CN114649256A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115125504A (en) * | 2022-06-28 | 2022-09-30 | 北京北方华创微电子装备有限公司 | Semiconductor process chamber |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR100491680B1 (en) | Substrate processing apparatus and substrate processing method | |
| US20090120368A1 (en) | Rotating temperature controlled substrate pedestal for film uniformity | |
| US7887670B2 (en) | Gas introducing mechanism and processing apparatus for processing object to be processed | |
| JP2013516080A (en) | Gas injection unit and thin film deposition apparatus and method using the same | |
| TW201929144A (en) | Cryogenically cooled rotatable electrostatic chuck | |
| CN114649256A (en) | Rotary base device and semiconductor process equipment | |
| CN102217055A (en) | Substrate processing method and substrate processing apparatus | |
| CN110050334A (en) | Rotatable electrostatic chuck with back gas source | |
| US10351956B2 (en) | Integrated two-axis lift-rotation motor center pedestal in multi-wafer carousel ALD | |
| CN116387224A (en) | Vacuum adsorption system and method | |
| KR102374532B1 (en) | Integrated two-axis lift-rotation motor center pedestal in multi-wafer carousel ald | |
| CN110875167A (en) | Cooling chamber and semiconductor processing equipment | |
| CN110323160B (en) | Wafer boat cooling device | |
| TW202336906A (en) | Thin film deposition device preventing the substrate from the problem of warping, fragments, and poor contact with the support base due to the impact force | |
| KR100511020B1 (en) | Diffusion process equipment for semiconductor device manufacturing | |
| US20220076971A1 (en) | Self aligning wafer carrier pedestal element with power contacts | |
| US20220076978A1 (en) | Alignment of an electrostatic chuck with a substrate support | |
| KR20230048506A (en) | Electrostatic chuck with heating and chucking capabilities | |
| US20230170247A1 (en) | Substrate processing apparatus | |
| JP4115331B2 (en) | Substrate processing equipment | |
| KR20090020797A (en) | Semiconductor manufacturing apparatus | |
| TWI802925B (en) | Rotating shaft sealing device and processing apparatus for semiconductor substrate using the same | |
| KR102673030B1 (en) | Layer deposition apparatus having a rotating gas turret | |
| CN216998571U (en) | Deposition apparatus for improving substrate temperature distribution | |
| CN117431623A (en) | Epitaxial growth susceptor and epitaxial growth apparatus |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |