CN114629462A - Surface acoustic wave resonator and filter - Google Patents
Surface acoustic wave resonator and filter Download PDFInfo
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- CN114629462A CN114629462A CN202210294659.7A CN202210294659A CN114629462A CN 114629462 A CN114629462 A CN 114629462A CN 202210294659 A CN202210294659 A CN 202210294659A CN 114629462 A CN114629462 A CN 114629462A
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02543—Characteristics of substrate, e.g. cutting angles
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02637—Details concerning reflective or coupling arrays
- H03H9/02685—Grating lines having particular arrangements
- H03H9/02724—Comb like grating lines
- H03H9/02732—Bilateral comb like grating lines
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/64—Filters using surface acoustic waves
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Abstract
The embodiment of the invention discloses a surface acoustic wave resonator and a filter. The resonator includes a piezoelectric layer; an electrode layer on the piezoelectric layer, the electrode layer comprising a plurality of transducers; the piezoelectric layer comprises a plurality of heterogeneous reflecting grating structures, the heterogeneous reflecting grating structures extend along a second direction, each heterogeneous reflecting grating structure corresponds to one transducer, and the depth of each heterogeneous reflecting grating structure is greater than the thickness of the transducer; the heterogeneous reflection grating structure comprises a first heterogeneous reflection grating unit and a second heterogeneous reflection grating unit, the first heterogeneous reflection grating unit and the second heterogeneous reflection grating unit are respectively and symmetrically arranged at two sides of the corresponding transducer along a first direction, the first heterogeneous reflection grating unit and the second heterogeneous reflection grating unit respectively comprise a plurality of reflection gratings, the widths of the plurality of reflection gratings are equal, the lengths of the plurality of reflection gratings are equal, and the plurality of reflection gratings are distributed at equal intervals along the first direction. The invention adopts a heterogeneous reflection grating structure to replace a metal reflection grating with a conventional structure to reflect surface waves, thereby improving the Q value of the resonator.
Description
Technical Field
The embodiment of the invention relates to the technical field of semiconductor packaging, in particular to a surface acoustic wave resonator and a filter.
Background
Along with the development of communication technology, a product terminal puts strict requirements on the performance of various devices, and a filter is a key device of a communication system; with the development of the technology, the types of filters are more and more, and the technology of the filters is continuously developed from LCR filters to cavity filters and from LTCC ceramic filters to acoustic surface filters; since the LTE era, the role of surface acoustic filters in communication systems has become increasingly important. Meanwhile, with the development of communication technology, various requirements on the filter are higher and higher; especially with the advent of the fifth Generation mobile communication technology (5th-Generation, 5G), the filter industry faces significant challenges and opportunities.
The surface acoustic wave filter is widely applied to a radio frequency front end, has the advantages of low insertion loss, wide bandwidth, small size and the like, but compared with a metal cavity filter and a bulk acoustic wave resonator, the Q value of the surface acoustic wave filter is lower, and increasingly strict performance requirements cannot be realized, so that the improvement of the Q value of the surface acoustic wave resonator is very urgent.
Disclosure of Invention
The invention provides a surface acoustic wave resonator and a filter, which are used for improving the Q value of the surface acoustic wave resonator.
In a first aspect, an embodiment of the present invention provides a surface acoustic wave resonator, including:
a piezoelectric layer;
an electrode layer on the piezoelectric layer, the electrode layer comprising a plurality of transducers;
the piezoelectric layer comprises a plurality of heterogeneous reflecting grating structures, the propagation speed of the surface acoustic wave in the heterogeneous reflecting grating structures is different from that in the piezoelectric layer, the heterogeneous reflecting grating structures extend along a second direction, each heterogeneous reflecting grating structure corresponds to one transducer, and the depth of each heterogeneous reflecting grating structure is greater than the thickness of the transducer;
the heterogeneous reflection grating structure comprises a first heterogeneous reflection grating unit and a second heterogeneous reflection grating unit, the first heterogeneous reflection grating unit and the second heterogeneous reflection grating unit are respectively and symmetrically arranged on two sides of the corresponding transducer along a first direction, the first heterogeneous reflection grating unit and the second heterogeneous reflection grating unit respectively comprise a plurality of reflection gratings, the widths of the plurality of reflection gratings are equal, the lengths of the plurality of reflection gratings are equal, and the plurality of reflection gratings are distributed at equal intervals along the first direction; wherein the second direction and the first direction cross each other.
Optionally, a groove is formed in the surface, adjacent to the electrode layer, of the piezoelectric layer, a heterogeneous material layer is filled in the groove, and the heterogeneous reflective grid structure includes the heterogeneous material layer.
Optionally, the material adopted by the heterogeneous material layer comprises silicon dioxide or silicon nitride.
Optionally, a doped region is disposed on a surface of the piezoelectric layer adjacent to the electrode layer, and the heterogeneous reflective gate structure includes the piezoelectric layer doped with the set particles in the doped region.
Optionally, the set particles comprise vanadium or the set particles comprise hydrogen and helium.
Optionally, the transducer comprises: the first bus bar, the first long finger, the first dummy finger, the second bus bar, the second long finger and the second dummy finger; the first bus bar and the second bus bar extend along a first direction and are oppositely arranged; the first long finger, the second dummy finger, the second long finger and the first dummy finger all extend along a second direction and are located between a first bus bar and a second bus bar; the first long fingers and the first dummy fingers are alternately arranged along a first direction and are connected with the first bus bar; the second long fingers and the second dummy fingers are alternately arranged along a first direction and are connected with the second bus bar; the first long finger and the second artificial finger are arranged oppositely, a first gap is formed between the first long finger and the second artificial finger, the second long finger and the first artificial finger are arranged oppositely, and a second gap is formed between the second long finger and the first artificial finger.
Optionally, the distance between adjacent centers of the reflective gratings comprises 0.3 λ -3 λ, where λ is a surface acoustic wave wavelength.
Optionally, the depth of the heterogeneous reflection grating structure in the thickness direction of the surface acoustic wave resonator includes 0.3 λ -3 λ, where λ is a surface acoustic wave wavelength, and the length of the heterogeneous reflection grating is greater than the width of the transducer.
Optionally, the temperature compensation device further comprises a temperature compensation layer and a substrate, wherein the temperature compensation layer is located on one side of the electrode layer, which is far away from the piezoelectric layer, and the substrate is located on one side of the piezoelectric layer, which is far away from the electrode layer.
In a second aspect, an embodiment of the present invention further provides a filter, where the filter includes at least two surface acoustic wave resonators according to any of the embodiments of the present invention.
According to the technical scheme, the heterogeneous reflection grid structure is adopted to replace a metal reflection grid in a conventional structure to reflect the surface waves, and meanwhile, the heterogeneous reflection grid structure is located inside the piezoelectric layer, the depth of the heterogeneous reflection grid structure far exceeds the thickness of the transducer, so that the shallow layer bulk waves can be reflected, the problem that the Q value of the surface wave resonator is low is solved, and the Q value of the surface wave resonator is improved.
Drawings
Fig. 1 is a schematic plan view of a conventional surface acoustic wave resonator in the prior art;
fig. 2 is a cross-sectional view of a conventional prior art saw resonator corresponding to fig. 1 taken along section line AA;
fig. 3 is a schematic structural diagram of a surface acoustic wave resonator according to an embodiment of the present invention;
fig. 4 is a schematic partial plan view of a surface acoustic wave resonator according to an embodiment of the present invention;
fig. 5 is a cross-sectional view of a surface acoustic wave resonator corresponding to fig. 4 taken along section line BB, according to an embodiment of the present invention;
fig. 6 is a partial plan view of yet another saw resonator provided by an embodiment of the present invention;
fig. 7 is a schematic structural diagram of another saw resonator according to an embodiment of the present invention;
fig. 8 is a cross-sectional view of a saw resonator having a temperature compensation layer corresponding to fig. 4, taken along a section line BB, according to an embodiment of the present invention;
fig. 9 is a cross-sectional view of a further saw resonator having a temperature compensation layer corresponding to fig. 4, taken along a section line BB, according to an embodiment of the present invention;
fig. 10 is a cross-sectional view of a saw resonator having a substrate corresponding to fig. 4 taken along section line BB according to an embodiment of the present invention;
fig. 11 is a cross-sectional view of a further saw resonator having a substrate, corresponding to fig. 4, taken along section line BB, in accordance with an embodiment of the present invention;
fig. 12 is a cross-sectional view of still another saw resonator having a substrate, taken along section line BB, according to the embodiment of the present invention, shown in fig. 4;
fig. 13 is a cross-sectional view of a further saw resonator having a substrate, corresponding to fig. 4, taken along section line BB, in accordance with an embodiment of the present invention.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings and examples. It is to be understood that the specific embodiments described herein are merely illustrative of the invention and are not limiting of the invention. It should be further noted that, for the convenience of description, only some of the structures related to the present invention are shown in the drawings, not all of the structures.
Fig. 1 is a schematic plan view of a conventional surface acoustic wave resonator in the prior art, and fig. 2 is a cross-sectional view of the conventional surface acoustic wave resonator corresponding to fig. 1 along a sectional line AA in the prior art, and referring to fig. 1 and 2, the conventional surface acoustic wave resonator includes a piezoelectric layer 120 and an electrode layer on the piezoelectric layer 120, the electrode layer including a transducer 131 and a metal reflective grating structure 132. The thickness of the transducer 131 is 100-500nm, the material can be at least one of metals such as Au, Al, Cu, Ti, etc., and the transducer 131 is used for generating surface acoustic waves on the piezoelectric layer 120 and respectively transmitting the surface acoustic waves to the metal reflection grating structures 132. The metal reflection grating structure 132 is an essential structure of the surface acoustic wave resonator, the material and the thickness of the metal reflection grating structure 132 are the same as those of the transducer 131, the metal reflection grating structure 132 is used for reflecting surface waves, and the Q value of the surface acoustic wave resonator can be directly influenced by the quality of the metal reflection grating structure 132.
Fig. 3 is a schematic structural diagram of a surface acoustic wave resonator according to an embodiment of the present invention, fig. 4 is a schematic partial plan view of the surface acoustic wave resonator according to the embodiment of the present invention, and referring to fig. 3 and fig. 4, the embodiment of the present invention provides a surface acoustic wave resonator, which includes: a piezoelectric layer 120; an electrode layer 130 on the piezoelectric layer 120, the electrode layer 130 comprising a plurality of transducers 131; the piezoelectric layer 120 comprises a plurality of heterogeneous reflective grating structures 121, the propagation velocity of the surface acoustic waves in the heterogeneous reflective grating structures 121 is different from the propagation velocity in the piezoelectric layer 130, the heterogeneous reflective grating structures 121 extend along the second direction 2, each heterogeneous reflective grating structure 121 corresponds to one transducer 131, and the depth of each heterogeneous reflective grating structure 121 is greater than the thickness of the transducer 131; the heterogeneous reflective grating structure 121 includes a first heterogeneous reflective grating unit 1211 and a second heterogeneous reflective grating unit 1212, the first heterogeneous reflective grating unit 1211 and the second heterogeneous reflective grating unit 1212 are symmetrically disposed on both sides of the corresponding transducer 131 along the first direction 1, respectively, each of the first heterogeneous reflective grating unit 1211 and the second heterogeneous reflective grating unit 1212 includes a plurality of reflective gratings 50, the plurality of reflective gratings 50 have the same width, the plurality of reflective gratings 50 have the same length, and the plurality of reflective gratings 50 are equally spaced along the first direction 1; wherein the second direction 2 and the first direction 1 cross each other.
Specifically, the material of the piezoelectric layer 120 may be lithium niobate or lithium cobaltate, and the electrode layer 130 is formed by depositing a metal film on the surface of the piezoelectric layer 120 by means of electron beam evaporation, plasma, magnetron sputtering, or the like. Among them, the material of the deposited metal film may be titanium, chromium, copper, silver, aluminum, etc., or a combination thereof.
The sound velocity in the heterogeneous reflection grating structure 121 and the sound velocity of the piezoelectric layer 120 have abrupt changes, so that the surface acoustic waves are reflected at the interface, and therefore the structure can be used as a reflection grating of a surface acoustic resonator; meanwhile, the sound velocity of the heterogeneous reflection grating structure 121 and the sound velocity of the piezoelectric layer 120 are greatly changed, and the reflectivity is high, so that a smaller reflection grating structure can reflect more surface acoustic waves. The hetero-reflective gate structure 121 does not have metal loss; and the structure can reflect the bulk wave and reduce the loss of the bulk wave, so the structure can realize a high Q value. Meanwhile, the depth of the heterogeneous reflection gate structure 121 exceeds the thickness of the transducer 131, so that shallow bulk waves can be reflected, and the Q value of the resonator is improved.
Fig. 5 is a cross-sectional view of a surface acoustic wave resonator corresponding to fig. 4 along a section line BB according to an embodiment of the present invention, and referring to fig. 5, a first heterogeneous reflection grating unit 1211 and a second heterogeneous reflection grating 1212 are symmetrically disposed on both sides of the transducer 131, respectively, and a plurality of reflection gratings 50 are used for reflecting a surface acoustic wave generated by the transducer 131.
According to the technical scheme, the heterogeneous reflection grating structure is adopted to replace a metal reflection grating in a conventional structure to reflect the surface waves, and meanwhile, the heterogeneous reflection grating structure is located inside the piezoelectric layer, the depth of the heterogeneous reflection grating structure exceeds the thickness of the transducer, so that the shallow layer bulk waves can be reflected, the problem that the Q value of the surface wave resonator is low is solved, and the Q value of the surface wave resonator is improved.
Optionally, a groove is formed in the surface, adjacent to the electrode layer, of the piezoelectric layer, the groove is filled with a heterogeneous material layer, and the heterogeneous reflective gate structure includes the heterogeneous material layer.
Specifically, corresponding grooves can be etched in the positions of the corresponding heterogeneous reflecting grating structures on the piezoelectric layer, the heterogeneous material layers are made of different materials from the piezoelectric layer, therefore, the sound velocities of the heterogeneous material layers and the piezoelectric layer are different, and sound velocity sudden changes exist between the heterogeneous material layers and the piezoelectric layer in the transverse direction of the resonator, so that the surface acoustic waves are limited in the resonator.
Optionally, the heterogeneous material layer is made of a material including silicon dioxide or silicon nitride.
Specifically, silicon dioxide or silicon nitride is formed in the groove through plasma vapor deposition and other processes after etching, flatness restoration is performed through etching or chemical mechanical polishing, then deposition etching and other processes of the transducer are performed, and the subsequent processes are the same as those of a conventional surface acoustic wave resonator.
Optionally, a doped region is disposed on a surface of the piezoelectric layer adjacent to the electrode layer, and the heterogeneous reflective gate structure includes the piezoelectric layer doped with the doped region after the set particles are doped.
Specifically, set ion doping needs to be performed on the corresponding position of the piezoelectric layer according to the position and the structure of the resonator, and the set ions are injected into the doped region of the piezoelectric layer, which is adjacent to the surface of the electrode layer, at a high speed by adopting an ion injection process.
Optionally, the set particles comprise vanadium or the set particles comprise hydrogen and helium.
Specifically, the doped vanadium particles can form a sound velocity abrupt structure, and the doped hydrogen particles and helium particles can form a defect structure. The material of the heterogeneous reflective grating is different from that of the piezoelectric layer, so that the sound velocity of the heterogeneous reflective grating changes suddenly, and the acoustic wave is reflected. The heterogeneous reflecting grating structure does not adopt metal materials as the reflecting grating, so that no metal loss exists.
Fig. 6 is a schematic partial plan view of yet another saw resonator provided by an embodiment of the invention, and referring to fig. 6, optionally, the transducer 131 includes: a first bus bar 10, a first long finger 11, a first dummy finger 12, a second bus bar 20, a second long finger 21, and a second dummy finger 22; the first bus bar 10 and the second bus bar 20 both extend in the first direction 1 and are oppositely arranged; the first long finger 11, the second dummy finger 22, the second long finger 21 and the first dummy finger 12 all extend in the second direction 2 and are located between the first bus bar 10 and the second bus bar 20; the first long fingers 11 and the first dummy fingers 12 are alternately arranged along the first direction 1 and are connected with the first bus bar 10; the second long fingers 21 and the second dummy fingers 22 are alternately arranged along the first direction 1 and are connected to the second bus bar 20; the first long finger 11 and the second artificial finger 22 are arranged oppositely, a first gap 1122 is formed between the first long finger 11 and the second artificial finger 22, the second long finger 21 and the first artificial finger 12 are arranged oppositely, and a second gap 2112 is formed between the second long finger 21 and the first artificial finger 12.
The number of the first long finger 11, the second artificial finger 22, the second long finger 21 and the first artificial finger 12 is equal. The first bus bar 10 and the second bus bar 20 are always parallel to the first direction 1, and the angle at which the second direction 2 intersects with the first direction 1 may be set as needed, and the embodiment of the present invention exemplarily shows the case where the angle is 90 °.
With continued reference to FIG. 5, optionally, the spacing between adjacent reflective grating centers comprises 0.3 λ -3 λ, where λ is the surface acoustic wave wavelength.
Specifically, the reflection grating 50 has a periodicity, the period and duty cycle of the reflection grating 50 are related to the material of the reflection grating 50 and the material of the piezoelectric layer 120, and related to the wave velocity of the surface wave, and the period of the reflection grating 50 refers to the distance d between the centers of adjacent reflection gratings 50, and when the distance d between the centers of adjacent reflection gratings 50 is 0.3 λ -3 λ, the structure can sufficiently reflect the surface acoustic wave and maintain the phase required for acoustic resonance.
Optionally, the depth of the hetero-reflective grating structure in the thickness direction of the surface acoustic wave resonator includes 0.3 λ -3 λ, where λ is a surface acoustic wave wavelength, and the length of the hetero-reflective grating is greater than the width of the transducer.
Specifically, the depth of the heterogeneous reflective grating structure is closely related to the performance of the resonator, and too deep depth increases the process difficulty and the peak height of the stray body on the resonance curve. Considering from the material of the piezoelectric layer, the heterogeneous grid material and the performance requirements of the resonator, when the depth of the heterogeneous reflection grid structure along the thickness direction of the surface acoustic wave resonator is 0.3 lambda-3 lambda, the process difficulty can be reduced, the wave crest of the heterogeneous dispersion on the resonance curve cannot be raised, and the performance is better.
Fig. 7 is a schematic structural diagram of another surface acoustic wave resonator according to an embodiment of the present invention, and referring to fig. 7, optionally, the surface acoustic wave resonator further includes a temperature compensation layer 140 and a substrate 110, where the temperature compensation layer 140 is located on a side of the electrode layer 130 away from the piezoelectric layer 120, and the substrate 110 is located on a side of the piezoelectric layer 120 away from the electrode layer 130.
Specifically, the substrate 110 may be made of silicon, or the substrate 110 may be a composite multilayer substrate, which enables the surface acoustic wave resonator to achieve characteristics such as low insertion loss, smooth passband, high Q value, and excellent low frequency temperature. The material of the temperature compensation layer 140 may be silicon dioxide or silicon nitride, and the temperature compensation layer 140 can prevent the temperature change from affecting the resonant frequency of the saw resonator.
Fig. 8 is a cross-sectional view along a section line BB of a surface acoustic wave resonator having a temperature compensation layer according to an embodiment of the present invention, which corresponds to fig. 4, fig. 9 is a cross-sectional view along a section line BB of another surface acoustic wave resonator having a temperature compensation layer according to an embodiment of the present invention, which corresponds to fig. 4, with reference to fig. 8 and 9,
the material of the reflection grating 50 in fig. 8 is the same as that of the temperature compensation layer 140, and is silicon dioxide or silicon nitride, and the material of the reflection grating 50 in fig. 9 is doped set particles, so that the temperature compensation layer 140 and the piezoelectric layer 120 have opposite temperature offsets, and thus the whole saw resonator has a smaller temperature offset coefficient.
Fig. 10 is a cross-sectional view of a surface acoustic wave resonator with a substrate corresponding to fig. 4 along a section line BB according to an embodiment of the present invention, fig. 11 is a cross-sectional view of another surface acoustic wave resonator with a substrate corresponding to fig. 4 along the section line BB according to an embodiment of the present invention, referring to fig. 10 and 11, the material of the reflection grating 50 in fig. 10 and 11 is silicon dioxide or silicon nitride, and fig. 10 and 11 respectively show the reflection grating 50 with different depths, because the difference between the sound velocities of the substrate 110 and the piezoelectric layer 120 is large, the bulk wave is reflected at the interface, and the loss of the bulk wave can be reduced, thereby increasing the Q value of the resonator; compared with the resonator adopting the metal reflecting grating, as the depth of the reflecting grating 50 can be adjusted, more bulk waves are reflected by the resonator and do not cross-talk to the adjacent resonator structure, thereby further improving the Q value of the resonator.
Fig. 12 is a cross-sectional view of another surface acoustic wave resonator with a substrate corresponding to fig. 4 along a section line BB according to an embodiment of the present invention, fig. 13 is a cross-sectional view of another surface acoustic wave resonator with a substrate corresponding to fig. 4 along the section line BB according to an embodiment of the present invention, referring to fig. 12 and 13, the material of the reflection grating 50 in fig. 12 and 13 is a doped set particle, and fig. 12 and 13 respectively show the case of reflection gratings 50 with different depths, which can adjust the depth of the reflection grating 50 to reflect bulk waves, reduce the loss of bulk waves, and can realize a high Q value.
An embodiment of the present invention also provides a filter including at least two surface acoustic wave resonators according to any one of the above embodiments.
The filter may be formed by connecting two or more surface acoustic wave resonators in series and/or in parallel in the above embodiments.
It is to be noted that the foregoing description is only exemplary of the invention and that the principles of the technology may be employed. It will be understood by those skilled in the art that the present invention is not limited to the particular embodiments described herein, but is capable of various obvious changes, rearrangements and substitutions as will now become apparent to those skilled in the art without departing from the scope of the invention. Therefore, although the present invention has been described in some detail by the above embodiments, the invention is not limited to the above embodiments, and may include other equivalent embodiments without departing from the spirit of the invention, and the scope of the invention is determined by the scope of the appended claims.
Claims (10)
1. A surface acoustic wave resonator, comprising:
a piezoelectric layer;
an electrode layer on the piezoelectric layer, the electrode layer comprising a plurality of transducers;
the piezoelectric layer comprises a plurality of heterogeneous reflecting grating structures, the propagation speed of the surface acoustic wave in the heterogeneous reflecting grating structures is different from that in the piezoelectric layer, the heterogeneous reflecting grating structures extend along a second direction, each heterogeneous reflecting grating structure corresponds to one transducer, and the depth of each heterogeneous reflecting grating structure is greater than the thickness of the transducer;
the heterogeneous reflection grating structure comprises a first heterogeneous reflection grating unit and a second heterogeneous reflection grating unit, the first heterogeneous reflection grating unit and the second heterogeneous reflection grating unit are respectively and symmetrically arranged on two sides of the corresponding transducer along a first direction, the first heterogeneous reflection grating unit and the second heterogeneous reflection grating unit respectively comprise a plurality of reflection gratings, the widths of the plurality of reflection gratings are equal, the lengths of the plurality of reflection gratings are equal, and the plurality of reflection gratings are distributed at equal intervals along the first direction; wherein the second direction and the first direction cross each other.
2. A surface acoustic wave resonator according to claim 1, wherein a surface of the piezoelectric layer adjacent to the electrode layer is provided with a groove filled with a hetero material layer, and the hetero reflection grating structure includes the hetero material layer.
3. A surface acoustic wave resonator according to claim 2, wherein said hetero material layer is made of a material including silicon dioxide or silicon nitride.
4. A surface acoustic wave resonator according to claim 1, characterized in that the surface of the piezoelectric layer adjacent to the electrode layer is provided with a doped region, and the hetero-reflective grating structure comprises the piezoelectric layer doped with the doped region with set particles.
5. The surface acoustic wave resonator according to claim 4, wherein the setting particles include vanadium or the setting particles include hydrogen and helium.
6. A surface acoustic wave resonator according to claim 1, wherein said transducer comprises: the first bus bar, the first long finger, the first dummy finger, the second bus bar, the second long finger and the second dummy finger; the first bus bar and the second bus bar extend along a first direction and are oppositely arranged; the first long finger, the second dummy finger, the second long finger and the first dummy finger all extend along a second direction and are located between a first bus bar and a second bus bar; the first long fingers and the first dummy fingers are alternately arranged along a first direction and are connected with the first bus bar; the second long fingers and the second dummy fingers are alternately arranged along a first direction and are connected with the second bus bar; the first long finger and the second artificial finger are arranged oppositely, a first gap is formed between the first long finger and the second artificial finger, the second long finger and the first artificial finger are arranged oppositely, and a second gap is formed between the second long finger and the first artificial finger.
7. A surface acoustic wave resonator according to claim 1, wherein a pitch of adjacent centers of said reflection grating includes 0.3 λ -3 λ, where λ is a surface acoustic wave wavelength.
8. The surface acoustic wave resonator according to claim 1, wherein a depth of the hetero-reflective grating structure in a thickness direction of the surface acoustic wave resonator includes 0.3 λ -3 λ, where λ is a surface acoustic wave wavelength, and a length of the hetero-reflective grating is larger than a width of the transducer.
9. The surface acoustic wave resonator according to claim 1, further comprising a temperature compensation layer on a side of said electrode layer remote from said piezoelectric layer, and a substrate on a side of said piezoelectric layer remote from said electrode layer.
10. A filter, characterized by comprising at least two surface acoustic wave resonators as claimed in any one of claims 1 to 9.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2024098786A1 (en) * | 2022-11-09 | 2024-05-16 | 华为技术有限公司 | Surface acoustic wave resonator, filter, and electronic device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2024098786A1 (en) * | 2022-11-09 | 2024-05-16 | 华为技术有限公司 | Surface acoustic wave resonator, filter, and electronic device |
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