CN114608717B - Single-point simultaneous measurement method for heat flow and temperature - Google Patents

Single-point simultaneous measurement method for heat flow and temperature Download PDF

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CN114608717B
CN114608717B CN202210276343.5A CN202210276343A CN114608717B CN 114608717 B CN114608717 B CN 114608717B CN 202210276343 A CN202210276343 A CN 202210276343A CN 114608717 B CN114608717 B CN 114608717B
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谢天
赵睿鹏
陈曦
李禛哲
钟耀
张同
陶伯万
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University of Electronic Science and Technology of China
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
    • G01K7/16—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements
    • G01K7/22—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements the element being a non-linear resistance, e.g. thermistor
    • G01K7/223—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements the element being a non-linear resistance, e.g. thermistor characterised by the shape of the resistive element
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K13/00—Thermometers specially adapted for specific purposes
    • G01K13/02—Thermometers specially adapted for specific purposes for measuring temperature of moving fluids or granular materials capable of flow
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Abstract

The invention belongs to the technical field of special thin film sensors, and particularly relates to a method for simultaneously measuring heat flow and temperature by a single point. The invention is based on the atomic layer thermopile heat flow sensor, changes the resistance value of the functional layer film of the atomic layer thermopile heat flow sensor along with the temperature change, and the atomic layer thermopile heat flow sensor is regarded as a heat resistance sensor, and the temperature of the atomic layer thermopile heat flow sensor is represented according to the measured resistance value of the functional layer film of the atomic layer thermopile heat flow sensor. The functional layer film is used as a heat flow sensitive element and a temperature sensitive element at the same time, so that the temperature and the heat flow are measured at the same point at the same time, and a heat flow characteristic curve is corrected through a temperature value, so that the heat flow measurement is more accurate. The invention eliminates the errors caused by factors such as different sensor sizes, different sensor installation positions and the like when two different sensors are used in the prior art, and the thin film sensor has small volume and more accurate actual measurement position.

Description

Single-point simultaneous measurement method for heat flow and temperature
Technical Field
The invention belongs to the technical field of thin film special sensors, and particularly relates to a method for simultaneously measuring heat flow and temperature by a single point.
Background
The heat flow and the temperature are important test parameters in the fields of fire prevention and disaster reduction, heat energy engineering, aerospace aerodynamic heat and thermal protection tests and the like. In the field of aerospace aerodynamic heat and thermal protection tests, researchers use high-speed wind tunnel experiments to study the heating condition of a measured object (such as an aircraft). In a high-speed wind tunnel experiment, a measured object needs to be heated and tested in an extremely high-temperature and extremely high-heat-flow environment, and the temperature and the heat flow of the key part of the measured object are monitored.
The atomic layer thermopile heat flow sensor is a novel film type sensor for transient heat flow measurement prepared based on the transverse Seebeck effect. The sensor takes a perovskite type functional layer film with a high texture epitaxially grown on an obliquely oriented single crystal substrate as a sensitive element, when heat flow exists to enable the upper surface and the lower surface of the functional layer film of the atomic layer heat flow sensor to generate temperature gradients, a transverse (parallel to the surface direction of the film) thermoelectric force can be obtained, and the magnitude of the thermoelectric force is in linear direct proportion to the magnitude of the measured heat flow.
When the atomic layer thermopile heat flow sensor is used for measuring heat flow, physical properties of a sensitive element such as electrical conductivity, thermal conductivity and Seebeck coefficient can be influenced by temperature, so that the sensitivity of the atomic layer thermopile heat flow sensor is different at different temperatures, the working temperature of the atomic layer thermopile heat flow sensor is often required to be measured at the moment, and the accurate sensitivity of the atomic layer thermopile heat flow sensor at the moment can be obtained, but most of temperature sensors are difficult to accurately measure the accurate temperature (influenced by the size and the structure of the temperature sensor) of the sensitive element when the atomic layer thermopile heat flow sensor works.
In order to measure the temperature of the atomic layer thermopile heat flow sensor, roediger et al, university of stuttgart, germany, chose a way of mounting a thermocouple on the back of the sensor, but the thermocouple and the sensing element are separated by a layer of substrate by adopting the mounting way, and the response speed of the thermocouple is slow, so the temperature measured by the thermocouple cannot accurately reflect the temperature of the sensing element of the atomic layer thermopile heat flow sensor in real time.
Disclosure of Invention
In view of the above problems or disadvantages, an object of the present invention is to provide a method for simultaneously measuring a single point of heat flow and temperature, which avoids the deviation caused by the difference between the measured temperature and the actual temperature of a sensing element due to the fact that the measurement position of an introduced thermocouple (other temperature sensor) cannot be infinitely close to the sensing element of the atomic layer thermopile heat flow sensor when the temperature of the sensing element of the atomic layer thermopile is measured.
A method for simultaneously measuring heat flow and temperature by single points specifically comprises the following steps:
step 1, fixing an atomic layer thermopile heat flow sensor on the surface of a measured object, and enabling the functional layer film surface of the atomic layer thermopile heat flow sensor to be positioned below the heat flow to be measured;
electrodes at two ends of the atomic layer thermopile heat flow sensor are connected to the function signal generator through an external lead, and square wave current signals are output to the function signal generator through the function signal generator.
The two electrode ends of the atomic layer thermopile heat flow sensor are also connected with a voltmeter in parallel through an external lead and the function signal generator, and the voltmeter is used for measuring signals at the two ends of the atomic layer thermopile heat flow sensor and sending data to the computer.
And the computer is in real-time communication with the voltmeter, so that real-time data of the heat flow and the temperature at the same point are obtained, and the heat flow and the temperature data of the same measuring point changing along with time are obtained after the real-time data are processed.
The atomic layer thermopile heat flow sensor comprises an obliquely oriented single crystal substrate, a perovskite type functional layer film (such as yttrium barium copper oxide and lanthanum calcium manganese oxide) which is epitaxially grown on the single crystal substrate and has a high texture, and a film electrode.
Step 2, turning on a function signal generator to apply square wave current signals, starting measurement, and obtaining two types of readings U of a voltmeter in the same period of the square wave current signals 1 And U 2 (ii) a Let the heat flow density through the functional layer film be q, the resistance of the functional layer film be R, R (T) being a function of the functional layer film (the sensitive element of the sensor) with respect to the temperature T.
In the same period, the square wave current signal can be regarded as being composed of two sections of direct current signals with the same magnitude and opposite directions, and the direct current in the previous section is I 1 After the current direction is deflected, the current direction is I 2 ，|I 1 |＝|I 2 |＝I。
At a DC current of I 1 During the period of time (2), the indication number of the voltmeter is marked as U 1 At this time U 1 Is the superposition of two parts of voltage signals: a part is direct current I 1 Voltage I generated by resistance of functional layer after passing through the film 1 R (T), the other part is transverse thermoelectric potential U generated on the surface of the functional layer film after heat flow passes through the functional layer film p1 Let this time the potential difference I 1 R (T) and thermoelectric potential U p1 Same direction, U 1 Can be expressed as:
U 1 ＝U p1 +IR(T) (1)
after the direction of the direct current is changed, the direct current is changed into I 2 During this time, the number of voltage representations is denoted as U 2 At this time U 2 Is the superposition of two parts of voltage signals: the first part is the voltage I generated by the resistance of the functional layer film after the current passes through it 2 R (T), the second part is transverse thermoelectric force U generated on the surface of the functional layer film after heat flow passes through the functional layer film p2 Transverse thermoelectric potential U due to the same heat flow p1 ＝U p2 ＝U p At this time, the potential difference I 2 R (T) and thermoelectric potential U p2 In the opposite direction, U 2 Can be expressed as:
U 2 ＝U p2 -IR(T) (2)
step 3, for the U obtained in the step 2 1 And U 2 The values of (a) and (b) can be obtained from the formulae (1) to (2):
U 1 -U 2 ＝2R(T)×I (3)
Figure BDA0003555884480000031
the resistance R (T) of the functional layer film (sensitive element) of the atomic layer thermopile heat flow sensor at the current moment can be obtained.
Then, the compound can be obtained by the following formula (1) + (2):
U 1 +U 2 ＝U p1 +U p2 ＝2U p (5)
Figure BDA0003555884480000032
the magnitude of the thermoelectric force Up output by the atomic layer thermopile heat flow sensor at the current moment can be obtained, as shown in fig. 3.
Step 4, substituting the R (T) calculated in the step 3 into a relation curve of the temperature T-resistance R (T) of a functional layer film of the atomic layer thermopile heat flow sensor to obtain the temperature T at the moment; the thermoelectric potential Up is brought into the temperature T of the functional layer film of the atomic layer thermopile heat flow sensor-the transverse thermoelectric potential U P The magnitude of the heat flow q can be obtained from the heat flow q relation curve. The required temperature and heat flow magnitude have been measured up to this point.
Further, the temperature T used in the step 4 is a relation curve of resistance R (T), temperature T is a transverse thermoelectric potential U P The heat flow q relation conversion curve is separately obtained when the atomic layer thermopile heat flow sensor is not placed on the surface of the object to be detected, so that the obtaining difficulty is reduced and the operation is convenient.
Further, the voltage signal U collected in the step 2 1 And U 2 Respectively for collecting a plurality of U 1 Average value of voltage signal, U 2 The average value taken of the voltage signal. In order to reduce the error caused by the resistance R of the functional layer film in the actual operation due to the extremely high temperature and extremely high heat flow environment, the function R (T, T) of the temperature T and the time T.
Further, the error caused by the time t is reduced by increasing the frequency of the square wave signal generated by the functional signal generator (reducing the sampling period).
Furthermore, the atomic layer thermopile heat flow sensor is made of high-temperature resistant materials so as to improve the upper limit of the measured temperature; and the functional layer film is made of perovskite structure, has anisotropic Seebeck coefficient, can generate transverse Seebeck effect, and grows epitaxially on the obliquely oriented single crystal substrate. The upper temperature limit measured in practical applications depends on the upper heat resistance limit of the functional layer film material, such as lanthanum calcium manganese oxygen.
Furthermore, an electrode of the atomic layer thermopile heat flow sensor is a thin film electrode.
The invention is based on the atomic layer thermopile heat flow sensor, changes the resistance value of the functional layer film of the atomic layer thermopile heat flow sensor along with the temperature change, and the atomic layer thermopile heat flow sensor is regarded as a heat resistance sensor, and the temperature of the atomic layer thermopile heat flow sensor can be represented according to the measured resistance value of the functional layer film of the atomic layer thermopile heat flow sensor. The functional layer film is used as a heat flow sensitive element and a temperature sensitive element at the same time, so that the temperature and the heat flow are measured at the same point at the same time, and the heat flow characteristic curve is corrected through the temperature value, so that the heat flow measurement is more accurate.
In conclusion, the invention realizes the simultaneous measurement of the temperature and the heat flow of two pneumatic thermal parameters of the same point of an object to be measured, the functional layer film of the atomic layer thermopile heat flow sensor is simultaneously used as the sensitive element of the heat flow sensor and the sensitive element of the temperature sensor, the errors caused by the factors of different sensor sizes, different sensor installation positions and the like when two different sensors are used in the prior art are eliminated, and the film sensor has small volume and more accurate actual measurement position.
Drawings
FIG. 1 is a structural orientation relationship diagram of a single crystal substrate and a functional layer film in an example.
FIG. 2 is a schematic diagram of a measurement system architecture in which the present invention is implemented.
FIG. 3 is a schematic diagram of the calculation of step 3 of the present invention.
FIG. 4 is a graph showing the temperature T vs. resistance R (T) of the functional layer film in the example.
FIG. 5 shows the transverse thermoelectric voltage U of the functional layer film at different ambient temperatures according to the example P -heat flow q-relation conversion curve.
FIG. 6 is a waveform diagram of an embodiment.
FIG. 7 is a flow chart of the present invention.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings and examples.
In this example, a single crystal LaAlO in an inclined orientation was used 3 Yttrium barium copper oxide film with high texture is epitaxially grown on the substrate to be used as functional layer film of the atomic layer thermopile heat flow sensor, and the specific measurement process is shown in fig. 7.
The Keithley 2400SourceMeter used in this example is a current source meter, which can be used as both a signal generator and a voltmeter. The circuit and the atomic layer thermopile heat flow sensor (as shown in fig. 2) are connected in the above manner, and the atomic layer thermopile heat flow sensor is placed on the surface of the object to be measured.
Before starting the measurement, the relationship curve of the temperature T of the YBCO functional film used in this example to the resistance R (T) (as shown in FIG. 4) and the heat flow q of different ambient temperatures to the transverse thermoelectric potential U were measured P The relationship curve (as shown in fig. 5). When the measurement is started, the base band is electrified and preheated to generate heat flow with constant size, so that the yttrium barium copper oxide functional layer film is under constant heat flow.
Then, a computer-controlled Keithley 2400Sourcemeter was used to generate a square wave signal with an amplitude of 1 μ A, and the Keithley 2400Sourcemeter was controlled to perform data acquisition.
Taking a waveform diagram of voltages across an yttrium barium copper oxide functional layer film collected by a Keithley 2400source meter (as shown in fig. 6) as an example, values of U1 and U2 are substituted into the above equations (4) and (6), and UP =0.071mV and R (T) =1250.87 Ω can be obtained.
Then, the temperature T is 300K by comparing the temperature T of the functional layer film with the resistance R (T) relation curve (shown in figure 4), and the heat flow q at the corresponding temperature T is found and the magnitude of the heat flow q is 0.43W/cm < 2 > -by finding the transverse thermoelectric force UP relation curve (shown in figure 5).
It should be noted that the upper limit of the temperature measured in the practical application of the method depends on the upper limit of the heat resistance of the functional layer film material, in this example, yttrium barium copper oxide is used as the functional layer film, and since yttrium barium copper oxide is easily decomposed at high temperature, a high-temperature resistant material with transverse seebeck effect (such as lanthanum calcium manganese oxide) should be selected as the functional layer film when measuring at high temperature.
As can be seen by the above examples: the method is simple and easy to implement, simultaneously meets the measurement of two large aerodynamic thermal parameters of heat flow and temperature of a high-speed measured object, and avoids errors caused by the fact that the measured temperature of the temperature sensor is different from the actual temperature of the sensitive element due to the fact that the measuring positions of other introduced temperature sensors cannot be infinitely close to the sensitive element of the atomic layer thermopile heat flow sensor when the temperature of the sensitive element of the atomic layer thermopile heat flow sensor is measured.

Claims (7)

1. A single-point simultaneous measurement method of heat flow and temperature is characterized by comprising the following steps:
step 1, fixing an atomic layer thermopile heat flow sensor on the surface of a measured object, and enabling the functional layer film surface of the atomic layer thermopile heat flow sensor to be positioned below the heat flow to be measured; the atomic layer thermopile heat flow sensor comprises a single crystal substrate, a functional layer film and an electrode;
two electrode ends of the atomic layer thermopile heat flow sensor are connected to the function signal generator through an external lead, and a square wave current signal is output to the function signal generator;
the two electrode ends of the atomic layer thermopile heat flow sensor are also connected with a voltmeter in parallel through an external lead and a function signal generator, and the voltmeter is used for measuring signals at the two ends of the atomic layer thermopile heat flow sensor and sending data to a computer;
the computer is communicated with the voltmeter in real time, so that real-time data of heat flow and temperature at the same point are obtained, and the heat flow and temperature data of the same measuring point changing along with time are obtained after the real-time data are processed;
step 2, turning on a function signal generator to apply square wave current signals, starting measurement and obtaining square wave electricityTwo kinds of indication U of voltage signal of voltmeter in same period of stream signal 1 And U 2 ；
Recording the heat flux density passing through the functional layer film as q, recording the resistance of the functional layer film as R, wherein R (T) is a function of the functional layer film relative to the temperature T;
in the same period, the square wave current signal is regarded as being composed of two sections of direct current signals with the same magnitude and opposite directions, and the direct current in the previous section is I 1 After the current direction is deflected, the current direction is I 2 ，|I 1 |＝|I 2 |＝I；
At a DC current of I 1 During the period of time (2), the indication number of the voltmeter is marked as U 1 At this time U 1 Is the superposition of two parts of voltage signals: a part being direct current I 1 Voltage I generated by the resistance of the functional layer film after passing through it 1 R (T), the other part is transverse thermoelectric potential U generated on the surface of the functional layer film after heat flow passes through the functional layer film p1 Let us say the potential difference I at this time 1 R (T) and thermoelectric potential U p1 Same direction, U 1 Expressed as:
U 1 ＝U p1 +IR(T) (1)
after the direction of the direct current is changed, the direct current is changed into I 2 During this time, the number of voltage representations is denoted as U 2 At this time U 2 Is the superposition of two parts of voltage signals: the first part is the voltage I generated by the resistance of the functional layer film after the current passes through it 2 R (T), the second part is transverse thermoelectric force U generated on the surface of the functional layer film after heat flow passes through the functional layer film p2 Transverse thermoelectric force U due to the same heat flow p1 ＝U p2 ＝U p At this time, the potential difference I 2 R (T) and thermoelectric potential U p2 In the opposite direction, U 2 Can be expressed as:
U 2 ＝U p2 -IR(T) (2)
step 3, for the U obtained in step 2 1 And U 2 The values of (a) and (b) can be obtained from the formulae (1) to (2):
U 1 -U 2 ＝2R(T)×I (3)
Figure FDA0003555884470000021
the size of a functional layer film resistor R (T) of the atomic layer thermopile heat flow sensor at the current moment can be obtained;
then, the compound can be obtained by the following formula (1) + (2):
U 1 +U 2 ＝U p1 +U p2 ＝2U p (5)
Figure FDA0003555884470000022
the magnitude of the thermoelectrical potential Up output by the atomic layer thermopile heat flow sensor at the current moment can be obtained;
step 4, calculating the following steps obtained in the step 3: the temperature T of the atomic layer thermopile heat flow sensor functional layer film brought by the R (T) -the resistance R (T) relation curve is obtained to obtain the corresponding temperature T at the moment, and the temperature T of the atomic layer thermopile heat flow sensor functional layer film brought by the thermoelectrical potential Up-the transverse thermoelectrical potential U P -obtaining the magnitude of the heat flow q from the heat flow q relation curve; so far, the temperature and the heat flow of the measured object are measured.
2. The method of claim 1 for the simultaneous single point measurement of heat flow and temperature, wherein: the temperature T-resistance R (T) relation curve and the temperature T-transverse thermoelectric potential U of the functional layer film of the atomic layer thermopile heat flow sensor P And the heat flow q relation conversion curve is separately obtained when the atomic layer thermopile heat flow sensor is not placed on the surface of the object to be detected.
3. The method of claim 1 for the simultaneous single point measurement of heat flow and temperature, wherein: the voltage signal U acquired in the step 2 1 And U 2 Respectively for collecting a plurality of U 1 Average value of voltage signal, U 2 The average value taken of the voltage signal.
4. The method of claim 1 for the simultaneous single point measurement of heat flow and temperature, wherein: the function signal generator selects high frequency to reduce sampling period, so as to reduce error brought by time t.
5. The method of claim 1 for the simultaneous single point measurement of heat flow and temperature, wherein: the atomic layer thermopile heat flow sensor is made of high-temperature resistant materials; and the functional layer film is made of perovskite structure, has anisotropic Seebeck coefficient, can generate transverse Seebeck effect, and grows epitaxially on the obliquely oriented single crystal substrate.
6. The method of claim 5 for single point simultaneous measurement of heat flow and temperature, comprising: the functional layer film adopts a high-temperature resistant material lanthanum calcium manganese oxygen.
7. The method of claim 1 for the simultaneous single point measurement of heat flow and temperature, wherein: the electrode of the atomic layer thermopile heat flow sensor is a thin film electrode.
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