CN114639585A - Confinement ring assembly, plasma processing apparatus and exhaust control method thereof - Google Patents
Confinement ring assembly, plasma processing apparatus and exhaust control method thereof Download PDFInfo
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- CN114639585A CN114639585A CN202011489568.6A CN202011489568A CN114639585A CN 114639585 A CN114639585 A CN 114639585A CN 202011489568 A CN202011489568 A CN 202011489568A CN 114639585 A CN114639585 A CN 114639585A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32816—Pressure
- H01J37/32834—Exhausting
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Abstract
The invention discloses a confinement ring assembly, a plasma processing device and an exhaust control method thereof, wherein the confinement ring assembly comprises: a confinement ring having a plurality of gas passages for discharging gas to an exhaust region below the confinement ring; the gas channel regulating parts are positioned below the confinement ring, each gas channel regulating part comprises a blocking part, and the blocking parts can move relative to the confinement ring to regulate the gap of the gas channel of the confinement ring so as to divide the whole confinement ring into a plurality of regulating areas. The invention can change the clearance of the gas channel of the confinement ring by utilizing the microscopic debugging process, can adjust the environment of the cavity in different areas, improves the problem of asymmetrical processing area and further improves the processing uniformity of the substrate.
Description
Technical Field
The present invention relates to devices in the semiconductor field, and more particularly, to a confinement ring assembly, a plasma processing apparatus, and an exhaust control method thereof.
Background
The plasma processing apparatus processes a semiconductor substrate and a plasma plate substrate by using the operating principle of a vacuum reaction chamber. The working principle of the vacuum reaction chamber is that reaction gas containing proper etchant or deposition source gas is introduced into the vacuum reaction chamber, then radio frequency energy is input into the vacuum reaction chamber to activate the reaction gas and ignite and maintain plasma, so as to respectively etch a material layer on the surface of a substrate or deposit a material layer on the surface of the substrate, and further process a semiconductor substrate and a plasma flat plate. For example, capacitive plasma reactors, in which a capacitive discharge is formed between a pair of parallel electrodes when radio frequency power is applied to one or both of the electrodes, have been widely used to process semiconductor substrates and display panels.
The plasma is diffusive, and although a large portion of the plasma may remain in the processing region between a pair of electrodes, a portion of the plasma may fill the entire chamber. For example, the plasma may leak into non-processing areas below the vacuum chamber. If the plasma reaches these areas, corrosion, deposition or erosion of these areas may ensue, which can result in contamination of the particles inside the chamber, which in turn can reduce the reusability of the plasma processing apparatus and can shorten the operating life of the chamber or chamber components. If the plasma is not confined to a certain working area, the charged particles will strike the unprotected area, which in turn leads to impurities and contamination of the surface of the semiconductor substrate.
Thus, it is also common in the art to provide a confinement ring (confinement ring) in the plasma processing apparatus to control the discharge of the used reactant gases and to electrically neutralize the charged particles in the reactant gases as they pass through the plasma confinement apparatus, thereby substantially confining the discharge within the processing region to prevent chamber contamination problems that may result during use of the plasma processing apparatus.
However, it should be understood by those skilled in the art that the present invention is based on the discovery that plasma processing regions within a plasma processing apparatus can create non-uniformity that can further result in substrate processing non-uniformity, which is well known to be a central technical problem to be solved in the art.
Disclosure of Invention
The invention aims to provide a confinement ring assembly, a plasma processing device and an exhaust control method thereof, which change the gap of a gas channel of the confinement ring by utilizing a microscopic debugging process, adjust the environment of a cavity in regions, improve the problem of asymmetric process regions and further improve the problem of process uniformity of a substrate.
In order to achieve the purpose, the invention is realized by the following technical scheme:
a confinement ring assembly for a plasma processing apparatus, the plasma processing apparatus comprising a reaction chamber, a susceptor disposed within the reaction chamber for supporting a substrate, the confinement ring assembly being circumferentially disposed between a periphery of the susceptor and a sidewall of the reaction chamber, the confinement ring assembly comprising:
a confinement ring having a plurality of gas passages for discharging gas to an exhaust region below the confinement ring;
the gas channel regulating parts are positioned below the confinement ring, each gas channel regulating part comprises a blocking part, and the blocking parts can move relative to the confinement ring to regulate the gap of the gas channel of the confinement ring so as to divide the whole confinement ring into a plurality of regulating areas.
Further, a plurality of the gas passage regulating members are arranged along the circumferential direction of the confinement ring.
Further, the blocking member is movable in a horizontal direction with respect to the confinement ring to adjust a gap of the gas passage, and/or the blocking member is movable in a vertical direction with respect to the confinement ring to adjust a gas resistance of the gas passage.
Further, the gas passage regulating member further includes:
the movable frame is vertically arranged on the circumferential outer side of the restraint ring;
the supporting frame is used for supporting the blocking piece and is connected with the movable frame;
the movable frame is connected with the driving device and drives the blocking piece to move through the supporting frame.
Furthermore, the restriction ring comprises a plurality of concentrically arranged guide rings and a plurality of connecting frames for connecting the guide rings, and the gas channel is an annular groove-shaped channel between the adjacent guide rings;
the blocking parts corresponding to one regulating area of the restriction ring are distributed in a fan shape, and comprise a plurality of arc-shaped parts corresponding to at least one part of the gas channel of the regulating area; the arc piece radially moves below the gas channel, and the range of the arc piece shielding the gas channel is adjusted to adjust the gap of the gas channel.
Furthermore, the support frame is correspondingly arranged below the connecting frame;
the movable frame is vertically arranged in the guide ring on the outermost side.
Furthermore, the connecting frames are distributed at intervals along the circumferential direction of the restraining ring and are respectively arranged along the radial direction; each adjustment region is symmetrical with respect to the connecting frame of the adjustment region.
Furthermore, the material of the gas channel regulating piece is the same as or different from that of the restraint ring.
Furthermore, the lengths of the arc-shaped pieces of the blocking piece are sequentially decreased from outside to inside.
Further, the length of the first arcuate member is equal to a second arc length from the outer band of the confinement ring in the adjustment region corresponding to the stop member.
Further, the driving device comprises one of an electric motor device, a hydraulic device or a pneumatic device.
A plasma processing apparatus, comprising:
the device comprises a reaction cavity, a substrate and a substrate support, wherein a base for supporting the substrate is arranged in the reaction cavity;
the confinement ring assembly is arranged between the periphery of the base and the side wall of the reaction chamber in a surrounding manner.
An exhaust control method of a plasma processing apparatus, characterized by comprising the steps of:
providing the plasma processing apparatus; and
when the environment of a reaction cavity in the plasma processing device needs to be adjusted, the driving device is utilized to drive the gas channel adjusting piece to move, and the gap of the gas channel is adjusted;
the gas flow distribution of the gas channel regulating piece in the corresponding lower exhaust area is regulated by regulating the gap of the gas channel.
Further, the driving device is used for driving the gas channel adjusting piece to move, and the adjusting of the gap of the gas channel comprises the following steps:
the driving device drives the gas channel adjusting piece to move downwards, so that the blocking piece is separated from the restraint ring;
the driving device drives the gas channel adjusting piece to move radially, so that the gap of the gas channel is enlarged or reduced;
the driving means drives the gas passage regulating member to move upward so that the blocking member comes into contact with the confinement ring.
Compared with the prior art, the invention has the following advantages:
the invention changes the clearance of the gas channel of the confinement ring through a microscopic debugging process, can adjust the environment of the cavity body in different areas, improves the problem of asymmetrical process area, and further improves the process uniformity problem of the substrate.
The invention can be matched with a vacuum pump interface, improves the air extraction efficiency and effectively reduces the impurity particles of the machine table.
Drawings
FIG. 1 is a schematic view of a plasma processing apparatus not employing the present invention;
FIG. 2 is a schematic diagram of a plasma processing apparatus according to an embodiment of the present invention;
FIG. 3 is a bottom view of the confinement rings of the present invention;
FIG. 4 is a schematic structural view of a confinement ring assembly for a plasma processing apparatus according to the invention;
FIGS. 5a to 5d are schematic views illustrating the structure of the gap of the tuning gas channel according to the present invention;
FIG. 6 is a flowchart of an exhaust gas control method of a plasma processing apparatus according to the present invention.
Detailed Description
For the purpose of understanding the nature, content and advantages of the present invention, as well as the advantages thereof, reference should be made to the following detailed description of the preferred embodiment, which is illustrated in the accompanying drawings, wherein the same reference numerals are used throughout the several drawings to indicate corresponding features, advantages and details of the present invention, and are not intended to limit the scope of the invention.
The mechanism of the invention is that a plurality of gas channel regulating pieces are arranged below the confinement ring, each gas channel regulating piece comprises a blocking piece, and the blocking pieces can move relative to the confinement ring to regulate the gap of the gas channel of the confinement ring so as to divide the whole confinement ring into a plurality of regulating areas. FIG. 1 shows a process region in a plasma processing apparatus prior to use of the present invention, as shown in FIG. 1, since it illustratively grounds the confinement rings directly or indirectly on the right side of the illustrated chamber, the process region A near the ground (left side of the illustrated plasma processing apparatus) is "lifted" higher and has a lower plasma concentration than the other side of the chamber (right side of the illustrated plasma processing apparatus) without the ground. Thus, the process rate of the edge portion of the substrate W to be processed on the ground side is reduced, while the process rate on the other side is relatively high, and the uniformity of the substrate W may be affected.
Referring to fig. 2, fig. 2 is a schematic structural diagram of a plasma processing apparatus employing a confinement ring assembly of the present invention. The plasma processing apparatus 1 as shown in the figure has a reaction chamber 10, the reaction chamber 10 is substantially cylindrical, and the side walls of the reaction chamber are substantially vertical, and the reaction chamber 10 has an upper electrode 11 and a lower electrode 13 disposed in parallel with each other. Generally, the region between the upper electrode 11 and the lower electrode 13 is a processing region B, which will form high frequency energy to ignite and sustain plasma. The lower electrode 13 includes a susceptor 131, and a substrate W to be processed, which may be a semiconductor substrate to be etched or processed or a glass plate to be processed into a flat panel display, is placed over the susceptor 131. Reactant gases are supplied into the chamber 10 from a gas source 12, and one or more rf power supplies 14 may be applied to the lower electrode 13 individually or to both the upper electrode 11 and the lower electrode 13 to deliver rf power to the lower electrode 13 or to both the upper electrode 11 and the lower electrode 13, thereby generating a large electric field inside the chamber 10. Most of the electric field lines are contained in the processing region a between the upper electrode 11 and the lower electrode 13, and the electric field accelerates electrons, which are present in a small amount inside the reaction chamber 11, to collide with gas molecules of the input reaction gas. These collisions result in ionization of the reaction gas and excitation of the plasma, thereby generating plasma within the reaction chamber 10. Neutral gas molecules of the reactant gas lose electrons when subjected to these strong electric fields, leaving positively charged ions behind. The positively charged ions are accelerated toward the lower electrode 13 and combine with neutral species in the substrate being processed, stimulating substrate processing, i.e., etching, deposition, etc. An exhaust region is provided at a suitable location in the plasma processing apparatus 1, and is connected to an external exhaust device (e.g., a vacuum pump 15) for pumping the used reaction gas and byproduct gas out of the processing region B during the processing.
In one application scenario, since confinement rings 16 are connected to ground 17 near the right-hand cavity of the plasma processing apparatus as shown in FIG. 1, plasma processing region A is "lifted" above the right-hand confinement rings 16, and spatially presents an asymmetric cloud, specifically, near the grounded confinement rings, the processing region is "lifted" and near the confinement rings away from ground, the processing region extends all the way to below the substrate. Therefore, the plasma concentration of the substrate area Wa at this region is low. In contrast, the plasma concentration is higher in the corresponding region Wb on the other side of the substrate W in the horizontal direction.
It should be noted that although confinement ring 16 is shown directly connected to ground terminal 17, it should be understood by those skilled in the art that confinement ring 16 may alternatively be indirectly connected to ground terminal 17, for example, by a connecting member (not shown) connected to ground terminal 17.
Fig. 3 is a bottom view of the confinement ring of the present invention, and as shown in fig. 3, the confinement ring 16 includes a plurality of deflector rings 162 concentrically arranged, and a plurality of connection brackets 163 connecting the deflector rings, and the gas passages 161 are annular groove-shaped passages between adjacent deflector rings, and virtually divide the entire confinement ring 16 into a plurality of adjustment regions 160 along the circumferential direction of the confinement ring.
Fig. 4 is a schematic view of a confinement ring assembly for a plasma processing apparatus, referring to fig. 4 in combination with fig. 2 and 3, the present invention provides a confinement ring assembly circumferentially disposed between the periphery of a susceptor 131 and the sidewall of a reaction chamber 10, the confinement ring assembly including a confinement ring 16 and a plurality of gas passage adjusters 2, wherein the confinement ring 16 has a plurality of gas passages 161 for discharging gas to an exhaust region below the confinement ring, the plurality of gas passage adjusters 2 are disposed below the confinement ring 16, specifically, the gas passage adjusters 2 may be disposed below an adjustment region 160 corresponding to the confinement ring 16, each of the gas passage adjusters 2 includes a blocking member 21, the blocking member 21 is movable relative to the confinement ring 16 to adjust a gap between the gas passages 161 of the confinement ring, to divide the entire confinement ring 16 into a number of conditioning zones 160.
It should be noted that the above-mentioned blocking member 21 can divide the whole confinement ring into a plurality of adjustment regions in equal proportion, and adjust the plasma concentration environment in the reaction chamber in different regions, for example, when the plasma concentration in the substrate region Wa is low, the blocking member of the gas channel adjusting member is controlled to move, so that the gap of the gas channel 161 of the confinement ring 16 is reduced; and/or, when the plasma concentration of the substrate area Wb is higher, the blocking member 21 of the gas passage regulating member is controlled to move so that the gap of the gas passage 161 of the confinement ring is increased.
Further, a plurality of the gas passage regulating members 2 are arranged along the circumferential direction of the confinement ring, and the blocking member 21 can move in the horizontal direction or the vertical direction with respect to the confinement ring 16 to regulate the gap of the gas passage 161.
Fig. 5a to 5d are schematic structural diagrams of the gap adjusting device for adjusting the gas channel according to the present invention, and as shown in fig. 5a, in a specific embodiment, the gas channel adjusting member 2 further includes: a movable frame 22 vertically disposed outside the confinement ring 16 in the circumferential direction; a support frame 23 for supporting the blocking member 21 and connected to the movable frame 22; the movable frame 22 is connected to a driving device (not shown) and drives the blocking member 21 to move through a supporting frame 23.
Referring to fig. 3 and 4, the confinement ring 16 includes a plurality of concentrically arranged guide rings 162 and a plurality of connecting frames 163 connecting the guide rings, and the gas passages 161 are annular groove-shaped passages between adjacent guide rings; the blocking parts 21 corresponding to one adjusting area of the restriction ring are distributed in a fan shape, and the blocking parts 21 comprise a plurality of arc-shaped parts corresponding to at least one part of the gas channel of the adjusting area; the arc moves radially under the gas channel, adjusting the range that the arc blocks the gas channel to adjust the gap of the gas channel 161, so that the gas flow passing through the whole confinement ring 16 is similar by adjusting the gap of the gas channel in each region.
The support frame 23 is correspondingly disposed below the connecting frame 163; the movable frame 22 is vertically arranged in the outermost diversion ring. The connecting frames 163 are distributed at intervals along the circumferential direction of the confinement ring 16, and are respectively arranged along the radial direction; each adjustment region is symmetrical about the connection bracket 163 of the present adjustment region.
The gas channel adjusting member 2 is made of the same material as the confinement rings 16, so as to prevent the gas channel adjusting member from being etched by the reaction by-product of the chamber, and further, the confinement rings are made of an insulating material such as quartz, alumina or conductive aluminum coated with a corrosion-resistant material as long as the potential is kept floating.
Preferably, referring to fig. 4, the lengths of the arc-shaped members of the blocking member decrease from outside to inside, and the length of the first arc-shaped member 210 is equal to the length of the second arc 1620 starting from the outer ring of the confinement ring in the adjustment region corresponding to the blocking member. With the structure, the blocking parts of the adjusting parts of the two adjacent gas channels 161 can be well prevented from being damaged by contact friction when the adjusting parts move horizontally.
The driving device comprises one of a motor device, a hydraulic device or a pneumatic device.
It should be noted that the driving device has a mature technical support in the prior art (for example, a GUI computer control or a manual control is adopted), and for brevity, the description is omitted here.
The plasma processing apparatus provided by the embodiment of the present invention has the same technical features as the confinement ring assembly provided by the above embodiment, so that the same technical problems can be solved, and the same technical effects can be achieved.
Please refer to fig. 6, which is a flowchart illustrating an exhaust control method of a plasma processing apparatus according to the present invention. As shown in the drawing, a third embodiment of the present invention provides an exhaust gas control method of a plasma processing apparatus, including the steps of:
s61, providing a plasma processing device;
s62, when the reaction cavity environment in the plasma processing device needs to be adjusted, the driving device is used for driving the gas channel adjusting piece to move, and the gap of the gas channel is adjusted;
and S63, adjusting the gas flow distribution of the gas channel adjusting piece in the corresponding lower exhaust area by adjusting the gap of the gas channel.
Further, the driving device is used for driving the gas channel adjusting piece to move, and the adjusting of the gap of the gas channel further comprises the following steps:
the driving device drives the gas channel adjusting piece to move downwards, so that the blocking piece is separated from the restraint ring (see fig. 5a and 5 b); the gas resistance adjusting function of the blocking piece on the confinement ring can be realized by adjusting the vertical distance between the blocking piece 21 and the confinement ring, and the plasma concentration distribution in different areas above the confinement ring can be adjusted by adjusting the heights of the blocking pieces at different positions to be the same or different.
The driving device drives the gas channel adjusting piece to move radially, so that the gap of the gas channel becomes larger or smaller, further, when the gap of the gas channel needs to be controlled to be larger, the driving device drives the gas channel adjusting piece to move radially away from the center of the confinement ring, and when the gap of the gas channel needs to be controlled to be smaller, the driving device drives the gas channel adjusting piece to move radially towards the center of the confinement ring (see fig. 5 c).
The driving means drives the gas channel regulator upward such that the blocking member comes into contact with the confinement ring (see fig. 5 d).
In specific application, the plasma processing device can carry out a pre-etching process on the substrate, take out the substrate after running for a period of time, and adjust the gap of the gas channel of the confinement ring of the corresponding regulation area of the substrate according to the etching condition of the substrate. And in the subsequent etching process, a corresponding etching process is carried out according to the set gas channel gap.
While the present invention has been described in detail with reference to the preferred embodiments thereof, it should be understood that the above description should not be taken as limiting the invention. Various modifications and alterations to this invention will become apparent to those skilled in the art upon reading the foregoing description. Accordingly, the scope of the invention should be determined from the following claims.
Claims (14)
1. A confinement ring assembly for a plasma processing apparatus, the plasma processing apparatus comprising a reaction chamber, a susceptor disposed within the reaction chamber for supporting a substrate, wherein the confinement ring assembly is circumferentially disposed between a periphery of the susceptor and a sidewall of the reaction chamber, the confinement ring assembly comprising:
a confinement ring having a plurality of gas passages for discharging gas to an exhaust region below the confinement ring;
the gas channel regulating parts are positioned below the confinement ring, each gas channel regulating part comprises a blocking part, and the blocking parts can move relative to the confinement ring to regulate the gap of the gas channel of the confinement ring so as to divide the whole confinement ring into a plurality of regulating areas.
2. The confinement ring assembly for a plasma processing apparatus according to claim 1, wherein a plurality of the gas passage adjustment members are arranged circumferentially of the confinement ring.
3. The confinement ring assembly of claim 1, wherein the barrier member is movable in a horizontal direction relative to the confinement ring to adjust the gap of the gas passage, and/or wherein the barrier member is movable in a vertical direction relative to the confinement ring to adjust the gas resistance of the gas passage.
4. The confinement ring assembly for a plasma processing apparatus of claim 1, wherein the gas passage adjustment member further comprises:
the movable frame is vertically arranged on the circumferential outer side of the restraint ring;
the supporting frame is used for supporting the blocking piece and is connected with the movable frame;
the movable frame is connected with the driving device and drives the blocking piece to move through the supporting frame.
5. The confinement ring assembly of claim 1 or 4, wherein the confinement ring comprises a plurality of concentrically arranged guide rings and a plurality of connecting brackets connecting the guide rings, and the gas passage is an annular groove-shaped passage between adjacent guide rings;
the blocking parts corresponding to one regulating area of the restriction ring are distributed in a fan shape, and each blocking part comprises a plurality of arc-shaped parts corresponding to at least one part of the gas channel of the regulating area; the arc-shaped part moves radially below the gas channel, and the range of the arc-shaped part for shielding the gas channel is adjusted to adjust the gap of the gas channel.
6. The confinement ring assembly of claim 5, wherein the support frame is disposed below the connection frame;
the movable frame is vertically arranged in the guide ring on the outermost side.
7. The confinement ring assembly for a plasma processing apparatus according to claim 5, wherein the connecting frames are spaced circumferentially of the confinement ring and are each radially disposed; each adjustment region is symmetrical about the connecting frame of the adjustment region.
8. The confinement ring assembly of claim 1, wherein the gas passage adjustment member is made of the same material as or different from the confinement ring.
9. The confinement ring assembly of claim 5, wherein the arcuate members of the baffle member decrease in length from outside to inside in sequence.
10. The confinement ring assembly for a plasma processing apparatus according to claim 9, wherein the first arcuate member has a length equal to a length of a second arc starting at the outer periphery of the confinement ring in the adjustment region corresponding to the blocking member.
11. The confinement ring assembly of claim 4, wherein the driving means comprises one of motor means, hydraulic means or pneumatic means.
12. A plasma processing apparatus, comprising:
the device comprises a reaction cavity, a substrate and a substrate support, wherein a base for supporting the substrate is arranged in the reaction cavity;
the confinement ring assembly of any one of claims 1-11, circumferentially disposed between the outer periphery of the susceptor and a sidewall of the reaction chamber.
13. An exhaust gas control method for a plasma processing apparatus, comprising the steps of:
providing a plasma processing apparatus as recited in claim 12; and
when the environment of a reaction cavity in the plasma processing device needs to be adjusted, the driving device is used for driving the gas channel adjusting piece to move, and the gap of the gas channel is adjusted;
the gas flow distribution of the gas channel regulating piece in the corresponding lower exhaust area is regulated by regulating the gap of the gas channel.
14. The exhaust gas control method of a plasma processing apparatus according to claim 13, wherein the driving means drives the gas passage adjusting member to move, and adjusting the gap of the gas passage comprises:
the driving device drives the gas channel regulating piece to move downwards so that the blocking piece is separated from the restraint ring;
the driving device drives the gas channel adjusting piece to move radially, so that the gap of the gas channel is enlarged or reduced;
the driving means drives the gas passage regulating member to move upward so that the blocking member comes into contact with the confinement ring.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
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| CN202011489568.6A CN114639585A (en) | 2020-12-16 | 2020-12-16 | Confinement ring assembly, plasma processing apparatus and exhaust control method thereof |
| TW110140242A TWI834075B (en) | 2020-12-16 | 2021-10-29 | Confinement ring assembly, plasma treatment device and exhaust control method thereof |
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| CN202011489568.6A CN114639585A (en) | 2020-12-16 | 2020-12-16 | Confinement ring assembly, plasma processing apparatus and exhaust control method thereof |
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| CN101150909B (en) * | 2006-09-22 | 2010-05-12 | 中微半导体设备(上海)有限公司 | Plasm restraint device |
| CN101207001B (en) * | 2006-12-22 | 2010-05-19 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Exhaust device and reaction chamber containing the same |
| US8360003B2 (en) * | 2009-07-13 | 2013-01-29 | Applied Materials, Inc. | Plasma reactor with uniform process rate distribution by improved RF ground return path |
| WO2013078098A1 (en) * | 2011-11-23 | 2013-05-30 | Lam Research Corporation | Multi zone gas injection upper electrode system |
| CN103177925B (en) * | 2011-12-23 | 2015-08-26 | 中微半导体设备(上海)有限公司 | A kind of adjustable confinement ring for plasma processing apparatus |
| CN103811263B (en) * | 2014-02-25 | 2016-06-01 | 清华大学 | Plasm restraint device and there is its plasma processing apparatus |
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