CN114646787A - Chip test probe and chip test device - Google Patents
Chip test probe and chip test device Download PDFInfo
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- CN114646787A CN114646787A CN202210537148.3A CN202210537148A CN114646787A CN 114646787 A CN114646787 A CN 114646787A CN 202210537148 A CN202210537148 A CN 202210537148A CN 114646787 A CN114646787 A CN 114646787A
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- 238000012360 testing method Methods 0.000 title claims abstract description 270
- 239000000523 sample Substances 0.000 title claims abstract description 196
- 230000003287 optical effect Effects 0.000 claims abstract description 31
- 230000002093 peripheral effect Effects 0.000 claims abstract description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 10
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 5
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 5
- 230000033001 locomotion Effects 0.000 claims description 12
- 238000005259 measurement Methods 0.000 abstract description 8
- 238000010586 diagram Methods 0.000 description 17
- 238000009529 body temperature measurement Methods 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- 230000008859 change Effects 0.000 description 6
- 239000013307 optical fiber Substances 0.000 description 6
- 230000005540 biological transmission Effects 0.000 description 3
- 239000000835 fiber Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000001514 detection method Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000007373 indentation Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004861 thermometry Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/06—Measuring leads; Measuring probes
- G01R1/067—Measuring probes
- G01R1/073—Multiple probes
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/0096—Radiation pyrometry, e.g. infrared or optical thermometry for measuring wires, electrical contacts or electronic systems
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/282—Testing of electronic circuits specially adapted for particular applications not provided for elsewhere
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Abstract
The invention provides a chip test probe and a chip test device, and belongs to the technical field of chip test. The chip test probe includes: the test probe body is used for detecting an electric signal on the chip to be tested when the test end part of the test probe body is contacted with the chip to be tested; and the light guide part is made of high-purity silicon dioxide and used for transmitting optical signals, the light guide part is arranged on the peripheral side surface of the test probe body or in the test probe body, one end of the light guide part is used for being arranged opposite to the chip to be tested, and the other end of the light guide part is used for being connected with an infrared temperature measuring device, so that the infrared temperature measuring device can calculate the temperature of the chip to be tested according to the received optical signals transmitted by the chip to be tested and transmitted through the light guide part. The chip test probe and the chip test device can improve the measurement accuracy of the temperature of the chip.
Description
Technical Field
The invention relates to the technical field of chip testing, in particular to a chip testing probe and a chip testing device.
Background
In the process of converting electric energy into optical energy, a large part of electric energy is converted into unnecessary heat energy by the laser, and the performance and the service life of a laser chip can be influenced by the heat energy, so that the temperature of the laser chip needs to be tested, and the chip with overhigh temperature is screened out as the chip which does not meet the performance.
As shown in fig. 1, a thermistor 1 is generally added to a laser chip 3 in the prior art, and the temperature of the laser chip 3 is predicted by measuring the resistance value of the thermistor. This solution requires the addition of corresponding test probes 2 on the test fixture for reading the information of the thermistor 1. The probes 4 still need to be tested with electrical signals when testing electrical signals.
However, in the process of testing through the thermistor, the thermistor needs to be powered up, extra heat is brought in the process, the temperature of the chip is increased, and therefore, the test data are inaccurate, and the thermistor which is a mode for indirectly testing the temperature of the chip is also a cause of error. In addition, in order to increase the position of attaching the thermistor and the test points, the packaging mode of the chip needs to be changed, so that the size of the chip cannot be reduced, and the increased test electric shock (namely the thermistor and the corresponding test probe) also increases the test difficulty.
Disclosure of Invention
It is an object of the first aspect of the present invention to provide a chip test probe capable of improving the accuracy of measurement of the temperature of a chip.
The invention further aims to improve the condition that the optical module and the connector to be tested are damaged or generate indentation.
It is an object of the second aspect of the present invention to provide a chip testing apparatus including the above chip testing probe, which can improve the accuracy of measurement of the temperature of a chip.
In particular, the present invention provides a chip test probe comprising:
the test probe body is used for detecting an electric signal on the chip to be tested when the test end part of the test probe body is contacted with the chip to be tested; and
the light guide part is made of high-purity silicon dioxide and used for conducting optical signals, the light guide part is arranged on the peripheral side surface of the test probe body or in the test probe body, one end of the light guide part is used for being arranged opposite to the chip to be tested, and the other end of the light guide part is used for being connected with an infrared temperature measuring device, so that the infrared temperature measuring device can calculate the temperature of the chip to be tested according to the received optical signals sent by the chip to be tested and conducted through the light guide part.
Optionally, the bottom surface of the light guide portion is higher than the testing end portion of the testing probe body, so that a preset distance is reserved between the bottom surface of the light guide portion and the chip to be tested when the testing probe body is in contact with the chip to be tested, the bottom surface of the light guide portion is provided with a first reflective film which can reflect and transmit light, the light guide portion is further connected with a laser testing device, and the light guide portion is used for conducting a testing laser signal emitted by the laser testing device and a return laser signal reflected back by the chip to be tested.
Optionally, a second reflective film is disposed at an outer surface of the light guide portion disposed on the circumferential side surface of the test probe body, so that the optical signal is concentrated in the light guide portion.
Optionally, the thickness of the light guide part disposed on the peripheral side surface of the test probe body is in the order of micrometers.
Optionally, the light guide part is disposed inside the test probe body, and the test end of the test probe body is provided with a light guide port for communicating the light guide part with the outside so as to collect more optical signals of the chip to be tested.
Particularly, the invention also provides a chip testing device which comprises an infrared temperature measuring device and the chip testing probe, wherein the infrared temperature measuring device is used for calculating the temperature of the chip to be tested according to the received optical signal reflected by the chip to be tested.
Optionally, the chip testing apparatus further includes a laser testing apparatus, which includes:
the light source meter is used for sending a test laser signal to the light guide part;
and the laser analyzer is connected with the light source meter and the chip test probe and is used for judging the damage state of the chip test probe according to the test laser signal and the return laser signal returned by the chip to be tested through the light guide part.
Optionally, the chip testing apparatus further includes:
the probe fixing seat is used for fixing a plurality of chip test probes;
the switching chip is fixedly connected with the probe fixing seat and is electrically connected with the test probe body of each chip test probe; and
and the test source meter is electrically connected with the switching chip and is used for sending out test electric signals.
Optionally, the chip testing apparatus further includes:
and the motion control module is fixedly connected with the probe fixing seat and is used for driving the probe fixing seat and the switching chip to move.
Optionally, the chip testing apparatus further includes:
and the pressure sensor is used for testing the pressure at the chip testing probe so as to control the motion control module to stop moving when the pressure at the chip testing probe reaches a preset value.
According to one embodiment of the invention, the chip test probe integrates the functions of collecting electrical signals and optical information, and the light guide part is added on the original test probe body for collecting the electrical signals, so that the infrared signals of the chip can be transmitted along the extension direction of the test probe body, and the temperature of the chip is calculated by utilizing the infrared signals. The chip temperature measuring mode does not need to adopt a thermistor and a related circuit, so the influence of heat of a measuring element per se is avoided, and the temperature is measured by infrared light radiated by the chip per se, so the measuring accuracy is high.
Furthermore, the original test probe body for collecting the electric signals is utilized to measure the temperature, so that the number of probes specially used for measuring the temperature of the chip is reduced, the total number of the probes is reduced, more measuring points are favorably arranged on one chip, the measuring data is richer, and the measuring result is more reliable.
According to one embodiment of the invention, the chip test probe can also conduct laser, and the distance between the chip test probe and the chip is calculated by utilizing the incident laser and the reflected laser, so that whether the quality problem exists in the chip test probe or not is judged, whether the chip test probe is damaged or dirty or not is judged, the state of the chip test probe is judged in advance, and the problem of misjudgment of chip scrapping caused by the quality problem of the chip test probe is avoided.
According to one embodiment of the invention, the micron-sized light guide part is arranged on the surface of the test probe to meet the transmission requirement of the optical signal, the extremely thin light guide part basically does not change the outer diameter of the chip test probe, and the method can be directly applied to the chip test probes of the existing chip test devices, so that the chip test probes have the detection functions of the optical signal and the electric signal, and the method is simple and easy to implement and has wide application scenes.
The above and other objects, advantages and features of the present invention will become more apparent to those skilled in the art from the following detailed description of specific embodiments thereof, taken in conjunction with the accompanying drawings.
Drawings
Some specific embodiments of the invention will be described in detail hereinafter, by way of illustration and not limitation, with reference to the accompanying drawings. The same reference numbers in the drawings identify the same or similar elements or components. Those skilled in the art will appreciate that the drawings are not necessarily to scale. In the drawings:
FIG. 1 is a schematic diagram of testing the temperature of a laser chip in the prior art;
FIG. 2 is a schematic cross-sectional view of a chip test probe according to an embodiment of the present invention;
FIG. 3 is a schematic cross-sectional view of a chip test probe according to another embodiment of the present invention;
FIG. 4 is a schematic diagram of the temperature measurement of a chip test probe according to one embodiment of the present invention;
FIG. 5 is a schematic diagram of the connection of a chip test probe to an infrared thermometry device according to one embodiment of the present invention;
FIG. 6 is a schematic diagram of ranging of a chip test probe according to one embodiment of the present invention;
FIG. 7 is a schematic diagram of the connection of a chip test probe to a laser test apparatus according to one embodiment of the present invention;
FIG. 8 is a schematic diagram of a frame of a chip testing apparatus according to one embodiment of the present invention;
FIG. 9 is a schematic structural diagram of a chip testing apparatus and a laser chip according to an embodiment of the present invention;
FIG. 10 is a schematic structural diagram of a chip testing apparatus according to an embodiment of the present invention;
FIG. 11 is a schematic structural diagram of a chip testing apparatus according to another embodiment of the present invention;
fig. 12 is a partially enlarged view of the chip testing apparatus in fig. 11.
Reference numerals:
1-thermistor, 2-test probe, 3-laser chip, 4-electrical signal test probe;
100-chip testing device, 10-chip testing probe, 101-first chip testing probe, 102-second chip testing probe, 11-testing probe body, 111-testing end part, 112-light guide port, 12-light guide part, 13-reflection film, 20-infrared temperature measuring device, 30-laser testing device, 31-light source meter, 32-laser analyzer, 40-probe fixing seat, 50-motion control module, 60-pressure sensor, 70-switching chip, 80-testing source meter, 90-power source meter, 41-probe card module and 411-groove;
200-a chip to be tested, 201-a laser;
301-fiber connector, 302-external fiber.
Detailed Description
Fig. 2 is a schematic cross-sectional view of a chip test probe 10 according to an embodiment of the present invention. Fig. 3 is a schematic cross-sectional view of a chip test probe 10 according to another embodiment of the present invention. Fig. 4 is a schematic diagram illustrating the temperature measurement of the chip test probe 10 according to an embodiment of the present invention, and the dotted arrow in fig. 4 indicates the conduction direction of the infrared signal emitted from the chip 200 to be tested. FIG. 5 is a schematic diagram of the connection of the chip test probe 10 and the infrared temperature measuring device 20 according to one embodiment of the present invention. As shown in fig. 2, in one embodiment, chip test probe 10 includes a test probe body 11 and a light guide portion 12. The test probe body 11 is used to detect an electrical signal on the chip 200 to be tested when the test end 111 thereof is in contact with the chip 200 to be tested. Optionally, the chip 200 to be tested is a laser 201 chip. The light guide portion 12 is made of high-purity silicon dioxide (silicon dioxide containing less than one ten-thousandth of metal impurities and less than one ten-thousandth of non-metal impurities), and is used for guiding an optical signal, which may be an optical signal emitted by the chip 200 to be tested or a specific optical signal emitted by a light source device. The light guide part 12 is provided on the peripheral side surface of the test probe body 11 (see fig. 2) or inside the test probe body 11 (see fig. 3). One end of the light guide portion 12 is used for being arranged opposite to the chip 200 to be tested, and the other end is used for being connected with the infrared temperature measuring device 20, so that the infrared temperature measuring device 20 can calculate the temperature of the chip 200 to be tested according to the received optical signal which is sent by the chip 200 to be tested and is transmitted by the light guide portion 12. It should be noted that, here, the relative arrangement of the light guide portion 12 and the chip 200 to be tested means an opposite arrangement without other barriers, and the light guide portion 12 and the chip 200 to be tested may have a certain distance, as in the embodiment in fig. 3, when the light guide portion 12 is arranged inside the test probe body 11, a through hole needs to be started inside the test probe body 11 for penetrating the light guide portion 12, so that the end portion of the light guide portion 12 may directly face the chip 200 to be tested without being blocked. The infrared temperature measuring device 20 generally includes an optical system, a photodetector, a signal amplifier, a signal processing unit, a display unit, and so on. The specific infrared temperature measurement principle is not described herein again.
As shown in fig. 4, the infrared light signal emitted by the chip 200 to be tested is transmitted through the light guide portion 12, and then the signal is transmitted to the infrared temperature measuring device 20 (for example, the light guide portion 12 of the chip test probe 10 is connected to an external optical fiber through an optical fiber connector, and then the signal is transmitted to the infrared temperature measuring device 20 through the optical fiber), and the infrared temperature measuring device 20 can calculate the temperature of the chip 200 to be tested according to the received infrared light signal. The specific method of infrared temperature measurement is the prior art, and is not described herein again.
The chip test probe 10 of this embodiment integrates the collection function of electrical signals and optical information, and adds the light guide portion 12 on the original test probe body 11 that collects electrical signals, so that the infrared signal of the chip can be transmitted along the extending direction of the test probe body 11, and then the temperature of the chip is calculated by using the infrared signal. The chip temperature measurement mode does not need to adopt a thermistor and a related circuit, so that the influence of heat of a measurement element is avoided, and the temperature is measured by infrared light radiated by the chip, so that the measurement accuracy is high.
Furthermore, the original test probe body 11 for collecting electric signals is used for measuring the temperature, so that the number of probes specially used for measuring the temperature of the chip is reduced, the total number of the probes is reduced, more measuring points can be arranged on one chip, the measuring data is richer, and the measuring result is more reliable.
Fig. 6 is a distance measuring principle diagram of the chip test probe 10 according to one embodiment of the present invention, and the dotted arrows in fig. 6 are the conduction directions of the test laser signal and the return laser signal. Fig. 7 is a schematic diagram of the connection of the chip test probe 10 and the laser test apparatus 30 according to an embodiment of the present invention. As shown in fig. 2 or fig. 3, in an embodiment, a bottom surface of the light guide portion 12 (i.e., an end surface of the light guide portion 12 at an end opposite to the test chip 200) is higher than the test end portion 111 of the test probe body 11, so that a predetermined distance (see D in fig. 2) is provided between the bottom surface of the light guide portion 12 and the test chip 200 when the test probe body 11 contacts the test chip 200, and the bottom surface of the light guide portion 12 is provided with a first reflective film capable of reflecting and transmitting light, for example, a semi-reflective and semi-transmissive film. As shown in fig. 7, the light guide part 12 is further connected to a laser testing device 30 (including a light source meter 31 and a laser analyzer 32), and the light guide part 12 is used for transmitting a test laser signal emitted by the laser testing device 30 and a return laser signal reflected back by the chip to be tested. The laser testing device 30 can calculate the distance between the bottom surface of the light guide portion 12 and the chip 200 to be tested by analyzing the difference between the testing laser signal and the returning laser signal, and can determine whether the chip testing probe 10 has a change by recording the distance value, for example, the distance value changes after the chip testing probe 10 is dirty or damaged, and can determine whether the chip testing probe 10 has a quality problem by the change of the distance value.
The chip testing probe 10 of the embodiment can also conduct laser signals, and utilize the incident and reflected laser signals to calculate the distance between the chip testing probe 10 and the chip, so as to determine whether the chip testing probe 10 has quality problems, determine whether the chip testing probe 10 has damage or dirt, and the like, thereby determining the state of the chip testing probe 10 in advance, and avoiding the problem that the chip is rejected by misjudgment due to the quality problems of the chip testing probe 10.
In a further embodiment, as shown in fig. 2, a second reflective film 13 is disposed at an outer surface of the light guide part 12 disposed at the circumferential side surface of the test probe body 11, so that the optical signal is concentrated in the light guide part 12. The material of the second reflective film 13 may be a material having a transmittance much lower than that of the light guide portion 12, such as an aluminum layer, a silver layer, or the like commonly used for the back surface of a mirror. Since the test probe body 11 is generally circular in cross section and the test probe body 11 is generally opaque, when the light guide portion 12 is disposed inside the test probe body 11, a reflective film does not need to be added, and when the light guide portion 12 is disposed on the peripheral side surface of the test probe body 11, a second reflective film 13 needs to be disposed on the peripheral side of the light guide portion 12 to prevent a large amount of optical signals from being transmitted out of the light guide portion 12. The accuracy of measurement is improved.
In one embodiment, the thickness of the light guide part 12 disposed on the peripheral surface of the test probe body 11 is in the order of micrometers.
Experiments show that the transmission requirement of optical signals can be met by arranging the micron-sized light guide part 12 on the surface of the test probe body 11, the outer diameter of the chip test probe 10 is basically not changed by the extremely thin light guide part 12, and the method can be directly applied to the chip test probes 10 of the existing chip test devices 100, so that the chip test probes have the detection functions of optical signals and electric signals, and the method is simple and easy to implement and has wide application scenes.
In a further embodiment, as shown in fig. 3, the light guide portion 12 is disposed inside the test probe body 11, and the test end 111 of the test probe body 11 is provided with a light guide port 112 for communicating the light guide portion 12 with the outside so as to collect more optical signals of the chip 200 to be tested.
In this embodiment, the light guide opening 112 is provided, so that the lighting range of the light guide portion 12 is expanded, and light signals in more directions can be emitted into the light guide portion 12 through the light guide opening 112, so that the data of the infrared light signals is more, and the accuracy of chip temperature measurement is improved.
Fig. 8 is a schematic diagram of a frame of the chip testing apparatus 100 according to an embodiment of the present invention. Fig. 9 is a schematic structural diagram of the chip testing apparatus 100 and the laser 201 chip according to an embodiment of the invention. As shown in fig. 8, the present invention further provides a chip testing apparatus 100, in one embodiment, the chip testing apparatus 100 includes an infrared temperature measuring device 20 and a chip testing probe 10 in any one or a combination of the above embodiments. The infrared temperature measuring device 20 is configured to calculate the temperature of the chip 200 according to the received optical signal reflected by the chip 200. The infrared temperature measuring device 20 generally includes an optical system, a photodetector, a signal amplifier, a signal processing unit, and a display unit. The specific infrared temperature measurement principle is not described herein again. When the test probe body 11 performs an electrical signal test, as shown in fig. 9, the test end 111 of the test probe body 11 contacts the surface of the chip 200 to be tested, and the infrared light on the surface of the chip 200 to be tested is transmitted to the infrared temperature measuring device 20 as an infrared signal through the light guide portion 12.
The chip testing device 100 of the embodiment integrates the electrical signal and optical information collection function of the chip testing probe 10, and the light guide part 12 is added on the original testing probe body 11 for collecting the electrical signal, so that the infrared signal of the chip can be transmitted along the extending direction of the testing probe body 11, and the temperature of the chip is calculated by using the infrared signal. The chip temperature measurement mode does not need to adopt a thermistor and a related circuit, so that the influence of heat of a measurement element is avoided, and the temperature is measured by infrared light radiated by the chip, so that the measurement accuracy is high.
Furthermore, the original test probe body 11 for collecting electric signals is used for measuring the temperature, so that the number of probes specially used for measuring the temperature of the chip is reduced, the total number of the probes is reduced, more measuring points can be arranged on one chip, the measuring data is richer, and the measuring result is more reliable.
In a further embodiment, the chip testing device 100 further comprises a laser testing device 30, and the laser testing device 30 comprises a light source table 31 and a laser analyzer 32. The light source meter 31 is used for emitting a test laser signal to the light guide portion 12, and the test laser signal is irradiated to the chip surface through the light guide portion 12 and then reflected back. The laser analyzer 32 is connected to both the light source meter 31 and the chip test probe 10, and is configured to determine a damage state of the chip test probe 10 according to the test laser signal and the return laser signal returned by the chip 200 to be tested through the light guide portion 12. Specifically, the laser analyzer 32 can calculate the distance between the bottom surface of the light guide portion 12 and the chip 200 to be tested by analyzing and calculating the wavelength change, the return time, the loss, and the like between the test laser signal and the return laser signal, and can determine whether the chip test probe 10 has a change by recording the distance value, for example, the distance value changes after the chip test probe 10 is contaminated or damaged, and can determine whether the chip test probe 10 has a quality problem by the change of the distance value.
In this embodiment, the chip test probe 10 can also conduct a laser signal, and the distance between the chip test probe 10 and the chip is calculated by using the incident and reflected laser signals, so as to determine whether the chip test probe 10 has a quality problem, and determine whether the chip test probe 10 has damage or contamination, etc., thereby determining the state of the chip test probe 10 in advance, and avoiding the problem of misjudgment of chip rejection due to the quality problem of the chip test probe 10 itself.
As shown in fig. 9, in one embodiment, the chip testing apparatus 100 further includes a probe holder 40, a transfer chip 70 and a test source table 80. The probe holders 40 are used to hold a plurality of chip test probes 10. The adaptor chip 70 is fixedly connected to the probe holder 40 and electrically connected to each of the chip test probes 10. The test source meter 80 is electrically connected to the adaptor chip 70 and configured to emit a test electrical signal, as shown in fig. 6, the test electrical signal is transmitted to a contact to be tested of the chip through the first chip test probe 101, and a feedback electrical signal is returned from the second chip test probe 102, where the direction of the solid arrow in fig. 6 represents the transmission direction of the test electrical signal and the feedback electrical signal. The electrical performance of the chip can be measured by analyzing the feedback electrical signal and the test electrical signal. The first chip test probe 101 and the second chip test probe 102 correspond to a positive electrode and a negative electrode.
In a further embodiment, the chip testing apparatus 100 further includes a motion control module 50, wherein the motion control module 50 is fixedly connected to the probe holder 40, and is configured to drive the probe holder 40 to move, so as to drive all the chip testing probes 10 to move, so that the chip testing probes 10 can move to positions contacting with the contacts to be tested on the chip. In one embodiment, the motion control module 50 can achieve movement of the probe holder 40 in 6 degrees of freedom, i.e., rotation in three directions and movement in three directions. In a further embodiment, the chip testing apparatus 100 further includes a pressure sensor 60 for testing the pressure at the chip testing probe 10 to control the motion control module 50 to stop the motion when the pressure at the chip testing probe 10 reaches a preset value. Therefore, the motion control module 50 can be controlled to stop moving when the chip test probe 10 contacts the contact to be tested, and the normal contact between the normal chip test probe 10 and the contact to be tested is ensured.
Of course, as shown in fig. 5, the chip testing apparatus 100 further includes a power meter 90 for supplying power to the chip testing probe 10 and the chip to form a loop so as to form the electrical signal.
Fig. 10 is a schematic structural diagram of a chip testing apparatus 100 according to an embodiment of the present invention. In another embodiment, as shown in fig. 10, the probe holder 40 and the adapting chip 70 are fixedly connected to form a probe card module 41, and the probe card module 41 has a partial disk shape and has a plurality of grooves on the surface thereof for placing a plurality of chip testing probes 10. In this embodiment, the light guide part 12 is disposed inside the test probe body 11, and each chip test probe 10 can be fixed at the groove by welding, so that the test probe body 11 and the probe card module 41 can be electrically conducted to transmit an electrical signal.
Fig. 11 is a schematic structural diagram of a chip testing apparatus 100 according to another embodiment of the present invention. Fig. 12 is a partially enlarged view of the chip testing device 100 in fig. 11. In another embodiment, as shown in fig. 11, in this embodiment, the light guide portion 12 is disposed on the peripheral surface of the test probe body 11, the probe card module 41 is also partially disc-shaped and is also provided with a groove 411 for placing the chip test probe 10, one end of the test probe body 11 away from the chip 200 to be tested can be connected to the external optical fiber 302 through the optical fiber connector 301, and the external optical fiber 302 can be fixed on a fiber fixing base (not shown). Since the light guide parts 12 of the present embodiment are disposed on the peripheral side surface of the test probe body 11, the light guide parts 12 (see fig. 12) of the contact parts of the chip test probes 10 and the probe card module 41 are removed, and the exposed test probe body 11 can be soldered to the probe card module 41 so that the test probe body 11 can be in conductive contact with the probe card module 41.
Thus, it should be appreciated by those skilled in the art that while a number of exemplary embodiments of the invention have been illustrated and described in detail herein, many other variations or modifications consistent with the principles of the invention may be directly determined or derived from the disclosure of the present invention without departing from the spirit and scope of the invention. Accordingly, the scope of the invention should be understood and interpreted to cover all such other variations or modifications.
Claims (10)
1. A chip test probe, comprising:
the test probe body is used for detecting an electric signal on the chip to be tested when the test end part of the test probe body is contacted with the chip to be tested; and
the light guide part is made of high-purity silicon dioxide and used for conducting optical signals, the light guide part is arranged on the peripheral side surface of the test probe body or in the test probe body, one end of the light guide part is used for being arranged opposite to the chip to be tested, and the other end of the light guide part is used for being connected with an infrared temperature measuring device, so that the infrared temperature measuring device can calculate the temperature of the chip to be tested according to the received optical signals sent by the chip to be tested and conducted through the light guide part.
2. The chip test probe of claim 1,
the bottom surface of the light guide part is higher than the testing end part of the testing probe body, so that a preset distance is reserved between the bottom surface of the light guide part and the chip to be tested when the testing probe body is in contact with the chip to be tested, the bottom surface of the light guide part is provided with a first reflecting film which can reflect and transmit, the light guide part is also connected with a laser testing device, and the light guide part is used for conducting testing laser signals sent by the laser testing device and return laser signals reflected back by the chip to be tested.
3. The chip test probe according to claim 1 or 2,
and a second reflection film is arranged on the outer surface of the light guide part on the peripheral side surface of the test probe body, so that the optical signal is concentrated in the light guide part.
4. The chip test probe of claim 3,
the thickness of the light guide part arranged on the peripheral side surface of the test probe body is micron-sized.
5. The chip test probe according to claim 1 or 2,
the light guide part is arranged in the test probe body, and the test end part of the test probe body is provided with a light guide port for communicating the light guide part with the outside so as to collect more optical signals of the chip to be tested.
6. A chip testing device, characterized by comprising an infrared temperature measuring device and the chip testing probe of any one of claims 1-5, wherein the infrared temperature measuring device is used for calculating the temperature of a chip to be tested according to a received optical signal reflected by the chip to be tested.
7. The chip testing apparatus according to claim 6, further comprising a laser testing apparatus comprising:
the light source meter is used for sending a test laser signal to the light guide part;
and the laser analyzer is connected with the light source meter and the chip test probe and is used for judging the damage state of the chip test probe according to the test laser signal and the return laser signal returned by the chip to be tested through the light guide part.
8. The chip test apparatus according to claim 6 or 7, further comprising:
the probe fixing seat is used for fixing a plurality of chip test probes;
the switching chip is fixedly connected with the probe fixing seat and is electrically connected with the test probe body of each chip test probe; and
and the test source meter is electrically connected with the switching chip and is used for sending out a test electric signal.
9. The chip test apparatus according to claim 8, further comprising:
and the motion control module is fixedly connected with the probe fixing seat and is used for driving the probe fixing seat and the switching chip to move.
10. The chip test apparatus according to claim 9, further comprising:
and the pressure sensor is used for testing the pressure at the chip testing probe so as to control the motion control module to stop moving when the pressure at the chip testing probe reaches a preset value.
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| CN202210537148.3A CN114646787A (en) | 2022-05-18 | 2022-05-18 | Chip test probe and chip test device |
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Cited By (1)
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