CN114628254A - Silicon nitride deposition method and method for manufacturing semiconductor device - Google Patents

Silicon nitride deposition method and method for manufacturing semiconductor device Download PDF

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Publication number
CN114628254A
CN114628254A CN202011439749.8A CN202011439749A CN114628254A CN 114628254 A CN114628254 A CN 114628254A CN 202011439749 A CN202011439749 A CN 202011439749A CN 114628254 A CN114628254 A CN 114628254A
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China
Prior art keywords
temperature
reaction chamber
deposition
silicon nitride
deposition temperature
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CN202011439749.8A
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Chinese (zh)
Inventor
李殷廷
金东盱
白国斌
高建峰
杨涛
李俊峰
王文武
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Institute of Microelectronics of CAS
Zhenxin Beijing Semiconductor Co Ltd
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Institute of Microelectronics of CAS
Zhenxin Beijing Semiconductor Co Ltd
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Priority to CN202011439749.8A priority Critical patent/CN114628254A/en
Publication of CN114628254A publication Critical patent/CN114628254A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Formation Of Insulating Films (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

The application relates to the field of semiconductor manufacturing, in particular to a silicon nitride deposition method and a manufacturing method of a semiconductor device, and provides a reaction chamber, wherein a wafer to be processed is placed in the reaction chamber; heating the reaction chamber to an initial deposition temperature, and then introducing reaction gas for deposition; controlling the cooling rate to cool the reaction chamber, so that the reaction chamber is cooled from the initial deposition temperature to a normal deposition temperature and is kept at the normal deposition temperature; wherein the normal deposition temperature is less than the initial deposition temperature. Reaction gas is also introduced in the temperature rising process and the temperature reducing process to carry out diffusion deposition of the film, so that good temperature difference complementation is formed in the whole diffusion deposition, and the finally prepared film is uniform in thickness.

Description

Silicon nitride deposition method and method for manufacturing semiconductor device
Technical Field
The present disclosure relates to the field of semiconductor manufacturing, and more particularly, to a method for depositing silicon nitride and a method for manufacturing a semiconductor device.
Background
Low Pressure Chemical Vapor Deposition (LPCVD) is the most important doping process in semiconductor chip fabrication, and diffuses atoms such as phosphorus and boron into a wafer under high temperature conditions, so as to change and control the type, concentration and distribution of impurities in a semiconductor, thereby establishing different electrical characteristic regions. Fig. 1 illustrates general LPCVD. That is, in the conventional LPCVD, the LPCVD is actually started only after the wafer 11 ' is heated to the reaction temperature, the reaction gas is only introduced during the deposition stage, and the reaction gas is not introduced into the reaction chamber during the heating process of the wafer 11 ' and the cooling process after the completion of the LPCVD, so that the deposition easily causes the deposited film 12 ' to have the uneven thickness as shown in fig. 2.
Disclosure of Invention
The present application addresses, at least to some extent, the above-mentioned technical problems in the related art. To solve at least one of the above problems, the present application provides a silicon nitride deposition method and a method for manufacturing a semiconductor device.
In order to achieve the above object, a first aspect of the present application provides a silicon nitride deposition method, comprising the steps of:
providing a reaction chamber, wherein a wafer to be processed is placed in the reaction chamber;
heating the reaction chamber to an initial deposition temperature, and then introducing reaction gas for deposition;
controlling the cooling rate to cool the reaction chamber, so that the reaction chamber is cooled from the initial deposition temperature to a normal deposition temperature and is kept at the normal deposition temperature; wherein the normal deposition temperature is less than the initial deposition temperature.
A second aspect of the present application provides a method of manufacturing a semiconductor device comprising a silicon nitride deposition method as described above.
Drawings
Various other advantages and benefits will become apparent to those of ordinary skill in the art upon reading the following detailed description of the preferred embodiments. The drawings are only for purposes of illustrating the preferred embodiments and are not to be construed as limiting the application. Also, like reference numerals are used to refer to like parts throughout the drawings. In the drawings:
FIG. 1 shows a schematic diagram of a prior art silicon nitride deposition process;
FIG. 2 is a schematic diagram illustrating a structure of a silicon nitride film deposited according to the prior art;
FIG. 3 shows a schematic diagram of a silicon nitride deposition process of an embodiment of the present application;
FIG. 4 is a schematic diagram illustrating a structure of a silicon nitride film deposited according to an embodiment of the present disclosure.
Detailed Description
Hereinafter, embodiments of the present disclosure will be described with reference to the accompanying drawings. It should be understood that the description is illustrative only and is not intended to limit the scope of the present disclosure. Moreover, in the following description, descriptions of well-known structures and techniques are omitted so as to not unnecessarily obscure the concepts of the present disclosure.
Various structural schematics according to embodiments of the present disclosure are shown in the figures. The figures are not drawn to scale, wherein certain details are exaggerated and possibly omitted for clarity of presentation. The shapes of various regions, layers, and relative sizes and positional relationships therebetween shown in the drawings are merely exemplary, and deviations may occur in practice due to manufacturing tolerances or technical limitations, and a person skilled in the art may additionally design regions/layers having different shapes, sizes, relative positions, as actually required.
In the context of the present disclosure, when a layer/element is referred to as being "on" another layer/element, it can be directly on the other layer/element or intervening layers/elements may be present. In addition, if a layer/element is "on" another layer/element in one orientation, then that layer/element may be "under" the other layer/element when the orientation is reversed.
Silicon nitride (Si)3N4) Thin films are a dielectric material that has a wide range of applications. As an amorphous insulating substance, the dielectric property of the silicon nitride film is superior to that of a silicon dioxide film, and the silicon nitride film has the advantages of strong blocking capability to movable ions, compact structure, small pinhole density, good chemical stability, high dielectric constant and the like, and is commonly used for processes of dielectric insulation, impurity masking, shallow trench isolation, masking, outer layer passivation protection and the like in integrated circuit manufacturing.
As an important dielectric material with excellent performance, in the field of integrated circuit manufacturing, a silicon nitride film is widely used, and the silicon nitride film can be formed by the following reactions within the temperature range of 700-: 3SiH2Cl2+4NH3---->Si3N4+6HCl+6H2However, in the conventional process, during the deposition of the silicon nitride film, the temperature in the reaction chamber is always kept constant during the process of introducing the reaction gas into the reaction chamber, so that the deposited silicon nitride film has a non-uniform thickness as shown in fig. 2. In order to solve this problem, the present embodiment proposes a solution, which is specifically as follows:
referring to fig. 3 to 4, the present invention provides a nitride diffusion deposition method, which includes the following steps:
1) providing a reaction chamber, wherein a plurality of wafers to be processed are placed in the reaction chamber;
2) heating the reaction chamber at a first heating rate to raise the temperature of the reaction chamber from an initial temperature to a first temperature (namely an initial deposition temperature), carrying out heat preservation treatment, namely maintaining the first temperature constant for a period of time, and introducing reaction gas after the temperature is raised to the first temperature;
3) the reaction chamber is cooled at a first cooling rate, so that the reaction chamber is cooled from the first temperature to a second temperature (namely, normal deposition temperature), and meanwhile, the reaction gas is continuously introduced in the cooling process, so that the silicon nitride film 12 is formed, wherein the second temperature is greater than the initial temperature and less than the first temperature, and the second temperature is the growth temperature of the film.
It is worth mentioning that after the temperature is raised to the first temperature, the reaction chamber can be directly cooled at the first cooling rate, and in addition, the first cooling rate can be controlled to cool the reaction chamber in stages.
The invention fully utilizes the phenomenon that the temperature of the surface of the wafer is inconsistent in the heating process and the cooling process of the diffusion deposition process, and introduces reaction gas to carry out diffusion deposition of the film in the heating process and the cooling process, thereby forming good temperature difference complementation in the whole diffusion deposition, leading the finally prepared film to have uniform thickness, no holes and good bonding with the surface of the wafer. The method can be realized only by adjusting the process parameters without modifying equipment, and is simple to operate. The semiconductor thin film structure prepared by the nitride diffusion deposition method has uniform thickness, is beneficial to the implementation of subsequent processes, is beneficial to improving the production yield, can finish the film diffusion deposition of dozens or even hundreds of wafers at a time, and greatly improves the yield.
As an example, in the present embodiment, hundreds or even hundreds of wafers 11 to be processed are placed on a wafer boat, and then the wafer boat loaded with the wafers 11 is placed in the reaction chamber, considering that the heating condition of the lowermost part and/or the uppermost part of the reaction chamber may not be ideal, so that several dummy wafers (dummy wafers) may be placed at the lowermost part and/or the uppermost part of the wafer boat.
Then, after the wafer 11 is placed in the reaction chamber, the temperature of the reaction chamber is raised at a first temperature raising rate, so that the temperature of the reaction chamber is raised from an initial temperature to a first temperature, and reaction gas is introduced after the temperature is raised to the first temperature. The heating method in this embodiment is the same as that in the prior art, that is, the wafer 11 is heated by the heating coil located at the periphery of the reaction chamber. Since the temperature rise process is started from an initial temperature, such as room temperature, the temperature in the reaction chamber is unstable, and if the reaction gas is introduced, the impurities of the generated film are too much, the quality of the generated film is too poor, and therefore the reaction gas is not introduced before the temperature rise process reaches the first temperature. The edge of the wafer 11 is heated first, heat energy is radiated to the center of the wafer 11 gradually, the temperature of the surface of the wafer 11 is gradually reduced from the edge of the wafer 11 to the center of the wafer 11 in the temperature rising process or even in a period of time after reaching the preset first temperature, and the thickness of a film layer deposited in the process is gradually increased from the center of the wafer 11 to the edge of the wafer 11 because the deposition rate of the film is in direct proportion to the temperature of the surface of the wafer 11 under certain other conditions.
As an example, the reaction gas in the present embodiment is SiH2Cl2And NH3The initial temperature is typically room temperature, and the semiconductor manufacturing plant is typically operated in a clean room environment, and thus the initial temperature is typically between 22 ℃ and 28 ℃ (inclusive). The first temperature, i.e. the conventional deposition temperature, may be set differently according to the process, and in this embodiment, the first temperature is between 800 ℃ and 900 ℃.
After the temperature is raised to the first temperature, the reaction chamber is cooled at a first cooling rate, so that the reaction chamber is cooled from the first temperature to a second temperature, and meanwhile, the reaction gas is continuously introduced in the cooling process, wherein the second temperature is the growth temperature of the film, and the second temperature is higher than the initial temperature and lower than the first temperature. It should be noted that the process time may be from tens of minutes to several hours according to different processes, for example, according to different thicknesses of the to-be-deposited films or different film materials, and this embodiment is not limited in particular.
As an example, the temperature reduction process is implemented by a temperature reduction device located at the periphery of the reaction chamber, so that the temperature reduction process starts from the edge of the wafer 11 first, and the temperature reduction is gradually reduced from the edge to the center of the wafer 11, so that in the temperature reduction process, the temperature of the surface of the wafer 11 is gradually increased from the edge to the center, the temperature of the surface of the wafer 11 is gradually reduced from the center to the edge, the thicknesses of the film layers in the radial directions form good complementation, and the film layers are well bonded, a fault phenomenon does not occur at the joint, the thickness uniformity of the deposited film can be greatly improved, the generation of holes can be effectively avoided, and the improvement of the film quality and the improvement of the production yield are facilitated.
And then, cooling the reaction chamber at a second cooling rate to enable the reaction chamber to be cooled from the second temperature to the initial temperature.
A schematic diagram of a complete deposition process of this embodiment is shown in fig. 3, that is, the entire process includes a temperature-increasing stage and a temperature-decreasing stage, in which only temperature adjustment is performed, and other parameters such as gas flow rate are not adjusted, and it is necessary to emphasize again that the supply of the reaction gas is stopped after the temperature-decreasing of the reaction chamber is performed at the second temperature-decreasing rate, that is, diffusion deposition of a thin film is not performed in the subsequent temperature-decreasing process, so as to avoid that too many impurities and poor quality of the generated thin film are caused due to too low temperature. The process arrangement in the embodiment is beneficial to smoothing of the temperature rise process and the temperature reduction process and simplification of the process operation, avoids the damage of equipment and formed films caused by excessively rapid temperature rise and reduction operations, and simultaneously avoids particle pollution of the wafers 11 caused by unstable films deposited on the inner wall of the reaction cavity and on the wafer boat falling onto the wafers 11 in the rapid temperature rise and reduction processes.
The nitride diffusion deposition method is particularly suitable for forming the thin film with thinner film thickness and higher requirement on thickness uniformity. If necessary, the heating and cooling operations can be continued, for example, the steps 2) and 3) are repeated one or more times, so that the deposited film layers in each stage form good complementation, and the finally formed film is ensured to have good quality and thickness uniformity.
It should be noted that the second temperature is higher than the initial temperature and lower than the first temperature, and the second temperature is the growth temperature of the thin film. The growth temperature of the film is different according to the material of the film to be generated, so the parameters can be selected differently. In this embodiment, as an example, the first temperature is between 800 ℃ and 900 ℃, the second temperature is between 700 ℃ and 800 ℃, a temperature difference between the first temperature and the second temperature is not greater than 100 ℃, of course, other settings may be provided for each temperature interval as needed, and this embodiment is not limited strictly.
As an example, the first temperature rise rate is between 8 ℃/min and 12 ℃/min, and such parameter setting is beneficial to simplify the process operation and minimize the damage to the equipment.
Illustratively, the first cooling rate is less than the second cooling rate, and illustratively, the first cooling rate is between 0.1 ℃/minute and 10 ℃/minute, and the second cooling rate is set between 8 ℃/minute and 12 ℃/minute. The cooling rate can be adjusted to be consistent, so that the simplification of the process operation is facilitated, and the damage to the cooling device, which may be caused by frequently adjusting the cooling rate, is avoided. Of course, each temperature interval may have other settings as needed, and the embodiment is not limited.
As an example, the second temperature is higher than the initial temperature, i.e. the first temperature does not need to be reduced to the initial temperature, so as to avoid the equipment from being damaged by too rapid temperature reduction, and avoid the particle pollution caused by cracking of reaction byproducts caused by too great temperature difference.
As an example, in the process of cooling the reaction chamber at the second cooling rate, the supply of the reaction gas is stopped, and the temperature of the reaction chamber is continuously cooled from the second temperature to the initial temperature at the second cooling rate, so as to perform an annealing step on the deposited film, so as to repair lattice defects in the film, reduce impurities in the film, and improve the quality of the film.
Compared with the prior art, the method fully utilizes the phenomenon that the temperature of the surface of the wafer is inconsistent in the heating process and the cooling process of the diffusion deposition process, and introduces the reaction gas to perform diffusion deposition of the film in the heating process and the cooling process, so that a good temperature difference complementation is formed in the whole diffusion deposition, the finally prepared film has uniform thickness, no holes and good bonding with the surface of the wafer. The method can be realized only by adjusting the process parameters without modifying equipment, and is simple to operate. The semiconductor thin film structure prepared by the batch type diffusion deposition method has uniform thickness, is beneficial to the implementation of subsequent processes, is beneficial to improving the production yield, can finish the film diffusion deposition of dozens or even hundreds of wafers at a time, and greatly improves the equipment output rate. Therefore, the invention effectively overcomes various defects in the prior art and has high industrial utilization value.
In the above description, the technical details of patterning, etching, and the like of each layer are not described in detail. It will be appreciated by those skilled in the art that layers, regions, etc. of the desired shape may be formed by various technical means. In addition, in order to form the same structure, those skilled in the art can also design a method which is not exactly the same as the method described above. In addition, although the embodiments are described separately above, this does not mean that the measures in the embodiments cannot be used in advantageous combination.
The embodiments of the present disclosure have been described above. However, these examples are for illustrative purposes only and are not intended to limit the scope of the present disclosure. The scope of the disclosure is defined by the appended claims and equivalents thereof. Various alternatives and modifications can be devised by those skilled in the art without departing from the scope of the present disclosure, and such alternatives and modifications are intended to be within the scope of the present disclosure.

Claims (9)

1. A silicon nitride deposition method, comprising:
providing a reaction chamber, wherein a wafer to be processed is placed in the reaction chamber;
heating the reaction chamber to an initial deposition temperature, and then introducing reaction gas for deposition;
controlling the cooling rate to cool the reaction chamber, so that the reaction chamber is cooled from the initial deposition temperature to a normal deposition temperature and is kept at the normal deposition temperature; wherein the normal deposition temperature is less than the initial deposition temperature.
2. The method of claim 1, wherein the reaction chamber is heated to the initial deposition temperature and then subjected to a soak process.
3. The silicon nitride deposition method of claim 1, wherein the reaction chamber is cooled by directly controlling a cooling rate after the reaction chamber is heated to the initial deposition temperature.
4. The silicon nitride deposition method of claim 1, wherein the reactant gas is SiH2Cl2And NH3。
5. The method as claimed in claim 4, wherein the normal deposition temperature is in the range of 700-800 ℃.
6. The silicon nitride deposition method of claim 5, wherein the difference between the initial deposition temperature and the normal deposition temperature is no greater than 100 ℃.
7. The silicon nitride deposition method of claim 1, wherein the ramp down rate is between 0.1 ℃/minute and 10 ℃/minute.
8. The silicon nitride deposition method of claim 1, wherein the reaction chamber is cooled down in stages by controlling a cooling rate.
9. A method for manufacturing a semiconductor device, comprising the silicon nitride deposition method according to any one of claims 1 to 8.
CN202011439749.8A 2020-12-10 2020-12-10 Silicon nitride deposition method and method for manufacturing semiconductor device Pending CN114628254A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202011439749.8A CN114628254A (en) 2020-12-10 2020-12-10 Silicon nitride deposition method and method for manufacturing semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202011439749.8A CN114628254A (en) 2020-12-10 2020-12-10 Silicon nitride deposition method and method for manufacturing semiconductor device

Publications (1)

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CN114628254A true CN114628254A (en) 2022-06-14

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