CN114609221A - Oxide semiconductor biosensor, manufacturing method and using method - Google Patents
Oxide semiconductor biosensor, manufacturing method and using method Download PDFInfo
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Classifications
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- G—PHYSICS
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- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
- G01N27/403—Cells and electrode assemblies
- G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
- G01N27/4145—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS specially adapted for biomolecules, e.g. gate electrode with immobilised receptors
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y15/00—Nanotechnology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
- G01N27/403—Cells and electrode assemblies
- G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
- G01N27/4148—Integrated circuits therefor, e.g. fabricated by CMOS processing
Abstract
The invention discloses an oxide semiconductor biosensor, a manufacturing method and a using method thereof, and relates to an application technology of a semiconductor device in biological detection. The scheme is provided aiming at the problem that ions in an electrolyte solution can erode an active layer through electrochemical action under the action of an electric field to cause unstable device performance in the existing electrolyte grid thin film transistor type biosensor technology. It is essential that the semiconductor active layer in direct contact with the electrolyte solution is a chemically stable single crystal semiconductor. The method has the advantages of avoiding the problem of device performance degradation caused by erosion of crystal boundaries, improving the stability of the EGTFT sensor performance, and having important significance for promoting the practical application of the semiconductor field effect transistor type biosensor.
Description
Technical Field
The present invention relates to semiconductor devices, and more particularly, to an oxide semiconductor biosensor, a method of manufacturing the same, and a method of using the same.
Background
With the improvement of the quality of life, modern people pay more and more attention to the problems of food safety and life health, and the rapid development of the research and application of the biosensing technology is promoted. Electrochemical sensing technology is a major branch of biosensing technology, and semiconductor field effect transistor based sensing devices are a representative class of the same. The biosensing technology is based on pH sensing and has evolved into a series of biosensing technologies such as glucose detection, DNA sequencing and the like.
Although an extra sensing layer is removed in the structure of the Electrolyte Gate Thin Film Transistor (EGTFT), the oxide semiconductor active layer directly serves as the sensing layer, namely, an electrolyte solution directly contacts the active layer, so that the change of the surface potential can be directly loaded on the surface of a channel of the active layer, the sensitivity of the device is improved, and the structure of the device is simplified. On the other hand, however, the current electrolyte gate thin film transistor type biosensor employs a polycrystalline or amorphous oxide semiconductor. Since the active layer is in direct contact with the electrolyte solution, the amorphous or polycrystalline oxide semiconductor has problems of poor compactness, grain boundary defects, and the like. Ions in the electrolyte solution can attack the active layer or electrochemically dope the active layer under the action of an electric field during use. Ions entering the active layer cannot be removed through a simple cleaning process, irreversible influence is caused on the performance of the device, and the problem is represented as unstable performance of the device.
Disclosure of Invention
The present invention is directed to an oxide semiconductor biosensor, a method for manufacturing the same, and a method for using the same, which solve the above problems of the prior art.
The semiconductor active layer of the oxide semiconductor biosensor, which is in direct contact with the electrolyte solution, is a single crystal semiconductor.
The semiconductor active layer is single crystal Ga2O3Film or Ga2O3One of the/AlGaO heterostructures.
The oxide semiconductor biosensor comprises a single crystal substrate, wherein a source electrode and a drain electrode which are relatively isolated are arranged on the single crystal substrate; the source electrode and the drain electrode are oppositely extended at the front end of the single crystal substrate, and are electrically connected with an external circuit as pins at the rear end of the single crystal substrate; the single crystal substrate is provided with the semiconductor active layer at the middle position where the source electrode and the drain electrode oppositely extend, one side of the semiconductor active layer is inserted into the extension part of the source electrode and is electrically connected with the extension part, and the other side of the semiconductor active layer is inserted into the extension part of the drain electrode and is electrically connected with the extension part; the single crystal substrate is provided with gate electrodes which are mutually isolated between the source electrode pin and the drain electrode pin;
the single crystal substrate is provided with a protective layer covering the source electrode, the drain electrode and the gate electrode on the upper surface; the protective layer is provided with a first window for exposing the semiconductor active layer at the position above the semiconductor active layer, and a second window for exposing the gate electrode at the position above the gate electrode; and the source electrode, the drain electrode and the gate electrode extend out of the protective layer at the rear end of the single crystal substrate.
The invention discloses a manufacturing method of an oxide semiconductor biosensor, which comprises the following steps:
a step of preparing a single crystal substrate;
a step of epitaxially growing and patterning a semiconductor active layer on the single crystal substrate; the semiconductor active layer is a single crystal semiconductor and is used for being in direct contact with an electrolyte solution;
manufacturing and patterning a source electrode, a drain electrode and a gate electrode;
a step of forming ohmic contacts between the source electrode and the semiconductor active layer and between the drain electrode and the semiconductor active layer;
a step of manufacturing a protective layer; the protective layer is used for preventing the source electrode and/or the drain electrode from contacting with an electrolyte solution, and is provided with a first window for exposing the semiconductor active layer and a second window for exposing the gate electrode;
an optional step of surface modification and/or biomolecular modification of the semiconductor active layer.
When the epitaxial growth of the semiconductor active layer is homoepitaxial: the single crystal substrate and the semiconductorThe active layers are all beta-Ga2O3Single crystal; the thickness of the semiconductor active layer is 10-100 nm, and the doping concentration is 1016～1018cm-3。
When the epitaxial growth of the semiconductor active layer is heteroepitaxy: the single crystal substrate is one of sapphire, semi-insulating Si and semi-insulating SiC, and the semiconductor active layer is alpha-Ga2O3Single crystal, beta-Ga2O3Single crystal of epsilon-Ga2O3Single crystal or Ga2O3One of/AlGaO heterostructures; a buffer layer is introduced between the single crystal substrate and the semiconductor active layer to relieve lattice matching stress.
When the semiconductor active layer is Ga2O3In the case of the/AlGaO heterostructure, two-dimensional electron gas is introduced into the semiconductor active layer to improve charge mobility.
The invention discloses a using method of an oxide semiconductor biosensor, which is characterized in that an electrolyte solution to be detected is dripped on the surface of the oxide semiconductor biosensor, so that the electrolyte solution is simultaneously and electrically connected with a semiconductor active layer and a gate electrode: and externally connecting the parts of the source electrode, the drain electrode and the gate electrode, which extend out of the protective layer, with a test circuit.
If the semiconductor active layer does not need surface modification and/or biomolecule modification, the electrolyte solution to be detected is directly added to the exposed parts of the gate electrode and the semiconductor active layer in the protective layer, so that the electrolyte solution serves as a gate dielectric layer to realize the electrical connection between the gate electrode and the semiconductor active layer.
If the semiconductor active layer is subjected to surface modification and/or biomolecule modification, adding a solution to be tested containing biological information to the exposed parts of the gate electrode and the semiconductor active layer in the protective layer, incubating for a period of time, washing with deionized water, and then drying with nitrogen, wherein the biological information to be tested is fixed on the surface of the active layer; dropping an electrolyte buffer solution on the exposed parts of the gate electrode and the semiconductor active layer in the protective layer, so that the electrolyte buffer solution serves as a gate dielectric layer to realize the electrical connection between the gate electrode and the semiconductor active layer; the electrolyte buffer is phosphate buffer.
The oxide semiconductor biosensor, the manufacturing method and the using method have the advantages that the EGTFT device structure is adopted, and the electrolyte solution to be detected directly contacts the semiconductor active layer, so that the sensitivity of the device is ensured while the structure of the device is further simplified; on the basis, the epitaxial monocrystal gallium oxide film is used as an oxide semiconductor active layer, and biomolecule modification can be directly carried out without introducing an additional sensing layer, so that the function of the sensing device is ensured, the problem of device performance degradation caused by erosion generated by a crystal boundary is avoided, the stability of the performance of the EGTFT sensing device is improved, and the method has important significance for promoting the practical application of the semiconductor field effect transistor type biosensor device.
Drawings
FIG. 1 is a schematic perspective view of an oxide semiconductor biosensor according to the present invention.
FIG. 2 is a schematic perspective view of the oxide semiconductor biosensor shown in FIG. 1 with a protective layer removed.
FIG. 3 is a schematic front view of an oxide semiconductor biosensor according to the present invention.
Fig. 4 is a cross-sectional view taken along line a-a of fig. 3.
FIG. 5 is a cross-sectional view taken along line B1-B1 of FIG. 3.
FIG. 6 is a schematic perspective view of an oxide semiconductor biosensor according to the present invention.
FIG. 7 is a schematic diagram of the front view structure of the oxide semiconductor biosensor in accordance with the present invention.
FIG. 8 is a cross-sectional view taken along line B2-B2 of FIG. 7.
Reference numerals:
10-a single crystal substrate;
21-source electrode, 22-drain electrode, 23-gate electrode, 24-semiconductor active layer;
30-protective layer, 31-first window, 32-second window;
40-electrolyte solution.
Detailed Description
As shown in fig. 1 to 5, an oxide semiconductor biosensor according to the present invention includes a single crystal substrate 10, and a source electrode 21 and a drain electrode 22 which are relatively separated are provided on the single crystal substrate 10. The source electrode 21 and the drain electrode 22 are located at the front end of the single crystal substrate 10 and extend oppositely, and the location located at the rear end of the single crystal substrate 10 is used as a pin to be electrically connected with an external circuit. The single crystal substrate 10 is provided with the semiconductor active layer 24 at the middle position where the source electrode 21 and the drain electrode 22 extend oppositely, one side of the semiconductor active layer 24 is inserted into and electrically connected with the extension part of the source electrode 21, and the other side is inserted into and electrically connected with the extension part of the drain electrode 22. The single crystal substrate 10 is provided with gate electrodes 23 isolated from each other between the leads of the source electrode 21 and the drain electrode 22.
The single crystal substrate 10 is provided with a protective layer 30 covering the source electrode 21, the drain electrode 22, and the gate electrode 23 on the upper surface. The protective layer 30 is provided with a first window 31 for exposing the semiconductor active layer 24 at a position above the semiconductor active layer 24, and a second window 32 for exposing the gate electrode 23 at a position above the gate electrode 23. The source electrode 21, the drain electrode 22 and the gate electrode 23 all extend out of the protective layer 30 at the rear end of the single crystal substrate 10.
The semiconductor active layer 24 is inserted into the source electrode 21 and the drain electrode 22, respectively, in order to ensure the stability of the contact between the semiconductor active layer 24 and the semiconductor active layer, and prevent the device from failing under the influence of some factors, such as the active layer is etched during the patterning etching, or the active layer is slightly deviated during the photolithography.
The single crystal substrate 10 is made of one of semi-insulating gallium oxide, sapphire, semi-insulating Si, and semi-insulating SiC.
The semiconductor active layer 24 is single crystal Ga2O3Film or Ga2O3One of the/AlGaO heterostructures.
The semiconductor active layer 24 serves as a sensing layer, and may or may not be subjected to surface modification and biomolecule modification, so as to meet different detection requirements.
Surface modification methods include, but are not limited to, aldylation or hydroxylation surface modification of the sensing layer by silane coupling agents and the like. In order to realize the specific connection between the biological information to be detected and the sensing layer, an antigen or an antibody, glucose oxidase and the like are modified on the surface of the sensing layer, so that the specific biological information to be detected can be captured.
The materials of the source electrode 21, the drain electrode 22 and the gate electrode 23 are preferably the same material, and can be prepared simultaneously by one-step process, and a laminated structure of Ti/Au, Ti/Al/Ni/Au, etc. can be selected.
The source electrode 21, the drain electrode 22 and the semiconductor active layer 24 can be in ohmic contact by alloying, implantation doping to form heavy doping and the like.
The protective layer 30 may be SU-8 photoresist and functions to prevent the source and drain electrodes 21 and 22 from contacting the electrolyte solution 40.
The manufacturing method of the oxide semiconductor biosensor has the following different embodiments:
example one
1 preparing a semi-insulating Fe-doped beta gallium oxide single crystal substrate;
2, adopting an MBE or MOCVD homoepitaxy mode to homoepitaxially grow an unintended UID single crystal beta gallium oxide epitaxial layer with the thickness of about 200nm on a beta gallium oxide semi-insulating substrate;
3, adopting an MBE homoepitaxy mode to homoepitaxially grow a Si-doped monocrystal beta gallium oxide epitaxial layer with the doping concentration controlled at 10nm on the UID monocrystal beta gallium oxide epitaxial layer16-1018cm-3；
4, completing the patterning of the epitaxial monocrystal gallium oxide active layer by using a photoetching-etching process and an Inductively Coupled Plasma (ICP) dry etching technology;
5, performing electron beam evaporation on Ti/Au: after 30nm/100nm lamination, completing the patterning of a source electrode, a drain electrode and a gate electrode;
6, annealing the patterned source, drain and gate electrodes for 2min at 500 ℃ in a nitrogen atmosphere by using Rapid Thermal Annealing (RTA) equipment;
and 7, coating SU-8 photoresist, and manufacturing a window on the SU-8 electrode protection layer by using a photoetching process to expose the single crystal gallium oxide active layer region of the device, the contact region of the gate electrode and the electrolyte solution, and the region of the source electrode, the drain electrode and the gate electrode which are used for being connected with an external circuit.
Example two
The difference from the first embodiment is that: after a Si-doped single-crystal gallium oxide epitaxial layer is epitaxially grown on the UID single-crystal gallium oxide epitaxial layer in a homoepitaxy mode through MBE (molecular beam epitaxy), an AlGaO epitaxial layer with the thickness of about 10nm is continuously epitaxially grown on the Si-doped single-crystal gallium oxide epitaxial layer through MBE or MOCVD (metal organic chemical vapor deposition), and Ga is formed2O3An AlGaO heterostructure as an active layer in subsequent processing and device structures.
In Ga2O3In the/AlGaO heterostructure, two-dimensional electron gas exists at the interface of two materials, and excellent carrier transport performance is provided. The device structure of the embodiment is formed by introducing Ga on the basis of not influencing other performances of the device2O3the/AlGaO heterojunction active layer can effectively improve the mobility of the manufactured device.
EXAMPLE III
Unlike the first embodiment, the Fe-doped beta gallium oxide single crystal semi-insulating substrate in the first embodiment was replaced with a sapphire substrate, and then, e-Ga was epitaxially grown on the sapphire substrate by MOCVD heteroepitaxy2O3A monocrystalline epitaxial layer. Thereby epsilon-Ga2O3The single crystal epitaxial layer is used as an active layer to complete the subsequent process and the device structure manufacture. Because lattice mismatch exists between the heteroepitaxial substrate and the epitaxial layer, a two-step method can be adopted in the epitaxial process, wherein a buffer layer is firstly introduced on the sapphire substrate, and then epsilon-Ga is epitaxially grown on the buffer layer2O3Single crystal film, reduced lattice mismatch epitaxial epsilon-Ga2O3Influence of the quality of the single crystal thin film.
As shown in fig. 6 to 8, the method for using an oxide semiconductor biosensor according to the present invention comprises: the prepared oxide semiconductor biosensor is used for detecting the pH value of an electrolyte solution:
if the semiconductor active layer 24 does not need surface modification and/or biomolecule modification, 4 muL of electrolyte solution 40 with a specific pH value is added on the device, and the liquid drops cover the single crystal gallium oxide active layer and the exposed part of the gate electrode, so that the electrolyte solution serves as a gate dielectric layer to realize the electrical connection between the gate electrode and the single crystal gallium oxide active layer; and then leading the exposed parts of the source electrode and the drain electrode and the exposed parts of the gate electrode except the contact part of the gate electrode and the electrolyte solution out to be connected into an external test circuit, and carrying out test analysis by using a semiconductor parameter tester.
If the semiconductor active layer 24 is subjected to surface modification and/or biomolecule modification, adding a solution to be tested containing biological information to the gate electrode 23 and the exposed part of the semiconductor active layer 24 in the protective layer 30, incubating for a period of time, washing with deionized water, and then drying with nitrogen, wherein the biological information to be tested is fixed on the surface of the active layer; dropping an electrolyte buffer solution on the gate electrode 23 and the exposed part of the semiconductor active layer 24 in the protective layer 30, so that the electrolyte buffer solution serves as a gate dielectric layer to realize the electrical connection between the gate electrode 23 and the semiconductor active layer 24; the electrolyte buffer is phosphate buffer.
The technique of detecting a specific component using specific binding between biomolecules is an important method in the field of biosensing. For a semiconductor field effect transistor type biosensor device, the process of functionalizing the device with biomolecules having specific binding ability is called modification, and the modification methods are generally classified into two major categories, physical modification and chemical modification, in which chemical modification is favored by many researchers because of stable binding effect. According to the report of related documents, hydroxyl exists on the surface of the oxide semiconductor in a polar solution environment, which lays a foundation for the application of the EGTFT device taking the oxide semiconductor active layer as a sensitive layer in the field of biosensing. Based on the principle of chemical modification, the hydroxylated surface of the EGTFT oxide semiconductor active layer can be modified by methods such as silane coupling, so that other functional groups are bonded on the surface; furthermore, a certain biomolecule with specific binding capacity can be connected to the surface of the oxide semiconductor active layer which is subjected to modification treatment and has a specific functional group, the biomolecule to be modified is determined according to an object to be detected, and a surface modification treatment scheme is selected according to the biomolecule to be modified, so that the modification of the specific biomolecule on the surface of the oxide semiconductor active layer can be realized, and the functionalization of the sensing layer of the EGTFT biosensor device is realized.
When the EGTFT biosensor using the oxide semiconductor active layer as the sensing layer works, for an unmodified device, hydroxyl on the surface of the oxide semiconductor active layer has the capability of capturing hydrogen ions in an electrolyte solution. When an electrolyte solution containing a certain amount of hydrogen ions is in contact with the oxide semiconductor active layer and the gate electrode, respectively, at the interface between the electrolyte solution and the oxide semiconductor active layer, a chemical equilibrium of adsorption and desorption is established between the hydrogen ions in the electrolyte solution and hydroxyl groups on the surface of the oxide semiconductor active layer. The greater the hydrogen ion concentration in the electrolyte solution, the greater the number of hydrogen ions that remain in an adsorbed state after equilibrium is established; the hydrogen ions adsorbed to the surface of the oxide semiconductor active layer will change the surface potential of the surface, which is equivalent to applying an additional potential to the channel of the oxide semiconductor active layer through the gate dielectric layer. This additional potential can change the carrier distribution state in the channel, causing a change in the electrical properties of the device, from which information on the ion concentration in the electrolyte solution can be obtained. For the device modified by the biomolecules, the biomolecules similarly modified to the surface of the active layer of the oxide semiconductor can capture specific molecules in the solution of the object to be detected, directly cause or cause the change of the surface potential of the active layer of the oxide semiconductor through a specific binding reaction product, and further can characterize the components of the solution.
Gallium oxide is one of the emerging ultra-wideband gap semiconductor materials, and has a plurality of excellent characteristics, including high chemical stability, thermal stability and corrosion resistance, no toxicity, good biocompatibility and the like; in addition, gallium oxide has five different phase structures, including β, α, γ, δ, ε. The single crystal thin film may be prepared by homoepitaxy or heteroepitaxy. In recent years, researches on gallium oxide materials and related devices are increasing, and power electronic devices, solar blind ultraviolet detection devices, gas sensors and the like based on gallium oxide have been developed. However, the attention on the gallium oxide-based semiconductor field effect transistor type biosensor device is less, and the research on the related process and device characteristics of the single crystal gallium oxide-based EGTFT biosensor device is of great significance.
Various other modifications and changes may occur to those skilled in the art based on the foregoing teachings and concepts, and all such modifications and changes are intended to be included within the scope of the appended claims.
Claims (10)
1. An oxide semiconductor biosensor, characterized in that the semiconductor active layer (24) in direct contact with the electrolyte solution (40) is a single crystal semiconductor.
2. The oxide semiconductor biosensor as claimed in claim 1, wherein the semiconductor active layer (24) is single crystal Ga2O3Film or Ga2O3One of the/AlGaO heterostructures.
3. An oxide semiconductor biosensor as claimed in claim 2, comprising a single crystal substrate (10), a source electrode (21) and a drain electrode (22) being provided on the single crystal substrate (10) in relatively isolated relation; the source electrode (21) and the drain electrode (22) are oppositely extended at the front end of the single crystal substrate (10), and the position at the rear end of the single crystal substrate (10) is used as a pin to be electrically connected with an external circuit; the single crystal substrate (10) is provided with the semiconductor active layer (24) at the middle position where the source electrode (21) and the drain electrode (22) oppositely extend, one side of the semiconductor active layer (24) is inserted into the extension part of the source electrode (21) and is electrically connected with the extension part, and the other side of the semiconductor active layer is inserted into the extension part of the drain electrode (22) and is electrically connected with the extension part; the single crystal substrate (10) is provided with a gate electrode (23) which is isolated from each other between the pins of a source electrode (21) and a drain electrode (22);
a single crystal substrate (10) provided with a protective layer (30) on the upper surface thereof, the protective layer covering a source electrode (21), a drain electrode (22), and a gate electrode (23); the protective layer (30) is provided with a first window (31) for exposing the semiconductor active layer (24) at a position above the semiconductor active layer (24), and a second window (32) for exposing the gate electrode (23) at a position above the gate electrode (23); the source electrode (21), the drain electrode (22) and the gate electrode (23) extend out of the protective layer (30) at the rear end of the single crystal substrate (10).
4. A method for manufacturing an oxide semiconductor biosensor is characterized by comprising the following steps:
a step of preparing a single crystal substrate (10);
a step of epitaxially growing and patterning a semiconductor active layer (24) on the single crystal substrate (10); said semiconductor active layer (24) is a single crystal semiconductor for direct contact with an electrolyte solution (40);
a step of manufacturing and patterning a source electrode (21), a drain electrode (22) and a gate electrode (23);
a step of forming ohmic contacts between a source electrode (21) and a drain electrode (22) and the semiconductor active layer (24), respectively;
a step of manufacturing a protective layer (30); the protective layer (30) is used for preventing the source electrode (21) and/or the drain electrode (22) from being in contact with the electrolyte solution (40), and the protective layer (30) is provided with a first window (31) for exposing the semiconductor active layer (24) and a second window (32) for exposing the gate electrode (23);
an optional step of surface modification and/or biomolecular modification of the semiconductor active layer (24).
5. A method of fabricating an oxide semiconductor biosensor according to claim 4, wherein when the epitaxially growing the semiconductor active layer (24) is a homogeneous epitaxy: the single crystal substrate (10) and the semiconductor active layer (24) are both beta-Ga2O3Single crystal; the thickness of the semiconductor active layer (24) is 10-100 nm, and the doping concentration is 1016～1018cm-3。
6. A method of fabricating an oxide semiconductor biosensor according to claim 4, wherein when the epitaxially growing the semiconductor active layer (24) is heteroepitaxial: the single crystal substrate (10) is sapphire,Semi-insulating Si, semi-insulating SiC, the semiconductor active layer (24) being alpha-Ga2O3Single crystal, beta-Ga2O3Single crystal of epsilon-Ga2O3Single crystal or Ga2O3One of/AlGaO heterostructures; a buffer layer is introduced between the monocrystalline substrate (10) and the semiconductor active layer (24) to relieve lattice-matched stress.
7. The method of claim 6, wherein when the semiconductor active layer (24) is Ga2O3In a/AlGaO heterostructure, a two-dimensional electron gas is introduced into the semiconductor active layer (24) to enhance charge mobility.
8. A method for using an oxide semiconductor biosensor, characterized in that an electrolyte solution (40) to be measured is dropped on the surface of the oxide semiconductor biosensor according to claim 3, and the electrolyte solution (40) is simultaneously electrically connected with the semiconductor active layer (24) and the gate electrode (23): the parts of the source electrode (21), the drain electrode (22) and the gate electrode (23) extending out of the protective layer (30) are externally connected with a test circuit.
9. The method of claim 8, wherein if the semiconductor active layer (24) does not need surface modification and/or biomolecule modification, the electrolyte solution (40) to be tested is directly applied to the gate electrode (23) and the exposed portion of the semiconductor active layer (24) in the protective layer (30), such that the electrolyte solution (40) serves as a gate dielectric layer to electrically connect the gate electrode (23) and the semiconductor active layer (24).
10. The method of using an oxide semiconductor biosensor according to claim 8, wherein if the semiconductor active layer (24) is surface modified and/or bio-molecular modified, the solution containing the biological information to be measured is applied to the gate electrode (23) and the exposed portion of the semiconductor active layer (24) in the protective layer (30), and after a certain incubation period, the solution is rinsed with deionized water, and then dried with nitrogen gas to fix the biological information to be measured on the active layer; dropping an electrolyte buffer solution to the exposed parts of the gate electrode (23) and the semiconductor active layer (24) in the protective layer (30), so that the electrolyte buffer solution serves as a gate dielectric layer to realize the electrical connection between the gate electrode (23) and the semiconductor active layer (24); the electrolyte buffer is phosphate buffer.
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