CN114645327A - Perovskite single crystal and growth method thereof - Google Patents
Perovskite single crystal and growth method thereof Download PDFInfo
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- CN114645327A CN114645327A CN202210130269.6A CN202210130269A CN114645327A CN 114645327 A CN114645327 A CN 114645327A CN 202210130269 A CN202210130269 A CN 202210130269A CN 114645327 A CN114645327 A CN 114645327A
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- 239000013078 crystal Substances 0.000 title claims abstract description 66
- 238000000034 method Methods 0.000 title claims abstract description 28
- 239000002243 precursor Substances 0.000 claims abstract description 29
- LYQFWZFBNBDLEO-UHFFFAOYSA-M caesium bromide Chemical compound [Br-].[Cs+] LYQFWZFBNBDLEO-UHFFFAOYSA-M 0.000 claims abstract description 20
- 238000001914 filtration Methods 0.000 claims abstract description 11
- 239000003960 organic solvent Substances 0.000 claims abstract description 10
- 239000000243 solution Substances 0.000 claims description 64
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 claims description 42
- 239000008367 deionised water Substances 0.000 claims description 24
- 229910021641 deionized water Inorganic materials 0.000 claims description 24
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 24
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 16
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 16
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 16
- 230000002378 acidificating effect Effects 0.000 claims description 8
- 239000000654 additive Substances 0.000 claims description 8
- 230000000996 additive effect Effects 0.000 claims description 8
- 239000007788 liquid Substances 0.000 claims description 8
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 claims description 8
- 239000011259 mixed solution Substances 0.000 claims description 8
- GPRLSGONYQIRFK-MNYXATJNSA-N triton Chemical compound [3H+] GPRLSGONYQIRFK-MNYXATJNSA-N 0.000 claims description 8
- 239000006184 cosolvent Substances 0.000 claims description 6
- 239000004810 polytetrafluoroethylene Substances 0.000 claims description 6
- 229920001343 polytetrafluoroethylene Polymers 0.000 claims description 6
- 229920002545 silicone oil Polymers 0.000 claims description 6
- 235000019253 formic acid Nutrition 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 claims description 5
- 239000012528 membrane Substances 0.000 claims description 4
- 238000002360 preparation method Methods 0.000 claims description 4
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 claims description 3
- BMYNFMYTOJXKLE-UHFFFAOYSA-N 3-azaniumyl-2-hydroxypropanoate Chemical compound NCC(O)C(O)=O BMYNFMYTOJXKLE-UHFFFAOYSA-N 0.000 claims description 2
- 239000011148 porous material Substances 0.000 claims description 2
- 238000002834 transmittance Methods 0.000 abstract description 5
- 239000000084 colloidal system Substances 0.000 abstract description 3
- 239000002904 solvent Substances 0.000 abstract description 2
- 238000005303 weighing Methods 0.000 description 28
- 238000004140 cleaning Methods 0.000 description 16
- 239000003921 oil Substances 0.000 description 13
- 238000005406 washing Methods 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 4
- 238000001035 drying Methods 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000000706 filtrate Substances 0.000 description 2
- 150000004820 halides Chemical class 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000002791 soaking Methods 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 238000001291 vacuum drying Methods 0.000 description 2
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 1
- NAJCQJKJQOIHSH-UHFFFAOYSA-L [Pb](Br)Br.[Cs] Chemical compound [Pb](Br)Br.[Cs] NAJCQJKJQOIHSH-UHFFFAOYSA-L 0.000 description 1
- 230000002860 competitive effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000009206 nuclear medicine Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/12—Halides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B9/00—Single-crystal growth from melt solutions using molten solvents
- C30B9/04—Single-crystal growth from melt solutions using molten solvents by cooling of the solution
- C30B9/08—Single-crystal growth from melt solutions using molten solvents by cooling of the solution using other solvents
- C30B9/12—Salt solvents, e.g. flux growth
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
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- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention provides a perovskite single crystal and a growth method thereof. The first aspect of the present invention provides a method for growing a perovskite single crystal, comprising the steps of: reacting PbBr2And CsBr in an organic solvent, filtering to obtain a precursor solution, wherein the pH value of the organic solvent<7; and placing the precursor solution in a growth device for single crystal growth to obtain the perovskite single crystal. The invention reduces the colloid concentration in the solution and increases the free ion concentration by changing the solvent formula required by the growth of the perovskite single crystal, thereby reducing CsPbBr3The growth temperature and speed of the single crystal, and the high-quality CsPbBr with high transmittance and good crystallinity3And (3) single crystal.
Description
Technical Field
The invention relates to the technical field of novel materials, in particular to a perovskite single crystal and a growth method thereof.
Background
In recent years, as the demand for radiation detection is becoming greater and greater, not only for scientific purposes, but also for modern society welfare-related applications such as nuclear medicine imaging, environmental radioactivity monitoring, spacecraft and national security devices, etc. The semiconductor is an important material for manufacturing the nuclear radiation detector, has high spectral resolution and high sensitivity, and the material essentially has a larger energy gap (Eg) and can reduce spectral noise generated by the jump (dark current) of a thermally activated carrier within the range of 1.6-3.0 eV. While the additional material requires high resistivity and high decay coefficient, lead (Pb) halide perovskites have the advantages of high decay coefficient, energy bandwidth, large migration lifetime (μ τ), etc., which can be achieved with inexpensive raw materials in combination with low cost solution growth methods, thereby making perovskite materials more competitive with cadmium telluride. Wherein, the all-inorganic cesium lead bromide (CsPbBr)3) Perovskite is more superior to organic-inorganic perovskite due to its stable structure, and has become a hot issue in current research.
In conclusion, the halide perovskite single crystal has wide application prospect due to simple preparation and lower cost. However, the performance of the photoelectric device prepared based on the perovskite single crystal has extremely high requirement on the crystal quality, and the solution method is used for growing high-quality CsPbBr3Single crystals represent a great challenge. At present, the conventional solution method greatly influences the concentration of free ions in a solution due to the existence of a large amount of colloids in a precursor solution, so that the grown CsPbBr is generated3The single crystal quality is poor, and the internal expansibility has more defects, so that the electrical and optical properties are poor. Therefore, how to overcome the defects of the prior art and provide high-quality CsPbBr with high transparency, high transmittance and good crystallinity3Single crystals are becoming more and more important.
Disclosure of Invention
The invention provides a perovskite single crystal and a preparation method thereof, and aims to provide high-quality CsPbBr with high transmittance and good crystallinity3And (3) single crystal.
The invention provides, in a first aspect, a method of growing a perovskite single crystal, the method comprising the steps of:
reacting PbBr2And CsBr in an organic solvent, filtering to obtain a precursor solution, wherein the pH value of the organic solvent<7；
And placing the precursor solution in a growth device for single crystal growth to obtain the perovskite single crystal.
Further, the PbBr is2The molar ratio to CsBr was 2: 1.
Further, the organic solvent comprises DMSO, a cosolvent and an acidic additive, wherein the cosolvent comprises DMF and CyOH, the acidic additive comprises formic acid or hydrobromic acid, and the cosolvent is used for better allowing PbBr to react2And CsBr in DMSO.
Further, the acidic additive is formic acid.
Further, in the organic solvent, the volume ratio of DMSO, DMF, CyOH and the acidic additive is 6:2:1: 1.
further, the preparation method of the precursor solution comprises the following steps:
reacting CsBr and PbBr2Dissolving the precursor solution in DMSO, adding a cosolvent and an acidic additive into the mixed solution of the DMSO, and filtering by using a PTFE membrane to obtain the precursor solution.
Further, the pore size of the PTFE membrane is 0.45 mm.
Further, the growth device is washed and dried by sequentially using triton, deionized water, a hydrochloric acid solution, deionized water, an acetone solution, deionized water, an ethanol solution and deionized water before use.
Further, the single crystal growing includes: and (2) placing the precursor solution in a growth device, heating the precursor solution by using an oil bath heating method, controlling the initial temperature to be 40 ℃, raising the temperature at a speed of increasing 2 ℃ per hour, raising the temperature at a speed of increasing 1 ℃ per hour after the temperature is raised to 44 ℃, and raising the temperature at a speed of increasing 1 ℃ per day after the temperature is raised to 48-50 ℃ to precipitate the perovskite single crystal.
Further, the precursor solution is heated by using silicon oil, and the liquid level height of the silicon oil is more than 0.5cm higher than that of the precursor solution.
In a second aspect, the present invention provides a perovskite single crystal grown according to any one of the methods described above.
The invention provides a perovskite monocrystal and a growth method thereof, which reduce the colloid concentration in a solution and increase the free ion concentration by changing the solvent formula required by the growth of the perovskite monocrystal, thereby reducing CsPbBr3The growth temperature and speed of the single crystal, and the high-quality CsPbBr with high transmittance and good crystallinity3And (3) single crystal.
Drawings
FIG. 1 shows CsPbBr provided in example 1 of the present invention3An X-ray diffraction pattern of a single crystal;
FIG. 2 shows CsPbBr provided in example 1 and comparative example 1 of the present invention3High resolution X-ray rocking profile of single crystal;
FIG. 3 shows CsPbBr provided in example 1 and comparative example 1 of the present invention3Single crystal uv absorption visible patterns.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the embodiments of the present invention. All other embodiments, which can be obtained by a person skilled in the art without making any creative effort based on the embodiments in the present invention, belong to the protection scope of the present invention.
Example 1
The embodiment provides a growth method of perovskite single crystal, which comprises the following steps:
step 1: cleaning a weighing bottle by sequentially using triton, deionized water, hydrochloric acid solution, deionized water, acetone solution, deionized water, ethanol solution and deionized water, and specifically comprising the following steps:
cleaning the interior and the surface of a weighing bottle by using triton, washing residual triton on the surface and the interior of the weighing bottle by using deionized water, soaking the weighing bottle for 3 hours by using 10% hydrochloric acid solution, washing residual hydrochloric acid solution on the surface and the interior of the weighing bottle by using deionized water, ultrasonically cleaning the weighing bottle for 15 minutes by using 10% acetone solution, washing residual acetone solution on the surface and the interior of the weighing bottle by using deionized water, ultrasonically cleaning the weighing bottle for 15 minutes by using 10% ethanol solution, washing residual ethanol solution on the surface and the interior of the weighing bottle by using deionized water, and finally drying the weighing bottle for later use;
step 2: 0.5M CsBr and 1M PbBr were added at room temperature2Dissolving the components in 10ml of DMSO together to prepare a mixed solution of the DMSO, filtering the mixed solution, adding DMF, CyOH and HCOOH into the mixed solution in sequence after filtering, uniformly mixing to obtain a perovskite precursor solution, wherein the volume ratio of the DMSO to the DMF to the CyOH to the HCOOH is 6:2:1:1, filtering the perovskite precursor solution by using PTFE with the aperture of 0.45 mm, collecting filtrate and standing for 12 hours for later use;
and step 3: transferring the precursor solution after standing to the weighing bottle provided in the step 1 by using a liquid transferring gun, then placing the weighing bottle in an oil bath pan, adding a proper amount of silicone oil into the oil bath pan, and enabling the liquid level position of the silicone oil in the oil bath pan to be about 0.5cm higher than that of the precursor solution in the weighing bottle;
and 4, step 4: controlling the temperature of the silicon oil to be 40 ℃, raising the temperature by 2 ℃ per hour, raising the temperature by 1 ℃ per hour after the temperature of the silicon oil is raised to 44 ℃, observing that crystals begin to precipitate after the temperature is raised to 48 ℃, and raising the temperature by 1 ℃ per day until the precipitation is finished to obtain the perovskite single crystal;
and 5: the prepared CsPbBr is added3Taking out the single crystal from the weighing bottle, cleaning the single crystal by using an ether solution, cleaning the single crystal for 1 minute in a quick cleaning mode in the cleaning process, keeping the mechanical damage to the perovskite single crystal as small as possible, drying the perovskite single crystal by using a vacuum drying oven at 60 ℃ for 12 hours, and transferring the dried perovskite single crystal into a glove box for storage.
For CsPbBr3X-ray diffraction experiments were carried out on single crystals, and CsPbBr obtained in example 1 was grown as shown in FIG. 13The single crystal is pure phase, has strong diffraction peaks at 15.228 degrees, 15.086 degrees, 21.466 degrees, 21.512 degrees, 30.698 degrees and 30.381 degrees, proves that the single crystal is an orthorhombic phase structure, and meanwhile, CsPbBr3The single crystal has a preferred orientation of (101).
Comparative example 1
The present comparative example provides a conventional method for growing a perovskite single crystal, comprising the steps of: :
step 1: cleaning a weighing bottle by sequentially using triton, deionized water, hydrochloric acid solution, deionized water, acetone solution, deionized water, ethanol solution and deionized water, and specifically comprising the following steps:
cleaning the interior and the surface of a weighing bottle by using triton, washing residual triton on the surface and the interior of the weighing bottle by using deionized water, soaking the weighing bottle for 3 hours by using 10% hydrochloric acid solution, washing residual hydrochloric acid solution on the surface and the interior of the weighing bottle by using deionized water, ultrasonically cleaning the weighing bottle for 15 minutes by using 10% acetone solution, washing residual acetone solution on the surface and the interior of the weighing bottle by using deionized water, ultrasonically cleaning the weighing bottle for 15 minutes by using 10% ethanol solution, washing residual ethanol solution on the surface and the interior of the weighing bottle by using deionized water, and finally drying the weighing bottle for later use;
step 2: 0.5M CsBr and 1M PbBr were mixed at room temperature2Dissolving the components in 10ml of DMSO together to prepare a mixed solution of DMSO, filtering the mixed solution, adding a mixed solution of DMF and CyOH with the total volume of 5ml after filtering to obtain a perovskite precursor solution, wherein the volume ratio of DMF to CyOH is 2:1, filtering the perovskite precursor solution by using PTFE with the aperture of 0.45 mm, collecting filtrate and standing for 12 hours for later use;
and step 3: transferring the precursor solution after standing into the weighing bottle provided in the step 1 by using a liquid transferring gun, then placing the weighing bottle into an oil bath pan, adding a proper amount of silicone oil into the oil bath pan, and enabling the liquid level position of the silicone oil in the oil bath pan to be higher than the liquid level position of the precursor solution in the weighing bottle by about 0.5 cm;
and 4, step 4: controlling the temperature of the silicon oil to be 40 ℃, raising the temperature by 2 ℃ per hour, raising the temperature by 1 ℃ per hour after the temperature of the silicon oil is raised to 44 ℃, observing that crystals begin to precipitate after the temperature is raised to 88 +/-2 ℃, continuously and slowly heating to 95 ℃, and finishing precipitation after growing for about 12 hours to obtain the perovskite single crystal;
and 5: the prepared CsPbBr is added3Taking out the single crystal from the weighing bottle, cleaning the single crystal by using an ether solution, cleaning the single crystal for 1 minute in a quick cleaning mode in the cleaning process, keeping the mechanical damage to the perovskite single crystal as small as possible, drying the perovskite single crystal by using a vacuum drying oven at 60 ℃ for 12 hours, and transferring the dried perovskite single crystal into a glove box for storage.
By performing a high resolution X-ray experiment on the single crystals obtained in example 1 and comparative example 1, a high resolution X-ray rocking curve was obtained, as shown in FIG. 2, CsPbBr produced in example 13CsPbBr in single crystal half-height peak width ratio3The half-height peak width of the single crystal was narrow, specifically 0.013 °, indicating that CsPbBr obtained in example 1 was small3High single crystal crystallinity, good single orientation and no twin crystal.
CsPbBr obtained in example 1 and comparative example 13Ultraviolet light absorption experiments were performed on single crystals, as shown in FIG. 3, CsPbBr produced in example 13The single crystal had a strong absorption at 548nm, which is consistent with a standard absorption pattern, and CsPbBr grown in comparative example 13CsPbBr obtained by growth in example 1, in contrast to single crystal3The transmittance of the single crystal is obviously improved.
Finally, it should be noted that: the above embodiments are only used to illustrate the technical solution of the present invention, and not to limit the same; while the invention has been described in detail and with reference to the foregoing embodiments, it will be understood by those skilled in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; and the modifications or the substitutions do not make the essence of the corresponding technical solutions depart from the scope of the technical solutions of the embodiments of the present invention.
Claims (10)
1. A method of growing a perovskite single crystal, the method comprising the steps of:
reacting PbBr2And CsBr in an organic solvent, filtering to obtain a precursor solution, wherein the pH value of the organic solvent<7；
And placing the precursor solution in a growth device for single crystal growth to obtain the perovskite single crystal.
2. The method of claim 1, wherein the PbBr is2The molar ratio to CsBr was 2: 1.
3. The method of claim 1, wherein the organic solvent comprises DMSO, a co-solvent comprising DMF and CyOH, and an acidic additive comprising formic acid or hydrobromic acid.
4. The method according to claim 3, wherein the volume ratio of DMSO, DMF, CyOH and acidic additive in the organic solvent is 6:2:1: 1.
5. the method according to claim 3 or 4, wherein the preparation method of the precursor solution comprises:
reacting CsBr and PbBr2Dissolving the precursor solution in DMSO, adding a cosolvent and an acidic additive into the mixed solution of the DMSO, and filtering by using a PTFE membrane to obtain the precursor solution.
6. The method of claim 5, wherein the PTFE membrane has a pore size of 0.45 millimeters.
7. The method of claim 1, wherein the growth device is washed and dried with triton, deionized water, hydrochloric acid solution, deionized water, acetone solution, deionized water, ethanol solution, and deionized water in sequence prior to use.
8. The method of claim 1, wherein the growing of the single crystal comprises: and (2) placing the precursor solution in a growth device, heating the precursor solution by using an oil bath heating method, controlling the initial temperature to be 40 ℃, raising the temperature at a speed of increasing 2 ℃ per hour, raising the temperature at a speed of increasing 1 ℃ per hour after the temperature is raised to 44 ℃, raising the temperature at a speed of increasing 1 ℃ per day after the temperature is raised to 48-50 ℃, and separating out the perovskite single crystal.
9. The method according to claim 8, wherein the precursor solution is heated using a silicone oil, and a liquid level height of the silicone oil is 0.5cm or more higher than a liquid level height of the precursor solution.
10. A perovskite single crystal grown according to the method of any one of claims 1 to 9.
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105405973A (en) * | 2015-10-30 | 2016-03-16 | 华中科技大学 | Mesoscopic solar cell based on perovskite-kind light absorption material and preparation method thereof |
| CN108193271A (en) * | 2017-12-29 | 2018-06-22 | 华中科技大学 | Preparation Method is melted in a kind of area that moves horizontally of bromine lead caesium monocrystalline |
| US20190169498A1 (en) * | 2016-08-26 | 2019-06-06 | King Abdullah University Of Science And Technology | Compositions and methods relating to luminescent structures |
| CN113025312A (en) * | 2019-12-25 | 2021-06-25 | 致晶科技（北京）有限公司 | Preparation method of heterogeneous perovskite crystal material, preparation method and application thereof |
| CN113913934A (en) * | 2021-10-15 | 2022-01-11 | 浙江大学温州研究院 | Growth high-quality CsPbBr3Low temperature solution process for single crystals |
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105405973A (en) * | 2015-10-30 | 2016-03-16 | 华中科技大学 | Mesoscopic solar cell based on perovskite-kind light absorption material and preparation method thereof |
| US20190169498A1 (en) * | 2016-08-26 | 2019-06-06 | King Abdullah University Of Science And Technology | Compositions and methods relating to luminescent structures |
| CN108193271A (en) * | 2017-12-29 | 2018-06-22 | 华中科技大学 | Preparation Method is melted in a kind of area that moves horizontally of bromine lead caesium monocrystalline |
| CN113025312A (en) * | 2019-12-25 | 2021-06-25 | 致晶科技（北京）有限公司 | Preparation method of heterogeneous perovskite crystal material, preparation method and application thereof |
| CN113913934A (en) * | 2021-10-15 | 2022-01-11 | 浙江大学温州研究院 | Growth high-quality CsPbBr3Low temperature solution process for single crystals |
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