CN114618472B - Bismuth oxide photo-anode film and preparation method thereof - Google Patents
Bismuth oxide photo-anode film and preparation method thereof Download PDFInfo
- Publication number
- CN114618472B CN114618472B CN202210021611.9A CN202210021611A CN114618472B CN 114618472 B CN114618472 B CN 114618472B CN 202210021611 A CN202210021611 A CN 202210021611A CN 114618472 B CN114618472 B CN 114618472B
- Authority
- CN
- China
- Prior art keywords
- bismuth oxide
- electrode
- oxide film
- film
- photo
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 229910000416 bismuth oxide Inorganic materials 0.000 title claims abstract description 98
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 title claims abstract description 97
- 238000002360 preparation method Methods 0.000 title claims abstract description 22
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims abstract description 24
- 230000003647 oxidation Effects 0.000 claims abstract description 19
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 19
- GACUIHAEKGVEIC-UHFFFAOYSA-L [Bi+2]=O.C([O-])([O-])=O Chemical compound [Bi+2]=O.C([O-])([O-])=O GACUIHAEKGVEIC-UHFFFAOYSA-L 0.000 claims abstract description 17
- 238000004528 spin coating Methods 0.000 claims abstract description 17
- 238000011282 treatment Methods 0.000 claims abstract description 16
- 238000001354 calcination Methods 0.000 claims abstract description 13
- 239000011521 glass Substances 0.000 claims abstract description 13
- 238000001027 hydrothermal synthesis Methods 0.000 claims abstract description 12
- 239000011259 mixed solution Substances 0.000 claims abstract description 12
- 239000007864 aqueous solution Substances 0.000 claims abstract description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 7
- ZOMNIUBKTOKEHS-UHFFFAOYSA-L dimercury dichloride Chemical class Cl[Hg][Hg]Cl ZOMNIUBKTOKEHS-UHFFFAOYSA-L 0.000 claims abstract description 7
- 229910002804 graphite Inorganic materials 0.000 claims abstract description 7
- 239000010439 graphite Substances 0.000 claims abstract description 7
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims abstract description 3
- 229910017604 nitric acid Inorganic materials 0.000 claims abstract description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 20
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 15
- 238000010438 heat treatment Methods 0.000 claims description 15
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 9
- 230000001105 regulatory effect Effects 0.000 claims description 7
- 239000003792 electrolyte Substances 0.000 claims description 6
- 239000010453 quartz Substances 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 6
- 238000001816 cooling Methods 0.000 claims description 5
- 235000019441 ethanol Nutrition 0.000 claims description 5
- 239000000843 powder Substances 0.000 claims description 5
- 238000004321 preservation Methods 0.000 claims description 5
- 239000000243 solution Substances 0.000 claims description 5
- 238000009210 therapy by ultrasound Methods 0.000 claims description 5
- 230000015556 catabolic process Effects 0.000 claims description 3
- 238000006731 degradation reaction Methods 0.000 claims description 3
- 230000035484 reaction time Effects 0.000 claims description 3
- 239000000356 contaminant Substances 0.000 claims 1
- 230000003595 spectral effect Effects 0.000 abstract description 13
- 238000010521 absorption reaction Methods 0.000 abstract description 11
- 230000001699 photocatalysis Effects 0.000 abstract description 7
- 238000006243 chemical reaction Methods 0.000 abstract description 5
- 238000007146 photocatalysis Methods 0.000 abstract description 3
- 239000010408 film Substances 0.000 description 58
- 239000003344 environmental pollutant Substances 0.000 description 7
- 230000031700 light absorption Effects 0.000 description 6
- 231100000719 pollutant Toxicity 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 239000000047 product Substances 0.000 description 4
- 238000001228 spectrum Methods 0.000 description 4
- RBTBFTRPCNLSDE-UHFFFAOYSA-N 3,7-bis(dimethylamino)phenothiazin-5-ium Chemical compound C1=CC(N(C)C)=CC2=[S+]C3=CC(N(C)C)=CC=C3N=C21 RBTBFTRPCNLSDE-UHFFFAOYSA-N 0.000 description 3
- 230000003197 catalytic effect Effects 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 238000003760 magnetic stirring Methods 0.000 description 3
- 229960000907 methylthioninium chloride Drugs 0.000 description 3
- 238000003756 stirring Methods 0.000 description 3
- 238000001132 ultrasonic dispersion Methods 0.000 description 3
- 238000002371 ultraviolet--visible spectrum Methods 0.000 description 3
- 238000005406 washing Methods 0.000 description 3
- 239000002351 wastewater Substances 0.000 description 3
- 239000003054 catalyst Substances 0.000 description 2
- 230000000593 degrading effect Effects 0.000 description 2
- 230000004298 light response Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000013033 photocatalytic degradation reaction Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910001451 bismuth ion Inorganic materials 0.000 description 1
- -1 bismuth oxide compound Chemical class 0.000 description 1
- 229940075397 calomel Drugs 0.000 description 1
- 238000005119 centrifugation Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000006228 supernatant Substances 0.000 description 1
- 230000002195 synergetic effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000000870 ultraviolet spectroscopy Methods 0.000 description 1
- 238000001429 visible spectrum Methods 0.000 description 1
- 238000004065 wastewater treatment Methods 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J35/00—Catalysts, in general, characterised by their form or physical properties
- B01J35/30—Catalysts, in general, characterised by their form or physical properties characterised by their physical properties
- B01J35/39—Photocatalytic properties
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J23/00—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00
- B01J23/16—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of arsenic, antimony, bismuth, vanadium, niobium, tantalum, polonium, chromium, molybdenum, tungsten, manganese, technetium or rhenium
- B01J23/18—Arsenic, antimony or bismuth
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J35/00—Catalysts, in general, characterised by their form or physical properties
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J35/00—Catalysts, in general, characterised by their form or physical properties
- B01J35/30—Catalysts, in general, characterised by their form or physical properties characterised by their physical properties
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J35/00—Catalysts, in general, characterised by their form or physical properties
- B01J35/30—Catalysts, in general, characterised by their form or physical properties characterised by their physical properties
- B01J35/33—Electric or magnetic properties
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J37/00—Processes, in general, for preparing catalysts; Processes, in general, for activation of catalysts
- B01J37/02—Impregnation, coating or precipitation
- B01J37/0215—Coating
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J37/00—Processes, in general, for preparing catalysts; Processes, in general, for activation of catalysts
- B01J37/08—Heat treatment
- B01J37/10—Heat treatment in the presence of water, e.g. steam
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J37/00—Processes, in general, for preparing catalysts; Processes, in general, for activation of catalysts
- B01J37/34—Irradiation by, or application of, electric, magnetic or wave energy, e.g. ultrasonic waves ; Ionic sputtering; Flame or plasma spraying; Particle radiation
- B01J37/348—Electrochemical processes, e.g. electrochemical deposition or anodisation
-
- C—CHEMISTRY; METALLURGY
- C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F1/00—Treatment of water, waste water, or sewage
- C02F1/30—Treatment of water, waste water, or sewage by irradiation
-
- C—CHEMISTRY; METALLURGY
- C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F1/00—Treatment of water, waste water, or sewage
- C02F1/46—Treatment of water, waste water, or sewage by electrochemical methods
- C02F1/461—Treatment of water, waste water, or sewage by electrochemical methods by electrolysis
- C02F1/46104—Devices therefor; Their operating or servicing
- C02F1/46109—Electrodes
-
- C—CHEMISTRY; METALLURGY
- C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F1/00—Treatment of water, waste water, or sewage
- C02F1/46—Treatment of water, waste water, or sewage by electrochemical methods
- C02F1/461—Treatment of water, waste water, or sewage by electrochemical methods by electrolysis
- C02F1/46104—Devices therefor; Their operating or servicing
- C02F1/46109—Electrodes
- C02F2001/46133—Electrodes characterised by the material
- C02F2001/46138—Electrodes comprising a substrate and a coating
- C02F2001/46142—Catalytic coating
-
- C—CHEMISTRY; METALLURGY
- C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F2305/00—Use of specific compounds during water treatment
- C02F2305/10—Photocatalysts
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Water Supply & Treatment (AREA)
- Life Sciences & Earth Sciences (AREA)
- Health & Medical Sciences (AREA)
- Electrochemistry (AREA)
- Toxicology (AREA)
- Environmental & Geological Engineering (AREA)
- Hydrology & Water Resources (AREA)
- Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- Thermal Sciences (AREA)
- Plasma & Fusion (AREA)
- Catalysts (AREA)
- Electrolytic Production Of Non-Metals, Compounds, Apparatuses Therefor (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Electrodes For Compound Or Non-Metal Manufacture (AREA)
Abstract
The invention relates to the technical field of photocatalysis/photoelectrocatalysis, in particular to a bismuth oxide photo-anode film with an adjustable spectral absorption range and a preparation method thereof, which comprises the following steps: (1) Bi (NO) 3 ) 3 ∙5H 2 O and citric acid are dissolved in nitric acid aqueous solution, and bismuth oxide carbonate is obtained through hydrothermal reaction; (2) Performing spin coating and calcination on the bismuth oxide carbonate mixed solution on conductive glass to obtain a bismuth oxide film electrode; (3) Placing bismuth oxide film electrode in a reactor, wherein the bismuth oxide film electrode is a working electrode, a reference electrode is a saturated calomel electrode, a counter electrode is a graphite rod electrode, a light source is visible light, and a bias voltage of 1.0-3.0V is applied to the working electrode for anodic oxidation treatmentAnd obtaining the bismuth oxide photo-anode film. The invention carries out anodic oxidation treatment on the bismuth oxide film to lead part of Bi in the bismuth oxide film 3+ Conversion to Bi 5+ The forbidden bandwidth of the bismuth oxide film is effectively reduced, and the absorption response of the bismuth oxide film to visible light is greatly widened.
Description
Technical Field
The invention relates to the technical field of photocatalysis/photoelectrocatalysis, in particular to a bismuth oxide photo-anode film and a preparation method thereof.
Background
The semiconductor photoelectrocatalysis technology is an enhanced photoelectrocatalysis technology capable of effectively promoting electron-hole separation and utilizing photoelectric synergistic effect, has the advantages of strong oxidizing capacity, high treatment efficiency, easy recycling, and the like, and is one of the water treatment technologies with the most application prospects at present.
The semiconductor bismuth oxide has the characteristics of good visible light response, high hole oxidation capability of valence band, environmental friendliness and the like, bismuth oxide with different crystal structures and the bismuth oxide compound with the bismuth oxide are often used for research of photocatalytic removal of environmental pollutants, and the bismuth oxide is a semiconductor catalytic material with good application prospect. However, the existing bismuth oxide and the composite catalytic material thereof mainly depend on the photocatalysis treatment technology in the field of wastewater treatment, and the catalyst has a low response range to visible light, so that the activity of the material for catalyzing and degrading pollutants is improved. The method for improving the visible light absorption range of bismuth oxide is mainly an ion doping and semiconductor compounding method, but the visible light absorption range of the catalyst is still not effectively expanded. Therefore, the development of bismuth oxide materials with high visible light response and adjustable spectral absorption range has important research significance for treating wastewater pollutants by using semiconductor photoelectrocatalysis materials.
Disclosure of Invention
The invention relates to a bismuth oxide photo-anode film with an adjustable spectral absorption range and a preparation method thereof, and the obtained bismuth oxide photo-catalytic anode film can greatly improve the absorption response to the visible spectrum of sunlight, realize the adjustable spectral absorption range, and can be applied to the field of photo-catalytic treatment of wastewater pollutants to realize the effective removal of the wastewater pollutants.
In order to achieve the above purpose, the present invention adopts the following technical scheme:
the preparation method of the bismuth oxide photo-anode film comprises the following steps:
(1) Preparation of bismuth oxide carbonate
Bi (NO) 3 ) 3 ∙5H 2 O and citric acid are dissolved in nitric acid aqueous solution, the pH value is regulated to 3-5, and then hydrothermal reaction is carried out to obtain bismuth oxide carbonate;
(2) Preparation of bismuth oxide film electrode
Dispersing bismuth oxide carbonate powder in the step (1) in absolute ethyl alcohol to prepare 10-50 mg/mL mixed solution, spin-coating the mixed solution on conductive glass, heating and calcining the spin-coated conductive glass, and finally cooling to obtain a bismuth oxide film electrode;
(3) Preparation of bismuth oxide photo-anode film
Placing the bismuth oxide film electrode in the step (2) in a reactor provided with a three-electrode working system, wherein the bismuth oxide film electrode is a working electrode, the reference electrode is a saturated calomel electrode, the counter electrode is a graphite rod electrode, the light source is visible light, the distance between the bismuth oxide film working electrode and the light source is 5-30 cm, and applying 1.0-3.0V bias voltage to the working electrode to carry out anodic oxidation treatment on the bismuth oxide film electrode for 30-100 min to obtain the bismuth oxide photo-anode film.
Preferably, the Bi (NO) of step (1 3 ) 3 ∙5H 2 The molar ratio of O to citric acid is 1:1-1.5.
Preferably, the spin coating in the step (2) is spin coating at 300-1500 rpm for 2-10 seconds and at 2000-5000 rpm for 5-50 seconds; the spin coating times are 2-10 times.
Preferably, the temperature of the heating and calcining in the step (2) is 200-500 ℃, the temperature rising rate of the heating and calcining is 1-10 ℃ per minute, and the heat preservation time is 1-8 hours.
Preferably, the conductive glass in the step (2) is put into a mixed solution of water, isopropanol and ethanol in a volume ratio of 1:1:1 for ultrasonic treatment for 1 hour before use, and then is cleaned and dried.
Preferably, the reactor with the three-electrode working system in the step (3) is a quartz reactor, and the electrolyte is 0.05-2 mol.L -1 Na 2 SO 4 An aqueous solution.
Preferably, step (1) uses NaOH solution to adjust the pH.
Preferably, the hydrothermal reaction temperature in the step (1) is 150-250 ℃ and the hydrothermal reaction time is 10-30 hours.
The bismuth oxide photo-anode film prepared by any one of the preparation methods.
The application of the bismuth oxide photo-anode film in the field of photoelectrocatalysis degradation of pollutants.
Compared with the prior art and products, the invention has the following beneficial effects:
1. the bismuth oxide film is anodized under the condition of certain voltage and visible light irradiation, and vacancies are introduced into bismuth oxide crystal lattice, so that part of Bi in the bismuth oxide film 3+ Conversion to Bi 5+ The forbidden bandwidth of the bismuth oxide film is effectively reduced, and the absorption response of the bismuth oxide film to visible light is greatly widened.
2. The bismuth ion valence state in the bismuth oxide crystal lattice can be effectively regulated and controlled to be converted from +3 valence to +5 valence by regulating the magnitude of externally applied bias voltage in the anodic oxidation process, so that the movement of the light absorption band edge of the bismuth oxide film is regulated and controlled, and the effective regulation and control of the spectral absorption range of the bismuth oxide film are realized.
Drawings
FIG. 1 shows XRD patterns of bismuth oxide thin films after different bias oxidation treatments according to an embodiment of the present invention;
FIG. 2 is a graph of UV diffuse reflectance of a bismuth oxide photo-anode film after oxidation treatment of bismuth oxide and different biases prepared by an embodiment of the present invention;
FIG. 3 is a graph showing the photo-catalytic degradation of methylene blue activity of bismuth oxide photo-anode films after various bias oxidation treatments obtained in the examples of the present invention.
Detailed Description
The present invention will be further specifically illustrated by the following examples, which are not to be construed as limiting the invention, but rather as falling within the scope of the present invention, for some non-essential modifications and adaptations of the invention that are apparent to those skilled in the art based on the foregoing disclosure.
Example 1
(1) Preparation of bismuth oxide carbonate
Weigh 2.91 g Bi (NO) 3 ) 3 ∙5H 2 O and 1.20 g citric acid are fully dissolved in 1 mol.L -1 HNO 3 After magnetic stirring, 1 mol.L of the aqueous solution of (C) -1 And regulating the pH value of the NaOH solution to 4, stirring for 30min, and performing hydrothermal reaction at 180 ℃ for 24h. And washing and drying the product after the reaction is finished to obtain the bismuth oxide carbonate.
(2) Preparation of bismuth oxide film electrode
And (3) placing the FTO conductive glass into a mixed solution of water, isopropanol and ethanol in a volume ratio of 1:1:1 for ultrasonic treatment of 1:1 h, and airing for standby. Dispersing 0.3g of bismuth oxide carbonate powder in the step (1) in 10 mL absolute ethyl alcohol, and performing ultrasonic dispersion in an ultrasonic cleaner to form a mixed solution of 30 mg/mL, and performing spin coating on conductive glass by using a spin coater with a spin coating parameter of 1000 (rotating speed and rpm) at a low speed, 5 s, 3000 (rotating speed and rpm) at a high speed and 15 s for 5 times by taking 100 mu L of the mixed solution each time. Bi to be spin-coated 2 O 2 CO 3 And (3) carrying out heating calcination on the FTO at 360 ℃, wherein the heating rate of the heating calcination is 3 ℃ per minute, the heat preservation time is 2 hours, and finally, naturally cooling to obtain the bismuth oxide film electrode.
(3) Preparation of bismuth oxide photo-anode film with adjustable spectral range
Placing the bismuth oxide film electrode in the step (2) in a quartz reactor with a three-electrode working system, wherein the electrolyte is 0.5 mol.L -1 Na 2 SO 4 The bismuth oxide film electrode is a working electrode, the reference electrode is a saturated calomel electrode, the counter electrode is a graphite rod electrode, and the light source is visible light. The distance between the bismuth oxide film working electrode and the light source is thatAnd (3) applying a bias voltage of 1.0V to the working electrode through an electrochemical workstation at 15cm, and performing anodic oxidation treatment on the bismuth oxide film electrode for 60min to obtain the bismuth oxide photo-anode film with an adjustable spectral range. The XRD spectrum of the obtained bismuth oxide anode film pretreated by 1.0V bias is shown in figure 1, the ultraviolet visible spectrum is shown in figure 2, the bismuth oxide film has red shift to the visible light absorption band edge compared with the bismuth oxide electrode pretreated by anodic oxidation, and the effective regulation and control of the bismuth oxide spectral absorption range can be realized.
Example 2
(1) Preparation of bismuth oxide carbonate
Weigh 2.91 g Bi (NO) 3 ) 3 ∙5H 2 O and 1.50 g citric acid are fully dissolved in 1 mol.L -1 HNO 3 After magnetic stirring, 1 mol.L of the aqueous solution of (C) -1 The pH of the NaOH solution is adjusted to 3, and the hydrothermal reaction is carried out after stirring for 30min, wherein the hydrothermal reaction temperature is 150 ℃ and the hydrothermal reaction time is 30 h. And washing and drying the product after the reaction is finished to obtain the bismuth oxide carbonate.
(2) Preparation of bismuth oxide film electrode
And (3) placing the FTO conductive glass into a mixed solution of water, isopropanol and ethanol in a volume ratio of 1:1:1 for ultrasonic treatment of 1:1 h, and airing for standby. Dispersing 0.1g of bismuth oxide carbonate powder in the step (1) in 10 mL absolute ethyl alcohol, performing ultrasonic dispersion in an ultrasonic cleaner to form 10 mg/mL mixed liquor, and performing spin coating on conductive glass by using a spin coater with a spin coating parameter of low speed 800 (rotating speed, rpm), 5 s, high speed 4000 (rotating speed, rpm), 15 s and spin coating times of 10 times by taking 100 mu L of the mixed liquor each time. Bi to be spin-coated 2 O 2 CO 3 And (3) carrying out heating and calcining on the FTO at 200 ℃, wherein the heating rate of the heating and calcining is 1 ℃ per minute, the heat preservation time is 8 hours, and finally naturally cooling to obtain the bismuth oxide film electrode.
(3) Preparation of bismuth oxide photo-anode film with adjustable spectral range
Placing the bismuth oxide film electrode in the step (2) in a quartz reactor with a three-electrode working system, wherein the electrolyte is 0.05mol.L -1 Na 2 SO 4 The bismuth oxide film electrode is a working electrode, the reference electrode is a saturated calomel electrode, the counter electrode is a graphite rod electrode, and the light source is visible light. The distance between the bismuth oxide film working electrode and the light source is 15cm, 1.3V bias voltage is applied to the working electrode through an electrochemical workstation, and the bismuth oxide film electrode is subjected to anodic oxidation treatment for 60min, so that the bismuth oxide photo-anode film with the adjustable spectral range is obtained. The XRD spectrum of the obtained bismuth oxide anode film pretreated by 1.3V bias is shown in figure 1, the ultraviolet visible spectrum is shown in figure 2, the bismuth oxide film has red shift to the visible light absorption band edge compared with the bismuth oxide electrode pretreated by anodic oxidation, and the effective regulation and control of the bismuth oxide spectral absorption range can be realized.
Example 3
(1) Preparation of bismuth oxide carbonate
Weigh 2.91 g Bi (NO) 3 ) 3 ∙5H 2 O and 2.0. 2.0 g citric acid are fully dissolved in 1 mol.L -1 HNO 3 After magnetic stirring, 1 mol.L of the aqueous solution of (C) -1 And regulating the pH value of the NaOH solution to 5, stirring for 30min, and performing hydrothermal reaction at 200 ℃ for 10h. And washing and drying the product after the reaction is finished to obtain the bismuth oxide carbonate.
(2) Preparation of bismuth oxide film electrode
And (3) placing the FTO conductive glass into a mixed solution of water, isopropanol and ethanol in a volume ratio of 1:1:1 for ultrasonic treatment of 1:1 h, and airing for standby. Dispersing 0.5g of bismuth oxide carbonate powder in the step (1) in 10 mL absolute ethyl alcohol, and performing ultrasonic dispersion in an ultrasonic cleaner to form 50 mg/mL mixed liquid, and performing spin coating on conductive glass by using a spin coater with a spin coating parameter of low speed 800 (rotating speed, rpm), 5 s, high speed 4000 (rotating speed, rpm), 15 s and spin coating times of 2 times by taking 100 mu L of the mixed liquid each time. Bi to be spin-coated 2 O 2 CO 3 And (3) carrying out heating calcination on the FTO at 360 ℃, wherein the heating rate of the heating calcination is 8 ℃ per minute, the heat preservation time is 8 hours, and finally, naturally cooling to obtain the bismuth oxide film electrode.
(3) Preparation of bismuth oxide photo-anode film with adjustable spectral range
Placing the bismuth oxide film electrode in the step (2) in a quartz reactor with a three-electrode working system, wherein the electrolyte is 0.1 mol.L -1 Na 2 SO 4 The bismuth oxide film electrode is a working electrode, the reference electrode is a saturated calomel electrode, the counter electrode is a graphite rod electrode, and the light source is visible light. The distance between the bismuth oxide film working electrode and the light source is 10cm, 1.8V bias voltage is applied to the working electrode through an electrochemical workstation, and the bismuth oxide film electrode is subjected to anodic oxidation treatment for 100min, so that the bismuth oxide photo-anode film with the adjustable spectral range is obtained. The XRD spectrum of the obtained bismuth oxide anode film pretreated by 1.8V bias is shown in figure 1, the ultraviolet visible spectrum is shown in figure 2, the bismuth oxide film has obvious red shift to the visible light absorption band edge compared with the bismuth oxide electrode pretreated by anodic oxidation, and the effective regulation and control of the bismuth oxide spectrum absorption range can be realized.
Example 4
(1) Photoelectrocatalysis activity test of prepared film photo anode
Methylene blue is used as target pollutant for photoelectrocatalytic degradation, the concentration is mg.L < -1 >, and the electrolyte is 0.5 mol.L -1 Na 2 SO 4 The bismuth oxide electrode prepared in examples 1-3 was used as a working electrode, a calomel electrode as a reference electrode, and a graphite rod as a counter electrode. The test was performed in a 100 mL homemade quartz reactor. Light source 500W xenon lamp source, filter the ultraviolet below 420 nm with filter, apply voltage 1.0V to working electrode with three electrode system, test the photo-catalytic degradation activity of bismuth oxide photo-anode, sample once every 20 min with pipetting gun, take supernatant after quick centrifugation, test dye concentration on ultraviolet visible spectrophotometer. The test result is shown in figure 3, and compared with the bismuth oxide film photo-anode which is not subjected to anodic oxidation treatment, the photo-catalytic activity of the bismuth oxide electrode subjected to different bias anodic oxidation treatments for degrading methylene blue is effectively improved, wherein the catalytic activity of the bismuth oxide film electrode subjected to anodic oxidation pretreatment of 1.8V is highest, and the activity of the bismuth oxide film photo-anode is improved by about 20% compared with that of the bismuth oxide film photo-anode which is not subjected to anodic oxidation treatment.
Claims (8)
1. The preparation method of the bismuth oxide photo-anode film is characterized by comprising the following steps:
(1) Preparation of bismuth oxide carbonate:
bi (NO) 3 ) 3 ∙5H 2 O and citric acid are dissolved in nitric acid aqueous solution, the pH value is regulated to 3-5, and then hydrothermal reaction is carried out to obtain bismuth oxide carbonate;
(2) Preparation of bismuth oxide film electrode:
dispersing bismuth oxide carbonate powder in the step (1) in absolute ethyl alcohol to prepare 10-50 mg/mL mixed solution, spin-coating the mixed solution on conductive glass, heating and calcining the spin-coated conductive glass, and finally cooling to obtain a bismuth oxide film electrode; the spin coating is that the spin coating is carried out for 2-10 seconds at 300-1500 rpm and for 5-50 seconds at 2000-5000 rpm; the spin coating times are 2-10 times;
(3) Preparing a bismuth oxide photo-anode film:
placing the bismuth oxide film electrode in the step (2) into a quartz reactor with a three-electrode working system, wherein the bismuth oxide film electrode is a working electrode, a reference electrode is a saturated calomel electrode, a counter electrode is a graphite rod electrode, and the electrolyte is 0.05-2 mol.L -1 Na 2 SO 4 An aqueous solution; the light source is visible light, the distance between the working electrode of the bismuth oxide film and the light source is 5-30 cm, and the working electrode is applied with 1.0-3.0V bias voltage to carry out anodic oxidation treatment for 30-100 min, so as to obtain the bismuth oxide photo-anode film.
2. The method according to claim 1, wherein the Bi (NO 3 ) 3 ∙5H 2 The molar ratio of O to citric acid is 1:0.5-2.
3. The method according to claim 1, wherein the temperature of the heating and calcining in the step (2) is 200-500 ℃, the temperature rise rate of the heating and calcining is 1-10 ℃ per minute, and the heat preservation time is 1-8 hours.
4. The method according to claim 1, wherein the conductive glass in the step (2) is washed by ultrasonic treatment for 1 hour in a mixed solution of water, isopropanol and ethanol in a volume ratio of 1:1:1 before use, and dried.
5. The method of claim 1, wherein step (1) uses NaOH solution to adjust the pH.
6. The method according to claim 1, wherein the hydrothermal reaction temperature in step (1) is 150 to 250 ℃ and the hydrothermal reaction time is 10 to 30 hours.
7. A bismuth oxide photoanode film prepared by the method of any one of claims 1 to 6.
8. Use of the bismuth oxide photo-anode film as claimed in claim 7 for the photoelectrocatalytic degradation of contaminants.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210021611.9A CN114618472B (en) | 2022-01-10 | 2022-01-10 | Bismuth oxide photo-anode film and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210021611.9A CN114618472B (en) | 2022-01-10 | 2022-01-10 | Bismuth oxide photo-anode film and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN114618472A CN114618472A (en) | 2022-06-14 |
| CN114618472B true CN114618472B (en) | 2023-11-10 |
Family
ID=81898112
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210021611.9A Active CN114618472B (en) | 2022-01-10 | 2022-01-10 | Bismuth oxide photo-anode film and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN114618472B (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102962051A (en) * | 2012-11-21 | 2013-03-13 | 同济大学 | Method for preparing beta-Bi2O3/TiO2-NTs composite photocatalyst with high stability visible light catalytic activity |
| JP2015088725A (en) * | 2013-09-25 | 2015-05-07 | 積水化学工業株式会社 | Thin film solar cell, semiconductor thin film, and coating liquid for semiconductor formation |
| CN106498372A (en) * | 2016-11-01 | 2017-03-15 | 西北师范大学 | Light deposition prepares Bi/BiVO4The method of composite photoelectric anode material |
| CN109250755A (en) * | 2018-09-14 | 2019-01-22 | 重庆工商大学 | A kind of bismuth oxide photocatalyst and preparation method thereof of the different crystal phases containing bismuth defect |
| CN110227439A (en) * | 2019-06-21 | 2019-09-13 | 河南大学 | A kind of preparation method of the bismuth compound hetero-junctions composite nano materials rich in Lacking oxygen |
| CN112520819A (en) * | 2020-12-02 | 2021-03-19 | 西安建筑科技大学 | Bismuth-series three-dimensional microsphere heterojunction photoelectrode and preparation and application thereof |
-
2022
- 2022-01-10 CN CN202210021611.9A patent/CN114618472B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102962051A (en) * | 2012-11-21 | 2013-03-13 | 同济大学 | Method for preparing beta-Bi2O3/TiO2-NTs composite photocatalyst with high stability visible light catalytic activity |
| JP2015088725A (en) * | 2013-09-25 | 2015-05-07 | 積水化学工業株式会社 | Thin film solar cell, semiconductor thin film, and coating liquid for semiconductor formation |
| CN106498372A (en) * | 2016-11-01 | 2017-03-15 | 西北师范大学 | Light deposition prepares Bi/BiVO4The method of composite photoelectric anode material |
| CN109250755A (en) * | 2018-09-14 | 2019-01-22 | 重庆工商大学 | A kind of bismuth oxide photocatalyst and preparation method thereof of the different crystal phases containing bismuth defect |
| CN110227439A (en) * | 2019-06-21 | 2019-09-13 | 河南大学 | A kind of preparation method of the bismuth compound hetero-junctions composite nano materials rich in Lacking oxygen |
| CN112520819A (en) * | 2020-12-02 | 2021-03-19 | 西安建筑科技大学 | Bismuth-series three-dimensional microsphere heterojunction photoelectrode and preparation and application thereof |
Non-Patent Citations (4)
| Title |
|---|
| Enhanced Performance of β-Bi2O3 by In-Situ Photo-Conversion to Bi2O3-BiO2-x Composite Photoanode for Solar Water Splitting;Kalyan C. Chitrada et al.;《Journal of The Electrochemical Society》;第163卷(第7期);546-558 * |
| Facile Fabrication of Porous Bi2O3 Microspheres by Thermal Treatment of Bi2O2CO3 Microspheres and its Photocatalysis Properties;Gangqiang Zhu et al.;《Journal of Cluster Science》;第24卷;829-841 * |
| Min-Woo Kim et al..Highly nanotextured β-Bi2O3 pillars by electrostatic spray deposition as photoanodes for solar water splitting.《Journal of Alloys and Compounds》.2018,第764卷881-889. * |
| 铋基宽光谱响应光催化材料的研究进展;黄圣男等;《化学工程与技术》;第10卷(第6期);435-441 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN114618472A (en) | 2022-06-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN110273165B (en) | Method for preparing oxygen-deficient bismuth tungstate photoelectrode by low-temperature plasma technology | |
| CN110368962B (en) | BiOI/WO3Preparation method, product and application of heterojunction efficient photoelectrocatalysis electrode | |
| CN102125863A (en) | Preparation method of graphite phase carbon nitride/rutile monocrystal titanium dioxide (TiO2) nanowire array | |
| CN110565111B (en) | Hexagonal column type WO3/Bi2WO6Preparation method of composite photoelectrode film | |
| CN101844077B (en) | Preparation method of carbon and nitrogen modified nano-titanium dioxide thin film with visible light activity | |
| CN111821966A (en) | Black TiO2Preparation method of nanosheet photocatalyst | |
| CN105056980A (en) | Ag3PO4/TiO2 nanotube array composite photocatalyst and preparation method thereof | |
| CN108579768B (en) | Few-layer MoS2Modified Ag-TiO2Preparation method of nano composite film | |
| CN108842168B (en) | Two-step electrochemical method for preparing g-C3N4/MMO composite film photoelectrode | |
| CN112266045A (en) | Photoanode for retarding corrosion in photoelectrocatalysis wastewater treatment process by utilizing amorphous cobalt phosphate Co-Pi and preparation method and application thereof | |
| CN104098134A (en) | Preparation method and application of TiO2 nanotube coated with amorphous layer | |
| CN109012697B (en) | Sunlight all-band TiO2/VS4Method for preparing photocatalyst | |
| CN108273486B (en) | Carbon nano tube/secondary anode oxidized TiO2Nanotube photocatalyst material and preparation method and application thereof | |
| CN110965073A (en) | WO containing defects3Preparation method of photoelectrode | |
| CN109979643B (en) | ZnO/ZnSe/CdSe/MoS2Preparation method and application of core-shell structure film electrode | |
| CN114618472B (en) | Bismuth oxide photo-anode film and preparation method thereof | |
| CN111573773B (en) | Application of titanium-based coordination polymer in photocatalytic degradation of dye wastewater | |
| CN109482218B (en) | By using Ni2Method for enhancing photocatalysis by P nano crystal | |
| CN108677208B (en) | Preparation method of manganese-modified titanium dioxide nanotube for enhancing photoelectric response | |
| CN113871631B (en) | Photocatalytic fuel cell for treating azo dye wastewater and preparation method thereof | |
| CN111569905B (en) | CuInS2/TiO2Composite photocatalyst and preparation method and application thereof | |
| CN107557810A (en) | A kind of Z-type hetero-junctions Cu2O_ graphenes _ α Fe2O3Nano-tube array photochemical catalyst and its preparation | |
| CN109772381B (en) | FTO surface-based bismuth oxyhalide/calcium bismuthate composite material, preparation method and application of FTO surface-based bismuth oxyhalide/calcium bismuthate composite material in photocatalytic degradation of dye in water body | |
| CN109913892B (en) | Method for photoelectrocatalytic oxidation of xylose by indium sulfide/nickel iron hydrotalcite composite membrane | |
| CN110451559A (en) | A kind of Detitanium-ore-type TiO of [111]-crystal face exposure2Nanocrystalline preparation method and application |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |