CN114639966A - Programmable artificial surface plasmon polariton wave regulation and control device and control method - Google Patents
Programmable artificial surface plasmon polariton wave regulation and control device and control method Download PDFInfo
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- H01—ELECTRIC ELEMENTS
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Abstract
The invention provides a programmable artificial surface plasmon polariton wave regulation and control device, which comprises: a dielectric substrate; the metal structure is arranged on the front surface of the dielectric substrate and comprises a coplanar waveguide transmission line feed part and a metal strip; the metal strip comprises an artificial surface plasmon waveguide part positioned in the middle of the dielectric substrate and a transition part arranged between the coplanar waveguide transmission line feed part and the artificial surface plasmon waveguide part; the artificial surface plasmon waveguide is characterized in that the artificial surface plasmon waveguide part comprises resonance units which are periodically and symmetrically arranged at two sides of the metal strip, and each resonance unit comprises: one end of the interdigital capacitor loading ring resonator is coupled with one side of the metal strip; and a first electrode of the variable capacitance diode is connected with the metal strip through the interdigital capacitance loading ring resonator, and a second electrode of the variable capacitance diode is connected with the back surface of the dielectric substrate through a metal through hole of the dielectric substrate.
Description
Technical Field
The invention belongs to the technical field of wireless communication, and particularly relates to a programmable artificial surface plasmon polariton wave regulation and control device and a control method.
Background
For a circuit designed by adopting traditional electronic components, due to the inherent aging loss of the traditional electronic components, the poor field constraint capability in the frequency band range of high-frequency 5G, high crosstalk, high loss and other obvious defects, the traditional component circuit is not suitable for processing the 5G signals of the high frequency band in the field of modern digital communication systems. Therefore, how to design a transmission processing device applicable to high-frequency 5G signals and realize signal processing through a convenient and fast electric regulation function is an urgent problem to be solved.
Surface Plasmon Polaritons (SPPs) are Surface electromagnetic wave modes that can propagate along interfaces of different materials. When electromagnetic waves are incident on the interface of metal and medium, free electrons and photons interact to generate collective oscillation, and surface electromagnetic waves propagating along the interface are formed. Recently, researchers have found that confined electromagnetic surface waves that simulate SPPs (known as Spoof SPPs or SSPPs) can be excited on a periodic corrugated surface. In the prior art, based on the concept of Spoof SPPs, the encodable metamaterial exists, and the resonant frequency of the metamaterial is changed by means of electric switching, so that different functions of a single device can be realized by field programming.
However, the programmable metamaterial provided by the prior art often has the problem that the stop band adjustment position range is not enough and is not suitable for processing the 5G signals of the high frequency band.
Disclosure of Invention
In order to solve the problems in the prior art, the application provides a programmable artificial surface plasmon polariton wave regulation and control device and a control method. The programmable artificial surface plasmon polariton wave regulation and control device can change the resonance frequency through an electric switching section, so that different functions of a single device can be realized through field programming. Meanwhile, the interdigital capacitor loading ring resonator is arranged on the artificial surface plasmon waveguide part, so that the application problem of the programmable metamaterial in high-frequency band 5G signal processing is solved.
In view of the above object, the present application provides a programmable artificial surface plasmon polariton wave modulation apparatus, comprising:
a dielectric substrate;
the metal structure is arranged on the front surface of the dielectric substrate and comprises coplanar waveguide transmission line feeding parts positioned at two ends of the dielectric substrate and a metal strip used for connecting the two coplanar waveguide transmission line feeding parts;
the metal strip comprises an artificial surface plasmon waveguide part positioned in the middle of the dielectric substrate and a transition part arranged between the coplanar waveguide transmission line feed part and the artificial surface plasmon waveguide part;
characterized in that the artificial surface plasmon waveguide section comprises resonance units periodically and symmetrically arranged on both sides of the metal strip, each of the resonance units comprising:
an interdigital capacitive loading ring resonator, one end of which is coupled with one side of the metal strip;
and a first electrode of the variable capacitance diode is connected with the metal strip through the interdigital capacitance loading ring resonator, and a second electrode of the variable capacitance diode is connected with the back surface of the dielectric substrate through a metal through hole of the dielectric substrate.
Furthermore, the interdigital capacitive loading ring resonator comprises an open metal ring and an interdigital structure at the opening, the opening of the interdigital capacitive loading ring resonator is coupled with one side of the metal strip, the first electrode is connected with the metal ring, and a connection point is located on the metal ring and far away from the opening.
Further, the design parameters of the resonance units which are periodically and symmetrically arranged on the two sides of the metal strip are the same;
in the interdigital capacitance loading ring resonator, the interdigital length, the interdigital quantity and the interdigital distance of the interdigital structure are set according to actual requirements.
Further, the transition portion comprises a coplanar waveguide structure with gradually changing heights periodically etched on two sides of the metal strip.
Furthermore, the etching period of the transition part is consistent with the arrangement period of the resonance units of the artificial surface plasmon waveguide part, and the length and the etching period of the transition part are set according to actual requirements.
Further, the programmable artificial surface plasmon wave control apparatus further includes:
and the control unit is used for controlling the external direct-current voltage source of each variable capacitance diode, and the load capacitance value of each variable capacitance diode is changed along with the change of the direct-current voltage source.
Furthermore, the varactor range of the load capacitance value of the varactor is 0.03pF ~2.1 pF.
Further, the stop band adjusting range of the artificial surface plasmon wave adjusting and controlling device is 2.0GHz-16.0 GHz.
The present application also provides a method for controlling the programmable artificial surface plasmon wave modulation apparatus, the method comprising:
and applying independent and controllable direct current voltage sources to each variable capacitance diode respectively, and performing coding control on each direct current voltage source so as to regulate and control the transmission characteristic of the programmable artificial surface plasmon wave regulation and control device.
Further, the same direct-current voltage source is applied to all the variable capacitance diodes, the load capacitance value of the variable capacitance diodes is adjusted within the range of 0.03pF to 2.1pF, and the transmission characteristic of the programmable artificial surface plasmon wave regulating and controlling device under any frequency within the range of 2.0GHz to 16.0GHz is the same as that of a digital logic NOT gate;
or, the artificial surface plasmon waveguide part is averagely divided into two sections along the waveguide direction, a first direct current voltage source is applied to all the variable capacitance diodes in the artificial surface plasmon waveguide part of the first section, a second direct current voltage source is applied to all the variable capacitance diodes in the artificial surface plasmon waveguide part of the second section, and the transmission characteristics of the programmable artificial surface plasmon wave regulating and controlling device under any two frequencies within the range of 2.0GHz-16.0GHz are the same as the digital logic AND gate.
Compared with the prior art, the programmable artificial surface plasmon polariton wave regulating and controlling device can change the resonance frequency through the electric switching section, thereby enabling a single device to realize different functions through field programming. Meanwhile, the interdigital capacitor loading ring resonator is arranged on the artificial surface plasmon waveguide part, so that the application problem of the programmable metamaterial in high-frequency band 5G signal processing is solved.
Drawings
FIG. 1 provides a programmable artificial surface plasmon polariton modulation apparatus for the present application;
FIG. 2 is a schematic diagram of an interdigital capacitive loaded ring resonator as provided herein;
FIG. 3 is an enlarged schematic view of an artificial surface plasmon waveguide section provided herein;
fig. 4 is an equivalent circuit diagram of a resonant cell provided in the present application;
FIG. 5 is a graph showing transmission coefficients S of four load capacitance values corresponding to the control device provided in the present application under the condition of applying a single set of bias voltage21A schematic diagram;
FIG. 6 is a graph illustrating the transmission coefficient S of the control device provided herein for a load capacitance of 2.1pF and 0.18pF, respectively, for a single set of bias voltages21A schematic diagram;
FIG. 7 is a diagram illustrating load capacitance values of the control device provided in the present application under the condition of applying two sets of bias voltages
Transmission coefficient of lower corresponding plasmon waveguide
A schematic diagram;
FIG. 8 shows the load capacitance of the control device provided in the present application under two bias voltage conditions
Schematic surface electric field distribution diagrams of corresponding plasmonic waveguides at frequencies F =8.5GHz, F =10.5GHz, and F =12.5 GHz;
FIG. 9 is a diagram illustrating load capacitance values of the control device provided in the present application under the condition of applying two sets of bias voltages
Transmission coefficient of lower corresponding plasmon waveguide
A schematic diagram;
FIG. 10 shows the load capacitance of the control device provided in the present application under two bias voltage conditions
The surface electric field distribution of the corresponding plasmonic waveguide at frequencies F =8.5GHz, F =10.5GHz, and F =12.5GHz is illustrated.
Detailed Description
In order to enable a reader to better understand the design purpose of the method, the following specific embodiments are provided so that the reader can visually understand the structure, structural composition, action principle and technical effect of the method. It should be noted that the following embodiments are not intended to limit the technical solutions of the present invention, and those skilled in the art can analyze and understand the embodiments and make a series of modifications and equivalent substitutions on the technical solutions provided by the present invention in combination with the prior knowledge, and new technical solutions obtained by the modifications and equivalent substitutions are also included by the present invention.
As shown in fig. 1 to 3, the present application provides a programmable artificial surface plasmon wave modulation apparatus. The device comprises a dielectric substrate and a metal structure 100 arranged on the front surface of the dielectric substrate.
Wherein the metal structure 100 includes coplanar waveguide transmission line feeding portions 11 at both ends of the dielectric substrate, and a metal strip 12 for connecting the two coplanar waveguide transmission line feeding portions 11.
In the embodiment of the present application, the metal strip 12 includes an artificial surface plasmon waveguide section 122 located in the middle of the dielectric substrate, and a transition section 121 disposed between the coplanar waveguide transmission line feed section 11 and the artificial surface plasmon waveguide section 122.
As shown in fig. 1, as an alternative implementation manner, the embodiment of the present application is connected to the coplanar waveguide transmission line feeding portion 11 through four arc-shaped flared ground planes 13, so as to meet the wave vector matching requirement.
The transition portion 121 of the metal strip 12 comprises a coplanar waveguide structure of gradually changing height periodically etched on both sides of said metal strip 12. As an alternative implementation, the transition portion 121 of the metal strip 12 is etched with rectangular blocks of progressively varying height along the axial direction of the metal strip 12.
The metal strip 12 and a traditional microstrip transmission line are effectively integrated, and smooth conversion of a traditional waveguide mode and an artificial surface plasmon waveguide mode is achieved through rectangular blocks located at two ends of the metal strip 12 and having gradually changing heights.
As shown in fig. 1, in the embodiment of the present application, the artificial surface plasmon waveguide section 122 includes resonance units 1221 periodically and symmetrically disposed at both sides of the metal strip 12. Each resonant unit 1221 includes an interdigital capacitance-loaded ring resonator 1221a, and a varactor diode 1221b disposed on the interdigital capacitance-loaded ring resonator 1221 a.
Specifically, in the embodiment of the present application, the artificial surface plasmon waveguide section 122 includes a plurality of interdigital capacitance loading ring resonators 1221a, the interdigital capacitance loading ring resonators 1221a are periodically and symmetrically disposed on two sides of the metal strip 12, and one end of each interdigital capacitance loading ring resonator 1221a is coupled to one side of the metal strip 12.
The number of the varactor diodes 1221b corresponds to the number of the interdigital capacitance loading ring resonators 1221 a. A varactor 1221b is provided on each interdigital capacitance-loaded ring resonator 1221 a. Specifically, a first electrode of the varactor 1221b is connected to the metal strap 12 through the interdigital capacitor loading ring resonator 1221a, and a second electrode of the varactor 1221b is connected to the back surface of the dielectric substrate through a metal via of the dielectric substrate. For ease of illustration, the varactor 1221b is not shown connected to the back side of the dielectric substrate in fig. 1.
As shown in fig. 2, a schematic diagram of an interdigital capacitive loaded ring resonator 1221a provided in the embodiments of the present application is shown. The interdigital capacitively-loaded ring resonator 1221a includes an open metal ring and an interdigital structure at the opening. In the embodiment of the present application, the design parameters of the respective resonance units 1221 are the same. Design parameters of the interdigital capacitance-loaded ring resonator 1221a are designed according to actual requirements. The design parameters of the interdigital capacitively-loaded ring resonator 1221a include one or more of the following parameter types: the length, number and spacing of the fingers of the finger structure.
As shown in fig. 3, which shows an enlarged schematic view of the artificial surface plasmon waveguide section 122 according to the embodiment of the present application. As shown in fig. 3, in the embodiment of the present application, the interdigital capacitive load ring resonator 1221a has a metal ring opening coupled to one side of the metal strip 12. The varactor diode 1221b is disposed on the metal ring away from the opening of the metal ring. Specifically, the first electrode of the varactor 1221b is connected to the metal ring, and the connection point is located on the metal ring and away from the opening of the metal ring.
In order to verify that the programmable artificial surface plasmon wave regulation and control device provided by the embodiment of the application can work in a deeper sub-wavelength range, a constitutive mode solver of the CST Microwave Studio can be used for simulation analysis on the resonance unit 1221. Periodic boundary conditions are set in the X-axis direction and open boundary conditions are set in the Y, Z-vertical direction. Since the artificial surface plasmon waveguide section 122 has periodicity, the dispersion characteristic of the surface of the metal strip 12 in different cases can be reflected by diodes of different capacitance values, thereby obtaining different cutoff frequencies.
As shown in fig. 4, an equivalent circuit diagram of a resonant unit 1221 provided in the embodiment of the present application is shown. When the resonance unit 1221 resonates, the imaginary part of the admittance is 0, and the corresponding resonance frequency is
Wherein L represents the equivalent inductance in the circuit,
representing the equivalent capacitance of the interdigital capacitively-loaded ring resonator 1221a,
representing the equivalent capacitance of the varactor diode 1221 b. From the above description, it can be known that the equivalent capacitance of the interdigital capacitance loading ring resonator 1221a is adjusted and controlled
And the equivalent capacitance of the varactor diode 1221b
The resonance frequency of the resonance unit 1221 may be influenced. Therefore, the adjusting performance of the regulating device provided by the embodiment of the application can be improved by adding a load capacitor.
As an optional implementation manner, the programmable artificial surface plasmon wave regulation and control device provided in the embodiment of the present application further includes a control unit. The control unit is used for controlling an external direct-current voltage source of each variable capacitance diode 1221b, and a load capacitance value of each variable capacitance diode 1221b is changed along with the direct-current voltage source.
Further, in the embodiment of the present application, the varactor range of the load capacitance value of the varactor 1221b is 0.03pF to 2.1 pF.
Further, the adjustment performance of the adjustment and control device provided by the embodiment of the present application can be improved by designing the surface structure parameters of the artificial surface plasmon waveguide portion 122. Specifically, the arrangement period of the resonance units 1221 in the artificial surface plasmon waveguide section 122 is designed to achieve the effect of changing the resonance frequency of the artificial surface plasmon waveguide section 122.
As an optional implementation manner, the etching period of the transition portion 121 is consistent with the arrangement period of the resonance unit 1221 of the artificial surface plasmon waveguide portion 122, and the length and the etching period of the transition portion 121 may be set according to actual requirements.
Compared with a passive device with completely fixed functions once the passive device is manufactured, the control device provided by the embodiment of the application has the advantage of not being bound by surface structure parameters through the control of the variable capacitance diode 1221b and the bias voltage. The resonant frequency of the metamaterial is changed by means of electric switching, and different functions of a single device can be successfully realized through field programming.
To sum up, the regulation and control device provided by the embodiment of the present application further improves the regulation and control performance of the regulation and control device by designing the surface structure parameters of the artificial surface plasmon waveguide portion 122 and combining with the external load capacitance mode. The regulation and control device that this application embodiment provided can work in darker subwavelength range. Specifically, the stop band adjusting range of the artificial surface plasmon wave adjusting and controlling device is 2.0GHz-16.0 GHz.
The present application also provides a control method of controlling the programmable artificial surface plasmon wave modulation apparatus, including:
and applying independent and controllable direct-current voltage sources to each variable capacitance diode 1221b respectively, and performing coding control on each direct-current voltage source so as to regulate and control the transmission characteristic of the programmable artificial surface plasmon wave regulation and control device.
For convenience of explanation, it is assumed that N varactor diodes 1221b are included in the artificial surface plasmon waveguide section 122.
As an optional implementation manner, a direct-current voltage may be applied between the metal strip 12 and the second electrode of each varactor 1221b, and the transmission characteristics of the regulation and control device provided in the embodiment of the present application may be integrally controlled by performing coded control on the N externally applied direct-current voltage sources. And flexible regulation and control of stop band position, quantity and bandwidth are realized. The reconfigurable characteristic of the stop band can be used for multi-frequency point signal time modulation to complete the multi-channel signal transmission function.
As an optional implementation mode, the same direct-current voltage source is applied to all the variable capacitance diodes 1221b, the load capacitance value of the variable capacitance diodes 1221b is adjusted within the range of 0.03pF to 2.1pF, and the transmission characteristic of the programmable artificial surface plasmon wave regulating and controlling device under any frequency within the range of 2.0GHz to 16.0GHz is the same as that of a digital logic NOT gate.
Specifically, as shown in fig. 5, it shows the transmission coefficients S of four load capacitance values corresponding to the control device provided in the embodiment of the present application under the condition of applying a single set of bias voltage21Schematic representation.
In this embodiment, applying a single set of bias voltages to the control device provided in this embodiment means that the dc voltage sources applied to all the varactors 1221b are the same. Following the change of direct current voltage source, varactor 1221 b's load capacitance is adjusted at 0.03pF ~2.1pF within range. For convenience of explanation, the magnitude of the voltage applied to the varactor diode 1221b will be expressed by the load capacitance value of the varactor diode 1221 b.
Along with the change of the load capacitance value, the transmission characteristic of the regulating and controlling device provided by the embodiment of the application is changed correspondingly.
When all the varactors 1221b are controlled to the same load capacitance by the same magnitude of dc voltage, the artificial surface plasmon waveguide section 122 can generate only one stop band, and the position of the stop band can be controlled by the external dc voltage source.
Specifically, as shown in fig. 5, the load on the varactor 1221b is
In the meantime, the stop band of the artificial surface plasmon waveguide part 122 is within a frequency band range of about 7.5GHz to 9.5 GHz. From fig. 5, the load capacitance of the varactor 1221b can also be obtained
The stop band position of the artificial surface plasmon waveguide section 122 is at 0.03pF, 0.107pF, 0.26pF, respectively.
As can be seen from FIG. 5, the signal passes through the sub6 in the 5G band, i.e., in the range of 2.0GHz to 16.0GHzAdjusting the load capacitance of varactor 1221b, the transmission coefficient of the modulation device provided herein
Can be kept above-3 dB, thereby keeping good transmission performance.
As shown in fig. 6, it shows the transmission coefficient S of the control device provided in the embodiment of the present application when the load capacitance values are 2.1pF and 0.18pF respectively under the condition of applying a single set of bias voltage21Schematic representation.
As shown in fig. 6, when the carrier signal frequency F =11.5GHz,
in that
Under a load capacitance value of-40 dB or less
The transmission coefficient is higher than-0.85 dB under the load capacitance value of (a). This illustrates that the transmission state of the SPP wave changes from "off state" to "on state" when the variable capacitance changes from 0.18pF to 2.1 pF.
For convenience of illustration, at a certain frequency, the dc voltage source applied to each resonant unit 1221 through the carrier signal time-varying diode 1221b is denoted as a baseband signal "1", and the dc voltage source applied to each resonant unit 1221 through the carrier signal blocking time-varying diode 1221b is denoted as a baseband signal "0".
For example, as shown in fig. 6, the carrier signal frequency F =11.5GHz, and the load capacitance
The voltage source of the direct current applied in time is marked as a baseband signal '1'; for example, by loading a capacitor
Time-dependent applied direct currentThe voltage source is noted as baseband signal "0".
Based on the above description, the modulation and control device provided in the embodiment of the present application may be used in binary frequency shift keying (2 FSK), and through the change of the capacitance value, the carrier signal is transmitted at one set load capacitance value and is suppressed at the other set load capacitance value under the same frequency, so that the transition of the transmission state of the carrier signal, that is, a typical not gate, may be implemented.
As shown in tables 1 and 2, the logic not gate device provided in the embodiment of the present application is shown.
TABLE 1
TABLE 2
By defining the input of code "0" and "1", the signal transmission state of specific frequency is used as the output of logic gate. Based on this property, by table 1: f =9GHz and table 2: the independent configuration of each stop band at F =14.5GHz implements the function of a digital logic not gate. Only when the load capacitor enables the digital signal input of the frequency band to be 1, the transmission state of the signal is conducted, and the wave can be completely transmitted; when the input code is '0', the signal is cut off and is in a closed state.
The graph shows that compared with the existing 5G frequency band, the frequency band has the inherent defects of wide occupied frequency band, low frequency band utilization rate and the like, the experimental result shows that the introduced stop band has narrow bandwidth, the frequency band utilization rate in the sub 65G frequency band range from 2GHz to 16GHz is high, the frequency shift of various center frequency stop bands can be realized through the change of bias voltage, and the frequency band utilization rate is further greatly improved.
As an optional implementation manner, the artificial surface plasmon waveguide portion 122 is equally divided into two sections along the waveguide direction, a first direct current voltage source is applied to all the varactor diodes 1221b in the first section of the artificial surface plasmon waveguide portion 122, a second direct current voltage source is applied to all the varactor diodes 1221b in the second section of the artificial surface plasmon waveguide portion 122, and the transmission characteristics of the programmable artificial surface plasmon wave control device under any two frequencies within the range of 2.0GHz to 16.0GHz are the same as those of the digital logic and gate.
Specifically, as shown in fig. 7 in combination with fig. 1, in the present embodiment, the artificial surface plasmon waveguide section 122 has 12 resonance units 1221 in total, two resonance units 1221 arranged symmetrically up and down are regarded as a pair, and a first direct-current voltage source is applied to the left three pairs of resonance units 1221, so that the load capacitance of the varactor diode 1221b is set to be 12
The second dc voltage source is applied to the right three pairs of resonant cells 1221 so that the load capacitance of the varactor diode 1221b becomes equal to
。
By influencing the capacitance of the load capacitor of the varactor 1221b by an applied bias voltage, if the difference between the capacitances of the two groups is
Sufficiently large, two different stopband cut-off frequency points will occur simultaneously as shown in fig. 7.
Further, as shown in FIG. 7, as the capacitance difference increases
The bandwidth of the stop band is correspondingly reduced, and the two rejection bands are gradually combined into a wider rejection band. The frequency difference between the two carrier signals can be further reduced by utilizing the phenomenon, and the efficient utilization of the sub 65G frequency band is realized.
As shown in fig. 8, it shows the regulating device provided in the embodiment of the present application
The surface electric field distribution of the corresponding plasmonic waveguide at frequencies F =8.5GHz, F =10.5GHz, and F =12.5GHz is illustrated.
As shown in fig. 9, it shows that when the regulating device provided in the embodiment of the present application applies two sets of bias voltages, the corresponding load capacitance values are respectively
While the transmission coefficient of the corresponding plasmon waveguide
Schematic illustration.
As shown in fig. 10, it shows the regulating device provided in the embodiment of the present application
And the surface electric field distribution schematic diagram of the corresponding plasma waveguide under different frequency bands. The simulation surface electric field verifies the correctness of the design, which shows that under two groups of bias voltages, the characteristic of adjustable stop band width can enable the selectable frequency of 2FSK to become more.
When fixed
The temperature of the molten steel is not changed,
when the variable capacitance changes from 0.12pF to 0.4pF, the transmission state of the SPP wave can be switched back and forth between an "on state" and an "off state" while reducing the frequency difference between the carrier signals. Based on the characteristic, the embodiment of the application provides a typical logic and gate function device under the condition of applying two groups of bias voltages, and can be applied to the modulation of a double-frequency FSK system.
Table 3 shows the corresponding output effect in the frequency range of 9-12.5 GHz when two different sets of load capacitance values are provided.
TABLE 3
Through simulation analysis of the prior transmission coefficient, a typical logic AND gate device is designed, only when the load capacitance value enables the digital signal input of a frequency band to be 1, the transmission state of the signal is conducted, and the wave can be transmitted in the frequency range of 9-12.5 GHz; the signal is cut off when the digital signal state of one of the frequency bands is "0". Compared with the traditional simple logic gate which can only be switched between the closing and the opening corresponding to '0' and '1', the artificial surface plasmon polariton structure design simultaneously realizes the transmission modulation of 2FSK information in sub 65G and the high-efficiency utilization of the frequency band, and is suitable for the multi-bit coding application and design in wireless communication.
It will be understood that modifications and variations can be made by persons skilled in the art in light of the above teachings and all such modifications and variations are intended to be included within the scope of the invention as defined in the appended claims. The drawings corresponding to the specific embodiments exist in a form assisting understanding, and a reader can conveniently understand the abstract upper concept of the technical idea related to the method by understanding the specific visualized lower concept. When the overall understanding of the method and the comparison with other technical solutions except the technical solution provided by the method are carried out, the expression of the attached drawings should not be taken as the only reference, and a series of modifications, equivalent substitutions, mixed combinations of characteristic elements, deletion and recombination of unnecessary technical characteristic elements, reasonable addition and recombination of the unnecessary technical characteristic elements common in the prior art and the like which are made according to the attached drawings or without referring to the attached drawings after the concept of the method is understood to be included in the spirit of the method.
Claims (10)
1. A programmable artificial surface plasmon polariton wave manipulation device, said device comprising:
a dielectric substrate;
the metal structure is arranged on the front surface of the dielectric substrate and comprises coplanar waveguide transmission line feeding parts positioned at two ends of the dielectric substrate and a metal strip used for connecting the two coplanar waveguide transmission line feeding parts;
the metal strip comprises an artificial surface plasmon waveguide part positioned in the middle of the dielectric substrate and a transition part arranged between the coplanar waveguide transmission line feed part and the artificial surface plasmon waveguide part;
the artificial surface plasmon waveguide comprises resonance units which are periodically and symmetrically arranged at two sides of the metal strip, and each resonance unit comprises:
an interdigital capacitive loading ring resonator, one end of which is coupled with one side of the metal strip;
and a first electrode of the variable capacitance diode is connected with the metal strip through the interdigital capacitance loading ring resonator, and a second electrode of the variable capacitance diode is connected with the back surface of the dielectric substrate through a metal through hole of the dielectric substrate.
2. A programmable artificial surface plasmon wave modulation apparatus according to claim 1,
the interdigital capacitance loading ring resonator comprises an open metal ring and an interdigital structure at the opening, the opening of the interdigital capacitance loading ring resonator is coupled with one side of the metal strip, the first electrode is connected with the metal ring, and a connection point is located on the metal ring and far away from the opening.
3. A programmable artificial surface plasmon wave modulation apparatus according to claim 2,
the design parameters of the resonant units which are periodically and symmetrically arranged on the two sides of the metal strip are the same;
in the interdigital capacitance loading ring resonator, the interdigital length, the interdigital quantity and the interdigital distance of the interdigital structure can be set according to actual requirements.
4. A programmable artificial surface plasmon modulation apparatus according to claim 1 and wherein said transition section comprises a periodically etched, gradually varying height coplanar waveguide structure on both sides of said metal strip.
5. A programmable artificial surface plasmon wave regulating and controlling device according to claim 1, wherein the etching period of the transition portion is identical to the arrangement period of the resonance units of the artificial surface plasmon waveguide portion, and the length of the transition portion and the etching period are set according to actual requirements.
6. A programmable artificial surface plasmon wave modulation apparatus according to claim 1 and further comprising:
and the control unit is used for controlling an external direct current voltage source of each variable capacitance diode, and the load capacitance value of each variable capacitance diode is changed along with the direct current voltage source.
7. A programmable artificial surface plasmon modulation apparatus according to claim 6 and wherein the varactor diode has a load capacitance in the range of 0.03pF to 2.1 pF.
8. A programmable artificial surface plasmon modulation apparatus according to claim 1 and having a stop band modulation range of 2.0GHz-16.0 GHz.
9. A method of controlling a programmable artificial surface plasmon wave modulation apparatus of any of claims 1-8, comprising:
and applying independent and controllable direct current voltage sources to each variable capacitance diode respectively, and performing coding control on each direct current voltage source so as to regulate and control the transmission characteristic of the programmable artificial surface plasmon wave regulation and control device.
10. A control method of a programmable artificial surface plasmon wave modulating apparatus according to claim 9,
the method comprises the following steps that the same direct-current voltage source is applied to all the variable capacitance diodes, the load capacitance value of each variable capacitance diode is adjusted within the range of 0.03pF to 2.1pF, and the transmission characteristic of the programmable artificial surface plasmon wave regulating and controlling device under any frequency within the range of 2.0GHz to 16.0GHz is the same as that of a digital logic NOT gate;
or, the artificial surface plasmon waveguide part is averagely divided into two sections along the waveguide direction, a first direct current voltage source is applied to all the variable capacitance diodes in the artificial surface plasmon waveguide part of the first section, a second direct current voltage source is applied to all the variable capacitance diodes in the artificial surface plasmon waveguide part of the second section, and the transmission characteristics of the programmable artificial surface plasmon wave regulating and controlling device under any two frequencies within the range of 2.0GHz-16.0GHz are the same as the digital logic AND gate.
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